JPS63229731A - Ultrasonic wedge bonder - Google Patents
Ultrasonic wedge bonderInfo
- Publication number
- JPS63229731A JPS63229731A JP62064676A JP6467687A JPS63229731A JP S63229731 A JPS63229731 A JP S63229731A JP 62064676 A JP62064676 A JP 62064676A JP 6467687 A JP6467687 A JP 6467687A JP S63229731 A JPS63229731 A JP S63229731A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- bonding
- microcomputer
- point
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims description 3
- 230000008602 contraction Effects 0.000 claims description 2
- 238000004364 calculation method Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000002950 deficient Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は超音波ウェッジボンダに関し、特に半導体装置
の製造における半導体素子へのボンディング接続を精度
よく実現する超音波ウェッジホンダに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ultrasonic wedge bonder, and more particularly to an ultrasonic wedge bonder that accurately realizes bonding to semiconductor elements in the manufacture of semiconductor devices.
従来のかかる超音波ウェッジホンダにおいては、作業者
が作業前に半導体素子の任意の点を目合せ点とし、その
位置をボンディングステージの回転中心としてＳＷ操作
により入力している。更に、前記ボンディングステージ
を実際に１８０゜回転させた時の目合せ点の位置を入力
することにより、マイクロコンピュータで計算し算出し
ている。In such a conventional ultrasonic wedge Honda, the operator sets an arbitrary point on the semiconductor element as an alignment point before working, and inputs that position as the rotation center of the bonding stage by operating the SW. Further, by inputting the position of the alignment point when the bonding stage is actually rotated by 180 degrees, the calculation is performed by a microcomputer.
しかしながら、上述した従来の回転中心の入力方法では
、ボンディングステージが取り付いている基板が周囲の
温度や装置内部の温度変化により伸縮した場合、回転中
心がボンディング作業中に変化しボンディング座標のず
れか生じ、半導体装置を不良にしたり、もしくは作業者
がボンディング作業を中断し再度回転中心の入力を行わ
なければならないという欠点がある。However, with the conventional input method for the center of rotation described above, if the board on which the bonding stage is attached expands or contracts due to changes in ambient temperature or temperature inside the device, the center of rotation changes during the bonding process, resulting in a shift in the bonding coordinates. However, there are disadvantages in that the semiconductor device may become defective, or the operator must interrupt the bonding operation and input the rotation center again.
本発明の目的は、ボンディング接続を行うにあたり、ボ
ンディング位置のずれに対する補正を容易にする超音波
ウェッジホンダを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an ultrasonic wedge Honda that facilitates correction of deviations in bonding positions when performing bonding connections.
本発明の超音波ウェッジボンダは、半導体素子とリード
フレームを載置するボンディングステージと、前記ボン
ディングステージを取付ける基板と、前記基板の温度変
化を検出する温度検出手段と、前記基板の温度変化によ
る伸縮により生ずる前記ボンディングステージの回転中
心のずれを識別し温度の変化に応じて自動的に計算・制
御する手段とを有し、温度補正を行って前記ずれに対す
る処理を行うように構成される。The ultrasonic wedge bonder of the present invention includes a bonding stage on which a semiconductor element and a lead frame are placed, a substrate on which the bonding stage is attached, a temperature detection means for detecting temperature changes in the substrate, and expansion and contraction due to temperature changes in the substrate. and a means for automatically calculating and controlling a shift in the center of rotation of the bonding stage caused by a change in temperature, and is configured to perform temperature correction to deal with the shift.
特に、温度検出手段には周囲の温度や装置内部の温度を
測定する温度センサを用い、またボンディングステージ
の回転中心のずれを計算・制御する手段には半導体素子
の任意の一点を認識する画像認識処理部とマイクロコン
ピュータとを用いている。In particular, the temperature detection means uses a temperature sensor that measures the ambient temperature and the temperature inside the device, and the means for calculating and controlling the shift in the center of rotation of the bonding stage uses image recognition that recognizes an arbitrary point on the semiconductor element. It uses a processing section and a microcomputer.
〔実施例〕
次に、本発明の実施例について図面を参照して説明する
。[Example] Next, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を説明するための超音波ウェ
ッジボンダのブロック構成図である。FIG. 1 is a block diagram of an ultrasonic wedge bonder for explaining one embodiment of the present invention.
第１図に示すように、本実施例の超音波ウェッジホンダ
は、半導体装置の半導体素子とリードフレームを回転さ
せながら一定方向にワイヤーボンディングする装置であ
り、基板１と、この基板１に取付けられ半導体装置６を
載置するボンディングステージ２と、基板１の温度変化
を検出する温度センサ３と、半導体装置６の位置づれを
カメラ７を通して画像処理する画像処理部４と、温度セ
ンサ３の出力および画像処理部４の出力により測定・計
算およびそれらを制御するマイクロコンピュータ５とを
含んで構成される。かかる超音波ウェッジボンダはボン
ディング作業中に装置内部の温度が変化すると温度セン
サ３が温度の変化をキャッチしそれをマイクロコンピュ
ータ５に伝える。このマイクロコンピュータ５が設定値
以上の温度変化を感知した場合には、ボンディングステ
ージ２上の半導体装置６の半導体素子の任意の一点を目
合せ点とする。次に、その点を画像認識処理部４で認識
し、その点の座標を記憶する。As shown in FIG. 1, the ultrasonic wedge Honda of this embodiment is a device that performs wire bonding in a fixed direction while rotating the semiconductor element and lead frame of a semiconductor device. A bonding stage 2 on which a semiconductor device 6 is placed, a temperature sensor 3 that detects temperature changes of the substrate 1, an image processing unit 4 that processes images of the positional deviation of the semiconductor device 6 through a camera 7, and an output of the temperature sensor 3 and It is configured to include measurements and calculations based on the output of the image processing section 4, and a microcomputer 5 that controls them. In such an ultrasonic wedge bonder, when the temperature inside the device changes during the bonding operation, the temperature sensor 3 detects the change in temperature and transmits it to the microcomputer 5. When the microcomputer 5 senses a temperature change greater than a set value, an arbitrary point on the semiconductor element of the semiconductor device 6 on the bonding stage 2 is set as an alignment point. Next, the point is recognized by the image recognition processing section 4, and the coordinates of the point are stored.
第２図は第１図に示したかかる半導体装置における半導
体素子部の拡大図である。FIG. 2 is an enlarged view of the semiconductor element portion of the semiconductor device shown in FIG. 1.
第２図に示すように、前記半導体装置６の半導体素子６
１の任意の一点、例えば電極パッド６２を目合せ点とし
、画像認識処理部４で認識したのち、座標（Ｘｒ 、Ｙ
ｌ）として記憶する。As shown in FIG. 2, the semiconductor element 6 of the semiconductor device 6
1, for example, the electrode pad 62, is recognized by the image recognition processing unit 4, and then the coordinates (Xr, Y
l).
次に、ボンディングステージ２を１８０°回転させく点
線図）、更に同じ目合せ点である電極パッド６２を認識
し、その点の座標（Ｘ２゜Ｙ２）を求める。これら座標
情報をマイクロコンピュータ５により演算し、回転中心
８の座標この回転中心８の座標を算出した後は、その値
を回転中心として以後のボンディング接続作業を続ける
。Next, the bonding stage 2 is rotated 180 degrees (dotted line diagram), and the electrode pad 62, which is the same alignment point, is recognized, and the coordinates (X2°Y2) of that point are determined. These coordinate information are calculated by the microcomputer 5 to calculate the coordinates of the rotation center 8. After the coordinates of the rotation center 8 are calculated, the subsequent bonding connection work is continued using the values as the rotation center.
本実施例では、このようにして基板１の温度が上昇して
も画像処理部４およびマイクロコンピュータ５の計算・
制御により容易に回転中心位置のずれ補正が可能になる
。In this embodiment, even if the temperature of the substrate 1 rises, the image processing section 4 and the microcomputer 5 can perform calculations.
Through control, it becomes possible to easily correct the deviation of the rotation center position.
以上説明したように、本発明の超音波ウェッジボンダは
経時的な装置内外の温度変化に対しセンサにより温度変
化を感知し常に正しい回転中心を自動的に実測算出する
ことにより、ボンディング装置のずれによる不良をなく
すとともに、作業者の工数を減少させることができる効
果がある。As explained above, the ultrasonic wedge bonder of the present invention uses a sensor to detect temperature changes inside and outside the device over time, and automatically measures and calculates the correct rotation center at all times. This has the effect of eliminating defects and reducing worker man-hours.
第１図は本発明の一実施例を説明するための超音波ウェ
ッジホンダのブロック構成図、第２図は第１図で説明し
た半導体装置における半導体素子部の拡大図である。
１・・・基板、２・・・ボンディングステージ、３・・
・温度センサ、４・・・画像認識処理部、５・・・マイ
クロコンピュータ、６・・・半導体装置、７・・・カメ
ラ、８・・・回転中心、６１・・・半導体素子、６２・
・・電極パッド。
第 Ｉ 苗
茅 ２ 図FIG. 1 is a block diagram of an ultrasonic wedge Honda for explaining one embodiment of the present invention, and FIG. 2 is an enlarged view of the semiconductor element portion of the semiconductor device described in FIG. 1. 1... Board, 2... Bonding stage, 3...
- Temperature sensor, 4... Image recognition processing unit, 5... Microcomputer, 6... Semiconductor device, 7... Camera, 8... Rotation center, 61... Semiconductor element, 62.
...Electrode pad. Part I Miao 2 Figure
Claims (1)
向にワイヤボンディングを行なう超音波ウェッジボンダ
に於て、前記半導体素子と前記リードフレームを載置す
るボンディングステージと、前記ボンディングステージ
を取付ける基板と、前記基板の温度変化を検出する温度
検出手段と、前記基板の温度変化による伸縮により生ず
る前記ボンディングステージの回転中心のずれを識別し
温度の変化に応じ自動的に計算・制御する手段とを有し
、温度補正を行って前記ずれに対する処理を行うことを
特徴とする超音波ウェッジボンダ。An ultrasonic wedge bonder that performs wire bonding in a fixed direction while rotating a semiconductor element and a lead frame includes a bonding stage on which the semiconductor element and the lead frame are placed, a substrate on which the bonding stage is attached, and a substrate on which the semiconductor element and the lead frame are mounted. Temperature detection means for detecting temperature changes, and means for identifying deviations in the center of rotation of the bonding stage caused by expansion and contraction of the substrate due to temperature changes, and automatically calculating and controlling according to temperature changes, and temperature correction. An ultrasonic wedge bonder characterized in that the deviation is treated by performing the following steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62064676A JP2643937B2 (en) | 1987-03-18 | 1987-03-18 | Ultrasonic wet bonder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62064676A JP2643937B2 (en) | 1987-03-18 | 1987-03-18 | Ultrasonic wet bonder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229731A true JPS63229731A (en) | 1988-09-26 |
| JP2643937B2 JP2643937B2 (en) | 1997-08-25 |
Family
ID=13265011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62064676A Expired - Lifetime JP2643937B2 (en) | 1987-03-18 | 1987-03-18 | Ultrasonic wet bonder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2643937B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103350A (en) * | 1983-09-21 | 1984-06-14 | Hitachi Ltd | Bonding device |
| JPS61272943A (en) * | 1985-05-28 | 1986-12-03 | Nec Corp | Wire bonding device |
-
1987
- 1987-03-18 JP JP62064676A patent/JP2643937B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103350A (en) * | 1983-09-21 | 1984-06-14 | Hitachi Ltd | Bonding device |
| JPS61272943A (en) * | 1985-05-28 | 1986-12-03 | Nec Corp | Wire bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2643937B2 (en) | 1997-08-25 |
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