JPS63182288A - Production of single crystal of iii-v group compound - Google Patents
Production of single crystal of iii-v group compoundInfo
- Publication number
- JPS63182288A JPS63182288A JP1307987A JP1307987A JPS63182288A JP S63182288 A JPS63182288 A JP S63182288A JP 1307987 A JP1307987 A JP 1307987A JP 1307987 A JP1307987 A JP 1307987A JP S63182288 A JPS63182288 A JP S63182288A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- seed crystal
- single crystal
- furnace
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 63
- 150000001875 compounds Chemical class 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 10
- 239000000155 melt Substances 0.000 abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 4
- 230000000737 periodic effect Effects 0.000 abstract 2
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- -1 In-8b Chemical class 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- AQLMHYSWFMLWBS-UHFFFAOYSA-N arsenite(1-) Chemical compound O[As](O)[O-] AQLMHYSWFMLWBS-UHFFFAOYSA-N 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229940093920 gynecological arsenic compound Drugs 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ボート法によりＧａ −ＡｓやＩｎ −Ａ
ｓ。[Detailed Description of the Invention] [Industrial Application Field] This invention is a method for producing Ga-As and In-A by a boat method.
s.
さらにＩｎ−８ｂなどのｌ−Ｖ族Ｃヒ合物の単結晶を製
造するに際して、種結晶周辺部に多結晶や双晶が発生子
−るのを防止し、もって単結晶成長の安定化をはかるこ
とによって、収率（歩留）よく、大型の単結晶を製造す
る方法に関するものである。Furthermore, when producing single crystals of l-V group C arsenic compounds such as In-8b, it is possible to prevent polycrystals and twins from forming around the seed crystal, thereby stabilizing single crystal growth. The present invention relates to a method for producing large-sized single crystals with good yield (yield) by measurement.
従来、一般に１例えばＮ−Ｖ族化合物単結晶のうちの１
つであるＧａ−Ａｓ半導体が、第１図にボート法（水平
ブリッジマン法）の実旌装置が概略断面図で例示されて
いるように、 Ｇａ７を収容し、団結装置き台には種結
晶６を置いたボート５を、前記種結晶６が中央側（：位
置するように一方側に装入し、一方池方側にはＡｓ８を
装入して真空封着してなる石英封入管４を１合成炉２と
蒸気圧炉１を並設してなる加熱炉内に、前記ボート５が
合成炉２によって加熱され、一方前記Ａｓ８が蒸気圧炉
１によって加熱されるように炉芯管３を介して装置し、
この状態でボート装入部を合成炉２にエリＧａ−ＡＳの
融点である１２３８℃、あるいはこれ以上の温度に加熱
し、一方ＡＳ装入部を蒸気圧炉１により石英封入管４内
の雰囲気圧力がＧａ−Ａｓの解離圧に等しいか、あるい
はこれ以上の圧力になる工うなＡｓ加熱温度、すなわち
６１５〜６２０℃に加熱し、もって封入管内温度分布を
曲線９に示されるものとし、前記ポート５内の溶融Ｇａ
７と気化しｆｃＡｓ８とを合成してＧａ −Ａｓ ！！
ｉｌ Ｋを形成し、ついで合成炉２と蒸気王炉１と共に
左側方向に移動、すなわち単結晶の種結晶６から左側方
向に向ってポート５内の合成Ｇａ−Ａｓを単結晶成長さ
せることによって製造されている。Conventionally, generally 1, for example, 1 of N-V group compound single crystals.
As shown in Fig. 1, which is a schematic cross-sectional view of an actual device for the Boat method (horizontal Bridgman method), a Ga-As semiconductor containing Ga7 and a seed crystal in the base of the consolidation device are used. A quartz-sealed tube 4 is made by loading a boat 5 with a seed crystal 6 placed on one side so that the seed crystal 6 is located on the center side, and on the other hand, As8 is charged on the side of the pond and vacuum-sealed. A furnace core tube 3 is installed in a heating furnace formed by arranging a synthesis furnace 2 and a steam pressure furnace 1 in parallel so that the boat 5 is heated by the synthesis furnace 2 and the As 8 is heated by the steam pressure furnace 1. device via
In this state, the boat charging section is heated to the synthesis furnace 2 to 1238°C, which is the melting point of EriGa-AS, or higher, while the AS charging section is heated to the atmosphere inside the quartz-filled tube 4 using the steam pressure furnace 1. Assuring that the pressure is equal to or higher than the dissociation pressure of Ga-As, As is heated to a heating temperature of 615 to 620°C, the temperature distribution in the sealed tube is as shown by curve 9, and the port Molten Ga in 5
7 is vaporized and synthesized with fcAs8 to form Ga-As! !
il K, and then moved to the left side together with the synthesis furnace 2 and the steam king furnace 1, that is, by growing a single crystal of synthetic Ga-As in the port 5 from the single crystal seed crystal 6 to the left side. has been done.
しかし、第２図に第１図におけるボート５の詳細が概略
断面図で示されるように、ｖｃ置の僅かな機械的振動や
熱対流などによってＧａ−Ａｓ＃！Ａ夜７′に揺れが生
じるが、固体である種結晶６の密度が５．１６Ｓ’／ｉ
で、液体であるＧａ−Ａｓ融液７′の密度が５．７１ｆ
／ｉであり、このように両者間に密度差があるために、
同夜界面Ａで融液７′が種結晶６を持ち上げ、同時に融
液７′が種結晶６と種結晶置き台５ａ間の形成間隙に流
れ込んで急冷されるようになり、これが原因で多結晶や
双晶が発生するようになることから、満足な単結晶成長
を行なうことができない場合がしばしば起るものである
。However, as shown in FIG. 2 as a detailed schematic cross-sectional view of the boat 5 in FIG. A shaking occurs at night 7', but the density of the solid seed crystal 6 is 5.16S'/i
Then, the density of the liquid Ga-As melt 7' is 5.71f.
/i, and since there is a density difference between the two,
At the same night, the melt 7' lifts up the seed crystal 6 at the interface A, and at the same time, the melt 7' flows into the forming gap between the seed crystal 6 and the seed crystal stand 5a, and is rapidly cooled. Because of the occurrence of crystals and twins, it often happens that satisfactory single crystal growth cannot be achieved.
そこで１本発明者等は、上述のような観点から。 Therefore, the inventors of the present invention, etc., from the above-mentioned viewpoint.
ポート法によるＩＩ−Ｖ族化合物単結晶の製造に際して
、単結晶成長を安定的に行なうべく研究を行なつｔ結果
、ボートの種結晶置き台に置いｆｃ＠結晶をポートに機
械的に固定した状態で単結晶成長を行なうと、ポート内
の融液の揺れなどによって種結晶が持ち上げられること
がなり、シタがって種結晶と種結晶置き台間に間隙が形
成されることもなく、ましてやこの間隙に融液が流れ込
んで急冷されることもないので１種結晶周辺部に多結晶
や双晶が形成されることが皆無となり、単結晶成長を安
定的に行なうことができるようになるという知見を得た
のである。When manufacturing II-V group compound single crystals by the port method, we conducted research to ensure stable single crystal growth.As a result, we found that the fc@crystal was placed on the seed crystal stand of the boat and mechanically fixed to the port. When single crystal growth is performed in the port, the seed crystal is lifted up by the shaking of the melt in the port, and there is no possibility that the seed crystal will shift and form a gap between the seed crystal and the seed crystal stand. The knowledge that since the melt does not flow into the gap and be rapidly cooled, there is no formation of polycrystals or twins around the primary crystal, making it possible to stably grow the single crystal. I got it.
したがって、この発明は、上記知見にもとづいてなされ
たものであって、ポート法によりｆｉ−Ｖ族「ヒ合物単
結晶を製造するに際して、ポートの種結晶置き台に置い
た種結晶をボートに機械的に固定して単結晶成長の安定
化をはかり、大型の単結晶でも収率よ〈製造する方法に
特徴を有するものである。Therefore, the present invention has been made based on the above knowledge, and when producing a fi-V group "arsenite single crystal" by the port method, the seed crystal placed on the seed crystal holder of the port is transferred to the boat. It is mechanically fixed to stabilize single crystal growth, and even large single crystals are characterized by their yield and manufacturing method.
つぎに、この発明の方法を実施例により具体的に説明す
る。Next, the method of the present invention will be specifically explained using examples.
実物例 １
第３図に要部概略断面図で示されるように、ボート５の
哩結装置き台５ａに置いた種結晶６をカーボン糸１０で
縛ってボート５に機械的に固定し。Actual Example 1 As shown in the schematic sectional view of the main part in FIG. 3, the seed crystal 6 placed on the tying device platform 5a of the boat 5 was tied with carbon threads 10 and mechanically fixed to the boat 5.
この状態で第１図に示されるように石英封入管４内に装
入して、 Ｇａ−Ａｓ単結晶の合成および成長を行なつ
ｔつ
実施例 ２
第４図に要部概略断面図で示されるように、ポート５の
種結晶置き台５ａに７ランジ５ｂを設け。In this state, it is charged into a quartz-filled tube 4 as shown in FIG. 1, and a Ga-As single crystal is synthesized and grown. A 7-lunge 5b is provided on the seed crystal stand 5a of the port 5 so that the
このフランジ５ｂにより種結晶置き台５ａに置いた種結
晶６をはさみ込むようにして固定し、この状態でグラン
ジエントスリーズ法によりＩｎ −Ａｓ単結晶の合成を
行なったっ
実施例 ３
第４図に要部概略断面図で示されるように、ボート５の
種結晶置き台５ａに置いた種結晶６と。The seed crystal 6 placed on the seed crystal stand 5a was sandwiched and fixed by the flange 5b, and in this state, an In-As single crystal was synthesized by the gradient series method.Example 3 The main part is schematically shown in Fig. 4. As shown in the cross-sectional view, a seed crystal 6 is placed on a seed crystal stand 5a of a boat 5.
前記種結晶置き台５ａとに熱分解性窒化ボロン製のキャ
ップ１１をかぶせて、種結晶６を種結晶置き台５ａに機
械的に固定し、この状態でグランジエント法によりＧａ
−Ａｓ単結晶の合成を行なった。A cap 11 made of pyrolytic boron nitride is placed over the seed crystal holder 5a, and the seed crystal 6 is mechanically fixed to the seed crystal holder 5a.
-As single crystal was synthesized.
実施例１では僅かな機械的振動により、また実施例２，
３ではＡｓ蒸蒸気布部温度変動により、いずれも合成中
に融液に揺れが観察されたが１合成されたＩＩ−Ｖ族化
合物はいずれも完全な単結晶であった。In Example 1, by slight mechanical vibration, and in Example 2,
In No. 3, fluctuations in the melt were observed during the synthesis due to temperature fluctuations in the As vapor cloth, but in No. 1, the synthesized Group II-V compounds were all perfect single crystals.
上述のように、この発明の方法によれば、■−Ｖ族「ヒ
合物単結晶を大型でも収率よく製造することができるの
である。As described above, according to the method of the present invention, it is possible to produce single crystals of group (1)-V arsenide compounds in good yield even if they are large-sized.
第１図はポート法によるｌ−Ｖ族化合物単結晶の製造籾
種を示す概略断面図、第２図は第１図のポートの詳細を
示す概略断面図、第３〜５図はこの発明の実施例を示す
要部概略断面図である。
ｌ・・・蒸気王炉、 ２・・・合成炉。
３・・・炉芯管、 ４・・・石英封入管。
５・・・ボー） 、 ５ａ・・・種結装置き
台。
５ｂ・・・７ランジ、 ６・・・種結晶。
７−Ｇａ、 ８−Ａｓ。
９・・・封入管内温度分布曲線。
１０・・・カーボン糸、１１・・・キャップ。Fig. 1 is a schematic cross-sectional view showing the seed of rice produced by the port method to produce l-V group compound single crystals, Fig. 2 is a schematic cross-sectional view showing the details of the port in Fig. 1, and Figs. FIG. 2 is a schematic cross-sectional view of main parts showing an example. 1...Steam King Furnace, 2...Synthesis Furnace. 3... Furnace core tube, 4... Quartz-filled tube. 5...Bo), 5a...Seed setting device stand. 5b...7 lunges, 6...seed crystal. 7-Ga, 8-As. 9...Temperature distribution curve inside the sealed tube. 10...Carbon thread, 11...Cap.
Claims (1)
して、ボートの種結晶置き台に置いた種結晶をボートに
機械的に固定して単結晶成長の安定化をはかることを特
徴とするIII−Ｖ族化合物単結晶の製造方法。When producing a III-V group compound single crystal by the boat method, the seed crystal placed on the seed crystal stand of the boat is mechanically fixed to the boat to stabilize single crystal growth III- A method for producing a group V compound single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1307987A JPS63182288A (en) | 1987-01-22 | 1987-01-22 | Production of single crystal of iii-v group compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1307987A JPS63182288A (en) | 1987-01-22 | 1987-01-22 | Production of single crystal of iii-v group compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63182288A true JPS63182288A (en) | 1988-07-27 |
Family
ID=11823156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1307987A Pending JPS63182288A (en) | 1987-01-22 | 1987-01-22 | Production of single crystal of iii-v group compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63182288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04362084A (en) * | 1991-01-28 | 1992-12-15 | American Teleph & Telegr Co <Att> | Wafer preparation of semiconductor material |
-
1987
- 1987-01-22 JP JP1307987A patent/JPS63182288A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04362084A (en) * | 1991-01-28 | 1992-12-15 | American Teleph & Telegr Co <Att> | Wafer preparation of semiconductor material |
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