JPH0137853B2 - - Google Patents
Info
- Publication number
- JPH0137853B2 JPH0137853B2 JP59117315A JP11731584A JPH0137853B2 JP H0137853 B2 JPH0137853 B2 JP H0137853B2 JP 59117315 A JP59117315 A JP 59117315A JP 11731584 A JP11731584 A JP 11731584A JP H0137853 B2 JPH0137853 B2 JP H0137853B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- groove
- resin
- burrs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 5
- 230000008602 contraction Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はリードフレームの製造方法に関し、一
層詳細には、プレス加工によつて形成されるもの
において、バリの発生を少なくし、封止物質にバ
リによるクラツク等の発生するのを有効に抑止す
ることのできるリードフレームの効果的な製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a lead frame, and more particularly to a method for manufacturing a lead frame by reducing the occurrence of burrs and improving the sealing material The present invention relates to an effective method for manufacturing a lead frame, which can effectively suppress the occurrence of cracks caused by burrs.
（従来の技術およびその問題点）
半導体装置に用いられるリードフレームはプレ
ス加工によつて形成されるのが一般的であるが、
各種材料の硬度の違い、プレス金型の摩耗等によ
つてプレスバリが発生する。プレス時のバリの発
生を抑止するには、プレスマシンのパワーアツプ
や、プレス金型のクリアランス調整などがある
が、バリの発生を完全に防ぐことは難しい状況に
ある。そして発生したバリに対しては、リードフ
レームのパターンの形状が複雑なこともあつて、
何ら処理されていないのが実情である。(Prior art and its problems) Lead frames used in semiconductor devices are generally formed by press working.
Press burrs occur due to differences in hardness of various materials, wear of press dies, etc. To prevent the occurrence of burrs during pressing, there are measures such as increasing the power of the press machine and adjusting the clearance of the press die, but it is difficult to completely prevent the occurrence of burrs. In addition, due to the complicated shape of the lead frame pattern, we have to deal with the burrs that occur.
The reality is that nothing has been done about it.
ところでリードフレームは半導体素子の搭載、
ワイヤボンデイングの後、樹脂あるいは低融点ガ
ラスなどを用いて封止される。その際リードフレ
ームにプレス加工により発生したバリが存在する
と、リードフレームと封止物質の熱膨張率の差異
により、半導体装置の使用時の発熱等によるサイ
クル的な熱膨張熱収縮が起こり、該熱膨張熱収縮
による応力集中、あるいは外部リードの曲げ等に
よる機械的外力による応力集中などにより、第１
図に例示するように、バリ近傍の封止物質にクラ
ツクが発生し、パツケージの気密性を劣化させ、
半導体装置の信頼性を低下させ、また寿命を短く
するという難点がある。 By the way, lead frames are used to mount semiconductor elements.
After wire bonding, it is sealed using resin or low melting point glass. At that time, if there are burrs on the lead frame caused by press working, the difference in thermal expansion coefficients between the lead frame and the sealing material will cause cyclical thermal expansion and contraction due to heat generation during use of the semiconductor device, and the resulting heat Due to stress concentration due to expansion thermal contraction or stress concentration due to mechanical external force due to bending of external leads, etc.
As illustrated in the figure, cracks occur in the sealing material near the burr, deteriorating the airtightness of the package.
This has the disadvantage of lowering the reliability of the semiconductor device and shortening its lifespan.
本発明は上記の難点を解消すべくなされたもの
であり、その目的とするところは、バリの発生を
少なくし、封止物質にバリによるクラツクが発生
するのを有効に抑止することのできるリードフレ
ームの製造方法を提供するにある。 The present invention has been made to solve the above-mentioned problems, and its purpose is to provide a lead that can reduce the occurrence of burrs and effectively prevent cracks caused by burrs from occurring in the sealing material. To provide a method for manufacturing frames.
（問題点を解決するための手段）
上記目的による本発明では、樹脂、低融点ガラ
スなどにより封止されるリードフレームの製造方
法において、金属帯条の裏面に、リードフレーム
に形成された際の、前記樹脂、低融点ガラスなど
により封止される封止部の外部リード部との境界
部近傍における内部リード部側縁稜に対応してあ
らかじめ凹溝を形成し、金属帯条の表面側からプ
レス金型によりリードフレームのパターンに打抜
いて、前記側縁稜に前記凹溝の一部を残すことを
特徴とする。(Means for Solving the Problems) In the present invention according to the above object, in a method for manufacturing a lead frame sealed with resin, low melting point glass, etc., , a concave groove is formed in advance corresponding to the side edge of the inner lead part in the vicinity of the boundary between the sealing part and the outer lead part, which is sealed with the resin, low melting point glass, etc. It is characterized in that it is punched into a lead frame pattern using a press die, leaving a part of the groove on the side edge edge.
（実施例）
以下本発明の好適な実施例を添付図面に基づき
詳細に説明する。(Embodiments) Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
第２図はリードフレーム１０の一例を示すもの
である。 FIG. 2 shows an example of the lead frame 10.
図において破線で囲まれる部分は樹脂で封止さ
れる封止部を示す。したがつて１２は内部リード
部、１４は外部リード部となるべきところであ
る。 In the figure, a portion surrounded by a broken line indicates a sealing portion sealed with resin. Therefore, 12 should be the internal lead part and 14 should be the external lead part.
封止部の外部リード部１４との境界部近傍の内
部リード部１２の側縁稜には、第３図に示すよう
に面取りを施す。またこの際、封止境界部におけ
るバリを残さないように、封止部近傍の外部リー
ド部側縁稜にまで及んで面取りを施すのがよい。
なお必要に応じて内部リード部１２全体の側縁稜
に面取りを施してもよい。 The side edges of the inner lead portion 12 near the boundary between the sealing portion and the outer lead portion 14 are chamfered as shown in FIG. In addition, at this time, it is preferable to chamfer the side edges of the external lead portion near the sealing portion so as not to leave any burrs at the sealing boundary portion.
Note that the side edges of the entire internal lead portion 12 may be chamfered if necessary.
したがつて、リードフレーム１０に半導体素子
を搭載して必要な配線を施して、樹脂封止した場
合に、第４図に示すように側縁稜に面取りが施さ
れているから、リードフレームと樹脂とに熱膨張
率に差異があつて、半導体装置として使用される
際の熱膨張、熱収縮が起つても、あるいは外部リ
ード部１４を折曲して使用する際の外部リード部
の折曲等による機械的外力が作用したときにも、
樹脂への応力が面取りした広い面積部から作用す
るから、従来のように尖鋭なプレスバリ部に応力
が集中することがなく、樹脂のクラツク発生を有
効に抑止しうる。 Therefore, when a semiconductor element is mounted on the lead frame 10, the necessary wiring is applied, and the semiconductor element is sealed with resin, the side edges are chamfered as shown in FIG. Even if there is a difference in the coefficient of thermal expansion between the resin and the resin, thermal expansion or contraction occurs when used as a semiconductor device, or when the external lead portion 14 is bent and used. Even when external mechanical forces such as
Since the stress on the resin is applied from the wide chamfered area, the stress does not concentrate on the sharp press burr parts as in the conventional case, and the occurrence of cracks in the resin can be effectively suppressed.
なお、低融点ガラス封止型セラミツクパツケー
ジのように、リードフレームが低融点ガラスによ
つて封止されるものにおいても（図示せず）、本
発明に係るリードフレーム１０を用いることによ
つて、低融点ガラスにクラツクが発生することが
なく、気密性が保持され、信頼度の高い、かつ寿
命の長い半導体装置として供することができる。 Note that even in a package in which the lead frame is sealed with low-melting glass (not shown), such as a low-melting-point glass-sealed ceramic package, by using the lead frame 10 according to the present invention, No cracks occur in the low melting point glass, airtightness is maintained, and a highly reliable and long-life semiconductor device can be provided.
次にリードフレーム１０の製造方法について第
５図に基づき説明する。 Next, a method for manufacturing the lead frame 10 will be explained based on FIG. 5.
まず、金属帯条裏面側に、リードフレーム形状
に形成された際の、内部リード部全部、または外
部リード部との境界部近傍の内部リード部の側縁
稜となるべき側縁稜を含むように、かつ側縁稜に
沿つてＶ溝２８を刻設する。 First, on the back side of the metal strip, when formed into a lead frame shape, include the entire internal lead part or the side edge edge of the internal lead part near the boundary with the external lead part. A V-groove 28 is carved along the side edge ridge.
次いで金属帯条を表面側からプレス金型を用い
てリードフレームのパターンに打抜いて、側縁稜
にＶ溝２８の傾斜壁の一部を残すことによつて、
同図ｂに示すように面取りを施すものである。 Next, the metal strip is punched from the front side into a lead frame pattern using a press die, leaving a part of the sloped wall of the V groove 28 on the side edge edge.
Chamfering is performed as shown in Figure b.
この方法によると、リードフレームの側縁稜に
有効な面取り部が形成される。また金属帯条に裏
面側からあらかじめＶ溝が形成されていて、プレ
スによつて打ち抜く厚さが減じられるから、プレ
ス加工によつて生じるバリを可及的に少なくする
ことができ、バリが発生したとしても、このバリ
はリードフレームの裏面側までは突出しない。 According to this method, an effective chamfer is formed on the side edge edge of the lead frame. In addition, since the V-groove is pre-formed on the metal strip from the back side, and the thickness of the punching is reduced by pressing, it is possible to minimize burrs that occur during press processing, and burrs do not occur. Even if it does, this burr will not protrude all the way to the back side of the lead frame.
したがつて封止用樹脂や低融点ガラスにクラツ
クが発生するのを抑止できる。 Therefore, it is possible to prevent cracks from occurring in the sealing resin or low melting point glass.
なお上記実施例ではＶ溝を例として説明した
が、これに限られることはなく、Ｕ字状の溝等で
あつてもよいことはもちろんである。 Although the above embodiments have been described using a V-groove as an example, the present invention is not limited to this, and it goes without saying that a U-shaped groove or the like may also be used.
（発明の効果）
以上のように本発明方法によれば、あらかじめ
金属帯条の裏面側に凹溝を形成し、次いでこの凹
溝内に抜き線が位置するように表面側からプレス
金型によつて金属帯条を所定のパターンに打抜く
ものであるから、プレスによつて打抜く厚さが減
じられ、バリがほとんど発生しないか、発生した
としても小さく、しかも凹溝内に生じるのでリー
ドフレームの裏面側に突出しない。(Effects of the Invention) As described above, according to the method of the present invention, a groove is formed in advance on the back side of the metal strip, and then a press die is inserted from the front side so that the punch line is located in the groove. Therefore, since the metal strip is punched into a predetermined pattern, the thickness of the punch is reduced by the press, and burrs are hardly generated, or even if they occur, they are small, and moreover, they occur within the concave grooves, making it difficult to lead. Do not protrude to the back side of the frame.
したがつて封止用樹脂や低融点ガラスにクラツ
クを発生させるおそれのないリードフレームを提
供しうる。 Therefore, it is possible to provide a lead frame that does not cause cracks in the sealing resin or low melting point glass.
以上、本発明につき好適な実施例を挙げて種々
説明したが、本発明はこの実施例に限定されるも
のではなく、発明の精神を逸脱しない範囲内で多
くの改変を施し得るのはもちろんのことである。 The present invention has been variously explained above with reference to preferred embodiments, but the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That's true.
第１図はバリによつて封止物質にクラツクが発
生した状態を示す説明図、第２図はリードフレー
ムの一例を示す平面図、第３図はその内部リード
部の端面図、第４図は封止物質による封止状態を
示す説明図、第５図は面取りを施す工程を示す説
明である。
１０……リードフレーム、１２……内部リード
部、１４……外部リード部、２８……Ｖ溝。
Fig. 1 is an explanatory diagram showing a state in which cracks have occurred in the sealing material due to burrs, Fig. 2 is a plan view showing an example of a lead frame, Fig. 3 is an end view of the internal lead part, and Fig. 4 5 is an explanatory diagram showing a sealing state by a sealing substance, and FIG. 5 is an explanatory diagram showing a process of chamfering. 10...Lead frame, 12...Inner lead part, 14...Outer lead part, 28...V groove.
Claims (1)
ードフレームの製造方法において、金属帯条の裏
面に、リードフレームに形成された際の、前記樹
脂、低融点ガラスなどにより封止される封止部の
外部リード部との境界部近傍における内部リード
部側縁稜に対応してあらかじめ凹溝を形成し、金
属帯条の表面側からプレス金型によりリードフレ
ームのパターンに打抜いて、前記側縁稜に前記凹
溝の一部を残すことを特徴とするリードフレーム
の製造方法。1. In a method for manufacturing a lead frame sealed with resin, low melting point glass, etc., a sealing portion sealed with the resin, low melting point glass, etc. when formed on the lead frame on the back side of a metal strip. A groove is formed in advance corresponding to the side edge edge of the inner lead part near the boundary with the outer lead part, and a groove is punched out from the surface side of the metal strip in the pattern of the lead frame using a press die. A method for manufacturing a lead frame, characterized in that a part of the groove is left on the edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11731584A JPS60261163A (en) | 1984-06-07 | 1984-06-07 | Lead frame and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11731584A JPS60261163A (en) | 1984-06-07 | 1984-06-07 | Lead frame and manufacture thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63319001A Division JPH01215412A (en) | 1988-12-16 | 1988-12-16 | Press working method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60261163A JPS60261163A (en) | 1985-12-24 |
| JPH0137853B2 true JPH0137853B2 (en) | 1989-08-09 |
Family
ID=14708705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11731584A Granted JPS60261163A (en) | 1984-06-07 | 1984-06-07 | Lead frame and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60261163A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62186555A (en) * | 1986-02-12 | 1987-08-14 | Hitachi Cable Ltd | Press molded lead frame |
| JPS6333642U (en) * | 1986-08-19 | 1988-03-04 | ||
| JPH0677374A (en) * | 1992-08-27 | 1994-03-18 | Nec Corp | Lead for semiconductor device and manufacture thereof |
| JP3685057B2 (en) * | 1999-12-08 | 2005-08-17 | 日亜化学工業株式会社 | LED lamp and manufacturing method thereof |
| WO2003069185A1 (en) * | 2001-12-24 | 2003-08-21 | Van Doorne's Transmissie B.V. | Work piece, metal push belt and method and processing tool for producing the same |
| JP5549612B2 (en) * | 2011-01-31 | 2014-07-16 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP6236484B2 (en) * | 2016-02-24 | 2017-11-22 | シャープ株式会社 | Light emitting device |
| JP6394634B2 (en) | 2016-03-31 | 2018-09-26 | 日亜化学工業株式会社 | Lead frame, package, light emitting device, and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501649A (en) * | 1973-05-07 | 1975-01-09 | ||
| JPS501658A (en) * | 1973-05-07 | 1975-01-09 | ||
| JPS51150185A (en) * | 1975-06-18 | 1976-12-23 | Hirata Press Kogyo Kk | Shearing processing |
| JPS5574013A (en) * | 1978-11-28 | 1980-06-04 | Tanaka Precious Metal Ind | Electric contact band material and method of fabricating same |
| JPS55160449A (en) * | 1979-05-31 | 1980-12-13 | Toshiba Corp | Semiconductor device |
| JPS60123047A (en) * | 1983-12-07 | 1985-07-01 | Toshiba Corp | Semiconductor device |
-
1984
- 1984-06-07 JP JP11731584A patent/JPS60261163A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501649A (en) * | 1973-05-07 | 1975-01-09 | ||
| JPS501658A (en) * | 1973-05-07 | 1975-01-09 | ||
| JPS51150185A (en) * | 1975-06-18 | 1976-12-23 | Hirata Press Kogyo Kk | Shearing processing |
| JPS5574013A (en) * | 1978-11-28 | 1980-06-04 | Tanaka Precious Metal Ind | Electric contact band material and method of fabricating same |
| JPS55160449A (en) * | 1979-05-31 | 1980-12-13 | Toshiba Corp | Semiconductor device |
| JPS60123047A (en) * | 1983-12-07 | 1985-07-01 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60261163A (en) | 1985-12-24 |
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