JPS63232415A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63232415A JPS63232415A JP6602687A JP6602687A JPS63232415A JP S63232415 A JPS63232415 A JP S63232415A JP 6602687 A JP6602687 A JP 6602687A JP 6602687 A JP6602687 A JP 6602687A JP S63232415 A JPS63232415 A JP S63232415A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- conductivity type
- silicon film
- hydrogenated amorphous
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
一導電型の単結晶シリコン膜と反対導電型の水素化アモ
ルファスシリコン膜とを接触させて構成するヘテロダイ
オードの電流／電圧特性を向上させる改良である。DETAILED DESCRIPTION OF THE INVENTION [Summary] This is an improvement that improves the current/voltage characteristics of a heterodiode formed by contacting a single-crystal silicon film of one conductivity type with a hydrogenated amorphous silicon film of the opposite conductivity type.
ヘテロダイオードを構成する水素化アモルファスシリコ
ン膜に水素プラズマ照射をなすヘテロダイオードの製造
方法である。This is a method for manufacturing a hetero diode in which a hydrogenated amorphous silicon film constituting the hetero diode is irradiated with hydrogen plasma.
本発明は、半導体装置の製造方法の改良に関する。特に
、ヘテロダイオードの電流／電圧特性を向上する改良に
関する。The present invention relates to an improvement in a method for manufacturing a semiconductor device. In particular, it relates to improvements that improve the current/voltage characteristics of heterodiodes.
一導電型の単結晶シリコン膜と反対導電型の水素化アモ
ルファスシリコン膜との接合をもって構成するヘテロダ
イオードが知られている。2. Description of the Related Art Heterodiodes are known that are constructed by joining a single-crystal silicon film of one conductivity type and a hydrogenated amorphous silicon film of an opposite conductivity type.
第２図参照
図において、１は２，０００＾厚の金膜よりなる正電極
であり、２は５００ ｇ ｍ厚の１Ｏ１５ｃ１１−３の
ｐ型単結品シリコン膜であり、３は５，０００＾厚の１
００Ω・０層のｎ型の水素化アモルファスシリコン膜で
あり、４は１ＩＬ−厚のアルミニウム膜よりなる負電極
である。In the diagram shown in Figure 2, 1 is a positive electrode made of a 2,000^ thick gold film, 2 is a p-type single crystal silicon film of 1O15c11-3 with a thickness of 500 gm, and 3 is a 5,000^ thick gold film. ^Thick 1
It is an n-type hydrogenated amorphous silicon film of 00 Ω/0 layer, and 4 is a negative electrode made of an aluminum film of 1 IL-thickness.
このヘテロダイオードを製造するには、 ５００＃Ｌ
膳厚ノ１０１５ｃｍ−３のｐｌＡ単結晶シリ：１７Ｈ２
上に、プラズマＣＶＤ法を使用して、 ５，０００＾厚
の １００Ω・０層のｎ型の水素化アモルファスシリコ
ン膜３を形成し、 ５００７４■厚の１０１５ｃ層−
３のｐ型車結晶シリコン膜２の下面に金膜ｌを蒸着また
はスパッタし、 ５．０００人厚の １００Ω・ｃｍの
ｎ型の水素化アモルファスシリコン膜３の上面にアルミ
ニウム膜４を蒸着また□はスパッタする。To manufacture this hetero diode, 500#L
plA single crystal silicon with a thickness of 1015 cm-3: 17H2
On top of this, a 100Ω/0 layer of n-type hydrogenated amorphous silicon film 3 with a thickness of 5,000mm is formed using the plasma CVD method, and a 1015C layer with a thickness of 50074mm is formed.
A gold film 1 is evaporated or sputtered on the lower surface of the p-type crystal silicon film 2 of 3, and an aluminum film 4 is evaporated or sputters.
たＣ１上記のプラズマＣＶＤ法を使用して、水素化アモ
ルファスシリコン膜を形成する工程において、単結晶シ
リコン膜と水素化アモルファスシリコン膜との界面に欠
陥が発生し、発生・再結合電流が増加するために逆方向
電圧に対して電流値が大きくなり、また、順方向電圧印
加時にｎ値が大きくなるという欠点がある。C1 In the process of forming a hydrogenated amorphous silicon film using the plasma CVD method described above, defects occur at the interface between the single crystal silicon film and the hydrogenated amorphous silicon film, and the generation/recombination current increases. Therefore, there is a drawback that the current value becomes large with respect to a reverse voltage, and the n value becomes large when a forward voltage is applied.
本発明の目的は、この欠点を解消することにあり、発生
舎再結合電流を減少し、電流／電圧特性のすぐれたヘテ
ロダイオードを製造する方法を提供することにある。The object of the present invention is to eliminate this drawback, and to provide a method for manufacturing a heterodiode that reduces the generated recombination current and has excellent current/voltage characteristics.
〔問題点を解決するための手段〕
上記の目的を達成するために本発明が採った手段は、−
導電型の単結晶′シリコン膜と反対導電型の水素化アモ
ルファスシリコン膜との接合を形成した後、反対導電型
の水素化アモルファスシリコン膜に水素プラズマを照射
することにある。[Means for solving the problems] The means taken by the present invention to achieve the above object are as follows:-
The method involves forming a junction between a single-crystalline silicon film of a conductivity type and a hydrogenated amorphous silicon film of an opposite conductivity type, and then irradiating the hydrogenated amorphous silicon film of an opposite conductivity type with hydrogen plasma.
導電型は、単結晶シリコン膜と水素化アモルファスシリ
コン膜とのいずれがｐ型でいずれがｎ型でもさしつかえ
ないが、単結晶シリコン膜をｎ型とし水素化アモルファ
スシリコン膜をｐ型とするときは、水素化アモルファス
シリコン膜に接触する電極も金膜であることが望ましい
。Regarding the conductivity type, either the single crystal silicon film or the hydrogenated amorphous silicon film may be p type and the other n type, but when the single crystal silicon film is n type and the hydrogenated amorphous silicon film is p type, It is desirable that the electrode in contact with the hydrogenated amorphous silicon film is also a gold film.
一導電型の単結晶シリコン膜と反対導電型の水素化アモ
ルファスシリコン膜との接合を形成した後、反対導電型
の水素化アモルファスシリコンＩＩｑに水素プラズマを
照射すると、水素が反対導電型の水素化アモルファスシ
リコン膜中を拡散して、アモルファスシリコンと結晶シ
リコンの界面のダングリングボンドに水素原子が取り込
まれて、ダングリングボンドが消滅すると考えられる。After forming a junction between a single crystal silicon film of one conductivity type and a hydrogenated amorphous silicon film of the opposite conductivity type, when hydrogen plasma is irradiated to the hydrogenated amorphous silicon IIq of the opposite conductivity type, the hydrogen is hydrogenated to the opposite conductivity type. It is thought that hydrogen atoms diffuse through the amorphous silicon film and are incorporated into dangling bonds at the interface between amorphous silicon and crystalline silicon, causing the dangling bonds to disappear.
−導電型の単結晶シリコン膜と反対導電型の水素化アモ
ルファスシリコン膜との接合を形成した後、プラズマＣ
ＶＤ装置を使用して、Ｙ Ｑ、３Ｔｏｒｒの真空中で、
直径 １００１層のウェーハに対し５０Ｗのパワーで１
０分間、反対導電型の水素化アモルファスシリコン膜に
水素プラズマを照射した場合、第３図に示すように電流
／電圧特性が改良することを確認した０図において、Ｙ
軸は電流であり、Ｘ軸は電圧であるが、順方向に対して
はｎ値が１．１５ （酸素プラズマ照射しない場合は
１．３）に改善しており、逆方向電流も大幅に減少して
いる。- After forming a junction between a single crystal silicon film of a conductivity type and a hydrogenated amorphous silicon film of an opposite conductivity type, plasma C
Using a VD device, Y Q, in a vacuum of 3 Torr,
1 at a power of 50W for a wafer with a diameter of 1001 layers
In Figure 3, it was confirmed that when a hydrogenated amorphous silicon film of the opposite conductivity type is irradiated with hydrogen plasma for 0 minutes, the current/voltage characteristics are improved as shown in Figure 3.
The axis is current, and the
1.3), and the reverse current has also been significantly reduced.
以下、図面を参照しつ一１本発明の一実施例に係る半導
体装置の製造方法についてさらに説明する。Hereinafter, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be further described with reference to the drawings.
第１図参照
モノシランとリンと水素とを反応性ガスとするプラズマ
ＣＶＤ法を使用し、Ｉ Ｔｏｒｒの真空中で。A plasma CVD method using monosilane, phosphorus, and hydrogen as reactive gases was used in a vacuum of I Torr (see FIG. 1).
基板温度は２５０℃に保持して １３．５８Ｍ Ｈｚ（
７） ＲＦパワーを１５Ｗ（直径１００膳麿０ウェーハ
）与えて、５００ｇｍ厚の１０１５ｃ腸−３のｐ型車結
晶シリコン膜ｚ上に、プラズマＣＶＤ法を使用して、
５，０００人厚の １０００Ｉｌｃ履のｎ型の水素化ア
モルファスシリコン膜３を形成し、そのま覧、反応ガス
を水素のみに切り替え０．３Ｔｏｒｒの圧力下において
１３．５８ＭＨｚのＲＦパワーを １００Ｗ （直径１
００ｍｍのウェーハ）与えて、水素プラズマ照射をなす
。The substrate temperature was maintained at 250℃ and the frequency was 13.58MHz (
7) Applying RF power of 15 W (diameter 100 wafers), using a plasma CVD method on a 500 gm thick 1015C-3 p-type crystalline silicon film,
An n-type hydrogenated amorphous silicon film 3 with a thickness of 1000 Ilc was formed, and the reaction gas was switched to hydrogen only, and an RF power of 13.58 MHz was applied to 100 W (diameter) under a pressure of 0.3 Torr. 1
00 mm wafer) and subjected to hydrogen plasma irradiation.
この工程によって、ｐ型車結晶シリコン膜２とｎ型の水
素化アモルファスシリコン膜３との界面の状態が改善さ
れる。This step improves the state of the interface between the p-type crystalline silicon film 2 and the n-type hydrogenated amorphous silicon film 3.
ｐ型車結晶シリコン膜２の下面に金Ｂａｔを蒸着または
スパッタし、ｎ型の水素化アモルファスシリコン膜３の
上面にアルミニウム膜４を蒸着またはスパッタする。Gold Bat is vapor-deposited or sputtered on the lower surface of the p-type wheel crystal silicon film 2, and an aluminum film 4 is vapor-deposited or sputtered on the upper surface of the n-type hydrogenated amorphous silicon film 3.
以上の工程をもって製造したヘテロダイオードは、ｐ型
車結晶シリコン１１！２とｎ型の水素化アモルファスシ
リコン膜３との界面が良好であるため、発生番再結合電
流が少なく、ｎ値が低く、逆方向電流は少なく、電流／
電圧特性は大幅に向上している・
〔発明の効果〕
以上説明せるとおり、本発明に係るヘテロダイオードの
製造方法においては、−導電型の単結晶シリコン膜と反
対導電型の水素化アモルファスシリコン膜との接合を形
成した後、反対導電型の水素化アモルファスシリコン膜
に水素プラズマを照射することとされいるので、−導電
型の単結晶シリコン膜と反対導電型の水素化アモルファ
スシリコン膜との界面が良好とされているため、発生・
再結合電流が少なく、ｎ値が低く、逆方向電流は少なく
、電流／電圧特性は大幅に向上している。The heterodiode manufactured through the above process has a good interface between the p-type crystalline silicon 11!2 and the n-type hydrogenated amorphous silicon film 3, so the generated recombination current is small and the n value is low. The reverse current is small and the current/
The voltage characteristics are significantly improved. [Effects of the Invention] As explained above, in the method for manufacturing a hetero diode according to the present invention, a single crystal silicon film of a negative conductivity type and a hydrogenated amorphous silicon film of an opposite conductivity type are used. After forming a junction with the hydrogenated amorphous silicon film of the opposite conductivity type, hydrogen plasma is irradiated to the hydrogenated amorphous silicon film of the opposite conductivity type. Since it is said that the
The recombination current is small, the n value is low, the reverse current is small, and the current/voltage characteristics are significantly improved.
第１図は、本発明の一実施例に係る半導体装置の製造方
法を実施して製造したヘテロダイオードの断面図である
。
第２図は、従来技術に係るヘテロダイオードの断面図で
ある。
第３図は１本発明の効果確認試験の結果である。
ｌ−Φ・正電極、
２・拳・単結晶シリコン膜、
３・・−水素化アモルファスシリコン膜、４・・・負電
極。FIG. 1 is a cross-sectional view of a hetero diode manufactured by implementing a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a conventional heterodiode. FIG. 3 shows the results of a test to confirm the effectiveness of the present invention. l-Φ, positive electrode, 2, fist, single crystal silicon film, 3...-hydrogenated amorphous silicon film, 4... negative electrode.
Claims (1)
化アモルファスシリコン膜（３）とを接触させてヘテロ
ダイオードを製造する半導体装置の製造方法において、 前記反対導電型の水素化アモルファスシリコン膜（３）
に水素プラズマ照射をなす ことを特徴とする半導体装置の製造方法。[Scope of Claims] A method for manufacturing a semiconductor device in which a heterodiode is manufactured by bringing a single crystal silicon film (2) of one conductivity type into contact with a hydrogenated amorphous silicon film (3) of an opposite conductivity type, comprising: the opposite conductivity type; Type hydrogenated amorphous silicon film (3)
1. A method for manufacturing a semiconductor device, comprising irradiating hydrogen plasma on the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6602687A JPS63232415A (en) | 1987-03-20 | 1987-03-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6602687A JPS63232415A (en) | 1987-03-20 | 1987-03-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63232415A true JPS63232415A (en) | 1988-09-28 |
Family
ID=13303993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6602687A Pending JPS63232415A (en) | 1987-03-20 | 1987-03-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63232415A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336623A (en) * | 1992-03-02 | 1994-08-09 | Showa Shell Sekiyu K.K. | Process for producing integrated solar cell |
| CN102130229A (en) * | 2010-12-27 | 2011-07-20 | 中国科学院半导体研究所 | Method for improving electroluminescent performance of n-ZnO/AlN/p-GaN heterojunction light-emitting diode |
-
1987
- 1987-03-20 JP JP6602687A patent/JPS63232415A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336623A (en) * | 1992-03-02 | 1994-08-09 | Showa Shell Sekiyu K.K. | Process for producing integrated solar cell |
| CN102130229A (en) * | 2010-12-27 | 2011-07-20 | 中国科学院半导体研究所 | Method for improving electroluminescent performance of n-ZnO/AlN/p-GaN heterojunction light-emitting diode |
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