JPS59218002A - Resistive terminator for strip line - Google Patents

Resistive terminator for strip line

Info

Publication number
JPS59218002A
JPS59218002A JP59053243A JP5324384A JPS59218002A JP S59218002 A JPS59218002 A JP S59218002A JP 59053243 A JP59053243 A JP 59053243A JP 5324384 A JP5324384 A JP 5324384A JP S59218002 A JPS59218002 A JP S59218002A
Authority
JP
Japan
Prior art keywords
thin film
film resistor
characteristic impedance
resistor
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59053243A
Other languages
Japanese (ja)
Other versions
JPS6320042B2 (en
Inventor
Hidehiko Kato
英彦 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59053243A priority Critical patent/JPS59218002A/en
Publication of JPS59218002A publication Critical patent/JPS59218002A/en
Publication of JPS6320042B2 publication Critical patent/JPS6320042B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/24Terminating devices
    • H01P1/26Dissipative terminations
    • H01P1/268Strip line terminations

Landscapes

  • Non-Reversible Transmitting Devices (AREA)
  • Waveguides (AREA)

Abstract

PURPOSE:To apply the resistive terminator to a microwave IC in terms of the circuit and manufacture by matching the resistance value of a thin film resistor to the characteristic impedance and inserting a prescribed value of capacitor in parallel with a thin film resistance part. CONSTITUTION:The end of a strip line having a characteristic impedance Z0 is short-circuited through a thin film resistor 4 and the resistance value of the resistor 4 is matched to the characteristic impedance Z0. Further, the width of the resistor 4 is expanded optionally so as to establish nearly the relation of [L0l/(C0l+Ca0)]<1/2>=Z0/(3)<1/2> and a required capacitance Ca satisfying the equa tion above is inserted to a projection 9, where L0 is the inductance per unit length, C0 is the capacitance and (l) is the length.

Description

【発明の詳細な説明】 本発明はマイクロ波10等に使用されるストリップ線路
用無反射終端に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a non-reflection termination for a strip line used in a microwave 10 or the like.

現在マイクロ波装置は、マイクdストリップ線路等を用
いたIC化により大幅な小形化、高信頼化が計られつつ
ある。このようなマイクロ波IC回路中にはサーキュレ
ータをアイソレータ化するため、あるいは方向性結合器
のアイソレーションポート等に非常に厳密な特性の無反
射終端が必要である。
Currently, microwave devices are becoming significantly smaller and more reliable through the use of ICs using microphone D-strip lines and the like. In such a microwave IC circuit, a non-reflection termination with very strict characteristics is required for converting a circulator into an isolator or for an isolation port of a directional coupler.

例えばサーキュレータをアイソレータ化する場合の無反
射終端では無反射終端の反射特性がそのままアイソレー
ジ日ン特性になり、非常に良好な特性のものが要求され
る。例えば無反射終端の入力vSW几が1.2 であれ
ばもはや20dB以上のアイソレーションは得られない
。また同軸−ストリップ線路変換部の特性を測定する場
合にIC化無反射終端が使用できると良いが、その場合
これらの変換部の反射V8WR1,1〜1.2  程度
よりはるかに良好な無反射終端が必要である。
For example, when a circulator is turned into an isolator, the reflection characteristics of the non-reflection termination directly become the isolation solar characteristics, and very good characteristics are required. For example, if the input vSW of the non-reflection termination is 1.2, it is no longer possible to obtain isolation of 20 dB or more. Also, when measuring the characteristics of coaxial-stripline converters, it would be good to be able to use IC-based non-reflective terminations, but in that case, it would be better to use non-reflective terminations that are much better than the reflection V8WR of these converters. is necessary.

第1図は従来の薄膜無反射終端を示すもので、誘電体基
板1上の下面に接地用導体膜2および線路導体膜3を形
成したマイクロストリップ線路の終端に特性インピーダ
ンス(通常は50Ω)に等しい抵抗値を有する薄膜抵抗
4を形成し、短絡用導体5を用いて、接地を行っていた
。この場合、薄膜抵抗の形状は高周波特性と無関係に設
計されており、(a)のよう番こマイクロストリップ導
体と同じ幅にして、簡単化したり、(blのように網目
状の菱形として電力特性を良好にしていた。しかし、抵
抗膜自体にも微少なインダクタンス分があり、また、そ
れと接地導体間にも微少な容量分が存在する。従って非
常に低い周波数では、これらの不要リアクタンス分は無
視できるが、マイクロ波のような高周波においては、抵
抗値に対して無視できなくなり、不要な反射を生ずるの
で問題である。
Figure 1 shows a conventional thin film non-reflective termination, in which a grounding conductor film 2 and a line conductor film 3 are formed on the lower surface of a dielectric substrate 1. At the end of a microstrip line, a characteristic impedance (usually 50Ω) is applied. Thin film resistors 4 having equal resistance values were formed and grounding was performed using a shorting conductor 5. In this case, the shape of the thin film resistor is designed without regard to the high frequency characteristics; it may be simplified by making it the same width as the microstrip conductor as shown in (a), or it may be made into a mesh-like diamond shape as shown in (bl) to improve the power characteristics. However, the resistive film itself has a small amount of inductance, and there is also a small amount of capacitance between it and the ground conductor. Therefore, at very low frequencies, these unnecessary reactances can be ignored. However, at high frequencies such as microwaves, the resistance value cannot be ignored and unnecessary reflections occur, which is a problem.

UHF帯のような低い周波数においても、大電力用無反
射終端は、寸法が大きくなり、それにともなって、その
不要インダクタンスあるいは不要容量は無視できなくな
る。
Even at low frequencies such as the UHF band, the size of high-power non-reflection terminations increases, and as a result, their unnecessary inductance or unnecessary capacitance cannot be ignored.

従来、これらを含めた無反射終端の設計法が不明であっ
たため、マイクロ波帯で充分良好な、保証された特性の
IC用無反射終端を用いることができなかった。従って
、第1図のような無反射終端は、それほど厳密な特性を
要求されない箇所でのみ使用され、厳密な特性の必要な
所では一度コネクタを用いて同軸に変換した後、同軸型
無反射終端を用いる場合が多かった。
Conventionally, it has been unclear how to design a non-reflection termination including these, so it has not been possible to use a non-reflection termination for an IC with guaranteed characteristics that are sufficiently good in the microwave band. Therefore, the non-reflection termination shown in Figure 1 is used only in places where very strict characteristics are not required, and in places where strict characteristics are required, after converting to coaxial using a connector, a coaxial type non-reflection termination is used. was often used.

本願の目的は、不要リアクタンス分を含めた無反射終端
の設計法に基づき、回路的にも、製作的にもマイクロ波
ICに適用が可能な、極めて良好な特性の無反射終端を
提供することにある。
The purpose of this application is to provide a non-reflection termination with extremely good characteristics that can be applied to microwave ICs in terms of circuitry and manufacturing, based on a design method for a non-reflection termination that includes unnecessary reactance. It is in.

本発明によれば、特性インピーダンスZoのストリップ
線路の終端を薄膜抵抗を通して短絡した無反射終端にお
いて、薄膜抵抗の抵抗値を特性インピーダンスzoに合
せ、かつ該薄膜抵抗部に並列に、該薄膜抵抗を同一形状
の導体膜で置き換えたときの単位長当りのインダクタン
スを■)0、キャパシタンスをco、長さをlとして、
概略が成り立つごとく容量Caを挿入したことを特徴と
するストリップ線路用無反射終端が得られる。
According to the present invention, in the non-reflection termination in which the terminal end of a strip line with a characteristic impedance Zo is short-circuited through a thin film resistor, the resistance value of the thin film resistor is adjusted to the characteristic impedance zo, and the thin film resistor is connected in parallel to the thin film resistor part. When replacing with a conductor film of the same shape, the inductance per unit length is 0, the capacitance is co, and the length is l,
A reflection-free termination for a strip line is obtained, which is characterized in that a capacitor Ca is inserted so that the outline holds true.

以下本発明の実施例を図面を用いて説明する。Embodiments of the present invention will be described below with reference to the drawings.

第2図は本発明の説明に用いる無反射終端を示す斜視図
である。同図において無反射終端は、誘電体基板1、接
地用導体膜2、線路用導体膜3、薄膜抵抗4、短絡用導
体5からなっている。
FIG. 2 is a perspective view showing a non-reflective termination used to explain the present invention. In the figure, the non-reflective termination is comprised of a dielectric substrate 1, a grounding conductor film 2, a line conductor film 3, a thin film resistor 4, and a shorting conductor 5.

今、長さlの図(a)のような薄膜抵抗を損失ある分布
定数線路と考え、その入力インピーダンスZ。
Now, consider a thin film resistor of length l as shown in Figure (a) as a lossy distributed constant line, and calculate its input impedance Z.

を計算すると、 zi=ZB   tanh  rll       (
1)となる、但し、ZRはこの抵抗値特性インピーダン
ス、γはその伝播定数であり、角周波数をω、薄膜抵抗
の単位長当りの抵抗を式、インダクタンスをLo、接地
との容量をcoとすれば )       γ=6−訳l冒■δ   (3)とな
る。但しv”T=jである。
When calculating, zi=ZB tanh rll (
1), where ZR is the resistance characteristic impedance, γ is its propagation constant, angular frequency is ω, resistance per unit length of the thin film resistor is the formula, inductance is Lo, and capacitance with ground is co. Then) γ=6−translator■δ (3). However, v''T=j.

今lは充分小さく、薄膜抵抗が集中定数的と考え、γl
<Aとすればf2) 、 f3)式を用いて(1)式は
次のように変形される、 (4) さらに(4)式において、伝播定数値は小さいので次の
ように変形される。
Now l is sufficiently small and considering that the thin film resistance is a lumped constant, γl
If <A, equation (1) is transformed as follows using equations f2) and f3). (4) Furthermore, in equation (4), since the propagation constant value is small, it is transformed as follows. .

上式より薄膜抵抗部は完全に集中定数几LC素子を用い
て第3図のような等画回路で表わされる。
From the above equation, the thin film resistor section can be completely represented by an isometric circuit as shown in FIG. 3 using lumped constant LC elements.

この場合 几oz = zo+61 の関係を保てば良好な無反射終端が得られる。5゜Ωス
) IJツブ線路導体と同一軸の薄膜抵抗を用いたとき
、不要のりアクタンスが生ずるのは、この場合の容量、
Col  が(7)式を満足するだけ充分大きくないか
らと考えられる。
In this case, if the relationship oz=zo+61 is maintained, a good reflection-free termination can be obtained. 5゜Ω) When using a thin film resistor coaxial with the IJ tube line conductor, the reason why unnecessary glue actance occurs is due to the capacitance in this case,
This is probably because Col is not large enough to satisfy equation (7).

したがって、薄膜抵抗部に〃[シ<第3図点線で示した
ごとく別の並列調整用容量Caを付加しく6)式ととも
に となるようにすれば、薄膜抵抗部の幅が任意の場合にも
、良好な無反射終端が得られる。
Therefore, by adding another parallel adjustment capacitor Ca to the thin film resistor section as shown by the dotted line in Figure 3, and formula 6) is obtained, even when the width of the thin film resistor section is arbitrary, , a good reflection-free termination can be obtained.

第4図1a)は上記の原理による本発明の第1の実施例
を示す図で、薄膜抵抗4の幅を任意に広げ凸部9により
(8)式を満だV所要の容量Caを設けたものである。
FIG. 4 1a) is a diagram showing a first embodiment of the present invention based on the above-mentioned principle, in which the width of the thin film resistor 4 is arbitrarily widened and the convex portion 9 is used to provide the required capacitance Ca that satisfies the equation (8). It is something that

(blは薄膜抵抗4上に別の誘電体loを置いて、所要
の容量Caを設けたもの、tc)はこの調整用誘電体l
O上に薄膜抵抗4を形成したもので、誘電体10の厚み
および比誘電率を調整しく8)式を満たせば、実用し易
い。
(bl is another dielectric material lo placed on the thin film resistor 4 to provide the required capacitance Ca, tc) is this adjustment dielectric material l
A thin film resistor 4 is formed on O, and it is easy to put it into practical use if the thickness and dielectric constant of the dielectric 10 are adjusted and formula 8) is satisfied.

第5図は、さらに別の第2の実施例を示す図で、式(6
)を満たす薄膜抵抗4の上番こ、調整ねじ11を接近さ
せ、式(8)を満たす所要の容量Caを付加するもので
ある。この場合にはLol  も変動するが。
FIG. 5 is a diagram showing still another second embodiment, in which equation (6
), the adjustment screw 11 is brought close to the top of the thin film resistor 4 that satisfies (8), and the required capacitance Ca that satisfies equation (8) is added. In this case, Lol also changes.

パターンの厳密な設計をしなくても、ねじ番こより特性
を観測しつつ必要iCaを与えることができるので実用
的である。55は短絡用端子である。
It is practical because the required iCa can be provided while observing the characteristics from the screw number without having to strictly design the pattern. 55 is a short circuit terminal.

第4図、第5図においてマイクロストリップ型式あるい
はサスペンド型トリプレート型式どちらかの実施ψlし
か示さなかったが、本願の原理が図示以外のそれぞれト
リプレート型式、マイクロストリップ型式のものにも適
用できることは言うまでもない。
Although FIGS. 4 and 5 only show the implementation of either the microstrip type or the suspended triplate type, the principles of the present application can also be applied to the triplate type and microstrip type, respectively, other than those shown. Needless to say.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の薄膜無反射終端を示す図で、(a)。 (blは別々の平面図、(C)はそれらの中心線AA’
に関する断面図である。1は誘電体基板、2は接地用導
体膜、3は線路導体膜、4は薄膜抵抗、5は短絡用導体
膜である。 第2図は本発明の説明に用いる無反射終端を示す斜視図
である。第1因と同一の構成要素は同一記号を付して示
した。(以下同様) 第3図は説明用等価回路図である。 第4図は第1の実施例を示す図で、ta) 、 (bl
は平面図、(C)は断面図である。9は線路導体凸部、
10は誘電体である。 第5図は第2の実施例を示す断面図で、6.6’は接地
導体、11は調整ねじ、55は短絡用端子である。 71図 AA’断面図 第2図 73図
FIG. 1 is a diagram showing a conventional thin film non-reflective termination (a). (bl is separate plan view, (C) is their center line AA'
FIG. 1 is a dielectric substrate, 2 is a grounding conductor film, 3 is a line conductor film, 4 is a thin film resistor, and 5 is a shorting conductor film. FIG. 2 is a perspective view showing a non-reflective termination used to explain the present invention. Components that are the same as those for the first factor are indicated with the same symbols. (Similarly below) FIG. 3 is an explanatory equivalent circuit diagram. FIG. 4 is a diagram showing the first embodiment, in which ta), (bl
is a plan view, and (C) is a cross-sectional view. 9 is a line conductor convex portion;
10 is a dielectric. FIG. 5 is a sectional view showing the second embodiment, in which 6.6' is a grounding conductor, 11 is an adjustment screw, and 55 is a shorting terminal. Figure 71 AA' cross section Figure 2 Figure 73

Claims (1)

【特許請求の範囲】 特性インピーダンスZoのストリップ線路の終端を薄膜
抵抗を通して短絡した無反射終端において薄膜抵抗の抵
抗値を特性インピーダンスZoに合せ、かつ該薄膜抵抗
部に並列に、該薄膜抵抗を同一形状の導体膜で置き換え
たときの単位長当りのインダクタンスをLo、キャパシ
タンスをco、長さをlとして、概略 が成り立つごとく容量Caを挿入したことを特徴とする
ストリップ線路用無反射終端。
[Claims] The resistance value of the thin film resistor is adjusted to the characteristic impedance Zo at the non-reflection termination where the end of the strip line with the characteristic impedance Zo is short-circuited through the thin film resistor, and the same thin film resistor is connected in parallel to the thin film resistor part. A non-reflection termination for a strip line, characterized in that a capacitance Ca is inserted so that an outline holds true when the inductance per unit length is Lo, the capacitance is co, and the length is l when replaced with a shaped conductor film.
JP59053243A 1984-03-19 1984-03-19 Resistive terminator for strip line Granted JPS59218002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59053243A JPS59218002A (en) 1984-03-19 1984-03-19 Resistive terminator for strip line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59053243A JPS59218002A (en) 1984-03-19 1984-03-19 Resistive terminator for strip line

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51158856A Division JPS5930323B2 (en) 1976-12-27 1976-12-27 Reflection-free termination for strip line

Publications (2)

Publication Number Publication Date
JPS59218002A true JPS59218002A (en) 1984-12-08
JPS6320042B2 JPS6320042B2 (en) 1988-04-26

Family

ID=12937348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59053243A Granted JPS59218002A (en) 1984-03-19 1984-03-19 Resistive terminator for strip line

Country Status (1)

Country Link
JP (1) JPS59218002A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247603A (en) * 1986-04-15 1987-10-28 Fujitsu Ltd Packing structure for chip resistor
JPH02111101A (en) * 1988-10-20 1990-04-24 Mitsubishi Electric Corp Rf matching terminator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247603A (en) * 1986-04-15 1987-10-28 Fujitsu Ltd Packing structure for chip resistor
JPH0343801B2 (en) * 1986-04-15 1991-07-03 Fujitsu Ltd
JPH02111101A (en) * 1988-10-20 1990-04-24 Mitsubishi Electric Corp Rf matching terminator

Also Published As

Publication number Publication date
JPS6320042B2 (en) 1988-04-26

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