CN109842016A - A kind of semiconductor laser drive source with comprehensive protective device - Google Patents
A kind of semiconductor laser drive source with comprehensive protective device Download PDFInfo
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- CN109842016A CN109842016A CN201910168846.9A CN201910168846A CN109842016A CN 109842016 A CN109842016 A CN 109842016A CN 201910168846 A CN201910168846 A CN 201910168846A CN 109842016 A CN109842016 A CN 109842016A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 230000001681 protective effect Effects 0.000 title claims abstract description 18
- 230000001105 regulatory effect Effects 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 description 8
- 230000001052 transient effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Abstract
The present invention relates to a kind of semiconductor laser drive power, specifically a kind of semiconductor laser drive power with comprehensive protective device.A kind of semiconductor laser drive source with comprehensive protective device; including protective device and constant-current source circuit; in protective device; the positive voltage VCC of D.C. regulated power supply passes through the anode of first resistor (11) connection first diode (1) and the non-inverting input terminal of comparator (3); the inverting input terminal of the minus earth of first diode (1), comparator (3) connects the end positive voltage VCC by adjustable potentiometer (2).The present invention can provide safe and reliable, continuously adjustable, strong antijamming capability constant drive current source for semiconductor laser.
Description
Technical field
The present invention relates to a kind of semiconductor laser drive power, specifically a kind of semiconductor with comprehensive protective device
Laser drive power.
Background technique
Semiconductor laser is directly injected into the mode of electric current and pumps its work due to can be used with small in size, power is high
Make voltage and current, and the advantages that continuous output wavelength is covered from infrared ray to visible light, semiconductor laser is logical in laser
Letter, laser printing, ranging and radar etc. have been widely used, and usage quantity shelter has first of laser.Together
Sample, semiconductor laser is due to expensive, and particularly with high power semiconductor lasers, operating process, which is not careful, to be damaged
It is bad, thus in operational use with design driven source when to pay special attention to, firstly, directly being contacted with hand or long-term stand does not have
The semiconductor laser of Antistatic protection device, it is easy to puncture it by electrostatic, lead to permanent damages, therefore drive electricity
It needs in the use of source with anti-static device；Secondly, the transient state wave that semiconductor laser is generated in switching on and shutting down vulnerable to power supply
It gushes and punctures, therefore needed in driving power use with the slow starter of electric current；Finally, semiconductor laser usually requires
It works in the environment of having temperature-controlling system, excessively high temperature will lead to the decline of its luminous efficiency and the fast prompt drop of tube life-span
It is low, particularly with large-power semiconductor laser, if the transient high-current that power supply is generated in "ON" or "Off", easily makes semiconductor
The temperature moment of laser is excessively high and temperature control overlong time even temperature control is not normal, causes to damage semiconductor laser, therefore every time
It must assure that current adjusting knob is adjusted to minimum before "ON" or the "Off" operation of power supply.
Summary of the invention
The purpose of the present invention is being directed to above-mentioned semiconductor laser easily damaged problem in use, a kind of band is provided
Have the semiconductor laser driving source device of comprehensive protective device, for semiconductor laser provide it is safe and reliable, continuously adjustable,
The constant drive current source of strong antijamming capability.
To achieve the above object, the present invention adopts the following technical scheme: a kind of semiconductor with comprehensive protective device swashs
Light device driving source, including protective device and constant-current source circuit, in protective device, the positive voltage VCC of D.C. regulated power supply passes through
First resistor (11) connects the anode of first diode (1) and the non-inverting input terminal of comparator (3), the yin of first diode (1)
The inverting input terminal of pole ground connection, comparator (3) connects the end positive voltage VCC by adjustable potentiometer (2)；The output of comparator (3)
End connects the source electrode s of big resistance (4) and P-channel field-effect transistor (PEFT) pipe (8) that resistance value is 10k Ω, P-channel by the second diode (9)
The source electrode s of field-effect tube (8) is grounded by second resistance (12), and the other end and capacitance of big resistance (4) are the big electricity of 100uF
Hold (5) to be connected with the grid g of N-channel field-effect tube (6), the source electrode s of N-channel field-effect tube (6) and the other end of bulky capacitor (5)
It is grounded, the grid g phase of the drain electrode d of N-channel field-effect tube (6) and the ground terminal of relay (7) and P-channel field-effect transistor (PEFT) pipe (8)
Even, the drain electrode d of P-channel field-effect transistor (PEFT) pipe (8) and the power end of relay (7) are connected to the end positive voltage VCC, relay (7) it is normal
Closed end is connected with the both ends of semiconductor laser LD, and the anode of semiconductor laser LD connects the end positive voltage VCC, semiconductor laser
The cathode of LD is connected with the common end of relay (7), and the another of relay (7) is connected to constant-current source circuit.
As a kind of preferred embodiment: in constant-current source circuit, the sliding end VR-2 and operational amplifier of adjustable potentiometer (2)
(13) non-inverting input terminal is connected, and the output end of operational amplifier (13) passes through 3rd resistor (14) connection power amplifier tube (15)
Base stage b, the normally open end of the collector c connection relay (7) of power amplifier tube (15), the emitter e of power amplifier tube (15)
It is connected to the inverting input terminal and sample resistance (16) of operational amplifier (13), the other end of sample resistance (16) connects ground.
Compared with existing the relevant technologies, the beneficial effects of the present invention are: the present invention can provide peace for semiconductor laser
Entirely, reliably, continuously adjustable, strong antijamming capability constant drive current source.It is filled by what big resistance (4) and bulky capacitor (5) formed
It is slow to collectively form electric current with the delay automatic switch function being made of N-channel field-effect tube (6) and relay (7) for discharge loop
Slow turn-on device, the electrical surge breakdown half that the positive voltage (VCC) of D.C. regulated power supply generates when switching on and shutting down can be effectively prevented
Conductor laser, simultaneously as the presence of relay (7), in the shutdown state, relay normal-closed end is connected so that semiconductor swashs
The PN junction short circuit of light device, can effectively antistatic breakdown.By adjustable potentiometer (2), first diode (1) and comparator (3) group
At comparison circuit, with the self-locking electricity being made of P-channel field-effect transistor (PEFT) pipe (8), the second diode (9) and N-channel field-effect tube (6)
Road collectively forms starup current and forces rezero operation, and booting can be effectively prevented, and transient current is excessive leads to semiconductor laser
Temperature is excessively high and damages.Experiment shows the present invention with the guarantor in the semiconductor laser driving source device of comprehensive protective device
Protection unit part can be implanted in any semiconductor laser driving source device, no matter semiconductor laser output power
It is small, it can be with effective protection semiconductor laser.
Detailed description of the invention
Fig. 1 is circuit theory schematic diagram of the invention；
Fig. 2 is the circuit diagram in the specific embodiment of the invention；
Wherein, 1, first diode, 2, adjustable potentiometer, 3, comparator, 4, big resistance, 5, bulky capacitor, 6, N-channel field-effect
Pipe, 7, relay, 8, P-channel field-effect transistor (PEFT) pipe, the 9, second diode, 10, semiconductor laser, 11, first resistor, 12, second
Resistance, 13, operational amplifier, 14,3rd resistor, 15, power amplifier tube, 16, sample resistance.
Specific embodiment
As depicted in figs. 1 and 2, the present embodiment is made of protective device and constant-current source circuit two parts
The positive voltage VCC of D.C. regulated power supply passes through the anode of first resistor R1 connection first diode D1 and comparator U1-B
Non-inverting input terminal, the minus earth of diode D1, the inverting input terminal of comparator U1-B are connected to the sliding of adjustable potentiometer VR
It holds on VR-2, adjustable potentiometer VR-3 passes through resistance R3 connection VCC, adjustable potentiometer VR-1 ground connection.Wherein, comparator is by double fortune
The a part for putting LM358 is constituted, and that first diode is selected is Schottky diode 1SS315, and Maximum Forward Voltage is reduced to
The sliding end VR-2 of 250mV, the adjustable potentiometer VR are used as the input end of analog signal of this driving source device to control simultaneously
Constant-current source circuit processed.
By circuit analysis it is found that comparator U1-B exports low level (about 0V) when input analog signal is higher than 250mV,
When inputting analog signal lower than 250mV, comparator U1-B exports high level (about VCC).
The output end of comparator U1-B passes sequentially through resistance R2, the second diode D3 is connected to the big electricity that resistance value is 10k Ω
The source electrode s of R5 and P-channel field-effect transistor (PEFT) pipe Q2 are hindered, while source electrode s is grounded by second resistance R9, the other end and electricity of big resistance R5
Capacitance be 100uF bulky capacitor C3 be connected with the grid g of N-channel field-effect tube Q1, the source electrode s of N-channel field-effect tube Q1 and greatly
The other end of capacitor C3 is grounded, and the d that drains is connected to the end VCC by resistance R7.The drain electrode d of N-channel field-effect tube Q1 and and relay
The ground terminal of device U2 is connected with the grid g of P-channel field-effect transistor (PEFT) pipe Q2, the electricity of the drain electrode d and relay U2 of P-channel field-effect transistor (PEFT) pipe Q2
Source is connected to the end VCC.The output end of comparator U1-B is controlled by the charging and discharging circuit that big resistance R5 and bulky capacitor C3 is formed
The on-off of the drain electrode d and source electrode s of N-channel field-effect tube Q1 processed, and then relay U2 and P-channel field-effect transistor (PEFT) pipe Q2 is controlled, wherein
Charging and discharging circuit and relay have a delay switch effect, and the relay normally closed terminal shortcircuit PN junction of semiconductor laser,
It can effectively antistatic breakdown.
By circuit analysis it is found that the i.e. grid g of N-channel field-effect tube Q1 is when 1. comparator U1-B exports low level
Low level, the drain electrode d and source electrode s of Q1 are disconnected, i.e. the voltage of the grid g) of the drain electrode d(Q2 of Q1 is high level, at this point, relay
U2 is still normal-closed end actuation, and the drain electrode d and source electrode s of P-channel field-effect transistor (PEFT) pipe Q2 is still disconnected, i.e. the grid of the source electrode s(Q1 of Q2
It g) is low level.2. comparator U1-B exports high level, i.e. the grid g of N-channel field-effect tube Q1 is high level, the drain electrode of Q1
D is connected with source electrode s, i.e. the voltage of the grid g) of the drain electrode d(Q2 of Q1 is low level, at this point, the normally open end of relay U2 is attracted,
The drain electrode d of Q2 is connected with source electrode s, i.e. the grid g) of the source electrode s(Q1 of Q2 is high level.Therefore by unilateral diode D3, N-channel field
Effect pipe Q1 and P-channel field-effect transistor (PEFT) pipe Q2 constitute latching circuit.
The normal-closed end of relay U2 successively with backward dioded D2, protection capacitor C7, semiconductor laser LD both ends phase
Even, the anode of the cathode of backward dioded D2 and semiconductor laser LD are connected to the end VCC simultaneously, the anode of backward dioded D2 and
The cathode of semiconductor laser LD is connected with the common end of relay U2, and the another of relay U2 is connected to constant-current source circuit.Institute
The backward dioded D2 and protection capacitor C7 stated has the function of reverse protection in circuit, and semiconductor laser LD is avoided surprisingly to connect
It is counter to damage.
The composition of the constant-current source circuit is: the sliding end (VR-2) of adjustable potentiometer VR is connected to electricity by resistance R4
Hold the non-inverting input terminal of C4 and operational amplifier U1-A, the other end ground connection of capacitor C4, the output end of operational amplifier U1-A according to
The secondary base stage b that power amplifier tube Q3 is connected to by the filter circuit and 3rd resistor R10 that are made of resistance R6 and capacitor C5, function
The normally open end of the collector c connection relay U2 of rate amplifier tube Q3, the emitter e of power amplifier tube Q3 are connected to operational amplifier
The other end of the inverting input terminal and sample resistance R8 of U1-A, sample resistance R8 connects ground.Wherein, operational amplifier U1-A is by double
Another part of amplifier LM358 is constituted,
Experiment shows:
1. that is, semiconductor laser is in close state when D.C. regulated power supply no power, the PN junction short circuit of semiconductor laser,
Semiconductor laser electrostatic breakdown can be effectively prevented.
2. D.C. regulated power supply is powered moment, if input end of analog signal voltage is higher than 250mV, that is, be switched on analog signal
Input terminal non-return-to-zero, relay power supply is abnormal, and normal-closed end is still in attracting state, two terminal shortcircuit of semiconductor laser LD without
Method adds and subtracts electric current, therefore, constitutes starup current and forces rezero operation, can be effectively prevented that booting transient current is excessive to lead to half
Conductor laser temperature is excessively high and damages.
3. if relay power supply is normal, and normally open end is in attracting state when input end of analog signal voltage is lower than 250mV,
I.e. the both ends semiconductor laser LD disconnect, and increase input end of analog signal voltage at this time, even if above 250mV, due to self-locking electricity
The presence on road, normally open end are still in attracting state, and semiconductor laser LD can normally add and subtract electric current.
In addition, the device also has the slow starter of electric current, semiconductor laser can be effectively prevented because of rising transient
Characteristic and punctured by positive surge；With reverse protection, can be damaged to avoid semiconductor laser LD is surprisingly reversed.This hair
A kind of bright semiconductor laser drive source with comprehensive protective device can be stablized, reliably, with being continuously adjusted swash for semiconductor
Light device provides constant current source.
Claims (2)
1. a kind of semiconductor laser drive source with comprehensive protective device, it is characterised in that: including protective device and constant current
Source circuit, in protective device, the positive voltage VCC of D.C. regulated power supply passes through first resistor (11) connection first diode (1)
Anode and comparator (3) non-inverting input terminal, the minus earth of first diode (1), the inverting input terminal of comparator (3) is logical
Cross adjustable potentiometer (2) connection end positive voltage VCC；The output end of comparator (3) connects resistance value by the second diode (9)
The big resistance (4) of 10k Ω and the source electrode s of P-channel field-effect transistor (PEFT) pipe (8), the source electrode s of P-channel field-effect transistor (PEFT) pipe (8) pass through second resistance
(12) it is grounded, the other end and capacitance of big resistance (4) are the bulky capacitor (5) of 100uF and the grid g of N-channel field-effect tube (6)
It is connected, the source electrode s of N-channel field-effect tube (6) and the other end of bulky capacitor (5) are grounded, the drain electrode d of N-channel field-effect tube (6)
Be connected with the grid g of the ground terminal of relay (7) and P-channel field-effect transistor (PEFT) pipe (8), the drain electrode d of P-channel field-effect transistor (PEFT) pipe (8) and after
The power end of electric appliance (7) is connected to the end positive voltage VCC, and the normal-closed end of relay (7) is connected with the both ends of semiconductor laser LD,
The anode of semiconductor laser LD connects the end positive voltage VCC, the common end phase of the cathode and relay (7) of semiconductor laser LD
Even, the another of relay (7) is connected to constant-current source circuit.
2. a kind of semiconductor laser drive source with comprehensive protective device according to claim 1, it is characterised in that:
In constant-current source circuit, the sliding end VR-2 of adjustable potentiometer (2) is connected with the non-inverting input terminal of operational amplifier (13), operation
The output end of amplifier (13) connects the base stage b of power amplifier tube (15) by 3rd resistor (14), power amplifier tube (15)
The normally open end of collector c connection relay (7), the emitter e of power amplifier tube (15) are connected to the anti-of operational amplifier (13)
The other end of phase input terminal and sample resistance (16), sample resistance (16) connects ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910168846.9A CN109842016B (en) | 2019-03-06 | 2019-03-06 | Semiconductor laser driving source with comprehensive protection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910168846.9A CN109842016B (en) | 2019-03-06 | 2019-03-06 | Semiconductor laser driving source with comprehensive protection device |
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| CN109842016A true CN109842016A (en) | 2019-06-04 |
| CN109842016B CN109842016B (en) | 2020-08-04 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110333493A (en) * | 2019-07-19 | 2019-10-15 | 舒毅 | A kind of weather radar transmitter failure detection system and method |
| WO2022185923A1 (en) * | 2021-03-05 | 2022-09-09 | パナソニックＩｐマネジメント株式会社 | Light emission device and distance measurement device |
| CN116660208A (en) * | 2023-05-30 | 2023-08-29 | 埃尔法(山东)仪器有限公司 | Laser gas detection circuit and gas detector |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110333493A (en) * | 2019-07-19 | 2019-10-15 | 舒毅 | A kind of weather radar transmitter failure detection system and method |
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| WO2022185923A1 (en) * | 2021-03-05 | 2022-09-09 | パナソニックＩｐマネジメント株式会社 | Light emission device and distance measurement device |
| CN116660208A (en) * | 2023-05-30 | 2023-08-29 | 埃尔法(山东)仪器有限公司 | Laser gas detection circuit and gas detector |
| CN116660208B (en) * | 2023-05-30 | 2024-01-09 | 埃尔法(山东)仪器有限公司 | Laser gas detection circuit and gas detector |
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