JPS63169030A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63169030A JPS63169030A JP66687A JP66687A JPS63169030A JP S63169030 A JPS63169030 A JP S63169030A JP 66687 A JP66687 A JP 66687A JP 66687 A JP66687 A JP 66687A JP S63169030 A JPS63169030 A JP S63169030A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- photoresist film
- semiconductor substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 238000009832 plasma treatment Methods 0.000 claims abstract description 5
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 11
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 208000005156 Dehydration Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に被膜のエツ
チング工程を含む半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device including a film etching step.
半導体装置の製造工程では半導体基板上に形成された絶
縁膜や金属膜を所定のパターンに加工するため各種のエ
ツチング技術が使われている。In the manufacturing process of semiconductor devices, various etching techniques are used to process insulating films and metal films formed on semiconductor substrates into predetermined patterns.
第２図は従来の半導体装置の製造の途中工程における半
導体チップの断面図である。FIG. 2 is a cross-sectional view of a semiconductor chip in the middle of the manufacturing process of a conventional semiconductor device.
第２図に示すように、半導体基板１の一主面に酸化膜２
を形成し、半導体基′板１を洗浄して乾燥させた後、酸
化膜２の表面にホトレジスト膜３を形成しホＩ・レジス
ト膜３を安定させるため熱処理を行う。次に、ホトレジ
スト膜３にパターンを露光し、現像した後、ホトレジス
ト膜３の密着性を良くするための熱処理を行い、ウェッ
ト・エッチング法により酸化膜２の開孔部４を形成し、
ホＩ〜レジスＩ・膜３を除去する。この場合、ホトレジ
スト膜３と酸化膜２との界面にエツチング液がしみ込む
ことによりアンダー・力・ソト５が生ずる。As shown in FIG. 2, an oxide film 2 is formed on one main surface of the semiconductor substrate 1.
After cleaning and drying the semiconductor substrate 1, a photoresist film 3 is formed on the surface of the oxide film 2, and heat treatment is performed to stabilize the photoresist film 3. Next, after exposing and developing a pattern on the photoresist film 3, a heat treatment is performed to improve the adhesion of the photoresist film 3, and an opening 4 in the oxide film 2 is formed by a wet etching method.
Ho I to resist I and film 3 are removed. In this case, the etching solution seeps into the interface between the photoresist film 3 and the oxide film 2, causing under-etching, force, and under-etching 5.
上述した従来の半導体装置の製造方法は、ホトレジスト
膜形成前の脱水処理が不足していたり、形成時の雰囲気
が高湿度であったりすると、半導体基板とホトレジスト
膜との密着強度が弱くなりエツチング工程の時に、半導
体基板とホトレジスト膜との界面へエツチング液がしみ
込み、いわゆるアンダー・カットが発生する事がある。In the conventional semiconductor device manufacturing method described above, if the dehydration treatment before forming the photoresist film is insufficient or the atmosphere during formation is high humidity, the adhesion strength between the semiconductor substrate and the photoresist film becomes weak and the etching process is delayed. At this time, the etching solution may seep into the interface between the semiconductor substrate and the photoresist film, causing so-called undercuts.
又ホトレジスＩ−膜の現像後の熱処理が不足したりにの
熱処理からエツチング工程の間に長時間にわたり材装置
された場合などでは、ホトレジスト膜が水分を吸収し、
半導体基板とホトレジスト膜の密着強度がやはり弱くな
り、アンダー・カットが発生する。In addition, if the photoresist I-film is not properly heat-treated after development, or if the material is kept for a long time between the heat treatment and the etching process, the photoresist film absorbs moisture,
The adhesion strength between the semiconductor substrate and the photoresist film is still weakened, and undercuts occur.
本発明は、エツチング工程でアンダー・カットを生じな
い半導体装置の製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that does not cause undercuts during an etching process.
本発明の半導体装置の製造方法は、半導体基板上に形成
した被膜を写真蝕刻法により加工することを含む半導体
装置の製造方法において、前記被膜上に選択的に形成し
たホトレジスト膜をマスクとして前記被膜をウニ・ソト
・エツチング法で除去する工程の前に前記被膜と前記ホ
トレジスト膜の密着性を強化させる不活性ガスによるプ
ラズマ処理を含んで構成される。The method for manufacturing a semiconductor device of the present invention includes processing a film formed on a semiconductor substrate by photolithography, in which the film is processed by using a photoresist film selectively formed on the film as a mask. The photoresist film is subjected to plasma treatment using an inert gas to strengthen the adhesion between the film and the photoresist film before the step of removing the photoresist film using a sea urchin sotho-etching method.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の途中工程における半導体チ
ップの断面図である。FIG. 1 is a sectional view of a semiconductor chip at an intermediate step in an embodiment of the present invention.
第１図に示すように、半導体基板ｌの一主面に酸化膜２
を形成し、半導体基板１を洗浄して乾燥させた後、酸化
膜２の表面にホトレジストｙｌＡ３を形成し、ホトレジ
スト膜３に残存する溶剤を除くための熱処理を行う。次
に、ホトレジスト膜３にパターンを露光して現像した後
、ホトレジスト膜３に残っている現像時の有機溶剤の除
去およびホトレジスト膜３と酸化ｒ！Ａ２との密着性を
良くするための熱処理を行う０次に、円筒型のプラズマ
・エツチング装置により窒素ガスの流量 数百ＳＣＣＭ
（標準状態に換算した毎分当りの流量（ｃｙａ ３／ｍ
１ｎ））、圧力Ｉ Ｔ ｏ ｒ ｒ以下、電力２００〜
ｓｏｏｗで５〜２０分間の不活性ガスのプラズマ処理を
行った後ウェット・エッチング法により酸化膜３の開孔
部４を形成しホトレジスト膜３を除去する。As shown in FIG. 1, an oxide film 2 is formed on one main surface of a semiconductor substrate l.
After cleaning and drying the semiconductor substrate 1, a photoresist ylA3 is formed on the surface of the oxide film 2, and a heat treatment is performed to remove the solvent remaining in the photoresist film 3. Next, after exposing and developing a pattern on the photoresist film 3, the organic solvent remaining on the photoresist film 3 during development is removed and the photoresist film 3 is oxidized. After heat treatment to improve adhesion with A2, a cylindrical plasma etching device is used to heat the nitrogen gas at a flow rate of several hundred SCCM.
(Flow rate per minute converted to standard conditions (cya 3/m
1n)), pressure I Torr or less, power 200~
After plasma treatment with an inert gas is performed for 5 to 20 minutes using SOOW, an opening 4 in the oxide film 3 is formed by a wet etching method, and the photoresist film 3 is removed.
このように、不活性ガスによるプラズマ処理を実施した
ものではアンダー・カットが全く発生しなかっな。In this way, undercuts do not occur at all when plasma treatment is performed using an inert gas.
また、この不活性ガスのプラズマ処理時に酸素ガスを小
量（例えばＩＯ３ＣＣＭ程度）添加するとアンダー−カ
ッＩ・防止に加えてホトレジストの残渣が取除かれ歩留
りを向上させる効果を生ずるが、プラズマ処理時間は短
くする必要がある。Additionally, adding a small amount of oxygen gas (for example, about IO3CCM) during this inert gas plasma processing has the effect of preventing under-cutting and removing photoresist residue, improving yield, but it also reduces the plasma processing time. needs to be shortened.
以上説明したように本発明は、バターニングされたホト
レジスト膜をマスクとしてウェット・エッチングを行う
前に不活性ガスによるプラズマ処理を行うことにより、
ホトレジスト膜とエツチングしようとする被膜との密着
性を良くしてウェット・エッチングによるアンダー・カ
ットを防止し、精度の良い開孔部が得られる効果がある
。As explained above, the present invention performs plasma processing using an inert gas before performing wet etching using a patterned photoresist film as a mask.
This has the effect of improving the adhesion between the photoresist film and the film to be etched, preventing undercuts caused by wet etching, and providing highly accurate openings.
第１図は本発明の一実施例の途中工程における半導体チ
ップの断面図、第２図は従来の半導体装置の製造の途中
工程における半導体チップの断面図である。
■・・・半導体基板、２・・・酸化膜、３・・・ホトレ
ジスト膜、４・・・開孔部。FIG. 1 is a cross-sectional view of a semiconductor chip at an intermediate step in an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a semiconductor chip at an intermediate step in manufacturing a conventional semiconductor device. ■...Semiconductor substrate, 2...Oxide film, 3...Photoresist film, 4...Opening portion.
Claims (2)
加工することを含む半導体装置の製造方法において、前
記被膜上に選択的に形成したホトレジスト膜をマスクと
して前記被膜をウェット・エッチング法で除去する工程
の前に前記被膜と前記ホトレジスト膜の密着性を強化さ
せる不活性ガスによるプラズマ処理を行うことを特徴と
する半導体装置の製造方法。(1) In a semiconductor device manufacturing method that includes processing a film formed on a semiconductor substrate by photolithography, the film is removed by wet etching using a photoresist film selectively formed on the film as a mask. 1. A method for manufacturing a semiconductor device, comprising performing plasma treatment using an inert gas to strengthen the adhesion between the film and the photoresist film before the step.
許請求の範囲第１項記載の半導体装置の製造方法。(2) The method of manufacturing a semiconductor device according to claim 1, wherein the coating is made of an oxide of the same substance as the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP66687A JPS63169030A (en) | 1987-01-05 | 1987-01-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP66687A JPS63169030A (en) | 1987-01-05 | 1987-01-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63169030A true JPS63169030A (en) | 1988-07-13 |
Family
ID=11480062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP66687A Pending JPS63169030A (en) | 1987-01-05 | 1987-01-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63169030A (en) |
-
1987
- 1987-01-05 JP JP66687A patent/JPS63169030A/en active Pending
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