JPS63233551A - Integrated circuit package and manufacture thereof - Google Patents
Integrated circuit package and manufacture thereofInfo
- Publication number
- JPS63233551A JPS63233551A JP6864287A JP6864287A JPS63233551A JP S63233551 A JPS63233551 A JP S63233551A JP 6864287 A JP6864287 A JP 6864287A JP 6864287 A JP6864287 A JP 6864287A JP S63233551 A JPS63233551 A JP S63233551A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- integrated circuit
- container
- recess
- core material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000011162 core material Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 238000005253 cladding Methods 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000005394 sealing glass Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002655 kraft paper Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体チップを搭載するための集積回路容器
およびその製造方法に関する。さらに詳しくは、金属材
料を芯材とし、周面を金属酸化物で被覆した集積回路容
器、ならびにその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an integrated circuit container for mounting a semiconductor chip and a method for manufacturing the same. More specifically, the present invention relates to an integrated circuit container having a core made of a metal material and a peripheral surface coated with a metal oxide, and a method for manufacturing the same.
（従来の技術）
セラミックス製集積回路容器では、半導体チップは、板
状の矩形状のセラミックス板の中央部に設けられた凹部
にガラス又は貴金属層を介して搭載される。リードフレ
ームは該凹部を取り囲む周面部上に付着ガラスを介して
搭載され、上記半導体チップとＡｕ、ＡＱ等の金属細線
を用いて接続される。容器と同様に凹部と該凹部を取り
囲む周面部を有する容器蓋を、容器の凹部、周面部と対
向せしめて封着し、リードフレームのリードは容器と容
器蓋との間から取り出される。この容器及び容器蓋はセ
ラミックスの焼結体である。なお、本明細書中において
は容器と容器蓋の両方を含めて容器と称する。(Prior Art) In a ceramic integrated circuit container, a semiconductor chip is mounted in a recess provided in the center of a rectangular ceramic plate with a glass or noble metal layer interposed therebetween. The lead frame is mounted on the peripheral surface surrounding the recessed portion via adhesive glass, and is connected to the semiconductor chip using thin metal wires such as Au or AQ. A container lid having a recess and a peripheral surface surrounding the recess, like the container, is sealed facing the recess and the peripheral surface of the container, and the leads of the lead frame are taken out from between the container and the container lid. The container and the container lid are made of sintered ceramics. Note that in this specification, both the container and the container lid are referred to as a container.
ところでセラミックス製容器には次の欠点がある。However, ceramic containers have the following drawbacks.
■衝撃に弱いため、搬送工程中にお互いに衝突して欠け
を生ずる危険が大きい、焼結が不完全な場合には熱衝撃
によってクランクが発生することもある。■They are weak against shock, so there is a high risk of them colliding with each other during the transportation process and causing chips.If sintering is incomplete, thermal shock may cause cracks.
■熱放散性が不十分であるため、半導体チップの集積度
が高く発熱が大きい場合には誤動作が生じ易くなる。■Due to insufficient heat dissipation, malfunctions are likely to occur if the semiconductor chip has a high degree of integration and generates a large amount of heat.
■焼成時の収縮が大きく、寸法精度が劣る。■Significant shrinkage during firing and poor dimensional accuracy.
■冷却過程で反りが発生し易く、平坦度に問題がある。■ Warpage tends to occur during the cooling process, causing problems with flatness.
これらの欠点を解消するため、本出願人は、既に実願昭
６０−１４６５２７号において、金属を用いた容器を提
案した。In order to eliminate these drawbacks, the present applicant has already proposed a container using metal in Utility Application No. 146527/1983.
容器を金属で構成する場合にはこれらを電気絶縁層で覆
う必要がある。従って、上記出願で提案した金属を用い
た容器の製造においては、容器にいちいち電気絶縁層を
形成する必要がある。電気絶縁層としては金属酸化物が
適当であり、蒸着あるいはメッキによって容器に金属酸
化物となす金属皮膜を形成した後、電気化学的に酸化処
理を行う。このように上記出願で提案した金属を主体と
する容器には、大量生産の際に膨大な工数がかかるとい
う問題がある。If the container is made of metal, it is necessary to cover these with an electrically insulating layer. Therefore, in manufacturing a container using the metal proposed in the above application, it is necessary to form an electrically insulating layer on each container. A metal oxide is suitable for the electrical insulating layer, and after a metal film of metal oxide is formed on the container by vapor deposition or plating, it is electrochemically oxidized. As described above, the container mainly made of metal proposed in the above-mentioned application has the problem that it requires a huge number of man-hours when mass-producing it.
（発明が解決しようとする問題点）
従って本発明の目的は、製造に膨大な工数を必要としな
い金属酸化物で被覆された金属製集積回路容器を提供す
る事である。また製法にかかる本発明は、金属酸化物で
被覆された金属製集積回路容器を、効率的に製造する方
法を提供することを目的とする。(Problems to be Solved by the Invention) Accordingly, it is an object of the present invention to provide a metal integrated circuit container coated with a metal oxide that does not require a large number of man-hours to manufacture. Another object of the present invention, which relates to a manufacturing method, is to provide a method for efficiently manufacturing a metal integrated circuit container coated with a metal oxide.
（問題点を解決するための手段）
かくして集積回路容器にかかる本発明の要旨とするとこ
ろは、半導体チップを収納するための凹部と該凹部を囲
む周囲部を有する集積回路容器において、板状の金属芯
材と、該金属芯材を被覆する他の金属を表面から酸化す
ることにより形成された金属酸化物層とを備えることを
特徴とする集積回路容器である。(Means for Solving the Problems) Thus, the gist of the present invention relating to an integrated circuit container is that, in an integrated circuit container having a recess for accommodating a semiconductor chip and a peripheral portion surrounding the recess, a plate-shaped An integrated circuit container comprising a metal core material and a metal oxide layer formed by oxidizing another metal covering the metal core material from the surface.
また集積回路容器の製法にかかる本発明の要旨とすると
ころは、半導体チップを収納するための凹部と該凹部を
囲む周面部を有する集積回路容器の製造方法において、
酸化物を形成する金属で被覆された金属芯材からなる狭
幅板状の材料を所定の長さに切断する工程と、凹部を形
成する工程と、芯材を覆う金属を表面から酸化する工程
とを備えることを特徴とする集積回路容器の製造方法で
ある。Further, the gist of the present invention relating to a method for manufacturing an integrated circuit container is that, in a method for manufacturing an integrated circuit container having a recess for accommodating a semiconductor chip and a peripheral surface surrounding the recess,
A process of cutting a narrow plate-shaped material made of a metal core coated with an oxide-forming metal into a predetermined length, a process of forming a recess, and a process of oxidizing the metal covering the core from the surface. A method for manufacturing an integrated circuit container, comprising:
（実施例）
次に添付図面を参照しながら本発明の集積回路容器およ
びぞ＠製造方法の実施例について詳しく説明する。(Embodiments) Next, embodiments of the integrated circuit container and manufacturing method of the present invention will be described in detail with reference to the accompanying drawings.
第１図は本発明に従う集積回路容器の製造工程の一部を
示す、（本発明でいう容器とは前記した如く容器、蓋の
両方を意味するもので、容器蓋の製造も同様の工程に従
って行われる。）クー７ド の−龜
円形断面の棒状クラフト材ｌを圧延することにより狭幅
板状クラッド材２を得る０円形棒状クラッド材１は、例
えばリードフレームと同一の金属よりなる芯材１ａを、
酸化物を形成する金属層！ｂで被覆したものである。金
属層１ｂとしてはコスト面からアルミニウムを用いるこ
とが好ましい。FIG. 1 shows a part of the manufacturing process of an integrated circuit container according to the present invention. ) A narrow plate-shaped cladding material 2 is obtained by rolling a rod-shaped kraft material l with a circular cross section.The circular rod-shaped cladding material 1 is a core material made of the same metal as the lead frame, for example. 1a,
A metal layer that forms an oxide! It is coated with b. It is preferable to use aluminum as the metal layer 1b from the viewpoint of cost.
第２図は、圧延により得られた狭幅板状クラッド材２の
断面を示す、ここで、幅すは集積回路容器の幅と同一に
する。FIG. 2 shows a cross section of a narrow plate-shaped cladding material 2 obtained by rolling, where the width is the same as the width of the integrated circuit container.
容器は、リードフレームとの間で熱応力を発生させない
ため全体としての線膨張係数が搭載されるリードフレー
ムの線膨張係数と実質的に等しくする必要がある。また
、封着ガラスの線膨張係数とも実質的に等しくする必要
がある。被覆金属層２ｂは、後工程の酸化処理により電
気絶縁性を付与するのが目的であり、前述のとおりコス
ト的にみてアルミニウムが適している。金属層２ｂの厚
さｔｓは酸化処理後の絶縁性能から決められるが、経験
的に５〜３０μｌで十分である。芯材２ａの仮ＦＪｔｃ
は容器に要求される剛性ならびに後述するキャビティ部
の加工の点から決められるが、経験的に０．３〜０．６
ｍｍで十分である。このようにｔｓはｔｃよりもはるか
に小さいため、全体の線膨張係数は実質的に芯材２ａの
線膨張係数と同等とみなすことができる。よって芯材２
ａはリードフレームと同一材質でよいのである。In order to avoid generating thermal stress between the container and the lead frame, the overall linear expansion coefficient of the container needs to be substantially equal to that of the lead frame on which it is mounted. It is also necessary to make the coefficient of linear expansion substantially equal to that of the sealing glass. The purpose of the covering metal layer 2b is to provide electrical insulation through oxidation treatment in a subsequent step, and as described above, aluminum is suitable from a cost standpoint. The thickness ts of the metal layer 2b is determined based on the insulation performance after oxidation treatment, but empirically, 5 to 30 μl is sufficient. Temporary FJtc of core material 2a
is determined from the viewpoint of the rigidity required for the container and the processing of the cavity section, which will be described later, but empirically it is 0.3 to 0.6.
mm is sufficient. Since ts is thus much smaller than tc, the overall coefficient of linear expansion can be considered to be substantially equivalent to the coefficient of linear expansion of the core material 2a. Therefore, core material 2
A may be made of the same material as the lead frame.
狭幅板状クラッド材２の素材および寸法の具体例を挙げ
れば次のとおりである。Specific examples of the material and dimensions of the narrow plate-like clad material 2 are as follows.
芯材２ａを４２％Ｎｉ−Ｆｅ合金とし、被覆金属層２ｂ
を、厚さｔｓが０．０２ｍｍのアルミニウムとする０寸
法は、幅すを１４．７ｎ＋ｍ、全Ｗ、（ｔｃ＋２ｔｓ）
を０．４ａｎとする。The core material 2a is made of 42% Ni-Fe alloy, and the coating metal layer 2b
The zero dimension is 14.7n+m, total W, (tc+2ts), where is made of aluminum with a thickness ts of 0.02mm.
is set to 0.4an.
なお狭幅板状クラッド材２は、上述のようにクランド棒
材の圧延による外、狭Ｉ！板状の芯材２ａに蒸着または
メッキにより被覆金属層２ｂを形成する方法で製造して
も良い。The narrow plate-shaped cladding material 2 is formed by rolling the crund bar material as described above. It may be manufactured by forming the covering metal layer 2b on the plate-shaped core material 2a by vapor deposition or plating.
および のノ
次に狭幅板状クラッド材を切断して主表面中央に半導体
チップを収納する凹部を形成する。After and, the narrow plate-shaped cladding material is cut to form a recess in the center of the main surface to accommodate the semiconductor chip.
まず狭幅板状クラッド材を容器の長さｌに切断して矩形
板状のクラッドブランク３を得る（第３図参照）、切断
された長方形板の短辺側３ｃには芯材３ａが露出するが
、リードフレームは金属酸化物となす金属で被覆された
長辺側３ｄのみから取り出されるので問題はない。First, a narrow plate-shaped cladding material is cut into a container length l to obtain a rectangular plate-shaped cladding blank 3 (see Figure 3).The core material 3a is exposed on the short side 3c of the cut rectangular plate. However, there is no problem because the lead frame is taken out only from the long side 3d coated with metal made of metal oxide.
次にブランク３の主面中央部に剪断途中止め加工により
凹部５を形成して凹部成形品４を得る（第１図参照）、
第４１！ｌは、第１図の鎖線■−ＩＶに沿う中央部の幅
方向断面を示したもので、芯材４ａの厚さｔｃは、形成
された凹部５の深さＨと未切断部の厚さｔｒの和になる
。Next, a recess 5 is formed in the center of the main surface of the blank 3 by a shearing process to obtain a recess molded product 4 (see FIG. 1).
41st! 1 shows a cross section in the width direction of the central part along the chain line ■-IV in FIG. It becomes the sum of tr.
上に具体的寸法を挙げた狭幅板状クラッド材を加工して
容器を得る場合の寸法の具体例を続ければ次の通りであ
る。Continuing with the example of dimensions when obtaining a container by processing the narrow plate-like cladding material whose specific dimensions are listed above, it is as follows.
ブランク３の長さｌを３６．８＋ｇｎとし、凹部５の幅
を７．８ａ＋＋＊、長さを８．２請Ｉ、深さＨを０゜１
８＋ｕとする。The length l of the blank 3 is 36.8+gn, the width of the recess 5 is 7.8a++*, the length is 8.2cm, and the depth H is 0°1.
Let it be 8+u.
四部の形成はポンチ張出し成形によっても良い。The four parts may be formed by punch stretch molding.
第５図は、ポンチ張出し成形によって得られた凹部成形
品４の断面図である（第４図と同一の符号は、同一また
は対応個所に示す）。FIG. 5 is a sectional view of a concave molded product 4 obtained by punch stretch molding (the same reference numerals as in FIG. 4 indicate the same or corresponding parts).
なお、凹部形成の工程を狭幅板状クラッド材の切断前に
行い、凹部形成後に所定長ｌに切断して成形品４を得て
も良い。Note that the step of forming the recess may be performed before cutting the narrow plate-like cladding material, and the molded product 4 may be obtained by cutting to a predetermined length l after forming the recess.
皇員侠止肯１皇長底
凹部成形品４の被覆金属層４ｂを表面から電気化学的に
陽極酸化処理し、酸化皮膜を得る。第６図は、剪断加工
により凹部５を形成した凹部成形品の金属層４ｂを酸化
して金属酸化物層９とした容器８の断面図である。The coating metal layer 4b of the imperial long bottom concave molded product 4 is electrochemically anodized from the surface to obtain an oxide film. FIG. 6 is a cross-sectional view of a container 8, in which a metal layer 4b of a recessed molded product in which a recess 5 has been formed by shearing is oxidized to form a metal oxide layer 9.
なお、被覆金属Ｎ９の酸化は、表面から進行するもので
あるので、必ずしも被覆金属層の厚みを全て酸化する必
要はなく、必要な電気絶縁性能が得られればよい。In addition, since the oxidation of the coating metal N9 proceeds from the surface, it is not necessarily necessary to oxidize the entire thickness of the coating metal layer, as long as the necessary electrical insulation performance is obtained.
チーブの と。Cheeve's and.
第７図に示すように、容器８の凹部５の底面に、ガラス
または貴金属からなる半導体チップ接着層１０を形成す
る。絶縁物であるガラスを用いるか貴金属をｍいるかは
、チップの種類等により決定される。As shown in FIG. 7, a semiconductor chip adhesive layer 10 made of glass or noble metal is formed on the bottom surface of the recess 5 of the container 8. Whether glass or noble metal is used as an insulator is determined by the type of chip, etc.
次に、気密封着のための低溶融点ガラス粉末を、容器８
の周面部６上の金属酸化物層９上に、スクリーン印刷で
塗布し、仮焼成を行って、封着用ガラス層１１を形成す
る。Next, a low melting point glass powder for airtight sealing is placed in the container 8.
The glass layer 11 for sealing is formed by coating the metal oxide layer 9 on the peripheral surface 6 by screen printing and performing temporary firing.
同様にして容器蓋の周面部にも封着ガラス層を形成する
。Similarly, a sealing glass layer is also formed on the peripheral surface of the container lid.
半導体チップ１２は接着層ＩＯを加熱溶融させることに
より、またリードフレーム１２ａは封着ガラス層１１を
加熱溶融させることによりまず容器８に付着される（第
８図参照）。半導体チップ１２とリードフレーム１２ａ
は配線１２ｂで接続される。The semiconductor chip 12 is first attached to the container 8 by heating and melting the adhesive layer IO, and the lead frame 12a is first attached to the container 8 by heating and melting the sealing glass layer 11 (see FIG. 8). Semiconductor chip 12 and lead frame 12a
are connected by wiring 12b.
次に容器８に第８図に示すように容器蓋８゛をかぶせ、
両者の封着ガラス層１１．１１゛ を加熱溶融させて封
着する。Next, cover the container 8 with a container lid 8'' as shown in FIG.
Both sealing glass layers 11 and 11' are heated and melted to seal them.
（発明の効果）
本発明においては、集積回路容器（容器および容器蓋の
両方を含む）が金属を主材として構成されているから、
衝撃に強く熱を速やかに逃す。よって誤動作、故障が少
ない。(Effects of the Invention) In the present invention, since the integrated circuit container (including both the container and the container lid) is mainly made of metal,
Resistant to impact and quickly dissipates heat. Therefore, there are fewer malfunctions and breakdowns.
容器（容器および容器蓋の両方を含む）は、狭幅板状ク
ラッド材を切断し被覆金属層を表面から酸化することに
より製造される。従って必要な金属酸化物層を効率的に
金属芯材表面上に形成できる。さらに冷間加工でＩＭ造
できるため寸法精度が良い。The container (including both the container and the container lid) is manufactured by cutting a narrow plate-like cladding material and oxidizing the coating metal layer from the surface. Therefore, the necessary metal oxide layer can be efficiently formed on the surface of the metal core material. Furthermore, dimensional accuracy is good because it can be manufactured by IM using cold working.
第１図は、本発明による容器（容器および容器蓋の両方
を含む）の製造工程の一部を示す説明図；第２図は、第
１図の鎖線ｎ−ｎに沿う狭幅板状クラッド材の断面図；
第３図（Ａ）は、クラッドブランクの平面図、第３図（
Ｂ）はその端面図：
第４図は、剪断加工により凹部を形成した凹部成形品の
中央部の第１図の１ｌｌｌＶ−ｆＶに沿う断面図；
第５図は、ポンチ張出し成形により凹部を形成した凹部
成形品の中央部の断面図；
第６図は、凹部成形品の被覆金属層を酸化して得られた
容器の中央部断面図；
第７図は、チップ接着層および封着用ガラス層を形成し
た後の容器の中央部断面図；および第８図は、半導体チ
ップを収納した容器の中央部断面図である。
１− 円形断面棒状クラッド材
２： 狭幅板状クラッド材
３： クランドブランク ４： 凹部成形品５： 凹
部 ６： 凹部周面７： 長辺側側面
８： 容器８゛： 容器蓋 ・
９： 金属酸化物層１０： 接着層 １
１： 封着用ガラス層１２： 半導体チップ
出願人 住友金属工業株式会社 （外１名）代理人 弁
理士 広 瀬 章 −（外１名）尾７図
！
化２圀
ＣＡＩ 地３０１８）
為４図
す
秦５凹
朱乙図FIG. 1 is an explanatory diagram showing a part of the manufacturing process of the container (including both the container and the container lid) according to the present invention; FIG. Cross-sectional view of the material; Figure 3 (A) is a plan view of the clad blank;
B) is an end view thereof; Figure 4 is a sectional view taken along 1llV-fV in Figure 1 of the central part of the concave molded product with a concave formed by shearing; Figure 5 is a concave formed by punch overhang forming. Figure 6 is a cross-sectional view of the center of a container obtained by oxidizing the coating metal layer of the recessed molded product; Figure 7 is a cross-sectional view of the center of the container obtained by oxidizing the coating metal layer of the recessed molded product; Figure 7 is the chip adhesive layer and sealing glass layer FIG. 8 is a cross-sectional view of the center of the container after forming the semiconductor chip; FIG. 1- Rod-shaped cladding material with circular cross section 2: Narrow plate-shaped cladding material 3: Clamp blank 4: Concave molded product 5: Concave portion 6: Concave circumference 7: Long side side surface
8: Container 8゛: Container lid ・
9: Metal oxide layer 10: Adhesive layer 1
1: Glass layer for sealing 12: Semiconductor chip applicant Sumitomo Metal Industries, Ltd. (1 other person) Agent Patent attorney Akira Hirose - (1 other person) Figure 7! CAI 3018
Claims (6)
む周囲部を有する集積回路容器において、板状の金属芯
材と、該金属芯材を被覆する他の金属を表面から酸化す
ることにより形成された金属酸化物層とを備えることを
特徴とする集積回路容器。(1) In an integrated circuit container having a recess for accommodating a semiconductor chip and a surrounding area surrounding the recess, by oxidizing a plate-shaped metal core material and other metals covering the metal core material from the surface. an integrated circuit container comprising a metal oxide layer formed thereon.
層はアルミ酸化物である特許請求の範囲第１項記載の集
積回路容器。(2) The integrated circuit container according to claim 1, wherein the other metal is aluminum and the metal oxide layer is aluminum oxide.
む周面部を有する集積回路容器の製造方法において、酸
化物を形成する金属で被覆された金属芯材からなる狭幅
板状の材料を所定の長さに切断する工程と、凹部を形成
する工程と、芯材を覆う金属を表面から酸化する工程と
を備えることを特徴とする集積回路容器の製造方法。(3) In a method for manufacturing an integrated circuit container having a recess for accommodating a semiconductor chip and a peripheral surface surrounding the recess, a narrow plate-shaped material consisting of a metal core coated with an oxide-forming metal is used. A method for manufacturing an integrated circuit container, comprising the steps of cutting into a predetermined length, forming a recess, and oxidizing a metal covering a core material from the surface.
を圧延する工程により得られる特許請求の範囲第３項記
載の集積回路容器の製造方法。(4) The method for manufacturing an integrated circuit container according to claim 3, wherein the narrow plate-like material is obtained by rolling a rod-like cladding material having a circular cross section.
形成する金属をメッキする工程により得られる特許請求
の範囲第３項記載の集積回路容器の製造方法。(5) The method for manufacturing an integrated circuit container according to claim 3, wherein the narrow plate-like material is obtained by plating a metal that forms an oxide on the peripheral surface of a metal core material.
特許請求の範囲第３項ないし第５項のいづれかに記載の
集積回路容器の製造方法。(6) The method for manufacturing an integrated circuit container according to any one of claims 3 to 5, wherein the metal forming the oxide is aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62068642A JPH0724290B2 (en) | 1987-03-23 | 1987-03-23 | Method of manufacturing integrated circuit container |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62068642A JPH0724290B2 (en) | 1987-03-23 | 1987-03-23 | Method of manufacturing integrated circuit container |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63233551A true JPS63233551A (en) | 1988-09-29 |
| JPH0724290B2 JPH0724290B2 (en) | 1995-03-15 |
Family
ID=13379580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62068642A Expired - Lifetime JPH0724290B2 (en) | 1987-03-23 | 1987-03-23 | Method of manufacturing integrated circuit container |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0724290B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155299A (en) * | 1988-10-05 | 1992-10-13 | Olin Corporation | Aluminum alloy semiconductor packages |
| EP0700083A3 (en) * | 1988-10-05 | 1996-04-10 | Olin Corp |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318846U (en) * | 1986-07-22 | 1988-02-08 |
-
1987
- 1987-03-23 JP JP62068642A patent/JPH0724290B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318846U (en) * | 1986-07-22 | 1988-02-08 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155299A (en) * | 1988-10-05 | 1992-10-13 | Olin Corporation | Aluminum alloy semiconductor packages |
| EP0700083A3 (en) * | 1988-10-05 | 1996-04-10 | Olin Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0724290B2 (en) | 1995-03-15 |
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