JPS63205813A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPS63205813A JPS63205813A JP3791087A JP3791087A JPS63205813A JP S63205813 A JPS63205813 A JP S63205813A JP 3791087 A JP3791087 A JP 3791087A JP 3791087 A JP3791087 A JP 3791087A JP S63205813 A JPS63205813 A JP S63205813A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous carbon
- recording medium
- magnetic recording
- carbon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 57
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 38
- 230000001681 protective effect Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 13
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 230000001050 lubricating effect Effects 0.000 claims abstract description 6
- 238000007737 ion beam deposition Methods 0.000 claims abstract description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 3
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 63
- 150000002894 organic compounds Chemical class 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000010702 perfluoropolyether Substances 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 235000003441 saturated fatty acids Nutrition 0.000 claims description 3
- 150000004671 saturated fatty acids Chemical class 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 235000014113 dietary fatty acids Nutrition 0.000 abstract description 2
- 229930195729 fatty acid Natural products 0.000 abstract description 2
- 239000000194 fatty acid Substances 0.000 abstract description 2
- 150000004665 fatty acids Chemical class 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000003302 ferromagnetic material Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 238000004227 thermal cracking Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- 238000012360 testing method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- -1 ethylene, propylene, butene Chemical class 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 235000021355 Stearic acid Nutrition 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 239000008117 stearic acid Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- ZGEGCLOFRBLKSE-UHFFFAOYSA-N 1-Heptene Chemical compound CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZVJOQYFQSQJDDX-UHFFFAOYSA-N 1,1,2,3,3,4,4,4-octafluorobut-1-ene Chemical compound FC(F)=C(F)C(F)(F)C(F)(F)F ZVJOQYFQSQJDDX-UHFFFAOYSA-N 0.000 description 1
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- CNDHHGUSRIZDSL-UHFFFAOYSA-N 1-chlorooctane Chemical compound CCCCCCCCCl CNDHHGUSRIZDSL-UHFFFAOYSA-N 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高密度記録に適した磁気記録媒体に係リ、特に
耐久性に優れた信頼性の高い磁気記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic recording medium suitable for high-density recording, and particularly to a highly reliable magnetic recording medium with excellent durability.
強磁性を有する金属、合金あるいは酸化物などよりなる
磁性体薄膜を磁気記録層として用いる薄膜型磁気記録媒
体は、従来の磁性粉を塗布して磁気記録層を作る塗布型
磁気記録媒体に比べて磁気記録密度が一層高められるこ
とはよく知られている。このような、薄膜型磁気記録媒
体は、大容量磁気ディスクや高記録密度磁気テープなど
の用途に好適である。しかし1g膜現型磁気記録媒の磁
気記録層である磁性層は、機械的強度が弱いために記録
再生時に磁気ヘッドの接触あるいは摺動によって摩耗さ
れ易く、これがノイズや誤記録の原因となっていた。こ
れを防止するために、磁性層の表面に保護膜を設けるこ
とが行われている。この保護膜として1例えば、特開昭
59−154641号公報などに提案されているように
、プラズマ重合によって高分子保護膜を形成させるもの
、特開昭59−165235号公報などのように滑剤溶
液を塗布し乾燥させて保護膜とするもの、特開昭59−
175030号公報などのように蒸着によって有機質保
護膜を形成させるものなどが挙げられる。これらの方法
によって形成された保護膜は、いずれも磁性層の摩耗を
低減し磁気記録媒体の寿命を長期化できる効果はあるが
、しかし磁気ヘッド走行の安定性や高湿度環境下におけ
る長期安定性など実用レベルでの必要特性を十分に満足
させるまでには至っていなかった。Thin-film magnetic recording media, which use a magnetic thin film made of a ferromagnetic metal, alloy, or oxide as a magnetic recording layer, are more efficient than conventional coated magnetic recording media, in which the magnetic recording layer is made by applying magnetic powder. It is well known that magnetic recording density can be further increased. Such thin film magnetic recording media are suitable for applications such as large capacity magnetic disks and high recording density magnetic tapes. However, the magnetic layer, which is the magnetic recording layer of current 1g film magnetic recording media, has weak mechanical strength and is easily worn out by the contact or sliding of the magnetic head during recording and reproduction, which causes noise and erroneous recording. Ta. In order to prevent this, a protective film is provided on the surface of the magnetic layer. As this protective film, for example, a polymer protective film formed by plasma polymerization as proposed in JP-A-59-154641, a lubricant solution as in JP-A-59-165235, etc. A protective film made by coating and drying, JP-A-59-
Examples include those in which an organic protective film is formed by vapor deposition, as disclosed in Japanese Patent No. 175030. All of the protective films formed by these methods have the effect of reducing wear on the magnetic layer and prolonging the life of the magnetic recording medium, but they do have the effect of reducing the running stability of the magnetic head and long-term stability in high-humidity environments. However, it has not yet reached the point where it fully satisfies the characteristics required at a practical level.
上述したごとく、従来技術による保護膜は、磁気ヘッド
走行の安定性や耐摩耗性、ならびに高湿度環境下におけ
る耐食性および信頼性など実用レベルでの必要特性を十
分に満足させるものではなかった。このため、本発明者
らは種々の保護膜について、耐摩耗性および潤滑性の観
点から保護膜の評価を行った結果、炭化水素をプラズマ
分解して得られる非晶質炭素皮膜は、保護膜としての特
性が上記従来技術による保護膜に比べて一段と優れてい
ることを見出した。しかし、この非晶質炭素皮膜は、そ
の潤滑性が経時的に変化し劣化するので、長期安定性に
欠ける欠点を有していることが判明した。As described above, the protective films according to the prior art do not fully satisfy the characteristics required at a practical level, such as stability of magnetic head running, wear resistance, corrosion resistance and reliability in a high humidity environment. Therefore, the present inventors evaluated various protective films from the viewpoint of wear resistance and lubricity, and found that the amorphous carbon film obtained by plasma decomposition of hydrocarbons is It has been found that the properties of the protective film are far superior to those of the above-mentioned conventional protective film. However, it has been found that this amorphous carbon film has the drawback of lacking long-term stability because its lubricity changes and deteriorates over time.
本発明の目的は、上記の従来技術による保護膜よりも保
護膜としての必要特性が一段と優れている、炭化水素を
プラズマ分解や熱分解などして得られる非晶質炭素皮膜
の潤滑性の経時劣化を防止し、長期にわたり耐摩耗性な
らびに潤滑性が良好で、耐久性に優れた信頼性の高い高
密度記録に適した磁気記録媒体を提供することにある。An object of the present invention is to improve the lubricity over time of an amorphous carbon film obtained by plasma decomposition or thermal decomposition of hydrocarbons, which has much better properties as a protective film than the protective films of the prior art described above. The object of the present invention is to provide a magnetic recording medium that prevents deterioration, has good wear resistance and lubricity over a long period of time, has excellent durability, is highly reliable, and is suitable for high-density recording.
[問題点を解決するための手段〕
上記目的は、磁性層の保護膜として非晶質炭素皮膜を形
成し、さらにこの非晶質炭素皮膜の表面に特定組成の有
機化合物層を分子結合させることにより、達成される。[Means for solving the problem] The above purpose is to form an amorphous carbon film as a protective film for the magnetic layer, and to further molecularly bond an organic compound layer of a specific composition to the surface of this amorphous carbon film. This is achieved by
非晶質炭素皮膜は、炭化水素ガスのプラズマ分解や熱分
解などで生じた活性種が固体表面で急速に冷却されて堆
積するものであり、表面に未反応ラジカルや不飽和結合
などの活性部位を多く有するものと考えられる。これに
有機化合物層を分子結合させて不活性化することにより
酸素や水蒸気が反応することを防ぐことができる。In an amorphous carbon film, active species generated by plasma decomposition or thermal decomposition of hydrocarbon gas are rapidly cooled and deposited on a solid surface, and active sites such as unreacted radicals and unsaturated bonds are deposited on the surface. It is thought that there are many By molecularly bonding an organic compound layer to this to inactivate it, it is possible to prevent oxygen and water vapor from reacting.
上記非晶質炭素皮膜の形成方法としては、例えば以下に
示す方法を挙げることができる。Examples of the method for forming the amorphous carbon film include the following methods.
(1)炭化水素ガスを単独または他のガスと混合したも
のをプラズマ分解し、堆積させるプラズマCvD@。プ
ラズマの発生方法としてはマイクロ波放電、高周波放電
、直流放電などを用いることができる。いずれの場合に
も堆積させる基板側をプラズマに対し負電位とし、10
0eV以上のエネルギーで正イオンが堆積膜に衝突する
ようにすると硬質で耐摩耗性のある非晶質炭素皮膜が得
られる。(1) Plasma CvD@, in which hydrocarbon gas alone or mixed with other gases is plasma decomposed and deposited. As a method for generating plasma, microwave discharge, high frequency discharge, direct current discharge, etc. can be used. In either case, the substrate side to be deposited is set to a negative potential with respect to the plasma, and the
When positive ions are allowed to collide with the deposited film at an energy of 0 eV or more, a hard and wear-resistant amorphous carbon film can be obtained.
(2)炭化水素ガスを単独または他のガスと混合したも
のを電子線あるいはホローカソード放電などでイオン化
し、生じたイオンを電界により引き出して基板に衝突さ
せ、堆積させるイオンビームデポジション法。(2) An ion beam deposition method in which a hydrocarbon gas alone or mixed with other gases is ionized using an electron beam or hollow cathode discharge, and the resulting ions are extracted by an electric field and collided with a substrate to be deposited.
(3)グラファイトカーボンをターゲットとして不活性
ガスまたは水素中でスパッタし、ターゲットと対向する
基板上に堆積させるスパッタ法。(3) A sputtering method in which graphite carbon is sputtered in an inert gas or hydrogen as a target and deposited on a substrate facing the target.
本発明の非晶質炭素皮膜を、プラズマまたは加熱による
CVD法、もしくはイオンビームデポジション法などに
よって形成させる場合に用いる炭化水素ガスは、メタン
、エタン、プロパン、ブタン、ペンタン、ヘキサン、オ
クタンなどの飽和炭化水素、エチレン、プロピレン、ブ
テン、ヘキシンなどの不飽和炭化水素、ベンゼン、トル
エン、キシレン、スチレン、エチルベンゼンなどの芳香
族炭化水素、フロロメタン、ジフロロメタン、トリフロ
ロメタン、テトラフロロメタン、ジフロロエタン、テト
ラフロロエチレン、ヘキサフロロプロピレン、テトラフ
ロロシラン、ジクロロエチレン、テトラクロロエタンな
どの飽和または不飽和のハロゲン化合物、アルコール類
、ケトン類、エーテル類、脂肪酸類などを単独または混
合して用いることができる。Hydrocarbon gases used when forming the amorphous carbon film of the present invention by plasma or heating CVD method, ion beam deposition method, etc. include methane, ethane, propane, butane, pentane, hexane, octane, etc. Saturated hydrocarbons, unsaturated hydrocarbons such as ethylene, propylene, butene, hexene, aromatic hydrocarbons such as benzene, toluene, xylene, styrene, ethylbenzene, fluoromethane, difluoromethane, trifluoromethane, tetrafluoromethane, difluoroethane, tetrafluoro Saturated or unsaturated halogen compounds such as ethylene, hexafluoropropylene, tetrafluorosilane, dichloroethylene, and tetrachloroethane, alcohols, ketones, ethers, fatty acids, and the like can be used alone or in combination.
本発明の磁性層の保護膜として設ける非晶質炭素皮膜の
膜厚は、30〜2ooO人の範囲が好ましく、さらによ
り好ましい範囲は50〜500人である。この範囲を超
えて厚くなると、スペーシングロスが大きくなり磁気変
換特性が低下するので好ましくなく、また薄くなると保
護膜としての効果が低減するので好ましくない。The thickness of the amorphous carbon film provided as a protective film for the magnetic layer of the present invention is preferably in the range of 30 to 200 mm, and even more preferably in the range of 50 to 500 mm. If it becomes thicker than this range, the spacing loss will increase and the magnetic conversion characteristics will deteriorate, which is undesirable, and if it becomes thin, the effect as a protective film will decrease, which is undesirable.
そして、本発明の非晶質炭素皮膜の表面に有機化合物層
を分子結合させる手段として、次のような方法がある。The following method can be used to molecularly bond an organic compound layer to the surface of the amorphous carbon film of the present invention.
(1)プラズマCVD法あるいはイオンビームデポジシ
ョン法で非晶質炭素皮膜を形成した後、反応容器に有機
化合物蒸気を満たし、皮膜表面に残留するラジカルなど
活性点と有機化合物とを反応させる。(1) After forming an amorphous carbon film by plasma CVD or ion beam deposition, a reaction vessel is filled with organic compound vapor to cause active sites such as radicals remaining on the film surface to react with the organic compound.
(2)非晶質炭素皮膜をプラズマ処理し、表面にラジカ
ルを発生させた後、有機化合物蒸気に触れさせ反応させ
る。(2) The amorphous carbon film is subjected to plasma treatment to generate radicals on the surface, and then brought into contact with organic compound vapor to cause a reaction.
上記有機化合物は非晶質炭素皮膜の表面のラジカルと容
易に結合し、かつ酸素や水に対し安定であるものがよい
。また、潤滑性を有するものが好ましい。具体的には。The organic compound is preferably one that easily bonds with radicals on the surface of the amorphous carbon film and is stable against oxygen and water. Moreover, those having lubricity are preferable. in particular.
(イ)直鎖状炭化水素およびその誘導体、(ロ)飽和脂
肪酸、およびそのエステル類、(ハ) フッ素化アルキ
ル基を有する化合物、(ニ) パーフロロポリエーテル
類およびその誘導体、
などが挙げられる。特に、非晶質炭素皮膜の表面ラジカ
ルとの反応性を高めるためには、末端にビニル基、アリ
ル基、エポキシ基、ハロゲンなどを有する直鎖状有機化
合物であることがより好ましい。Examples include (a) linear hydrocarbons and their derivatives, (b) saturated fatty acids and their esters, (c) compounds having a fluorinated alkyl group, (d) perfluoropolyethers and their derivatives, etc. . In particular, in order to increase the reactivity with surface radicals of the amorphous carbon film, it is more preferable to use a linear organic compound having a vinyl group, allyl group, epoxy group, halogen, etc. at the end.
上記(イ)に示した直鎖状炭化水素およびその誘導体の
具体的化合物として1例えばn−ヘキサン、n−へブタ
ン、n−オクタンなど、および誘導体として、1−ヘキ
セン、1−ヘプテン、1−オクテン、1−ヘキサノール
、1−ヘプタツール、1−オクタツールなどがあり。Specific compounds of the linear hydrocarbons and their derivatives shown in (a) above include n-hexane, n-hebutane, n-octane, etc., and derivatives include 1-hexene, 1-heptene, 1- These include octene, 1-hexanol, 1-heptatool, and 1-octatool.
上記(ロ)に示した飽和脂肪酸およびそのエステル類と
しては、n−カプリル酸、n−ラウリル酸、ステアリン
酸など、およびそれらのメチルエステル、エチルエステ
ルなどを挙げることができ。Examples of the saturated fatty acids and esters thereof shown in (b) above include n-caprylic acid, n-lauric acid, stearic acid, and methyl esters and ethyl esters thereof.
上記(ハ)に示したフッ素化アルキル基を有する化合物
としては、パーフロロプロピルアルコール、パーフロロ
−1−ブテン、パーフロロブチルアルコール、パーフロ
ロブチリックアシドなどがあり、
さらに、上記(ニ)に示したパーフロロポリエーテル類
およびその誘導体としては、一般式、(OCF 2
CF +n
(式中、XはFまたはCF、基、nは3〜10を表す。Examples of the compounds having a fluorinated alkyl group shown in (c) above include perfluoropropyl alcohol, perfluoro-1-butene, perfluorobutyl alcohol, and perfluorobutylic acid; The perfluoropolyethers and their derivatives have the general formula (OCF 2
CF +n (wherein, X represents F or CF, a group, and n represents 3-10.
) で示される有機化合物であることが好ましい。) Preferably, it is an organic compound represented by
本発明の非晶質炭素皮膜の表面に形成させる有機化合物
層の膜厚は、10〜200人の範囲が好ましく、より好
ましい範囲は20〜100人である。この膜厚が、10
人未満では非晶質炭素皮膜の安定化ならびに潤滑性の付
与が不十分であり。The thickness of the organic compound layer formed on the surface of the amorphous carbon film of the present invention is preferably in the range of 10 to 200, more preferably 20 to 100. This film thickness is 10
If the temperature is lower than that of human body, the stabilization of the amorphous carbon film and the provision of lubricity are insufficient.
また200人を超えると、有機化合物蒸気の機械的強度
があまり強くないので、磁気ヘッドなどの摺接によって
有機化合物層が壊れ潤滑性保護膜としての効果が低下す
るので好ましくない。If the number of people exceeds 200, the mechanical strength of the organic compound vapor is not very strong, so the organic compound layer is broken by sliding contact with a magnetic head, etc., and its effectiveness as a lubricating protective film is reduced, which is not preferable.
本発明における磁気記録媒体の磁性層には、Fe、Co
、Niなどの金属、またはそれらを主成分とする合金も
しくは酸化物よりなる強磁性薄膜を用いることができる
。The magnetic layer of the magnetic recording medium in the present invention includes Fe, Co
A ferromagnetic thin film made of metals such as , Ni, or alloys or oxides containing these as main components can be used.
なお、本発明の磁気記録媒体の形状は、テープ、シート
、カード、ディスクなどいずれでも良いが、特に好まし
いのはテープ形状である。The magnetic recording medium of the present invention may have any shape such as tape, sheet, card, or disk, but tape shape is particularly preferred.
非晶質炭素皮膜の表面に分子結合させる有機化合物は、
非晶質炭素皮膜の表面の残留ラジカルなどの活性な部分
と反応して、安定化させるのみならず、非晶質炭素皮膜
の表面に疎水基を導入して水分が表面に付着するのを防
ぎ、結果として潤滑性の経時変化を小さくすることがで
きる。また、非晶質炭素皮膜の表面に分子結合させる有
機化合物の層は、それ自身においても良好な潤滑性を有
しているため、摩擦係数を一段と低下させることができ
る。The organic compound that is molecularly bonded to the surface of the amorphous carbon film is
It not only stabilizes by reacting with active parts such as residual radicals on the surface of the amorphous carbon film, but also prevents moisture from adhering to the surface by introducing hydrophobic groups to the surface of the amorphous carbon film. As a result, changes in lubricity over time can be reduced. Further, since the organic compound layer that is molecularly bonded to the surface of the amorphous carbon film has good lubricity by itself, the coefficient of friction can be further reduced.
以下に本発明の一実施例を挙げさらに詳細に説明する。 An example of the present invention will be described below in more detail.
(実施例1)
厚さ10μmのポリエステルフィルムにC0−Ni合金
を厚さ0.1μm蒸着し、磁性層とした。(Example 1) A C0-Ni alloy was deposited to a thickness of 0.1 μm on a polyester film having a thickness of 10 μm to form a magnetic layer.
このフィルムを内部電極型高周波(13,56MHz)
プラズマCVD装置の高周波印加側電極に貼りつけ、エ
チレンガスを導入して反応容器内を0.005Torr
に調整した。次に上記電極に高周波電力を200W印加
してプラズマを発生させた。This film is used for internal electrode type high frequency (13,56MHz)
It is attached to the high frequency application side electrode of the plasma CVD equipment, and ethylene gas is introduced to control the inside of the reaction vessel to 0.005 Torr.
Adjusted to. Next, high frequency power of 200 W was applied to the electrode to generate plasma.
1分間で30nmの厚さの非晶質炭素皮膜が形成された
。プラズマを停止後、ただちにエチレンガス導入を止め
1反応器内を真空に引いた後、1−クロロオクタンガス
を導入し、約2時間放置した。A 30 nm thick amorphous carbon film was formed in 1 minute. After stopping the plasma, the introduction of ethylene gas was immediately stopped and the inside of the reactor 1 was evacuated, and then 1-chlorooctane gas was introduced and left for about 2 hours.
上記のようにして作製した磁気テープを幅8膿に切り、
8ミリビデオの実機と同じシリンダを用いたスチル試験
機にかけ、テープを固定してシリンダを回転させてテー
プ張力を調べた。その後。Cut the magnetic tape prepared as above into a width of 8 mm.
The tape was run on a still testing machine using the same cylinder as the actual 8mm video machine, and the tape tension was examined by fixing the tape and rotating the cylinder. after that.
同テープを湿度90%の恒湿槽に入れ、1週間保存した
後、上記と同じ方法でテープ張力を測定した。The tape was placed in a humidity chamber with a humidity of 90% and stored for one week, after which the tape tension was measured in the same manner as above.
(比較例1)
実施例1と同様にポリエステルフィルム上に磁性層と非
晶質炭素皮膜を形成した後ただちに該フィルムを大気中
に取り出し、以下実施例1と同様の試験を行った。(Comparative Example 1) After forming a magnetic layer and an amorphous carbon film on a polyester film in the same manner as in Example 1, the film was immediately taken out into the atmosphere, and the same tests as in Example 1 were conducted.
上記の実施例1および比較例1の試験結果を、第1表に
示す。The test results of Example 1 and Comparative Example 1 above are shown in Table 1.
第1表に示すごとく、実施例1においては、テープ張力
が低く良好な潤滑性を示し、連続1時間以上の試験にお
いてもテープ張力の変化はほとんどなかった。また、恒
湿槽(湿度90%)に保存した後もテープ張力の変化は
ほとんどなく、良好な潤滑特性を示している。これに対
し、比較例1においては、恒湿槽保存後のサンプルでは
テープ張力が時間と共に上昇し、潤滑性が経時劣化して
いることが分かった。As shown in Table 1, in Example 1, the tape tension was low and good lubricity was exhibited, and there was almost no change in the tape tension even during the continuous test of 1 hour or more. Further, even after storage in a humidity chamber (90% humidity), there was almost no change in tape tension, indicating good lubricating properties. On the other hand, in Comparative Example 1, it was found that the tape tension of the sample after storage in a humidity chamber increased over time, and the lubricity deteriorated over time.
(実施例2)
厚さ10μmのポリエステルフィルムにCo −Ni合
金を厚さ0.1μm蒸着し、磁性層とした。(Example 2) A Co-Ni alloy was deposited to a thickness of 0.1 μm on a polyester film having a thickness of 10 μm to form a magnetic layer.
このフィルムにグラファイトカーボンをターゲットとし
てArガス雰囲気中でスパッタして非晶質炭素皮膜を形
成した。スパッタはプレーナマグネトロン型直流スパッ
タ装置を用い、カソード電圧−500V、電流2Aとし
た。 また、Arガス圧は20 m Torrとした。An amorphous carbon film was formed on this film by sputtering in an Ar gas atmosphere using graphite carbon as a target. Sputtering was performed using a planar magnetron type DC sputtering device, with a cathode voltage of -500V and a current of 2A. Further, the Ar gas pressure was set to 20 m Torr.
上記のように磁性層および非晶質炭素皮膜を形成したテ
ープを、平行平板電極を有する高周波プラズマ発生装置
の反応器内に入れ、 Arガスを0 、5 Torr導
入して2分間プラズマを発生させた。The tape on which the magnetic layer and amorphous carbon film were formed as described above was placed in a reactor of a high-frequency plasma generator having parallel plate electrodes, and Ar gas was introduced at 0.5 Torr to generate plasma for 2 minutes. Ta.
プラズマ停止後、ただちにArガスを止め反応器内を真
空排気した後あらかじめ反応器内に入れてあったステア
リン酸入りるつぼを加熱し、ステアリン酸蒸気を発生さ
せた。1o分間そのまま保持したのち、該テープを取り
出し、実施例1と同様にスチル試験機にかけ、テープ張
力を調べた。結果は、実施例1と同様テープ張力が低く
、恒湿槽に1週間保存後もその特性は変わらなかった。After the plasma was stopped, the Ar gas was immediately stopped and the inside of the reactor was evacuated, and then a crucible containing stearic acid, which had been placed in the reactor in advance, was heated to generate stearic acid vapor. After holding the tape as it was for 10 minutes, the tape was taken out and subjected to a still tester in the same manner as in Example 1 to examine the tape tension. As a result, the tape tension was low as in Example 1, and its characteristics did not change even after being stored in a humidity chamber for one week.
(実施例3)
8インチ磁気ディスク用Al基板の両面をアルマイト化
し、鉄を酸素とArの混合ガス雰囲気下でスパッタし熱
酸化して厚さ0.15μmの γ−酸化鉄皮膜を設けた
。この基板を、マグネトロン形イオン源を備えた真空容
器にイオン源と対向させて設置し、基板に一500vの
電圧を印加しつつイオン源にメタンガスを導入し、イオ
ンを発生させた。生じたイオンは加速されて基板に衝突
し、基板上に非晶質炭素皮膜を形成した。次にイオン化
を停止して低分子量のパーフロロポリエーテル分子+C
F2−CF−〇+n、n=4〜7)の蒸CF。(Example 3) Both sides of an Al substrate for an 8-inch magnetic disk were anodized, and iron was sputtered and thermally oxidized in a mixed gas atmosphere of oxygen and Ar to form a γ-iron oxide film with a thickness of 0.15 μm. This substrate was placed in a vacuum container equipped with a magnetron type ion source, facing the ion source, and while a voltage of -500 V was applied to the substrate, methane gas was introduced into the ion source to generate ions. The generated ions were accelerated and collided with the substrate, forming an amorphous carbon film on the substrate. Next, ionization is stopped and low molecular weight perfluoropolyether molecules +C
F2-CF-〇+n, n=4-7) steamed CF.
気を導入し、1時間そのまま保持した。Qi was introduced and held for 1 hour.
蒸気のようにして製造した磁気ディスクに磁気ヘッドを
接触させ、ディスクを回転してヘッドを浮上させ、再び
ディスクを止めてヘッドを接触させるサイクルを繰返し
行うCSS (コンタクト・スタート・ストップ)試験
を行った。その結果は。A CSS (contact start-stop) test was conducted in which a magnetic head was brought into contact with a magnetic disk manufactured using steam, the disk was rotated to lift the head into the air, and the disk was stopped again and the head was brought into contact. Ta. The result is.
3万回の繰返しの後もディスク面上にキズは発生せず、
ヘッドに摩耗粉も付着しなかった。このディスクを、9
o%RHの恒湿槽に1週間保存した後同じ試験を行った
が試験結果は上記と同じであった。No scratches appeared on the disc surface even after 30,000 repetitions.
No abrasion powder adhered to the head. This disc, 9
The same test was carried out after storage in a constant humidity chamber at o%RH for one week, and the test results were the same as above.
(比較例2)
実施例3において、非晶質炭素皮膜を形成後ディスクを
取り出し、C8S試験を行った。3万回の繰返しの後、
ディスク面上にわずかに摺動痕が見られ、ヘッドに摩耗
粉が付着した。また、90%RHの恒湿槽に1週間保存
した後同じ試験を行ったところ、2万回を超えたところ
で磁性層まで摩耗eが達した。(Comparative Example 2) In Example 3, after forming the amorphous carbon film, the disk was taken out and subjected to a C8S test. After 30,000 repetitions,
Slight scratches were seen on the disk surface, and abrasion powder adhered to the head. Further, when the same test was performed after storing it in a humidity chamber at 90% RH for one week, wear e reached the magnetic layer after 20,000 cycles.
以上詳細に説明したごとく、本発明による磁性層上に炭
素を主成分とする非晶質炭素皮膜の保護膜を形成させ、
さらにその上に直鎖状有機化合物層を分子結合させた潤
滑性保護膜を有する薄膜型磁気記録媒体は、特に耐摩耗
性および潤滑性が良好で、しかもそれらの必要特性の経
時劣化が生じないため、長期にわたって耐久性に優れた
信頼性の高い高密度記録に適した磁気記録媒体が得られ
る。As explained in detail above, a protective film of an amorphous carbon film containing carbon as a main component is formed on the magnetic layer according to the present invention,
Furthermore, thin-film magnetic recording media, which have a lubricating protective film on which a linear organic compound layer is molecularly bonded, have particularly good wear resistance and lubricity, and these necessary properties do not deteriorate over time. Therefore, a magnetic recording medium suitable for high-density recording that has excellent durability and reliability over a long period of time can be obtained.
Claims (1)
、上記磁性層上に、炭素を主成分とする非晶質炭素皮膜
を形成し、さらに上記非晶質炭素皮膜の表面に、該非晶
質炭素皮膜と分子結合する直鎖状有機化合物層よりなる
潤滑性保護膜を設けたことを特徴とする磁気記録媒体。 2、非晶質炭素皮膜は、炭化水素ガスの熱分解法、プラ
ズマ分解法またはイオンビームデポジション法、もしく
はグラファイトカーボンをターゲットとしたスパッタ法
のいずれかの方法により、磁性層上に堆積させたもので
あることを特徴とする特許請求の範囲第1項に記載の磁
気記録媒体。 3、非晶質炭素皮膜の膜厚は、30〜2000Åの範囲
であることを特徴とする特許請求の範囲第1項または第
2項に記載の磁気記録媒体。 4、非晶質炭素皮膜に分子結合させる直鎖状有機化合物
層は、直鎖状炭化水素およびその誘導体、飽和脂肪酸お
よびそのエステル、フッ素化アルキル基を有する化合物
、パーフロロポリエーテルおよびその誘導体のうちより
選ばれる少なくとも1種からなることを特徴とする特許
請求の範囲第1項ないし第3項のいずれか1項に記載の
磁気記録媒体。 5、非晶質炭素皮膜に分子結合させる直鎖状有機化合物
層は、末端にビニル基、アリル基、エポキシ基、ハロゲ
ンのうちより選ばれる少なくとも1種の基を有する直鎖
状有機化合物からなることを特徴とする特許請求の範囲
第1項ないし第3項のいずれか1項に記載の磁気記録媒
体。 6、非晶質炭素皮膜に分子結合させる直鎖状有機化合物
層の膜厚は、10〜200Åの範囲であることを特徴と
する特許請求の範囲第1項ないし第5項のいずれか1項
に記載の磁気記録媒体。[Scope of Claims] 1. In a magnetic recording medium having a ferromagnetic thin film as a magnetic layer, an amorphous carbon film containing carbon as a main component is formed on the magnetic layer, and the amorphous carbon film further comprises: A magnetic recording medium characterized in that a lubricating protective film comprising a linear organic compound layer that is molecularly bonded to the amorphous carbon film is provided on the surface of the magnetic recording medium. 2. The amorphous carbon film was deposited on the magnetic layer by either hydrocarbon gas thermal decomposition method, plasma decomposition method, ion beam deposition method, or sputtering method using graphite carbon as a target. The magnetic recording medium according to claim 1, which is a magnetic recording medium. 3. The magnetic recording medium according to claim 1 or 2, wherein the thickness of the amorphous carbon film is in the range of 30 to 2000 Å. 4. The linear organic compound layer to be molecularly bonded to the amorphous carbon film is composed of linear hydrocarbons and their derivatives, saturated fatty acids and their esters, compounds having fluorinated alkyl groups, perfluoropolyethers and their derivatives. The magnetic recording medium according to any one of claims 1 to 3, characterized in that the magnetic recording medium comprises at least one type selected from among these. 5. The linear organic compound layer to be molecularly bonded to the amorphous carbon film is composed of a linear organic compound having at least one group selected from vinyl group, allyl group, epoxy group, and halogen at the end. A magnetic recording medium according to any one of claims 1 to 3, characterized in that: 6. Any one of claims 1 to 5, characterized in that the thickness of the linear organic compound layer that is molecularly bonded to the amorphous carbon film is in the range of 10 to 200 Å. The magnetic recording medium described in .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3791087A JPH0721857B2 (en) | 1987-02-23 | 1987-02-23 | Magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3791087A JPH0721857B2 (en) | 1987-02-23 | 1987-02-23 | Magnetic recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63205813A true JPS63205813A (en) | 1988-08-25 |
JPH0721857B2 JPH0721857B2 (en) | 1995-03-08 |
Family
ID=12510697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3791087A Expired - Lifetime JPH0721857B2 (en) | 1987-02-23 | 1987-02-23 | Magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0721857B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63231721A (en) * | 1987-03-20 | 1988-09-27 | Fuji Electric Co Ltd | Magnetic recording medium |
JPH0287322A (en) * | 1988-09-22 | 1990-03-28 | Nippon Sheet Glass Co Ltd | Magnetic recording medium |
JPH0383224A (en) * | 1989-08-25 | 1991-04-09 | Nec Corp | Magnetic disk |
US6403194B1 (en) | 1998-09-03 | 2002-06-11 | Hitachi, Ltd. | Magnetic recording medium, process for producing same and magnetic disc apparatus |
-
1987
- 1987-02-23 JP JP3791087A patent/JPH0721857B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63231721A (en) * | 1987-03-20 | 1988-09-27 | Fuji Electric Co Ltd | Magnetic recording medium |
JPH0731807B2 (en) * | 1987-03-20 | 1995-04-10 | 富士電機株式会社 | Magnetic recording medium |
JPH0287322A (en) * | 1988-09-22 | 1990-03-28 | Nippon Sheet Glass Co Ltd | Magnetic recording medium |
JPH0383224A (en) * | 1989-08-25 | 1991-04-09 | Nec Corp | Magnetic disk |
US6403194B1 (en) | 1998-09-03 | 2002-06-11 | Hitachi, Ltd. | Magnetic recording medium, process for producing same and magnetic disc apparatus |
US7037607B2 (en) | 1998-09-03 | 2006-05-02 | Hitachi Global Storage Technologies Japan, Ltd. | Magnetic recording medium, process for producing same and magnetic disc apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0721857B2 (en) | 1995-03-08 |
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