JPS57182740A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS57182740A JPS57182740A JP6869381A JP6869381A JPS57182740A JP S57182740 A JPS57182740 A JP S57182740A JP 6869381 A JP6869381 A JP 6869381A JP 6869381 A JP6869381 A JP 6869381A JP S57182740 A JPS57182740 A JP S57182740A
- Authority
- JP
- Japan
- Prior art keywords
- material selected
- mask
- static electricity
- layer
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To raise durability without causing defects due to static electricity, by providing a protective layer between a conductive layer and a mask. CONSTITUTION:A transparent conductive thin film layer 2 made of a material selected from Mo, Ta, Nb, Ti, Cr, V, W, Zr, Au, In2O3, and SnO2; a transparent protective layer 3, resistant to chemicals, made of a material selected from Al2O3, CaO, MgO, SiO2, CeO2, and TiO2; and a mask 4 formed into a pattern made of a material selected from Cr, Cr2O3, Si, Ta2O3, Ta, and Fe2O3 are successively formed on a transparent substrate 1, thus permitting the conductive film layer 2 to be made hardly destructible, the maks 4 to be made easily washable, and durable without causing defects due to conductivity change and static electricity.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6869381A JPS57182740A (en) | 1981-05-07 | 1981-05-07 | Photomask |
DE8181107702T DE3173769D1 (en) | 1980-10-09 | 1981-09-28 | Photomask blank and photomask |
EP81107702A EP0049799B1 (en) | 1980-10-09 | 1981-09-28 | Photomask blank and photomask |
US06/318,201 US4440841A (en) | 1981-02-28 | 1981-11-04 | Photomask and photomask blank |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6869381A JPS57182740A (en) | 1981-05-07 | 1981-05-07 | Photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57182740A true JPS57182740A (en) | 1982-11-10 |
JPS6322300B2 JPS6322300B2 (en) | 1988-05-11 |
Family
ID=13381089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6869381A Granted JPS57182740A (en) | 1980-10-09 | 1981-05-07 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57182740A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH032756A (en) * | 1989-05-30 | 1991-01-09 | Hoya Corp | Photomask blank and photomask |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4953039A (en) * | 1972-06-20 | 1974-05-23 | ||
JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
JPS5444479A (en) * | 1977-09-12 | 1979-04-07 | Ibm | Sealed cooler |
JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
JPS57144549A (en) * | 1981-02-28 | 1982-09-07 | Dainippon Printing Co Ltd | Photomask |
-
1981
- 1981-05-07 JP JP6869381A patent/JPS57182740A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4953039A (en) * | 1972-06-20 | 1974-05-23 | ||
JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
JPS5444479A (en) * | 1977-09-12 | 1979-04-07 | Ibm | Sealed cooler |
JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
JPS57144549A (en) * | 1981-02-28 | 1982-09-07 | Dainippon Printing Co Ltd | Photomask |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH032756A (en) * | 1989-05-30 | 1991-01-09 | Hoya Corp | Photomask blank and photomask |
Also Published As
Publication number | Publication date |
---|---|
JPS6322300B2 (en) | 1988-05-11 |
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