JPS63169051A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63169051A JPS63169051A JP65787A JP65787A JPS63169051A JP S63169051 A JPS63169051 A JP S63169051A JP 65787 A JP65787 A JP 65787A JP 65787 A JP65787 A JP 65787A JP S63169051 A JPS63169051 A JP S63169051A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- semiconductor element
- epoxy resin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 abstract description 9
- 229920000647 polyepoxide Polymers 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GXCLVBGFBYZDAG-UHFFFAOYSA-N N-[2-(1H-indol-3-yl)ethyl]-N-methylprop-2-en-1-amine Chemical compound CN(CCC1=CNC2=C1C=CC=C2)CC=C GXCLVBGFBYZDAG-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 235000015278 beef Nutrition 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000002599 functional magnetic resonance imaging Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 210000003041 ligament Anatomy 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に係シ、特にその樹脂封止部に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a resin sealing portion thereof.
従来、ｗ脂封止型半導体装ｆＭｒｉ、第３図に示す如く
、アイランド７に固着された半導体素子４の外周部を、
充填材や添加剤等を含んだエポキシ糸舖脂３によって成
形されている。半導体素子４上のランドは、ボンディン
グワイヤ５でリード６に電気的に接続されている。Conventionally, in the w fat-sealed semiconductor device fMRI, as shown in FIG.
It is molded from epoxy thread or fat 3 containing fillers and additives. Lands on the semiconductor element 4 are electrically connected to leads 6 by bonding wires 5.
前述した従来のｍ脂封止型の半導体装置は、封止材村上
してエボ牛シ系＋＊８ＷＩ３を使用しているため、不貢
的ｅＣ水分を透過させる。この透過した水分は、樹脂３
中の不純物を溶出させ、半導体素子４衣囲のアルミニウ
ム配線パターンを１４食させ、半導体装置の動作不良に
碑く。このため、封止用材料のエポキシ賛催に種々の冷
加剤を加えて対策を竹なっているが、水分の透過を小さ
くすることｒｉａ（釆ず、半導体素子１のアル、−ニウ
ム配＃ｊｌが腐食される事故がたびたび匙こっている。The conventional mold-sealed semiconductor device described above uses the sealing material Murakami Ebogyushi +*8WI3, which allows non-contributing eC moisture to pass through. This permeated moisture is transferred to the resin 3
The impurities inside are eluted and the aluminum wiring pattern surrounding the semiconductor element 4 is exposed to 14 times, resulting in malfunction of the semiconductor device. For this reason, countermeasures have been taken by adding various cooling agents to the epoxy sealing material. Accidents where JL corrodes occur frequently.
本発明の目的は、前記問題点を解決し、水分の透過ｉ＠
腿を遅くシ、半導体素子表面の配源の贋食をおさえ、製
品寿命を伸はした半導体装置を提供することにある。The purpose of the present invention is to solve the above problems and to improve the water permeability i@
It is an object of the present invention to provide a semiconductor device which has a longer product life by slowing down the process, suppressing the forgery of the distribution of the semiconductor element surface.
本発明の構成は、半導体素子が懐胎で封止された半導体
装置において、前記牛麹体紫子が第１の樹脂で封止され
、この第１の樹脂の表面が金ｐＡ層で機われ、さらにこ
の金私層の表面が第２の樹脂で封止されてなることを％
徴とする。The structure of the present invention is such that in a semiconductor device in which a semiconductor element is sealed in a sterilized manner, the bovine malt violet is sealed with a first resin, the surface of the first resin is covered with a gold pA layer, Furthermore, the surface of this gold layer is sealed with a second resin.
be a sign.
次に本発明について図面を参照して詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
第１図は本発明の第１の実施例の半導体装備を示す断面
図である。同図において、本実施例は、デュアル・イン
ラインのパッケージ（ＤＩＰ）型で、アイランド７に固
着した半導体素子４を核うプリフォームされたｉｌｌの
エポキシ樹脂１ｉ１を形成し、その表面を金属メヅキ層
２で〜う。この時、メ９キ層２はボンディングワイヤ５
．リード６と電気的に接触しないように、リード６の周
囲等は除去されている。さらに、この表面を最終形態と
なる第２のエポキシ樹脂３で櫟う。FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention. In the figure, this embodiment is of a dual in-line package (DIP) type, and a preformed epoxy resin 1i1 is formed around a semiconductor element 4 fixed to an island 7, and its surface is covered with a metal mesh layer. It's 2. At this time, the bonding wire 5
．． The periphery of the lead 6 is removed to prevent electrical contact with the lead 6. Furthermore, this surface is coated with a second epoxy resin 3 to form the final form.
ここで、第１のエポキシ樹脂１ｒｔ％遡常の低圧トラン
スファ法によって行った。その後、パラジウム人ペース
トをプリフォーム済エポキシ明脂に塗布、活性化処理（
１０％ＨＣ１，１分）ｋｈい、無電解ニッケルメッキを
２μｍ乃至３μｍ程度形成する。しかる後、第２のエポ
キシ樹脂３を低圧トランスファ法によって成形する。二
ヴケルメッキ液は、通常の硫酸ニッケル、シリアン酸ナ
トリウム系のメッキ液で、６５°Ｃ１３５分間浸漬した
。Here, a conventional low pressure transfer method using 1rt% of the first epoxy resin was used. After that, palladium paste is applied to the preformed epoxy resin and activated (
10%HC (1 minute), electroless nickel plating is formed to a thickness of about 2 to 3 μm. Thereafter, the second epoxy resin 3 is molded by a low pressure transfer method. The NIVKEL plating solution was a normal nickel sulfate and sodium syanate based plating solution, and the samples were immersed at 65°C for 135 minutes.
第２図は本４−明の第２の実施例の住°壱体装飯を示す
断面図である。同図において、本実施例の牛専体装餉は
、薄型パッケージである。第１図と異なるＢ「は、牛樹
体紮子４の上面のみ、メ９キ層を施している点である。FIG. 2 is a sectional view showing the housing equipment of the second embodiment of the present invention. In the same figure, the beef exclusive packaging according to this embodiment is a thin package. The difference from Fig. 1 is that only the upper surface of the cylindrical ligament 4 is coated with a metal layer.
半導体素子４の下１ｆＤは、アイランド７にて保ｈδれ
−〔いることもあって、ＤＩＰと＃に＃丘１ｂＪ様な効
呆力坏すられだ。The lower 1fD of the semiconductor element 4 is held by the island 7, so that the DIP and # have a similar effect to the #hill 1bJ.
従来の叫脂ルｊ止型のＤＩＰ型半導体装崗を、８５”０
．８５ｑ６ＲＨの雰Ｗｚ中で保Ｗ−すると、２００Ｈ乃
至３００Ｈで飽オロするが、本発明に従−） ｆｃ勤向
形ＤＩＰ型のものを同条件で保管すると、７００Ｈ乃至
８００Ｈと約３倍に伸ひる。同様のことは、ＰＣＴ（プ
レッシャー・クツカー・テスト）でも確認されている。The conventional DIP type semiconductor mounting plate with 85”0
．． When stored in an atmosphere Wz of 85q6RH, it becomes saturated at 200H to 300H, but according to the present invention, when an fc working type DIP type is stored under the same conditions, it increases by about 3 times from 700H to 800H. Hiru. The same thing has been confirmed in the PCT (Pressure Kutzker Test).
その結果、種々の耐湿性試験において、本弁明によれば
、水分の透過時間が長くなり、アルハニウム配線腐食が
起きにくくなり、製品寿命も３倍に伸びた。As a result, in various moisture resistance tests, according to the present invention, moisture permeation time became longer, corrosion of aluminum wiring became less likely to occur, and product life was extended three times.
また第２の実＆例の薄型パッケージの場合は、側面方向
からの水分の浸入は、はぼ無視出来るため、上面のみで
有効であると考えられる。Furthermore, in the case of the thin package of the second embodiment and example, the infiltration of moisture from the side direction can be almost ignored, so it is considered that it is effective only on the top surface.
なお、本実施例では、ニッケルメッキを例に述べたが、
他の金属のメッキでも効果がある。In addition, in this example, nickel plating was described as an example, but
It is also effective for plating other metals.
以上説明した様に、本発明は、エポキシ樹脂の中間部分
に、金Ｊｌｌ１層を形成することで、閣脂封止型半導体
装置内部への水分透過率が低減する効果がある。As explained above, the present invention has the effect of reducing the moisture permeability into the interior of the epoxy resin-sealed semiconductor device by forming the gold layer in the middle portion of the epoxy resin.
第１図は本発明の第１の実施例の牛傅体装置を示す断面
図、第２図は不発明の第２の実施例の半導体装置を示す
断面図、第３図は従来の半導体装置を示す断面図である
。
１．３・・・・・・エポキシ系ｍ脂、２・・・・・・金
属メッキ層、４・・・・・・半導体素子（ペレット）、
５・・・・・・ボンディングワイヤ、６・・・・・・リ
ード、７・・・・・・アイランド。FIG. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view showing a semiconductor device according to a second embodiment of the invention, and FIG. 3 is a conventional semiconductor device. FIG. 1.3...Epoxy resin, 2...Metal plating layer, 4...Semiconductor element (pellet),
5...Bonding wire, 6...Lead, 7...Island.
Claims (2)
て、前記半導体素子が第１の樹脂で封止され、この第１
の樹脂の表面が金属層で覆われ、さらに前記金属層の表
面が第２の樹脂で封止されてなることを特徴とする半導
体装置。(1) In a semiconductor device in which a semiconductor element is sealed with a resin, the semiconductor element is sealed with a first resin, and the semiconductor element is sealed with a first resin.
A semiconductor device characterized in that a surface of the resin is covered with a metal layer, and a surface of the metal layer is further sealed with a second resin.
求の範囲第（１）項記載の半導体装置。(2) The semiconductor device according to claim (1), wherein the metal layer is an electroless nickel plating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP65787A JPS63169051A (en) | 1987-01-05 | 1987-01-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP65787A JPS63169051A (en) | 1987-01-05 | 1987-01-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63169051A true JPS63169051A (en) | 1988-07-13 |
Family
ID=11479794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP65787A Pending JPS63169051A (en) | 1987-01-05 | 1987-01-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63169051A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5089879A (en) * | 1990-03-13 | 1992-02-18 | Kabushiki Kaisha Toshiba | Resin seal type semiconductor device |
| JPH04127456A (en) * | 1989-09-14 | 1992-04-28 | Toshiba Corp | Resin-sealed semiconductor device and its manufacture |
| KR20010069478A (en) * | 2001-03-27 | 2001-07-25 | 김영선 | Plastic Package with Metal Sealing : PPMS |
-
1987
- 1987-01-05 JP JP65787A patent/JPS63169051A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04127456A (en) * | 1989-09-14 | 1992-04-28 | Toshiba Corp | Resin-sealed semiconductor device and its manufacture |
| US5089879A (en) * | 1990-03-13 | 1992-02-18 | Kabushiki Kaisha Toshiba | Resin seal type semiconductor device |
| KR20010069478A (en) * | 2001-03-27 | 2001-07-25 | 김영선 | Plastic Package with Metal Sealing : PPMS |
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