JPS63199172U - - Google Patents
Info
- Publication number
- JPS63199172U JPS63199172U JP9120687U JP9120687U JPS63199172U JP S63199172 U JPS63199172 U JP S63199172U JP 9120687 U JP9120687 U JP 9120687U JP 9120687 U JP9120687 U JP 9120687U JP S63199172 U JPS63199172 U JP S63199172U
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- pbn crucible
- crystal growth
- source cell
- sectional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案のＰＢＮルツボの縦断面図。第
２図は分子線結晶成長室の概略断面図。第３図は
分子線源セルの概略縦断面図。第４図は従来例に
かかるＰＢＮルツボの縦断面図。
１……ＰＢＮルツボ、２……原料融液、３……
黒体物質、４……分子線結晶成長室、５……分子
線源セル、６……マニピユレータ、７……基板ホ
ルダ、８……基板、９……ヒータ、１０……シユ
ラウド、１１……ゲートバルブ、１２……真空排
気装置、１３……ヒータ、１４……ベース板、１
５……リフレクタ、１６……熱電対、１７……支
柱、１８……電流導入用リード線、１９……超高
真空フランジ、２０……電流導入端子、２１……
熱電対導入端子。
FIG. 1 is a longitudinal cross-sectional view of the PBN crucible of the present invention. FIG. 2 is a schematic cross-sectional view of the molecular beam crystal growth chamber. FIG. 3 is a schematic vertical cross-sectional view of a molecular beam source cell. FIG. 4 is a longitudinal cross-sectional view of a PBN crucible according to a conventional example. 1... PBN crucible, 2... Raw material melt, 3...
Black body material, 4... Molecular beam crystal growth chamber, 5... Molecular beam source cell, 6... Manipulator, 7... Substrate holder, 8... Substrate, 9... Heater, 10... Shroud, 11... Gate valve, 12... Vacuum exhaust device, 13... Heater, 14... Base plate, 1
5... Reflector, 16... Thermocouple, 17... Pillar, 18... Current introduction lead wire, 19... Ultra-high vacuum flange, 20... Current introduction terminal, 21...
Thermocouple introduction terminal.
Claims (1)
ＰＢＮルツボであつて、外周に黒体物質がコーテ
イングされている事を特徴とするＰＢＮルツボの
均一加熱機構。 A uniform heating mechanism for a PBN crucible constituting a molecular beam source cell of a molecular beam crystal growth apparatus, characterized in that the outer periphery of the PBN crucible is coated with a black body material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987091206U JPH072617Y2 (en) | 1987-06-12 | 1987-06-12 | Uniform heating mechanism for PBN crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987091206U JPH072617Y2 (en) | 1987-06-12 | 1987-06-12 | Uniform heating mechanism for PBN crucible |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63199172U true JPS63199172U (en) | 1988-12-21 |
| JPH072617Y2 JPH072617Y2 (en) | 1995-01-25 |
Family
ID=30951773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987091206U Expired - Lifetime JPH072617Y2 (en) | 1987-06-12 | 1987-06-12 | Uniform heating mechanism for PBN crucible |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH072617Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322067U (en) * | 1989-07-07 | 1991-03-06 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60112690A (en) * | 1983-11-18 | 1985-06-19 | Hitachi Ltd | Evaporation source cell for molecular beam crystal growth device |
-
1987
- 1987-06-12 JP JP1987091206U patent/JPH072617Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60112690A (en) * | 1983-11-18 | 1985-06-19 | Hitachi Ltd | Evaporation source cell for molecular beam crystal growth device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322067U (en) * | 1989-07-07 | 1991-03-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH072617Y2 (en) | 1995-01-25 |