JPS63175483A - Production of optical semiconductor device - Google Patents

Production of optical semiconductor device

Info

Publication number
JPS63175483A
JPS63175483A JP62006899A JP689987A JPS63175483A JP S63175483 A JPS63175483 A JP S63175483A JP 62006899 A JP62006899 A JP 62006899A JP 689987 A JP689987 A JP 689987A JP S63175483 A JPS63175483 A JP S63175483A
Authority
JP
Japan
Prior art keywords
light
optical semiconductor
semiconductor device
optical
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62006899A
Other languages
Japanese (ja)
Other versions
JP2765832B2 (en
Inventor
Taichi Sugimoto
太一 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62006899A priority Critical patent/JP2765832B2/en
Priority to DE8787306304T priority patent/DE3782201T2/en
Priority to EP87306304A priority patent/EP0253664B1/en
Publication of JPS63175483A publication Critical patent/JPS63175483A/en
Priority to US08/472,110 priority patent/US5583076A/en
Priority to US09/013,031 priority patent/US5912504A/en
Application granted granted Critical
Publication of JP2765832B2 publication Critical patent/JP2765832B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To contrive to improve the production efficiency of an optical semiconductor element without exerting adverse effect on the light characteristics of the element by a method wherein, after an optical filter and a light-transmitting resin are directly adhered without using a bonding agent, both are subjected to molding processing as an integral matter. CONSTITUTION:A light-transmitting member 7 is arranged at a proper place of a molding die, an optical semiconductor device main part 4 is made to oppose to the member 7 and moreover, with a light-transmitting resin 6 injected in the molding die to adhere to the member 7, the main part 4 is sealed. That is, the member 7 and the resin 6 are directly bonded together without using a bonding agent. Accordingly, to be worried about a selection of the bonding agent is eliminated and to consider bubbles to generate in it is eliminated and moreover, there is no need to consider a positioning precision associated with the bonding agent as well. Thereby, adverse effect is never exerted on the light characteristics of an optical semiconductor element and the production efficiency of the element is improved.

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、光半導体装置の製造方法、特に光を電気信号
に変換する光半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of manufacturing an optical semiconductor device, and particularly to a method of manufacturing an optical semiconductor device that converts light into an electrical signal.

［従来技術］ この種の装置の製造方法の従来例を工程に添い説明する
と次のようになる。ここに第８図は従来工程により完成
されたこの種の光半導体装置の断面図、第９図は封止工
程の断面図である。[Prior Art] A conventional method for manufacturing this type of device will be explained step by step as follows. Here, FIG. 8 is a sectional view of this type of optical semiconductor device completed by a conventional process, and FIG. 9 is a sectional view of a sealing process.

（１）リードフレームの素子装着部１に、光を電気信号
に変換する光半導体素子４を装着材３を用いて固着する
。(1) An optical semiconductor element 4 that converts light into an electrical signal is fixed to the element mounting part 1 of a lead frame using a mounting material 3.

（２）リードフレームのリード部２と光半導体素子とを
金属細線５により、電気的、機械的に接続する。(2) The lead portion 2 of the lead frame and the optical semiconductor element are electrically and mechanically connected by the thin metal wire 5.

（３）（１）及び（２）により構成された光半導体装置
主要部を下型１２の適所に配置し、上型１１を閉じる。(3) Place the main part of the optical semiconductor device configured according to (1) and (2) in a suitable position on the lower mold 12, and close the upper mold 11.

（４）光透過性樹脂６をランナ９及びゲー）１０より上
型成形ギヤビティ１３及び下型成形キャビティ１４に注
入する。(4) The light-transmitting resin 6 is injected into the upper mold gearing 13 and the lower mold cavity 14 through the runner 9 and the gage 10.

（，５）上型１１及び下型１２を介して熱を供給し、光
透過性樹脂６により光半導体装置主要部を封止する。(,5) Heat is supplied through the upper mold 11 and the lower mold 12, and the main part of the optical semiconductor device is sealed with the light-transmitting resin 6.

（６）上型１１と下型１２を取りはずす。(6) Remove the upper mold 11 and lower mold 12.

（７）リードフレームリード部２の露出部をメッキする
。(7) Plating the exposed portion of the lead frame lead portion 2.

（８）リードフレームリード部２の不要部を切断除去す
る。(8) Cut and remove unnecessary parts of the lead frame lead portion 2.

（９）外部リードを曲げ成形する。(9) Bending and forming the external lead.

（１０）光半導体素子光路となる光透過性樹脂６面に接
着剤８を塗布し、光フイルタ−７を貼りっける。(10) Apply adhesive 8 to the surface of the light-transmitting resin 6 that will become the optical path of the optical semiconductor element, and affix the optical filter 7.

（１１）熱を供給し、接着剤８を硬化する。(11) Heat is supplied to cure the adhesive 8.

［発明が解決しようとする問題点１ 以上従来工程を説明したが、次のような問題点がある。[Problem to be solved by the invention 1 Although the conventional process has been described above, there are the following problems.

（１）光フイルタ−７の貼り付けに使用する接着材８は
、光半導体素子４の光学的要求を満足する事が必要であ
り、且つ、温度、湿度等に対する耐久性も要求され、選
定に関して、多くの試作が必要で、費用が嵩むものであ
る。(1) The adhesive 8 used for pasting the optical filter 7 must satisfy the optical requirements of the optical semiconductor element 4, and must also be durable against temperature, humidity, etc. , many prototypes are required and costs are high.

（２）光透過性樹脂面には、成形時に１ｔｆｆｉ剤が付
着したり、成形型の凹凸転写が原因となリキズ等が形成
され、これらは光透過性を阻害する一因であり、光半導
体素子光特性に悪影響を及ぼす、又これらを取り除く為
に洗浄、研磨等の工程が必要であり、製品のコストを上
げる原因となっている。(2) On the light-transmitting resin surface, scratches are formed due to adhesion of 1tffi agent during molding and the transfer of unevenness of the mold, and these are factors that impede the light transmittance of optical semiconductors. They have an adverse effect on the optical characteristics of the device, and cleaning, polishing, and other processes are required to remove them, which increases the cost of the product.

（３）光フィルタ７の張り付けにおいて、液状の接着材
を使用する為、垂直方向の位は精度を向上させることは
困難である。又、平行方向の位置精度を向上させること
も、機械的又は光学的な位置検出を必要とし、機械装置
にてこの作業を行なう時、高度な装置となり、高価な投
資が必要である。(3) Since a liquid adhesive is used to attach the optical filter 7, it is difficult to improve accuracy in the vertical direction. Furthermore, improving the positional accuracy in the parallel direction also requires mechanical or optical position detection, and when this work is performed using mechanical equipment, it requires sophisticated equipment and expensive investment.

（４）接着材中に気泡が発生すると、光透過性を阻害し
、光半導体素子の光特性に照影！を及ぼす。(4) When air bubbles occur in the adhesive, they impede the optical transparency and affect the optical characteristics of the optical semiconductor element! effect.

（５）第１θ図に示すように、光フイルタ−７がレンズ
１５のような場合には、光透過性樹脂６との接着面が平
面状ではなくなるので、光透過性樹脂６が鋭角部１６を
持つことがある。このような場合には、離型時に離型し
にくいばかりか１割れ等の不良発生の一因となり、製造
効率を低下させる。(5) As shown in FIG. 1θ, when the optical filter 7 is like the lens 15, the adhesive surface with the light-transmitting resin 6 is not flat, so the light-transmitting resin 6 is attached to the acute angle portion 16. may have. In such a case, it is not only difficult to release the product from the mold, but also causes defects such as cracks, reducing manufacturing efficiency.

本発明の目的は、光フィルタと光透過性樹脂とを接着材
を用いることなく直接に密着させた後に両者を一体とし
て成形加工することにより光半導体素子の光特性に悪影
響を及ぼすことのない、しかも製造効率の良好な光半導
体装置の製造方法を提供することにある。An object of the present invention is to directly bond an optical filter and a light-transmitting resin without using an adhesive, and then mold them as one body, so that the optical characteristics of the optical semiconductor element are not adversely affected. Moreover, it is an object of the present invention to provide a method for manufacturing an optical semiconductor device with good manufacturing efficiency.

［問題点を解決するための手段］ 上記目的を達成するための手段は、光を電気信号に変換
する光半導体素子に必要な電気接続を行った光半導体装
置主要部と、該主要部を封止する光透過性樹脂と、該光
半導体素子の光路上に位置する光透過性部材とを具備す
る光半導体装置の製造方法において、上記光透過性部材
を成形型の適所に配置し、次の該光透過性部材に対し上
記光半導体装置主要部を対向させ、更に上記光透過性樹
脂を該成形型内に注入して光透過性部材に密着させると
共に光半導体装置主要部を封止することを特徴とする光
半導体装置の製造方法である。[Means for Solving the Problems] The means for achieving the above object includes a main part of an optical semiconductor device having electrical connections necessary for an optical semiconductor element that converts light into an electrical signal, and a sealing of the main part. In a method for manufacturing an optical semiconductor device comprising a light-transmitting resin that stops the light-transmitting resin and a light-transmitting member located on the optical path of the optical semiconductor element, the light-transmitting member is placed at an appropriate position in a mold, and the following steps are performed. The main part of the optical semiconductor device is opposed to the light-transmissive member, and the light-transparent resin is injected into the mold to tightly contact the light-transparent member, and the main part of the optical semiconductor device is sealed. A method of manufacturing an optical semiconductor device is characterized in that:

［作用］ 上記のとおり、本発明によれば、光透過性部材と光透過
性樹脂を接着材を用いることなく直接に接着させている
。従って、接着材の選定に煩わされることなく、またそ
の中に発生する気泡を考慮することなく更に接着材に伴
う位置決めの精度といったことも考慮する必要がない。[Function] As described above, according to the present invention, the light-transmitting member and the light-transmitting resin are directly bonded to each other without using an adhesive. Therefore, there is no need to worry about selecting an adhesive, there is no need to consider air bubbles generated therein, and there is no need to consider positioning accuracy associated with the adhesive.

また、本発明によれば光透過性部材と光透過性樹脂とを
一体として成形加工する。従って、光透過性部材と対面
している光透過性樹脂面が成形されることはないため成
形時の離型剤が付着したり鋭角部が形成されることによ
り離型が困難なことはなくなった。Further, according to the present invention, the light-transmitting member and the light-transmitting resin are integrally molded. Therefore, since the light-transmitting resin surface facing the light-transmitting member is not molded, it is no longer difficult to release the mold due to adhesion of the mold release agent during molding or the formation of sharp corners. Ta.

このため、従来よりも光半導体装置の光特性に悪影響を
及ぼすことはなくなりかつ製造効率が向上するようにな
った。Therefore, the optical characteristics of the optical semiconductor device are not adversely affected and the manufacturing efficiency is improved compared to the conventional method.

［実施例］ 以下、本発明を、実施例により添付図面を参照して説明
する。[Examples] Hereinafter, the present invention will be explained by way of examples with reference to the accompanying drawings.

第１図は本発明により製造された装置の断面図、第２図
から第７図まではそれぞれ本発明の第１実施例から第５
実施例による封止工程を示す断面図である。FIG. 1 is a cross-sectional view of a device manufactured according to the present invention, and FIGS.
It is a sectional view showing a sealing process according to an example.

なお、第１図から第７図において、第１図から第３図ま
でと同一の構ＩｔＦ４部分には、同一の参照符号を付し
ている。In addition, in FIGS. 1 to 7, the same reference numerals are given to the same structure ItF4 portion as in FIGS. 1 to 3.

即ち、１は光半導体素子４を接着するリードフレームの
素子装着部、２は光透過性樹脂１３から成る封止部と外
部とを電気的に接続するリードフレームのリード部、３
はリードフレーム素子装置部１に光半導体素子４を接着
する接着材。That is, 1 is an element attachment part of a lead frame to which the optical semiconductor element 4 is adhered, 2 is a lead part of the lead frame which electrically connects the sealing part made of light-transmitting resin 13 to the outside, and 3
is an adhesive for bonding the optical semiconductor element 4 to the lead frame element device section 1;

４は、光を電気信号に変換する光半導体素子、５は、光
半導体素子４とリードフレームリード部２とを電気的に
接続する金属細線、６は、リードフレーム素子装着部１
と、リードフレームリード部２と接着材３と、光半導体
素子４と金属細線５から成る光半導体装置主要部を封止
する光透過性樹脂、７は、特定波長光をカットする光フ
ィルタ、９は、光透過性樹脂６を注入するキャビティ１
３．１４の近傍に至る通路であるランチ、１０は光透過
性樹脂６を注入するキャビティ１３゜１４に至る通路で
あるゲート、１１は、光透過性樹脂を成形する上型、１
２は、光透過性樹脂を成形する下型、１３は、上型キャ
ビティ、１４は下型キャビティ、１７は、キャビティに
形成された凹部、１８はシリコーングリース、１９は光
フィルタ７を保持する凸部である。4 is an optical semiconductor element that converts light into an electrical signal; 5 is a thin metal wire that electrically connects the optical semiconductor element 4 and the lead frame lead portion 2; and 6 is a lead frame element mounting portion 1.
, a light-transmitting resin for sealing the main parts of the optical semiconductor device consisting of the lead frame lead portion 2, the adhesive 3, the optical semiconductor element 4, and the thin metal wire 5; 7, an optical filter that cuts light of a specific wavelength; 9; is a cavity 1 into which a light-transmitting resin 6 is injected.
3. A launch which is a passage leading to the vicinity of 14; 10 is a gate which is a passage leading to a cavity 13 and 14 into which the light-transmitting resin 6 is injected; 11 is an upper mold for molding the light-transmitting resin;
2 is a lower mold for molding a light-transmitting resin; 13 is an upper mold cavity; 14 is a lower mold cavity; 17 is a recess formed in the cavity; 18 is silicone grease; and 19 is a convex portion for holding the optical filter 7. Department.

以下、第２図に基づいて、本発明の第１実施例を説明す
る。A first embodiment of the present invention will be described below based on FIG.

（１）先ず、リードフレーム素子装着部ｌの下面に、光
を電気信号に変換する光半導体素子４を、接着材３によ
り固着する。(1) First, the optical semiconductor element 4, which converts light into an electrical signal, is fixed to the lower surface of the lead frame element mounting portion l using the adhesive 3.

（２）次に、リードフレームリード部２と光半導体素子
４の間を金属細線５により、電気的、機械的に接続する
。この（１）と（２）により光半導体装置主要部が形成
される。(2) Next, the lead frame lead part 2 and the optical semiconductor element 4 are electrically and mechanically connected using the thin metal wire 5. The main part of the optical semiconductor device is formed by these (1) and (2).

（３）光フィルタ７を、下型１２のキャビティ１４に形
成した凹所１７に挿入する。(3) Insert the optical filter 7 into the recess 17 formed in the cavity 14 of the lower mold 12.

（４）（１）及び（２）によりＩＩＩｊ虞された光半導
体装置主要部を下型１２の内の上記光フィルタ７に対向
する位置に配置し、上型１１を閉じる。(4) The main part of the optical semiconductor device that has been treated as IIIj in (1) and (2) is placed in the lower mold 12 at a position facing the optical filter 7, and the upper mold 11 is closed.

（５）光透過性樹脂６を、ランナ９及びゲート１０から
、上型成形キャビティ１３及び下型成形キャビティ１４
に注入する。(5) Transfer the light-transmitting resin 6 from the runner 9 and gate 10 to the upper mold cavity 13 and the lower mold cavity 14.
Inject into.

（６）上型１１及び下型１２に熱を供給し、上記注入し
た光透過性樹脂６により光半導体装置主要部を封止する
。(6) Heat is supplied to the upper mold 11 and the lower mold 12, and the main part of the optical semiconductor device is sealed with the injected optically transparent resin 6.

（７）上型１１と下型１２を取りはずす。(7) Remove the upper mold 11 and lower mold 12.

（８）リードフレームリード部２の露出部をメッキする
。(8) Plating the exposed portion of the lead frame lead portion 2.

（９）リードフレームリード部２の不要部を切断除去す
る。(9) Cut and remove unnecessary parts of the lead frame lead portion 2.

（１０）外部リードを曲げ成形する。(10) Bending and forming the external lead.

以上の工程により第１図に示す光半導体装置が完成され
る。Through the above steps, the optical semiconductor device shown in FIG. 1 is completed.

上記のとおり、本発明の第１実施例によれば、従来のよ
うに接着材を用いることなく、又従来と異なり光透過性
樹脂と光フィルタが対になって成形される。従って、次
のような効果がある。As described above, according to the first embodiment of the present invention, the light-transmitting resin and the optical filter are molded as a pair, without using an adhesive unlike the conventional method, and unlike the conventional method. Therefore, there are the following effects.

（１）接着材の材料コスト及び選定等の開発コスト及び
工程での工数の削減となる。(1) It reduces the material cost of adhesive material, the development cost such as selection, and the number of man-hours in the process.

（２）キャビティ１４内に注入された光透過性樹ＩＩ！
６は既に配置されている光フィルタ７の上に積層される
。従って、光路となる光透過性樹脂面は光フィルタ７と
密着しているので成形型に１．より成形をされる事がな
い、このため、成形時に付着した離型剤や、凹凸転写に
よるキズ等が光透過性を阻害する事がない。(2) Light-transmitting tree II injected into cavity 14!
6 is laminated on the optical filter 7 that has already been placed. Therefore, since the light-transmitting resin surface that becomes the optical path is in close contact with the optical filter 7, the molding die 1. Therefore, mold release agent attached during molding and scratches due to unevenness transfer do not impede light transmittance.

（３）光フィルタ７は、下型１２に配置する為、特別な
位置検出装置を使用することなく、位置決め精度が向上
する。また型の形状により、高さ、縦、横方向の位置を
任意に決めることができるという附随的効果もある。(3) Since the optical filter 7 is placed on the lower mold 12, positioning accuracy is improved without using a special position detection device. There is also the additional effect that the height, vertical and horizontal positions can be arbitrarily determined depending on the shape of the mold.

（４）光路に接着材層を有しない為、接着材中の気泡の
発生による光透過性の阻害も発生する事がない。(4) Since there is no adhesive layer in the optical path, there is no inhibition of light transmittance due to the generation of bubbles in the adhesive.

（５）レンズ等の光透過性部材を用いるために、光透過
性樹脂に鋭角部が形成されたとしても、光透過性樹脂と
レンズを対で、鋭角にて離型するので、離型時割れ等を
回避できる。(5) Because a light-transmitting member such as a lens is used, even if an acute angle part is formed in the light-transmitting resin, the light-transmitting resin and lens are released as a pair at an acute angle, so when releasing the mold, Cracks etc. can be avoided.

第３図は、本発明の第２実施例を示す断面図である。FIG. 3 is a sectional view showing a second embodiment of the invention.

本実施例によれば、光フィルタ７が、光透過性樹脂光路
面より小さい時でも、下型１２に凹部１７が形成されて
いるので、光フィルタ７は凹部１７により位置が限定さ
れる為、完成品での光フィルタ７の位置は、極めて高精
度なものとなるという効果がある。According to this embodiment, even when the optical filter 7 is smaller than the optical path surface of the light-transmitting resin, since the recess 17 is formed in the lower mold 12, the position of the optical filter 7 is limited by the recess 17. This has the effect that the position of the optical filter 7 in the finished product is extremely accurate.

第４図は、本発明の第３実施例を示す断面図である０本
実施例によれば、凹部１７の底部にシリコングリース１
８を塗付し、その上に光フィルタ７を載置せしめている
ので、下型１２と光フイルタ７間に樹脂が浸入しないと
いう効果がある。FIG. 4 is a sectional view showing a third embodiment of the present invention. According to this embodiment, silicone grease 1 is applied to the bottom of the recess 17.
8 and the optical filter 7 is placed thereon, there is an effect that the resin does not enter between the lower mold 12 and the optical filter 7.

即ち、本発明における封止方法としては、一般にキャス
ティングモールド、トランスファモールド、インジェク
ションモールド等、様々な方法がある。しかし、製造条
件によっては、光フィルタ７と下型１２の凹所１７の間
に樹脂が浸入することがある。この時浸入した樹脂は、
光フイルタ７上に薄状に付着し、乱反射により、光透過
性の阻害となる。このような問題を防ぐ為に、第４図に
示す第３実施例は特に効果がある。That is, as a sealing method in the present invention, there are generally various methods such as casting mold, transfer mold, and injection mold. However, depending on manufacturing conditions, resin may enter between the optical filter 7 and the recess 17 of the lower mold 12. The resin that entered at this time was
It adheres to the optical filter 7 in a thin form and causes diffused reflection, which impedes light transmission. In order to prevent such problems, the third embodiment shown in FIG. 4 is particularly effective.

第５図は、本発明の第４実施例を示す断面図である。FIG. 5 is a sectional view showing a fourth embodiment of the present invention.

本実施例によれば、下型１２の底部に凸部１９を設けた
ので、光フィルタ７をこの凸部１９で保持することがで
き、シリコングリース１８を用いても光フィルタ７の垂
直方向の位置が確定するという効果がある。According to this embodiment, since the convex part 19 is provided at the bottom of the lower mold 12, the optical filter 7 can be held by this convex part 19, and even if silicone grease 18 is used, the optical filter 7 can be held in the vertical direction. This has the effect of determining the position.

更に、この第４実施例によれば、光フィルタ７は、シリ
コングリース１８により粘着される為、光フィルタ７を
上型１１に装着するような構成としても、光フィルタ７
が落下しないという効果がある。Further, according to the fourth embodiment, since the optical filter 7 is adhered with the silicone grease 18, even if the optical filter 7 is attached to the upper mold 11, the optical filter 7
This has the effect of preventing it from falling.

上記第３と第４の実施例において、シリコングリースを
用いたが、粘性部材であれば良く、例えば、カルナウバ
ロウ等のロウ、シリコンオイル等のオイル、シリコング
リース以外のグリースであっても良い。Although silicone grease was used in the third and fourth embodiments, any viscous material may be used, such as wax such as carnauba wax, oil such as silicone oil, or grease other than silicone grease.

第６図及び第７図に第５実施例を示す、本例では、第１
実施例（３）で示す光フィルタ７の片面（下型１２側の
面）に粘着テープ３０を付着せしめである。すなわち、
光フィルターと下型１２との界面に粘着テープ３０を介
在せしめる。A fifth embodiment is shown in FIGS. 6 and 7. In this example, the first
An adhesive tape 30 is attached to one surface (the surface on the lower mold 12 side) of the optical filter 7 shown in Example (3). That is,
An adhesive tape 30 is interposed at the interface between the optical filter and the lower mold 12.

この粘着テープ３０は第１実施例の第（７）工程の後に
光フイルタ−７から引き剥す、他の工程は第１実施例と
同様である。This adhesive tape 30 is peeled off from the optical filter 7 after step (7) of the first embodiment, and the other steps are the same as those of the first embodiment.

かかる粘着テープ３０を付着せしめておくと、光フイル
タ−７と下型１２どの界面にたとえ樹脂が侵入し、パリ
の発生をきたしたとしても、このパリは、光フイルタ−
７から粘着テープ３０を剥す際に粘着テープ３０ととも
に除去されてしまう。By attaching such an adhesive tape 30, even if resin infiltrates the interface between the optical filter 7 and the lower die 12 and causes paris, this paris will be removed from the optical filter.
When the adhesive tape 30 is peeled off from 7, it is removed together with the adhesive tape 30.

なお、粘着テープは耐熱性（樹脂注入時あるいは加熱時
には約１５０℃の熱にさらされるのでこの温度に耐えら
れる程度の耐熱性）を有していればよく、かかる耐熱性
を有していれば特に限定されない、粘着テープの粘着剤
としては例えば、エポキシ樹脂その他エポキシフェノー
ル系樹脂（連続でも１８０℃程度までの耐熱性を有する
）、塩化ビニール樹脂あるいは、ポリイミド、ポリアミ
ドイミドイ等を適宜使用すればよい。The adhesive tape only needs to have heat resistance (it is exposed to heat of about 150°C during resin injection or heating, so it has enough heat resistance to withstand this temperature). The adhesive for the adhesive tape is not particularly limited, and for example, epoxy resin, epoxy phenol resin (having heat resistance up to about 180°C even when continuous), vinyl chloride resin, polyimide, polyamideimide, etc. may be used as appropriate. good.

また、一般的に、本発明においては、光半導体素子の材
質、受光面の分割、回路等は、光半導体装置の用途、目
的に応じ様々なものが使用されるものである０例えば、
撮像用の面分割された、シリコン光半導体素子等である
。又、実施例において、光透過性樹脂上の光透過性部材
として、光フィルタ及びレンズについて記載したが、光
半導体袋はの用途、目的に応じ、偏光板、凹レンズ等で
あってもよい。In general, in the present invention, various materials such as the material of the optical semiconductor element, the division of the light receiving surface, the circuit, etc. are used depending on the use and purpose of the optical semiconductor device.
It is a silicon optical semiconductor device etc. that is divided into planes for imaging. Further, in the embodiments, an optical filter and a lens are described as the light-transmitting member on the light-transmitting resin, but the optical semiconductor bag may be a polarizing plate, a concave lens, etc. depending on the use and purpose of the optical semiconductor bag.

本発明において、光透過性樹脂は、光半導体装置の用途
、目的に応じ、選択されるものであり、光透過性、接着
性の他、耐熱性、耐水性等の信頼性が要求される。In the present invention, the light transmitting resin is selected depending on the use and purpose of the optical semiconductor device, and is required to have reliability such as heat resistance and water resistance in addition to light transmittance and adhesiveness.

例えば、半導体装置の使用波長が約３００ルｍ〜１１０
００ＩＬの可視光域であり、光フィルタ７の素材がガラ
スである時、上記光透過性、接着性、信頼性から、樹脂
は、ビスフェノールＡタイプエポキシ樹脂の酸無水物硬
化のものがよい。For example, the wavelength used by semiconductor devices is approximately 300 lm to 110 lm.
00IL, and when the material of the optical filter 7 is glass, the resin is preferably an acid anhydride-cured bisphenol A type epoxy resin from the above-mentioned light transmittance, adhesiveness, and reliability.

［発明の効果］ （１）上記の通り、本発明によれば接着材を用いていな
いので、接着材の材料コスト及び選定等の開発コスト及
び工程での工数の削減となる・（２）キャビティ１４内
に注入された光透過性樹脂６は既に配置されている光フ
ィルタ７の上に積層される。従って、光路となる光透過
性樹脂面は光フィルタ７と密着しているので、成形時に
より成形される事がない、このため、成形時に付着した
離型剤や、凹凸転写によるキズ等が光透過性を阻害する
事がない。[Effects of the invention] (1) As described above, since no adhesive is used according to the present invention, the cost of adhesive materials, development costs such as selection, and man-hours in the process are reduced. (2) Cavity The light-transmitting resin 6 injected into the inside 14 is laminated on the optical filter 7 that has already been placed. Therefore, since the light-transmitting resin surface that serves as the optical path is in close contact with the optical filter 7, it will not be molded during molding. Therefore, the mold release agent that adhered during molding and scratches due to uneven transfer will be removed from the light. It does not impede permeability.

（３）光透過性部材７は、下型１２に配置する為、特別
な位置検出装置を使用することなく、位置決め精度が向
上する。また盟の形状により、高さ、縦、横方向の位置
を任意に決めることができるどういう附随的効果もある
。(3) Since the light-transmitting member 7 is placed on the lower mold 12, positioning accuracy is improved without using a special position detection device. Additionally, depending on the shape of the fence, the height, vertical and horizontal positions can be arbitrarily determined.

（４）光路に接着材層を有しない為、接着材中の気泡の
発生による光透過性の阻害も発生する事がない。(4) Since there is no adhesive layer in the optical path, there is no inhibition of light transmittance due to the generation of bubbles in the adhesive.

（５）レンズ等の光透過性部材を用いるために、光透過
性樹脂に鋭角部が形成されたとしても、光透過性樹脂と
レンズを対で、鋭角にて離型するので、１ｌｌｌ型時割
れ等を回避できる。(5) Because a light-transmitting member such as a lens is used, even if an acute angle part is formed in the light-transmitting resin, the light-transmitting resin and lens are released as a pair at an acute angle, so when using a 1llll mold Cracks etc. can be avoided.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明により製造された光半導体装置の断面図
、第２図は本発明の第１実施例を示す断面図、第３図は
本発明の第２実施例を示す断面図、第４図は本発明の第
３実施例を示す断面図、第５図は本発明の第４実施例を
示す断面図、第６図及び第７図は本発明の第５実施例を
示す断面図、第８図は従来の光半導体装置の断面図、第
９図は従来の封圧工程を示す断面図、第１Ｏ図は従来の
光半導体装置の断面図。 １拳・リードフレーム素子装着部分、２・０リ一ドフレ
ームリード部、３＠−装着材、４Φ・光半導体素子、５
・・金属細線、６・・光透過性樹脂、７・・光フィルタ
、８・−接着材、９・拳ランナ、１０・・ゲート、１１
−・上型、１２拳・下型、１３・９上型キャビティ、１
４・・下型キャビティ、１５・・レンズ、１６・・鋭角
部、１７１Ｉ・凹部、１８・−シリコーングリース、１
９争壷凸部、３０−・粘着テープ。 第２図 第３図 第４図 第５図 第６図 第７図 第８図FIG. 1 is a sectional view of an optical semiconductor device manufactured according to the present invention, FIG. 2 is a sectional view showing a first embodiment of the present invention, and FIG. 3 is a sectional view showing a second embodiment of the present invention. FIG. 4 is a sectional view showing a third embodiment of the present invention, FIG. 5 is a sectional view showing a fourth embodiment of the invention, and FIGS. 6 and 7 are sectional views showing a fifth embodiment of the invention. , FIG. 8 is a cross-sectional view of a conventional optical semiconductor device, FIG. 9 is a cross-sectional view showing a conventional sealing process, and FIG. 1O is a cross-sectional view of a conventional optical semiconductor device. 1. Lead frame element attachment part, 2.0 Lead frame lead part, 3@- attachment material, 4Φ.Optical semiconductor element, 5
・・Metal thin wire, 6.・Light-transparent resin, 7.・Optical filter, 8・-Adhesive material, 9・Fist runner, 10・・Gate, 11
-・Upper mold, 12 fist・Lower mold, 13.9 Upper mold cavity, 1
4. Lower mold cavity, 15. Lens, 16. Acute angle part, 171I, concave part, 18. - Silicone grease, 1
9 Convex part of the war pot, 30- Adhesive tape. Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8

Claims (1)

【特許請求の範囲】 １、光を電気信号に変換する光半導体素子に必要な電気
接続を行った光半導体装置主要部と、該主要部を封止す
る光透過性樹脂と、該光半導体素子の光路上に位置する
光透過性部材とを具備する光半導体装置の製造方法にお
いて、上記光透過性部材を成形型の適所に配置し、次に
該光透過性部材に対し上記光半導体装置主要部を対向さ
せ、更に上記光透過性樹脂を該成形型内に注入して光透
過性部材に密着させると共に光半導体装置主要部を封止
することを特徴とする光半導体装置の製造方法。 ２、上記光透過性部材を成形型内のキャビティ底部に形
成された凹部に挿入するようにした上記特許請求の範囲
第１項記載の光半導体装置の製造方法。 ３、上記光透過性部材を上記凹部内に粘着物質を介して
接着させるようにした上記特許請求の範囲第１項記載の
光半導体装置の製造方法。 ４、上記粘着性物質がカルナウバロウ等のロウ又は、シ
リコーオイル等のオイル、シリコーングリース等のグリ
ース等であることを特徴とする特許請求の範囲第３項記
載の光半導体装置の製造方法。[Scope of Claims] 1. A main part of an optical semiconductor device that has electrical connections necessary for an optical semiconductor element that converts light into an electrical signal, a light-transmitting resin that seals the main part, and the optical semiconductor element. In the method for manufacturing an optical semiconductor device, the optical semiconductor device is provided with a light transmitting member located on the optical path of the optical semiconductor device. A method of manufacturing an optical semiconductor device, comprising: arranging the parts to face each other, and further injecting the above-mentioned light-transmitting resin into the mold to bring it into close contact with the light-transmitting member, and sealing the main part of the optical semiconductor device. 2. The method for manufacturing an optical semiconductor device according to claim 1, wherein the light-transmitting member is inserted into a recess formed at the bottom of a cavity in a mold. 3. The method for manufacturing an optical semiconductor device according to claim 1, wherein the light-transmitting member is adhered within the recess through an adhesive substance. 4. The method for manufacturing an optical semiconductor device according to claim 3, wherein the adhesive substance is wax such as carnauba wax, oil such as silicone oil, grease such as silicone grease, or the like.
JP62006899A 1986-07-16 1987-01-14 Method for manufacturing optical semiconductor device Expired - Fee Related JP2765832B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62006899A JP2765832B2 (en) 1987-01-14 1987-01-14 Method for manufacturing optical semiconductor device
DE8787306304T DE3782201T2 (en) 1986-07-16 1987-07-16 SEMICONDUCTOR PHOTOSENSOR AND METHOD FOR THE PRODUCTION THEREOF.
EP87306304A EP0253664B1 (en) 1986-07-16 1987-07-16 Semiconductor photo-sensor and method for manufacturing the same
US08/472,110 US5583076A (en) 1986-07-16 1995-06-07 Method for manufacturing a semiconductor photo-sensor
US09/013,031 US5912504A (en) 1986-07-16 1998-01-26 Semiconductor photo-sensor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62006899A JP2765832B2 (en) 1987-01-14 1987-01-14 Method for manufacturing optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS63175483A true JPS63175483A (en) 1988-07-19
JP2765832B2 JP2765832B2 (en) 1998-06-18

Family

ID=11651071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62006899A Expired - Fee Related JP2765832B2 (en) 1986-07-16 1987-01-14 Method for manufacturing optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2765832B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0893861A3 (en) * 1997-07-25 2000-01-12 Oki Electric Industry Co., Ltd. Optical module
WO2003098702A1 (en) * 2002-05-15 2003-11-27 Matsushita Electric Industrial Co., Ltd. Optical detector, optical head device, optical information processing device, and optical information processing method
JP2008078455A (en) * 2006-09-22 2008-04-03 Denso Corp Car-mounted color sensor, and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611061A (en) * 1985-05-13 1986-01-07 Nec Corp Manufacture of photodetector containing filter
JPS61170074A (en) * 1985-01-24 1986-07-31 Canon Inc Optical semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61170074A (en) * 1985-01-24 1986-07-31 Canon Inc Optical semiconductor device
JPS611061A (en) * 1985-05-13 1986-01-07 Nec Corp Manufacture of photodetector containing filter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0893861A3 (en) * 1997-07-25 2000-01-12 Oki Electric Industry Co., Ltd. Optical module
WO2003098702A1 (en) * 2002-05-15 2003-11-27 Matsushita Electric Industrial Co., Ltd. Optical detector, optical head device, optical information processing device, and optical information processing method
JP2008078455A (en) * 2006-09-22 2008-04-03 Denso Corp Car-mounted color sensor, and its manufacturing method

Also Published As

Publication number Publication date
JP2765832B2 (en) 1998-06-18

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