JPS63230768A - Electrically conductive silicone resin - Google Patents
Electrically conductive silicone resinInfo
- Publication number
- JPS63230768A JPS63230768A JP6624487A JP6624487A JPS63230768A JP S63230768 A JPS63230768 A JP S63230768A JP 6624487 A JP6624487 A JP 6624487A JP 6624487 A JP6624487 A JP 6624487A JP S63230768 A JPS63230768 A JP S63230768A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- silicone
- silicone resin
- formula
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002050 silicone resin Polymers 0.000 title claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 abstract description 3
- 239000003054 catalyst Substances 0.000 abstract description 2
- 239000003086 colorant Substances 0.000 abstract description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 17
- 238000001723 curing Methods 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 238000012812 general test Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- OOYGSFOGFJDDHP-KMCOLRRFSA-N kanamycin A sulfate Chemical group OS(O)(=O)=O.O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CN)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O[C@@H]2[C@@H]([C@@H](N)[C@H](O)[C@@H](CO)O2)O)[C@H](N)C[C@@H]1N OOYGSFOGFJDDHP-KMCOLRRFSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体装置に用いられるシリコーン導電性樹脂
に関する。さらに詳しくは、本発明はシリコン素子を金
属性のリードフレームに固着するばあいに接着剤として
用いられるシリコーン導電性樹脂に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a silicone conductive resin used in semiconductor devices. More specifically, the present invention relates to a silicone conductive resin used as an adhesive when bonding a silicon element to a metal lead frame.
［従来の技術］
従来より半導体装置に用いられる導電性の接着剤にはベ
ース樹脂となるエポキシ系樹脂に導電担体として銀の微
細粉末を添加した導電性樹脂が広く用いられている。[Prior Art] Conventionally, conductive resins made by adding fine silver powder as a conductive carrier to an epoxy resin as a base resin have been widely used as conductive adhesives used in semiconductor devices.
第１図は前記導電性樹脂が用いられた半導体装置の構造
を示す断面図である。該半導体装置は、導電層を形成す
るための導電性樹脂（６）でリードフレームのダイアタ
ッチエリア（２）に固着された半導体素子（１）、該半
導体素子（１）の電極とリードフレームのリードフィン
ガー（３）とを電気的に接続するためにボンディングさ
れた金属細線（４）および半導体素子（１）と金属線１
ｆ（４１とを機械的に保護するための樹脂成形部（５）
から構成されたものである。FIG. 1 is a sectional view showing the structure of a semiconductor device using the conductive resin. The semiconductor device includes a semiconductor element (1) fixed to a die attach area (2) of a lead frame with a conductive resin (6) for forming a conductive layer, and an electrode of the semiconductor element (1) and an electrode of the lead frame. The thin metal wire (4) bonded to the lead finger (3) and the semiconductor element (1) and the metal wire 1
Resin molded part (5) for mechanically protecting f (41)
It is composed of.
ここで従来より用いられている導電性樹脂（６）のベー
ス樹脂はエポキシ系樹脂であり、たとえばノボラック型
エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂や脂肪
族環状エポキシ樹脂などの基剤に硬化剤としてフェノー
ル樹脂または酸無水物を添加したものが多く用いられて
いる。かかるエポキシ樹脂に導電性を付与させるために
一般に薄片状の銀が多量に用いられており、その銀の含
有量は通常６５〜８５重山％である。The base resin of the conductive resin (6) conventionally used here is an epoxy resin, for example, a novolak type epoxy resin, a bisphenol A type epoxy resin, an aliphatic cyclic epoxy resin, etc., and phenol as a curing agent. Those containing resin or acid anhydride are often used. In order to impart electrical conductivity to such epoxy resins, flaky silver is generally used in large amounts, and the silver content is usually 65 to 85%.
［発明が解決しようとする問題点コ
しかしながら、前記エポキシ樹脂に薄片状の銀を含有さ
せた導電性樹脂の加熱硬化後の圧縮応力は、１８００〜
１９０ＯＮ！？ ／ ｅ：ｔａと大きいので、ダイヤタ
ッチエリア（２１に固着された半導体素子（１）に対し
て圧縮応力が加わり、半導体素子（１）の変形が発生し
、半導体素子（１）の割れや電気特性変化がおこるなど
の問題があり、しかも多山の銀が用いられているので、
えられる半導体装置が高価となり、また銀の価格が高い
ので銀を回収することができるようにするためには樹脂
のポットライフが長くなり、したがって硬化時間が長く
なるなどの問題がある。[Problems to be Solved by the Invention] However, the compressive stress after heat curing of the conductive resin in which the epoxy resin contains flaky silver is 1800~
190 ON! ? / e:ta is large, compressive stress is applied to the semiconductor element (1) fixed to the diamond touch area (21), deformation of the semiconductor element (1) occurs, cracking of the semiconductor element (1), electrical There are problems such as changes in properties, and since a large amount of silver is used,
The resulting semiconductor devices are expensive, and the price of silver is high, so in order to be able to recover the silver, the pot life of the resin becomes longer, and therefore the curing time becomes longer.
そこで本発明は前記のような従来技術の問題点を解消し
た導電性樹脂をつるためになされたもので、樹脂硬化後
の圧縮応力が小さく、しかも導電担体を高価な銀などの
貴金属から他の材料に変更することで、価格の低減化を
はかった導電性樹脂をうることを目的とする。Therefore, the present invention has been devised to create a conductive resin that solves the problems of the prior art as described above. The aim is to create a conductive resin at a lower price by changing the material.
［問題点を解決するための手段］
すなわち、本発明はシリコーン樹脂およびカーボンから
なるシリコーン導電性樹脂に関する。[Means for Solving the Problems] That is, the present invention relates to a silicone conductive resin made of a silicone resin and carbon.
［作用および実施例］
本発明のシリコーン導電性樹脂はシリコーン樹脂および
カーボンからなる。[Function and Examples] The silicone conductive resin of the present invention consists of a silicone resin and carbon.
前記シリコーン樹脂としてはたとえば、一般式（Ｉｈ）
５ｉ（ＯＨ）。（式中、Ｒ１は置換または非置換の
炭素数１〜６の１価の炭化水素基、■は２または３、ｎ
は１または２を示し、ｌ ＋ｎ −４Ｆある）で表わさ
れる化合物０〜５０重量％、一般式（１０） （Ｒ２
） ５ｉＱＳｉ（Ｒ２）、 （叶）、（式中、Ｒ２は
ｑ
置換または非置換の炭素数１〜６の１価の炭化水素基、
ｐおよびｑは１または２、Ｑはベンゼン環を示し、ｌ）
＋Ｑ−３である）で表わされる化合物０〜８０重量％
および一般式
（Ｃ）１３ ）３５ｉｎ（Ｓｉ（ＣＨｓ ）２０）。５
ｉ（ＣＨ３）ｓ （式中、ｎは５〜４７の整数を示す）
で表わされる化合物０〜３０重量％ならびに必要に応じ
て添加される硬化用触媒０．０１〜１０重量％からなる
ベースレジンがあげられる。As the silicone resin, for example, general formula (Ih)
5i(OH). (In the formula, R1 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, ■ is 2 or 3, n
represents 1 or 2, and 0 to 50% by weight of the compound represented by the general formula (10) (R2
) 5iQSi(R2), (Kano), (wherein R2 is q-substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms,
p and q are 1 or 2, Q represents a benzene ring, l)
+Q-3) 0 to 80% by weight of the compound represented by
and general formula (C)13)35in(Si(CHs)20). 5
i(CH3)s (in the formula, n represents an integer from 5 to 47)
Examples include base resins containing 0 to 30% by weight of the compound represented by the formula and 0.01 to 10% by weight of a curing catalyst added as necessary.
ここで前記一般式（Ｒ１） ５ｉ（ＯＨ）ｎで示され
るシリコーン樹脂の例としては（ＣｓＨｓ） （Ｃ）Ｉ
ｓ ）２５ｉ（０旧、（Ｃ＠ＨＳ） ２（ＣＨｓ） Ｓ
ｉ （０旧など、前記一般式％式％
コーン樹脂の例としては
など、前記一般式
％式％
コーン樹脂の例としては
（式中、ｎは１０〜１５０の整数を示す）などがあげら
れる。Here, as an example of the silicone resin represented by the general formula (R1) 5i(OH)n, (CsHs) (C)I
s ) 25i (0 old, (C@HS) 2 (CHs) S
Examples of corn resins include (where n represents an integer from 10 to 150), etc. .
前記シリコーン樹脂の重層平均分子量は１２００〜１５
０００であり、また該樹脂の粘度は１０〜３５０Ｃ８で
ある。The layer average molecular weight of the silicone resin is 1200 to 15.
000, and the viscosity of the resin is 10 to 350C8.
前記カーボンとしては粒子径が２０ＢＭ以下の球状もの
を用いるのが好ましい。該粒子径は、２０−をこえ、球
状でないばあい、グラファイトの添加量を増やすと硬化
後のシート抵抗の増加あるいはシェア強度の低下が発生
することがある。It is preferable to use spherical carbon having a particle diameter of 20 BM or less. If the particle size exceeds 20 mm and is not spherical, increasing the amount of graphite added may result in an increase in sheet resistance or a decrease in shear strength after curing.
前記カーボンは、前記シリコーン樹脂１重量部に対して
１〜２重通部添加して用いるのが好ましい。該カーボン
の添加量が１重量部未満であるばあい、キュア後のシー
ト抵抗が高くなり、たとえば基板またはＧＮＤの電位が
上昇するなどの問題が発生する。また２重量部をこえる
とキュア後のシェア強度が大幅に低下する。The carbon is preferably added in 1 to 2 parts per 1 part by weight of the silicone resin. If the amount of carbon added is less than 1 part by weight, the sheet resistance after curing increases, causing problems such as an increase in the potential of the substrate or GND. Moreover, if it exceeds 2 parts by weight, the shear strength after curing will decrease significantly.
前記カーボンをシリコーン樹脂に添加し、たとえばロー
ル、バンバリーミキサ−、ニーダなどの混合手段によっ
て均一な組成となるように混合することにより本発明の
シリコーン導電性樹脂がえられるが、該シリコーン導電
性樹脂にはざらに必要に応じてたとえばカーボンブラッ
クなどの着色剤を添加することができる。The silicone conductive resin of the present invention can be obtained by adding the carbon to the silicone resin and mixing it to a uniform composition using a mixing means such as a roll, a Banbury mixer, or a kneader. In addition, a coloring agent such as carbon black may be added if necessary.
以下、実施例および比較例をあげて本発明をさらに詳細
に説明するが、本発明はかかる実施例のみに限定される
ものではない。Hereinafter, the present invention will be explained in more detail with reference to Examples and Comparative Examples, but the present invention is not limited only to these Examples.
実施例１〜７および比較例１
第１表の配合割合となるようにシリコーン樹脂およびカ
ーボン（平均粒子径＝５０Å以下）を調整してシリコー
ン導電性樹脂を作製した。つぎにえられたシリコーン導
電性樹脂をライカイ機で６０分間充分に混合したのち、
１７５℃で硬化させたときのキュア時間に対する圧縮応
力を下記の方法で測定した。その結果を第２表に示す。Examples 1 to 7 and Comparative Example 1 Silicone conductive resins were prepared by adjusting the silicone resin and carbon (average particle size = 50 Å or less) to the blending ratios shown in Table 1. After thoroughly mixing the silicone conductive resin obtained next for 60 minutes in a Raikai machine,
Compressive stress with respect to curing time when cured at 175° C. was measured by the following method. The results are shown in Table 2.
また、硬化後のシリコーン導電性樹脂の物性として熱伝
導率および電気抵抗率を下記の測定方法で調べた。その
結果を第３表に示す。In addition, as physical properties of the silicone conductive resin after curing, thermal conductivity and electrical resistivity were investigated using the following measurement methods. The results are shown in Table 3.
（圧縮応力）
縦１６ｍ５、横３８＋ｕ、高さ５−の金型で樹脂形成し
、内部に歪計を内蔵させ、成形後のキュア時間に対し歪
計に加わる力がどのように変化するのかを調べた。(Compressive stress) It is molded with resin in a mold measuring 16m5 long, 38+u wide, and 5-height, and has a built-in strain gauge inside.We investigated how the force applied to the strain gauge changes with the curing time after molding. Examined.
（熱伝導率）
ＪＩＳ Ａ １４１３に示された平板直接法にしたがっ
て測定した。なお、熱伝導率（λ）は次式にしたがって
求めた。(Thermal conductivity) Measured according to the flat plate direct method shown in JIS A 1413. Note that the thermal conductivity (λ) was determined according to the following formula.
λ（にｃａｌ／ｍ −ｈｏｕｒ−ｄｅｏ） −（Ｑ／２
Ａ）（４１／Δ０）（式中、Ｑは主Ｆニー−９（Ｄ発生
熱ｌ（０，８６Ｗ） 、Ａは主板の面積、１は試料厚さ
くｌ）、Δ０は試料の温度差である。）
（電気抵抗率）
ＪＩＳに６９１１の熱硬化性プラスチック一般試験方法
に従って試料片寸法が厚さ２■、直径１１００ｅの試料
を用いた。電極として黒鉛を用い、寸法２ｒｌは５０−
一として試料の体積抵抗Ｒｘ（Ω）を測定し、式、ｏｖ
−（Ａ／ｄ） −Ｒｘ （式中、Ａは試料の面積、ｄ
は試料の厚さである）から体積抵抗率を求めた。λ(nical/m -hour-deo) -(Q/2
A) (41/Δ0) (where Q is the main F knee-9 (D generated heat l (0,86W), A is the area of the main plate, 1 is the sample thickness l), and Δ0 is the temperature difference between the samples. (Electrical resistivity) A sample having a thickness of 2 cm and a diameter of 1100 mm was used in accordance with JIS 6911 General Test Methods for Thermosetting Plastics. Graphite is used as the electrode, and the dimension 2rl is 50-
The volume resistance Rx (Ω) of the sample is measured as one, and the formula, ov
-(A/d) -Rx (where A is the area of the sample, d
is the thickness of the sample).
［以下余白］
第 ３ 表
以上の結果から明らかなように、比較例１の従来のエポ
キシ導電性樹脂は、硬化１時間後のボストキュア時間を
延長しても、圧縮応力は１８００〜１９００Ｋｇ／ＣＩ
ｉと大きく、しがも変化せず、大きな圧縮応力を半導体
素子に加えつづけることになるのに対して、実施例１〜
７でえられた本発明のシリコーン導電性樹脂の硬化１時
間後の圧縮応力はボストキュア時間を延長しても、従来
のエポキシ導電性樹脂よりも約１７３小さいことがわか
る。さらに本発明のシリコーン導電性樹脂の電気抵抗率
および熱伝導率などは半導体素子の性能を左右する物性
に影響をおよぼすものではないことがわかる。[Margin below] Table 3 As is clear from the results above, the conventional epoxy conductive resin of Comparative Example 1 had a compressive stress of 1800 to 1900 Kg/CI even if the post curing time after curing was extended for 1 hour.
In contrast, in Examples 1-
It can be seen that the compressive stress of the silicone conductive resin of the present invention obtained in No. 7 after curing for 1 hour is about 173 smaller than that of the conventional epoxy conductive resin even if the post cure time is extended. Furthermore, it can be seen that the electrical resistivity, thermal conductivity, etc. of the silicone conductive resin of the present invention do not affect the physical properties that affect the performance of semiconductor devices.
［発明の効果］
以上のように、本発明のシリコーン導電性樹脂は硬化後
の圧縮応力が小さいので、半導体装置の不良発生を抑制
することができ、しかも導電担体としてカーボンが用い
られているので、えられる半導体装置の価格を低減する
ことができるとともに硬化時間を短縮することができる
という効果を奏する。[Effects of the Invention] As described above, the silicone conductive resin of the present invention has a small compressive stress after curing, so it is possible to suppress the occurrence of defects in semiconductor devices, and since carbon is used as a conductive carrier, it is possible to suppress the occurrence of defects in semiconductor devices. This has the effect that the cost of the semiconductor device obtained can be reduced and the curing time can be shortened.
第１図は従来の導電性樹脂が用いられた半導体装置の断
面図である。
（図面の符号）
（１）：半導体素子
（２）：リードフレームのダイアタッチエリア
（３）：リードフレームのリードフィンガー（４）：金
属細線
（５）：樹脂成形部
（６）：導電性樹脂FIG. 1 is a sectional view of a semiconductor device using a conventional conductive resin. (Symbols in drawings) (1): Semiconductor element (2): Die attach area of lead frame (3): Lead finger of lead frame (4): Fine metal wire (5): Resin molded part (6): Conductive resin
Claims (1)
ン導電性樹脂。(1) Silicone conductive resin consisting of silicone resin and carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6624487A JPS63230768A (en) | 1987-03-20 | 1987-03-20 | Electrically conductive silicone resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6624487A JPS63230768A (en) | 1987-03-20 | 1987-03-20 | Electrically conductive silicone resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63230768A true JPS63230768A (en) | 1988-09-27 |
Family
ID=13310260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6624487A Pending JPS63230768A (en) | 1987-03-20 | 1987-03-20 | Electrically conductive silicone resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63230768A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02163950A (en) * | 1988-12-16 | 1990-06-25 | Matsushita Electric Ind Co Ltd | Mounting of semiconductor device |
| JPH02219312A (en) * | 1989-02-20 | 1990-08-31 | Victor Co Of Japan Ltd | Crystal resonator |
| JPH0598241A (en) * | 1991-10-07 | 1993-04-20 | Shin Etsu Chem Co Ltd | Silicone rubber part fixed to substrate |
| JP2000109693A (en) * | 1998-10-07 | 2000-04-18 | Nok Corp | Ptc composition and plane heater |
| WO2017002489A1 (en) * | 2015-06-30 | 2017-01-05 | 信越化学工業株式会社 | Heat dissipation material |
| WO2018147010A1 (en) * | 2017-02-07 | 2018-08-16 | 信越化学工業株式会社 | Novel mesogen-silicon compound (co)polymer and thermoplastic elastomer |
-
1987
- 1987-03-20 JP JP6624487A patent/JPS63230768A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02163950A (en) * | 1988-12-16 | 1990-06-25 | Matsushita Electric Ind Co Ltd | Mounting of semiconductor device |
| JPH0666355B2 (en) * | 1988-12-16 | 1994-08-24 | 松下電器産業株式会社 | Semiconductor device mounting body and mounting method thereof |
| JPH02219312A (en) * | 1989-02-20 | 1990-08-31 | Victor Co Of Japan Ltd | Crystal resonator |
| JPH0598241A (en) * | 1991-10-07 | 1993-04-20 | Shin Etsu Chem Co Ltd | Silicone rubber part fixed to substrate |
| JP2000109693A (en) * | 1998-10-07 | 2000-04-18 | Nok Corp | Ptc composition and plane heater |
| WO2017002489A1 (en) * | 2015-06-30 | 2017-01-05 | 信越化学工業株式会社 | Heat dissipation material |
| JPWO2017002489A1 (en) * | 2015-06-30 | 2018-03-29 | 信越化学工業株式会社 | Heat dissipation material |
| EP3318593A4 (en) * | 2015-06-30 | 2019-02-13 | Shin-Etsu Chemical Co., Ltd. | Heat dissipation material |
| US10590322B2 (en) | 2015-06-30 | 2020-03-17 | Shin-Etsu Chemical Co., Ltd. | Heat dissipation material |
| WO2018147010A1 (en) * | 2017-02-07 | 2018-08-16 | 信越化学工業株式会社 | Novel mesogen-silicon compound (co)polymer and thermoplastic elastomer |
| JPWO2018147010A1 (en) * | 2017-02-07 | 2019-11-07 | 信越化学工業株式会社 | Novel mesogenic silicon compound (co) polymer and thermoplastic elastomer |
| US11142612B2 (en) | 2017-02-07 | 2021-10-12 | Shin-Etsu Chemical Co., Ltd. | Mesogen-silicon compound (co)polymer and thermoplastic elastomer |
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