JPS63240040A - Manufacture of sample wafer - Google Patents

Abstract

PURPOSE:To contrive to be able to obtain a group of protrusions of artificially adhered dust of a desired size, a desired number of pieces and in a uniform distribution state, by a method wherein, after a thin film consisting of an artificially adhered dust material and a resist film are laminatedly formed and patterned, the thin film is etched to form the group of protrusions. CONSTITUTION:Such a thin film 11 is an oxide film consisting of SiO2 and so on or a nitride film consisting of Si3N4 and so on is formed by coating on a wafer 10 by deposition and sputtering and a resist film 12 is formed on the film 11 to arrange and pattern a mask 13 having a fine tile-shaped pattern. After that, the desired sites of the film 11, which correspond to window opening sites 14, 14... of the film 12, are peeled and removed be an etching treatment and the remained resist film 12 is removed with an organic solvent and so on to form a group 15 of protrusions, which consist of the film 11, of a desired size, a desired number of pieces and in a uniform distribution state on the wafer 10. Thereby, sample waters 17 that the protrusions 16, 16... of the groups 15 of protrusions on the wafer 10 correspond to artificially adhered dust can be obtained.

Description

[Detailed Description of the Invention] The present invention relates to a method for manufacturing a sample wafer, and more specifically, to a method for manufacturing a sample wafer, and more specifically, to a method for manufacturing a sample wafer, and more specifically, a method for manufacturing a sample wafer, and more specifically, a method for manufacturing a sample wafer. The present invention relates to a wafer manufacturing method.

BACKGROUND OF THE INVENTION Various semiconductor devices are generally manufactured by forming a large number of semiconductor elements all at once on a semiconductor wafer made of single-crystal silicon, and then going through various steps. In the manufacture of such semiconductor devices, the adhesion of dust on the semiconductor wafer is undesirable as it causes various problems, and it is necessary to periodically inspect the semiconductor wafer for dust.

The dust inspection apparatus used in the manufacture of the semiconductor devices described above generally employs a scattered light detection method. This dust inspection device using the scattered light detection method irradiates the semiconductor wafer to be inspected with light of a certain wavelength, such as laser light, and detects the scattered light generated by the dust on the semiconductor wafer by the irradiation of the laser light. The presence or absence of dust on the semiconductor wafer and its state are detected based on the scattering state of the dust. By the way, in this type of dust inspection equipment, initial conditions are set to obtain a predetermined detection signal depending on the state of dust on the semiconductor wafer, or inspection sensitivity is kept constant by preventing deterioration of the optical system equipment over time. It is necessary to periodically update it to maintain it.

Therefore, in the above-mentioned dust inspection apparatus, a sample wafer, which is a standard for dust inspection, is used for setting and correcting initial conditions. This sample wafer is a wafer on which no semiconductor elements are formed, but whose surface has been polished to a mirror finish, with simulated dust attached to it, which is the standard for dust inspection. This will be explained with reference to FIGS. 6 to 8. First, as shown in Figure 6, a single crystal silicon wafer (1) on which no semiconductor elements are formed.
Prepare. As shown in Figure 7, standard particles (2) of uniform particle size made of an organic material such as polyvinyltoluene
(2)... in an organic solvent such as isopropyl alcohol (
The coating liquid (4) mixed in a certain amount with the wafer (1) is applied to the wafer (1).
) with an airbrush (5). As a result, the 8th
As shown in the figure, standard particles (2) (2) become pseudo-dust.
)... is deposited on the wafer (1) to obtain a sample wafer (6).

By the way, the conditions required for the above-mentioned sample wafer (6) in dust inspection in the manufacture of semiconductor devices include standard particles (2) (2) attached to the wafer (1).・
The number of the standard particles (2) can be easily controlled.
)(2)... should be uniformly distributed, and foreign matter other than the standard particles (2)(2)... should not be attached.

However, in the conventional manufacturing method of the sample wafer (6) described above, the coating liquid (4) is sprayed onto the wafer (1) by the airbrush (5) at a certain time, and the coating liquid (4) is sprayed at a distance, angle, or
Spray amount and standard particles (2) that compose the coating liquid (4)
The number and distribution state of standard particles (2) (2)... on the wafer (1) vary depending on the mixing ratio of (2) -... and the organic solvent (3), resulting in low reproducibility. In addition, spraying with an airbrush (5) sometimes involves foreign matter from the surroundings, and this foreign matter may adhere to the wafer (1), making it difficult to satisfy the conditions required for the sample wafer (6) described above. That wasn't the point.

In addition, the standard particles (2) (2)... are not necessarily attached to the entire surface of the wafer (1), but depending on the application, the standard particles (2) (2)... may be attached to only a part of the wafer (1), for example, only one half of the wafer (1). 2)
(2) You may want to make sample wa 1-ha (6) by attaching..., but in this case, airbrush (5)
Sample wafer (6) is sprayed with coating liquid (4) by
The conventional method of producing fins also had the problem of extremely difficult fins.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing sample wafers using simple means that easily satisfies the conditions required for sample wafers.

The present invention has been proposed in view of the above-mentioned problems, and involves forming a thin film of a pseudo-attached dust material and a resist film 1aWI on a wafer whose surface has been mirror-polished, and removing this resist film by masking. This is a method of manufacturing a sample wafer which attempts to achieve the above object by etching the thin film after patterning to form a group of protrusions of a desired size, number and distribution.

According to the method of the present invention, a group of protrusions formed on a wafer using patterning using photolithography technology in semiconductor device manufacturing becomes pseudo-dust with a desired set size, and the size of each protrusion in this group of protrusions is The number of protrusions can be easily controlled, and the distribution state of each of the protrusions can be arbitrarily set.

An embodiment of the method for manufacturing a sample wafer according to the present invention will be explained with reference to FIGS. 1 to 5.The feature of the method of the present invention is that patterning by photolithography technology is used in the manufacture of semiconductor devices. There is a particular thing.

First, as shown in Figure 1, a thin ffl film (1) such as an oxide film such as 8102 or a nitride film such as Si3N4 is coated on a mirror-polished wafer (10) made of single crystal silicon on which no semiconductor elements are formed. is deposited by vapor deposition or sputtering. Next, as shown in FIG. 2, a photosensitive resist material is applied onto the thin film (II) to form a resist film (12) and patterned. The patterning of this resist film (12) is performed as shown in FIG.
A mask (13) having a desired, for example, micro tile-like pattern is placed above the mask (12), and ultraviolet rays are irradiated in this state. ] The above resist+- film (12) is masked (
] 3), and then resist 1-
This is done by developing the film (12) and peeling off desired areas that are unexposed or exposed. Thereafter, as shown in Fig. 4, the window light of the resist film (12) was peeled off and removed by etching the desired part of the thin film (1) corresponding to the part (14) <14)... and the remaining part was removed. The resist film (12) is removed using an organic solvent, etc., and the fifth
The above patterned as shown in the figure! A group of protrusions (15) having a desired size, number and distribution are formed on the wafer (10). In this way, each protrusion (16) of protrusion # (15) on the wafer (10)
) (16)... is obtained as a sample wafer (17) corresponding to pseudo-attached dust.

According to the method of the present invention, the size and number of each protrusion in a group of protrusions formed on a wafer by patterning using a mask can be easily controlled, and the distribution state of each of the protrusions can be arbitrarily set. As a result, it is possible to obtain protrusions of the desired size, number, and uniform distribution, which are pseudo-attached dust, and to suppress as much as possible the inclusion of foreign matter during manufacturing. The conditions required for wafers can be easily met by simple means. Furthermore, it is possible to easily set the formation region of the protrusion group on the entire surface or half of the wafer, which can be sufficiently adapted to the use of the sample wafer. As described above, by using the sample wafer according to the method of the present invention, proper dust inspection can be achieved.

[Brief explanation of the drawing]

FIGS. 1 to 5 are cross-sectional views of each wafer showing each step for explaining an embodiment of the method for manufacturing a sample wafer according to the present invention. FIGS. 6 to 8 are wafer cross-sectional views showing each process for explaining a conventional method for manufacturing a sample wafer. (10)--Wafer, (1))-Thin film, (12)...Resist film, (15)--
Group of protrusions, (171--Sample wafer. Patent applicant: Kansai NEC Corporation 1' Figure 1, Figure 2z, Figure 3, Figure 4)

Claims (1)

[Claims] (1) After forming a thin film of pseudo-attached dust material and a resist film on a wafer, patterning this resist film by masking, etching the thin film to obtain a group of protrusions of desired size, number, and distribution state. A method for manufacturing a sample wafer, the method comprising: forming a sample wafer;