JPS63164255U - - Google Patents
Info
- Publication number
- JPS63164255U JPS63164255U JP4366488U JP4366488U JPS63164255U JP S63164255 U JPS63164255 U JP S63164255U JP 4366488 U JP4366488 U JP 4366488U JP 4366488 U JP4366488 U JP 4366488U JP S63164255 U JPS63164255 U JP S63164255U
- Authority
- JP
- Japan
- Prior art keywords
- light
- gaas
- receiving device
- substrate
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
Description
第１図乃至第３図は従来の光結合素子構造を示
す側断面図、第４図は従来のメサ型構造をもつ発
光素子の断面図、第５図は本考案による発光素子
を作成するためのＧａＡｓ基板のエピタキシヤル
成長断面図、第６図は同ＧａＡｓ基板のバンドキ
ヤツプ図、第７図は本考案による光結合素子の一
実施例を示す側面図である。
２１：Ｎ＋−ＧａＡｓ基板、２２：Ｎ−ＧａＡ
ｓ，２３：Ｐ−ＧａＡｓ，２４：Ｐ−ＧａＡｌＡ
ｓ，２５，２６：電極、２７：受光素子、２９：
透明絶縁層。
1 to 3 are side sectional views showing the structure of a conventional optical coupling device, FIG. 4 is a sectional view of a conventional light emitting device having a mesa structure, and FIG. 5 is a diagram showing how to create a light emitting device according to the invention. FIG. 6 is a bandcap diagram of the GaAs substrate, and FIG. 7 is a side view showing an embodiment of the optical coupling device according to the present invention. 21: N + -GaAs substrate, 22: N-GaA
s, 23: P-GaAs, 24: P-GaAlA
s, 25, 26: electrode, 27: light receiving element, 29:
Transparent insulation layer.
Claims (1)
子において、前記発光素子及び受光素子間に透明
絶縁層を介在し、前記発光素子は、Ｎ＋−ＧａＡ
ｓ基板上に、厚さ１０μ以下のＮ−ＧａＡｓ，Ｐ
−ＧａＡｓ及びＰ−ＧａＡｌＡｓの液相エピタキ
シヤル成長によつて形成されたシングルヘテロ接
合を有しており、ｐ電極を前記液相エピタキシヤ
ル成長層上に形成するとともに、ｎ電極を前記液
相エピタキシヤル層をエツチングして露出させた
Ｎ＋−ＧａＡｓ基板上に形成し、前記Ｎ＋−Ｇａ
Ａｓ基板の電極が設けられていない側から前記透
明絶縁層を介して前記受光素子と光結合させたこ
とを特徴とする光結合素子。 In an optical coupling device formed by optically coupling a light emitting device and a light receiving device, a transparent insulating layer is interposed between the light emitting device and the light receiving device, and the light emitting device is made of N + -GaA.
N-GaAs, P with a thickness of 10μ or less on the s-substrate
- It has a single heterojunction formed by liquid phase epitaxial growth of GaAs and P-GaAlAs, with a p electrode formed on the liquid phase epitaxial growth layer and an n electrode formed on the liquid phase epitaxial growth layer. The N + -GaAs substrate is etched to expose the N + -GaAs substrate.
An optical coupling device characterized in that the light-receiving device is optically coupled to the light-receiving device from the side of the As substrate where no electrode is provided through the transparent insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4366488U JPS63164255U (en) | 1988-03-30 | 1988-03-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4366488U JPS63164255U (en) | 1988-03-30 | 1988-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63164255U true JPS63164255U (en) | 1988-10-26 |
Family
ID=30860737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4366488U Pending JPS63164255U (en) | 1988-03-30 | 1988-03-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63164255U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5098291A (en) * | 1973-12-26 | 1975-08-05 | ||
| JPS5184584A (en) * | 1975-01-22 | 1976-07-23 | Hitachi Ltd | HANDOTAI FUOTO KAPURA |
| JPS5539697A (en) * | 1978-09-15 | 1980-03-19 | Westinghouse Electric Corp | Semiconductor light device |
| JPS57112085A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Photocoupler |
-
1988
- 1988-03-30 JP JP4366488U patent/JPS63164255U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5098291A (en) * | 1973-12-26 | 1975-08-05 | ||
| JPS5184584A (en) * | 1975-01-22 | 1976-07-23 | Hitachi Ltd | HANDOTAI FUOTO KAPURA |
| JPS5539697A (en) * | 1978-09-15 | 1980-03-19 | Westinghouse Electric Corp | Semiconductor light device |
| JPS57112085A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Photocoupler |
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