JPS63161552A - Method and device for recording - Google Patents

Method and device for recording

Info

Publication number
JPS63161552A
JPS63161552A JP61309433A JP30943386A JPS63161552A JP S63161552 A JPS63161552 A JP S63161552A JP 61309433 A JP61309433 A JP 61309433A JP 30943386 A JP30943386 A JP 30943386A JP S63161552 A JPS63161552 A JP S63161552A
Authority
JP
Japan
Prior art keywords
recording
film
recording device
probe electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61309433A
Other languages
Japanese (ja)
Other versions
JP2556491B2 (en
Inventor
Takeshi Eguchi
健 江口
Harunori Kawada
河田 春紀
Kunihiro Sakai
酒井 邦裕
Hiroshi Matsuda
宏 松田
Yuuko Morikawa
森川 有子
Takashi Nakagiri
孝志 中桐
Takashi Hamamoto
浜本 敬
Masaki Kuribayashi
正樹 栗林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP61309433A priority Critical patent/JP2556491B2/en
Application filed by Canon Inc filed Critical Canon Inc
Priority to DE3752269T priority patent/DE3752269T2/en
Priority to EP93200793A priority patent/EP0551964B1/en
Priority to DE3789373T priority patent/DE3789373T2/en
Priority to EP87311397A priority patent/EP0272935B1/en
Priority to EP93200792A priority patent/EP0555941B1/en
Priority to DE3752180T priority patent/DE3752180T2/en
Priority to DE3752099T priority patent/DE3752099T2/en
Priority to EP93200797A priority patent/EP0551966B1/en
Publication of JPS63161552A publication Critical patent/JPS63161552A/en
Priority to US08/482,789 priority patent/US5623476A/en
Application granted granted Critical
Publication of JP2556491B2 publication Critical patent/JP2556491B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To attain high density recording by applying a voltage in excess of a threshold voltage causing an electric memory effect from a probe electrode to a recording medium having the electric memory effect. CONSTITUTION:The voltage in excess of a threshold voltage causing the electric memory effect is applied to a recording medium 1 having the electric memory effect from the probe electrode 102. That, is while an XY stage 114 is moved at a prescribed interval, a pulse voltage having a level of a threshold voltage is applied and the ON-state is written, a probe voltage for write is applied between the probe electrode 102 and an opposed electrode 103 to read directly the change in the current quantity flowing to the ON-state region and the OFF- state region or read it via a servo circuit 106. Thus, high density recording is attained.

Description

【発明の詳細な説明】 (技術分計) 本発明は記録装置に関するものである。[Detailed description of the invention] (Technical breakdown) The present invention relates to a recording device.

更に詳しくは一方をプローブ電極とした一対の電極間に
有機化合物の層構造を有し、電圧電流のスイッチング特
性に対してメモリ効果をもつ記録媒体を用いた記録装置
に関する。
More specifically, the present invention relates to a recording device using a recording medium that has a layered structure of an organic compound between a pair of electrodes, one of which is a probe electrode, and has a memory effect on voltage and current switching characteristics.

(背景技術〕 近年、メモリ材料の用途は、コンピュータおよびその関
連機器、ビデオディスク、ディジタルオーディオディス
ク等のエレクトロニクス産業の中核をなすものであり、
その材料開発も極めて活発に進んでいる。メモリ材料に
要求される性能は用途により異なるが、一般的には、■
高密度で記録容量が大きい、 ■記録再生の応答速度が速い、 ■消費電力が少ない、 ■生産性が高く、価格が安い、 等が挙げられる。
(Background Art) In recent years, the use of memory materials has become the core of the electronics industry, such as computers and related equipment, video disks, digital audio disks, etc.
The development of these materials is also progressing very actively. The performance required of memory materials varies depending on the application, but in general, ■
High density and large recording capacity; ■Fast response speed for recording and playback; ■Low power consumption; ■High productivity and low price.

従来までは磁性体や半導体を素材とした半導体メモリや
磁気メモリが主であったが、近年レーザー技術の進展に
ともない、有機色素、フォトポリマーなとの有機薄膜を
用いた光メモリによる安価で高密度な記録媒体が登場し
てきた。
Until now, semiconductor memory and magnetic memory were mainly made of magnetic materials and semiconductors, but with the recent advances in laser technology, inexpensive and high-density optical memory using organic thin films such as organic dyes and photopolymers has been developed. recording media have appeared.

一方、最近、導体の表面原子の電子構造を直接観察でき
る走査型トンネル顕微鏡(以後、STMと略す)が開発
され、 [G、Binning  et  al、、He1va
tica  Physica  Acta、55゜72
6 (1982)] 単結晶、非晶質を問わず実空間像の高い分解能が測定が
できるようになり、しかも媒体に電流による損傷を与え
ずに低電力で観測できる利点をも有し、さらに大気中で
も動作し、種々の材料に対して用いることができるため
広範囲な応用が期待されている。
On the other hand, recently, a scanning tunneling microscope (hereinafter abbreviated as STM) that can directly observe the electronic structure of surface atoms of a conductor has been developed.
tica Physica Acta, 55°72
6 (1982)] It has become possible to measure real space images with high resolution regardless of whether they are single crystal or amorphous, and it also has the advantage of being able to observe with low power without damaging the medium due to current. It is expected to have a wide range of applications because it can operate in the atmosphere and can be used with various materials.

STMは金属の探針と導電性物質の間に電圧を加えてl
nm程度の距離まで近づけるとトンネル電流が流れるこ
とを利用している。この電流は両者の距離変化に非常に
敏感であり、トンネル電流を一定に保つ上りに探針を走
査することにより実空間の表面構造を描くことができる
と同時に表面原子の全電子雲に関する種々の情報をも読
み取ることができる。STMを用いた解析は導電性試料
に限られるが、導電性材料の表面に非常に薄く形成され
た単分子膜の構造解析にも応用され始めており、個々の
有機分子の状態の違いを利用′した高密度記録の再生技
術としての応用も考えられる。
STM involves applying a voltage between a metal tip and a conductive material.
It takes advantage of the fact that a tunnel current flows when brought close to a distance of about nm. This current is very sensitive to changes in the distance between the two, and by scanning the probe upward while keeping the tunneling current constant, it is possible to draw the surface structure in real space and at the same time draw various information about the total electron cloud of surface atoms. Information can also be read. Analysis using STM is limited to conductive samples, but it is beginning to be applied to structural analysis of extremely thin monomolecular films formed on the surface of conductive materials, making use of differences in the states of individual organic molecules. It is also possible to consider application as a reproduction technology for high-density recording.

一方、従来、針状電極を用いて放電や通電によって潜像
を形成する方法は静電記録方法として知られており、記
録紙等への応用が数多くなされている(特開昭49−3
435号公報)。
On the other hand, the conventional method of forming a latent image by discharging or energizing using needle-shaped electrodes is known as an electrostatic recording method, and has been applied to many recording papers etc. (Japanese Patent Laid-Open No. 49-3
Publication No. 435).

この静電記録媒体に用いられる膜厚はμオーダーで、該
媒体上の潜像を電気的に読み取り再生した例はまだ報告
されていない。
The film thickness used in this electrostatic recording medium is on the μ order, and there have been no reports yet of an example in which a latent image on the medium is electrically read and reproduced.

また、一方1個の有機分子に論理素子やメモリ素子等の
機能を持たせた分子電子デバイスの提案が発表され、分
子電子デバイスの構築技術の一つとみられるラングミュ
ア−プロジェット膜(以下LB膜と略す)についての研
究も活発化している。LB膜は有機分子を規則正しく1
分子層ずつ積層したもので膜厚の制御は分子長の単位で
行うことができ、一様で均質な超薄膜を形成できる。こ
の特徴を十分に活かしたデバイス作成としてLB膜を絶
縁膜として使う多くの試みが行なわれてきている。例え
ば金属・絶縁体・金属(MIM)構造のトンネル接合素
子[G。
Meanwhile, a proposal for a molecular electronic device in which a single organic molecule has functions such as a logic element or a memory element was announced, and a Langmuir-Prodgett film (hereinafter referred to as LB film), which is considered to be one of the construction technologies for molecular electronic devices, was announced. Research on (abbreviated) is also becoming more active. The LB film arranges organic molecules in an orderly manner.
It is made by laminating molecular layers, and the film thickness can be controlled in units of molecular length, making it possible to form a uniform and homogeneous ultra-thin film. Many attempts have been made to use the LB film as an insulating film to create devices that take full advantage of this feature. For example, a tunnel junction element with a metal-insulator-metal (MIM) structure [G.

L、Larkins  at  al、、Th1nSo
lid  Films、99.(1983)]や金属・
絶縁体・半導体(MIS)構造に発光素子[G、G、R
oberts  et  at、。
L, Larkins at al, Th1nSo
lid Films, 99. (1983)] and metals.
Light emitting elements [G, G, R
oberts et at,.

Electronics  Letters。Electronics Letters.

20.489 (1984)]あるいはスイッチング素
子[N、J、Thomas  et  at、。
20.489 (1984)] or switching elements [N. J. Thomas et at.

Electronics  Letters。Electronics Letters.

l旦、838 (1984)]がある。これら一連の研
究によって素子特性の検討がされているが、未だ素子ご
との特性のバラツキ、経時変化など再現性と安定性の欠
如は未解決の問題として残った。
Idan, 838 (1984)]. Although device characteristics have been investigated through a series of these studies, the lack of reproducibility and stability, such as variations in characteristics between devices and changes over time, remain unsolved problems.

従来、上記の如き検討は取扱いが比較的容易な脂肪酸の
LB膜を中心に進められてきた。しかし最近、これまで
劣るとされていた耐熱性1機械強度に対してもこれを克
服した有機材料が次々に生まれている。我々はこれらの
材料を用いたLB膜を絶縁体として用いて再現性と安定
性に優れたMIM素子を作製すべく鋭意研究の結果、従
来になく薄く均一な色素絶縁膜を作製できるようになっ
た。また、その結果全く新しいメモリ機能を有するスイ
ッチング現象を発現するMIM素子をも発見するに至っ
ている。
Conventionally, the above studies have focused on fatty acid LB membranes, which are relatively easy to handle. However, recently, organic materials have been created one after another that overcome the heat resistance and mechanical strength, which were previously thought to be inferior. As a result of intensive research to create MIM devices with excellent reproducibility and stability using LB films made of these materials as insulators, we have now been able to create thinner and more uniform dye insulating films than ever before. Ta. Furthermore, as a result, an MIM element that exhibits a switching phenomenon and has a completely new memory function has been discovered.

〔発明の目的〕[Purpose of the invention]

すなわち、本発明の目的は電圧・電流のスイッチング特
性に対してメモリ性を有する新規な高密度記録媒体を用
いた記録装置及び記録法を)是イ共することにある。
That is, an object of the present invention is to provide a recording device and a recording method using a novel high-density recording medium that has memory properties in terms of voltage and current switching characteristics.

〔発明の概要〕[Summary of the invention]

本発明はプローブ電極、電気メモリー効果をもつ記録媒
体及び前記プローブ電極から記録媒体に電圧を印加する
書込み電圧印加手段とを有する記録装置並びに電気メモ
リー効果をもつ記録媒体にプローブ電極から電気メモリ
ー効果を生じる閾値電圧を越えた電圧を印加する記録法
に特徴を有している。
The present invention provides a recording device having a probe electrode, a recording medium having an electric memory effect, and a write voltage applying means for applying a voltage from the probe electrode to the recording medium, and a recording medium having an electric memory effect from the probe electrode. The recording method is characterized by applying a voltage that exceeds the generated threshold voltage.

一般に有機材料のほとんどは絶縁性若しくは半絶縁性を
示すことから係る本発明に於いて、適用可能なπ電子準
位をもつ群を有する有機材料は著しく多岐にわたる。 
   ′ 本発明に好適なπ電子系を有する色素の構造としては例
えば、フタロシアニン、テトラフェニルポルフィン等の
ポルフィリン骨格を有する色素、スクアリリウム基及び
クロコニックメチン基を結合鎖としてもつアズレン系色
素及びキノリン、ベンゾチアゾール、ベンゾオキサゾー
ル等の2ケの含窒素複素環をスクアリリウム基及びクロ
コニックメチン基により結合したシアニン系類似の色素
、またはシアニン色素、アントラセン及びピレン等の縮
合多環芳香族、及び芳香環及び複素環化合物が重合した
鎖状化合物及びジアセチレン基の重合体、さらにはテト
ラキノジメタンまたはテトラチアフルバレンの誘導体お
よびその類縁体およびその電荷移動錯体また更にはフェ
ロセン、トリスビピリジンルテニウム錯体等の金属錯体
化合物が挙げられる。
Since most organic materials generally exhibit insulating or semi-insulating properties, there is a wide variety of organic materials having a group having a π-electron level that can be applied to the present invention.
'Structures of dyes having a π-electron system suitable for the present invention include, for example, dyes having a porphyrin skeleton such as phthalocyanine and tetraphenylporphine, azulene dyes having squarylium groups and croconic methine groups as bonding chains, quinoline, and benzene. Cyanine-based similar dyes in which two nitrogen-containing heterocycles such as thiazole and benzoxazole are bonded by squarylium group and croconic methine group, or cyanine dyes, fused polycyclic aromatics such as anthracene and pyrene, and aromatic rings and heterocycles. Chain compounds formed by polymerization of ring compounds and polymers of diacetylene groups, derivatives of tetraquinodimethane or tetrathiafulvalene, analogs thereof and charge transfer complexes thereof, and metal complexes such as ferrocene and trisbipyridine ruthenium complexes. Examples include compounds.

有機記録媒体の形成に関しては、具体的には蒸着法やク
ラスターイオンビーム法等の適用も可能であるが、制御
性、容易性そして再現性から公知の従来技術の中ではL
B法が極めて好適である。
Regarding the formation of organic recording media, it is possible to specifically apply vapor deposition methods, cluster ion beam methods, etc., but among the known conventional techniques, L
Method B is extremely preferred.

このLB法によれば、1分子中に疎水性部位と親水性部
位とを有する有機化合物の単分子膜またはその累積膜を
基盤上に容易に形成することができ、分子オーダの厚み
を有し、かつ大面積にわたって均一、均質な有機超薄膜
を安定に供給することができる。
According to this LB method, a monomolecular film of an organic compound having a hydrophobic site and a hydrophilic site in one molecule or a cumulative film thereof can be easily formed on a substrate, and has a thickness on the order of a molecule. , and can stably supply a uniform and homogeneous ultra-thin organic film over a large area.

LB法は分子内に親水性部位と疎水性部位とを有する構
造の分子において、両者のバランス(両親媒性のバラン
ス)が適度に保たれている時、分子は水面上で親水性基
を下に向けて単分子の層になることを利用して単分子膜
またはその累積膜を作成する方法である。
The LB method is a molecule with a structure that has a hydrophilic site and a hydrophobic site, and when the balance between the two (amphiphilic balance) is maintained appropriately, the molecule lowers the hydrophilic group on the water surface. This is a method of creating a monomolecular film or a cumulative film thereof by utilizing the fact that monomolecular layers form toward

疎水性部位を構成する基としては、一般に広く知られて
いる飽和及び不飽和炭化水素基や縮合多環芳香族基及び
鎮状多環フェニル基等の各種疎水基が挙げられる。これ
らは各々単独又はその複数が組み合わされて疎水性部分
を構成する。一方、親水性部分の構成要素として最も代
表的なものは、例えばカルキホキシル基、エステル基、
酸アミド基、イミド基、ヒドロキシル基、更にはアミノ
基(1,2,3級及び4級)等の親水性基等が挙げられ
る。これらも各々単独又はその複数が組み合わされて上
記分子の親水性部分を構成する。
Examples of the group constituting the hydrophobic moiety include various hydrophobic groups such as generally widely known saturated and unsaturated hydrocarbon groups, condensed polycyclic aromatic groups, and deformed polycyclic phenyl groups. Each of these constitutes a hydrophobic portion singly or in combination. On the other hand, the most typical constituent elements of the hydrophilic moiety are, for example, carkiphoxyl group, ester group,
Examples include hydrophilic groups such as acid amide groups, imide groups, hydroxyl groups, and amino groups (1, 2, 3, and 4). These also constitute the hydrophilic portion of the above molecule either singly or in combination.

これらの疎水性基と親水性基をバランス良く併有し、か
つ適度な大きさをもつπ電子系を有する色素分子であれ
ば、水面上で単分子膜を形成することが可能であり、本
発明に対して極めて好適な材料となる。
If a dye molecule has a well-balanced combination of these hydrophobic groups and hydrophilic groups and a π-electron system with an appropriate size, it is possible to form a monomolecular film on the water surface, and this is It is an extremely suitable material for the invention.

具体例としては、例えば下記の如き分子等が[I]クロ
コニックメチン色素 ”ゝ        。0 2)         。O °)        。O K1                  R。
As a specific example, the following molecules may be used as [I]croconic methine dyes.

4)e 5)e 、6) R,R。4)e 5)e ,6) R,R.

R、R。R, R.

R、R。R, R.

ここでR,は前述の0電子率位をもつ群に相当したもの
で、しかも水面上で単分子膜を形成しやすくするために
導入された長鎖アルキル基で、その炭素数nは5≦n≦
30が好適である。
Here, R is a long-chain alkyl group that corresponds to the group with 0 electron index mentioned above and is introduced to facilitate the formation of a monomolecular film on the water surface, and its carbon number n is 5≦ n≦
30 is preferred.

以上具体例として挙げた化合物は基本構造のみであり、
これら化合物の種々な置換体も本発明に於いて好適であ
ることは言うにおよばない。
The compounds mentioned above as specific examples are only basic structures,
Needless to say, various substituted forms of these compounds are also suitable in the present invention.

[+1コスクアリリウム色素 [11で挙げた化合物のクロコニックメチン基を下記の
構造をもつスクアリリウム基でおぎかえた化合物。
[+1 Cosquarylium dye] A compound in which the croconic methine group of the compound listed in 11 is replaced with a squarylium group having the following structure.

[Ill ]ポリフィリン系色素化合物M=H2,Cu
、 Ni、 Al−Cl及び希土類金属イオン Rは単分子膜を形成しやすくするために導入されたもの
で、ここで挙げた置換基にかぎるものではない。又、R
1〜R4,Rは前述したσ電子[IV]縮合多環芳香族
化合物 R OOH [v]ジアセチレン化合物 CH3(−CH2)。C=C−C:=C(−CH2)−
m XO≦n、m≦20 但し n+m > 10 Xは親木基で一般的には−Coo)Iが用いられるが一
〇H,−CONH,等も使用できる。
[Ill] Porphyrin-based pigment compound M=H2, Cu
, Ni, Al-Cl, and the rare earth metal ion R are introduced to facilitate the formation of a monomolecular film, and are not limited to the substituents listed here. Also, R
1 to R4, R are the aforementioned σ electron [IV] condensed polycyclic aromatic compound R OOH [v] diacetylene compound CH3 (-CH2). C=C-C:=C(-CH2)-
m XO≦n, m≦20, where n+m>10

[Vl ]その他 CHa (CH2) 4べφ(奈慢トCN6)    
  R 尚、上記以外でもLB法に適している色素材料であれば
、本発明に好適なのは言うまでもない。
[Vl] Other CHa (CH2) 4beφ (NarakutoCN6)
R It goes without saying that pigment materials other than those mentioned above are suitable for the present invention as long as they are suitable for the LB method.

例えば近年研究が盛んになりつつある生体材料(例えば
バクテリオロドプシンやチトクロームC)や合成ポリペ
プチド(PBLGなと)等も適用が可能である。
For example, biomaterials (for example, bacteriorhodopsin and cytochrome C) and synthetic polypeptides (PBLG), which have been actively researched in recent years, can also be applied.

係る両親媒性の分子は、水面上で親木基を下に向けて単
分子の層を形成する。このとき、水面上の単分子層は二
次元系の特徴を有し、分子がまばらに散開しているとき
は、一分子当り面積Aと表面圧πとの間に二次元理想気
体の式、πA=KT が成り立ち、“気体膜”となる。ここに、にはボルツマ
ン定数、Tは絶対温度である。Aを十分小さくすれば分
子間相互作用が強まり、二次元固体の“凝縮膜(または
固体膜)”になる。凝縮膜はガラスや樹脂の如き種々の
材質や形状を有する任意の物体の表面へ一層ずつ移すこ
とができる。この方法を用いて、単分子膜またはその累
積膜を形成し、記録層として使用することができる。
Such amphipathic molecules form a monomolecular layer on the water surface with the parent group facing downward. At this time, the monomolecular layer on the water surface has the characteristics of a two-dimensional system, and when the molecules are sparsely dispersed, the two-dimensional ideal gas equation is expressed between the area A per molecule and the surface pressure π. πA=KT holds true, resulting in a "gas film". Here, is the Boltzmann constant and T is the absolute temperature. If A is made sufficiently small, the intermolecular interaction becomes stronger, resulting in a two-dimensional solid "condensation film (or solid film)." The condensed film can be transferred layer by layer onto the surface of arbitrary objects having various materials and shapes, such as glass and resin. Using this method, a monomolecular film or a cumulative film thereof can be formed and used as a recording layer.

具体的な製法としては、例えば以下に示す方法を挙げる
ことができる。
As a specific manufacturing method, for example, the method shown below can be mentioned.

所望の有機化合物をクロロホルム、ベンゼン。Chloroform and benzene for the desired organic compound.

アセトニトリル等の溶剤に溶解させる。次に添付図面の
第7図に示す如き適当な装置を用いて、係る溶液を水相
81上に展開させて有機化合物を膜状に形成させる。
Dissolve in a solvent such as acetonitrile. Next, using a suitable apparatus as shown in FIG. 7 of the accompanying drawings, the solution is spread on the aqueous phase 81 to form an organic compound in the form of a film.

次にこの展開層82が水相81上を自由に拡散して広が
りすぎないように仕切板(または浮子)83を設け、展
開膜82の展開面積を制限して膜物質の集合状態を制御
し、その集合状態に比例した表面圧πを得る。この仕切
板83を動かし、展開面積を縮小して膜物質の集合状態
を制御し、表面圧を徐々に上昇させ、膜の製造に適する
表面圧πを設定することができる。この表面圧を維持し
ながら、静かに清浄な基板84を垂直に上昇又は下降さ
せることにより有機化合物の単分子膜が基板84上に移
し取られる。このような単分子膜91は第8a図または
第8b図に模式的に示す如く分子が秩序正しく配列した
膜である。
Next, a partition plate (or float) 83 is provided to prevent this spread layer 82 from spreading freely on the aqueous phase 81 and spreading too much, and by limiting the spread area of the spread film 82, the state of aggregation of the film substance is controlled. , we obtain a surface pressure π proportional to its collective state. By moving the partition plate 83, the developed area can be reduced to control the aggregation state of the membrane material, and the surface pressure can be gradually increased to set the surface pressure π suitable for membrane production. While maintaining this surface pressure, the monomolecular film of the organic compound is transferred onto the substrate 84 by gently raising or lowering the clean substrate 84 vertically. Such a monomolecular film 91 is a film in which molecules are arranged in an orderly manner as schematically shown in FIG. 8a or 8b.

単分子膜91は以上で製造されるが、前記の操作を繰り
返すことにより所望の累積数の累積膜が形成される。単
分子膜91を基板84上に穆すには、上述した垂直浸漬
法の他、水平付着法、回転円筒法等の方法でも可能であ
る。尚、水平付着法は、基板を水面に水平に接触させて
単分子膜を移し取る方法であり、回転円筒法は円筒形の
基板を水面上を回転させて単分子膜を基板表面に移し取
る方法である。
The monomolecular film 91 is manufactured as described above, and by repeating the above operations, a desired number of cumulative films can be formed. In order to spread the monomolecular film 91 on the substrate 84, in addition to the above-mentioned vertical dipping method, methods such as a horizontal deposition method and a rotating cylinder method can also be used. The horizontal deposition method is a method in which a monomolecular film is transferred by bringing the substrate into horizontal contact with the water surface, and the rotating cylinder method is a method in which a cylindrical substrate is rotated above the water surface to transfer the monomolecular film onto the substrate surface. It's a method.

前述した垂直浸漬法では、表面が親水性である基板を水
面を横切る方向に水中から引き上げると有機化合物の親
水性部位92が基板84側に向いた有機化合物の単分子
l1i91が基板84上に形成される(第8b図)。前
述のように基板84を上下させると、各行程ごとに一枚
ずつ単分子膜91が積み重なって累積膜101が形成さ
れる。
In the above-mentioned vertical immersion method, when a substrate with a hydrophilic surface is lifted out of water in a direction across the water surface, a single molecule l1i91 of an organic compound is formed on the substrate 84 with the hydrophilic site 92 of the organic compound facing the substrate 84 side. (Figure 8b). When the substrate 84 is moved up and down as described above, the monomolecular films 91 are stacked one by one in each step, forming a cumulative film 101.

成膜分子の向きが引上行程と浸漬行程で逆になるので、
この方法によると単分子膜の各層間は有機化合物の疎水
性部位93aと93bが向かいあうY型膜が形成される
(第9a図)。これに対し、水平付着法は、有機化合物
の疎水性部位93が基板84側に向いた単分子11i9
1が基板84上に形成される(第8a図)。この方法で
は、単分子膜91を累積しても成膜分子の向きの交代は
なく全ての層において、疎水性部位93aと93bが基
板84側に向いたX型膜が形成される(第9b図)。反
対に全ての層において親水性部位92a、92bが基板
84側に向いた累積膜101はZ型膜と呼ばれる(第9
c図)。
Since the direction of the film-forming molecules is reversed during the pulling process and the dipping process,
According to this method, a Y-shaped film is formed between each layer of the monomolecular film in which hydrophobic sites 93a and 93b of the organic compound face each other (FIG. 9a). On the other hand, in the horizontal adhesion method, a single molecule 11i9 with the hydrophobic part 93 of the organic compound facing the substrate 84 side is used.
1 is formed on a substrate 84 (FIG. 8a). In this method, even if the monomolecular film 91 is accumulated, the direction of the film-forming molecules does not change, and an X-shaped film is formed in which the hydrophobic parts 93a and 93b face the substrate 84 in all layers (No. 9b figure). On the contrary, the cumulative film 101 in which the hydrophilic parts 92a and 92b of all the layers face the substrate 84 side is called a Z-type film (9th
c).

単分子膜91を基板84上にりす方法は、上記方法に限
定されるわけではなく、大面積基板を用いる時にはロー
ルから水相中に基板を押し出していく方法なども謀り得
る。また、前述した親水性基および疎水性基の基板への
向きは原則であり、基板の表面処理等によって変えるこ
ともできる。
The method of applying the monomolecular film 91 onto the substrate 84 is not limited to the above method; when a large-area substrate is used, a method of extruding the substrate from a roll into an aqueous phase may also be used. Further, the directions of the hydrophilic groups and hydrophobic groups described above toward the substrate are in principle, and can be changed by surface treatment of the substrate, etc.

以上の如くして有機化合物の単分子膜91またはその累
積膜101からなるポテンシャル障壁層が基板84上に
形成される。
As described above, a potential barrier layer consisting of the organic compound monomolecular film 91 or its cumulative film 101 is formed on the substrate 84.

本発明において、上記の如き無材及び有機材料が積層さ
れた薄膜を支持するための基板84は、金属、ガラス、
セラミックス、プラスチック材料等いずれの材料でもよ
く、更に耐熱性の著しく低い生体材料も使用できる。
In the present invention, the substrate 84 for supporting the thin film in which the above-mentioned inorganic and organic materials are laminated may be metal, glass,
Any material such as ceramics or plastic material may be used, and biomaterials with extremely low heat resistance may also be used.

上記の如き基板84は任意の形状でよく平板状であるの
が好ましいが、平板に何ら限定されない。すなわち前記
成膜法においては、基板の表面がいかなる形状あっても
その形状通りに膜を形成し得る利点を有するからである
The substrate 84 as described above may have any shape and is preferably flat, but is not limited to a flat plate. That is, the film forming method has the advantage that a film can be formed in accordance with the shape of the surface of the substrate, regardless of the shape.

一方、本発明で用いられる電極材料も高い伝導性を有す
るものであれば良く、例えばAu。
On the other hand, the electrode material used in the present invention may be any material as long as it has high conductivity, such as Au.

Pt、Ag、Pd、Aj!、In、Sn、Pb、Wなど
の金属やこれらの合金、さらにはグラファイトやシリナ
イド、またさらにはITO・などの導電性酸化物を始め
として数多くの材料が挙げられ、これらの本発明への適
用が考えられる。
Pt, Ag, Pd, Aj! , In, Sn, Pb, W, and other metals and their alloys, as well as graphite, silinide, and even conductive oxides such as ITO. is possible.

係る材料を用いた電極形成法としても従来公知の薄膜技
術で充分である。但し、基板上に直接形成される電極材
料は表面がLB膜形成の際、絶縁性の酸化膜をつくらな
い導電材料、例えば貴金属やITOなどの酸化物導電体
を用いることが好ましい。
As a method for forming electrodes using such materials, conventionally known thin film techniques are sufficient. However, when forming the LB film on the surface of the electrode material directly formed on the substrate, it is preferable to use a conductive material that does not form an insulating oxide film, such as a noble metal or an oxide conductor such as ITO.

なお、記録媒体の金属電極は、本発明となる記録層が絶
縁性のため必要となるが、該記録層がMΩ以下の半導体
的性質を示すものであれば該金属電極は不必要となる。
Note that the metal electrode of the recording medium is necessary because the recording layer of the present invention is insulative, but if the recording layer exhibits semiconductor properties of MΩ or less, the metal electrode is unnecessary.

すなわち、記録層そのものをプローブ電極の対向電極と
して用いることができる。
That is, the recording layer itself can be used as a counter electrode to the probe electrode.

また、プローブ電極の先端は記録/再生/消去の分解能
を上げるため出来るだけ尖らせる必要がある。本発明で
は、1φの太さの白金の先端を90°のコーンになるよ
、うに機械的に研磨し超高真空中で電界をかけて表面原
子を蒸発させたものを用いているがプローブの形状や処
理方法は何らこれに限定するものではない。
Further, the tip of the probe electrode needs to be as sharp as possible in order to improve the recording/reproducing/erasing resolution. In the present invention, a 1φ thick platinum tip is mechanically polished into a 90° cone and an electric field is applied in an ultra-high vacuum to evaporate the surface atoms. The shape and processing method are not limited to these.

以上述べてきた材料および成膜方法を用いて第4図に示
したMIM構造の素子を作成したとき、第5図と第6図
に示すような電流電圧特性を示すメモリースイッチング
素子が得られ、2つの状態(ON状態とOFF状態)が
それぞれメモリ性を有することがすでに見い出されてい
る。これらのメモリースイッチング特性は数Å〜数10
00人の層厚のものに発現されているが本発明のプロー
ブ電極を用いた記録媒体としては数Å〜500人の範囲
の層厚のものが良く、最も好ましくは10Å〜200人
の層厚をもつものが良い。
When an element with the MIM structure shown in FIG. 4 is created using the materials and film formation method described above, a memory switching element exhibiting current-voltage characteristics as shown in FIGS. 5 and 6 is obtained. It has already been found that two states (ON state and OFF state) each have memory properties. These memory switching characteristics range from several Å to several tens of Å.
However, as a recording medium using the probe electrode of the present invention, a layer thickness in the range of several Å to 500 µm is preferable, and most preferably a layer thickness in the range of 10 Å to 200 µm. It is better to have

第4図中84は基板、41はAu電極、42はA1電極
、43は前述した単分子累積膜を表わしている。
In FIG. 4, reference numeral 84 represents a substrate, 41 an Au electrode, 42 an A1 electrode, and 43 the aforementioned monomolecular cumulative film.

第1図は本発明の記録装置を示すブロック構成図である
。第1図(A)中、105はプローブ電流増巾器で、1
06は・プローブ電流が一定になるように圧電素子を用
いた微動機構107を制御するサーボ回路である。10
8はプローブ電極102と電極と電極103の間に記録
/消去用のパルス電圧を印加するための電源である。
FIG. 1 is a block diagram showing a recording apparatus of the present invention. In FIG. 1(A), 105 is a probe current amplifier;
06 is a servo circuit that controls the fine movement mechanism 107 using a piezoelectric element so that the probe current is constant. 10
8 is a power source for applying a pulse voltage for recording/erasing between the probe electrode 102 and the electrode 103;

パルス電圧を印加するときプローブ電流が急激に変化す
るためサーボ回路106は、その間出力電圧が一定にな
るように、HOLD回路をONにするように制御してい
る。
Since the probe current changes rapidly when the pulse voltage is applied, the servo circuit 106 controls the HOLD circuit to be turned on so that the output voltage remains constant during that time.

109はXY方向にプローブ電極102を゛移動制御す
るためのXY走査駆動回路である。
109 is an XY scanning drive circuit for controlling the movement of the probe electrode 102 in the XY directions.

110と111は、あらかじめ10−’A程度のプロー
ブ電流が得られるようにプローブ電極102と記録媒体
1との距離を粗動制御するものである。これらの各機器
は、すべてマイクロコンピュータ112により中央制御
されている。
110 and 111 are used to coarsely control the distance between the probe electrode 102 and the recording medium 1 so that a probe current of about 10-'A is obtained in advance. All of these devices are centrally controlled by a microcomputer 112.

また113は表示機器を表している。Further, 113 represents a display device.

また、圧電素子を用いた移動制御における機械的性能を
下記に示す。
In addition, the mechanical performance in movement control using piezoelectric elements is shown below.

Z方向微動制御範囲i:o、1層m〜1μmZ方向粗動
制御範囲:10nm〜IQmmXY方向走査範囲 : 
0. 1 nm〜l μm計測、制御許容誤差:<O,
inn 以下、本発明を実施例に従って説明する。
Z direction fine movement control range i: o, 1 layer m to 1 μm Z direction coarse movement control range: 10 nm to IQmm XY direction scanning range:
0. 1 nm to l μm measurement, control tolerance: <O,
inn Hereinafter, the present invention will be explained according to examples.

(実施例1) 第1図に示す記録再生装置を用いた。プローブ電極10
2として白金製のプローブ電極を用いた。このプローブ
電極102は記録層101の表面との距111(Z)を
制御するためのもので、電流を一定に保つように圧電素
子により、その距11(Z)を微動制御されている。更
に微動制御機構107は距@2を一定に保ったまま、面
内(x、y)方向にも微動制御できるように設計されて
いる。しかし、これらはすべて従来公知の技術である。
(Example 1) A recording/reproducing apparatus shown in FIG. 1 was used. Probe electrode 10
As No. 2, a platinum probe electrode was used. This probe electrode 102 is used to control the distance 111 (Z) from the surface of the recording layer 101, and the distance 11 (Z) is controlled by a piezoelectric element to finely move it so as to keep the current constant. Furthermore, the fine movement control mechanism 107 is designed to be able to perform fine movement control also in the in-plane (x, y) directions while keeping the distance @2 constant. However, these are all conventionally known techniques.

またプローブ電極102は直接記録・再生・消去を行う
ために用いることができる。また、記録媒体は高精度の
XYステージ114の上に置かれ、任意の位置に移動さ
せることができる。
Further, the probe electrode 102 can be used for direct recording, reproduction, and erasing. Furthermore, the recording medium is placed on a high-precision XY stage 114 and can be moved to any position.

次に、Auで形成した電極103の上に形成されたスク
アリリュウムービス−6−オクチルアズレン(以下5O
AZと略す)のLB膜(8層)を用いた記録・再生・消
去の実験についてその詳細を記す。
Next, squaryryum bis-6-octyl azulene (hereinafter 5O
The details of the recording/reproducing/erasing experiment using the LB film (8 layers) of AZ (abbreviated as AZ) are described below.

5OAZ8層を累積した記録層101をもつ記録媒体1
をXYステージ114ノ上ニffi!l、まず目視によ
りプローブ電極102の位置を決め、しっかりと固定し
た。Au電極(アース側)103とプローブ電極102
の間に−3,0Vの電圧を印加し、電流をモニターしな
がらプローブ電極i極102と記録層101表面との距
離(Z)を調整した。その後、微動制御機構107を制
御してプローブ電極102と記録層101表面までの距
離を変えていくと、第2図に示すような電流特性が得ら
れた。なお、プローブ電極102と記録層101表面と
の距mzを制御するためのプローブ電流Ipが10−’
A≧Ip≧10−+2A1好適には1O−8A≧Ip≧
10−” Aになるようにプローブ電圧を調整する必要
がある。
Recording medium 1 having a recording layer 101 in which 5 OAZ 8 layers are accumulated
XY Stage 114 no Kamifi! l. First, the position of the probe electrode 102 was determined visually and firmly fixed. Au electrode (earth side) 103 and probe electrode 102
A voltage of -3.0 V was applied during this period, and the distance (Z) between the probe electrode i-pole 102 and the surface of the recording layer 101 was adjusted while monitoring the current. Thereafter, by controlling the fine movement control mechanism 107 to change the distance between the probe electrode 102 and the surface of the recording layer 101, current characteristics as shown in FIG. 2 were obtained. Note that the probe current Ip for controlling the distance mz between the probe electrode 102 and the surface of the recording layer 101 is 10-'
A≧Ip≧10-+2A1 preferably 1O-8A≧Ip≧
The probe voltage needs to be adjusted to be 10-''A.

まず、第2図のa領域の電流値に制御電流を設定した(
10−’A)−(プローブ接地の条件)。
First, the control current was set to the current value in region a in Figure 2 (
10-'A)-(Probe grounding conditions).

プローブ電極102とAu電極103との間に電気メモ
リー効果を生じる閾値電圧を越えていない電圧である1
、5のV読み取り用電圧を印加して電流値を測定したと
ころ、μA以下でOFF状態を示した。次にオン状態を
生じる閾値電圧Vth  ON以上の電圧である第3図
に示した波形をもつ三角波パルス電圧を印加したのち、
再び1.5■の電圧を電極間に印加して電流を測定した
ところ0.7mA程度の電流が流れON状態となってい
たことを示した。
1, which is a voltage that does not exceed the threshold voltage that causes an electrical memory effect between the probe electrode 102 and the Au electrode 103.
, 5 V reading voltage was applied and the current value was measured, and it showed an OFF state at less than μA. Next, after applying a triangular wave pulse voltage having the waveform shown in FIG. 3, which is a voltage higher than the threshold voltage Vth ON that causes an on state,
When a voltage of 1.5 μ was applied between the electrodes again and the current was measured, a current of about 0.7 mA flowed, indicating that the device was in an ON state.

次にオン状態からオフ状態へ変化する閾値電圧Vth 
 OFF以上の電圧であるピーク電圧5V、パルス巾1
μsの三角波パルス電圧を印加したのち、再び1.5■
を印加したところ、この時の電流値はμA以下でOFF
状態に戻ることが確認された。
Next, the threshold voltage Vth that changes from the on state to the off state
Peak voltage 5V that is higher than OFF, pulse width 1
After applying a triangular wave pulse voltage of μs, 1.5μs is again applied.
When applied, the current value at this time was less than μA and turned off.
It was confirmed that the condition has returned.

次にプローブ電流Ipを1O−9A(第2図のb領域)
に設定して、プローブ電極102と記録層101表面と
の距@2を制御した。
Next, the probe current Ip is set to 1O-9A (region b in Figure 2).
was set to control the distance @2 between the probe electrode 102 and the surface of the recording layer 101.

XYステージ114を一定の間隔(1μ)で移動させな
がら、第3図と同様な波形を有する閾値電圧Vth  
ON以上のパルス電圧(15層maX、1μs)を印加
して、ON状態を書き込んだ。その後プローブ電極10
2と対向電極103の間に読み取り用1.5Vのプロー
ブ電圧を印加して、ON状態領域とOFF状態領域に流
れる電流量の変化を直接読み取るか、又はサーボ回路1
06を通して読み取ることができる。
While moving the XY stage 114 at a constant interval (1 μ), the threshold voltage Vth having a waveform similar to that shown in FIG.
A pulse voltage higher than ON (15 layers maX, 1 μs) was applied to write an ON state. Then probe electrode 10
A probe voltage of 1.5 V for reading is applied between the servo circuit 2 and the counter electrode 103 to directly read the change in the amount of current flowing in the ON state region and the OFF state region, or the servo circuit 1
It can be read through 06.

本例では、ON状態領域を流れるプローブ電流が記録前
(又はOFF状態領域)と比較して3桁以上変化してい
たことを確認した。
In this example, it was confirmed that the probe current flowing through the ON state region had changed by more than three orders of magnitude compared to before recording (or in the OFF state region).

更にプローブ電圧を閾値電圧Vth  OFF以上のt
OVに設定し、再び記録位置をトレースした結果、全て
の記録状態が消去されOFF状態に遷穆したことも確認
した。
Furthermore, the probe voltage is set to t higher than the threshold voltage Vth OFF.
As a result of setting it to OV and tracing the recording position again, it was confirmed that all recorded states were erased and the state was shifted to the OFF state.

次に微動制御機構107を用いて、o、ooiμから0
.1μの間の種々のピッチで長さ1μのストライブを上
記の方法で書き込み分解能を測定したところ0.01μ
以下であることがわかった。
Next, using the fine movement control mechanism 107, from o, ooiμ to 0
.. The writing resolution of 1μ long stripes at various pitches of 1μ using the above method was 0.01μ.
It was found that the following.

以上の実験に用いた5OAZ−LB膜は下記のごとく作
成した。
The 5OAZ-LB film used in the above experiment was prepared as follows.

光学研磨したガラス基板(基板104)を中性洗剤およ
びトリクレンを用いて洗浄した後下引き層としてCrを
真空蒸着法により厚さ50人堆積させ、更にAuを同法
により400人蒸着した下地電極(Au電極103)を
形成した。
A base electrode in which an optically polished glass substrate (substrate 104) was cleaned using a neutral detergent and trichloride, and then Cr was deposited as an undercoat layer to a thickness of 50 layers by vacuum evaporation, and Au was further deposited by 400 layers by the same method. (Au electrode 103) was formed.

次に5OAZを濃度0.2mg/muで溶かしたクロロ
ホルム溶液を20℃の水相上に展開し、水面上に単分子
膜を形成した。溶媒の蒸発を待ち係る単分子膜の表面圧
を20 m N / mまで高め、更にこれを一定に保
ちながら前記電極基板を水面を横切るように速度5mm
/分で静かに浸漬し、さらに引上げ2層のY形単分子膜
の累積を行った。この操作を適当回数繰返すことによっ
て前記基板上に2.4,8,12,20.30層の6 
fiII類の累積膜を形成し、記録再生実験を行った。
Next, a chloroform solution in which 5OAZ was dissolved at a concentration of 0.2 mg/mu was spread on the water phase at 20°C to form a monomolecular film on the water surface. Waiting for the evaporation of the solvent, the surface pressure of the monomolecular film was increased to 20 mN/m, and while keeping this constant, the electrode substrate was moved across the water surface at a speed of 5 mm.
The sample was gently immersed at a rate of 1/2 min, and then pulled up to accumulate two Y-shaped monolayers. By repeating this operation an appropriate number of times, 6 layers of 2.4, 8, 12, and 20.30 layers are formed on the substrate.
A cumulative film of fiII was formed and a recording/reproduction experiment was conducted.

その評価結果を表1に示す。The evaluation results are shown in Table 1.

評価は記録書き込みパルスおよび消去電圧を印加した後
の記録性および消去性の良否、更に記録状態と消去状態
での電流値の比(ON10FF比)および分解能により
総合的に判定し、特に良好なものを◎、良好なものを○
、他のものと比較していくぶん評価の低いものを△とし
た。
The evaluation is comprehensively judged based on the quality of recording and erasing properties after applying the recording write pulse and erasing voltage, as well as the ratio of current values in the recording state and erasing state (ON10FF ratio) and resolution. ◎、Good item ○
, Items with somewhat lower ratings compared to others were marked △.

〔実施例2〕 実施例1で用いた5OAZ記録媒体の代わりにルテチウ
ムシフタロジアニン[LuH(PC)2]のt−ブチル
誘導体を用いた以外は実施例1と同様にして実験を行っ
た。結果は表1にまとめて示した。5OAZと同様に充
分なS/N比で記録の書き込みと読み取りが出来ること
がわかった。
[Example 2] An experiment was conducted in the same manner as in Example 1 except that a t-butyl derivative of lutetium siphthalodianine [LuH(PC)2] was used instead of the 5OAZ recording medium used in Example 1. The results are summarized in Table 1. It was found that recording could be written and read with a sufficient S/N ratio, similar to the 5OAZ.

なお、l、uH(PC)2のt−ブチル誘導体の累積条
件は下記の通りである。
Incidentally, the accumulation conditions for the t-butyl derivative of l, uH(PC)2 are as follows.

溶 媒:クロロホルム/トリメチルベンゼン/アセトン
(1/1/2) 濃  度H0,5mg/mj2 水 相;純水、水温20℃ 表面圧:20mN/m、基板上下速度3mmZ分 (実施例3〜9〕 表2に示した基板電極材料および色素化合物を用いて記
録媒体を作成し、プローブ電流の制御電流値を10−’
Aとして実施例1と2と同様の実験を行ったところ、表
2に示す結果を得た。
Solvent: Chloroform/trimethylbenzene/acetone (1/1/2) Concentration H0.5 mg/mj2 Water phase: Pure water, water temperature 20°C Surface pressure: 20 mN/m, substrate vertical speed 3 mmZ (Examples 3 to 9 ] A recording medium was prepared using the substrate electrode materials and dye compounds shown in Table 2, and the control current value of the probe current was set to 10-'
When the same experiment as in Examples 1 and 2 was conducted as A, the results shown in Table 2 were obtained.

表中Q印で示した様にすべての試料に関し、十分な分解
能と0N10FF比で記録再生できた。
As indicated by Q in the table, all samples could be recorded and reproduced with sufficient resolution and 0N10FF ratio.

なお、色素LB膜の累積数はすべて2層である。またp
t電極はEB法を用い、ITOは(CH2) 2 OOH ***   公知の方法により高度好塩菌を培養し、抽
出した紫膜 以上述べてきた実施例中では色素記録層の形成にLB法
を使用してきたが、極めて薄く均一な膜が作成できる成
膜法であればLB法に限らず使用可能であり、具体的に
はMBEやCVD法等の真空蒸着法が挙げられる。
Note that the cumulative number of dye LB films is two in all cases. Also p
The t-electrode uses the EB method, and the ITO uses (CH2) 2 OOH *** Highly halophilic bacteria are cultured using a known method, and the purple membrane is extracted.In the examples described above, the LB method was used to form the dye recording layer. However, any film forming method that can form an extremely thin and uniform film is not limited to the LB method, and specific examples include vacuum evaporation methods such as MBE and CVD.

使用可能な材料も他の有機化合物のみならず、無機材料
、例えばカルコゲン化合物等にも応用できる。
Usable materials include not only other organic compounds but also inorganic materials such as chalcogen compounds.

更には半導体を記録媒体側電極として、電極と記録層を
一体化して用いることも可能である。
Furthermore, it is also possible to use a semiconductor as the electrode on the side of the recording medium and to integrate the electrode and the recording layer.

なお、本発明は基板材料やその形状および表面構造につ
いて何ら限定するものではない。
Note that the present invention does not limit the substrate material, its shape, or surface structure in any way.

〔本発明の効果〕[Effects of the present invention]

■光記録に較べても、はるかに高密度な記録が可能な全
く新しい記録再生方法を開示した。
■We have disclosed a completely new recording and reproducing method that allows for much higher density recording than optical recording.

■上記の新規記録再生方法を用いた新規な記録媒体を開
示した。
■A new recording medium using the above new recording and reproducing method was disclosed.

■単分子膜の累積によって記録層を形成するため、分子
オーダー(数Å〜数十人)による膜厚制御が容易に実現
できた。また制御性が優れているため記録層を形成する
とき再現性が高い。
■Since the recording layer is formed by the accumulation of monomolecular films, film thickness control on the order of molecules (several angstroms to tens of angstroms) can be easily achieved. Furthermore, since the controllability is excellent, the reproducibility when forming the recording layer is high.

■記録層が薄くて良いため、生産性に富み安価な記録媒
体を提供できる。
■Since the recording layer can be thin, a highly productive and inexpensive recording medium can be provided.

■再生に必要なエネルギーは小さく、消費電力は少ない
■The energy required for reproduction is small and the power consumption is low.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の通電記録再生装置を図解的に示す説明
図である。第2図はプローブ電極と試料(記録層)表面
との距離を変化したときのプローブ電極に1vを印加し
たときに流れる電流を図示した特性図で、第3図は記録
用のパルス電圧波形図を示した。第4図はMIM素子の
構成略図で、第5図と第6図は第4図の素子に於いて得
られる電気的特性を示す特性図である。 第7図は累積膜の成膜装置の模式図である。 第8a図と第8b図は単分子膜の模式図であり、第9a
図、第9b図と第9c図は累積膜の模式図である。
FIG. 1 is an explanatory diagram schematically showing an energized recording/reproducing apparatus of the present invention. Figure 2 is a characteristic diagram illustrating the current flowing when 1V is applied to the probe electrode when the distance between the probe electrode and the surface of the sample (recording layer) is changed, and Figure 3 is a pulse voltage waveform diagram for recording. showed that. FIG. 4 is a schematic diagram of the configuration of the MIM element, and FIGS. 5 and 6 are characteristic diagrams showing the electrical characteristics obtained in the element of FIG. 4. FIG. 7 is a schematic diagram of a cumulative film forming apparatus. Figures 8a and 8b are schematic diagrams of monolayers;
Figures 9b and 9c are schematic diagrams of cumulative films.

Claims (14)

【特許請求の範囲】[Claims] (1)プローブ電極、電気メモリー効果をもつ記録媒体
及び前記プローブ電極から記録媒体に電圧を印加する書
込み電圧印加手段とを有することを特徴とする記録装置
(1) A recording device comprising a probe electrode, a recording medium having an electric memory effect, and a write voltage applying means for applying a voltage from the probe electrode to the recording medium.
(2)前記記録媒体が前記プローブ電極と、該プローブ
電極に対向配置した対向電極との間に配置されている特
許請求の範囲第1項記載の記録装置。
(2) The recording device according to claim 1, wherein the recording medium is arranged between the probe electrode and a counter electrode arranged opposite to the probe electrode.
(3)前記記録媒体が有機化合物の単分子膜又は該単分
子層を累積した累積膜を有している特許請求の範囲第1
項記載の記録装置。
(3) Claim 1, wherein the recording medium has a monomolecular film of an organic compound or a cumulative film formed by accumulating the monomolecular layers.
Recording device as described in section.
(4)前記単分子膜又は累積膜の膜厚が数Å〜数100
0Åの範囲である特許請求の範囲第3項記載の記録装置
(4) The thickness of the monomolecular film or cumulative film is from several angstroms to several hundred
The recording device according to claim 3, wherein the recording device has a range of 0 Å.
(5)前記単分子膜又は累積膜の膜厚が数Å〜500Å
の範囲である特許請求の範囲第3項記載の記録装置。
(5) The thickness of the monomolecular film or cumulative film is several Å to 500 Å
A recording device according to claim 3, which falls within the scope of.
(6)前記単分子膜又は累積膜の膜厚が10Å〜200
Åの範囲である特許請求の範囲第3項記載の記録装置。
(6) The thickness of the monomolecular film or cumulative film is 10 Å to 200 Å.
3. The recording device according to claim 3, wherein the recording device has a range of Å.
(7)前記単分子膜又は累積膜がLB法によって成膜し
た膜である特許請求の範囲第3項記載の記録装置。
(7) The recording device according to claim 3, wherein the monomolecular film or the cumulative film is a film formed by an LB method.
(8)前記有機化合物が分子中にπ電子準位をもつ群と
σ電子準位をもつ群とを有する特許請求の範囲第3項記
載の記録装置。
(8) The recording device according to claim 3, wherein the organic compound has a group having a π electron level and a group having a σ electron level in the molecule.
(9)前記有機化合物が有機色素化合物である特許請求
の範囲第1項記載の記録装置。
(9) The recording device according to claim 1, wherein the organic compound is an organic dye compound.
(10)前記有機化合物がポルフィリン骨格を有する色
素、アズレン系色素、シアニン系色素、スクアリリウム
基をもつ色素、クロコニックメチン基をもつ色素、縮合
多環芳香族化合物、縮合複素環化合物、ジアセチレン重
合体、テトラキノジメタン、テトラチアフルバレン及び
金属錯体化合物からなる群より選択された少なくとも1
種の化合物である特許請求の範囲第3項記載の記録装置
(10) The organic compound is a dye having a porphyrin skeleton, an azulene dye, a cyanine dye, a dye having a squarylium group, a dye having a croconic methine group, a fused polycyclic aromatic compound, a fused heterocyclic compound, a diacetylene polymer. At least one compound selected from the group consisting of a metal complex compound, tetraquinodimethane, tetrathiafulvalene, and a metal complex compound.
The recording device according to claim 3, which is a seed compound.
(11)前記プローブ電極のXY走査駆動装置を有して
いる特許請求の範囲第1項記載の記録装置。
(11) The recording apparatus according to claim 1, further comprising an XY scanning drive device for the probe electrode.
(12)前記プローブ電極と記録媒体の相対位置を3次
元的に微動制御する手段を有している特許請求の範囲第
1項記載の記録装置。
(12) The recording apparatus according to claim 1, further comprising means for finely controlling the relative position of the probe electrode and the recording medium in three dimensions.
(13)電気メモリー効果をもつ記録媒体に、プローブ
電極から電気メモリー効果を生じる閾値電圧を越えた電
圧を印加することを特徴とする記録法。
(13) A recording method characterized by applying a voltage exceeding a threshold voltage that causes an electric memory effect from a probe electrode to a recording medium that has an electric memory effect.
(14)前記記録媒体に、プローブ電極と対向電極から
電気メモリー効果を生じる閾値電圧を越えた電圧を印加
する特許請求の範囲第13項記載の記録法。
(14) The recording method according to claim 13, wherein a voltage exceeding a threshold voltage that causes an electric memory effect is applied to the recording medium from a probe electrode and a counter electrode.
JP61309433A 1986-12-24 1986-12-24 Recording device and recording method Expired - Fee Related JP2556491B2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP61309433A JP2556491B2 (en) 1986-12-24 1986-12-24 Recording device and recording method
EP93200797A EP0551966B1 (en) 1986-12-24 1987-12-23 Recording device and reproducing device
DE3789373T DE3789373T2 (en) 1986-12-24 1987-12-23 Recording device and playback device.
EP87311397A EP0272935B1 (en) 1986-12-24 1987-12-23 Recording device and reproducing device
EP93200792A EP0555941B1 (en) 1986-12-24 1987-12-23 Recording device and reproducing device
DE3752180T DE3752180T2 (en) 1986-12-24 1987-12-23 Recording and playback device
DE3752269T DE3752269T2 (en) 1986-12-24 1987-12-23 Recording device and playback device
EP93200793A EP0551964B1 (en) 1986-12-24 1987-12-23 Recording and reproducing device
DE3752099T DE3752099T2 (en) 1986-12-24 1987-12-23 Recording device and playback device
US08/482,789 US5623476A (en) 1986-12-24 1995-06-07 Recording device and reproduction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61309433A JP2556491B2 (en) 1986-12-24 1986-12-24 Recording device and recording method

Publications (2)

Publication Number Publication Date
JPS63161552A true JPS63161552A (en) 1988-07-05
JP2556491B2 JP2556491B2 (en) 1996-11-20

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ID=17992947

Family Applications (1)

Application Number Title Priority Date Filing Date
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