JPS6320042B2 - - Google Patents

Info

Publication number
JPS6320042B2
JPS6320042B2 JP59053243A JP5324384A JPS6320042B2 JP S6320042 B2 JPS6320042 B2 JP S6320042B2 JP 59053243 A JP59053243 A JP 59053243A JP 5324384 A JP5324384 A JP 5324384A JP S6320042 B2 JPS6320042 B2 JP S6320042B2
Authority
JP
Japan
Prior art keywords
thin film
film resistor
termination
reflection
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59053243A
Other languages
Japanese (ja)
Other versions
JPS59218002A (en
Inventor
Hidehiko Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59053243A priority Critical patent/JPS59218002A/en
Publication of JPS59218002A publication Critical patent/JPS59218002A/en
Publication of JPS6320042B2 publication Critical patent/JPS6320042B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/24Terminating devices
    • H01P1/26Dissipative terminations
    • H01P1/268Strip line terminations

Description

【発明の詳細な説明】 本発明はマイクロ波IC等に使用されるストリ
ツプ線路用無反射終端に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a non-reflection termination for strip lines used in microwave ICs and the like.

現在マイクロ波装置は、マイクロストリツプ線
路等を用いたIC化により大幅な小形化、高信頼
化が計られつつある。このようなマイクロ波IC
回路中にはサーキユレータをアイソレータ化する
ため、あるいは方向性結合器のアイソレーシヨン
ポート等に非常に厳密な特性の無反射終端が必要
である。
Currently, microwave equipment is becoming significantly smaller and more reliable by using ICs such as microstrip lines. Microwave IC like this
In a circuit, a non-reflection termination with very strict characteristics is required to convert a circulator into an isolator or to an isolation port of a directional coupler.

例えばサーキユレータをアイソレータ化する場
合の無反射終端では無反射終端の反射特性がその
ままアイソレーシヨン特性になり、非常に良好な
特性のものが要求される。例えば無反射終端の入
力VSWRが1.2であればもはや20dB以上のアイソ
レーシヨンは得られない。また同軸一ストリツプ
線路変換部の特性を測定する場合にIC化無反射
終端が使用できると良いが、その場合これらの変
換部の反射VSWR1.1〜1.2程度よりはるかに良好
な無反射終端が必要である。
For example, in the case of a non-reflection termination when a circulator is converted into an isolator, the reflection characteristics of the non-reflection termination become the isolation characteristics as they are, and very good characteristics are required. For example, if the input VSWR of the non-reflection termination is 1.2, it is no longer possible to obtain isolation of 20 dB or more. Also, when measuring the characteristics of coaxial-stripline converters, it would be good to be able to use IC-based non-reflection terminations, but in that case, a non-reflection termination with a reflection VSWR of about 1.1 to 1.2 is required, which is much better than the reflection VSWR of these converters. It is.

第1図は従来の薄膜無反射終端を示すもので、
誘電体基板1上の下面に接地用導体膜2および線
路導体膜3を形成したマイクロストリツプ線路の
終端に特性インピーダンス(通常は50Ω)に等し
い抵抗値を有する薄膜抵抗4を形成し、短絡用導
体5を用いて、接地を行つていた。この場合、薄
膜抵抗の形状は高周波特性と無関係に設計されて
おり、aのようにマイクロストリツプ導体と同じ
幅にして、簡単化したり、bのように網目状の菱
形として電力特性を良好にしていた。しかし、抵
抗膜自体にも微少なインダクタンス分があり、ま
た、それと接地導体間にも微少な容量分が存在す
る。従つて非常に低い周波数では、これらの不要
リアクタンス分は無視できるが、マイクロ波のよ
うな高周波においては、抵抗値に対して無視でき
なくなり、不要な反射を生ずるので問題である。
UHF帯のような低い周波数においても、大電力
用無反射終端は、寸法が大きくなり、それにとも
なつて、その不要インダクタンスあるいは不要容
量は無視できなくなる。
Figure 1 shows a conventional thin film non-reflective termination.
A thin film resistor 4 having a resistance value equal to the characteristic impedance (usually 50Ω) is formed at the end of a microstrip line in which a grounding conductor film 2 and a line conductor film 3 are formed on the lower surface of a dielectric substrate 1, and a short circuit is established. Grounding was performed using a conductor 5. In this case, the shape of the thin film resistor is designed without regard to high frequency characteristics; it can be simplified by making it the same width as the microstrip conductor as in a, or it can be made into a mesh-like diamond shape to improve power characteristics as in b. I was doing it. However, the resistive film itself has a small amount of inductance, and there is also a small amount of capacitance between it and the ground conductor. Therefore, at very low frequencies, these unnecessary reactances can be ignored, but at high frequencies such as microwaves, they can no longer be ignored with respect to the resistance value, causing unnecessary reflections, which is a problem.
Even at low frequencies such as the UHF band, high-power non-reflection terminations become larger in size, and their unnecessary inductance or capacitance cannot be ignored.

従来、これらを含めた無反射終端の設計法が不
明であつたため、マイクロ波帯で充分良好な、保
証された特性のIC用無反射終端を用いることが
できなかつた。従つて、第1図のような無反射終
端は、それほど厳密な特性を要求されない箇所で
のみ使用され、厳密な特性の必要な所では一度コ
ネクタを用いて同軸に変換した後、同軸型無反射
終端を用いる場合が多かつた。
Conventionally, it has been unclear how to design non-reflection terminations including these, and it has not been possible to use non-reflection terminations for ICs with guaranteed characteristics that are sufficiently good in the microwave band. Therefore, the non-reflective termination shown in Figure 1 is used only in places where very strict characteristics are not required, and in places where strict characteristics are required, the coaxial type non-reflective termination is used after converting to coaxial using a connector. Termination was often used.

本願の目的は、不要リアクタンス分を含めた無
反射終端の設計法に基づき、回路的にも、製作的
にもマイクロ波ICに適用が可能な、極めて良好
な特性の無反射終端を提供することにある。
The purpose of this application is to provide a non-reflection termination with extremely good characteristics that can be applied to microwave ICs in terms of circuitry and manufacturing, based on a design method for a non-reflection termination that includes unnecessary reactance. It is in.

本発明によれば、特性インピーダンスZpのスト
リツプ線路の終端を薄膜抵抗を通して短絡した無
反射終端において薄膜抵抗の抵抗値を特性インピ
ーダンスZpに合せ、かつ該薄膜抵抗部に並列に、
該薄膜抵抗を同一形状の導体膜で置き換えたとき
の単位長当りのインダクタンスをLp、キヤパシタ
ンスをCp、長さをlとして、概略 が成り立つごとく容量Caを挿入したことを特徴
とするストリツプ線路用無反射終端が得られる。
According to the present invention, the resistance value of the thin film resistor is adjusted to the characteristic impedance Z p at the non-reflection termination in which the end of the strip line with the characteristic impedance Z p is short-circuited through the thin film resistor, and in parallel with the thin film resistor section,
When the thin film resistor is replaced with a conductor film of the same shape, the inductance per unit length is L p , the capacitance is C p , and the length is l, approximately. A reflection-free termination for a strip line is obtained, which is characterized in that a capacitor C a is inserted so that the following holds true.

以下本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第2図は本発明の説明に用いる無反射終端を示
す斜視図である。同図において無反射終端は、誘
電体基板1、接地用導体膜2、線路用導体膜3、
薄膜抵抗4、短絡用導体5からなつている。
FIG. 2 is a perspective view showing a non-reflective termination used to explain the present invention. In the figure, the non-reflective termination includes a dielectric substrate 1, a grounding conductor film 2, a line conductor film 3,
It consists of a thin film resistor 4 and a shorting conductor 5.

今、長さlの図aのような薄膜抵抗を損失ある
分布定数線路と考え、その入力インピーダンスZi
を計算すると、 Zi=ZR tanh γl (1) となる。但し、ZRはこの抵抗値特性インピーダン
ス、γはその伝播定数であり、角周波数をω、薄
膜抵抗の単位長当りの抵抗をRp、インダクタン
スをLp、接地との容量をCpとすれば γ=√ppp) (3) となる。但し√−1=jである。
Now, consider a thin film resistor of length l as shown in diagram a as a lossy distributed constant line, and its input impedance Z i
When calculated, Z i =Z R tanh γl (1). However, Z R is the characteristic impedance of this resistance value, γ is its propagation constant, ω is the angular frequency, R p is the resistance per unit length of the thin film resistor, L p is the inductance, and C p is the capacitance to ground. Ba γ=√ p ( p + p ) (3). However, √-1=j.

今lは充分小さく、薄膜抵抗が集中定数的と考
え、γl≪1とすれば(2)、(3)式を用いて(1)式は次の
ように変形される。
If l is sufficiently small and the thin film resistance is considered to be a lumped constant, and γl≪1, then equation (1) can be transformed as follows using equations (2) and (3).

Zi=(Rp+jωLp)l{1−jωCp(Rp+jωLp)l
2/3}(4) さらに(4)式において、伝播定数値は小さいので
次のように変形される。
Z i = (R p +jωL p )l{1−jωC p (R p +jωL p )l
2 /3} (4) Furthermore, since the propagation constant value in equation (4) is small, it is transformed as follows.

Zi=Rol+jωLol/1+jωCol/3(Rp1+jωLpl)(5
) 上式より薄膜抵抗部は完全に集中定数RLC素
子を用いて第3図のような等価回路で表わされ
る。ところで、先に仮定した集中定数的な条件
ω3CpLp12≪1を用いると(4)式はさらに次のよう
になる。
Z i = Rol + jωLol/1 + jωCol/3 (R p 1 + jωL p l) (5
) From the above equation, the thin film resistor section can be completely represented by an equivalent circuit as shown in FIG. 3 using lumped constant RLC elements. By the way, if we use the lumped constant condition ω 3 C p L p 1 2 <<1 assumed earlier, equation (4) becomes further as follows.

Zi=Rp1+jωLpl(1−Cp/Lp Rp 2l2/3) 周波数特性のない、良好な無反射終端の条件は
Zi=Zpであるから、 Rpl=Zp (6) の関係を保てば良好な無反射終端が得られる。50
Ωストリツプ線路導体と同一軸の薄膜抵抗を用い
たとき、不要のリアクタンスが生ずるのは、この
場合の容量、Cplが(7)式を満足するだけ充分大き
くないからと考えられる。
Z i = R p 1 + jωL p l (1-C p /L p R p 2 l 2 /3) The conditions for a good reflection-free termination without frequency characteristics are
Since Z i =Z p , R p l=Z p (6) If the relationship is maintained, a good reflection-free termination can be obtained. 50
When a thin film resistor coaxial with the Ω strip line conductor is used, unnecessary reactance occurs because the capacitance C p l in this case is not large enough to satisfy equation (7).

したがつて、薄膜抵抗部に新しく第3図点線で
示したごとく別の並列調整用容量Caを付加し(6)
式とともに となるようにすれば、薄膜抵抗部の幅が任意の場
合にも、良好な無反射終端が得られる。
Therefore, we added another parallel adjustment capacitor C a to the thin film resistor section as shown by the dotted line in Figure 3 (6)
with the ceremony If the width of the thin film resistor section is set as follows, a good reflection-free termination can be obtained even if the width of the thin film resistor section is arbitrary.

第4図aは上記の原理による本発明の第1の実
施例を示す図で、薄膜抵抗4の幅を任意に広げ凸
部9により(8)式を満たす所要の容量Caを設けた
ものである。bは薄膜抵抗4上に別の誘電体10
を置いて、所要の容量Caを設けたもの、cはこ
の調整用誘電体10上に薄膜抵抗4を形成したも
ので、誘電体10の厚みおよび比誘電率を調整し
(8)式を満たせば、実用し易い。
FIG. 4a shows a first embodiment of the present invention based on the above principle, in which the width of the thin film resistor 4 is arbitrarily widened and the convex portion 9 provides the required capacitance C a that satisfies equation (8). It is. b is another dielectric 10 on the thin film resistor 4
, and the required capacitance C a is provided. c is the one in which the thin film resistor 4 is formed on this adjusting dielectric 10, and the thickness and relative dielectric constant of the dielectric 10 are adjusted.
If formula (8) is satisfied, it is easy to put it into practical use.

第5図は、さらに別の第2の実施例を示す図
で、(6)式を満たす薄膜抵抗4の上に、調整ねじ1
1を接近させ、式(8)を満たす所要の容量Caを付
加するものである。この場合にはLplも変動する
が、パターンの厳密な設計をしなくても、ねじに
より特性を観測しつつ必要量Caを与えることが
できるので実用的である。55は短絡用端子であ
る。
FIG. 5 is a diagram showing yet another second embodiment, in which an adjusting screw 1 is mounted on a thin film resistor 4 that satisfies equation (6).
1 and add the required capacitance C a that satisfies equation (8). In this case, L p l also varies, but it is practical because it is possible to provide the required amount C a while observing the characteristics of the screw without having to strictly design the pattern. 55 is a short circuit terminal.

第4図、第5図においてマイクロストリツプ型
式あるいはサスペンド型トリプレート型式どちら
かの実施例しか示さなかつたが、本願の原理が図
示以外のそれぞれトリプレート型式、マイクロス
トリツプ型式のものにも適用できることは言うま
でもない。
Although FIGS. 4 and 5 only show examples of either the microstrip type or the suspended triplate type, the principle of the present application can be applied to the triplate type and microstrip type, respectively, other than those shown. Needless to say, it can also be applied.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の薄膜無反射終端を示す図で、
a,bは別々の平面図、cはそれらの中心線
AA′に関する断面図である。1は誘電体基板、2
は接地用導体膜、3は線路導体膜、4は薄膜抵
抗、5は短絡用導体膜である。 第2図は本発明の説明に用いる無反射終端を示
す斜視図である。第1図と同一の構成要素は同一
記号を付して示した。(以下同様)第3図は説明
用等価回路図である。第4図は第1の実施例を示
す図で、a,bは平面図、cは断面図である。9
は線路導体凸部、10は誘電体である。 第5図は第2の実施例を示す断面図で、6,
6′は接地導体、11は調整ねじ、55は短絡用
端子である。
Figure 1 shows a conventional thin film non-reflective termination.
a, b are separate plan views, c is their center line
It is a cross-sectional view regarding AA'. 1 is a dielectric substrate, 2
3 is a conductor film for grounding, 3 is a line conductor film, 4 is a thin film resistor, and 5 is a conductor film for shorting. FIG. 2 is a perspective view showing a non-reflective termination used to explain the present invention. Components that are the same as those in FIG. 1 are indicated with the same symbols. (Similarly below) FIG. 3 is an explanatory equivalent circuit diagram. FIG. 4 is a diagram showing the first embodiment, in which a and b are a plan view and c is a sectional view. 9
1 is a line conductor convex portion, and 10 is a dielectric. FIG. 5 is a cross-sectional view showing the second embodiment.
6' is a grounding conductor, 11 is an adjustment screw, and 55 is a short-circuit terminal.

Claims (1)

【特許請求の範囲】 1 特性インピーダンスZpのストリツプ線路の終
端を薄膜抵抗を通して短絡した無反射終端におい
て薄膜抵抗の抵抗値を特性インピーダンスZpに合
せ、かつ該薄膜抵抗部に並列に、該薄膜抵抗を同
一形状の導体膜で置き換えたときの単位長当りの
インダクタンスをLp、キヤパシタンスをCp、長さ
をlとして、概略 が成り立つごとく容量Caを挿入したことを特徴
とするストリツプ線路用無反射終端。
[Scope of Claims] 1. A non-reflective termination in which the terminal end of a strip line with a characteristic impedance Z p is short-circuited through a thin film resistor, the resistance value of the thin film resistor is adjusted to the characteristic impedance Z p , and the thin film resistor is connected in parallel to the thin film resistor. When the resistor is replaced with a conductor film of the same shape, the inductance per unit length is L p , the capacitance is C p , and the length is l. A non-reflection termination for a strip line, characterized in that a capacitor C a is inserted so that the following holds true.
JP59053243A 1984-03-19 1984-03-19 Resistive terminator for strip line Granted JPS59218002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59053243A JPS59218002A (en) 1984-03-19 1984-03-19 Resistive terminator for strip line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59053243A JPS59218002A (en) 1984-03-19 1984-03-19 Resistive terminator for strip line

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51158856A Division JPS5930323B2 (en) 1976-12-27 1976-12-27 Reflection-free termination for strip line

Publications (2)

Publication Number Publication Date
JPS59218002A JPS59218002A (en) 1984-12-08
JPS6320042B2 true JPS6320042B2 (en) 1988-04-26

Family

ID=12937348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59053243A Granted JPS59218002A (en) 1984-03-19 1984-03-19 Resistive terminator for strip line

Country Status (1)

Country Link
JP (1) JPS59218002A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247603A (en) * 1986-04-15 1987-10-28 Fujitsu Ltd Packing structure for chip resistor
JP2631883B2 (en) * 1988-10-20 1997-07-16 三菱電機株式会社 RF matching termination device

Also Published As

Publication number Publication date
JPS59218002A (en) 1984-12-08

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