JPS63166968A - Sputtering device - Google Patents

Abstract

PURPOSE:To reduce the local attack of a target and to improve the utilization efficiency by arranging a magnet on the outside of the main cathode body of the titled sputtering device, and making the magnet movable at an appropriate speed. CONSTITUTION:A substrate 12, on which a thin film is to be formed, is held by a holder 11 in a chamber 8, a target 3 as the material for the thin film is arranged in opposition to the substrate, gaseous r is introduced, then a voltage is impressed between the substrate 12 and the target 3 to generate plasma discharge, and the gaseous Ar is ionized. The target 3 is sputtered by the ionized gaseous Ar, and a thin film is formed on the surface of the substrate 12. In this case, the vertical electric field formed on the surface of the target 3 and the magnetic field due to the movable magnet 1 on the outside of the chamber 8 are orthogonally crossed, the film depositing rate by the target material is increased by the electron cyclotron movement, the attack of the target 3 due to the direct hitting of the gaseous Ar ion is not localized, hence the service efficiency of the target is increased, and the target can be used for a long time.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for forming thin films by sputtering.

Prior Art A conventional sputtering apparatus was constructed as shown in FIG.

Hereinafter, a conventional sputtering apparatus will be explained with reference to FIG. 24 is a cathode body for fixing the magnet 21 and yoke 22, 23 is a target, 25 is a plasma shield, 2e is a cooling water inlet for cooling the target 23, and 27 is a cooling water outlet. 28 is a chamber that supports the cathode body 24 and the substrate holder 31.

Further, 32 is a substrate on which a film is formed by sputtering, and is mounted on the substrate holder 31. 33 shows the erosion shape when the target 23 is sputtered.

FIG. 7 is a view of the magnet 21 viewed from the direction of arrow A in FIG.

The operation will be explained below. The inside of the chamber 28 is evacuated to a degree of vacuum on the order of 10 Torr using a vacuum pump. After that, introduce argon gas and
Torr, and a DC or RF voltage is applied to the cathode body 24 by the power supply 29. As a result, plasma is generated within the chamber 28. Argon ions are present in this plasma. In addition, the magnet 21
The magnetic field 30 generates a region with high plasma density, and the amount of argon ions colliding with the target 23 increases, resulting in high-speed film formation on the substrate 32.

Problems to be Solved by the Invention When forming a thin film on this cathode, the erosion of the target 23 becomes locally severe as shown in the erosion shape 33 shown in FIG. It becomes. Therefore, this becomes a very serious problem when the target 23 is expensive or when used in production.

Therefore, an object of the present invention is to improve the utilization efficiency of the target by devising the configuration of the cathode section.

Means for Solving the Problems In order to solve the above-mentioned problems, the sputtering apparatus of the present invention disposes a magnet outside the cathode body, supports the magnet so that it can be moved by a moving body, and supports the moving body. The magnet is driven to move at an appropriate speed.

For production The effect of this technical means is as follows.

In other words, by installing a magnet on a moving body and making it driveable, the part of the target with high plasma density, that is, the target eroded part, moves moment by moment to obtain a uniform eroded shape, which improves target usage efficiency. will improve.

EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3.

FIGS. 1 and 2 show a cross section of a sputtering apparatus in an embodiment of the present invention. Further, FIG. 3 shows the magnet when viewed from the direction of arrow A in FIG. 1. In FIGS. 1 and 2, 1 is a magnet that generates a parallel magnetic field on the surface of the target 3, and 2 is a yoke that is integrated with the magnet 1 using an adhesive.

4 is a cathode body for mounting the target 3, and 6 is a plasma shield. The magnet 1 and yoke 2 are placed on an endless belt T, and the belt 7 is configured to be driven by a motor 10 via a pulley 6 as well. Reference numeral 9 denotes a power source for applying RF or DC voltage to the cathode body 4. 8 is a chamber for supporting the cathode body 4 and the substrate holder 11. 1
Reference numeral 2 denotes a substrate on which a film is formed by sputtering, and is mounted on a substrate holder 11.

The operation of the cathode portion of the sputtering apparatus configured as described above will be explained. By applying a voltage to the target 3, an electric field is applied perpendicularly to the surface of the target 3, perpendicular to the magnetic field generated by the magnet 1, and causes electron cyclotron motion. Therefore, the plasma density in that part increases and the film deposition rate increases. Here, the motor 10 passes the belt 7 through the pulley 6.
to drive. Accordingly, the magnet 1 moves in one direction, and the part where the plasma density is high, that is, the part where the target 3 is expected to be severely eroded, moves. Therefore, the target 3 will be eroded more uniformly than when using a conventional cathode structure.

Note that the shape of the magnet 1 may be as shown in FIGS. 4 and 6. Further, the magnet 1 may be driven by a chain instead of the belt 7.

Effects of the Invention As described above, in the sputtering apparatus of the present invention, the cathode magnet is disposed outside the cathode body and is movable by the movable body, so that the efficiency of target utilization can be improved.

Therefore, in the case of mass production where the target price has a large effect on the cost, productivity can be improved by improving utilization efficiency.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional front view of a sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a longitudinal sectional side view thereof, FIG. 6 is a plan view similar to FIG. 3 showing another structure of the magnet, FIG. 6 is a longitudinal sectional front view of the conventional example, and FIG. 7 is a plan view of the magnet viewed from direction A in FIG. 6. 1...Magnet, 3...Target, 4.
...Cathode body, 7...Belt, 8.
...Chamber, 12...Substrate. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 3
Figure 4 Figure 5 Figure 6

Claims (1)

[Claims] A sputtering apparatus characterized in that a substrate on which a film is formed by sputtering and a cathode body equipped with a target are supported in a chamber, a magnet is disposed outside the cathode body, and the cathode body is movably supported by a moving body. .