JPS63164468A - Photo thyristor - Google Patents
Photo thyristorInfo
- Publication number
- JPS63164468A JPS63164468A JP61312406A JP31240686A JPS63164468A JP S63164468 A JPS63164468 A JP S63164468A JP 61312406 A JP61312406 A JP 61312406A JP 31240686 A JP31240686 A JP 31240686A JP S63164468 A JPS63164468 A JP S63164468A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- auxiliary
- main
- emitter layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は増幅ゲート構造を有する光サイリスタに関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical thyristor having an amplification gate structure.
光サイリスタの大口径化が進むにつれて電流の均等な広
がり方が悪くなるので、ターンオン時の主電流の広がり
が主エミッタ層に均等に早く広がるように、主エミッタ
部に補助エミッタ部が放射状に広がった増幅ゲート構造
を備えたものが知られている。第３図は光サイリスタの
断面図で、順次導電型を異にするｐ型エミッタ層１、ｎ
型ベースｒ＠２、ｐ型ベース層３、ｎ型エミッタ層４を
有する半導体素子の表面において、光トリガ感度を高め
るために凹状に加工された光照射領域５とカソード端子
Ｋに接続されるカソード電極６と接触する主エミッタＦ
ｉｉ４との間にｎ型の補助エミッタｆｉｉ７．８が設け
られ、これらの補助エミッタ層７゜８はｐ型ベース屓３
と短絡する補助カソード電極９．１０と接触している。As the optical thyristor becomes larger in diameter, the uniform spread of the current becomes worse. Therefore, in order to spread the main current evenly and quickly during turn-on to the main emitter layer, the auxiliary emitter part is spread radially around the main emitter part. Some devices are known that have an amplification gate structure. Figure 3 is a cross-sectional view of an optical thyristor, with p-type emitter layers 1, n-type emitter layers having different conductivity types in sequence.
On the surface of a semiconductor element having a type base r@2, a p-type base layer 3, and an n-type emitter layer 4, a cathode is connected to a light irradiation region 5 processed into a concave shape to increase light trigger sensitivity and a cathode terminal K. Main emitter F in contact with electrode 6
An n-type auxiliary emitter fii7.8 is provided between the auxiliary emitter layer 7.8 and the p-type base layer 3.
It is in contact with the auxiliary cathode electrode 9.10 which is short-circuited with the auxiliary cathode electrode 9.10.
このような光サイリスタは口径が大きくなるほど、ター
ンオン時、主エミッタ層周辺部まで増幅されたゲート電
流が均等にかつ早く広がる必要性があるので、第４図の
カソードパターンに示すように補助エミッタ層を主エミ
ッタ層周辺にまで広げている。すなわち、補助エミッタ
層８は光照射領域５を取り囲む同心円状の部分８−１と
、それから四方に延びる部分８−２と、それに交差して
主エミッタＷＩ４の周辺部に存在する部分８−３とから
構成される装置このように広げられた補助エミッタがす
べての部分で有効に働くためには、補助エミッタ層上の
電極を増幅されたゲート電流がずぺての補助エミッタ上
で主エミッタに均等に供給されなければならない。しか
しながら、この補助エミッタ層上の電極には本質的にそ
れ自身の抵抗があり、ゲート部近傍から流れ込む増幅さ
れたゲート電流が補助エミッタ周辺部まで流れるうちに
、電極による電位降下が発生して、ゲート部近傍にのみ
有効に増幅されたゲート電流が流れ込み、この部分が先
に点弧してしまい、周辺部にまで延ばした補助エミッタ
がその役割を果たさないという問題点があった。The larger the diameter of such an optical thyristor, the more quickly the amplified gate current needs to spread to the periphery of the main emitter layer during turn-on. extends to the vicinity of the main emitter layer. That is, the auxiliary emitter layer 8 has a concentric portion 8-1 surrounding the light irradiation area 5, a portion 8-2 extending in all directions from the concentric portion 8-1, and a portion 8-3 that intersects with the concentric portion 8-2 and is present at the periphery of the main emitter WI4. In order for the auxiliary emitter thus widened to work effectively in all parts, the amplified gate current must flow through the electrodes on the auxiliary emitter layer equally to the main emitter. must be supplied. However, the electrode on this auxiliary emitter layer essentially has its own resistance, and as the amplified gate current flowing from the vicinity of the gate flows to the periphery of the auxiliary emitter, a potential drop occurs due to the electrode. There is a problem in that the effectively amplified gate current flows only into the vicinity of the gate portion, causing this portion to fire first, and the auxiliary emitter extending to the periphery does not play its role.
本発明は、光サイリスタの光照射領域下の中央ｐｎ接合
部近傍に発生した電子・正孔対すなわち励起電流を有効
に利用して、大口径の光サイリスタの主エミッタ周辺部
まで均等に、速く点弧させることのできる補助エミッタ
構造を得ることを目的とする。The present invention effectively utilizes electron-hole pairs, that is, excitation current, generated near the central pn junction under the light irradiation area of the optical thyristor, and uniformly and quickly reaches the periphery of the main emitter of a large-diameter optical thyristor. The aim is to obtain an auxiliary emitter structure that can be ignited.
〔問題点を解決するための手段〕
この目的は本発明によれば、光照射領域を囲む補助エミ
ッタ層と主エミッタ層との間の表面に露出するベース層
に凹部を設け、この凹部を光照射領域に近い部分は深く
、主サイリスタ周辺に近づくほど浅くすることにより達
成される。[Means for Solving the Problem] According to the present invention, a recess is provided in the base layer exposed on the surface between the auxiliary emitter layer surrounding the light irradiation area and the main emitter layer, and the recess is exposed to light. This is achieved by making the area deeper near the irradiation area and shallower closer to the main thyristor.
本発明においては、補助エミッタ部と主エミッタ部との
間の抵抗が、両者間のベース層に設けられる凹部の深さ
の相違により、ゲート部近傍では大きく、主エミッタ周
辺部に近付くほど小さくなり、補助エミッタ層にほぼ均
等に増幅されたゲート電流が流れ出し、主サイリスタの
全面を同時に点弧させる。In the present invention, the resistance between the auxiliary emitter section and the main emitter section is large near the gate section and becomes smaller as it approaches the periphery of the main emitter due to the difference in the depth of the recess provided in the base layer between them. , an almost uniformly amplified gate current flows into the auxiliary emitter layer, causing the entire surface of the main thyristor to fire simultaneously.
次に本発明の実施例を図面について説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の実施例の断面図、第２図はそのカソー
ドパターンを示す平面図であり、第３図、第４図と同等
部分には同符号を付しである。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a plan view showing a cathode pattern thereof. Parts equivalent to those in FIGS. 3 and 4 are given the same reference numerals.
本発明においては、補助エミッタＩｗ８と主エミッタ層
４との間の表面に露出するベース層３に、主エミッタ層
４に隣接して凹部１１が形成される。In the present invention, a recess 11 is formed adjacent to the main emitter layer 4 in the base layer 3 exposed on the surface between the auxiliary emitter Iw8 and the main emitter layer 4.
この凹部１１は、補助エミッタ層と主エミッタ層との間
の表面に露出したベース層を、周辺部にある補助エミッ
タ１ｉ８−３の両端部分に相当する第１領域１２、補助
エミッタ層８−３の中央部分から補助エミ７りＮ８−２
にまたがる第２領域１３、補助エミッタ層８−２の残る
部分から補助エミッタ！１ｉ８−１に至る第３領域１４
の順にエツチング等により独立に深さを制御して次第に
深く形成し例えば領域１２の深さは１０ｕｍ、領域１３
の深さは２０μｍ、領域１４の深さは２５μｍとする。This concave portion 11 extends between the base layer exposed on the surface between the auxiliary emitter layer and the main emitter layer, and a first region 12 corresponding to both end portions of the auxiliary emitter 1i8-3 in the peripheral portion, and the auxiliary emitter layer 8-3. Auxiliary emitter 7 from the center part of N8-2
From the remaining portion of the auxiliary emitter layer 8-2, the second region 13 spans the auxiliary emitter! Third area 14 leading to 1i8-1
For example, the depth of region 12 is 10 um, the depth of region 13 is
The depth of the region 14 is 20 μm, and the depth of the region 14 is 25 μm.
このようにベース層に形成する凹部の深さを変えること
により、領域１４のゲート部近傍では補助エミッタ部と
主エミッタ部との間の抵抗は大きくなり、領域１３、領
域１２と主エミッタ周辺部に近づくほど補助エミッタ部
と主エミッタ部との間の抵抗は小さくなる。したがって
ターンオン時には主エミッタ周辺部に延びた補助エミッ
タ層にほぼ均等に増幅されたゲート電流が流れ出し、サ
イリスタの全面にわたってすばやく同時に点弧が行われ
る。By changing the depth of the recess formed in the base layer in this way, the resistance between the auxiliary emitter section and the main emitter section increases in the vicinity of the gate section of region 14, and the resistance between the auxiliary emitter section and the main emitter section increases in the vicinity of the gate section of region 14. The resistance between the auxiliary emitter section and the main emitter section becomes smaller as it approaches . Therefore, at turn-on, an almost uniformly amplified gate current flows into the auxiliary emitter layer extending around the main emitter, and ignition occurs quickly and simultaneously over the entire surface of the thyristor.
本発明によれば、主エミッタ層と補助エミッタ層との間
の表面に露出するベース層に主エミッタ層に隣接して凹
部を設け、しかもその深さを主エミッタ層周辺に近づく
ほど浅くすることにより、補助エミッタ部と主エミッタ
部とのｒｕｌの抵抗を主エミッタ層周辺に近づくほど小
さくしたものであり、常に補助エミッタ電極から主エミ
ッタ層へ増幅されたゲート電流が同時に等しく供給され
、ターンオン特性を向上させることができ、しかも凹部
の形成はエツチング操作のみで行えるから光点弧感度に
影響を与えることは全くない。According to the present invention, a recess is provided adjacent to the main emitter layer in the base layer exposed on the surface between the main emitter layer and the auxiliary emitter layer, and the depth of the recess is made shallower as it approaches the periphery of the main emitter layer. As a result, the resistance of rul between the auxiliary emitter section and the main emitter section is made smaller as it gets closer to the periphery of the main emitter layer, and the amplified gate current is always equally supplied from the auxiliary emitter electrode to the main emitter layer at the same time, improving the turn-on characteristics. Moreover, since the recesses can be formed only by etching, the light ignition sensitivity is not affected at all.
【図面の簡単な説明】
第１図は本発明の実施例の断面図、第２図はそのカソー
ドパターンの平面図、第３図は従来の光サイリスタの断
面図、第４図はそのカソードパターンの平面図である。
１・・・ｐ型エミッタ層、 ２・・・ｎ型ベース層、
３・・・ｐ型ベース層、 ４・・・ｎ型エミッタ層（
主エミッタ層）、 ５・・・光照射領域、 ６・・・カ
ソード電極、 ７・・・補助エミッタ層、 ８．８
−１．８−２．８−３・・・補助エミッタ層、 ９・・
・補助カソード電極、 １０・・・補助カソード電極
、 １１・・・凹部。
（６１１８）代理人弁理士冨村 涼 軌！
′□
′１、・、シ、”
第１図
Ｐ型穴ヅ眉
第２図
第３図
手続補正書
昭和６２年 １月２２日
２、発明の名称 光サイリスタ
３、補正をする者
事件との関係 特許出願人
住 所 川崎市川崎区田辺新田１番１号名 称 （５２
３）富士電機株式会社
４、代理人吊１１２
住 所 東京都文京区大塚４−１６−１２５、補正命令
の日付 なし
６、補正により増加する発明の数 なし７、補正の対
象 図面、第１図および第３図８、補正の内容
第１図
Ｉ Ｐ”ｒ！Ｌミツツ層
第３図[Brief Description of the Drawings] Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2 is a plan view of its cathode pattern, Fig. 3 is a sectional view of a conventional optical thyristor, and Fig. 4 is its cathode pattern. FIG. 1...p-type emitter layer, 2...n-type base layer,
3...p-type base layer, 4...n-type emitter layer (
main emitter layer), 5... light irradiation area, 6... cathode electrode, 7... auxiliary emitter layer, 8.8
-1.8-2.8-3...Auxiliary emitter layer, 9...
- Auxiliary cathode electrode, 10... Auxiliary cathode electrode, 11... Recessed part. (6118) Attorney Ryo Tomimura!
'□ '1,..., shi,'' Figure 1: P-type hole, eyebrows, Figure 3, procedural amendment document, January 22, 1982. Related Patent Applicant Address 1-1 Tanabeshinden, Kawasaki-ku, Kawasaki City Name (52
3) Fuji Electric Co., Ltd. 4, Agent Sui 112 Address 4-16-125 Otsuka, Bunkyo-ku, Tokyo Date of amendment order None 6 Number of inventions increased by amendment None 7 Subject of amendment Drawing, Figure 1 and Fig. 3 8, Contents of correction Fig. 1 I P”r!L Mitsutsu layer Fig. 3
Claims (1)
助エミッタ層と主エミッタ層との間の表面に露出するベ
ース層に凹部を設け、その凹部の深さをゲート部近傍か
ら主エミッタ層周辺部にかけて次第に浅くしたことを特
徴とする光サイリスタ。1) In an optical thyristor having an amplification gate structure, a recess is provided in the base layer exposed on the surface between the auxiliary emitter layer and the main emitter layer, and the depth of the recess is gradually increased from the vicinity of the gate part to the peripheral part of the main emitter layer. An optical thyristor characterized by its shallow depth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61312406A JPS63164468A (en) | 1986-12-26 | 1986-12-26 | Photo thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61312406A JPS63164468A (en) | 1986-12-26 | 1986-12-26 | Photo thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63164468A true JPS63164468A (en) | 1988-07-07 |
Family
ID=18028848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61312406A Pending JPS63164468A (en) | 1986-12-26 | 1986-12-26 | Photo thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63164468A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615785A (en) * | 2018-05-03 | 2018-10-02 | 电子科技大学 | A kind of photo thyristor with depth N+ hole currents barrier layer |
-
1986
- 1986-12-26 JP JP61312406A patent/JPS63164468A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615785A (en) * | 2018-05-03 | 2018-10-02 | 电子科技大学 | A kind of photo thyristor with depth N+ hole currents barrier layer |
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