JPS63184337A - Wet etching device - Google Patents
Wet etching deviceInfo
- Publication number
- JPS63184337A JPS63184337A JP1572187A JP1572187A JPS63184337A JP S63184337 A JPS63184337 A JP S63184337A JP 1572187 A JP1572187 A JP 1572187A JP 1572187 A JP1572187 A JP 1572187A JP S63184337 A JPS63184337 A JP S63184337A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- chemicals
- chemical
- filter
- chemical tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001039 wet etching Methods 0.000 title claims description 13
- 239000000126 substance Substances 0.000 claims abstract description 85
- 239000007788 liquid Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000000356 contaminant Substances 0.000 claims abstract description 13
- 238000007599 discharging Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はウェットエツチング装置、特にウェハーへのパ
ーティクルや汚染物の付着量を少なくするエツチングシ
ーケンスを有するウェットエツチング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wet etching apparatus, and more particularly to a wet etching apparatus having an etching sequence that reduces the amount of particles and contaminants attached to a wafer.
第3図は従来のウェットエツチング装置の系統図の一例
である。この装置を用いた場合のエツチングのシーケン
スはます給液パイプ8を通して貯液槽4に貯えられた薬
液はポンプ6にてフィルター5を介して薬液槽内槽2へ
注入される。その後、薬液槽の内槽2より薬液槽の外槽
1ヘオーバーフローした薬液は薬液循環パイプ7bを通
って薬液循環パイプ7aに入り再びポンプ6にてフィル
ター58を介して薬液槽の内槽2へ注入される。これに
より薬液は常にフィルター5を通ってはいるもののその
量は微量であるので、この状態において単位エツチング
処理を複数回行うと、処理回数が増えるに従って薬液槽
内の薬液中のパーティクルや汚染物も増加してくるので
ウェハーへの付着量も多くなる。 7cはパイプ、9は
排液パイプ、10a、10b。FIG. 3 is an example of a system diagram of a conventional wet etching apparatus. The etching sequence when this device is used is that the chemical solution stored in the liquid storage tank 4 is injected into the inner tank 2 of the chemical solution tank via the filter 5 by the pump 6 through the liquid supply pipe 8. Thereafter, the overflowing chemical liquid from the inner tank 2 of the chemical liquid tank to the outer tank 1 of the chemical liquid tank passes through the chemical liquid circulation pipe 7b, enters the chemical liquid circulation pipe 7a, and returns to the inner tank 2 of the chemical liquid tank via the filter 58 by the pump 6. Injected. As a result, although the chemical liquid always passes through the filter 5, the amount is very small, so if the unit etching process is performed multiple times in this state, particles and contaminants in the chemical liquid in the chemical liquid tank will increase as the number of processes increases. As the amount increases, the amount of adhesion to the wafer also increases. 7c is a pipe, 9 is a drain pipe, 10a, 10b.
10c、llc、lld、lie、llf、l1g、l
lhはバルブである。10c,llc,lld,lie,llf,l1g,l
lh is a valve.
上述した従来のウェットエツチング装置は、定常的な微
量の循環フィルタリング機構を持つ薬液槽内の薬液で複
数回の単位エツチング処理を行っていたため、処理回数
が増加するに従ってウェハ−へのパーティクルや汚染物
の付着量が多くなり、安定した高い歩留りを得ることが
できないという欠点がある。The conventional wet etching apparatus described above performs unit etching processes multiple times using a chemical solution in a chemical tank that has a constant circulation filtering mechanism. The disadvantage is that the amount of deposited is large, making it impossible to obtain a stable high yield.
本発明の目的は安定した高い歩留りを得るウェットエツ
チング装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a wet etching apparatus that provides a stable and high yield.
上述した従来のウェットエツチング装置に対し、本発明
はウェハーを薬液槽に入れてエツチング処理を行う際に
、常時薬液槽底部からパーティクルや汚染物の少ない薬
液を注入してオーバーフローさせることにより、薬液中
のパーティクル数が増加してウェハーに付着および再付
着することを防ぎ、また単位エツチング処理後に薬液槽
内の薬液を全て排液することによって連続処理の際に問
題となる後からの処理がその前の処理の影響を受けてし
まうことも防ぐことができるので、ウェハーに付着する
パーティクルや汚染物の量を非常に低いレベルに保持す
るという独創的内容を有する。In contrast to the above-mentioned conventional wet etching apparatus, the present invention, when placing a wafer in a chemical bath and performing etching processing, constantly injects a chemical solution with few particles and contaminants from the bottom of the chemical bath and overflows the chemical solution. By preventing the increase in the number of particles from adhering to and re-adhering to the wafer, and by draining all the chemical solution in the chemical bath after unit etching processing, subsequent processing, which can be a problem during continuous processing, can be prevented. It has the unique content of keeping the amount of particles and contaminants adhering to the wafer at a very low level, since it can also prevent the wafer from being affected by other processes.
本発明のウェットエツチング装置はパーティクルや汚染
物の少ない薬液をフィルターを介して薬液槽の内槽底部
から注入して薬液を薬液槽の外槽に大流量にてオーバー
フローさせることにより、薬液槽内の薬液を置換する機
構と、単位エツチング処理が終了しウェハーを入れたキ
ャリアを引き抜いた後、薬液を薬液槽底部より排液し、
フィルターを介して貯液槽に戻す機構とを有することを
特徴とするものである。The wet etching apparatus of the present invention injects a chemical solution with few particles and contaminants from the bottom of the inner tank through a filter, and overflows the chemical solution into the outer tank at a large flow rate, thereby cleaning the inside of the chemical tank. There is a mechanism for replacing the chemical solution, and after the unit etching process is completed and the carrier containing the wafer is pulled out, the chemical solution is drained from the bottom of the chemical tank.
It is characterized by having a mechanism for returning the liquid to the storage tank via a filter.
以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
(実施例1) 第1図は本発明の第1の実施例を示す構成図である。(Example 1) FIG. 1 is a block diagram showing a first embodiment of the present invention.
第1図に示すように本実施例の薬液槽は内外2重構造で
あり、内槽2の底部にはフィルター5a。As shown in FIG. 1, the chemical solution tank of this embodiment has a double structure, inside and outside, and a filter 5a is provided at the bottom of the inner tank 2.
5b、ポンプ6a、バルブ10g、 10h、薬液循環
パイプ7aを介して貯液槽4を接続するとともに、バル
ブ10a、 10b、 10c、 10d、ポンプ6b
、薬液循環パイプ7bを介して貯液槽4を接続する。ま
た内槽2と外槽1とをバルブ10a′を介して接続する
。9は排液パイプ、8は給液パイプ、 10e、 10
fはバルブである。5b, pump 6a, valves 10g, 10h, connected to liquid storage tank 4 via chemical circulation pipe 7a, valves 10a, 10b, 10c, 10d, pump 6b
, and the liquid storage tank 4 is connected via the chemical liquid circulation pipe 7b. Further, the inner tank 2 and the outer tank 1 are connected via a valve 10a'. 9 is a drain pipe, 8 is a liquid supply pipe, 10e, 10
f is a valve.
3はウェハーである。3 is a wafer.
ます給液パイプ8を通して貯液槽4に貯えられた薬液は
ポンプ6aにてフィルター58を介して底部より薬液槽
内槽2へ注入される。その後薬液槽内槽2より薬液槽外
槽1へオーバーフローした薬液はポンプ6bにてフィル
ター5bを介して貯液槽4に戻る。以上のようにして薬
液槽内槽2内では常にフィルターを通した薬液が底部よ
り注入され、余剰のパーティクルや汚染物を多く含む薬
液はオーバーフローしている状態となる。この状態にお
いて単位エツチング処理を行った後、バルブ10aを開
いて薬液槽内の薬液は全てポンプ6bにてフィルター5
bを介して貯液槽4へ戻す。再び次の単位エツチング処
理を行う際には貯液槽4から薬液循環パイプ7a、フィ
ルター58を介してパーティクルの少ない薬液が供給さ
れる。これによりエツチング進行中の薬液槽内槽2内に
おいては常時薬液中のパーティクルや汚染物を非常に低
いレベルに保持できるので、ウェハーへの付着量も少な
くすることができる。The chemical liquid stored in the liquid storage tank 4 through the liquid supply pipe 8 is injected into the internal tank 2 of the chemical liquid tank from the bottom via the filter 58 by the pump 6a. Thereafter, the chemical solution overflowing from the inner tank 2 to the outer tank 1 is returned to the storage tank 4 via the filter 5b by the pump 6b. As described above, in the inner tank 2 of the chemical liquid tank, the chemical liquid that has passed through the filter is always injected from the bottom, and the chemical liquid containing a large amount of excess particles and contaminants is in an overflow state. After performing the unit etching process in this state, the valve 10a is opened and all of the chemical solution in the chemical solution tank is pumped through the filter 5 by the pump 6b.
It is returned to the liquid storage tank 4 via b. When performing the next unit etching process again, a chemical solution containing few particles is supplied from the liquid storage tank 4 via the chemical solution circulation pipe 7a and the filter 58. As a result, particles and contaminants in the chemical solution can be kept at a very low level at all times in the chemical solution tank inner tank 2 while etching is in progress, so that the amount of adhesion to the wafer can also be reduced.
(実施例2)
第2図は本発明の第2の実施例を示す構成図であり1本
実施例は第1の実施例の薬液槽内槽2の底部の形状を丸
く球面状に加工して用いた場合である。薬液槽の底部が
なめらかであるので、薬液溜りができることがなく薬液
の置換率が高くなるので、第1の実施例に比較して更に
ゴミ付着量を少なくすることができるという利点がある
。(Example 2) Fig. 2 is a configuration diagram showing a second example of the present invention. In this example, the bottom shape of the inner tank 2 of the chemical liquid tank of the first example is processed into a rounded and spherical shape. This is the case when used as follows. Since the bottom of the chemical solution tank is smooth, no chemical pools are formed and the replacement rate of the chemical solution is increased, so there is an advantage that the amount of attached dust can be further reduced compared to the first embodiment.
以上説明したように本発明によるウェットエツチング装
置は、ウェハーを薬液槽に入れたままの状態、すなわち
エツチング進行中にパーティクルや汚染物の少ない薬液
をフィルターを介してポンプにて薬液槽底部から注入し
て薬液をオーバーフローさせることにより、薬液槽内の
薬液を置換する機構と、単位エツチング処理が終了しウ
ェハーを入れたキャリアを引き抜いた後、薬液を薬液槽
底部より排液し、フィルターを介して貯液槽に戻す機構
とを有しているため、エツチング進行中の薬液槽内にお
いては、常時薬液の置換が行われ、薬液中のパーティク
ルや汚染物の量を非常に低いレベルに保持できることか
ら、ウェハーへの付着量も少なくすることができ、安定
した高歩留りを得ることができる効果を有するものであ
る。As explained above, the wet etching apparatus according to the present invention uses a pump to inject a chemical with few particles or contaminants from the bottom of the chemical tank through a filter while the wafer is placed in the chemical tank, that is, while etching is in progress. There is a mechanism that replaces the chemical solution in the chemical tank by overflowing the chemical solution with the device, and a mechanism that drains the chemical solution from the bottom of the chemical tank and stores it through a filter after the unit etching process is completed and the carrier containing the wafer is pulled out. Since it has a mechanism to return the chemical to the liquid tank, the chemical liquid is constantly replaced in the chemical liquid tank while etching is in progress, and the amount of particles and contaminants in the chemical liquid can be kept at a very low level. This has the effect of reducing the amount of adhesion to the wafer and achieving a stable high yield.
第1図は本発明のウェットエツチング装置の実施例1の
系統図、第2図は本発明のウェットエツチング装置の実
施例2の系統図、第3図は従来のウェットエツチング装
置の系統図である。
1・・・薬液槽外槽 2・・・薬液槽内槽3・
・・ウェハー 4・・・貯液槽5a 、 5
b・・・フィルター 6a 、 6b・・・ポン
プ7a 、 7b・・・薬液循環パイプ 8・・・給液
パイプ9・・・排液パイプFIG. 1 is a system diagram of Embodiment 1 of the wet etching apparatus of the present invention, FIG. 2 is a system diagram of Embodiment 2 of the wet etching apparatus of the present invention, and FIG. 3 is a system diagram of a conventional wet etching apparatus. . 1... Outer tank for chemical solution tank 2... Inner tank for chemical solution tank 3.
...Wafer 4...Liquid storage tank 5a, 5
b...Filter 6a, 6b...Pump 7a, 7b...Medical solution circulation pipe 8...Liquid supply pipe 9...Drainage pipe
Claims (1)
を介して薬液槽の内槽底部から注入して薬液を薬液槽の
外槽に大流量にてオーバーフローさせることにより、薬
液槽内の薬液を置換する機構と、単位エッチング処理が
終了し、ウェハーを入れたキャリアを引き抜いた後、薬
液を薬液槽底部より排液しフィルターを介して貯液槽に
戻す機構とを有することを特徴とするウェットエッチン
グ装置。(1) The chemical liquid in the chemical liquid tank is replaced by injecting the chemical liquid with few particles and contaminants from the bottom of the inner tank through a filter and overflowing the chemical liquid into the outer tank of the chemical liquid tank at a large flow rate. A wet etching apparatus comprising: a mechanism; and a mechanism that drains the chemical solution from the bottom of the chemical tank and returns it to the liquid storage tank via a filter after unit etching processing is completed and the carrier containing the wafer is pulled out. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1572187A JPS63184337A (en) | 1987-01-26 | 1987-01-26 | Wet etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1572187A JPS63184337A (en) | 1987-01-26 | 1987-01-26 | Wet etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63184337A true JPS63184337A (en) | 1988-07-29 |
Family
ID=11896623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1572187A Pending JPS63184337A (en) | 1987-01-26 | 1987-01-26 | Wet etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63184337A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0294435A (en) * | 1988-09-29 | 1990-04-05 | Nec Corp | Etching apparatus |
US5227001A (en) * | 1990-10-19 | 1993-07-13 | Integrated Process Equipment Corporation | Integrated dry-wet semiconductor layer removal apparatus and method |
-
1987
- 1987-01-26 JP JP1572187A patent/JPS63184337A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0294435A (en) * | 1988-09-29 | 1990-04-05 | Nec Corp | Etching apparatus |
US5227001A (en) * | 1990-10-19 | 1993-07-13 | Integrated Process Equipment Corporation | Integrated dry-wet semiconductor layer removal apparatus and method |
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