JPS63195841A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS63195841A JPS63195841A JP62027959A JP2795987A JPS63195841A JP S63195841 A JPS63195841 A JP S63195841A JP 62027959 A JP62027959 A JP 62027959A JP 2795987 A JP2795987 A JP 2795987A JP S63195841 A JPS63195841 A JP S63195841A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- protective layer
- substrate
- protective
- inorg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 68
- 239000011241 protective layer Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229920005989 resin Polymers 0.000 claims abstract description 21
- 239000011347 resin Substances 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 15
- 239000011253 protective coating Substances 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 11
- 239000011247 coating layer Substances 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 13
- 238000000576 coating method Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- -1 Cab Chemical class 0.000 description 8
- 239000005388 borosilicate glass Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229920005668 polycarbonate resin Polymers 0.000 description 7
- 239000004431 polycarbonate resin Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229920002601 oligoester Polymers 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical group COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical group CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- GVPWHKZIJBODOX-UHFFFAOYSA-N dibenzyl disulfide Chemical compound C=1C=CC=CC=1CSSCC1=CC=CC=C1 GVPWHKZIJBODOX-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 150000002688 maleic acid derivatives Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- OLQFXOWPTQTLDP-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCO OLQFXOWPTQTLDP-UHFFFAOYSA-N 0.000 description 1
- RXDYOLRABMJTEF-UHFFFAOYSA-N 2-chloro-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(Cl)C(=O)C1=CC=CC=C1 RXDYOLRABMJTEF-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- DIVXVZXROTWKIH-UHFFFAOYSA-N 2-hydroxy-1,2-diphenylpropan-1-one Chemical compound C=1C=CC=CC=1C(O)(C)C(=O)C1=CC=CC=C1 DIVXVZXROTWKIH-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- BUZICZZQJDLXJN-UHFFFAOYSA-N 3-azaniumyl-4-hydroxybutanoate Chemical compound OCC(N)CC(O)=O BUZICZZQJDLXJN-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910016964 MnSb Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910002837 PtCo Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- ZCZFEIZSYJAXKS-UHFFFAOYSA-N [3-hydroxy-2,2-bis(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COC(=O)C=C ZCZFEIZSYJAXKS-UHFFFAOYSA-N 0.000 description 1
- 231100000987 absorbed dose Toxicity 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- VSXGXPNADZQTGQ-UHFFFAOYSA-N oxirane;phenol Chemical class C1CO1.OC1=CC=CC=C1 VSXGXPNADZQTGQ-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 229910000982 rare earth metal group alloy Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
工 発明の背景
技術分野
本発明は、レーザー光等の熱および光を用いて情報の記
録、再生を行う光磁気記録媒体等の光記録媒体に関する
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical recording medium such as a magneto-optical recording medium that records and reproduces information using heat and light such as laser light.
先行技術とその問題点
光記録媒体の一つとして、光磁気メモリ用の媒体がある
。Prior art and its problems One type of optical recording medium is a medium for magneto-optical memory.
光磁気メモリの記録媒体としては、 MnB1.MnAnGe、MnSb。As a recording medium for magneto-optical memory, MnB1. MnAnGe, MnSb.
MnCuB1.GdFe、TbFe。MnCuB1. GdFe, TbFe.
GdCo、PtCo、TbCo。GdCo, PtCo, TbCo.
TbFeCo、GdFeCo。TbFeCo, GdFeCo.
TbFeO3、Gd I G、GdTbFe。TbFeO3, GdIG, GdTbFe.
GdTbFeCoB1.CoFe204等の材料が知ら
れている。 これらは、真空蒸着法やスパッタリング法
等の方法で、プラスチックやガラス等の透明基板上に薄
膜として形成される。 これらの光磁気記録媒体に共通
している特性としては、
磁化容易軸が膜面に垂直方向にあり、
さらに、カー効果やファラデー効果が大きいという点を
あげることができる。GdTbFeCoB1. Materials such as CoFe204 are known. These are formed as a thin film on a transparent substrate such as plastic or glass by a method such as a vacuum evaporation method or a sputtering method. Common characteristics of these magneto-optical recording media include the fact that the axis of easy magnetization is perpendicular to the film surface, and that the Kerr effect and Faraday effect are large.
このような媒体に要求されることは、
第1に、キューリ一点が100〜200℃程度で、補償
点が室温付近であること、
第2に、ノイズとなる結晶粒界などの欠陥が比較的少な
いこと、
第3に、比較的大面積にわたって磁気的、機械的に均一
な膜が得られることがあげられる。What is required of such a medium is that firstly, the Curie point is around 100 to 200°C and the compensation point is around room temperature, and secondly, defects such as grain boundaries that cause noise are relatively free. Thirdly, a magnetically and mechanically uniform film can be obtained over a relatively large area.
このような要求に答え、上記材料のなかで、近年、希土
類−遷移金属の非晶質垂直磁性薄膜が大きな注目を集め
ている。In response to such demands, among the above-mentioned materials, amorphous perpendicular magnetic thin films of rare earth-transition metals have attracted great attention in recent years.
しかし、このような希土類−遷移金属非晶質薄膜からな
る光磁気記録媒体において、磁性薄膜層は大気に接した
まま保存されると、大気中の酸素や水により希土類が選
択的に腐食あるいは酸化されてしまい、情報の記録、再
生が不可能となる。However, in magneto-optical recording media made of such rare earth-transition metal amorphous thin films, if the magnetic thin film layer is stored in contact with the atmosphere, the rare earths may be selectively corroded or oxidized by oxygen and water in the atmosphere. This makes it impossible to record or reproduce information.
そこで、一般には、前記磁性薄膜層の基板側ないし基板
反対側表面に保護層を設けた構成を有するものが多く研
究されている。Therefore, in general, many studies have been conducted on devices having a structure in which a protective layer is provided on the surface of the magnetic thin film layer on the substrate side or on the surface opposite to the substrate.
従来、このような防湿性等の耐食性付与のための保護層
としては、−酸化ケイ素、二酸化ケイ素、窒化アルミ、
窒化ケイ素、硫化亜鉛等の無機系の真空蒸着膜や樹脂膜
等を設ける試み(特開昭58−80142号等)が開示
されている。 しかし、これらは、いずれも未だ耐食性
あるいは膜と基板との密着性の点で満足できるものでは
ない。Conventionally, protective layers for imparting corrosion resistance such as moisture resistance include - silicon oxide, silicon dioxide, aluminum nitride,
Attempts have been made to provide vacuum-deposited inorganic films such as silicon nitride and zinc sulfide, resin films, etc. (Japanese Patent Application Laid-Open No. 80142/1984). However, none of these is yet satisfactory in terms of corrosion resistance or adhesion between the film and the substrate.
また、一定の組成を有する無機ガラスを保護層に用いた
場合においても、媒体の耐久性、特に水分透過の防止、
接着性の向上環の改善がみられる旨の開示がなされてい
る(特開昭59−52443号公報、同第60−177
449号公報)。In addition, even when inorganic glass with a certain composition is used for the protective layer, the durability of the medium, especially the prevention of moisture permeation,
It has been disclosed that there is an improvement in adhesiveness (Japanese Unexamined Patent Publications No. 59-52443, No. 60-177).
Publication No. 449).
しかしながら、光磁気記録媒体の耐久性および耐食性に
対する要求は厳しく、これらのものであっても、未だそ
の効果は十分とはいえず、さらにより一層の改善が望ま
れている。However, there are strict demands on the durability and corrosion resistance of magneto-optical recording media, and even with these, the effects are still not sufficient, and further improvements are desired.
なお、このような問題は、いわゆる相転移タイプの記録
層を有する光記録媒体でも同様である。Note that such a problem also occurs in optical recording media having a so-called phase transition type recording layer.
■ 発明の目的
本発明の目的は、記録層の劣化が防止され、耐食性、耐
久性に優れた光記録媒体を提供することにある。■Object of the Invention An object of the present invention is to provide an optical recording medium in which deterioration of the recording layer is prevented and excellent corrosion resistance and durability are achieved.
■ 発明の開示 このような目的は、以下の本発明によって達成される。■Disclosure of invention Such objects are achieved by the present invention as described below.
すなわち、本発明は基板上に第1の無機保護層と記録層
と第2の無機保護層とを順次積層して積層体を設け、こ
の積層体を完全に覆うように、有機保護コート層を設層
した光記録媒体であって、第2の無機保護層の40 ”
Cにおける水分透過量(JIS Z 0208)が2
g/rn’ −24hrs以下であることを特徴とする
光記録媒体である。That is, in the present invention, a first inorganic protective layer, a recording layer, and a second inorganic protective layer are sequentially laminated on a substrate to form a laminate, and an organic protective coating layer is provided so as to completely cover this laminate. 40" of a second inorganic protective layer, the optical recording medium comprising:
Moisture permeation amount (JIS Z 0208) in C is 2
The optical recording medium is characterized in that g/rn' -24 hrs or less.
■ 発明の具体的構成 以下、本発明の具体的構成について詳細に説明する。■Specific structure of the invention Hereinafter, a specific configuration of the present invention will be explained in detail.
本発明の光記録媒体の一実施例として、光磁気記録媒体
を第1図に示す。FIG. 1 shows a magneto-optical recording medium as an embodiment of the optical recording medium of the present invention.
光磁気記録媒体1は、樹脂製の基板2上に、第1の無機
保護層3と、記録層としての磁性薄膜層4と、第2の無
機保護層5とを順次積層して積層体とし、この積層体の
上面および側・面を完全に覆うように有機保護コート層
6を設層して構成される。The magneto-optical recording medium 1 is a laminate in which a first inorganic protective layer 3, a magnetic thin film layer 4 as a recording layer, and a second inorganic protective layer 5 are sequentially laminated on a resin substrate 2. , an organic protective coating layer 6 is formed so as to completely cover the top surface, sides, and surfaces of this laminate.
本発明において第2の無機保護層5は、JISZ 02
08に基づく40℃における水分透過量(以下、Tで表
わす)が2g/ml・24 hrs以下とされる。In the present invention, the second inorganic protective layer 5 conforms to JISZ 02
The amount of water permeation (hereinafter referred to as T) at 40°C based on 2008 is set to be 2 g/ml·24 hrs or less.
Tが2g/rn′・24hrsを超えると、水分透過の
防止が不充分で耐食性が問題となる。When T exceeds 2 g/rn'·24 hrs, prevention of moisture permeation is insufficient and corrosion resistance becomes a problem.
このような第2の無機保護層5の厚さは、好ましくは3
00〜3000人、より好ましくは500〜1500人
とする。The thickness of such second inorganic protective layer 5 is preferably 3
00 to 3000 people, more preferably 500 to 1500 people.
この厚さが300人未満であると本発明の目的を達成す
ることが難しく、また、3000人を超えると、経済性
の点で問題となる。If the thickness is less than 300 people, it will be difficult to achieve the object of the present invention, and if it exceeds 3000 people, there will be problems in terms of economic efficiency.
上記のようなTを示す第2の無機保護層5の材質として
は、酸素、炭素、窒素、硫黄等を含む化合物、例えば5
iOz、Sin、AuN、AIl、203 、Si3N
4.ZnS、BN。The material of the second inorganic protective layer 5 exhibiting T as described above may be a compound containing oxygen, carbon, nitrogen, sulfur, etc., such as 5
iOz, Sin, AuN, AIl, 203, Si3N
4. ZnS, B.N.
TiO2,TiN等ないし八1、希土類金属等の1種以
上とSiとを含み、0およびNを含むものなど上記化合
物の混合物などの各種誘電体物質;ガラス、例えばホウ
ケイ酸ガラス、バリウムホウケイ酸ガラス、アルミニウ
ムホウケイ酸ガラス等あるいはこのものにSi3N4等
を含むものなどの材質を用いればよい。 なかでも、5
in240〜80wt%のホウケイ酸ガラス、バリウム
ホウケイ酸ガラス、アルミニウムホウケイ酸ガラスや、
これらのS i O2の一部をS s 3N <等て置
換したものが好ましい。Various dielectric materials, such as mixtures of the above compounds, including one or more of TiO2, TiN, etc., rare earth metals, etc., and Si, and those containing 0 and N; glasses, such as borosilicate glass, barium borosilicate glass; , aluminum borosilicate glass, or a material containing Si3N4 or the like may be used. Among them, 5
in240-80wt% borosilicate glass, barium borosilicate glass, aluminum borosilicate glass,
It is preferable to substitute a part of these S i O2 with S s 3N <, etc.
これらのうちで特に好ましいものとしては、下記のもの
が挙げられる。Among these, the following are particularly preferred.
(1)酸化ケイ素40〜60wt%と、Bad。(1) 40 to 60 wt% silicon oxide and Bad.
Cab、SrO,MgO,ZnO,PbO等の2価金属
酸化物50wt%以下および/またはアルカリ金属酸化
物10wt%以下と、酸化ホウ素および/または酸化ア
ルミニウムとを含有するもの。Contains 50 wt% or less of a divalent metal oxide such as Cab, SrO, MgO, ZnO, PbO and/or 10 wt% or less of an alkali metal oxide, and boron oxide and/or aluminum oxide.
(2)Siと他の金属または半金属元素としてBa、C
a、Sr、Mg、Zn、Pb等の1種以上、A4.Bの
1種以上およびアルカリ金属元素の1種以上のうちの少
なくとも1つとを含み、全金属ないし半金属中のSi原
子比が0.3〜0.9であり、ざらに0およびNを含み
、O/(0+N)が0.4〜0.8であるもの。(2) Si and other metal or metalloid elements such as Ba and C
a, one or more of Sr, Mg, Zn, Pb, etc., A4. B and at least one of one or more alkali metal elements, the Si atomic ratio in all metals or semimetals is 0.3 to 0.9, and roughly contains 0 and N. , O/(0+N) is 0.4 to 0.8.
磁性薄膜層4の第2の無機保護層5と反対側には、第1
の無機保護層3が設層される。On the side opposite to the second inorganic protective layer 5 of the magnetic thin film layer 4, a first
An inorganic protective layer 3 is formed.
第1の無機保護層3のTは、基板2が樹脂製である場合
、3 g/rn2・24 hrs以下であることが好ま
しい。When the substrate 2 is made of resin, T of the first inorganic protective layer 3 is preferably 3 g/rn2·24 hrs or less.
Tが3 g/rrf −24hrsを超えると、水分透
過の防止が不充分で耐食性が問題となる。When T exceeds 3 g/rrf -24 hrs, prevention of moisture permeation is insufficient and corrosion resistance becomes a problem.
この第1の無機保護層3の厚さは、好ましくは200〜
3000人、より好ましくは500〜1500人とする
。The thickness of this first inorganic protective layer 3 is preferably 200 to
The number of participants is 3,000, preferably 500 to 1,500.
この厚さが200人未満であると本発明の目的を達成す
ることが難しく、また、3000人を超えると、経済性
の点で問題となる。If the thickness is less than 200 people, it will be difficult to achieve the object of the present invention, and if it exceeds 3000 people, there will be problems in terms of economic efficiency.
このような第1の無機保護層3の材質は、前記の第1の
無機保護層と同様のものを用いればよいが、特に第1の
無機保護層3としては、上記の特に(1)、(2)で代
表されるガラス層を下地保護層として300〜1000
人程度に設層し、この上に5i02.5iO1Si3N
4.AIN、An203 、ZnS等、あるいはこれら
の混合物などの誘電体物質を誘電体層として500〜1
500人程度に設層したものが好ましい。The material of the first inorganic protective layer 3 may be the same as the first inorganic protective layer described above, but in particular, the first inorganic protective layer 3 may be made of the above-mentioned (1), 300 to 1000 as the base protective layer using the glass layer represented by (2)
5i02.5iO1Si3N
4. 500~1 as a dielectric layer using a dielectric material such as AIN, An203, ZnS, etc., or a mixture thereof.
It is preferable to set up a number of layers for about 500 people.
この場合、誘電体層は800 nmにおける屈折率1.
8〜3.0のものが好ましく、Siと希土類金属および
/またはA1とを含み、OおよびNを含むものが好適で
ある。In this case, the dielectric layer has a refractive index of 1.0 at 800 nm.
8 to 3.0 is preferable, and one containing Si, a rare earth metal and/or A1, and containing O and N is preferable.
これら、第1および第2の保護層は、各種気相成膜法、
例えば、スパッタ法、蒸着法、イオンブレーティング法
、プラズマCVD、光CVD、特に2種以上の異なる組
成からなるターゲットを用いた多元スパッタ法あるいは
酸素を用いる反応性スパッタ法等によフて形成される。These first and second protective layers can be formed using various vapor phase deposition methods.
For example, it is formed by a sputtering method, a vapor deposition method, an ion blating method, a plasma CVD method, a photo-CVD method, a multi-source sputtering method using a target composed of two or more different compositions, a reactive sputtering method using oxygen, etc. Ru.
また、保護層中の不純物として、成膜雰囲気中に存在す
るAr、N2等が入ってもよい。Furthermore, Ar, N2, etc. present in the film-forming atmosphere may be included as impurities in the protective layer.
その他、FeO203、CuO1 Cr203.MnO,、Coo、Nip。Others: FeO203, CuO1 Cr203. MnO,,Coo,Nip.
As2O3等が全体のi、owt%程度以下含有されて
もよい。As2O3 or the like may be contained in an amount of about i, owt% or less of the total.
本発明の実施例において記録層として用いる磁性薄膜層
4は、変調された熱ビームあるいは変調された磁界によ
り、情報が磁気的に記録されるものであり、記録情報は
磁気−光変換して再生するものである。In the magnetic thin film layer 4 used as a recording layer in the embodiment of the present invention, information is magnetically recorded by a modulated heat beam or a modulated magnetic field, and the recorded information is reproduced by magneto-optical conversion. It is something to do.
このような磁性薄膜層4の材質としては、Gd、Tb等
の希土類金属と好ましくはFe、CO等の遷移金属の合
金をスパッタ、蒸着法等により、非晶質膜として形成し
たものである。The magnetic thin film layer 4 is made of an alloy of rare earth metals such as Gd and Tb and preferably transition metals such as Fe and CO, and is formed as an amorphous film by sputtering, vapor deposition, or the like.
この場合、Feとcoの総合有量は、65〜85at%
であることが好ましい。In this case, the total amount of Fe and co is 65 to 85 at%
It is preferable that
そして、残部は実質的に希土類金属、特にGdおよび/
またはTbである。The remainder is substantially rare earth metals, especially Gd and/or
Or Tb.
そして、その好適例としては、TbFeCo、GdFe
Co、GdTbFeCo等がある。Suitable examples include TbFeCo, GdFe
Co, GdTbFeCo, etc.
なお、これら磁性薄膜層中には10at%以下の範囲で
Cr、A11.、Ti、Pt、Si、MOlMn、V、
N i、Cu、Zn、Ge、Au等が含有されてもよい
。Note that these magnetic thin film layers contain Cr, A11. , Ti, Pt, Si, MOIMn, V,
Ni, Cu, Zn, Ge, Au, etc. may be contained.
また、希土類元素として10at%以下の範囲でSc、
Y、La、Ce、Pr%Nd%Pm。In addition, as a rare earth element, Sc in a range of 10 at% or less,
Y, La, Ce, Pr%Nd%Pm.
Sm、Eu%Dy、Ho、Er、Tm、Yb、Lu等を
含有してもよい。It may contain Sm, Eu%Dy, Ho, Er, Tm, Yb, Lu, etc.
このよう、な磁性薄膜層の厚さは、通常、100〜I
oooo人程度である。The thickness of such a magnetic thin film layer is usually 100 to I
There are about oooo people.
この他記録層の材質としては、いわゆる相転移タイプの
ものとして、例えば、
Te−3e、Te−3e−3n%Te −Ge、Te−
In、Te−3n、Te−Ge−3b−3,Te−Ge
−As−3i、Te −3i、Te−Ge−3i−3b
、Te−Ge−B1.Te−Ge−In−Ga、Te−
3t −Bi−Tit、Te−Ge−B1−In−3、
Te−As−Ge−3b、Te−Ge−3e−3,Te
−Ge−3e、Te−As−Ge −G a 、 T
e −G e −S −1n 、 S e −G e
−TI、S e −T e −A s 、 S e
−G e −T It −3b、5e−Ge−Bi、5
e−3(以上、特公昭54−41902号、特許第10
04835号など)
T e Ox (特開昭58−54338号、特許第
974257号記載のTe酸化物中に分散されたTe)
、
Te0X+VoX (特許第974258号)、
Te0X+VoX (特許第974257号)、その他
、Te−Tl1. Te−Tl1−3i、 5e−Z
n−3b、 Te−3e−Ga。Other materials for the recording layer include so-called phase change type materials, such as Te-3e, Te-3e-3n%Te-Ge, Te-
In, Te-3n, Te-Ge-3b-3, Te-Ge
-As-3i, Te-3i, Te-Ge-3i-3b
, Te-Ge-B1. Te-Ge-In-Ga, Te-
3t-Bi-Tit, Te-Ge-B1-In-3,
Te-As-Ge-3b, Te-Ge-3e-3, Te
-Ge-3e, Te-As-Ge -G a , T
e −G e −S −1n , S e −G e
-TI, S e -T e -A s, S e
-G e -T It -3b, 5e-Ge-Bi, 5
e-3 (hereinafter referred to as Japanese Patent Publication No. 54-41902, Patent No. 10)
04835, etc.) T e Ox (Te dispersed in Te oxide described in JP-A-58-54338 and Patent No. 974257)
, Te0X+VoX (Patent No. 974258), Te0X+VoX (Patent No. 974257), and others, Te-Tl1. Te-Tl1-3i, 5e-Z
n-3b, Te-3e-Ga.
TeN、等のTe、Seを主体とするカルコゲン系
Ge−3n、5i−Sn等の非晶質−結晶質転移を生じ
る合金
Ag−Zn、Ag−A1.−Cu、Cu−Al1゜等の
結晶構造変化によって色変化を生じる合金、In−3b
等の結晶粒径の変化を生じる合金などがある。Chalcogen-based alloys mainly composed of Te and Se such as TeN, Ge-3n, 5i-Sn, etc., which cause an amorphous-crystalline transition, Ag-Zn, Ag-A1. - Alloys that change color due to changes in crystal structure such as Cu, Cu-Al1゜, etc., In-3b
There are alloys that cause changes in crystal grain size.
このような記録層は、蒸着法、スパッタ法、イオンブレ
ーティング法等のドライコーティング方式等を用いて設
層すればよい。 そしてその設層厚さは20nm〜1−
程度とされる。Such a recording layer may be formed using a dry coating method such as a vapor deposition method, a sputtering method, an ion blating method, or the like. And the layer thickness is 20 nm ~ 1-
It is considered to be a degree.
基板2は、ガラスないし樹脂製であり、好ましい樹脂材
質としては、アクリル樹脂、ポリカーボネート樹脂、エ
ポキシ樹脂、ポリメチルペンテン樹脂などがあげられる
。The substrate 2 is made of glass or resin, and preferred resin materials include acrylic resin, polycarbonate resin, epoxy resin, and polymethylpentene resin.
これらの樹脂のうち、耐久性、特にソリなどに対する耐
性等の点でポリカーボネート樹脂が好ましい。Among these resins, polycarbonate resins are preferred in terms of durability, particularly resistance to warping and the like.
この場合のポリカーボネート樹脂としては、脂肪族ポリ
カーボネート、芳香族−脂肪族ポリカーボネート、芳香
族ポリカーボネートのいずれであってもよいが、特に芳
香族ポリカーボネート樹脂であることが好ましい。 こ
れらのうちでは融点、結晶性、とり扱い等の点でビスフ
ェノールからのポリカーボネート樹脂が好ましい。 中
でもビスフェノールAタイプのポリカーボネート樹脂は
最も好ましく用いられる。The polycarbonate resin in this case may be any of aliphatic polycarbonate, aromatic-aliphatic polycarbonate, and aromatic polycarbonate, but aromatic polycarbonate resin is particularly preferred. Among these, polycarbonate resins made from bisphenol are preferred in terms of melting point, crystallinity, handling, etc. Among them, bisphenol A type polycarbonate resin is most preferably used.
また、ポリカーボネート樹脂の数平均分子量は、10,
000〜15,000程度であることが好ましい。In addition, the number average molecular weight of the polycarbonate resin is 10,
It is preferable that it is about 000 to 15,000.
このような基板2のTは3〜5 g/m2・24hrs
程度である。The T of such a substrate 2 is 3 to 5 g/m2・24hrs
That's about it.
このとき、基板の2の厚さは1.2〜1.5mm程度と
される。At this time, the thickness of the substrate 2 is approximately 1.2 to 1.5 mm.
そしてこのような基板2の830 nmの屈折率は通常
1.55〜1.59程度である。The refractive index of such a substrate 2 at 830 nm is usually about 1.55 to 1.59.
なお、記録は基板2をとおして行うので、書き込みない
し読み出し光に対する透過率は86%以上とする。Note that since recording is performed through the substrate 2, the transmittance for writing or reading light is set to 86% or more.
このようなディスク状基板の磁性薄膜層形成面には、ト
ラッキング用の溝やピットが形成されてもよい。Tracking grooves or pits may be formed on the surface of such a disk-shaped substrate on which the magnetic thin film layer is formed.
溝が形成される場合、溝の深さは、^/ 8 n程度、
特にλ/ 6 n〜λ/ 12 n (ここに、nは基
板の屈折率である)とされる。 また、溝の巾は、0.
4〜2.o戸程度とされる。When a groove is formed, the depth of the groove is about ^/8n,
In particular, the range is λ/6 n to λ/12 n (where n is the refractive index of the substrate). Moreover, the width of the groove is 0.
4-2. It is estimated that there are about 100 people.
また、アドレス用のピットが形成されていてもよい。Further, address pits may be formed.
そして、通常、この溝の凹部に位置する磁性薄膜層を記
録トラック部として、書き込み光および読み出し光を基
板裏面側から照射することが好ましい。Generally, it is preferable to irradiate the write light and the read light from the back side of the substrate, using the magnetic thin film layer located in the recessed part of the groove as a recording track part.
このように構成することにより、書き込み感度と読み出
しのC/N比が向上し、しかもトラッキングの制御信号
は大きくなる。With this configuration, the writing sensitivity and the reading C/N ratio are improved, and the tracking control signal is also increased.
また、その他の基板の形状として、テープ、ドラム等と
してもよい。In addition, other shapes of the substrate may be used, such as a tape or a drum.
第2の無機保護層5の上には、前記積層体の上面および
側面を完全に覆うように有機保護コート層6が設けられ
る。An organic protective coat layer 6 is provided on the second inorganic protective layer 5 so as to completely cover the top and side surfaces of the laminate.
この有機保護コート層6は、前記積層体の上面および側
面の耐食性を得るためのものである。This organic protective coating layer 6 is for providing corrosion resistance to the top and side surfaces of the laminate.
このような有機保護コートは、従来、積層体の上面のみ
に設ければよいと考えられているが、積層体の内周側な
いし外周側の側面に有機保護コートを設けないときには
、耐食性が不十分である。Conventionally, it has been thought that it is sufficient to provide such an organic protective coat only on the top surface of the laminate, but if no organic protective coat is provided on the inner or outer side surfaces of the laminate, corrosion resistance may be compromised. It is enough.
このような場合、有機保護コートは、積層体の内周面内
側1 mm程度以上から積層体の外周面外側1mm程度
以上の範囲に亘って設けることが好ましい。In such a case, the organic protective coat is preferably provided over a range from about 1 mm or more inside the inner peripheral surface of the laminate to about 1 mm or more outside the outer peripheral surface of the laminate.
有機保護コート層6の材質としては、通常、公知の種々
の有機系の物質を用いればよい。As the material for the organic protective coat layer 6, various known organic substances may be used.
より好ましくは、放射線硬化型化合物を電子線、紫外線
等の放射線で硬化させたものを用いるのがよい。More preferably, a radiation-curable compound cured with radiation such as an electron beam or ultraviolet rays is used.
用いる放射線硬化型化合物としては、イオン化エネルギ
ーに感応し、ラジカル重合性を示す不飽和二重結合を有
すアクリル酸、メタクリル酸、あるいはそれらのエステ
ル化合物のようなアクリル系二重結合、ジアリルフタレ
ートのようなアリル系二重結合、マレイン酸、マレイン
酸誘導体等の不飽和二重結合等の放射線照射による架橋
あるいは重合乾燥する基を分子中に含有または導入した
モノマー、オリゴマーおよびポリマー等を挙げることが
できる。The radiation-curable compounds to be used include acrylic acid, methacrylic acid, and acrylic double bonds such as ester compounds thereof, which have unsaturated double bonds that are sensitive to ionization energy and exhibit radical polymerizability, and diallylphthalate. Examples include monomers, oligomers, and polymers containing or introducing into the molecule groups that can be crosslinked or polymerized and dried by radiation irradiation, such as allylic double bonds, unsaturated double bonds such as maleic acid, and maleic acid derivatives. can.
放射線硬化型モノマーとしては、分子量2000未満の
化合物が、オリゴマーとしては分子量2000〜100
00のものが用いられる。As a radiation-curable monomer, a compound with a molecular weight of less than 2000 is used, and as an oligomer, a compound with a molecular weight of 2000 to 100 is used.
00 is used.
これらはスチレン、エチルアクリレート、エチレングリ
コールジアクリレート、エチレングリコールジメタクリ
レート、ジエチレングリコールジアクリレート、ジエチ
レングリコールメタクリレート、■、6−ヘキサングリ
コールジアクリレート、■、6−ヘキサンゲリコールジ
メタクリレート等も挙げられるが、特に好ましいものと
しては、ペンタエリスリトールテトラアクリレート (
メタクリレート)、ペンタエリスリトールアクリレート
(メタクリレート)、トリメチロールプロパントリアク
リレート(メタクリレート)、トリメチロールプロパン
ジアクリレート(メタクリレート)、多官能オリゴエス
テルアクリレート(アロニックスM−
7100、M−5400、M−5500,M−5700
、M−6250、M−6500、M−8030、M−8
060、M−8100等、東亜合成)、ウレタンエラス
トマーにツボラン4040)のアクリル変性体、あるい
はこれらのものにC0OH等の官能基が導入されたもの
、フェノールエチレンオキシド付加物のアクリレート(
メタクリレート)、下記一般式で示されるペンタエリス
リトール縮合環にアクリル基(メタクリル基)またはε
−カプロラクトン−アクリル基のついた化合物、
1) (CH2=CHCOOCH2)3 CCH2
0H(特殊アクリレートA)
2) (CH2=CHCOOCH2)3−CCH2
0H3(特殊アクリレートB)
3) (CH2=CHC0(OC3H6)n 0
CH2)3−CCH2CH3(特殊アクリレートC)
(特殊アクリレートD)
(特殊アクリレートE)
CH2CH2C00CH=CH2
(特殊アクリレートF)
式中、m=1、a=2、b=4の化合物(以下、特殊ペ
ンタエリスリトール縮合物Aという)、
m=1、a=3、b=3の化合物(以下、特殊ペンタエ
リスリトール縮合物Bという)、m=1、a=6、b=
oの化合物(以下、特殊ペンタエリスリトール縮合物C
という)、m=2、a=6、b=oの化合物(以下、特
殊ペンタエリスリトール縮合物りという)、および下記
式一般式で示される特殊アクリレート類等が挙げられる
。These include styrene, ethyl acrylate, ethylene glycol diacrylate, ethylene glycol dimethacrylate, diethylene glycol diacrylate, diethylene glycol methacrylate, (1), 6-hexane glycol diacrylate, (2), 6-hexane glycol dimethacrylate, etc., and are particularly preferred. Examples include pentaerythritol tetraacrylate (
methacrylate), pentaerythritol acrylate (methacrylate), trimethylolpropane triacrylate (methacrylate), trimethylolpropane diacrylate (methacrylate), polyfunctional oligoester acrylate (Aronix M-7100, M-5400, M-5500, M-5700
, M-6250, M-6500, M-8030, M-8
060, M-8100, etc. (Toagosei), urethane elastomers with acrylic modified products of Tuborane 4040), or products with functional groups such as C0OH introduced into these, acrylates of phenol ethylene oxide adducts (
methacrylate), an acrylic group (methacrylic group) or ε in the pentaerythritol condensed ring represented by the general formula below.
-Caprolactone-A compound with an acrylic group, 1) (CH2=CHCOOCH2)3 CCH2
0H (special acrylate A) 2) (CH2=CHCOOCH2)3-CCH2
0H3 (special acrylate B) 3) (CH2=CHC0(OC3H6)n 0
CH2)3-CCH2CH3 (Special acrylate C) (Special acrylate D) (Special acrylate E) CH2CH2C00CH=CH2 (Special acrylate F) Compound where m=1, a=2, b=4 (hereinafter referred to as special pentaerythritol) (referred to as condensate A), m = 1, a = 3, b = 3 compound (hereinafter referred to as special pentaerythritol condensate B), m = 1, a = 6, b =
o compound (hereinafter referred to as special pentaerythritol condensate C
), m=2, a=6, b=o (hereinafter referred to as special pentaerythritol condensate), and special acrylates represented by the general formula below.
8) CH2=CHCOO−(CH2CH20)4
C0CH=CH2(特殊アクリレートH)
CH2CH2C00CH=CH2
(特殊アクリレートI)
(特殊アクリレートJ)
Aニアクリル酸、 X:多価アルコールY:多塩基
酸 (特殊アクリレートK)12) A−
(−M−N+−M−An
Aニアクリル酸、 M:2価アルコールN:2塩基
酸 (特殊アクリレートし)また、放射線硬化
型オリゴマーとしては、下記一般式で示される多官能オ
リゴエステルアクリレートやウレタンエラストマーのア
クリル変性体、あるいはこれらのものにC0OH等の官
能基が導入されたもの等が挙げられる。8) CH2=CHCOO-(CH2CH20)4
C0CH=CH2 (special acrylate H) CH2CH2C00CH=CH2 (special acrylate I) (special acrylate J) A Niacrylic acid, X: Polyhydric alcohol Y: Polybasic acid (Special acrylate K) 12) A-
(-M-N+-M-An Aniacrylic acid, M: dihydric alcohol N: dibasic acid (special acrylate) In addition, radiation-curable oligomers include polyfunctional oligoester acrylates and urethane represented by the general formula below. Examples include acrylic modified elastomers, and those into which functional groups such as C0OH are introduced.
(式中R,、R2:アルキル、n:整数)また、熱可塑
性樹脂を放射線感応変性することによって得られる放射
線硬化型化合物を用いてもよい。(In the formula, R,, R2: alkyl, n: integer) Furthermore, a radiation-curable compound obtained by radiation-sensitizing modification of a thermoplastic resin may be used.
このような放射線硬化性樹脂の具体例としては、ラジカ
ル重合性を有する不飽和二重結合を示すアクリル酸、メ
タクリル酸、あるいはそれらのエステル化合物のような
アクリル系二重結合、ジアリルフタレートのようなアリ
ル系二重結合、マレイン酸、マレイン酸誘導体等の不飽
和結合等の、放射線照射による架橋あるいは重合する基
を熱可塑性樹脂の分子中に含有、または導入した樹脂で
ある。Specific examples of such radiation-curable resins include acrylic acid, methacrylic acid, or acrylic double bonds such as ester compounds thereof, and diallylphthalate, which exhibits an unsaturated double bond that has radical polymerizability. It is a thermoplastic resin in which groups that can be crosslinked or polymerized by radiation irradiation, such as allylic double bonds and unsaturated bonds such as maleic acid and maleic acid derivatives, are contained or introduced into the molecule of the thermoplastic resin.
放射線硬化性樹脂に変性できる熱可塑性樹脂の例として
は、塩化ビニル系共重合体、飽和ポリニスルチル樹脂、
ポリビニルアルコール系樹脂、エポキシ系樹脂、フェノ
キシ系樹脂、繊維素誘導体等を挙げることができる。Examples of thermoplastic resins that can be modified into radiation-curable resins include vinyl chloride copolymers, saturated polyvinyl sulfate resins,
Examples include polyvinyl alcohol resins, epoxy resins, phenoxy resins, cellulose derivatives, and the like.
その他、放射線感応変性に用いることのできる樹脂とし
ては、多官能ポリエステル樹脂、ポリエーテルエステル
樹脂、ポリビニルピロリドン樹脂および誘導体(pvp
オレフィン共重合体)、ポリアミド樹脂、ポリイミド樹
脂、フェノール樹脂、スピロアセタール樹脂、水酸基を
含有するアクリルエステルおよびメタクリルエステルを
重合成分として少くとも一種含むアクリル系樹脂等も有
効である。Other resins that can be used for radiation sensitivity modification include polyfunctional polyester resins, polyether ester resins, polyvinylpyrrolidone resins, and derivatives (pvp
Also effective are acrylic resins containing at least one of olefin copolymers), polyamide resins, polyimide resins, phenol resins, spiroacetal resins, hydroxyl group-containing acrylic esters, and methacrylic esters as polymerization components.
このような放射線硬化型化合物の有機保護コート層6の
Tは、5μs厚にて100〜5000g/m2・24h
rs程度、また、膜厚は0.1〜30戸、より好ましく
は1〜10戸である。この膜厚が0.IIa未満になる
と、一様な膜を形成できず、湿度が高い雰囲気中での防
湿効果が十分でなく、磁性薄膜層4の耐久性が向上しな
い。 また、30#Ixnをこえると、樹脂膜の硬化の
際に伴う収縮により記録媒体の反りや保護膜中のクラッ
クが生じ、実用に耐えない。The T of the organic protective coating layer 6 made of such a radiation-curable compound is 100 to 5000 g/m2 for 24 hours at a thickness of 5 μs.
rs, and the film thickness is 0.1 to 30 layers, more preferably 1 to 10 layers. This film thickness is 0. If it is less than IIa, a uniform film cannot be formed, the moisture-proofing effect in a humid atmosphere will not be sufficient, and the durability of the magnetic thin film layer 4 will not improve. If it exceeds 30#Ixn, the recording medium may warp or cracks may occur in the protective film due to shrinkage during curing of the resin film, making it unsuitable for practical use.
このような塗膜は、通常、スピンナーコート、グラビア
塗布、スプレーコート、ディッピング等、種々の公知の
方法を組み合わせて設層すればよい。 この時の塗膜の
設層条件は、塗膜組成の混合物の粘度、目的とする塗膜
厚さ等を考慮して適宜決定すればよい。Such a coating film may usually be formed by combining various known methods such as spinner coating, gravure coating, spray coating, and dipping. The conditions for forming the coating film at this time may be appropriately determined in consideration of the viscosity of the mixture of coating film composition, the intended coating thickness, etc.
このような塗膜を硬化させて保護層とするには、電子線
、紫外線等の放射線を塗膜に照射すればよい。In order to cure such a coating film to form a protective layer, the coating film may be irradiated with radiation such as electron beams or ultraviolet rays.
電子線を用いる場合、放射線特性としては、加速電圧1
00〜750KV、好ましくは150〜300KVの放
射線加速器を用い、吸収線量を0.5〜20メガラツト
になるように照射するのが好都合である。When using an electron beam, the radiation characteristics include acceleration voltage 1
It is convenient to use a radiation accelerator of 00 to 750 KV, preferably 150 to 300 KV, and to irradiate with an absorbed dose of 0.5 to 20 Megarat.
一方、紫外線を用いる場合には、前述したような放射線
硬化型化合物の中には、通常、光重合増感剤が加えられ
る。On the other hand, when ultraviolet rays are used, a photopolymerizable sensitizer is usually added to the radiation-curable compound as described above.
この光重合増感剤としては、従来公知のものでよく、例
えばベンゾインメチルエーテル、ベンゾインエチルエー
テル、α−メチルベンゾイン、α−クロルデオキシベン
ゾイン等のベンゾイン系、ベンゾフェノン、アセトフェ
ノン、ビスジアルキルアミノベンゾフェノン等のケトン
類、アセドラキノン、フエナントラキノン等のキノン類
、ベンジルジスルフィド、テトラメチルチウラムモノス
ルフィド等のスルフィド類等を挙げることができる。
光重合増感剤は樹脂固形分に対し、0.1〜10重量%
の範囲が望ましい。The photopolymerization sensitizer may be a conventionally known one, such as benzoin type sensitizers such as benzoin methyl ether, benzoin ethyl ether, α-methylbenzoin, α-chlordeoxybenzoin, benzophenone, acetophenone, bisdialkylaminobenzophenone, etc. Examples include ketones, quinones such as acedraquinone and phenanthraquinone, and sulfides such as benzyl disulfide and tetramethylthiuram monosulfide.
The photopolymerization sensitizer is 0.1 to 10% by weight based on the resin solid content.
A range of is desirable.
そして、このような光重合増感剤と放射線硬化型化合物
を含有する塗膜を紫外線によって硬化させるには、公知
の種々の方法に従えばよい。In order to cure a coating film containing such a photopolymerizable sensitizer and a radiation-curable compound using ultraviolet rays, various known methods may be used.
たとえば、キセノン放電管、水素放電管などの紫外線電
球等を用いればよい。For example, an ultraviolet light bulb such as a xenon discharge tube or a hydrogen discharge tube may be used.
このような有機保護コート層6の上には、接着剤層7を
介して保護板8が設けられることが好ましい。Preferably, a protective plate 8 is provided on the organic protective coat layer 6 with an adhesive layer 7 interposed therebetween.
すなわち、前記の基板2の裏面(磁性薄膜層4を設けて
いない側の面)側からのみ記録・再生を行う、いわゆる
片面記録の場合には、この保護板8を用いることが好ま
しい。−
このような保護板8の樹脂材質は特別に透明性等を要求
されることはなく、種々の樹脂、例えば、ポリエチレン
、ポリ塩化ビニル、ポリスチレン、ポリプロピレン、ポ
リビニルアルコール、メタクリル樹脂、ポリアミド、ポ
リ塩化ビニリデン、ポリカーボネート、ポリアセタール
、ふっ素樹脂等の各種熱可塑性樹脂、フェノール樹脂、
ユリア樹脂、不飽和ポリエステル樹脂、ポリウレタン、
アルキド樹脂、メラミン樹脂、エポキシ樹脂、ケイ素樹
脂等の各種熱可塑性樹脂等が使用可能である。That is, in the case of so-called single-sided recording, in which recording and reproduction are performed only from the back side of the substrate 2 (the side on which the magnetic thin film layer 4 is not provided), it is preferable to use this protection plate 8. - The resin material of the protective plate 8 is not particularly required to have transparency, and may be made of various resins such as polyethylene, polyvinyl chloride, polystyrene, polypropylene, polyvinyl alcohol, methacrylic resin, polyamide, polychloride, etc. Various thermoplastic resins such as vinylidene, polycarbonate, polyacetal, fluororesin, phenolic resin,
urea resin, unsaturated polyester resin, polyurethane,
Various thermoplastic resins such as alkyd resins, melamine resins, epoxy resins, and silicone resins can be used.
なお、ガラス、セラミック等の各種無機材質を保護板8
として用いてもよい。In addition, various inorganic materials such as glass and ceramics can be protected by a protective plate 8.
It may also be used as
このものの形状、寸法等は上記の基板2のそれとほぼ同
様とされる。The shape, dimensions, etc. of this material are substantially the same as those of the substrate 2 described above.
このような保護板8は、前述したように接着剤層7を介
して接着される。 接着剤層の膜厚は1〜100−程度
とされる。Such a protection plate 8 is adhered via the adhesive layer 7 as described above. The thickness of the adhesive layer is approximately 1 to 100 mm.
他方、上記の保護板8を用いる代りに、上記の磁性薄膜
層4、保護層3,5、有機保護コート層6等を有する基
板をさらに1セット用いて、内磁性薄膜層を内側にして
対向させて、接着剤層7を用いて貼り合せて、両基板の
裏面側から書き込みを行なう、いわゆる両面記録タイプ
としてもよい。 さらに、これらの基板2や保護板8の
裏面(磁性薄膜層4を設けていない側の面)または裏面
および側面には各種保護膜としてのコーティング層9を
設層することが好ましい。On the other hand, instead of using the above protection plate 8, another set of substrates having the above magnetic thin film layer 4, protective layers 3, 5, organic protective coating layer 6, etc. are used, and the inner magnetic thin film layers are placed on the inside to face each other. A so-called double-sided recording type may be used in which the substrates are bonded together using an adhesive layer 7 and writing is performed from the back sides of both substrates. Furthermore, it is preferable to provide a coating layer 9 as various protective films on the back surface (the surface on which the magnetic thin film layer 4 is not provided) or on the back surface and side surfaces of the substrate 2 and the protective plate 8.
コーティング層9の材質としては、前述した有機保護コ
ート層6の材質と同様なものとしてもよい。The material of the coating layer 9 may be the same as that of the organic protective coat layer 6 described above.
■ 発明の効果
本発明の光記録媒体は、記録層、特に磁性薄膜層の上面
および下面にそれぞれ所定の水分透過量を示す保護層を
有し、これらの保護層および記録層を完全に覆うように
有機保護コート層を有する。■ Effects of the Invention The optical recording medium of the present invention has a protective layer that exhibits a predetermined amount of moisture permeation on the upper and lower surfaces of the recording layer, particularly the magnetic thin film layer, and is coated so as to completely cover the protective layer and the recording layer. has an organic protective coating layer.
従って、本発明の媒体は、例えば高湿下でのビートサイ
クルに対する耐久性、高温高湿下での耐食性にきわめて
優れる。Therefore, the medium of the present invention has excellent durability against beat cycles under high humidity and corrosion resistance under high temperature and high humidity, for example.
■ 発明の具体的実施例
以下、本発明の実施例を挙げ、本発明をさらに詳細に説
明する。(2) Specific Examples of the Invention The present invention will be described in more detail below with reference to Examples.
[実施例1コ
直径13cm、厚さ1.2mmのビスフェノールA系の
光デイスクグレードポリカーボネート樹脂からなる基板
2上に、ホウケイ酸ガラスの下地保護層を高周波マグネ
トロンスパッタ(ターゲット組成(wt%)(Sin2
:50.O。[Example 1] A base protective layer of borosilicate glass was applied by high-frequency magnetron sputtering (target composition (wt%) (Sin2
:50. O.
B203 :45.O,Na2O:3.O。B203:45. O, Na2O: 3. O.
x2o:2.0))によって膜厚400人に設層し、さ
らにこの上面に、誘電体層(Si3N4)を高周波マグ
ネトロンスパッタによって膜厚800人に設層し、第1
の無機保護層3とした。x2o: 2.0)) to a thickness of 400 mm, and on top of this, a dielectric layer (Si3N4) was formed to a thickness of 800 mm by high frequency magnetron sputtering.
The inorganic protective layer 3 was made as follows.
この第1の無機保護層3のJIS Z 0208にょる
Tは、2.4g/m’ ・24hrsであった。The T of this first inorganic protective layer 3 according to JIS Z 0208 was 2.4 g/m'·24 hrs.
このような第1の無機保護層3の上に21at%Tb、
68at%Fe、7at%Co、4at%Cr合金薄膜
を、スパッタリングによって厚さ800人に設層し、磁
性薄膜層4とした。On such a first inorganic protective layer 3, 21 at% Tb,
A 68 at % Fe, 7 at % Co, and 4 at % Cr alloy thin film was deposited to a thickness of 800 mm by sputtering to form the magnetic thin film layer 4 .
なお、ターゲットは、Feターゲットに、Tb、Co、
Crチップをのせたものを用いた。In addition, the target is Fe target, Tb, Co,
A device with a Cr chip mounted thereon was used.
さらに、この磁性薄膜層4上に、ホウケイ酸ガラスの第
2の無機保護層5を高周波マグネトロンスパッタ(ター
ゲットは前記の第1の無機保護層と同じ)により膜厚1
000人に設層した。 この第2の無機保護層のTは、
1.6g/m’・24 hrsであった。Furthermore, on this magnetic thin film layer 4, a second inorganic protective layer 5 of borosilicate glass is applied to a thickness of 1 by high frequency magnetron sputtering (the target is the same as the first inorganic protective layer).
000 people were set up. T of this second inorganic protective layer is
It was 1.6 g/m'・24 hrs.
この第2の無機保護層5の上面ならびに第1の無機保護
層3、磁性薄膜層4および第2の無機保護層5の側面を
完全に覆うように、下記の放射線硬化型化合物を含む塗
布組成物を有機保護コート層6として、スピンナーコー
トで設層した。 なお、有機保護コート層6の設層領域
は積層体の内周面内側2mmの位置から外周面外側2m
mまでの位置とした。A coating composition containing the following radiation-curable compound is applied so as to completely cover the upper surface of the second inorganic protective layer 5 and the side surfaces of the first inorganic protective layer 3, magnetic thin film layer 4, and second inorganic protective layer 5. The material was applied as an organic protective coating layer 6 using a spinner coat. The organic protective coating layer 6 is applied from a position 2 mm inside the inner peripheral surface of the laminate to a position 2 m outside the outer peripheral surface of the laminate.
The position was set to m.
(塗布組成物)
多官能オリゴエステルアクリレート
100重量部
光増感剤 5重量部このような
塗布組成物を設層後、紫外線を15sec照射し架橋硬
化させ、硬化膜とした。 膜厚は5y1nあった。(Coating Composition) 100 parts by weight of polyfunctional oligoester acrylate 5 parts by weight of photosensitizer After the coating composition was formed, it was crosslinked and cured by irradiation with ultraviolet rays for 15 seconds to obtain a cured film. The film thickness was 5y1n.
以上のようにして光磁気記録媒体を得た。A magneto-optical recording medium was obtained as described above.
[実施例2]
第1の無機保護層を、Tが3.0g/d・24hrsで
あり、組成がSiOである膜厚800人のものとした他
は、実施例1と同様にして光磁気記録媒体を作製した。[Example 2] The magneto-optical process was carried out in the same manner as in Example 1, except that the first inorganic protective layer had a T of 3.0 g/d・24 hrs, a composition of SiO, and a film thickness of 800 mm. A recording medium was produced.
[比較例1]
有機保護コート層6を設けない他は、実施例1と同様に
して光磁気記録媒体を作製した。[Comparative Example 1] A magneto-optical recording medium was produced in the same manner as in Example 1 except that the organic protective coating layer 6 was not provided.
[比較例2]
有機保護コート層6を、第2の無機保護層5の上面なら
びに、第1の無機保護層3、磁性薄膜層4および第2の
無機保護層5の外周側のみに設け、他は、実施例1と同
様にして光磁気記録媒体を作製した。[Comparative Example 2] An organic protective coating layer 6 was provided only on the upper surface of the second inorganic protective layer 5 and on the outer peripheral sides of the first inorganic protective layer 3, the magnetic thin film layer 4, and the second inorganic protective layer 5, Otherwise, a magneto-optical recording medium was produced in the same manner as in Example 1.
[比較例3]
有機保護コート層6を、第2の無機保護層5の上面なら
びに、第1の無機保護層3、磁性薄膜層4および第2の
無機保護層5の外周側のみに設け、他は実施例2と同様
にして光磁気記録媒体を作製した。[Comparative Example 3] An organic protective coating layer 6 was provided only on the upper surface of the second inorganic protective layer 5 and on the outer peripheral sides of the first inorganic protective layer 3, the magnetic thin film layer 4, and the second inorganic protective layer 5, Otherwise, a magneto-optical recording medium was produced in the same manner as in Example 2.
[比較例4]
第2の無機保護層を、Tが4.8g/m’・24hrs
であり、組成がSiNである膜厚1000人のものとし
た他は、実施例1と同様にして光磁気記録媒体を作製し
た。[Comparative Example 4] T of the second inorganic protective layer was 4.8 g/m'・24 hrs
A magneto-optical recording medium was produced in the same manner as in Example 1, except that the composition was SiN and the film thickness was 1000.
[比較例5]
有機保護コート層6を、第2の無機保護層5の上面なら
びに、第1の無機保護層3、磁性薄膜層4および第2の
無機保護層5の外周側のみに設け、他は比較例4と同様
にして光磁気記録媒体を作製した。[Comparative Example 5] An organic protective coating layer 6 was provided only on the upper surface of the second inorganic protective layer 5 and on the outer peripheral sides of the first inorganic protective layer 3, the magnetic thin film layer 4, and the second inorganic protective layer 5, A magneto-optical recording medium was produced in the same manner as in Comparative Example 4 in other respects.
以上の各種光磁気記録媒体について、下記の特性を測定
した。The following characteristics were measured for the above various magneto-optical recording media.
(1)C/N比(保存劣化)
初期のC/N比と、80℃、80%RHにて500時間
保存後のC/N比の変化(劣化)量を下記の条件で測定
した。(1) C/N ratio (deterioration on storage) The initial C/N ratio and the amount of change (deterioration) in the C/N ratio after storage for 500 hours at 80° C. and 80% RH were measured under the following conditions.
回転スピード 4 m/sec搬送
周波数 I MHz分解能
30 KHz記録パワー(830n
m) 3〜6mW再生パワー(830nm)
1 mW(2)ピットエラーレート
初期と、80℃、80%R)Iにて5oo時間保存後の
EFM信号のピットエラーレートを測定した。Rotation speed 4 m/sec Carrier frequency I MHz resolution
30 KHz recording power (830n
m) 3-6mW reproduction power (830nm)
The pit error rate of the EFM signal was measured at the initial stage of 1 mW (2) pit error rate and after storage for 50 hours at 80° C. and 80% R)I.
結果を表1に示す。The results are shown in Table 1.
表 1
C/N比 ビットエラーレート(d
B) (x 1o−6
)初 期 保存後 初 期 保存後実施
例1 52 52 3 4
実施例2 50 50 3.5
4.5比較例4 52 52 3
150なお、このような効果は、相転移型のTe
−Ge、TeaX、Te−3e等の記録層でも同様に
実現した。Table 1 C/N ratio Bit error rate (d
B) (x 1o-6
) Initial period After storage Initial period After storage Example 1 52 52 3 4
Example 2 50 50 3.5
4.5 Comparative Example 4 52 52 3
150 Note that such an effect is caused by phase transition type Te.
-Ge, TeaX, Te-3e, and other recording layers were similarly realized.
以上の結果より本発明の効果は明らかである。From the above results, the effects of the present invention are clear.
第1図は、本発明の光記録媒体の一例を示す光磁気記録
媒体の断面図である。
符号の説明
1・・・光磁気記録媒体、 2・・・基板3・・・第
1の無機保護層、4・・・磁性薄膜層、5・・・第2の
無機保護層、
6・・・有機保護コート層、
7・・・接着剤層、 8・・・保護板9・・・コ
ーティング層FIG. 1 is a sectional view of a magneto-optical recording medium, which is an example of the optical recording medium of the present invention. Explanation of symbols 1... Magneto-optical recording medium, 2... Substrate 3... First inorganic protective layer, 4... Magnetic thin film layer, 5... Second inorganic protective layer, 6...・Organic protective coat layer, 7... Adhesive layer, 8... Protective plate 9... Coating layer
Claims (2)
保護層とを順次積層して積層体を設け、この積層体を完
全に覆うように、有機保護コート層を設層した光記録媒
体であって、第2の無機保護層の40℃における水分透
過量 (JISZ0208)が2g/m^2・24hrs以下
であることを特徴とする光記録媒体。(1) A first inorganic protective layer, a recording layer, and a second inorganic protective layer are sequentially laminated on a substrate to form a laminate, and an organic protective coat layer is provided to completely cover this laminate. An optical recording medium characterized in that the second inorganic protective layer has a water permeation amount (JIS Z0208) at 40° C. of 2 g/m^2·24 hrs or less.
における水分透過量(JISZ0208)が3g/m^
2・24hrs以下である特許請求の範囲第1項に記載
の光記録媒体。(2) The substrate is made of resin, and the temperature of the first inorganic protective layer is 40°C.
Moisture permeation amount (JISZ0208) is 3g/m^
The optical recording medium according to claim 1, which has a time of 2.24 hrs or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62027959A JP2523301B2 (en) | 1987-02-09 | 1987-02-09 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62027959A JP2523301B2 (en) | 1987-02-09 | 1987-02-09 | Optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63195841A true JPS63195841A (en) | 1988-08-12 |
JP2523301B2 JP2523301B2 (en) | 1996-08-07 |
Family
ID=12235425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62027959A Expired - Lifetime JP2523301B2 (en) | 1987-02-09 | 1987-02-09 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2523301B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003044241A1 (en) * | 2001-11-19 | 2003-05-30 | Nikko Materials Company, Limited | Spattering target for use in forming preventive film for optical recording medium, method for preparing the target, and optical recording medium having preventive film formed by use of the target |
-
1987
- 1987-02-09 JP JP62027959A patent/JP2523301B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003044241A1 (en) * | 2001-11-19 | 2003-05-30 | Nikko Materials Company, Limited | Spattering target for use in forming preventive film for optical recording medium, method for preparing the target, and optical recording medium having preventive film formed by use of the target |
Also Published As
Publication number | Publication date |
---|---|
JP2523301B2 (en) | 1996-08-07 |
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