JPS63164268A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS63164268A JPS63164268A JP61308271A JP30827186A JPS63164268A JP S63164268 A JPS63164268 A JP S63164268A JP 61308271 A JP61308271 A JP 61308271A JP 30827186 A JP30827186 A JP 30827186A JP S63164268 A JPS63164268 A JP S63164268A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- film
- transparent
- transparent electrodes
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims 5
- 238000002161 passivation Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000012216 screening Methods 0.000 abstract 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 208000033897 Systemic primary carnitine deficiency Diseases 0.000 description 2
- 238000001467 acupuncture Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 208000016505 systemic primary carnitine deficiency disease Diseases 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000021110 pickles Nutrition 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （オ業上の利用分野） 本発明は固体ＪＡ ＩＩ獲ｔの構造曇こ関する。[Detailed description of the invention] [Purpose of the invention] (Field of industrial use) The present invention relates to a structural cloud of solid JA II.
（従来の技術）
光導鑞膜槓ｒ一櫨固体轍隊装菫に８いて光導電膜上ｏ透
明１ｉ！ｌｃｄ通常Ｉ Ｔ Ｏ （ Ｉｎｄｉｎｍ Ｔ
ｉｎ Ｏｘｉｄｅ）を用いているが，ＩＴＯはその化学
的清合が安定ではないため、通常の半４体猥置上に形成
されるバｙ シヘ− ’／ ａ ７膜であるＰ − Ｓ
ｉＮ（ Ｐｌａｓｍｃ−ｄｉｌｉｃｏｎ Ｎｉｔｒｉ
ｄｅ）を形成する際にＩ’ｒＯが変質し、その抵抗が変
化するあるいはＩ ’ＩＩ’ ０ １ｉが白濁するとい
う間：直があり、ＩＴＯ上にはＰ−８ｉＮによるパツシ
ベーシヨン膜が形成できなかった。(Prior art) A photoconductive film is placed on the photoconductive film and a transparent film is placed on the solid track. lcd normal IT
However, since the chemical composition of ITO is not stable, it is difficult to use P-S, which is a by-shihe-'/a7 film formed on a normal hemi-4 body.
iN( Plasmc-dilicon Nitri
de) During the formation of ITO, I'rO changes in quality and its resistance changes or I'II'01i becomes cloudy.Therefore, a passivation film of P-8iN cannot be formed on ITO. Ta.
そのため積１ｍｍ．固本撮暉Ａ一の信頼性が低下する３
それがありた。Therefore, the area is 1mm. Reliability of solid book photography A1 decreases 3
There it was.
また固本撮鍼装置の持回の電装なファクターであるプル
ーミング待６ｚよびスミアー持注の向上のためには透明
鑞颯上の画素分胤屓戒に光シールド１を形成するガムが
あるがＩＴＯは１咳等の『亥により容易にエツチングさ
れてしまうため光シールド１材料には、ＩＴＯをエツチ
ングしない方法でエツチングされるより材料でなければ
ならないなど制約がありた。In addition, in order to improve pluming and smearing, which are electrical factors of the fixed acupuncture device, there is a gum that forms a light shield 1 in the pixel division on the transparent acupuncture plate, but ITO is used. Since ITO is easily etched by ITO and other insects, there were restrictions on the material used for the light shield 1, such as it had to be a material that could be etched by a method that did not etch ITO.
（発明が解決しようとする間恒点）
本発明は光導４ ｌｌＩ！上の透明鑞嘱上にＰ −８Ｉ
Ｎからなるパッシベーション膜を形成する：奈に、透明
ｔｔ極の抵抗の変化３よび透明１１侃の白濁等が発生す
ることがなく、な３かつ透明１１Ｌ極上に形成する光シ
ールド層の材料の１択範囲の広い光４１！幌、漬を型固
体撮１逮裏改を提供することを目的とする。(Standard point while the invention is trying to solve) The present invention is a light guide 4 llI! P-8I on the upper transparent layer
Forming a passivation film made of N: does not cause any change in the resistance of the transparent tt electrode or clouding of the transparent 11 layer; 41 lights with a wide range of choices! The purpose is to provide a solid-state camera with a hood and a pickle.
（１閏４点を解決するための手段）
本発明は、半４本店板上に形成した信号電荷読み出し部
と、これにｆＪ場した光４４晩からなる光４成膜、債層
型固本撤１象猥電に８いて光導鑞嗅上の透明電極を、半
悸Ｉ＊基板調に形成された低抵抗透明電極と、この上に
積層形成された強耐酸性かつ抵抗特昧の安定性の高い透
明１！Ｌ極の積１溝造とすることにより、透明１鴎上に
Ｐ−８ｉＮからなるパッシベーション膜を形成すること
を可能とし装置の信頼性を向上することを可能としまた
透明ｇ極上に形成する元シールド鳴材料の選択範囲を広
げる。(Means for solving the problem of 4 points per leap) The present invention consists of a signal charge readout section formed on a semi-conductor board, and an optical 4 film formation process consisting of 44 nights of fJ field light applied to this. A transparent electrode on the optical conductor is used as a transparent electrode on the 1st image, a low-resistance transparent electrode formed like a semi-transparent I* substrate, and a layered layer on top of this provides strong acid resistance and resistance-specific stability. High transparency 1! By forming the L-pole in one groove, it is possible to form a passivation film made of P-8iN on the transparent electrode, improving the reliability of the device. Expand the selection range of shield sounding materials.
（作用）
本発明の構造では、光導ｇ幌上の透明成極を半導体屑板
側に形成されたＩＩ！−抵抗透明１唯と、この上に積１
形成された強耐酸性かつ抵抗特注の安定性の高い透明￥
！Ｌ極の積１ａ構造とするために、光導４膜上の透明１
颯上にｉ’−３ｉＮからなるパッシベーション膜を形成
しても、透明電極の抵抗の変化Ｂよび透明鑞】の白濁が
発生せず左置の信・４８：を向上することがＯＴ能とな
る。(Function) In the structure of the present invention, the transparent polarization on the light guide g hood is formed on the semiconductor scrap board side! -Resistance transparent 1 layer and layered layer 1 on top of this
Strongly acid resistant and resistant custom-made highly stable transparent material
! In order to obtain the L-pole product 1a structure, the transparent 1 on the light guide 4 film is
Even if a passivation film made of i'-3iN is formed on the surface, the change in resistance of the transparent electrode and the clouding of the transparent solder do not occur, and the OT performance improves the reliability of the transparent electrode. .
また表面側に強耐酸性の透明′４！富が積層形成されて
いるために、透明電極上に形成する光シールド＋４材料
の選択範囲が広がる。In addition, the surface side is highly acid-resistant and transparent! The layered structure expands the range of choices for light shield +4 materials to be formed on the transparent electrode.
（失権列）
本発明の実施レリを図面を用いて説明する。図は本発明
の一実Ｊ！Ａ例であり、信号電荷読み出し部にインｐ−
ライン転送ＣＣＤ （Ｉｎｔｅｒｌｉｎｅ Ｔｒａｎｓ
ｆｅｒＣＣＤ：以後ＩＴ−ＣＣＤと呼ぶ）を用いた積１
観固本盪鷹瑛置の１造説明図である。(Forfeiture sequence) The implementation of the present invention will be explained using the drawings. The figure is one of the fruits of this invention! This is example A, and the input p-
Line transfer CCD (Interline Trans
Product 1 using ferCCD (hereinafter referred to as IT-CCD)
This is an explanatory drawing of the Kangohon-Takaeki.
これを・製造工程に沿って説明すれば、ｐ型半導体、に
板１１）上に鳶子分雅領峨１）＋１１１２）、垂直ＣＯ
Ｄチャネルｎ ｆｉｌｌ １３） ｊｄよびｓ項ダイ
オ−）” ｎ ” ％（４）を形成する。そして、この
半導体基板上にゲート絶縁１を介して重置ｅｅＤｏ転送
グート電他（５第１）（５−２）を形成する。次にこの
上に絶縁！ｆｉ ＋６１を設けた後に画′ｔ４屯礪配線
（７）と蓄積ダイオードｎ ’ＴＨ４）の４気的導
西のためのコンタクトホールを形成する。To explain this along the manufacturing process, a p-type semiconductor, a vertical CO
D-channel n fill 13) Form jd and s-term diode)"n"% (4). Then, overlapping eeDo transfer Gut et al. (5 1st) (5-2) is formed on this semiconductor substrate via the gate insulator 1. Next, insulate on top of this! After providing fi +61, a contact hole is formed for the electrical conduction of the wiring (7) and the storage diode n'TH4).
そして画素胤１配り１７）を設けた後に畏面形状を千坦
比する目的で絶縁＃Ｉ８） （Ｓ ｉｏｔ、ポリイミド
停）を設け、さらＥこ一講屯極（９）を形成する。その
後、九１！変換を行なう光導１！俣として、たとえばａ
−Ｓ ｉ （ａｍｏｒｐｈｏｕｓ−８ｉ１１ｃｍ）ｌ
ｉｄ （ｌのを全面に形成し、最後に光導４！（１の上
にＩ Ｔ Ｏ（Ｉｎｄｉｎｍ ＴｉｎＯｘ ｉ ｄ ｅ
）等によるＭｌの透明！甑（１１）を搬り′象領域全面
Ｅζ形成した後、さらに８ｉ０．等憂ζよる第２の透明
鑞甑（【２）を撮滓頭域全面に積層形成する。Then, after providing the pixel seed 1 distribution 17), an insulation #I8) (Siot, polyimide stop) is provided for the purpose of making the surface shape uniform, and then an E-coupled electrode (9) is formed. After that, 91! Light guide that performs conversion 1! For example, a
-S i (amorphous-8i11cm)l
id (I) is formed on the entire surface, and finally I T O (Indim TinOx i d e
), etc. Transparency of Ml! After carrying the pot (11) and forming the entire surface area Eζ, 8i0. A second transparent glaze ([2) made of ζ] is laminated over the entire head area of the head to be photographed.
図の構成により光導ａＩＪ積層型固体ｆｌ＆ （ＩＪ装
置としての機能を得ること６どなるが、プルーミング特
注８よびスミア−特注を向上するための光シールド１ｉ
（Ｃｒ嗅）（１３）および暗時出力信号レベルを得るた
めのオプティカルブラック（１７）上の光シールド（ｅ
ｒ嗅） （１４）を形成し、さらに信頼性向上のＰ（Ｐ
ｌａｓｍａ ＣＶＤ） −３ＩＮ等によるパｔ ’ｉ
ヘ−シ！１ン［（１５）を例えばＣｒ１Ｉを硝酸第２セ
リウムアンモニウム、過塩素酸と水との混液でパターニ
ングし、形成することでより実用レベルに近い構造の光
導′ＩＬ膜積嗜型固本撮渫猥喧を得る。Ｐ−８ｉＮ換の
成模Ｌｆｉ減圧下、ｅ（ｉＨ４第１−ＮＨ，ガス、２０
０℃で行なった。With the configuration shown in the figure, the light guide aIJ stacked solid state fl&
(Cr) (13) and a light shield (e) on the optical black (17) to obtain the dark output signal level.
r smell) (14), and further improves reliability by forming P (P
lasma CVD) - Pat 'i by 3IN etc.
Heesh! For example, by patterning Cr1I with a mixture of ceric ammonium nitrate, perchloric acid, and water, a light guide with a structure closer to a practical level can be produced. Obtain obscenity. Simulation Lfi of P-8iN exchange under reduced pressure, e(iH4 1st-NH, gas, 20
It was carried out at 0°C.
図の構造に２いては第１の透明！ ＋返（１１）上に、
高耐酸性かつ抵洸′！＃曲の安定性の高い第２の透明ｔ
Ｊｔｔｔ（１２）が積層形成されているためＰ−８ｉＨ
によるパッシベーション膜（１５）を杉成す６ ＶＡに
透明１極の抵抗の変化および透明１隠の白濁等は起こら
ない上に、光シールド；醤（１３）（１４）のパターン
形成時に４２の透明ａｌｌ（１２）がエツチングされて
しまうことがないため、光シールド＊ （ｔ３）（ｔ４
）の材料ＯＡ択範囲が広が９、その製造工程を容易とす
ることができる。The structure in the figure is the first transparent one! + On return (11),
High acid resistance and resistance! #Second transparent t with high song stability
P-8iH because Jttt (12) is formed in a layered manner.
Forming a passivation film (15) with 6 VA does not cause any change in the resistance of the transparent 1 pole or clouding of the transparent 1 pole, and is a light shield; (12) is not etched, so the light shield* (t3) (t4
), the range of material OA options is widened9, and the manufacturing process can be made easier.
以上の説明に２いては信号電荷読み出し部憂こＩＴ−Ｃ
ＣＤを用いたが例えばＸ−ＹアドレスｑＭＯ８゜ライン
アトｌ／Ｘ型Ｃｋ’ Ｄ （Ｃｈａｒｇｅ Ｐｒｉｍｉ
ｎｇ Ｄｅｖｉｃｅ入ｒｔ Ｒ掃き寄せ素子Ｉ： ８
Ｄ （Ｃｈａｒｇｅ Ｓｗｅｅｐ Ｄｅｖｌｃｅ）その
池の信号読み出しができるものであれば本発明力！Ｉａ
用できる。2 In the above explanation, the signal charge readout section Uiko IT-C
Although a CD was used, for example, X-Y address qMO8° line at l/X type Ck' D (Charge Prim
ng Device input rt R sweep element I: 8
D (Charge Sweep Devlce) If it is possible to read out the signal of the pond, it is an invention! Ia
Can be used.
また、以上■説明では光導電膜としてａ−８１嗅ｆ：
ｉ４ イタ７り（、例えば５ｅ−Ａｓ−Ｔｅ、Ｚｎ５ｅ
−ＺｎｅｄＴｅなどで代及されるｊｔ４４’４を利用す
ることができる。In addition, in the above ■ explanation, the photoconductive film is a-81 f:
i4 Ita7ri (, e.g. 5e-As-Te, Zn5e
- jt44'4 referred to in ZnedTe etc. can be used.
さらに、以上の説明ではＣＵＤをＮチャネルとして説明
したがＰチャネル或ＣＵＤに８いても本発明は適用でき
る。Further, in the above explanation, the CUD is assumed to have N channels, but the present invention can be applied even if there are 8 P channels or CUDs.
［清明の効果］
本発明によれば、光導＆！俟上の透明框應の低流（化２
よび白濁等が発生することな（、１’−３ｉＮ４０パツ
ジペ一ジａ７１１ｇを形成することができるため、信須
曲の高い光導ル膜積唱型固本撮）衆装置を得ることがで
きる。[Effect of clear light] According to the present invention, light guiding &! Low flow of transparent stile on the tower (Case 2
It is possible to obtain a device that does not cause white clouding or the like (because it is possible to form a 1'-3iN40 page a711g, it is possible to obtain a light guide film stacking type fixed-book camera with a high degree of brightness).
また、光シールド１材料の選択範囲が広がるため製造工
程を容易な工程にすることができる。Furthermore, since the selection range of materials for the optical shield 1 is expanded, the manufacturing process can be simplified.
図は本発明の一実施例を説明するための断面ｌＩｌ造図
である。
１・・・Ｐ戚半導体基板、２・・・素子頭・碓領域ｐ＋
１．３・・・垂直Ｃ（、’ＤチャネルＮ＋層、４・・・
蓄ｆλダイオードＮ＋＋９，５第１．５−２・・・垂直
ＣＣＤ転をデート＃を甑、６・・・絶縁第１７・・・画
素電極配線、８・・・乎旦比１．９・・・画素＆龜、１
０・・・光導電膜、１１・・・第１の透明ＩＬ鴎、１２
・・・第２の透明鑞礪、１３．１４・・・元シールド１
（２）、１５・・・パッシベーション膜、１６・・・Ｍ
効撮濾画素部、１７・・・オグティカルブラック。The figure is a cross-sectional diagram for explaining one embodiment of the present invention. 1...P-related semiconductor substrate, 2...Element head/usu region p+
1.3...Vertical C(, 'D channel N+ layer, 4...
Storage fλ diode N++9,5 1.5-2...Date # for vertical CCD rotation, 6...Insulation 17...Pixel electrode wiring, 8...Ratio 1.9...・Pixel & head, 1
0... Photoconductive film, 11... First transparent IL seagull, 12
...Second Transparent Warehouse, 13.14...Original Shield 1
(2), 15...passivation film, 16...M
Effect filter pixel section, 17...Ogtical black.
Claims (4)
これに積層した光導電膜からなる光導電膜積層型固体撮
像装置において、光導電膜上の透明電極が第１の透明電
極と第２の透明電極の積層構造であることを特徴とする
固体撮像装置。(1) A signal charge readout section formed on a semiconductor substrate,
A photoconductive film laminated solid-state imaging device comprising a photoconductive film laminated thereon, wherein the transparent electrode on the photoconductive film has a laminated structure of a first transparent electrode and a second transparent electrode. Device.
低抵抗透明電極であり、前記第２の透明電極は第１の透
明電極上に積層形成された強耐酸性かつ抵抗特性の安定
性の高い透明電極であることを特徴とする前記特許請求
の範囲第１項記載の固体撮像装置。(2) The first transparent electrode is a low resistance transparent electrode formed on the semiconductor substrate side, and the second transparent electrode is laminated on the first transparent electrode and has strong acid resistance and stable resistance characteristics. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is a highly transparent electrode.
ｎＯｘｉｄｅ）を用いた前記特許請求の範囲第２項記載
の固体撮像装置。(3) The first transparent electrode is made of ITO (IndiumTi).
3. The solid-state imaging device according to claim 2, which uses oxide (nOxide).
請求の範囲第３項記載の固体撮像装置。(4) The solid-state imaging device according to claim 3, which uses the second transparent electrode SnO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61308271A JPS63164268A (en) | 1986-12-26 | 1986-12-26 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61308271A JPS63164268A (en) | 1986-12-26 | 1986-12-26 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63164268A true JPS63164268A (en) | 1988-07-07 |
Family
ID=17979010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61308271A Pending JPS63164268A (en) | 1986-12-26 | 1986-12-26 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63164268A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011198854A (en) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | Photoelectric conversion film stack-type solid-state imaging device and imaging apparatus |
| JP2011198855A (en) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | Photoelectric conversion film stack-type solid-state imaging device and imaging apparatus |
-
1986
- 1986-12-26 JP JP61308271A patent/JPS63164268A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011198854A (en) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | Photoelectric conversion film stack-type solid-state imaging device and imaging apparatus |
| JP2011198855A (en) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | Photoelectric conversion film stack-type solid-state imaging device and imaging apparatus |
| US8659687B2 (en) | 2010-03-17 | 2014-02-25 | Fujifilm Corporation | Photoelectric conversion film stack-type solid-state imaging device and imaging apparatus |
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