JPS63172432A - Method of deburring resin molded product - Google Patents
Method of deburring resin molded productInfo
- Publication number
- JPS63172432A JPS63172432A JP361687A JP361687A JPS63172432A JP S63172432 A JPS63172432 A JP S63172432A JP 361687 A JP361687 A JP 361687A JP 361687 A JP361687 A JP 361687A JP S63172432 A JPS63172432 A JP S63172432A
- Authority
- JP
- Japan
- Prior art keywords
- molded product
- resin molded
- ultrasonic wave
- aqueous solution
- electrolysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 27
- 229920005989 resin Polymers 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 28
- 239000007864 aqueous solution Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 239000000243 solution Substances 0.000 abstract description 12
- 238000005868 electrolysis reaction Methods 0.000 abstract description 11
- 238000005406 washing Methods 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 11
- 238000004506 ultrasonic cleaning Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分腎〕
この発明は、m*封止時に封止部分以外の金属部に流出
して付着した樹脂薄ばりの除去を行う樹脂成型品のばり
取り方法に関するものである。[Detailed Description of the Invention] [Industrial Application] This invention is a method for removing burrs from resin molded products, which removes thin resin burrs that flow out and adhere to metal parts other than the sealed part during m* sealing. It is about the method.
従来、樹脂成型品としての樹脂封止型の半導体装置の組
立工程は、樹脂封止後に発生するダムばりの打抜き工程
および薄ばりの除去工程(以後ぼり取り工程と呼ぶ)が
含まれる。Conventionally, the assembly process of a resin-sealed semiconductor device as a resin-molded product includes a process of punching out dam burrs and a process of removing thin burrs (hereinafter referred to as a deburring process) that occur after resin encapsulation.
第3図はダムばりの打抜き工程後の半導体装置の状態を
示す図であり、この図において、1はパッケージ樹脂部
、2は外部リード、3はタイバ〜、4は薄ぼりである。FIG. 3 is a diagram showing the state of the semiconductor device after the dam burr punching process. In this diagram, 1 is a package resin part, 2 is an external lead, 3 is a tie bar, and 4 is a thin strip.
一般にぼり取り工程は、薄ばり4を機械的に除去する超
音波洗浄や高圧水流による洗浄と、その前処理であるN
aOH溶液の電気分解を利用した薄ばり4をフレーム母
材より剥離する工程とで構成されている。Generally, the deburring process includes ultrasonic cleaning to mechanically remove thin burrs 4 or cleaning with high-pressure water jets, and pretreatment with N.
It consists of a step of peeling off the thin burrs 4 from the frame base material using electrolysis of an aOH solution.
次にぼり取り工程の原理について第4図を参照して説明
する。Next, the principle of the deburring process will be explained with reference to FIG.
この図において、第3図と同一符号は同一部分を示し、
5はU 、ガス、6はNaOH溶液、7は陽極、8は直
流電源、9は0.ガス、10は溶液槽である。In this figure, the same symbols as in FIG. 3 indicate the same parts,
5 is U, gas, 6 is NaOH solution, 7 is an anode, 8 is a DC power supply, 9 is 0. Gas, 10 is a solution tank.
薄ばりの除去は、まずNaOH溶液6中にa脂封止後の
半導体装置を浸漬し、その外部リード2を陰極として直
流電圧を印加する。そして、このNaOH溶液6の電気
分解により半導体装置の外部リード2、すなわち陰極側
にH2ガス5が生成される。このH、ガス5の生成は、
半導体装置の外部リード2と外部リード2上に付着した
薄ばり4の間に侵入したNaOH溶wR溶化R6ても行
われるため、薄ばり4は、薄ばり4の下の外部り−ド2
より発生した夏(2ガス5によって浮き上がる。To remove the thin burrs, first, the semiconductor device sealed with a-liquid is immersed in a NaOH solution 6, and a DC voltage is applied using the external lead 2 as a cathode. Then, by electrolysis of this NaOH solution 6, H2 gas 5 is generated on the external lead 2 of the semiconductor device, that is, on the cathode side. The generation of this H gas 5 is
NaOH dissolution wR dissolution R6 which has entered between the external lead 2 of the semiconductor device and the thin burr 4 attached on the external lead 2 is also performed, so that the thin burr 4 is removed from the outer lead 2 under the thin burr 4.
Summer (2 gases 5 floats up).
この工程を電解ぼり収りと呼ぶ。This process is called electrolysis.
次に、外部リード2上に浮き上がった薄ばり4をNaO
H溶液6中で超音波洗浄を行い、超音波振動によって機
械的に除去する。この方法を超音波ぼり取りと呼ぶ。Next, remove the thin burr 4 that has risen above the external lead 2 using NaO
Ultrasonic cleaning is performed in H solution 6 and mechanically removed by ultrasonic vibration. This method is called ultrasonic scraping.
また、この超音波洗浄によらず高圧水の水流による機械
的な除去方法も一般によ(用いられる。Additionally, a mechanical removal method using a stream of high-pressure water is also commonly used instead of this ultrasonic cleaning.
この方法を水圧ぼり取りと呼ぶ。This method is called hydraulic stripping.
上記のような従来の半導体装置のばり取り方法において
、電解ぼり取り後に行う薄ばり4の機械的除去法として
は、水圧ぼり取りが最もWI便ではあるが、半導体装置
の*n8部に高圧水を直接噴射した場合、樹脂部にダメ
ージが与えられるため、IfI!脂部を高圧水流から遮
蔽するための治具が必要であるうえ、樹脂外形の異なる
品種を処理する場合には治具の交換を要し、少量多品種
の処理では実施が困難であるという問題点があった。In the conventional deburring method for semiconductor devices as described above, water pressure deburring is the most convenient method for mechanically removing thin burrs 4 after electrolytic deburring. If it is directly injected, it will damage the resin part, so IfI! A jig is required to shield the fat part from high-pressure water flow, and the jig must be replaced when processing products with different resin external shapes, making it difficult to implement when processing a large number of products in small quantities. There was a point.
また、超音波ぼり取りによる除去法は、多品種に対する
汎用性はあるが、高圧水による除去法に比べ、薄ばり4
に与える外力が小さく、多量の薄ばり4が発生した場合
、電解ばり取りでNaOH溶液6が薄ばり4と外部リー
ド2の間に侵入することができなかった部位の薄ばり4
の除去が困難になるという問題点があった。In addition, although the removal method using ultrasonic deburring is versatile for a wide variety of products, compared to the removal method using high-pressure water, it is less
If the external force applied to is small and a large amount of thin burrs 4 is generated, the thin burrs 4 will be removed in areas where the NaOH solution 6 could not penetrate between the thin burrs 4 and the external lead 2 during electrolytic deburring.
There was a problem in that it became difficult to remove.
また、電解ぼり取り中に超音波洗浄を行って効果を増す
ことも考えられたが、逆に電気分解によって生成される
はずのH3ガス5の気泡が発生しな(なるという問題点
があった。It was also considered that ultrasonic cleaning could be performed during electrolysis to increase the effect, but this resulted in the problem that the bubbles of H3 gas 5 that were supposed to be generated by electrolysis were not generated. .
この発明は、かかる問題点を解決するためになされたも
ので、1ItI1部にダメージを与えることなく、多品
種に対する汎用性があり、かつ薄ばりの除去を確実に行
うことができる樹脂成型品のばり取り方法を得ることを
目的とする。This invention was made to solve these problems, and it is a resin molded product that is versatile for a wide variety of products and can reliably remove thinning burrs without damaging the 1ItI1 part. The purpose is to obtain a deburring method.
この発明に係る樹脂成型品のばり取り方法は、水溶液に
樹脂成型品を浸漬した後、V1g脂成型品の金属部を一
方の電極として水溶液の電気分解を行う工程と、水溶液
内で金属部の超音波洗浄を行う工程とを交互に繰り返す
ものである。The method for deburring resin molded products according to the present invention includes the steps of immersing the resin molded product in an aqueous solution, and then electrolyzing the aqueous solution using the metal part of the V1g resin molded product as one electrode; The process of performing ultrasonic cleaning is repeated alternately.
この発明においては、電気分解時に電極となる金属部よ
り発生するガスによる金属部に付着した薄ばりの剥離と
、剥離した薄ばりを除去するための超音波洗浄とが交互
に繰り返し行われる。In this invention, peeling of thin burrs attached to the metal part by gas generated from the metal part serving as an electrode during electrolysis and ultrasonic cleaning for removing the peeled thin burrs are alternately and repeatedly performed.
第1図はこの発明の樹脂成型品のばり取り方法の一実施
例を説明するための図である。FIG. 1 is a diagram for explaining an embodiment of the method for removing burrs from a resin molded product according to the present invention.
この図において、第4図と同一符号は同一部分を示し、
11は超音波発振電源、12は超音波振動子、13は制
御回路である。In this figure, the same symbols as in FIG. 4 indicate the same parts,
11 is an ultrasonic oscillation power supply, 12 is an ultrasonic transducer, and 13 is a control circuit.
次にこの発明の樹脂成型品のばり取り方法について説明
する。Next, a method for removing burrs from a resin molded product according to the present invention will be explained.
この発明は、電解ぼり取りと超音波ぼり収りとを短い周
期で交互に繰り返し行うことにより、ぼり取りの効果を
増す点に特徴がある。The present invention is characterized in that the effect of deburring is increased by repeating electrolytic deburring and ultrasonic deburring in a short cycle alternately.
すなわち、制御回#13の制御により、第2図(a)の
タイミングチャートに示すような一定時間、まずNaO
H溶液6中に浸漬した樹脂封止後の半導体装置の外部リ
ード2を、例えば陰極として直流電圧を印加してN a
Ol(溶液6の電気分解により半導体装置の外部リー
ド2と薄ばり4との間に11□ガス5を発生させ、薄ば
り4を剥離する。次いで、第2図(b)のタイミングチ
ャートに示すような一定時間、超音波振動子12に超音
波発振電源11から高周波信号を加えて超音波洗浄を行
う。That is, under the control of control circuit #13, NaO is first heated for a certain period of time as shown in the timing chart of FIG.
The external leads 2 of the semiconductor device immersed in the H solution 6 and sealed with a resin are used as cathodes, for example, by applying a DC voltage to the N a
11□ gas 5 is generated between the external lead 2 of the semiconductor device and the thin burr 4 by electrolysis of the solution 6, and the thin burr 4 is peeled off. Ultrasonic cleaning is performed by applying a high frequency signal from the ultrasonic oscillation power source 11 to the ultrasonic vibrator 12 for a certain period of time.
このように電解ぼり収りと超音波洗浄とを短い周期で交
互に繰り返し行うことで、電解ぼり取り中に超音波振動
を行うことにより電気分解によって生成されるはずのH
8ガスの気泡の発生が阻害されるという問題を解消でき
、2工程を同一槽内でほぼ同時に実施できる。このため
、これらの相乗効果による完全なぼり収りを汎用性を損
なうことなく行うことができる。In this way, by repeating electrolytic sludge collection and ultrasonic cleaning alternately in short cycles, the H that would be generated by electrolysis due to ultrasonic vibration during electrolytic sludge removal is removed.
The problem of inhibiting the generation of bubbles of 8 gases can be solved, and the two steps can be carried out almost simultaneously in the same tank. Therefore, the synergistic effect of these can be used to achieve a perfect fit without impairing versatility.
なお、上記実施例では、半導体装置のばり取りについて
説明したが、この発明は半導体装置のみに限らず、他の
vI4I4型品の金属部に付着した薄ばりの除去に応用
することもできる。Incidentally, in the above embodiment, description has been made regarding the removal of burrs from semiconductor devices, but the present invention is not limited to only semiconductor devices, but can also be applied to the removal of thin burrs attached to metal parts of other vI4I4 type products.
この発明は以上説明したとおり、水溶液に樹脂成型品を
浸漬した後、樹脂成型品の金属部を一方の電極として水
溶液の電気分解を行う工程と、水溶液内で金属部の超音
波洗浄を行う工程とを交互に繰り返すので、4Itws
部にダメージを与えることなく、かつ同一槽内で薄ばり
の除去を確実に行うことができるという効果がある。As explained above, this invention includes a step of immersing a resin molded product in an aqueous solution, then electrolyzing the aqueous solution using the metal part of the resin molded product as one electrode, and a process of ultrasonically cleaning the metal part in the aqueous solution. Since it is repeated alternately, 4Itws
This has the effect that thinning burrs can be reliably removed in the same tank without damaging the parts.
第1図はこの発明の樹脂成型品のばり取り方法の一実施
例を説明するための図、第一2図はfH源の切換えを説
明するためのタイミングチャート、第3図は半導体装置
の樹脂封止後に発生した薄ばりの発生例を示す図、第4
図は従来のばり取り方法を説明するための図である。
図において、1はパッケージ樹脂部、2は外部リード、
3はタイバー、4は薄ばり、5はH2ガス、6はNaO
H溶液、7は陽極、8は直流電源、9は0.ガス、10
は溶液槽、11は超音波発振電源、12は超音波振動子
、13は制御回路である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 (外2名)第1図
第2図
第3図
第4図FIG. 1 is a diagram for explaining an embodiment of the method for removing burrs from resin molded products of the present invention, FIG. 12 is a timing chart for explaining switching of the fH source, and FIG. Diagram 4 showing an example of thin burrs occurring after sealing.
The figure is a diagram for explaining a conventional deburring method. In the figure, 1 is the package resin part, 2 is the external lead,
3 is tie bar, 4 is thin beam, 5 is H2 gas, 6 is NaO
H solution, 7 is an anode, 8 is a DC power supply, 9 is 0. gas, 10
11 is an ultrasonic oscillation power supply, 12 is an ultrasonic transducer, and 13 is a control circuit. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
た樹脂薄ばりの除去を行う樹脂成型品のばり取り方法に
おいて、水溶液に前記樹脂成型品を浸漬した後、前記樹
脂成型品の前記金属部を一方の電極として前記水溶液の
電気分解を行う工程と、前記水溶液内で前記金属部の超
音波洗浄を行う工程とを交互に繰り返すことを特徴とす
る樹脂成型品のばり取り方法。In a method for removing burrs from a resin molded product that flows out and adheres to a metal part other than the sealed part during resin sealing, the resin molded product is immersed in an aqueous solution, and then the resin molded product is immersed in an aqueous solution. A method for deburring a resin molded product, comprising alternately repeating a step of electrolyzing the aqueous solution using the metal part as one electrode and a step of ultrasonically cleaning the metal part in the aqueous solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP361687A JPS63172432A (en) | 1987-01-09 | 1987-01-09 | Method of deburring resin molded product |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP361687A JPS63172432A (en) | 1987-01-09 | 1987-01-09 | Method of deburring resin molded product |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63172432A true JPS63172432A (en) | 1988-07-16 |
Family
ID=11562424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP361687A Pending JPS63172432A (en) | 1987-01-09 | 1987-01-09 | Method of deburring resin molded product |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63172432A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070041A (en) * | 1988-08-12 | 1991-12-03 | Mitsui Petrochemical Industries, Ltd. | Method of removing flash from a semiconductor leadframe using coated leadframe and solvent |
JPH05148699A (en) * | 1991-11-22 | 1993-06-15 | Kanbayashi Seisakusho:Kk | Electrolytic cleaning method and device |
KR20000012443A (en) * | 1999-12-04 | 2000-03-06 | 김무 | Method for cleaning lead frame materials of semiconductor package |
US20140027305A1 (en) * | 2012-07-26 | 2014-01-30 | Cook Medical Technologies Llc | Ultrasonic disruption of an anodotic film during electropolishing of medical implants |
-
1987
- 1987-01-09 JP JP361687A patent/JPS63172432A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070041A (en) * | 1988-08-12 | 1991-12-03 | Mitsui Petrochemical Industries, Ltd. | Method of removing flash from a semiconductor leadframe using coated leadframe and solvent |
JPH05148699A (en) * | 1991-11-22 | 1993-06-15 | Kanbayashi Seisakusho:Kk | Electrolytic cleaning method and device |
KR20000012443A (en) * | 1999-12-04 | 2000-03-06 | 김무 | Method for cleaning lead frame materials of semiconductor package |
US20140027305A1 (en) * | 2012-07-26 | 2014-01-30 | Cook Medical Technologies Llc | Ultrasonic disruption of an anodotic film during electropolishing of medical implants |
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