JPS63195977A - Grounding mechanism of electric circuit unit - Google Patents
Grounding mechanism of electric circuit unitInfo
- Publication number
- JPS63195977A JPS63195977A JP62028666A JP2866687A JPS63195977A JP S63195977 A JPS63195977 A JP S63195977A JP 62028666 A JP62028666 A JP 62028666A JP 2866687 A JP2866687 A JP 2866687A JP S63195977 A JPS63195977 A JP S63195977A
- Authority
- JP
- Japan
- Prior art keywords
- case
- circuit unit
- bonding
- integrated circuit
- electric circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003466 welding Methods 0.000 description 8
- 238000007747 plating Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005086 pumping Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、例えば、混成集積回路ユニットのような電
気回路ユニットを導電性の外囲器（以下、ケースと記す
）に収納する場合の接地機構に関する。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention is directed to, for example, an electrical circuit unit such as a hybrid integrated circuit unit placed in a conductive envelope (hereinafter referred to as a case). This invention relates to a grounding mechanism when stored.
（従来の技術）
車載用の混成集積回路ユニットは、通常、金属製のケー
スに収納した状態で使われる。そして、回路の接地は、
ユニットに設けられたデンディングノセッドとケースに
設けられた？ンディングノやラドとをボンディングワイ
ヤで接続することにより行なわれる。(Prior Art) A hybrid integrated circuit unit for use in a vehicle is normally housed in a metal case. And the grounding of the circuit is
Dending nosed provided in the unit and provided in the case? This is done by connecting the pads and pads with bonding wires.
第５図にこのような混成集積回路ユニットの接地機構を
示す。図において、１１は混成集積回路ユニットであり
、１２はこのユニット１１を収納するケースで、例えば
アルミニウムダイキャストによって形成される。１３は
、混成集積回路ユニット１１の厚膜回路基板１１ノに設
けられたボンディングパッドであシ、１４はケース１２
に設けられたボンディングパッドである。１５は両？ン
ディング／４’ツド１３．１４を接続するボンディング
ワイヤである。なお、ボンディングパッド１３゜１４、
ボンディングワイヤ１５は例えばアルミニウムによって
形成されている。FIG. 5 shows a grounding mechanism for such a hybrid integrated circuit unit. In the figure, 11 is a hybrid integrated circuit unit, and 12 is a case that houses this unit 11, and is made of die-cast aluminum, for example. 13 is a bonding pad provided on the thick film circuit board 11 of the hybrid integrated circuit unit 11; 14 is a bonding pad provided on the case 12;
This is a bonding pad provided on the Is 15 ryo? This is a bonding wire that connects the bonding/4' ends 13 and 14. In addition, bonding pads 13°14,
The bonding wire 15 is made of aluminum, for example.
上記ぎンディングパッド１３．１４は、第６図に示すよ
うに、半田１６．１７によって、厚膜回路基板１１１や
ケース１２に取シ付けられている。The binding pads 13 and 14 are attached to the thick film circuit board 111 and the case 12 with solder 16 and 17, as shown in FIG.
このため、ボンディングパッド１３．１５の半田付面は
銅および半田処理されている。For this purpose, the soldering surfaces of bonding pads 13.15 are treated with copper and solder.
ニウムで形成すると、アルミニウムは半田付けが困難で
あるため、このケース１２に無電界ニッケルめっきを施
して半田付けを可能とする必要がある。しかも、この場
合、めっき処理の容易さから、本来なら接地に必要な部
分だけめっき処理すればよいにもかかわらず、実際はケ
ース全面をめっき処理しているため、めっきを無駄に使
いすぎるという問題がある。Since aluminum is difficult to solder when formed from aluminum, it is necessary to apply electroless nickel plating to the case 12 to enable soldering. Moreover, in this case, due to the ease of plating, only the areas necessary for grounding should be plated, but in reality the entire surface of the case is plated, which causes the problem of wasting too much plating. be.
同様に半田付は時をみても、加熱処理の容易さから、本
来なら接地に必要な部分だけ！理すればよいにもかかわ
らず、実際はケース全体を加熱しているため、熱を無駄
に使いすぎるという問題がある。Similarly, when it comes to soldering, only the parts that would normally be necessary for grounding are soldered because of the ease of heat treatment! However, the problem is that too much heat is wasted because the entire case is actually heated.
また、デンディング／Ｊ 、ド１４をケース１２に半田
付けするときに、半田１７の量が過多になると、ボンデ
ィングパッド１４の自重が小さいため、リフロー後、ビ
ンディングパッド１４が浮いてしまうことがある。その
結果、ダンディング面の平行度がでなくなシ、接地の信
頼性が著しく悪化することがある。Furthermore, when soldering the bonding pad 14 to the case 12, if the amount of solder 17 is too large, the binding pad 14 may float after reflowing because the weight of the bonding pad 14 is small. . As a result, the parallelism of the dangling surface may be lost, and the reliability of grounding may be significantly deteriorated.
サラに、ケース１２にニッケルめっきを施すために、ケ
ース１２に対する混成集積回路ユニット１１等の接合強
度が低下する等の問題がある。Furthermore, since the case 12 is plated with nickel, there is a problem that the bonding strength of the hybrid integrated circuit unit 11 and the like to the case 12 is reduced.
（発明が解決しようという問題点）
以上述べたように従来の混成集積回路ユニットノ接地機
構は、ボンディングパッド１４を半田１７によってケー
ス１２に取り付けているため、ケース１２のめっき処理
が必要であるという問題、めっきや熱の無駄使いが多い
という問題、ダンディング面の平行度が出なくなる可能
性が高いという問題、混成集積回路ユニｌ／ ） ｉ
１等の接合強度が弱くなるという問題があった。(Problems to be Solved by the Invention) As described above, in the conventional grounding mechanism for a hybrid integrated circuit unit, the bonding pad 14 is attached to the case 12 with the solder 17, so the case 12 needs to be plated. Problems, Problems such as wasteful use of plating and heat, Problems that there is a high possibility that the parallelism of the dangling surfaces will not be achieved, Hybrid integrated circuit unit l/) i
There was a problem that the bonding strength of the first grade was weakened.
そこでこの発明は上述したような問題を解消することが
できる電気回路ユニットの接地機構を提供することを目
的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a grounding mechanism for an electric circuit unit that can solve the above-mentioned problems.
［発明の構成］
（問題点を解決するための手段と作用）上記目的を達成
するためにこの発明は、導電性ノケースにデンディング
・ぐラドを直接設けるようにしたものである。[Structure of the Invention] (Means and Effects for Solving the Problems) In order to achieve the above object, the present invention is such that a denting layer is directly provided on the conductive case.
（実施例）
以下、図面を参照してこの発明の実施例を詳細に説明す
る。(Embodiments) Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図はこの発明の第１の実施例の構成を示す断面図で
おる。図において、２１は混成集積回路ユニットであシ
、２２はこのユニット２１の薄膜回路基板２１１に半田
２３で取シ付けられたデンディングパッドである。２４
は混成集積回路２１を収納するケースである。このケー
ス２４は例えばアルミニラダイキャストによって形成さ
れている。２５はこのケース２４に取り付けられるポン
プイングツ２ツドである。このボンディングパッド２５
は例えば純度９９チ以上のアルミニウムによって形成さ
れている。このボンディングパッド２５は一端部がケー
ス２４の内面２４１に形成された溝２４２に挿入されて
いる。デンディングパッド２５の中央部には鍔２５１が
形成されている。この鍔２５ノはポンプイングツ２ツド
２５を５２４２に挿入すると、ケース２４の内面２４ノ
に接触するようになっている。そして、この接触部で、
メンディングノクツド２５は溶接によシミ気的にも機械
的にもケース２５に接続される。このようにケース２４
に溶接接続されたポンプイングツやラド２５はポンディ
ングワイヤ２６を介して混成集積回路ユニット２１側の
ノ２クド２２に接続されている。FIG. 1 is a sectional view showing the structure of a first embodiment of the present invention. In the figure, 21 is a hybrid integrated circuit unit, and 22 is a dending pad attached to the thin film circuit board 211 of this unit 21 with solder 23. 24
is a case that houses the hybrid integrated circuit 21. This case 24 is formed by die-casting aluminum, for example. Reference numeral 25 designates two pumping rods attached to this case 24. This bonding pad 25
is made of, for example, aluminum with a purity of 99% or higher. One end of the bonding pad 25 is inserted into a groove 242 formed in the inner surface 241 of the case 24. A flange 251 is formed in the center of the dending pad 25. This collar 25 comes into contact with the inner surface 24 of the case 24 when the pumping tube 25 is inserted into 5242. And at this contact point,
The mending nozzle 25 is connected to the case 25 both pneumatically and mechanically by welding. Case 24 like this
The pumping rods and radiators 25 welded to are connected to the node 22 on the hybrid integrated circuit unit 21 side via a bonding wire 26.
ビンディングパッド２５とケース２４との溶接には第２
図に示すようなシリーズ溶接を採用することができる。A second weld is used to weld the binding pad 25 and the case 24.
Series welding as shown in the figure can be adopted.
すなわち、ポンプイングツマッド２５とケース２４とを
鍔２５１の付近で２つ溶接電極２７．２８で挾み、これ
ら溶接電極２７．２８に電流を流すことによシ、ボンデ
ィングパッド２５とケース２４とを溶接するわけである
。That is, by sandwiching the pumping pad 25 and the case 24 with two welding electrodes 27 and 28 near the collar 251, and passing current through these welding electrodes 27 and 28, the bonding pad 25 and the case 24 are separated. This means welding.
以上詳述したようにこの実施例は、デンディングパッド
２５を半田を介してではなく、溶接により直接ケース２
４に取り付けるようにしたものである。したがって、こ
の実施例によれば、ケース２４をめっき処理する必要が
欧く、かつめっきや熱の無駄使いといった問題も無くす
ことができる。As described in detail above, in this embodiment, the dending pad 25 is directly attached to the case 2 by welding, not through soldering.
It was designed to be attached to 4. Therefore, according to this embodiment, there is no need to plate the case 24, and problems such as wasted plating and heat can be eliminated.
また、？ンディングパッド２５が溶接によって傾くこと
が少なく、ボンディング面が平行に保たれ、ワイヤポン
ディングの信頼性を確保することができる。Also,? The bonding pad 25 is less inclined due to welding, the bonding surfaces are kept parallel, and the reliability of wire bonding can be ensured.
また、ケース２４にめっきを施さないため、混成集積回
路ユニット２１とケース２４との接続強度を高めること
ができる。Further, since the case 24 is not plated, the strength of the connection between the hybrid integrated circuit unit 21 and the case 24 can be increased.
さらに、ボンディングパッド２５が溶接によってケース
２４に接続されているため、両者の接続強度が大きく、
両者の熱膨張係数が異なるとしても、ダンディングノッ
ト２５が取れてしまうのを防ぐことができるとともに、
過酷な使用環境（耐熱性、耐寒性、耐湿性、耐振性等）
での信頼性も高めることができる。Furthermore, since the bonding pad 25 is connected to the case 24 by welding, the connection strength between the two is high.
Even if the thermal expansion coefficients of the two are different, it is possible to prevent the dangling knot 25 from coming off, and
Harsh operating environments (heat resistance, cold resistance, moisture resistance, vibration resistance, etc.)
reliability can also be improved.
第３図はこの発明の第２の実施例の構成を示す断面図で
ある。この実施例は、メンディングパッド３ノをケース
２４と一体的に形成するようにしたものである。なお、
ボンディングパッド３１のボンディング面は、グイキャ
スト後の表面の変質層を取シ除くため、機械加工を施し
、表面を研摩したものとなっている。FIG. 3 is a sectional view showing the structure of a second embodiment of the invention. In this embodiment, the mending pad 3 is formed integrally with the case 24. In addition,
The bonding surface of the bonding pad 31 is machined and polished in order to remove the altered layer on the surface after being cast.
第４図はこの発明の第３の実施例の構成を示す断面図で
ある。この実施例は、ダイキャスト用アルミニウム用よ
り融点の高い金属（例えば黄銅にニッケルめっきを施し
たもの）によってポンプイングツＪ？ツド４１を形成し
、これをケース２４のグイキャスト時に、このケース２
４に一体に鋳込むようＫしたものである。FIG. 4 is a sectional view showing the structure of a third embodiment of the invention. In this embodiment, the pumping tool J? 41 is formed, and when case 24 is cast, this case 2
It is designed to be integrally cast into 4.
上述した第２、第３の実施例によっても先の実施例と同
様の効果を得ることができるとともに、さらに、ケース
２４の形成と同時に形成できる利点がある。The second and third embodiments described above can provide the same effects as the previous embodiments, and also have the advantage that they can be formed at the same time as the case 24.
［発明の効果コ
以上述べたようにこの発明によれば、めっき処理が不要
で、めっきや熱の無駄使いを無くすことができ、ワイヤ
ポンディングの信頼性を高めることができ、電気回路ユ
ニットとケースとの接続強度も高めることができる電気
回路ユニットの接地機構を提供することができる。[Effects of the Invention] As described above, according to the present invention, plating is not required, wasteful use of plating and heat can be eliminated, reliability of wire bonding can be improved, and electric circuit units and It is possible to provide a grounding mechanism for an electric circuit unit that can also increase the strength of the connection with the case.
第１図はこの発明の第１の実施例の構成を示す断面図、
第２図は第１図の製造工程の一部を説明するための図、
第３図はこの発明の第２の実施例の構成を示す断面図、
第４図はこの発明の第３の実施例の構成を示す断面図、
第５図は従来の混成集積回路ユニットの接地機構を示す
斜視図、第６図は同じく断面図である。
２１・・・混成集積回路ユニット、２２．２５．３１゜
４１・・・がンデづングノぐラド、２３・・・半田、２
４・・・ケース、２６・・・デンディングワイヤ、２１
）・・・薄膜回路基板、２４１・・・内面、２４２・・
・錦、２５１・・・鍔。
出願人代理人 弁理士 鈴 江 武 彦第１図
第２図
第５図FIG. 1 is a sectional view showing the configuration of a first embodiment of the present invention;
Figure 2 is a diagram for explaining part of the manufacturing process in Figure 1;
FIG. 3 is a sectional view showing the configuration of a second embodiment of the present invention;
FIG. 4 is a sectional view showing the configuration of a third embodiment of the present invention;
FIG. 5 is a perspective view showing a grounding mechanism of a conventional hybrid integrated circuit unit, and FIG. 6 is a sectional view of the same. 21...Hybrid integrated circuit unit, 22.25.31゜41...Gaddenzungunogurado, 23...Solder, 2
4... Case, 26... Dending wire, 21
)... Thin film circuit board, 241... Inner surface, 242...
・Nishiki, 251...Tsuba. Applicant's Representative Patent Attorney Takehiko Suzue Figure 1 Figure 2 Figure 5
Claims (1)
性外囲器に直接設けられた接地用のボンディングパッド
と、 を具備したことを特徴とする電気回路ユニットの接地機
構。[Claims] A grounding of an electric circuit unit, comprising: a conductive envelope for housing the electric circuit unit; and a bonding pad for grounding provided directly on the conductive envelope. mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62028666A JPS63195977A (en) | 1987-02-10 | 1987-02-10 | Grounding mechanism of electric circuit unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62028666A JPS63195977A (en) | 1987-02-10 | 1987-02-10 | Grounding mechanism of electric circuit unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63195977A true JPS63195977A (en) | 1988-08-15 |
| JPH0442780B2 JPH0442780B2 (en) | 1992-07-14 |
Family
ID=12254835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62028666A Granted JPS63195977A (en) | 1987-02-10 | 1987-02-10 | Grounding mechanism of electric circuit unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63195977A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016506615A (en) * | 2012-11-23 | 2016-03-03 | コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミットベシュレンクテル ハフツングＣｏｎｔｉ Ｔｅｍｉｃ ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃ ＧｍｂＨ | Equipotentialization in automotive control equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017003977A1 (en) * | 2017-04-25 | 2018-10-25 | e.solutions GmbH | Housing component for an electronic device, method for manufacturing the housing component and electronic device with the housing component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6062774U (en) * | 1983-10-06 | 1985-05-02 | クラリオン株式会社 | Grounding device for printed circuit board |
| JPS6186987U (en) * | 1984-11-14 | 1986-06-07 |
-
1987
- 1987-02-10 JP JP62028666A patent/JPS63195977A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6062774U (en) * | 1983-10-06 | 1985-05-02 | クラリオン株式会社 | Grounding device for printed circuit board |
| JPS6186987U (en) * | 1984-11-14 | 1986-06-07 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016506615A (en) * | 2012-11-23 | 2016-03-03 | コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミットベシュレンクテル ハフツングＣｏｎｔｉ Ｔｅｍｉｃ ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃ ＧｍｂＨ | Equipotentialization in automotive control equipment |
| US10010017B2 (en) | 2012-11-23 | 2018-06-26 | Conti Temic Microelectronic Gmbh | Potential equalization in a control device for a motor vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0442780B2 (en) | 1992-07-14 |
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