JPS63211630A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS63211630A
JPS63211630A JP1709288A JP1709288A JPS63211630A JP S63211630 A JPS63211630 A JP S63211630A JP 1709288 A JP1709288 A JP 1709288A JP 1709288 A JP1709288 A JP 1709288A JP S63211630 A JPS63211630 A JP S63211630A
Authority
JP
Japan
Prior art keywords
substrate
plasma
potential
discharge
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1709288A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033380B2 (enrdf_load_stackoverflow
Inventor
Takashi Tsuchimoto
槌本　尚
Yoshimichi Hirobe
広部　嘉道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1709288A priority Critical patent/JPS63211630A/ja
Publication of JPS63211630A publication Critical patent/JPS63211630A/ja
Publication of JPH033380B2 publication Critical patent/JPH033380B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP1709288A 1988-01-29 1988-01-29 プラズマ処理装置 Granted JPS63211630A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1709288A JPS63211630A (ja) 1988-01-29 1988-01-29 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1709288A JPS63211630A (ja) 1988-01-29 1988-01-29 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10916179A Division JPS5633839A (en) 1979-08-29 1979-08-29 Plasma treatment and device therefor

Publications (2)

Publication Number Publication Date
JPS63211630A true JPS63211630A (ja) 1988-09-02
JPH033380B2 JPH033380B2 (enrdf_load_stackoverflow) 1991-01-18

Family

ID=11934347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1709288A Granted JPS63211630A (ja) 1988-01-29 1988-01-29 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS63211630A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156703A (en) * 1987-03-18 1992-10-20 Hans Oechsner Mthod for the surface treatment of semiconductors by particle bombardment
JP2014525982A (ja) * 2011-06-07 2014-10-02 エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ 硬質の炭素層のためのコーティング除去方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156703A (en) * 1987-03-18 1992-10-20 Hans Oechsner Mthod for the surface treatment of semiconductors by particle bombardment
JP2014525982A (ja) * 2011-06-07 2014-10-02 エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ 硬質の炭素層のためのコーティング除去方法

Also Published As

Publication number Publication date
JPH033380B2 (enrdf_load_stackoverflow) 1991-01-18

Similar Documents

Publication Publication Date Title
JP3917176B2 (ja) プラズマ反応チャンバーをその場でマグネトロンクリーニングするための装置と方法
US4808258A (en) Plasma processing method and apparatus for carrying out the same
US6849857B2 (en) Beam processing apparatus
JPS6346575B2 (enrdf_load_stackoverflow)
US5961793A (en) Method of reducing generation of particulate matter in a sputtering chamber
US7034285B2 (en) Beam source and beam processing apparatus
JPH09129621A (ja) パルス波形バイアス電力
JPH03287774A (ja) プラズマ処理方法
JPS6318323B2 (enrdf_load_stackoverflow)
US6320154B1 (en) Plasma processing method
US6909086B2 (en) Neutral particle beam processing apparatus
JP4073173B2 (ja) 中性粒子ビーム処理装置
JPH08255782A (ja) プラズマ表面処理装置
EP0789506B1 (en) Apparatus for generating magnetically neutral line discharge type plasma
JPS63211630A (ja) プラズマ処理装置
JP3599670B2 (ja) プラズマ処理方法および装置
JPH08319588A (ja) プラズマエッチング装置
JPS61177728A (ja) 低エネルギイオン化粒子照射装置
JPS63211631A (ja) プラズマ処理装置
JPH0252855B2 (enrdf_load_stackoverflow)
JP2003077903A (ja) プラズマ処理装置及びプラズマ処理方法
JP3455616B2 (ja) エッチング装置
KR20010081035A (ko) 플라즈마 에칭 장치
JPH1167493A (ja) プラズマ処理装置及びプラズマ処理方法
JP3123423B2 (ja) プラズマ処理装置およびプラズマ処理方法