JPS63199436A - Electronic device - Google Patents

Electronic device

Info

Publication number
JPS63199436A
JPS63199436A JP62031454A JP3145487A JPS63199436A JP S63199436 A JPS63199436 A JP S63199436A JP 62031454 A JP62031454 A JP 62031454A JP 3145487 A JP3145487 A JP 3145487A JP S63199436 A JPS63199436 A JP S63199436A
Authority
JP
Japan
Prior art keywords
copper
bonding
wire
pellet
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62031454A
Other languages
Japanese (ja)
Inventor
Kazuhiro Tsurumaru
鶴丸　和弘
Isao Araki
荒木　勲
Kazuo Hatori
羽鳥　和夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62031454A priority Critical patent/JPS63199436A/en
Publication of JPS63199436A publication Critical patent/JPS63199436A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve bondability and the reliability of a bonding connecting section even when a copper wire is used by forming the surface of at least a bonding pad in an electrical wiring for a pellet by employing the same material as the copper group bonding wire. CONSTITUTION:The surface of at least a bonding pad 16 in an electrical wiring 10 for a pellet 8 is shaped by a copper group material, and a wire 17 consisting of the copper group material is bonded onto the surface of the bonding pad 16. The electrical wiring 10 with a lower layer wiring 11 and an upper layer wiring 13 is formed to the upper layer section of the pellet 8, into which an integrated circuit 9 is assembled, through an under-cloth wiring method through an inter-layer insulating film 13, and the wiring 10 is shaped through an evaporation method, etc. by employing the copper group material wholly. One ends of the bonding wires 17 composed of the copper group material are each bonded onto the bonding pad 16 made up of the copper group material in the pellet 8, and the other ends of the wires 17 are each bonded onto a section 5a to be bonded for an inner lead 5.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電子装置、特に、そのワイヤボンディング技
術に関し、例えば、ボンディングワイヤとして銅系材料
を素材とするワイヤ（以下、銅ワイヤという。）が使用
されている半導体集積回路装置（以下、ＩＣという。）
に利用して有効なものに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to electronic devices, and in particular to wire bonding techniques thereof, and for example, wires made of copper-based materials (hereinafter referred to as copper wires) as bonding wires. Semiconductor integrated circuit device (hereinafter referred to as IC) in which
Concerning what is effective when used.

〔従来の技術〕[Conventional technology]

金銀の消費を節約しつつペレットとリードフレームとの
電気的接続を確保するＩＣとして、銅からなるボンディ
ングワイヤがペレット上のアルミニュームからなるボン
ディングパッドおよびリードフレーム上にそれぞれボン
ディングされているものがある。As an IC that secures electrical connection between the pellet and the lead frame while saving consumption of gold and silver, there is an IC in which a bonding wire made of copper is bonded to a bonding pad made of aluminum on the pellet and on the lead frame, respectively. .

なお、銅ワイヤボンディング技術を述べである例として
は、プレスジャーナル社発行ｒｓｅｍｉｃｏｎｄｕｃｔ
ｏ’ｒ　　ｗｏｒｌｄ　　１９Ｂ５年１０月号」昭和６
０年１０月２０日発行　Ｐ８０〜Ｐ８７、がある。An example of copper wire bonding technology is published by Press Journal Co., Ltd.
o'r world October 19B5 issue" Showa 6
Published on October 20, 2015. There are pages 80 to 87.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、このようにボンディングワイヤに銅ワイヤが使
用されているＩＣにおいては、銅ワイヤとペレット上の
アルミニュームパッドとの接合部に高温放置試験等によ
り銅とアルミニュームとの合金層が生成されるため、熱
ストレスによる機械的応力により断線が発生したり、ま
た、電気抵抗が増加する傾向になるという問題点がある
ことが、本発明者によって明らかにされた。However, in ICs in which copper wire is used as the bonding wire, an alloy layer of copper and aluminum is formed at the joint between the copper wire and the aluminum pad on the pellet during high-temperature storage tests, etc. The inventor of the present invention has revealed that, as a result, mechanical stress caused by thermal stress causes wire breakage, and electrical resistance tends to increase.

本発明の目的は、銅ワイヤを用いた場合であってもボン
ダビリティ−およびボンディング接続部の信頼性を向上
することができる電子装置を提供することにある。An object of the present invention is to provide an electronic device that can improve bondability and reliability of bonding connections even when copper wire is used.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔問題点を解決するための手段〕[Means for solving problems]

本願において開示される発明のうち代表的なものの概要
を説明すれば、次の通りである。An overview of typical inventions disclosed in this application is as follows.

すなわち、ペレットの電気配線における少なくともボン
ディングパッドの表面を銅からなるボンディングワイヤ
と同一の材質を用いて形成するようにしたものである。That is, at least the surface of the bonding pad in the electrical wiring of the pellet is formed using the same material as the bonding wire made of copper.

〔作用〕[Effect]

前記した手段によれば、ボンディングワイヤとボンディ
ング部とが同一の銅系材料層により接合されるため、合
金層が生成されるのを回避することができ、銅ワイヤを
用いた場合であってもボンダビリティ−を高めることが
できる。According to the above-described means, since the bonding wire and the bonding part are bonded by the same copper-based material layer, it is possible to avoid the formation of an alloy layer, and even when copper wire is used, Bondability can be improved.

〔実施例〕〔Example〕

第１図は本発明の一実施例であるＩＣを示す拡大部分断
面図、第２図はそのＩＣの縦断面図である。FIG. 1 is an enlarged partial sectional view of an IC that is an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of the IC.

本実施例において、電子装置としてのＩＣＩはデュアル
・イン・ライン・パッケージ（Ｄ　ｒ　Ｐ’）型に構成
されており、リードフレーム２を備えている。リードフ
レーム２は低絽燐青銅を用いてプレス加工等により一体
的に打ち抜き成形されている。リードフレーム２の表面
には被膜としての銅めっき膜３が、硫酸銅を用いためっ
き加工により全面に略均−に薄く被着されており、銅め
っき股３の厚さは約１〜８μｍになるように設定されて
いる。また、銅めっき膜３は比較的光沢が高くならない
ように、光沢増加材を混入されずにめっき加工されてお
り、また、ベンゾトリアゾール等のような変色（酸化）
防止剤を用いて変色防止処理が施されている。In this embodiment, the ICI as an electronic device is configured in a dual-in-line package (D r P') type and includes a lead frame 2 . The lead frame 2 is integrally stamped out of low-strength phosphor bronze by press working or the like. On the surface of the lead frame 2, a copper plating film 3 as a coating is applied thinly and almost evenly over the entire surface by plating using copper sulfate, and the thickness of the copper plating crotch 3 is approximately 1 to 8 μm. It is set to be. In addition, the copper plating film 3 is plated without adding any gloss-increasing materials so that the gloss does not become relatively high.
Discoloration prevention treatment is applied using an inhibitor.

リードフレーム２はタブ４と、タブ４を取り囲むように
放射状に配設されている複数本のインナリード５と、イ
ンナリード５に一体的にそれぞれ連設されているととも
に、両側部に２列に整列されているアウタリード６とを
備えており、タブ４上には集積回路９　（一部のみ図示
）が形成されているペレット８が、銀ペーストによる接
着等のような適当な手段からなるペレットボンディング
部７を介して固着されている。The lead frame 2 includes a tab 4, a plurality of inner leads 5 arranged radially surrounding the tab 4, and integrally connected to the inner leads 5, and two rows of inner leads 5 on both sides. A pellet 8 comprising aligned outer leads 6 and having an integrated circuit 9 (only a portion shown) formed on the tab 4 is bonded by pellet bonding by suitable means such as bonding with silver paste or the like. It is fixed via part 7.

トランジスタやコンデンサ等からなる集積回路９が作り
込まれているペレット８の上層部には、下層配線１１お
よび上層配線１２を備えている電気配線１０が層間絶縁
膜１３を介したアンダクロス配線法により形成されてお
り、この配線１０は全体的に銅系材料（銅または銅合金
）を用いて、蒸着法等のような適当な手段により形成さ
れている。電気配線１０上にはポリイミド・イソ・イン
トロ・キナ・ゾリンジオン（Ｐ　Ｉ　Ｑ）等のような絶
縁材料からなるプロテクション膜１４が全体的に被着さ
れており、この膜１４には複数個のスルーホール１５が
ペレット８の周辺部に配されて、上層配線１２の表面を
露出させるようにそれぞれ開設されている。このスルー
ホール１５の底において露出された上層配線１２の表面
により、銅系　。In the upper layer of the pellet 8 in which an integrated circuit 9 consisting of a transistor, a capacitor, etc. is built, an electric wiring 10 comprising a lower layer wiring 11 and an upper layer wiring 12 is formed by an undercross wiring method via an interlayer insulating film 13. The wiring 10 is formed entirely using a copper-based material (copper or copper alloy) by a suitable means such as a vapor deposition method. A protection film 14 made of an insulating material such as polyimide iso-intro-quina-zolindione (PIQ) is entirely deposited on the electrical wiring 10, and this film 14 has a plurality of through holes. Holes 15 are arranged around the pellet 8 and are opened so as to expose the surface of the upper layer wiring 12. The surface of the upper layer wiring 12 exposed at the bottom of the through hole 15 allows copper-based wiring to be formed.

材料からなる被ボンディング部としてのボンディングパ
ッド１６が実質的に構成されていることになる。This essentially constitutes the bonding pad 16 as a bonded portion made of material.

ペレット８には銅系材料からなるボンディングワイヤ１
７の一端が銅系材料からなるボンディングパッド１６上
にそれぞれボンディングされており、このワイヤ１７の
他端はインナリード５の被ボンデイング部５ａ上にそれ
ぞれボンディングされている。銅ワイヤ１７がボンディ
ングパッドＩＧおよびインナリード５上にボンディング
されるとき、いずれの被ボンディング部の表面もボンデ
ィングワイヤと同一の銅系材料によって形成されている
（インナリード５には銅めっき膜３が被着されている。The pellet 8 has a bonding wire 1 made of a copper-based material.
One end of the wire 7 is bonded to a bonding pad 16 made of a copper-based material, and the other end of the wire 17 is bonded to a bonded portion 5a of the inner lead 5. When the copper wire 17 is bonded onto the bonding pad IG and the inner lead 5, the surfaces of both bonded parts are made of the same copper-based material as the bonding wire (the inner lead 5 is coated with the copper plating film 3). It is covered.

）ため、当該接合箇所において金属間化合物もしくは合
金層が形成されることなく同一金属相が形成される結果
、きわめて優れたボンダビリティ−が発揮される。), the same metal phase is formed at the joint without forming an intermetallic compound or alloy layer, resulting in extremely excellent bondability.

ＩＣＩはトランスファ成形等のような適当な手段により
樹脂成形されてなるパッケージ１８を備えており、この
パッケージ１８によりペレット８、インナリード５、ボ
ンディングワイヤ１７等は非気密封止されている。この
ように構成されているＩＣＩはペレット８に作り込まれ
ている集積回路を、電気配線１０、ボンディングパッド
１６、銅ワイヤＩ７およびインナリード５を介してアラ
タリーＦ６によりパッケージ１８の外部に電気的に引き
出される。そして、銅ワイヤ１７とボンディングバンド
１６およびインナリード５とのボンディング部は銅同士
の金属結合によりきわめて良好かつ強固に接合されてい
るため、ボンディング部における導電性も良好になる。The ICI includes a package 18 formed by resin molding by a suitable method such as transfer molding, and the pellet 8, inner lead 5, bonding wire 17, etc. are hermetically sealed by this package 18. The ICI configured in this manner electrically connects the integrated circuit built into the pellet 8 to the outside of the package 18 via the electrical wiring 10, the bonding pad 16, the copper wire I7, and the inner lead 5 by means of the interconnection F6. drawn out. Further, since the bonding portions between the copper wire 17, the bonding band 16, and the inner lead 5 are extremely well and firmly bonded by metal bonding between coppers, the conductivity at the bonding portions is also good.

ところで、＋ｃｇ品は出荷前に抜き取り検査が実施され
、その検査の一環として高温放置試験を含む熱環境試験
が実施される。ここで、集積回路が作り込まれたペレッ
トにおけるアルミニュームからなるボンディングパッド
に銅ワイヤがボンディングされている場合、高温放置試
験等における加熱により、アルミニュームパッドと銅ワ
イヤとのボンディング部における接合層において、アル
ミニュームと銅とが相互に拡散することにより、アルミ
ニュームと銅との合金相が生成され、かつ成長される。By the way, +CG products are subjected to a sampling inspection before shipping, and as part of the inspection, a thermal environment test including a high temperature storage test is conducted. Here, when a copper wire is bonded to a bonding pad made of aluminum in a pellet in which an integrated circuit is built, the bonding layer at the bonding part between the aluminum pad and the copper wire is When aluminum and copper diffuse into each other, an alloy phase of aluminum and copper is generated and grown.

そして、温度サイクル試験や熱衝撃試験等において、こ
のＩＣに熱ストレスが加えられ、樹脂封止パッケージ、
リードフレーム、ペレ・７トおよびボンディングワイヤ
に機械的な応力が発生すると、アルミニュームと銅との
合金層は脆弱であるため、ワイヤの断線等が発生する。Then, thermal stress is applied to this IC in a temperature cycle test, a thermal shock test, etc., and a resin-sealed package is formed.
When mechanical stress is generated in the lead frame, the pellet, and the bonding wire, wire breakage occurs because the alloy layer of aluminum and copper is fragile.

また、アルミニュームと銅との合金相が成長すると、電
気抵抗が増加する傾向になる。Furthermore, as the alloy phase of aluminum and copper grows, the electrical resistance tends to increase.

このように、ワイヤの断線や電気抵抗の急激な増加があ
ると、抜き取り検査によりその１０Ｍ品についての全て
の出荷が停止されるため、その損失は大きい。In this way, if there is a wire breakage or a sudden increase in electrical resistance, all shipments of the 10M product will be stopped due to sampling inspection, resulting in a large loss.

しかし、本実施例においては、ペレットにおけるボンデ
ィングパッド１６が銅ワイヤ１７と同質の銅系材料を用
いて形成されているため、高温放置試験等における加熱
によっても、そのボンディング邪における接合層におい
て合金相が生成され、かつ成長されることは必然的にあ
り得ない。したがって、熱ストレスが加えられてペレッ
ト８およびボンディングワイヤ１７等に機械的な応力が
発生したとしても、ボンディングバンド１６とワイヤ１
７との接合層は初期の靭性を維持しているため、ワイヤ
の断線等が発生ずることはない。また、ボンディングバ
ンド１６とワイヤ１７との接合層は同一の銅系材料より
なるため、初期の電気抵抗を維持することになる。However, in this example, since the bonding pad 16 in the pellet is formed using the same copper-based material as the copper wire 17, even when heated in a high-temperature storage test, etc., an alloy phase is formed in the bonding layer during the bonding process. It is not necessarily possible for a to be generated and grown. Therefore, even if thermal stress is applied and mechanical stress is generated in the pellet 8, the bonding wire 17, etc., the bonding band 16 and the wire 1
Since the bonding layer with No. 7 maintains its initial toughness, wire breakage does not occur. Further, since the bonding layer between the bonding band 16 and the wire 17 is made of the same copper-based material, the initial electrical resistance is maintained.

上記実施例によれば次の効果が得られる。According to the above embodiment, the following effects can be obtained.

ｉｌ＋　　ペレットの電気配線におけるボンディングパ
ッドを銅ワイヤと同一の銅系材料を用いて形成すること
により、ボンディングパッドとワイヤとを同一金属同士
の金属結合によってきわめて強固に接合させることがで
きるため、当該ボンディング部における断線や電気抵抗
の増加傾向を防止することができる。By forming the bonding pad in the electrical wiring of the il+ pellet using the same copper-based material as the copper wire, the bonding pad and the wire can be extremely strongly joined by metal bonding between the same metals. This can prevent wire breakage and the tendency for electrical resistance to increase in the parts.

（２）　　ペレットの配線全体に銅系材料を使用するこ
とにより、ボンディングバンドの表面は銅ワイヤと同一
の材料となるため、銅ワイヤを電気配線の表面に直接ボ
ンディングしても良好なボンダビリティ−を得ることが
でき、その結果、金銀の消費量を低減ないしは省略する
ことができ、製品コストを大幅に低減させることができ
る。(2) By using a copper-based material for the entire wiring of the pellet, the surface of the bonding band is made of the same material as the copper wire, so good bondability is achieved even when the copper wire is directly bonded to the surface of the electrical wiring. As a result, the consumption of gold and silver can be reduced or omitted, and product costs can be significantly reduced.

（３）　　ワイヤとペレットの電気配線とのボンダビリ
ティ−を高めることにより、ボンディングの品質および
信頼性を高めることができるため、ＩＣ等の製品の品質
および信頼性を高めることができる。(3) By increasing the bondability between the wire and the electrical wiring of the pellet, the quality and reliability of bonding can be improved, so the quality and reliability of products such as ICs can be improved.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

例えば、電気配線は全体的に銅系材料により形成するに
限らず、少なくともボンディングバンドの表面を銅系材
料により形成してもよい。For example, the electrical wiring is not limited to being entirely formed of a copper-based material, and at least the surface of the bonding band may be formed of a copper-based material.

リードフレームは低錫燐青銅からなるリードフレームを
使用するに限らず、銅または他の銅合金からなるリード
フレーム、４２アロイからなるす−ドフレームやその他
の基板等を使用することができる。The lead frame is not limited to one made of low tin phosphor bronze, but may also be a lead frame made of copper or other copper alloys, a wood frame made of 42 alloy, or other substrates.

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるｒｌＰ・ＩＣに適用
した場合について説明したが、それに限定されるもので
はなく、トランジスタ等のような電子装置、特に、ペレ
ットの電気配線上にワイヤをポンディングするもの全般
に適用することができる。In the above explanation, the invention made by the present inventor was mainly applied to rIP/IC, which is the background field of application, but the invention is not limited thereto, and is not limited to electronic devices such as transistors, etc. In particular, it can be applied to all types of bonding wires on electrical wiring of pellets.

〔発明の効果〕〔Effect of the invention〕

本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、次の通りである。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

すなわち、ペレットの電気配線におけるボンディングパ
ッドの表面を銅ワイヤと同一銅系材料を用いて形成とす
ることにより、電気配線とワイヤとのポンディング部は
同一金属同士の強固な金属結合となるため、接合強度、
ボンディングの品質、信頼性を向上させることができる
。That is, by forming the surface of the bonding pad in the electrical wiring of the pellet using the same copper-based material as the copper wire, the bonding part between the electrical wiring and the wire becomes a strong metal bond between the same metals. bonding strength,
Bonding quality and reliability can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例であるＩＣを示す拡大部分断
面図、 第２図はそのＩＣを示す縦断面図である。 ■・・・ＤＩＰ・ＩＣ（電子装置）、２・・・リードフ
レーム（基板）、３・・・銅めっき膜（被膜）、４・・
・タブ、５・・・インナリード、６・・・アウタリード
、７・・・ペレットボンディング部、８・・・ペレット
、９・・・集積回路、ＩＯ・・・電気配線、１１・・・
下層配線、１２・・・上層配線、１３・・・層間絶縁膜
、１４・・・プロテクション膜、１５・・・スルーホー
ル、１６・・・ボンディングパッド、１７・・・銅ボン
ディングワイヤ、１８・・・樹脂封止パッケージ。FIG. 1 is an enlarged partial sectional view of an IC that is an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of the IC. ■...DIP/IC (electronic device), 2... Lead frame (substrate), 3... Copper plating film (coating), 4...
- Tab, 5... Inner lead, 6... Outer lead, 7... Pellet bonding part, 8... Pellet, 9... Integrated circuit, IO... Electrical wiring, 11...
Lower layer wiring, 12... Upper layer wiring, 13... Interlayer insulating film, 14... Protection film, 15... Through hole, 16... Bonding pad, 17... Copper bonding wire, 18...・Resin-sealed package.

Claims (1)

【特許請求の範囲】 １、ペレットの電気配線における少なくともボンディン
グパッドの表面が銅系材料により形成されており、その
ボンディングパッドの表面に銅系材料からなるワイヤが
ボンディングされていることを特徴とする電子装置。 ２、電気配線が、全体的に銅系材料により形成されてい
ることを特徴とする特許請求の範囲第１項記載の電子装
置。[Claims] 1. At least the surface of the bonding pad in the electrical wiring of the pellet is formed of a copper-based material, and a wire made of the copper-based material is bonded to the surface of the bonding pad. electronic equipment. 2. The electronic device according to claim 1, wherein the electrical wiring is entirely formed of a copper-based material.
JP62031454A 1987-02-16 1987-02-16 Electronic device Pending JPS63199436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62031454A JPS63199436A (en) 1987-02-16 1987-02-16 Electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62031454A JPS63199436A (en) 1987-02-16 1987-02-16 Electronic device

Publications (1)

Publication Number Publication Date
JPS63199436A true JPS63199436A (en) 1988-08-17

Family

ID=12331698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62031454A Pending JPS63199436A (en) 1987-02-16 1987-02-16 Electronic device

Country Status (1)

Country Link
JP (1) JPS63199436A (en)

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