JPS6322075B2 - - Google Patents

Info

Publication number
JPS6322075B2
JPS6322075B2 JP55031812A JP3181280A JPS6322075B2 JP S6322075 B2 JPS6322075 B2 JP S6322075B2 JP 55031812 A JP55031812 A JP 55031812A JP 3181280 A JP3181280 A JP 3181280A JP S6322075 B2 JPS6322075 B2 JP S6322075B2
Authority
JP
Japan
Prior art keywords
film
gas
solid
oxygen
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55031812A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56129379A (en
Inventor
Shinichiro Ishihara
Tsuneo Tanaka
Seiichi Nagata
Koshiro Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3181280A priority Critical patent/JPS56129379A/ja
Priority to EP81100992A priority patent/EP0035146B1/en
Priority to DE8181100992T priority patent/DE3176910D1/de
Publication of JPS56129379A publication Critical patent/JPS56129379A/ja
Publication of JPS6322075B2 publication Critical patent/JPS6322075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP3181280A 1980-02-15 1980-03-12 Solid image-pickup element and manufacture Granted JPS56129379A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3181280A JPS56129379A (en) 1980-03-12 1980-03-12 Solid image-pickup element and manufacture
EP81100992A EP0035146B1 (en) 1980-02-15 1981-02-12 Semiconductor photoelectric device
DE8181100992T DE3176910D1 (en) 1980-02-15 1981-02-12 Semiconductor photoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3181280A JPS56129379A (en) 1980-03-12 1980-03-12 Solid image-pickup element and manufacture

Publications (2)

Publication Number Publication Date
JPS56129379A JPS56129379A (en) 1981-10-09
JPS6322075B2 true JPS6322075B2 (enrdf_load_html_response) 1988-05-10

Family

ID=12341495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3181280A Granted JPS56129379A (en) 1980-02-15 1980-03-12 Solid image-pickup element and manufacture

Country Status (1)

Country Link
JP (1) JPS56129379A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180055A (ja) * 1981-11-26 1983-10-21 Seiko Epson Corp イメ−ジセンサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5926154B2 (ja) * 1974-07-05 1984-06-25 株式会社日立製作所 固体撮像装置
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
JPS6042666B2 (ja) * 1978-02-01 1985-09-24 松下電器産業株式会社 固体撮像装置
JPS5936435B2 (ja) * 1978-05-16 1984-09-04 松下電器産業株式会社 薄膜太陽電池

Also Published As

Publication number Publication date
JPS56129379A (en) 1981-10-09

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