JPS63204738A - Method for handling semiconductor wafer - Google Patents
Method for handling semiconductor waferInfo
- Publication number
- JPS63204738A JPS63204738A JP62038502A JP3850287A JPS63204738A JP S63204738 A JPS63204738 A JP S63204738A JP 62038502 A JP62038502 A JP 62038502A JP 3850287 A JP3850287 A JP 3850287A JP S63204738 A JPS63204738 A JP S63204738A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- main body
- handling
- wafer
- tool main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 36
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Automatic Assembly (AREA)
- Manipulator (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体ウェーハのハンドリングに用いるツール本体の半
導体ウェーハに接触する接触面に、酢酸ビニル樹脂をコ
ーティングして半導体ウェーへのハンドリングを行って
、半導体ウェーハの受けるダメージを減少させる半導体
ウェーハのハンドリング方法。[Detailed Description of the Invention] [Summary] The contact surface of the main body of a tool used for handling semiconductor wafers that contacts the semiconductor wafer is coated with vinyl acetate resin, and the damage to the semiconductor wafer is prevented by handling the semiconductor wafer. How to reduce semiconductor wafer handling.
本発明は、半導体ウェーハのハンドリング方法に係り、
特に半導体ウェーハの汚染によるダメージを防止する方
法に関するものである。The present invention relates to a semiconductor wafer handling method,
In particular, it relates to a method for preventing damage to semiconductor wafers due to contamination.
半導体装置の製造工程においては、最近の半導体装置の
高集積度化に伴うパターンの微細化により、半導体ウェ
ーハのハンドリングが非常に難しくなっている。In the manufacturing process of semiconductor devices, handling of semiconductor wafers has become extremely difficult due to the miniaturization of patterns accompanying the recent increase in the degree of integration of semiconductor devices.
以上のような状況から半導体ウェーハにダメージを与え
ない半導体ウェーハのハンドリング方法が要望されてい
る。Under the above circumstances, there is a need for a method for handling semiconductor wafers that does not cause damage to the semiconductor wafers.
従来の半導体ウェーへのハンドリング方法は、第２図に
示すようにステンレススチール、テフロン或いは石英か
らなるハンドリングツール本体ｌの接触面１ａを直接半
導体ウェーハ３の表面に接触させ、真空で吸着して半導
体ウェーハ３のハンドリングを行っている。The conventional method for handling semiconductor wafers is to bring the contact surface 1a of a handling tool body 1 made of stainless steel, Teflon, or quartz into direct contact with the surface of a semiconductor wafer 3, as shown in FIG. Wafer 3 is being handled.
以上説明の従来の半導体ウェーハのハンドリング方法で
問題となるのは、半導体ウェーハの表面に直接ツール本
体の接触面を接触させてハンドリングを行っていること
である。A problem with the conventional semiconductor wafer handling method described above is that handling is performed by bringing the contact surface of the tool body into direct contact with the surface of the semiconductor wafer.
即ち、ツール本体の接触面が半導体ウェーハの表面に接
触すると、半導体ウェーへの表面を傷つけたり汚染させ
るので、結晶欠陥が発生し、接触部の半導体素子が不良
となっている。That is, when the contact surface of the tool body comes into contact with the surface of the semiconductor wafer, the surface of the semiconductor wafer is damaged or contaminated, resulting in crystal defects and defective semiconductor elements at the contact portion.
以上のような状況から簡単且つ安価に実施できる半導体
ウェーへのハンドリング方法の提供を目的としたもので
ある。In view of the above-mentioned circumstances, the present invention aims to provide a method for handling semiconductor wafers that can be easily and inexpensively implemented.
上記問題点は、半導体ウェーハのハンドリングに用いる
ツール本体の半導体ウェーハに接触する接触面に、酢酸
ビニル樹脂をコーティングして行う本発明による半導体
ウェーハのハンドリング方法によって解決される。The above-mentioned problems are solved by the semiconductor wafer handling method according to the present invention, which is performed by coating the contact surface of a tool body used for handling semiconductor wafers, which contacts the semiconductor wafer, with vinyl acetate resin.
即ち本発明においては、半導体ウェーハをハンドリング
するツール本体の半導体ウェーハに接触する接触面一、
酢酸ビニル樹脂をコーティングしているのでこの部分に
半導体ウェーハの表面が接触しても半導体素子が不良に
なることがなくなる。That is, in the present invention, the contact surface of the tool body for handling semiconductor wafers that contacts the semiconductor wafer;
Since it is coated with vinyl acetate resin, the semiconductor element will not become defective even if the surface of the semiconductor wafer comes into contact with this part.
以下第１図について本発明の一実施例を説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図に示すように半導体ウェーハをハンドリングする
場合に、半導体ウェーハ３に接触するツール本体１の接
触面１ａには酢酸ビニル樹脂２が塗布されている。As shown in FIG. 1, a vinyl acetate resin 2 is coated on a contact surface 1a of a tool body 1 that comes into contact with a semiconductor wafer 3 when handling a semiconductor wafer.
この酢酸ビニル樹脂、例えばキモト産業製のＥＸＣＥＬ
Ｃ０ＡＴはツール本体１の接触面１ａに塗布した後
に、１５０℃以下の雰囲気中で乾燥を行ってから用いる
。This vinyl acetate resin, for example, EXCEL manufactured by Kimoto Sangyo
After C0AT is applied to the contact surface 1a of the tool body 1, it is dried in an atmosphere of 150° C. or lower before use.
なお、この酢酸ビニル樹脂は一定使用期間後に、被膜状
のまま容易に剥離でき、再び塗布して乾燥することによ
り、常に良好な状態で用いることが可能である。Note that this vinyl acetate resin can be easily peeled off as a film after a certain period of use, and can be used in good condition at all times by applying it again and drying it.
このような酢酸ビニル樹脂を接触面１ａにコーティング
したツール本体１で半導体ウェーハ３をハンドリングす
ると、半導体ウェーハ３のツール本体１との接触面の結
晶欠陥の発生は減少し、汚染も防止され、酸化膜耐圧も
向上する。When the semiconductor wafer 3 is handled with the tool body 1 whose contact surface 1a is coated with vinyl acetate resin, the occurrence of crystal defects on the contact surface of the semiconductor wafer 3 with the tool body 1 is reduced, contamination is prevented, and oxidation is prevented. Membrane pressure resistance also improves.
ウェーハがツール本体１に接触した面の酸化膜の耐圧（
Ｖｓｏ）が２２Ｖ以上の良品率を比較すると下記のよう
になり、本発明による一実施例が特に優れていることが
明瞭である。The withstand pressure of the oxide film on the surface where the wafer contacts the tool body 1 (
Comparing the percentages of non-defective products with Vso) of 22 V or more, the results are as follows, and it is clear that one embodiment of the present invention is particularly excellent.
全くハンドリングを行っていないリファレンスウェーハ
・−ｍ−−・−・−・・・−・−・−・−・・−・・−
・・−・−・−−一−−・・−・−・・・−−−−−７
０〜８０％従来のツールでハンドリングしたウェーハ石
英ツール−＝−・−・−・−・−・−・・−・・・・−
−−ｍ−−・−・−・・・−・−・−・−ｍ−−−−−
−・２０％テフロンツール−−−−一−−−・・・−・
−・・−−一−−−−・−−−一−−・−一一一一一・
・５〜１０％本発明のツールでハンドリングしたウェー
ハ石英に酢酸ビニル樹脂を塗布したツール−・−・８０
％テフロンに酢酸ビニル樹脂塗布したツール−・・−−
一−−−−−−−−−・−一−−−−−−−−−−−−
・−・・−・−・−・−７０％〔発明の効果〕
以上説明したように本発明によれば、半導体ウェーハの
ハンドリングツール本体の接触面に酢酸ビニル樹脂を塗
布する極めて簡単な方法により、ハンドリングする半導
体ウェーハが受けるダメージを殆ど無くすことが可能に
なり、極めて高い品質の集積度の高い半導体ウェーハの
製造が可能になる等の利点があり、著しい経済的及び、
信頼性向上の効果が期待でき工業的には極めて有用なも
のである。Reference wafer that has not been handled at all・−m−−・−・−・−・−・−・−・・−・・−
・・−・−・−−１−−・・−・−・・・−−−−−7
0 to 80% wafer quartz tool handled with conventional tool −=−・−・−・−・−・−・・−・・−
−−m−−・−・−・・・−・−・−・−m−−−−−
−・20% Teflon tool−−−−1−−−・・・−・
−・・−−１−−−−・−−−１−−・−１１１１１・
・Tool made by applying vinyl acetate resin to 5-10% wafer quartz handled using the tool of the present invention---80
% Teflon coated with vinyl acetate resin ---
1−−−−−−−−−・−1−−−−−−−−−−−−
・−・・−・−・−・−70% [Effects of the Invention] As explained above, according to the present invention, by an extremely simple method of applying vinyl acetate resin to the contact surface of the semiconductor wafer handling tool body, , it is possible to almost eliminate damage to the semiconductor wafers being handled, and it is possible to manufacture highly integrated semiconductor wafers of extremely high quality.
It is expected to have the effect of improving reliability and is extremely useful industrially.
第１図は本発明による一実施例を示す側断面図、第２図
は従来のハンドリングツールと半導体ウェーハの接触状
態を示す側断面図、
である。
図において、FIG. 1 is a side sectional view showing an embodiment of the present invention, and FIG. 2 is a side sectional view showing a state of contact between a conventional handling tool and a semiconductor wafer. In the figure,
Claims (1)
本体（１）の半導体ウェーハ（３）に接触する接触面（
１ａ）に、酢酸ビニル樹脂（２）をコーティングして行
うことを特徴とする半導体ウェーハのハンドリング方法
。A contact surface (
A method for handling a semiconductor wafer, characterized in that 1a) is coated with a vinyl acetate resin (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038502A JPS63204738A (en) | 1987-02-20 | 1987-02-20 | Method for handling semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038502A JPS63204738A (en) | 1987-02-20 | 1987-02-20 | Method for handling semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63204738A true JPS63204738A (en) | 1988-08-24 |
Family
ID=12527044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62038502A Pending JPS63204738A (en) | 1987-02-20 | 1987-02-20 | Method for handling semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63204738A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5669644A (en) * | 1995-11-13 | 1997-09-23 | Kokusai Electric Co., Ltd. | Wafer transfer plate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842619A (en) * | 1981-09-08 | 1983-03-12 | Kanegafuchi Chem Ind Co Ltd | Silyl-terminated polymer and its production |
-
1987
- 1987-02-20 JP JP62038502A patent/JPS63204738A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842619A (en) * | 1981-09-08 | 1983-03-12 | Kanegafuchi Chem Ind Co Ltd | Silyl-terminated polymer and its production |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5669644A (en) * | 1995-11-13 | 1997-09-23 | Kokusai Electric Co., Ltd. | Wafer transfer plate |
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