JPS63215518A - Chemical compound of inalzn3o6 with hexagonal system layer structure - Google Patents
Chemical compound of inalzn3o6 with hexagonal system layer structureInfo
- Publication number
- JPS63215518A JPS63215518A JP4567087A JP4567087A JPS63215518A JP S63215518 A JPS63215518 A JP S63215518A JP 4567087 A JP4567087 A JP 4567087A JP 4567087 A JP4567087 A JP 4567087A JP S63215518 A JPS63215518 A JP S63215518A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- heating
- metallic
- mixture
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- 230000002829 reductive effect Effects 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000008204 material by function Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910018137 Al-Zn Inorganic materials 0.000 abstract 1
- 229910018573 Al—Zn Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材料として
有用な新規化合物であるＩｎＡｌＺｎ、Ｏ，で示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by InAlZn, O, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and its production. Regarding the law.
従来技術
従来、（Ｙｂ”Ｆｅ”０＋） ａＦｅ”０（ｎは整数を
示す）で示される六方晶系の層状構造を有する化合物は
本出願人によって合成され、知られている。Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb"Fe"0+) aFe"0 (n represents an integer) was synthesized by the present applicant and is known.
ＹｂＦｅｚＯａ ＋ＹｂｚＦｅ３Ｏ７．Ｙｂ３ＦｅｎＯ
＋ｏ及びＹｂＦｅ０＋３の六方晶系としての格子定数、
ｙｂｏ、、ｓ層、ＰｅＯ＋、ｓ層＋ Ｆｆ４０ｚ、
ｓ層の単位格子内における暦数を示すと表−１の通りで
ある。YbFezOa +YbzFe3O7. Yb3FenO
+o and the lattice constant of YbFe0+3 as a hexagonal system,
ybo, s layer, PeO+, s layer + Ff40z,
Table 1 shows the calendar numbers in the unit cell of the s layer.
これらの化合物は酸化鉄（Ｆｅｄ） １モルに対して
、ＹｂＦｅ０＝がｎモル（ｎ−１，２，３，・−”）の
割合で化合していると考えられる層状構造を持つ化合物
である。These compounds are compounds with a layered structure in which YbFe0= is thought to be combined at a ratio of n moles (n-1, 2, 3, .-") per 1 mole of iron oxide (Fed). .
発明の目的
本発明は（ＹｂＦｅ０３）−ＦｅＯの化学式において、
ｎ＝１７３に相当し、ｙｂ３＋の代わりにＩｎ’°を、
Ｆｅ３＋の代わりにＡｌ’＋を、Ｆｅ”″の代わりにＺ
ｎ”を置きかえて得られた新規な化合物を提供するにあ
る。Purpose of the Invention The present invention relates to the chemical formula (YbFe03)-FeO,
Corresponds to n = 173, In'° instead of yb3+,
Al'+ instead of Fe3+, Z instead of Fe''''
An object of the present invention is to provide a novel compound obtained by replacing n''.
発明の構成
本発明のＩｎＡｌＺｎ５Ｏｂで示される化合物は、イオ
ン結晶モデルではＩｎ”（Ａｔ” ＋ Ｚｎ”）Ｚｎ、
”０．ｚ−として記載され、その構造はＩｎＯ＋、ｓ層
。Structure of the Invention In the ionic crystal model, the compound represented by InAlZn5Ob of the present invention is In"(At" + Zn")Zn,
It is described as "0.z-" and its structure is InO+, s layer.
（Ａｌ”、Ｚｎ”″）（ｈ、ｓ層およびＺｎＯ層の積層
によって形成されており、著しい構造異方性を持つこと
がその特徴の一つである。 Ｚｎ”イオンの１７３はＡ
ｌ”と共に（＾１” 、 Ｚｎ”）Ｏｚ、ｓ層を作り、
残りの２７３はＺｎＯ層を作っている。六方晶系として
の格子定数は次の通りである。(Al", Zn"") (It is formed by stacking h, s layer and ZnO layer, and one of its characteristics is that it has remarkable structural anisotropy. 173 of Zn" ion is A
Together with l” (^1”, Zn”), create an Oz, s layer,
The remaining 273 are ZnO layers. The lattice constants as a hexagonal crystal system are as follows.
ａ ＝３．２８１ ± ０．００１ （人）ｃ ＝
４１．３５ ± ０．０１ （人）この化合物の
面指数（ｈｋｆｆｉ）、面間隔（ｄ（人））（ｄ、は実
測値＋ ｄＣは計算値を示す〕およびＸ線に対する相対
反射強度（１％）を示すと表−２の通りである。a = 3.281 ± 0.001 (person) c =
41.35 ± 0.01 (person) This compound's planar index (hkffi), interplanar spacing (d (person)) (d is the measured value + dC is the calculated value), and the relative reflection intensity for X-rays (1 %) is shown in Table 2.
この化合物は光機能材料、半導体材料、触媒材料等に有
用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属インジウムあるいは酸化インジウムもしくは加熱に
より酸化インジウムに分解される化合物と、金属アルミ
ニウムあるいは酸化アルミニウムもしくは加熱により酸
化アルミニウムに分解される化合物と、金属亜鉛あるい
は酸化亜鉛もしくは加熱により酸化亜鉛に分解される化
合物とを、Ｉｎ。Metal indium or indium oxide or a compound that decomposes into indium oxide when heated; metal aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and metal zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. In.
ＡｔおよびＺｎの割合が原子比で１対１対３の割合で混
合し、該混合物を６００℃以上の温度で、大気中。At and Zn were mixed in an atomic ratio of 1:1:3, and the mixture was heated to a temperature of 600° C. or higher in the atmosphere.
酸化性雰囲気中あるいはＩｎおよびＡ１が各々３価イオ
ン状態、 Ｚｎが２価イオン状態より還元されない還元
雰囲気中で加熱することによって製造し得られる。It can be produced by heating in an oxidizing atmosphere or in a reducing atmosphere in which In and A1 are not reduced more than the trivalent ion state and Zn is less reduced than the divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に１０μｍ以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, particularly preferably 10 μm or less.
また、光機能材料、半導体材料として用いる場合には不
純物の混入をきらうので、純度の高いことが好ましい。Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided.
出発物質が加熱により金属酸化物を得る化合物としては
、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙げ
られる。Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｉｎ、＾ｌ及びＺｎの割合が原子比
で１対１対３の割合であることが必要である。The mixing ratio of the raw materials needs to be such that the ratio of In, ^l, and Zn is 1:1:3 in atomic ratio.
これをはずすと目的とする化合物の単−相を得ることが
できない。If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＩｎおよ
びＡｌが各々３価イオン状態、Ｚｎが２価イオン状態か
ら還元されない還元雰囲気中で６００℃以上のもとで加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度には制約はない。加熱終了後急冷する
か、あるいは大気中に急激に引き出せばよい。This mixture is heated at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which In and Al are not reduced from their respective trivalent ion states and Zn from their divalent ion state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.
得られたＩｎＡｌＺｎ３Ｏ．化合物の粉末は無色であり
、粉末Ｘ線回折法によると結晶構造を有することが分か
った。その結晶構造は層状構造であり、ＩｎＯ＋、ｓ層
＋ （Ａｌ＋ Ｚｎ）Ｏｔ、ｓ層、及びＺｎＯ層の積み
重ねによって形成されていることが分かった。The obtained InAlZn3O. The compound powder was colorless and was found to have a crystalline structure by powder X-ray diffraction. It was found that the crystal structure was a layered structure, and was formed by stacking InO+, s layer + (Al+ Zn)Ot, s layer, and ZnO layer.
実施例
純度９９．９９％以上のインジウム（ｆｎｚｏｓ）粉末
。Example Indium (fnzos) powder with a purity of 99.99% or more.
純度９９．９９％以上の酸化アルミニウム（Ａｌ！０３
）粉末、および試薬特級の酸化亜鉛（ＺｎＯ）粉末をモ
ル比で１対１対６の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約３Ｏ分間部合し、平均粒径数μｍの
微粉末混合物を得た。該混合物を白金管内に封入し、１
４５０℃に設定された管状シリコニット炉内に入れ６日
間加熱し、その後、試料を炉外にとりだし、室温まで急
速に冷却した。得られた試料はＩｎＡｌＺｎ５Ｏｉ単−
相であり、粉末Ｘ線回折法によって面指数（ｈｋｊり、
面間隔（ｄｏ）および相対反射強度（１％）を測定した
。その結果は表−２の通りであった。Aluminum oxide (Al!03) with a purity of 99.99% or more
) powder and reagent-grade zinc oxide (ZnO) powder at a molar ratio of 1:1:6, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to form a powder with an average particle size of several μm. A fine powder mixture was obtained. The mixture was sealed in a platinum tube, and 1
The sample was placed in a tubular siliconite furnace set at 450°C and heated for 6 days, and then taken out of the furnace and rapidly cooled to room temperature. The obtained sample was InAlZn5Oi mono-
It is a phase, and the surface index (hkj,
The interplanar spacing (do) and relative reflection intensity (1%) were measured. The results were as shown in Table-2.
六方晶系としての格子定数は
ａ −３，２８１±０．００１ （人）ｃ −４１，３
５±０．０１ （人）であった。The lattice constant as a hexagonal crystal system is a -3,281±0.001 (person) c -41,3
It was 5±0.01 (person).
上記の格子定数および表−２の面指数（ｈｋｊ）より算
出した面間隔（ｄｃ（人））は、実測の面間隔（ｄ。The interplanar spacing (dc (people)) calculated from the above lattice constant and the planar index (hkj) in Table 2 is the actually measured interplanar spacing (d).
Ｃ人〉）と極めてよく一致した。The results were in very good agreement with Person C).
発明の効果
本発明は光機能材料、半導体材料及び触媒とし・て有用
な新規化合物を提供如貴１４に効に社する。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
特許出願人 科学技術庁無機材質研究所長潮 高
信 雄Patent applicant Takashi Nagashio, Institute of Inorganic Materials, Science and Technology Agency
Nobuo
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by InAlZn_3O_6.
加熱により酸化インジウムに分解される化合物と、金属
アルミニウムあるいは酸化アルミニウムもしくは加熱に
より酸化アルミニウムに分解される化合物と、金属亜鉛
あるいは酸化亜鉛もしくは加熱により酸化亜鉛に分解さ
れる化合物とを、Ｉｎ、ＡｌおよびＺｎの割合が原子比
で１対１対３の割合で混合し、該混合物を６００℃以上
の温度で、大気中、酸化性雰囲気中あるいはＩｎおよび
Ａｌが各々３価イオン状態、Ｚｎが２価イオン状態より
還元されない還元雰囲気中で加熱することを特徴とする
ＩｎＡｌＺｎ＿３Ｏ＿６で示される六方晶系の層状構造
を有する化合物の製造法。(2) Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and Metallic indium or zinc oxide or a compound that decomposes into zinc oxide when heated. In, Al and Zn are mixed in an atomic ratio of 1:1:3, and the mixture is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or when In and Al are A method for producing a compound having a hexagonal layered structure represented by InAlZn_3O_6, which comprises heating in a reducing atmosphere in which Zn in a trivalent ion state is less reduced than in a divalent ion state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4567087A JPH0244244B2 (en) | 1987-02-27 | 1987-02-27 | INAIZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4567087A JPH0244244B2 (en) | 1987-02-27 | 1987-02-27 | INAIZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63215518A true JPS63215518A (en) | 1988-09-08 |
| JPH0244244B2 JPH0244244B2 (en) | 1990-10-03 |
Family
ID=12725820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4567087A Expired - Lifetime JPH0244244B2 (en) | 1987-02-27 | 1987-02-27 | INAIZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244244B2 (en) |
-
1987
- 1987-02-27 JP JP4567087A patent/JPH0244244B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0244244B2 (en) | 1990-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63210022A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn3o6 and its production | |
| JPS63210024A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its production | |
| JPS63210023A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn4o7 and its production | |
| JPS63265818A (en) | Compound having hexagonal laminar structure expressed by ingazn7o10 and its production | |
| JPH0244262B2 (en) | INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPS63215518A (en) | Chemical compound of inalzn3o6 with hexagonal system layer structure | |
| JPS63295417A (en) | Compound shown by lualzn6o9 and having hexagonal lamellar structure and its production | |
| JPS63274622A (en) | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production | |
| JPH0244251B2 (en) | SCGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPS63201016A (en) | Compound having layer structure of hexagonal system shown in inalzn2o5 and its production | |
| JPS63256525A (en) | Compound having hexagonal layer structure represented by inalzn5o8 and production thereof | |
| JPS63295420A (en) | Compound shown by ybgazn4o7 and having hexagonal lamellar structure and its production | |
| JPS63265816A (en) | Compound having hexagonal laminar structure expressed by scgazn7o10 and its production | |
| JPS63210018A (en) | Compound having laminar structure of hexagonal crystal system expressed by scalznmgo5 and its production | |
| JPS63256523A (en) | Compound having hexagonal layer structure represented by lugazn3o6 and production thereof | |
| JPS63215522A (en) | Chemical compound of scfezn4o7 with hexagonal system layer structure | |
| JPH0244252B2 (en) | SCGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPS63295430A (en) | Compound shown by lugazn6o9 and having hexagonal lamellar structure and its production | |
| JPS63274621A (en) | Compound having hexagonal laminar structure expressed by scalzn6o9 and its production | |
| JPH0244247B2 (en) | SCGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPH0359005B2 (en) | ||
| JPH0244253B2 (en) | SCGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPS63256520A (en) | Compound having hexagonal layer structure represented by scalzn5o8 and production thereof | |
| JPS63256524A (en) | Compound having hexagonal layer structure represented by lugazn4o7 and production thereof | |
| JPH0314778B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |