JPS6317581A - Driving circuit for light-emitting element - Google Patents

Driving circuit for light-emitting element

Info

Publication number
JPS6317581A
JPS6317581A JP61160775A JP16077586A JPS6317581A JP S6317581 A JPS6317581 A JP S6317581A JP 61160775 A JP61160775 A JP 61160775A JP 16077586 A JP16077586 A JP 16077586A JP S6317581 A JPS6317581 A JP S6317581A
Authority
JP
Japan
Prior art keywords
semiconductor laser
transistor
capacitor
emitting element
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61160775A
Other languages
Japanese (ja)
Inventor
Keiichi Imamura
圭一 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP61160775A priority Critical patent/JPS6317581A/en
Publication of JPS6317581A publication Critical patent/JPS6317581A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor

Abstract

PURPOSE:To inhibit the ringing due to the relaxation oscillation at the time a pulse modulation is applied to such a light-emitting element as a semiconductor laser and to remove the distortion of output pulse of the semiconductor laser by connecting a capacitor in parallel with a constant-current source. CONSTITUTION:When a high-frequency pulse is applied to the bases of transistors Q1 and Q2 through a comparator IC and a high-speed pulse modulation is applied to a semiconductor laser, high-frequency components appear by the relaxation oscillation of the semiconductor laser LD and could flow in a constant-current source transistor Q3 through the transistor Q1. But, as a capacitor C is connected between the common emitter connection of the transistors Q1 and Q2 and a negative power source, a large portion of the high-frequency components flows through this capacitor to the positive power source passing. Accordingly, it is eliminated that a signal amplitude current flowing through the constant-current source transistor Q3 becomes unstable by the high-frequency component. This prevent distortion of the photo output waveform of the semiconductor laser LD, which could be caused by ringing.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光通信、光情報処理装置等の光源に用いられる
半導体レーザ等の発光素子の駆動回路に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a drive circuit for a light emitting element such as a semiconductor laser used as a light source for optical communication, optical information processing equipment, etc.

〔従来の技術〕[Conventional technology]

半導体レーザは、光通信、光デイスク装置のピックアッ
プ、レーザプリンタの光源等の光情報処理システムのキ
ーデバイスとして非常に重要な地位を確立している。
Semiconductor lasers have established a very important position as key devices for optical information processing systems such as optical communications, pickups for optical disk devices, and light sources for laser printers.

半導体レーザをこれらのシステムの光源に用いる場合、
レーザ光出力を一定にして高速変調させる必要がある。
When using semiconductor lasers as the light source for these systems,
It is necessary to keep the laser light output constant and modulate it at high speed.

半導体レーザではその駆動電流を変調してやると光出力
が容易に変調でき、この点は他のレーザにはない大きな
特徴である。
Semiconductor lasers can easily modulate their optical output by modulating their drive current, which is a major feature that other lasers do not have.

半導体レーザを直接パルス駆動する場合には、発光遅れ
によるパターン効果の抑制のため、直流バイアス電流を
発撮しきい値電流付近に設定し、これに信号パルス電流
を重畳する方式が一般的に採用されている。第2図はこ
のような駆動回路の構成の一例を示す回路図である。
When directly pulse-driving a semiconductor laser, a method is generally adopted in which the DC bias current is set near the firing threshold current and a signal pulse current is superimposed on this in order to suppress pattern effects caused by light emission delays. has been done. FIG. 2 is a circuit diagram showing an example of the configuration of such a drive circuit.

第2図を参照して従来回路の構成を説明すると、2つの
トランジスタQ1.Q2は半導体レーザ(レーザダイオ
ード)LDをスイッチングするための差動回路を構成し
、それぞれのベースにはコンパレータICから位相の反
転したパルス電流が与えられる。コンパレータICは差
動入力を波形整形して出力するためのもので、その出力
端はそれぞれプルダウン抵抗R1,R2を介して負の電
源に接続されている。駆動トランジスタQ1゜Q2のエ
ミッタに共通接続されたトランジスタQ3は定電流源を
構成しており、抵抗R3を介して負の電源に接続されて
いる。また、半導体レーザLDのカソードには図示しな
いバイアス電流供給回路(トランジスタ、高周波電流の
流れ込みを阻止するコイル等で構成)が接続されている
The configuration of the conventional circuit will be explained with reference to FIG. 2. Two transistors Q1. Q2 constitutes a differential circuit for switching a semiconductor laser (laser diode) LD, and a pulse current with an inverted phase is applied to each base from a comparator IC. The comparator IC is for shaping the differential input into a waveform and outputting it, and its output terminals are connected to a negative power supply via pull-down resistors R1 and R2, respectively. A transistor Q3 commonly connected to the emitters of drive transistors Q1 and Q2 constitutes a constant current source, and is connected to a negative power supply via a resistor R3. Further, a bias current supply circuit (not shown) (consisting of a transistor, a coil for blocking the flow of high-frequency current, etc.) is connected to the cathode of the semiconductor laser LD.

次に、第2図に示す従来回路の動作を説明する。Next, the operation of the conventional circuit shown in FIG. 2 will be explained.

コンパレータICの非反転出力がH(ハイレベル)とな
ってこれがトランジスタQ1のベースに与えられると、
トランジスタQ1はオン状態になって半導体レーザLD
に流れる電流が増加し、発光状態になる。このとき、ト
ランジスタQ2のベースに与えられるコンパレータIC
の反転出力はL(ローレベル)になっているので、トラ
ンジスタQ2は高抵抗に保たれ電流は流れない。
When the non-inverted output of the comparator IC becomes H (high level) and is applied to the base of the transistor Q1,
Transistor Q1 turns on and the semiconductor laser LD
The current flowing through the light increases and the light becomes emissive. At this time, the comparator IC applied to the base of transistor Q2
Since the inverted output of Q2 is at L (low level), the transistor Q2 is kept at a high resistance and no current flows.

これに対して、コンパレータICの非反転出力がHから
しになり反転出力がLから1−1になると、トランジス
タQ1はオン状態からオフ状態になりトランジスタQ2
はオフ状態からオン状態になる。
On the other hand, when the non-inverted output of the comparator IC becomes H and the inverted output changes from L to 1-1, the transistor Q1 changes from the on state to the off state and the transistor Q2
changes from off state to on state.

従って、電流はトランジスタQ2を介して定電流トラン
ジスタQ3に流れるので、半導体レーザLDは消光する
Therefore, the current flows to the constant current transistor Q3 via the transistor Q2, so that the semiconductor laser LD is extinguished.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら上記の従来回路では、次のような問題点が
あった。すなわち、コンパレータICからの高周波パル
スによって高速変調をかけると、半導体レーザLDの緩
和振動(パルセーション)により生じる高周波成分が定
電流トランジスタQ3に流れ、このため定電流源トラン
ジスタQ3を流れる電流が不安定となっていた。その結
果、半導体レーザLDの光出力波形の立上り部分などに
過渡的な振動すなわちリンギングが生じ、波形に歪みが
現われていた。
However, the above conventional circuit has the following problems. In other words, when high-speed modulation is applied using a high-frequency pulse from the comparator IC, a high-frequency component generated by relaxation oscillation (pulsation) of the semiconductor laser LD flows into the constant current transistor Q3, and therefore the current flowing through the constant current source transistor Q3 becomes unstable. It became. As a result, transient vibrations, ie, ringing, occur at the rising edge of the optical output waveform of the semiconductor laser LD, and distortion appears in the waveform.

第3図はこれを説明するための波形図である。FIG. 3 is a waveform diagram for explaining this.

コンパレータICを介して第3図(a)に示すような駆
動パルスをトランジスタQ1のベースに印加すると、1
〜ランジスタQ1.Q2の共通エミッタにおいては第3
図(b)に示すように略一定の電流に高周波撮動が重畳
された波形が現れる。このため、半導体レーザLDの出
力波形の立ち上り部分ではリンギングによって、第3図
(C)に示すように大きな振動が発生する。
When a driving pulse as shown in FIG. 3(a) is applied to the base of the transistor Q1 via the comparator IC, 1
~Langister Q1. In the common emitter of Q2, the third
As shown in Figure (b), a waveform in which high-frequency imaging is superimposed on a substantially constant current appears. Therefore, in the rising portion of the output waveform of the semiconductor laser LD, ringing causes large vibrations as shown in FIG. 3(C).

このような問題点は、半導体レーザに限らず発光ダイオ
ード等の他の発光素子を駆動する際にも生じていた。ま
た、2個のトランジスタQl。
Such problems occur not only when driving semiconductor lasers but also when driving other light emitting elements such as light emitting diodes. Also, two transistors Ql.

Q2により差動回路を構成した駆動回路に限らず、1個
のトランジスタのみにより構成される駆動回路において
も生じていた。
This problem occurs not only in drive circuits in which a differential circuit is configured by Q2, but also in drive circuits in which only one transistor is configured.

そこで本発明は、半導体レーザ等の発光素子にパルス変
調をかけたときの緩和振動によるリンギングを抑制し、
これによって半導体レーザの出力パルスの歪みを除去す
ることのできる発光素子の駆動回路を提供することを目
的とする。
Therefore, the present invention suppresses ringing due to relaxation oscillation when pulse modulation is applied to a light emitting element such as a semiconductor laser, and
It is an object of the present invention to provide a driving circuit for a light emitting element that can eliminate distortion of output pulses of a semiconductor laser.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的を達成するため、本発明による発光素子の駆
動回路は、半導体スイッチング素子と、この半導体スイ
ッチング素子に直列接続された発光素子と、半導体スイ
ッチング素子および発光素子に直列接続された定電流源
とを備える発光素子の駆動回路において、定電流源と並
列にコンデンサを接続したことを特徴とするものである
In order to achieve the above object, a driving circuit for a light emitting element according to the present invention includes a semiconductor switching element, a light emitting element connected in series to the semiconductor switching element, and a constant current source connected in series to the semiconductor switching element and the light emitting element. A driving circuit for a light emitting element comprising: a constant current source and a capacitor connected in parallel with the constant current source.

〔作用〕[Effect]

本発明によれば、以上のように発光素子の駆動回路を構
成したので、コンデンサは高周波成分を通過させ(定電
流源をバイパスさせ)、従って高周波の撮動が定電流源
に加わるのを抑えて信号振幅電流を安定化させるように
働く。
According to the present invention, since the light emitting element drive circuit is configured as described above, the capacitor allows high frequency components to pass through (bypassing the constant current source), thus suppressing high frequency imaging from being applied to the constant current source. It works to stabilize the signal amplitude current.

〔実施例〕〔Example〕

以下、添付図面の第1図、第4図および第5図を参照し
て本発明の詳細な説明する。
The present invention will now be described in detail with reference to FIGS. 1, 4 and 5 of the accompanying drawings.

第1図は一実施例の回路構成を示す回路図でおる。そし
てこれが第2図の従来回路と異なる点は、差動回路を構
成するトランジスタQ1.Q2の共通エミッタと負の電
源の間に、高周波成分カット用のコンデンサCが接続さ
れていることである。
FIG. 1 is a circuit diagram showing the circuit configuration of one embodiment. The difference from the conventional circuit shown in FIG. 2 is that the transistor Q1. A capacitor C for cutting high frequency components is connected between the common emitter of Q2 and the negative power supply.

コンデンサCの容量は半導体レーザLDの緩和振動によ
り現れる高周波成分を通過させるのに適当な大きさであ
ればよく、具体的には回路を構成するトランジスタの特
性値、抵抗の値等に応じて定められる。
The capacitance of the capacitor C should be an appropriate size to pass the high frequency component that appears due to the relaxation vibration of the semiconductor laser LD, and specifically, it is determined according to the characteristic values of the transistors forming the circuit, the value of the resistance, etc. It will be done.

次に作用を説明する。第1図において、コンパレータI
Cより高周波パルスをトランジスタQ1゜Q2のベース
に印加し、半導体レーザに高速パルス変調をかける。こ
のようにすると、半導体レーザLDの緩和振動により高
周波成分が現れ、これが1〜ランジスタQ1を介して定
電流源トランジスタQ3に流れ込もうとする。ところが
、トランジスタQ1.Q2の共通エミッタと負の電源の
間にはコンデンサCが接続されているので、高周波成分
の多くはこのコンデンサCを通って負の電源に流れてし
まう。従って、定電流源トランジスタQ3を流れる信号
(膜幅電流が高周波成分によって不安定になることはな
く、結果としてリンギングによる半導体レーザLDの光
出力波形の歪みを防止できる。
Next, the action will be explained. In Figure 1, comparator I
A high-frequency pulse is applied from C to the bases of transistors Q1 and Q2, and high-speed pulse modulation is applied to the semiconductor laser. In this way, a high frequency component appears due to the relaxation oscillation of the semiconductor laser LD, and this tends to flow into the constant current source transistor Q3 via the transistor Q1. However, transistor Q1. Since a capacitor C is connected between the common emitter of Q2 and the negative power supply, most of the high frequency components flow through this capacitor C to the negative power supply. Therefore, the signal (width current) flowing through the constant current source transistor Q3 does not become unstable due to high frequency components, and as a result, distortion of the optical output waveform of the semiconductor laser LD due to ringing can be prevented.

ざらに本発明者は、上記実施例の有効性を確認するため
に、下記の実験を行なった。すなわち、第4図に示すよ
うに半導体レーザLDの放射光を光ファイバ1に結合さ
せ、伝送させたレーザ光を0/Eコンバータ2で電気信
号に変換、してオシロスコープ3で観測した。なお、半
導体レーザLDとしては1.2μmのIn Ga As
 Pレーザを用い、コンデンサCとしては220Fのも
のを用いた。
Briefly, the inventor conducted the following experiment in order to confirm the effectiveness of the above example. That is, as shown in FIG. 4, the emitted light from the semiconductor laser LD was coupled to the optical fiber 1, and the transmitted laser light was converted into an electrical signal by the O/E converter 2 and observed with the oscilloscope 3. Note that the semiconductor laser LD is made of 1.2 μm InGaAs.
A P laser was used, and a 220F capacitor C was used.

第5図は第4図に示す回路の各部の波形図である。すな
わち、第5図(a)に示すような駆動パルスをトランジ
スタQ1.Q2のベースに印加すると、トランジスタQ
1.Q2の共通エミッタに現れる電流波形は第5図(b
)に示すようになった。これにより、コンデンサCを除
いて同一の条件で実験した第3図の従来例の波形に比べ
て、高周波成分がかなり抑えられているのがわかる。第
5図(C)はオシロスコープ3で観測した半導体レーザ
LDの光出力波形である。第3図(C)の従来例と比べ
れば明らかなように、パルスの立上り部における振動が
十分に抑えられている。
FIG. 5 is a waveform diagram of each part of the circuit shown in FIG. 4. That is, a driving pulse as shown in FIG. 5(a) is applied to the transistor Q1. When applied to the base of Q2, transistor Q
1. The current waveform appearing at the common emitter of Q2 is shown in Figure 5 (b
). As a result, it can be seen that the high frequency components are considerably suppressed compared to the waveform of the conventional example shown in FIG. 3, which was tested under the same conditions except for capacitor C. FIG. 5(C) shows the optical output waveform of the semiconductor laser LD observed with the oscilloscope 3. As is clear from a comparison with the conventional example shown in FIG. 3(C), vibrations at the rising edge of the pulse are sufficiently suppressed.

本発明は上記の実施例に限定されるものではなく、種々
の変形が可能である。例えば、半導体レーザを駆動する
回路だけでなく、発光ダイオード等の他の発光素子を駆
動する回路にも適用することができる。また、実施例の
ような差動回路による電流切換スイッチ型の駆動回路だ
けでなく、差動回路によらないもの、エミッタフォロワ
型のものなどにも広く応用できる。但し、本発明の効果
は特に高速パルス変調するものに大きく現れるので、実
施例の如き電流切換スイッチ型のものに特に適している
ことは言うまでもない。
The present invention is not limited to the above embodiments, and various modifications are possible. For example, the invention can be applied not only to circuits that drive semiconductor lasers, but also to circuits that drive other light emitting elements such as light emitting diodes. Further, the present invention can be widely applied not only to a current changeover switch type drive circuit using a differential circuit as in the embodiment, but also to a drive circuit not using a differential circuit, an emitter follower type, and the like. However, since the effects of the present invention are particularly noticeable in high-speed pulse modulation, it goes without saying that it is particularly suitable for current changeover switch type devices such as the embodiment.

ざらに、トランジスタQ1,02等はバイポーラトラン
ジスタに限らず、MOSトランジスタ等であってもよく
、コンデンサをMOSキャパシタで構成してもよい。
In general, the transistors Q1, 02, etc. are not limited to bipolar transistors, but may be MOS transistors, etc., and the capacitors may be configured with MOS capacitors.

〔発明の効果〕〔Effect of the invention〕

以上の通り本発明によれば、半導体レーザ等の発光素子
に対して駆動電流を供給する定電流源にコンデンサを並
列接続するようにしたので、定電流源を構成するトラン
ジスタ等に高周波成分が流れて信号振幅電流が不安定に
なるのを防止することができ、従って発光素子の光出力
波形に現れるリンギングによる振動を抑制できる効果が
ある。
As described above, according to the present invention, since a capacitor is connected in parallel to a constant current source that supplies a driving current to a light emitting element such as a semiconductor laser, high frequency components flow into the transistors etc. that constitute the constant current source. This can prevent the signal amplitude current from becoming unstable, and therefore has the effect of suppressing vibrations due to ringing appearing in the optical output waveform of the light emitting element.

本発明は、高速パルス変調を行うとき′に特に有利なも
のでおる。
The invention is particularly advantageous when performing high speed pulse modulation.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係る半導体レーザの駆動回
路の回路図、第2図は従来の半導体レーザの駆動回路の
回路図、第3図は第2図に示す従来例の作用を説明する
信号波形図、第4図は第1図の駆動回路の特性の評価す
るために光ファイバ等を接続したときの回路図、第5図
は第4図の作用を説明する信号波形図である。 1・・・光ファイバ、LD・・・半導体レーザ、IC・
・・コンパレータ、C・・・コンデンサ。 特許出願人  住友電気工業株式会社 出願人代理人   長谷用  芳  樹第  1  図 第  2  図 第  3  図 第  4  図
Fig. 1 is a circuit diagram of a semiconductor laser drive circuit according to an embodiment of the present invention, Fig. 2 is a circuit diagram of a conventional semiconductor laser drive circuit, and Fig. 3 shows the operation of the conventional example shown in Fig. 2. Figure 4 is a signal waveform diagram to explain, and Figure 4 is a circuit diagram when an optical fiber etc. is connected to evaluate the characteristics of the drive circuit in Figure 1. Figure 5 is a signal waveform diagram to explain the operation of Figure 4. be. 1...Optical fiber, LD...semiconductor laser, IC/
... Comparator, C... Capacitor. Patent applicant Sumitomo Electric Industries, Ltd. Applicant's agent Yoshiki Hase Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 1、半導体スイッチング素子と、この半導体スイッチン
グ素子に直列接続された発光素子と、前記半導体スイッ
チング素子および発光素子に直列接続された定電流源と
を備える発光素子の駆動回路において、 前記定電流源と並列にコンデンサを接続したことを特徴
とする発光素子の駆動回路。 2、半導体スイッチング素子はトランジスタであり、コ
ンデンサはこのトランジスタのエミッタと負の電源の間
に接続されている特許請求の範囲第1項記載の発光素子
の駆動回路。
[Scope of Claims] 1. In a driving circuit for a light emitting element, comprising a semiconductor switching element, a light emitting element connected in series to the semiconductor switching element, and a constant current source connected in series to the semiconductor switching element and the light emitting element. , A driving circuit for a light emitting element, characterized in that a capacitor is connected in parallel with the constant current source. 2. The light emitting device driving circuit according to claim 1, wherein the semiconductor switching element is a transistor, and the capacitor is connected between the emitter of the transistor and a negative power source.
JP61160775A 1986-07-10 1986-07-10 Driving circuit for light-emitting element Pending JPS6317581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61160775A JPS6317581A (en) 1986-07-10 1986-07-10 Driving circuit for light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61160775A JPS6317581A (en) 1986-07-10 1986-07-10 Driving circuit for light-emitting element

Publications (1)

Publication Number Publication Date
JPS6317581A true JPS6317581A (en) 1988-01-25

Family

ID=15722185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61160775A Pending JPS6317581A (en) 1986-07-10 1986-07-10 Driving circuit for light-emitting element

Country Status (1)

Country Link
JP (1) JPS6317581A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2706225A1 (en) * 1993-06-07 1994-12-16 Mitsubishi Electric Corp Fibre-optic telecommunications device
JPH08186312A (en) * 1994-12-30 1996-07-16 Sony Corp Laser diode drive circuit
JP2005353786A (en) * 2004-06-10 2005-12-22 Nichia Chem Ind Ltd Semiconductor laser drive circuit
JP2018518670A (en) * 2015-05-20 2018-07-12 クアンタム−エスアイ インコーポレイテッドQuantum−Si Incorporated Light source for fluorescence lifetime analysis
CN109842016A (en) * 2019-03-06 2019-06-04 山西大学 A kind of semiconductor laser drive source with comprehensive protective device
US10605730B2 (en) 2015-05-20 2020-03-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
US10741990B2 (en) 2016-12-16 2020-08-11 Quantum-Si Incorporated Compact mode-locked laser module
US11249318B2 (en) 2016-12-16 2022-02-15 Quantum-Si Incorporated Compact beam shaping and steering assembly
US11466316B2 (en) 2015-05-20 2022-10-11 Quantum-Si Incorporated Pulsed laser and bioanalytic system
US11747561B2 (en) 2019-06-14 2023-09-05 Quantum-Si Incorporated Sliced grating coupler with increased beam alignment sensitivity
US11808700B2 (en) 2018-06-15 2023-11-07 Quantum-Si Incorporated Data acquisition control for advanced analytic instruments having pulsed optical sources

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2706225A1 (en) * 1993-06-07 1994-12-16 Mitsubishi Electric Corp Fibre-optic telecommunications device
US5519528A (en) * 1993-06-07 1996-05-21 Mitsubishi Denki Kabushiki Kaisha Method of optical fiber communication
JPH08186312A (en) * 1994-12-30 1996-07-16 Sony Corp Laser diode drive circuit
JP2005353786A (en) * 2004-06-10 2005-12-22 Nichia Chem Ind Ltd Semiconductor laser drive circuit
US11466316B2 (en) 2015-05-20 2022-10-11 Quantum-Si Incorporated Pulsed laser and bioanalytic system
US10605730B2 (en) 2015-05-20 2020-03-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
EP3298666B1 (en) * 2015-05-20 2021-12-29 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
JP2018518670A (en) * 2015-05-20 2018-07-12 クアンタム−エスアイ インコーポレイテッドQuantum−Si Incorporated Light source for fluorescence lifetime analysis
US11567006B2 (en) 2015-05-20 2023-01-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
US10741990B2 (en) 2016-12-16 2020-08-11 Quantum-Si Incorporated Compact mode-locked laser module
US11249318B2 (en) 2016-12-16 2022-02-15 Quantum-Si Incorporated Compact beam shaping and steering assembly
US11322906B2 (en) 2016-12-16 2022-05-03 Quantum-Si Incorporated Compact mode-locked laser module
US11848531B2 (en) 2016-12-16 2023-12-19 Quantum-Si Incorporated Compact mode-locked laser module
US11808700B2 (en) 2018-06-15 2023-11-07 Quantum-Si Incorporated Data acquisition control for advanced analytic instruments having pulsed optical sources
CN109842016A (en) * 2019-03-06 2019-06-04 山西大学 A kind of semiconductor laser drive source with comprehensive protective device
CN109842016B (en) * 2019-03-06 2020-08-04 山西大学 Semiconductor laser driving source with comprehensive protection device
US11747561B2 (en) 2019-06-14 2023-09-05 Quantum-Si Incorporated Sliced grating coupler with increased beam alignment sensitivity

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