JPS6322298B2 - - Google Patents
Info
- Publication number
- JPS6322298B2 JPS6322298B2 JP2872181A JP2872181A JPS6322298B2 JP S6322298 B2 JPS6322298 B2 JP S6322298B2 JP 2872181 A JP2872181 A JP 2872181A JP 2872181 A JP2872181 A JP 2872181A JP S6322298 B2 JPS6322298 B2 JP S6322298B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- photomask
- etching
- electron beam
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910020203 CeO Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 20
- 230000007547 defect Effects 0.000 description 17
- 230000005611 electricity Effects 0.000 description 16
- 230000003068 static effect Effects 0.000 description 16
- 238000012360 testing method Methods 0.000 description 16
- 239000011651 chromium Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000007738 vacuum evaporation Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000019988 mead Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
本発明はフオトマスクに係り、更に詳しくはハ
ードマスクと一般に呼ばれる透明性基板表面に金
属薄膜、又はそれに代る遮光性物質薄膜を蒸着又
はスパツタによつて設け、フオトエツチングによ
り前記薄膜の不要部を除去して、前記薄膜からな
るIC、LSI等用のパターンを形成してなるフオト
マスクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask, and more specifically, a thin metal film, or a thin film of a light-shielding material in place of it, is provided on the surface of a transparent substrate, generally called a hard mask, by vapor deposition or sputtering, and then photoetching is performed. The present invention relates to a photomask in which an unnecessary portion of the thin film is removed to form a pattern for IC, LSI, etc. made of the thin film.
フオトマスクとしては従来から銀乳剤を用いた
エマルジヨンマスクの他耐久性の優れたクロムマ
スク、低反射クロムマスク、両面低反射クロムマ
スク、酸化クロムマスク、シリコンマスク、酸化
鉄マスク等いわゆるハードマスクが用いられてい
る。さらに近年ではこれらハードマスクに画像形
成後も導電性のある導電性ハードマスクも用いら
れ始めている。この導電性マスクは静電気の帯電
一放電によるパターン欠陥の発生や静電気による
ゴミの付着の減少、又遮光膜が非導電性の場合で
も電子ビームによる露光が可能であり電子ビーム
システムにより寸法測定やマスクのレジストレー
シヨンの評価等に利用出来るという利点を有して
いる。しかしこの導電性薄膜は一般に耐薬品性が
弱いものが多くフオトマスクを通常マスク洗浄に
用いられている酸、アルカリ等で何回もくり返し
洗浄されると導電性部分が破壊され導電性マスク
としての機能を失うだけでなく、導電性薄膜の破
壊とともに遮光用薄膜までも破壊されフオトマス
クとしての機能までも失つてしまうという欠点を
有している。又この導電性薄膜は一般に表面硬度
が小さく、せつかく表面硬度の大きいハードマス
クを使用しているにもかかわらず、マスク全体の
強度は導電性薄膜の表面強度によつて決まる耐久
性しか得られないことになるため特に密着焼付に
使用するフオトマスクの耐久性は小さくなつてし
まう欠点がある。 Traditionally, photomasks include emulsion masks using silver emulsion, as well as so-called hard masks such as highly durable chrome masks, low-reflection chrome masks, double-sided low-reflection chrome masks, chrome oxide masks, silicon masks, and iron oxide masks. It is being Furthermore, in recent years, conductive hard masks that remain conductive even after image formation have begun to be used. This conductive mask reduces the occurrence of pattern defects due to electrostatic charging and discharge, and reduces the adhesion of dust due to static electricity.Even if the light-shielding film is non-conductive, it is possible to perform exposure with an electron beam, and the electron beam system can be used to measure dimensions and mask. It has the advantage that it can be used for evaluation of registration, etc. However, this conductive thin film generally has weak chemical resistance, and if a photomask is repeatedly cleaned with acids, alkalis, etc. that are normally used for mask cleaning, the conductive parts will be destroyed and the function as a conductive mask will be lost. It has the disadvantage that not only the conductive thin film is destroyed, but also the light-shielding thin film is destroyed, and the function as a photomask is also lost. In addition, this conductive thin film generally has a low surface hardness, and even though a hard mask with a high surface hardness is used, the strength of the entire mask is only as durable as the surface strength of the conductive thin film. Therefore, there is a disadvantage that the durability of the photomask especially used for contact printing is reduced.
また導電性薄膜単体では耐薬品性の強いもので
も、この導電性薄膜と遮光用薄膜が直接接触する
ことによりその部分がある種の薬品に対して耐薬
品性を失つてしまうこともある。 Furthermore, even if the conductive thin film alone has strong chemical resistance, direct contact between the conductive thin film and the light-shielding thin film may cause that portion to lose its chemical resistance to certain chemicals.
本発明者は叙上の欠点を解消したフオトマスク
を開発すべく研究の結果、透明基板上にMo、
Ta、Nb、Ti、Cr、Ｖ、Ｗ、Zr、Au、In2O3、及
びSnO2からなる群から選択される材料よりなる
透明性を有する導電性薄膜、及びAl2O3、CaO、
MgO、SiO2、CeO2、及びTiO2からなる群から選
択される材料よりなる透明性を有する耐薬品性保
護膜を順次積層し、更にその上にCr、Cr2O3、
Si、Ta、Ta2O5、及びFe2O3からなる群から選択
される材料よりなる遮光性薄膜からなるマスクパ
ターンを設けてなるフオトマスクはパターン焼付
時の静電気によるシリコンウエーハ素子の破壊及
びフオトマスクのパターン欠陥の発生を防止する
に充分な耐電防止機能を備え、又、電子ビームシ
ステムによる寸法測定、及びレジストレーシヨン
の評価が可能であり、且つ使用中、反復して強い
薬品で洗浄処理することができることを見い出
し、かかる知見にもとづいて本発明を完成したも
のである。 As a result of research to develop a photomask that eliminates the above-mentioned drawbacks, the present inventor discovered that Mo,
A transparent conductive thin film made of a material selected from the group consisting of Ta, Nb, Ti, Cr, V, W, Zr, Au, In 2 O 3 and SnO 2 , and Al 2 O 3 , CaO,
A transparent chemical-resistant protective film made of a material selected from the group consisting of MgO, SiO 2 , CeO 2 , and TiO 2 is sequentially laminated, and then Cr, Cr 2 O 3 ,
A photomask that is provided with a mask pattern made of a light-shielding thin film made of a material selected from the group consisting of Si, Ta, Ta 2 O 5 and Fe 2 O 3 can be used to prevent destruction of silicon wafer elements due to static electricity during pattern printing and the photomask. It has sufficient anti-electrostatic properties to prevent the occurrence of pattern defects, allows dimension measurement and registration evaluation using an electron beam system, and is repeatedly cleaned with strong chemicals during use. The present invention was completed based on this knowledge.
即ち、本発明の要旨は透明基板上にMo、Ta、
Nb、Ti、Cr、Ｖ、Ｗ、Zr、Au、In2O3、及び
SnO2からなる群から選択される材料よりなる透
明性を有する導電性薄膜、及びAl2O3、CaO、
MgO、SiO2、CeO2、及びTiO2からなる群から選
択される材料よりなる透明性を有する耐薬品性保
護膜が順次積層され、前記耐薬品性保護膜上に
Cr、Cr2O3、Si、Ta、Ta2O5、及びFe2O3からな
る群から選択される材料よりなる遮光性薄膜から
なるマスクパターンが設けられていることを特徴
とするフオトマスクである。 That is, the gist of the present invention is that Mo, Ta,
Nb, Ti, Cr, V, W, Zr, Au, In 2 O 3 and
A transparent conductive thin film made of a material selected from the group consisting of SnO 2 , Al 2 O 3 , CaO,
A transparent chemical-resistant protective film made of a material selected from the group consisting of MgO, SiO 2 , CeO 2 , and TiO 2 is sequentially laminated on the chemical-resistant protective film.
A photomask comprising a mask pattern made of a light-shielding thin film made of a material selected from the group consisting of Cr, Cr 2 O 3 , Si, Ta, Ta 2 O 5 and Fe 2 O 3 . be.
以下、本発明につき図面を参照しながら詳細に
説明する。 Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は本発明に係るフオトマスク５を示す。 FIG. 1 shows a photomask 5 according to the invention.
透明基板１上に透明性を有する導電性薄膜２、
透明性を有する耐薬品性保護膜３、及び遮光性薄
膜からなるマスクパターン４が順次積層されてい
る。 a transparent conductive thin film 2 on a transparent substrate 1;
A transparent chemical-resistant protective film 3 and a mask pattern 4 made of a light-shielding thin film are sequentially laminated.
而して、本発明のフオトマスクにおいて、透明
基板としては例えばソーダライムガラス、石英ガ
ラス、サフアイヤ等の光学的に透明な任意材料か
らなるものを適用でき、その厚みには本質的な制
約はないが通常0.2〜６mmのものが用いられる。 In the photomask of the present invention, the transparent substrate may be made of any optically transparent material such as soda lime glass, quartz glass, sapphire, etc., and there are no essential restrictions on its thickness. Usually 0.2 to 6 mm is used.
次に透明性を有する導電性薄膜としてはMo、
Ta、Nb、Ti、Cr、Ｖ、Ｗ、Zr、Au、In2O3、及
びSnO2からなる群から選択される材料の一種も
しくは二種以上よりなるものを適用できる。この
薄膜としては、波長200〜600nｍの光に対して60
％以上の光透過率を有し、且つ10KΩ／□以下の
面積抵抗を有するものが望ましい。 Next, as a transparent conductive thin film, Mo,
One or more materials selected from the group consisting of Ta, Nb, Ti, Cr, V, W, Zr, Au, In 2 O 3 and SnO 2 can be used. This thin film has a 60%
% or more and a sheet resistance of 10 KΩ/□ or less.
又、この薄膜の厚みは10ないし1000Åであるこ
とが好ましい。 Further, the thickness of this thin film is preferably 10 to 1000 Å.
次に透明性を有する耐薬品性保護膜としては
Al2O3、CaO、MgO、SiO2、CeO2、及びTiO2か
らなる群から選択される材料よりなるものを適用
できる。この薄膜は波長200〜600nｍの光に対し
て80％以上の光透過率を有するものが望ましい。
この薄膜は耐薬品性に富み、前記導電性薄膜を保
護し、酸、アルカリ等による洗浄処理の反復によ
る導電性薄膜の破壊を防止する機能を果す。 Next, as a transparent chemical-resistant protective film,
A material selected from the group consisting of Al 2 O 3 , CaO, MgO, SiO 2 , CeO 2 and TiO 2 can be applied. This thin film preferably has a light transmittance of 80% or more for light having a wavelength of 200 to 600 nm.
This thin film has high chemical resistance and functions to protect the conductive thin film and prevent destruction of the conductive thin film due to repeated cleaning treatments with acids, alkalis, etc.
且つ、この薄膜はガラス等の透明基板から折出
するNaイオンの遮光性薄膜への悪影響を防ぐの
に充分なバリヤー機能をも果す。この薄膜の厚み
は10ないし1000Åであることが好ましい。 In addition, this thin film also performs a sufficient barrier function to prevent Na ions ejected from a transparent substrate such as glass from having an adverse effect on the light-shielding thin film. The thickness of this thin film is preferably 10 to 1000 Å.
次にマスクパターンを形成する遮光性薄膜とし
てはCr、Cr2O3、Si、Ta、Ta2O5、及びFe2O3か
らなる群から選択される１種もしくは２種以上の
材料よりなるものを適用し得る。 Next, the light-shielding thin film forming the mask pattern is made of one or more materials selected from the group consisting of Cr, Cr2O3 , Si, Ta, Ta2O5 , and Fe2O3 . things can be applied.
又、この薄膜としては例えばクロム表面に酸化
クロム膜を積層したものの如き積層体を用いても
良い。 Further, as this thin film, a laminate such as a chromium oxide film laminated on a chromium surface may be used.
マスクパターンとしては遮光性薄膜をウエツト
エツチングしてなるもの、又はドライエツチング
してなるもののいずれをも適用し得る。 The mask pattern may be formed by wet etching or dry etching a light shielding thin film.
本発明のフオトマスクは導電性薄膜を有するの
でパターン焼付時の静電気によるシリコンウエー
ハ素子の破壊及びフオトマスクのパターン欠陥の
発生を防止するに充分な導電性を有し、又、導電
性薄膜は耐薬品性保護膜で表面保護されているの
で、酸、アルカリ等による洗浄処理を反復して受
けてもそれによつて損なわれることはない。又、
電子ビームシステムによる寸法測定、及びレジス
トレーシヨンの評価が可能である。 Since the photomask of the present invention has a conductive thin film, it has sufficient conductivity to prevent destruction of silicon wafer elements and generation of photomask pattern defects due to static electricity during pattern printing, and the conductive thin film has chemical resistance. Since the surface is protected by a protective film, it will not be damaged even if it is repeatedly subjected to cleaning treatment with acids, alkalis, etc. or,
It is possible to measure dimensions and evaluate registration using an electron beam system.
以上、詳記した通り、本発明のフオトマスク
は、パターン焼付時の静電気によるシリコンウエ
ーハ素子の破壊及びフオトマスクのパターン欠陥
の発生を防止するに充分な導電性を有し、且つ耐
薬品性に富み、又、電子ビームシステムによる寸
法測定、及びレジストレーシヨンの評価が可能で
ある利点を有する。 As detailed above, the photomask of the present invention has sufficient conductivity to prevent damage to silicon wafer elements and generation of photomask pattern defects due to static electricity during pattern printing, and is highly chemical resistant. It also has the advantage of being able to measure dimensions and evaluate registration using an electron beam system.
次に、実施例をあげて本発明につき、具体的に
説明する。 Next, the present invention will be specifically explained with reference to Examples.
実施例 １
ガラス板上に電子ビーム加熱式真空蒸着法によ
りTaを膜厚50Åに被着し、更に、その上に電子
ビーム加熱式真空蒸着法によりSiO2を膜厚200Å
に被着し、更にその上に電子ビーム加熱式真空蒸
着法によりCr薄膜を膜厚1000Åに形成してフオ
トマスクブランク板を得た。Example 1 Ta was deposited on a glass plate to a thickness of 50 Å by electron beam heating vacuum evaporation, and then SiO 2 was deposited to a thickness of 200 Å by electron beam heating vacuum evaporation.
A photomask blank plate was obtained by depositing a Cr thin film on the film to a thickness of 1000 Å using an electron beam heating vacuum evaporation method.
上記の如くして得たブランク板のCr薄膜上に
レジスト（AZ−1350、シプレー社製）をコーテ
イングし、次いで露光現像してレジストパターン
を形成後、下記組成のエツチング液を用いて、液
温20℃で40秒間エツチングして露出しているCr
薄膜部分を除去して所望のフオトマスクを得た。 A resist (AZ-1350, manufactured by Shipley Co., Ltd.) was coated on the Cr thin film of the blank plate obtained as described above, and then exposed and developed to form a resist pattern. Cr exposed by etching at 20℃ for 40 seconds
The desired photomask was obtained by removing the thin film portion.
（NH4）2Ce（NO3）6 165.0ｇ
HClO4（70％） 43.0ml
純 水 1000ml
このようにして得られたフオトマスク10枚につ
いて耐久試験を行つた。
(NH 4 ) 2 Ce(NO 3 ) 6 165.0 g HClO 4 (70%) 43.0 ml Pure water 1000 ml A durability test was conducted on the 10 photomasks thus obtained.
耐薬品性の試験は濃硫酸に過酸化水素水（30％
水溶液）を20容積％混合し、110℃に加熱した溶
液中にフオトマスクを60分間浸漬することにより
行なつたが、導電性薄膜には何らの欠陥も生ぜ
ず、又、導電率の変化もみられなかつた。 Chemical resistance tests were conducted using concentrated sulfuric acid and hydrogen peroxide (30%).
The photomask was immersed for 60 minutes in a solution of 20% by volume of aqueous solution) heated to 110°C, but no defects were observed in the conductive thin film, and no change in conductivity was observed. Nakatsuta.
又、静電気に対する試験を、温度22℃、湿度40
％の雰囲気中で銀乳剤被膜をもつたフオトマスク
ブランク板へのパターン転写を100回行つたが、
フオトマスクの欠陥は何ら発生しなかつた。 In addition, we conducted tests against static electricity at a temperature of 22°C and a humidity of 40°C.
The pattern was transferred 100 times to a photomask blank plate with a silver emulsion coating in an atmosphere of
No photomask defects occurred.
実施例 ２
ガラス板上に電子ビーム加熱式真空蒸着法によ
りTaを膜厚50Åに被着し、更にその上に電子ビ
ーム加熱式真空蒸着法によりSiO2を膜厚200Åに
被着し、更にその上に電子ビーム加熱式真空蒸着
法によりSi薄膜を膜厚1000Aに形成してフオトマ
スクブランク板を得た。Example 2 Ta was deposited on a glass plate to a thickness of 50 Å by electron beam heating vacuum evaporation, and then SiO 2 was deposited to a thickness of 200 Å by electron beam heating vacuum evaporation. A Si thin film was formed thereon to a thickness of 1000 Å using an electron beam heating vacuum evaporation method to obtain a photomask blank plate.
上記の如くして得たブランク板のSi薄膜上に電
子線レジスト（COP、ミードケミカル社製）を
コーテイングし、次いで電子線露光及び現像を行
なつてレジストパターンを形成後、下記組成のエ
ツチング液を用い液温20℃で２分間エツチングし
て露出しているSi薄膜部分を除去して所望のフオ
トマスクを得た。 An electron beam resist (COP, manufactured by Mead Chemical Co., Ltd.) was coated on the Si thin film of the blank plate obtained as described above, and then exposed to electron beam and developed to form a resist pattern, and then etched with an etching solution of the following composition. The exposed Si thin film portion was removed by etching for 2 minutes at a liquid temperature of 20° C. to obtain a desired photomask.
（エツチング液の組成）
AgNO3 1.0ｇ
NH4F 0.5ｇ
HNO3 100ml
純 水 100ml
このようにして得られたフオトマスク10枚につ
いて耐久試験を行つた。(Composition of etching solution) AgNO 3 1.0 g NH 4 F 0.5 g HNO 3 100 ml Pure water 100 ml A durability test was conducted on 10 photomasks thus obtained.
耐薬品性の試験は濃硫酸に過酸化水素（30％水
溶液）を20容積％混合し、110℃に加熱した溶液
中にフオトマスクを60分間浸漬することにより行
なつたが、導電性薄膜には何らの欠陥も生せず、
又、導電率の変化もみられなかつた。 The chemical resistance test was conducted by immersing the photomask in a solution of 20% by volume of hydrogen peroxide (30% aqueous solution) heated to 110°C in concentrated sulfuric acid. without any defects,
Further, no change in electrical conductivity was observed.
又、静電気に対する試験を温度22℃、湿度40％
の雰囲気中で銀乳剤被膜をもつたフオトマスクブ
ランク板へのパターン転写を100回行つたが、フ
オトマスクの欠陥は何ら発生しなかつた。 In addition, static electricity tests were conducted at a temperature of 22°C and a humidity of 40%.
The pattern was transferred to a photomask blank plate with a silver emulsion coating 100 times in an atmosphere of
又、上記の如くして得たフオトマスクに対して
は電子線を用いたマスクのレジストレーシヨンの
測定を精度良く行なうことができた。 Furthermore, for the photomask obtained as described above, the registration of the mask could be measured with high accuracy using an electron beam.
実施例 ３
実施例１におけるブランク板のCr薄膜の一部
を、ドライエツチング法により、エツチングガス
としてCCl4と空気の混合ガスを用い、且つガス
圧0.3Torr、印加高周波電力200W、エツチング
時間５分間のエツチング条件でエツチング除去し
て所望のフオトマスクを得た。Example 3 A part of the Cr thin film of the blank plate in Example 1 was etched by dry etching using a mixed gas of CCl 4 and air as the etching gas, gas pressure 0.3 Torr, applied high frequency power 200 W, etching time 5 minutes. The desired photomask was obtained by etching and removing the photomask under the following etching conditions.
このようにして得られたフオトマスク10枚につ
いて実施例１の場合と同様にして耐久試験及び静
電気に対する試験を行つた。 Ten photomasks thus obtained were subjected to durability tests and static electricity tests in the same manner as in Example 1.
その結果、導電性薄膜には何らの欠陥も生ぜ
ず、又、動電率の変化もみられなかつた。又、静
電気によつて生ずる欠陥も何らみられなかつた。 As a result, no defects were produced in the conductive thin film, and no change in electrokinetic rate was observed. Further, no defects caused by static electricity were observed.
実施例 ４
ガラス板上に電子ビーム加熱式真空蒸着法によ
りCrを膜厚50Åに被着し、更にその上に電子ビ
ーム加熱式真空蒸着法によりSiO2を膜厚200Åに
被着し、更にその上に電子ビーム加熱式真空蒸着
法によりTa薄膜を膜厚1000Åに形成してフオト
マスクブランク板を得た。Example 4 Cr was deposited on a glass plate to a thickness of 50 Å by electron beam heating vacuum evaporation, and then SiO 2 was deposited to a thickness of 200 Å by electron beam heating vacuum evaporation. A Ta thin film was formed thereon to a thickness of 1000 Å by electron beam heating vacuum evaporation to obtain a photomask blank plate.
上記の如くして得たブランク板のTa薄膜の一
部を、ドライエツチング法により、エツチングガ
スとしてCF4を用い、且つガス圧0.01Torr、印加
高周波電力300W、エツチング時間２分間のエツ
チング条件でエツチング除去して所望のフオトマ
スクを得た。 A part of the Ta thin film on the blank plate obtained as described above was etched by a dry etching method using CF 4 as an etching gas under the conditions of gas pressure 0.01 Torr, applied high frequency power 300 W, and etching time 2 minutes. It was removed to obtain the desired photomask.
このようにして得られたフオトマスク10枚につ
いて実施例１の場合と同様にして耐久試験及び静
電気に対する試験を行つた。 Ten photomasks thus obtained were subjected to durability tests and static electricity tests in the same manner as in Example 1.
その結果、導電性薄膜には何らの欠陥も生ぜ
ず、又、導電率の変化もみられなかつた。又、静
電気によつて生ずる欠陥も何らみられなかつた。 As a result, no defects were produced in the conductive thin film, and no change in conductivity was observed. Further, no defects caused by static electricity were observed.
実施例 ５
実施例２におけるブランク板のSi薄膜の一部
を、ドライエツチング法により、エツチングガス
としてCCl4ガスを用い、且つ、ガス圧0.02Torr、
印加高周波電力250W、エツチング時間１分間の
エツチング条件でエツチング除去して所望のフオ
トマスクを得た。Example 5 A part of the Si thin film of the blank plate in Example 2 was dry etched using CCl 4 gas as the etching gas and at a gas pressure of 0.02 Torr.
The desired photomask was obtained by etching and removing under the etching conditions of an applied high frequency power of 250 W and an etching time of 1 minute.
このようにして得られたフオトマスク10枚につ
いて実施例１の場合と同様にして耐久試験及び静
電気に対する試験を行つた。 Ten photomasks thus obtained were subjected to durability tests and static electricity tests in the same manner as in Example 1.
その結果、導電性薄膜には何らの欠陥も生ぜ
ず、又、導電率の変化もみられなかつた。又、静
電気によつて生ずる欠陥も何らみられなかつた。 As a result, no defects were produced in the conductive thin film, and no change in conductivity was observed. Further, no defects caused by static electricity were observed.
実施例 ６
ガラス板上に電子ビーム加熱式真空蒸着法によ
りCrを膜厚50Åに被着し、更にその上に電子ビ
ーム加熱式真空蒸着法によりSiO2を膜厚200Åに
被着し、更にその上に電子ビーム加熱式真空蒸着
法によりSi薄膜を膜厚1000Åに形成してフオトマ
スクブランク板を得た。Example 6 Cr was deposited to a thickness of 50 Å on a glass plate by electron beam heating vacuum evaporation, and then SiO 2 was deposited to a thickness of 200 Å by electron beam heating vacuum evaporation. A Si thin film was formed thereon to a thickness of 1000 Å by electron beam heating vacuum evaporation to obtain a photomask blank plate.
上記の如くして得たブランク板のSi薄膜の一部
を実施例２の場合と同様にしてエツチング除去し
て所望のフオトマスクを得た。 A portion of the Si thin film of the blank plate obtained as described above was removed by etching in the same manner as in Example 2 to obtain a desired photomask.
このようにして得られたフオトマスク10枚につ
いて実施例１の場合と同様にして耐久試験及び静
電気に対する試験を行つた。 Ten photomasks thus obtained were subjected to durability tests and static electricity tests in the same manner as in Example 1.
その結果、導電性薄膜には何らの欠陥も生ぜ
ず、又、導電率の変化もみられなかつた。又、静
電気によつて生ずる欠陥も何らみられなかつた。 As a result, no defects were produced in the conductive thin film, and no change in conductivity was observed. Further, no defects caused by static electricity were observed.
実施例 ７
実施例６におけるブランク板のSi薄膜の一部
を、ドライエツチング法により、エツチングガス
としてCCl4ガスを用い、且つ、ガス圧0.02Torr、
印加高周波電力250W、エツチング時間１分間の
エツチング条件でエツチング除去して所望のフオ
トマスクを得た。Example 7 A part of the Si thin film of the blank plate in Example 6 was dry etched using CCl 4 gas as the etching gas and at a gas pressure of 0.02 Torr.
The desired photomask was obtained by etching and removing under the etching conditions of an applied high frequency power of 250 W and an etching time of 1 minute.
このようにして得られたフオトマスク10枚につ
いて実施例１の場合と同様にして耐久試験及び静
電気に対する試験を行つた。 Ten photomasks thus obtained were subjected to durability tests and static electricity tests in the same manner as in Example 1.
その結果、導電性薄膜には何らの欠陥も生ぜ
ず、又、導電率の変化もみられなかつた。又、静
電気によつて生ずる欠陥も何らみられなかつた。 As a result, no defects were produced in the conductive thin film, and no change in conductivity was observed. Further, no defects caused by static electricity were observed.
第１図は本発明のフオトマスクの断面図であ
る。
１……透明基板、２……透明性を有する導電性
薄膜、３……透明性を有する耐薬品性保護膜、４
……マスクパターン。
FIG. 1 is a sectional view of a photomask according to the present invention. 1... Transparent substrate, 2... Transparent conductive thin film, 3... Transparent chemical-resistant protective film, 4
...Mask pattern.
Claims (1)
Au、In2O3、及びSnO2からなる群から選択され
る材料よりなる透明性を有する導電性薄膜、及び
Al2O3、CaO、MgO、SiO2、CeO2、及びTiO2か
らなる群から選択される材料よりなる透明性を有
する耐薬品性保護膜が順次積層され、前記耐薬品
性保護膜上にCr、Cr2O3、Si、Ta、Ta2O5、及び
Fe2O3からなる群から選択される材料よりなる遮
光性薄膜からなり、かつ前記遮光膜はエツチング
により不要部分を除去して所定のマスクパターン
が設けられていることを特徴とするフオトマス
ク。1 Mo, Nb, Ti, V, W, Zr, on a transparent substrate
a transparent conductive thin film made of a material selected from the group consisting of Au, In 2 O 3 and SnO 2 ;
A transparent chemical-resistant protective film made of a material selected from the group consisting of Al 2 O 3 , CaO, MgO, SiO 2 , CeO 2 , and TiO 2 is sequentially laminated on the chemical-resistant protective film. Cr, Cr 2 O 3 , Si, Ta, Ta 2 O 5 , and
1. A photomask comprising a light-shielding thin film made of a material selected from the group consisting of Fe 2 O 3 , and wherein the light-shielding film is provided with a predetermined mask pattern by removing unnecessary portions by etching.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2872181A JPS57144549A (en) | 1981-02-28 | 1981-02-28 | Photomask |
| EP81107702A EP0049799B1 (en) | 1980-10-09 | 1981-09-28 | Photomask blank and photomask |
| DE8181107702T DE3173769D1 (en) | 1980-10-09 | 1981-09-28 | Photomask blank and photomask |
| US06/318,201 US4440841A (en) | 1981-02-28 | 1981-11-04 | Photomask and photomask blank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2872181A JPS57144549A (en) | 1981-02-28 | 1981-02-28 | Photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57144549A JPS57144549A (en) | 1982-09-07 |
| JPS6322298B2 true JPS6322298B2 (en) | 1988-05-11 |
Family
ID=12256296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2872181A Granted JPS57144549A (en) | 1980-10-09 | 1981-02-28 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57144549A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57182740A (en) * | 1981-05-07 | 1982-11-10 | Dainippon Printing Co Ltd | Photomask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
| JPS5446479A (en) * | 1977-09-20 | 1979-04-12 | Mitsubishi Electric Corp | Negative plate for photo mask |
| JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
-
1981
- 1981-02-28 JP JP2872181A patent/JPS57144549A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
| JPS5446479A (en) * | 1977-09-20 | 1979-04-12 | Mitsubishi Electric Corp | Negative plate for photo mask |
| JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57144549A (en) | 1982-09-07 |
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