JPS63170944A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63170944A JPS63170944A JP245987A JP245987A JPS63170944A JP S63170944 A JPS63170944 A JP S63170944A JP 245987 A JP245987 A JP 245987A JP 245987 A JP245987 A JP 245987A JP S63170944 A JPS63170944 A JP S63170944A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- plastic resin
- added
- resin
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000000088 plastic resin Substances 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 24
- 239000000945 filler Substances 0.000 claims abstract description 20
- 239000003822 epoxy resin Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 6
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 16
- 238000012216 screening Methods 0.000 claims 1
- 238000001721 transfer moulding Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- -1 e.g. Substances 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 238000002207 thermal evaporation Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体素子がプラスチック樹脂にて封止さ
れた半導体装置、特に放熱性に優れた半導体装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a semiconductor element is sealed with a plastic resin, and particularly to a semiconductor device with excellent heat dissipation.
第４図は従来の半導体装置の一例の斜視図である。図に
おいて、１はプラスチック樹脂、４２はプラスチック樹
脂１に添加された充填材、３はプラスチック樹脂１にて
封止された半導体素子、４は半導体素子３と電気的に接
続された外部端子、４０は従来の半導体装置である。FIG. 4 is a perspective view of an example of a conventional semiconductor device. In the figure, 1 is a plastic resin, 42 is a filler added to the plastic resin 1, 3 is a semiconductor element sealed with the plastic resin 1, 4 is an external terminal electrically connected to the semiconductor element 3, 40 is a conventional semiconductor device.
従来の半導体装置４０は、半導体素子３を、例えばエポ
キシ樹脂やシリコン樹脂の如きプラスチック樹脂からな
り、これに充填材４２（フィラー）として例えばシリカ
やアルミナなどを添加したプラスチック樹脂ｌにて封止
したものであった。In the conventional semiconductor device 40, the semiconductor element 3 is made of a plastic resin such as epoxy resin or silicone resin, and is sealed with a plastic resin l to which silica, alumina, etc. are added as a filler 42 (filler). It was something.
一般にプラスチック・モールド・パンケージ型の半導体
装置においては、該装置のプラスチック樹脂へ添加され
る充填材は、トランスファ・モールディングにおける樹
脂の滴下及び流下を防止し、耐薬品性・耐熱性・電気絶
縁性の向上や、機械的補強を図るとともに、熱伝導率を
大きくして放熱性を高めるために添加されている。In general, in plastic mold pancage type semiconductor devices, the filler added to the plastic resin of the device prevents the resin from dripping and flowing down during transfer molding, and has chemical resistance, heat resistance, and electrical insulation properties. It is added to improve thermal conductivity and mechanical reinforcement, as well as to increase thermal conductivity and improve heat dissipation.
このうち本発明の目的と関連する熱伝導率に関しては、
例えば熱伝導率が０．１５−・ｌｍ−１・Ｋ−１のエポ
キシ樹脂に充填材として例えばシリカを３９容積％添加
した場合には０．７６−・ｍ −Ｋに、アルミナを４
８容積％添加した場合には１．４２−・ｍ−にと大きく
なる。Regarding thermal conductivity, which is related to the purpose of the present invention,
For example, if 39% by volume of silica is added as a filler to an epoxy resin with a thermal conductivity of 0.15-·lm-1·K-1, the thermal conductivity becomes 0.76-·m-K, and 4% alumina is added as a filler.
When 8% by volume is added, the amount increases to 1.42-·m-.
このように熱伝導率が増大するのは、これら充填材の熱
伝導率がプラスチック樹脂のそれよりも大きいためであ
る。This increase in thermal conductivity is due to the fact that the thermal conductivity of these fillers is greater than that of the plastic resin.
しかし、上述のように、半導体素子３を例えばシリカや
アルミナの如き充填材４２の添加されたプラスチック樹
脂ｌにて封止してなる従来の半導体装置４０では、消費
電力の大きい半導体素子３を安定した温度特性で動作さ
せる必要があり、高信頼性が要求される、例えば超高速
動作を行わせる半導体装置としては、放熱性が未だ不十
分であるという問題があった。ここで従来の熱伝導率の
大きい充填材としては、酸化ベリリウムがあるが、この
粉末は人体に有害であって取扱いに（＜、半導体装置へ
は適用しがたいものであった。However, as described above, in the conventional semiconductor device 40 in which the semiconductor element 3 is sealed with a plastic resin l to which a filler 42 such as silica or alumina is added, the semiconductor element 3 which consumes a large amount of power can be stabilized. There is a problem in that heat dissipation is still insufficient for semiconductor devices that require high reliability, for example, ultra-high-speed operation. Beryllium oxide is a conventional filler with high thermal conductivity, but this powder is harmful to the human body and difficult to handle (<, and difficult to apply to semiconductor devices).
この発明は上記のような従来の問題点を解決するために
なされたもので、熱伝導率の大きいプラスチック樹脂封
止型の半導体装置を提供することを目的としている。The present invention was made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a plastic resin-sealed semiconductor device with high thermal conductivity.
本発明に係る半導体装置は、充填材としてダイアモンド
を添加したプラスチック樹脂を用いて封止を行なったも
のでｈＳ。The semiconductor device according to the present invention is sealed using a plastic resin containing diamond as a filler.
一般に、シリカの熱伝導率は０．３〜１．５ トｒａ−
’・Ｋ″１、アルミナは３〜２０ Ｗ−ｃｍ−’・Ｋ−
１である。これらに対しダイアモンドの熱伝導率は極め
て大きく、天然のダイアモンドで９００〜２β００卜」
・Ｋであり、最近の合成ダイアモンドでは１１００−
・ｌｌ１−１・Ｋ−１が得られるようになっているが、
本発明ではこの合成ダイアモンドを充填材として用いて
いるから、従来のシリカやアルミナの充填材を添加した
場合と比べ、熱伝導率をかなり増大させることができる
。Generally, the thermal conductivity of silica is 0.3 to 1.5 tra-
'・K''1, alumina is 3~20 W-cm-'・K-
It is 1. On the other hand, the thermal conductivity of diamond is extremely high, with a natural diamond having a thermal conductivity of 900 to 2β00 m.
・K, and recent synthetic diamonds are 1100-
・ll1-1・K-1 can be obtained, but
Since this synthetic diamond is used as a filler in the present invention, the thermal conductivity can be significantly increased compared to the case where conventional silica or alumina fillers are added.
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図（５）（ｂｌは本発明の一実施例による半導体装
置の斜視図及び断面図である０図において、１はプラス
チック樹脂、２はプラスチック樹脂１に添加された充填
材の合成ダイアモンド粉末である。FIG. 1 (5) (bl is a perspective view and a sectional view of a semiconductor device according to an embodiment of the present invention. In FIG. 0, 1 is a plastic resin, and 2 is a synthetic diamond powder as a filler added to the plastic resin 1. It is.
天然のダイアモンドは極めて高価で実際に用い難いが、
これに対し合成ダイアモンド辱は、最近の合成技術の進
歩により、実用化の域に入ってきている。３はプラスチ
ック樹脂１にて封止された半導体素子、４は半導体素子
３と電気的に接続された外部端子、１０は本発明の一実
施例の半導体装置である。Natural diamonds are extremely expensive and difficult to use, but
On the other hand, synthetic diamond fabrication has entered the realm of practical use due to recent advances in synthesis technology. 3 is a semiconductor element sealed with a plastic resin 1, 4 is an external terminal electrically connected to the semiconductor element 3, and 10 is a semiconductor device according to an embodiment of the present invention.
本半導体装置１０は次のようにして製造される。This semiconductor device 10 is manufactured as follows.
充填材として例えば超高圧下で合成もしくは熱的気相成
長法で合成したダイアモンドをふるいわけし、粒径５〜
２０μｍの粉末を選びだし合成ダイアモンド粉末２とす
る。この合成ダイアモンド粉末２を３０〜３５容積％で
例えばエポキシ樹脂のプラスチック樹脂１へ例えばジエ
チレントリアミンなどの硬化剤とともに添加し、かくは
ん混合する。As a filler, for example, diamonds synthesized under ultra-high pressure or by thermal vapor growth are sieved, and diamonds with a particle size of 5 to
A powder of 20 μm was selected and designated as synthetic diamond powder 2. This synthetic diamond powder 2 is added in an amount of 30 to 35% by volume to the plastic resin 1, such as an epoxy resin, together with a curing agent such as diethylenetriamine, and mixed by stirring.
そしてこの混合材料を用いて、周知のトランスファ・モ
ールディング法により、外部端子４と接続された半導体
素子３を樹脂封止し、タイ・バー・カットなどプラスチ
ック・モールド・パフケージ形成に必要な周知の所定製
造工程を経て半導体装置１０とする。トランスファ・モ
ールド時におけるプラスチック樹脂１のキュア温度・時
間は例えば２００℃・３０分間とする。Then, using this mixed material, the semiconductor element 3 connected to the external terminal 4 is sealed with resin by the well-known transfer molding method, and the well-known predetermined steps necessary for forming the plastic mold and puff cage, such as ties, bars, and cuts, are applied. A semiconductor device 10 is obtained through the manufacturing process. The curing temperature and time of the plastic resin 1 during transfer molding are, for example, 200° C. and 30 minutes.
こうして硬化した状態のプラスチック樹脂ｌの熱伝導率
は、上記実施例では２．０〜３．鵠・、−１・Ｋ−１で
ある。従って本発明の半導体装置１０は同一形状寸法の
従来の半導体装置４０と比べ、放熱性は約２倍以上大き
い。The thermal conductivity of the plastic resin l in the thus cured state is 2.0 to 3.0 in the above example. Moe・、-1・K-1. Therefore, the semiconductor device 10 of the present invention has heat dissipation that is approximately twice as high as that of the conventional semiconductor device 40 having the same shape and dimensions.
第２図、第３図はそれぞれ本発明の他の実施例の斜視図
及び断面図を示す。両図において、５は例えば金属片の
如き放熱手段、５ａは半導体素子３からの熱を主に伝導
する放熱手段５の主要部、２０．３０は本発明の半導体
装置である。これらの実施例の半導体装置２０．３０は
、少なくとも半導体素子３を囲む領域１ａが充填材とし
て合成ダイアモンド粉末２の添加されたプラスチック樹
脂１からなっており、且つ前記領域１ａと接着して放熱
手段５が設けられている。FIGS. 2 and 3 show a perspective view and a sectional view, respectively, of another embodiment of the invention. In both figures, 5 is a heat dissipation means such as a metal piece, 5a is a main part of the heat dissipation means 5 which mainly conducts heat from the semiconductor element 3, and 20.30 is a semiconductor device of the present invention. In the semiconductor devices 20 and 30 of these embodiments, at least a region 1a surrounding a semiconductor element 3 is made of plastic resin 1 to which synthetic diamond powder 2 is added as a filler, and is bonded to the region 1a to form a heat dissipation means. 5 is provided.
第２図に示す装置では、放熱手段５は領域１ａが半導体
装置２００表面に至るまで在るため、例えば上面２０ａ
の如き半導体装置２０の実装時に差し支えのない個所に
、領域１ａと接着させて設けられている。放熱手段５は
、図示していないが、これに冷却装置や冷却フィンを接
着・追加してもよい、また放熱手段５はプラスチック樹
脂ｌ外へ延長され、この延長部分を冷却フィンとしたり
、若しくはこの延長部分に冷却装置や冷却フィンを接着
・追加してもよい。In the device shown in FIG. 2, the region 1a of the heat dissipating means 5 extends up to the surface of the semiconductor device 200, so for example, the upper surface 20a
It is provided in a location where there is no problem when mounting the semiconductor device 20, such as, by being bonded to the region 1a. Although not shown, a cooling device or cooling fins may be attached or added to the heat dissipating means 5, or the heat dissipating means 5 may be extended outside the plastic resin l, and this extended portion may be used as a cooling fin. A cooling device or cooling fins may be attached or added to this extension.
また第３図に示す装置では、放熱手段５は領域Ｉａが半
導体装置３００表面に至るまで存在していないため、そ
の主要部５ａを半導体素子３に近接した個所に設け、そ
の他の部分は第３図（ａ）に示されるようにプラスチッ
ク樹脂１の例えば上面３０ａに在るように配設し設けら
れている。Further, in the device shown in FIG. 3, since the heat dissipation means 5 does not exist until the region Ia reaches the surface of the semiconductor device 300, its main portion 5a is provided in a location close to the semiconductor element 3, and the other portions are provided in the third region. As shown in Figure (a), it is arranged and provided on, for example, the upper surface 30a of the plastic resin 1.
これらの実施例の半導体装置２０．３０の製造において
は、例えば、領域１ａを合成ダイアモンド粉末２の添加
されたプラスチック樹脂１でモールドする第１段階と、
引き続き領域１ａ以外を合成ダイアモンド粉末２を添加
していないプラスチック樹脂１でモールドする第２段階
に、トランスファ・モールディングを分割して製造でき
る。In manufacturing the semiconductor device 20, 30 of these embodiments, for example, a first step of molding the region 1a with a plastic resin 1 to which synthetic diamond powder 2 is added;
Subsequently, the transfer molding can be manufactured by dividing into a second step in which the area other than the area 1a is molded with the plastic resin 1 to which the synthetic diamond powder 2 is not added.
これらの実施例では、少なくとも半導体素子３を囲む領
域にのみ合成ダイアモンド粉末２を添加するので、合成
ダイアモンド粉末２の使用量が少なくて経済性がよい。In these embodiments, since the synthetic diamond powder 2 is added only to at least the area surrounding the semiconductor element 3, the amount of synthetic diamond powder 2 used is small and economical.
また放熱手段５により半導体装置２０．３０の放熱性が
一層高まるものである。Further, the heat dissipation means 5 further enhances the heat dissipation performance of the semiconductor device 20, 30.
以上述べたように本発明に係る半導体装置によれば、充
填材として合成ダイアモンドを添加したプラスチック樹
脂を用いて封止を行なったから、熱伝導率の大きい、放
熱性の改善された、安定した温度特性で動作させ得る、
高信頼性の半導体装置が得られる効果がある。As described above, according to the semiconductor device of the present invention, since the sealing is performed using a plastic resin containing synthetic diamond as a filler, it has high thermal conductivity, improved heat dissipation, and stable temperature. can be operated with characteristics,
This has the effect of providing a highly reliable semiconductor device.
よる半導体装置を示す斜視図および断面図、第４図は従
来の半導体装置の斜視図および断面図である。FIG. 4 is a perspective view and a cross-sectional view of a conventional semiconductor device.
１・・・プラスチック樹脂、２・・・合成ダイアモンド
粉末、３・・・半導体素子、４・・・外部端子、５・・
・放熱手段、１０，２０．３０・・・本発明の半導体装
置、４０・・・従来の半導体装置、１ａ・・・半導体素
子を囲む領域。DESCRIPTION OF SYMBOLS 1...Plastic resin, 2...Synthetic diamond powder, 3...Semiconductor element, 4...External terminal, 5...
- Heat dissipation means, 10, 20. 30... Semiconductor device of the present invention, 40... Conventional semiconductor device, 1a... Area surrounding the semiconductor element.
なお図中同一符号は同−又は相当部分を示す。Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (4)
る半導体装置において、 前記プラスチック樹脂が充填材として合成ダイアモンド
粉末の添加されたプラスチック樹脂であることを特徴と
する半導体装置。(1) A semiconductor device in which a semiconductor element is sealed with a plastic resin, wherein the plastic resin is a plastic resin to which synthetic diamond powder is added as a filler.
記合成ダイアモンド粉末が超高圧下で合成もしくは熱的
気相成長法で合成されたダイアモンドをふるいわけた粒
径５〜２０μｍの合成ダイアモンド粉末であることを特
徴とする特許請求の範囲第１項記載の半導体装置。(2) The above-mentioned plastic resin is an epoxy resin, and the above-mentioned synthetic diamond powder is a synthetic diamond powder with a particle size of 5 to 20 μm obtained by screening diamonds synthesized under ultra-high pressure or by thermal vapor growth method. A semiconductor device according to claim 1, characterized in that:
加量が３０〜３５容積％であることを特徴とする特許請
求の範囲第２項記載の半導体装置。(3) The semiconductor device according to claim 2, wherein the amount of synthetic diamond powder added to the epoxy resin is 30 to 35% by volume.
アモンド粉末の添加されたプラスチック樹脂からなり、
前記領域と接着して放熱手段が設けられていることを特
徴とする特許請求の範囲第１項ないし第３項のいずれか
に記載の半導体装置。(4) At least a region surrounding the semiconductor element is made of a plastic resin to which the synthetic diamond powder is added;
4. The semiconductor device according to claim 1, further comprising a heat dissipating means bonded to said region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP245987A JPS63170944A (en) | 1987-01-08 | 1987-01-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP245987A JPS63170944A (en) | 1987-01-08 | 1987-01-08 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63170944A true JPS63170944A (en) | 1988-07-14 |
Family
ID=11529884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP245987A Pending JPS63170944A (en) | 1987-01-08 | 1987-01-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63170944A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369299A (en) * | 1993-07-22 | 1994-11-29 | National Semiconductor Corporation | Tamper resistant integrated circuit structure |
| US5468990A (en) * | 1993-07-22 | 1995-11-21 | National Semiconductor Corp. | Structures for preventing reverse engineering of integrated circuits |
| US5475251A (en) * | 1994-05-31 | 1995-12-12 | National Semiconductor Corporation | Secure non-volatile memory cell |
-
1987
- 1987-01-08 JP JP245987A patent/JPS63170944A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369299A (en) * | 1993-07-22 | 1994-11-29 | National Semiconductor Corporation | Tamper resistant integrated circuit structure |
| US5468990A (en) * | 1993-07-22 | 1995-11-21 | National Semiconductor Corp. | Structures for preventing reverse engineering of integrated circuits |
| US5821582A (en) * | 1993-07-22 | 1998-10-13 | National Semiconductor Corp. | Structures for preventing reverse engineering of integrated circuits |
| US5475251A (en) * | 1994-05-31 | 1995-12-12 | National Semiconductor Corporation | Secure non-volatile memory cell |
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