JPH0490151A - Information processing method and information processor - Google Patents

Abstract

PURPOSE:To attain the high density, highly accurate and rapid recording/ reproducing by adopting highly accurate position detecting and controlling functions in an electric high density recording/reproducing system using a probe electrode. CONSTITUTION:In a recording medium 1 constituted of forming a recording layer 101 on an electrode base 104 having a regular and periodical structure on its face, a position detecting probe electrode 103 out of two probe electrodes is used for detecting an atomic array to be the positional coordinates of the base 104. On the other hand, a recording/reproducing probe electrode 102 is held at a fixed position from the electrode 103 in the X and Y directions (an interval between both the electrodes 102, 103 can be adjusted by a probe electrode interval fine adjustment mechanism 111) and used for data recording/ reproducing/erasing in/from the recording layer 101. Thus, a recording bits or a recording bit array is set up on a position corresponding to the atomic array formed on the crystal base. Consequently, a positional error can be reduced at the time of recording/reproducing information and high density recording can be attained.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention provides a novel information processing method and method capable of recording and reproducing information with high density and high precision, and erasing information with high precision. It relates to an information processing device.

[Background technology]

In recent years, the use of memory materials has become the core of the electronics industry, such as computers and related equipment, video disks, digital audio disks, etc., and the development of these materials has been extremely active. The performance required of memory materials varies depending on the application, but in general: 1) High density and large storage capacity.

■Recording and playback response speed is fast.

■Low power consumption.

■High productivity and low price.

etc.

Until now, semiconductor memory and magnetic memory were mainly made of magnetic materials and semiconductors, but with the recent advances in laser technology, inexpensive and high-density optical memory using organic films such as organic dyes and photopolymers has become available. Recording media have appeared.

On the other hand, recently, a scanning tunneling microscope (hereinafter abbreviated as STM) that can directly observe the electronic structure of surface atoms of a conductor has been developed, and CG, B1nn1g et al., He1ve.
ticaPhysica Acta, 55. 7
26 (1982)) It has become possible to measure real space images with high resolution regardless of whether they are single crystal or amorphous, and it also has the advantage of being able to observe with low power without damaging the medium due to current. It is expected to have a wide range of applications because it can operate in the atmosphere and can be used with various materials.

STM utilizes the fact that a tunnel current flows when a voltage is applied between a metal probe (probe electrode) and a conductive substance and the probe is brought close to a distance of about 1 nm. This current is very sensitive to changes in the distance between the two, and by scanning the probe while keeping the tunnel current constant, it is possible to draw the surface of real space and at the same time obtain various information about the total electron cloud of surface atoms. can also be read. At this time, the resolution in the in-plane direction is about one person. Therefore, by applying the principle of STM, it is possible to sufficiently perform high-density recording and reproduction on the atomic order (several people). In this case, as a recording and reproducing method, JP-A-63-204531 discloses an appropriate method using high-energy electromagnetic waves such as particle beams (electron beams, ion beams) or X-rays, and energy rays such as visible and ultraviolet light. A method of performing recording by changing the surface condition of the recording layer and reproducing it with STM, as well as JP-A-63-161552 and JP-A-63-
Publication No. 161553 discloses that the recording layer is made of a material that has a memory effect on the switching characteristics of voltage and current, such as π.
Methods have been proposed in which recording and reproduction are performed using STM using thin film layers of electronic organic compounds and chalcogenides.

There is no doubt that all of these recording methods are methods that make high-density recording possible by taking advantage of the characteristics of STM. It greatly depends on the scanning accuracy and position control accuracy of Current probe electrode micro movement mechanism (fine movement mechanism)
Although this method uses a piezoelectric actuator using a piezoelectric element, it has the problem of hysteresis of the piezoelectric material, which is an obstacle to increasing the recording density. Furthermore, the mechanism for finely moving and scanning the probe electrode in the X-Y direction is generally not necessarily sufficient in terms of orthogonality between the X and Y axes. That is, there is a problem in the fine movement of the probe electrode during recording and reproduction or in the position reproducibility of the scanning mechanism. A means to solve this problem is to create a scale as a reference for position and direction on the recording medium, detect information regarding position and direction from the scale, and respond to the detected position information. It is conceivable to perform recording and playback based on the position.

Such a method is employed not only in recording and reproducing systems using VTRs, but also in recording systems that are generally classified as high-density recording systems, such as optical disks and optical cards. At this time, as recording becomes more dense and finer, naturally more minute positional information must be recorded and detected.

Such minute position detection means include an optical method, a magnetic method, and a capacitance method, but among these, the optical method using the principle of grating interference provides the highest resolution. It is. In this method, monochromatic light is incident on a diffraction grating as a reference scale, the diffracted light of the ±1st order is synthesized and interfered with using a semi-transparent mirror, and the resulting bright and dark interference light is photoelectrically converted by a photodetector. , the amount of relative displacement between the optical system and the reference scale is detected from the brightness and darkness of the interference light.

However, in the above conventional example, the performance (resolution) of the grating interferometric optical position detection method, which has the highest resolution, is mainly determined by the grating pitch, and how accurately this can be carved into minute intervals and how precisely it can be The important point is whether it can be detected, and the current precision processing technology (EB writing and ion beam processing)
Therefore, the accuracy is at most 0.01 μm (=100 people). Also, the detection technology (optical heterogain method)
．． The resolution is 0.01 μm. Therefore, there are problems in recording and reproducing using STM, which are significantly inferior in accuracy and require complicated steps to create grids.

[Problem that the invention seeks to solve]

For this reason, proposals have been made to utilize the atomic period based on the regular atomic arrangement within the surface of the recording medium for tracking in recording and reproduction using STM (Japanese Patent Laid-Open Nos. 1-53363 and 1-53364). .

However, in these methods, an area where no recording layer is deposited is provided on a part of the recording medium, and the atomic period of the substrate surface existing in this area is detected and used for tracking. There was a problem that the structure became complicated.

Therefore, an object of the present invention is to introduce a highly accurate position detection function and a position control function in an electrical high-density recording/reproducing method using probe electrodes, and to achieve high-density, high-accuracy, and high-speed recording and reproduction. An object of the present invention is to provide an information processing method and an information processing device that can perform the following steps.

[Means for solving problems]

The above object is achieved by the present invention as follows.

That is, the present invention uses a plurality of probe electrodes for a recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in the plane, and at least one probe electrode (
A position on the periodic structure of the electrode substrate is detected via the recording layer using a first probe electrode), and at least one probe is placed at an arbitrary set position on the recording layer corresponding to the detected position.
An information processing method characterized by recording information on a recording layer, reproducing recorded information, or erasing recorded information using two probe electrodes (second probes). .

Further, the present invention uses a plurality of probe electrodes for a recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in the plane, and at least one probe electrode (first probe electrode) among them is used. detect the position on the periodic structure of the electrode substrate through the recording layer, and place at least one probe electrode (second probe electrode) at an arbitrary set position on the recording layer corresponding to the detected position. At least one probe electrode (third probe electrode) is used to record information on the recording layer, to reproduce recorded information, or to erase recorded information. This information processing method is characterized in that the amount of variation in the distance of the substrate is detected, and the distance between the second probe electrode and the surface of the recording medium is adjusted based on the amount of variation.

Furthermore, the present invention has a recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in a plane, and a plurality of probe electrodes arranged at positions facing the recording medium, at least one of which means for detecting a position on the periodic structure of the electrode substrate via the recording layer using a probe electrode (first probe electrode), and at an arbitrary set position on the recording layer corresponding to the detected position; It is characterized by comprising means for recording information on the recording layer, reproducing recorded information, or erasing recorded information using at least one probe electrode (second probe electrode). This is an information processing device.

The present invention has a recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in a plane, and a plurality of probe electrodes arranged at positions facing the recording medium, and at least one probe electrode among them is provided. means for detecting a position on the periodic structure of the electrode substrate via the recording layer using an electrode (first probe electrode), at least one at an arbitrary set position on the recording layer corresponding to the detected position; Probe electrode (
recording to the recording layer using the second probe electrode) or
means for reproducing recorded information or erasing recorded information; means for detecting the amount of variation in the distance between the probe electrode and the recording medium using at least one probe electrode (third probe electrode); The information processing apparatus is characterized by comprising means for adjusting the distance between the second probe electrode and the surface of the recording medium based on the amount of variation.

[Preferred embodiment of the present invention]

Position detection in the present invention includes recording and reproducing information, as well as
By applying a bias voltage between a conductive probe (probe electrode) and a conductive substance and bringing the distance between them close to about 1 nm, a tunnel current flows depending on the work function of the conductive substance. There is. In the present invention, the recording layer is formed on the electrode substrate, but the electronic state of the electrode substrate, which is a conductive material, can be recorded between the probe electrode and the electrode substrate by appropriately setting observation conditions. Even if there is a layer, it can be directly observed. Applying this, we introduce a positional coordinate system based on the regular atomic arrangement into a recording medium that has a regular atomic arrangement on the surface of the electrode substrate, and change the characteristic tunneling current corresponding to the positional coordinate system. The position is detected by detecting the position, and based on the position detection result, the recording, playback, or erasing position on the recording medium that indicates the relative positional relationship with the position coordinate system is specified, and This controls the position of the probe electrode on the recording/reproducing position.

FIG. 1 is a schematic diagram showing the positional relationship between the coordinate axes and the recording position at this time. In other words, the position information (
A to A) are always in a relative positional relationship (A-A', etc.) with the recording position (A' to I'). Therefore, by detecting the position information A-I, the recording positions A' to I' can always be specified. At this time, each point (scale) on the coordinate axis and the recording position do not necessarily have to have a unique relative arrangement.
For example, as shown in FIG. 2, there may be a plurality of recording positions corresponding to the position information A, such as A'A''', etc., in addition to A'.

Of course, unambiguous (1:1 correspondence) is preferable in terms of accuracy. Further, the coordinate axes do not need to be one, and a plurality of coordinate axes may be used as necessary, and the coordinate axes need not be one-dimensional, but may be two-dimensional (mesh-like). In this case, recording positions are also two-dimensionally arranged corresponding to each grid point of the two-dimensional coordinate system.

<Coordinate Axes> The coordinate axes of the position detection system used in the present invention are formed using the regular atomic arrangement of the electrode substrate. As an electrode substrate having such a regular atomic arrangement, conductive materials with predetermined interstitial distances, such as various metals and graphite single crystals, can be used. In addition, the tunnel current used in the present invention is nA. Since the conductive material has a conductivity of 10-10 (Ω cm)-' or more, it is sufficient to use a single crystal of a so-called semiconductor such as silicon. . Among these, consider metal samples as a representative example. Now, when a voltage V lower than the work function φ is applied between the probe electrode and the metal sample separated by a distance Z, the tunneling current density J is freed, which is known to cause electrons to tunnel through the potential barrier. When calculated using electronic approximation, JT=(βV/2yrλZ) e
It can be expressed as xp (-22/λ) .=(1).

However, λ-h/f 10,000 Wf - Attenuation distance of the wave function in vacuum or atmosphere outside the metal h = r/2π r, blank constant m Mass of electron β = e2/h: e: Electron charge formula ( In 1), if Z=Zc and a constant value, the tunnel current density J□ changes depending on the work function φ of the reference atomic arrangement. Therefore, on the metal sample surface related to the probe electrode, Z=
By scanning in an arbitrary linear direction while maintaining Zc, the tunnel current changes periodically according to the metal atomic arrangement. Here, when using a metal sample whose lattice constant is known in advance,
The state of atomic arrangement in any direction based on the lattice points on any crystal plane is obvious, and the change in periodic tunneling current obtained when the probe electrode is scanned in such a direction can be fully predicted. . Therefore, if the scanning direction of the probe electrode is corrected so that the predicted value of the tunnel current change and the measured value of the tunnel current change obtained by actually scanning the probe current are equal, the movement of the probe electrode is It follows the atomic arrangement of the sample. That is, if the atomic arrangement is regarded as a coordinate axis, the probe electrode will move on this coordinate axis.

Now, by providing a second probe electrode that can be mechanically or electrically linked to the movement of the first probe electrode for position detection, recording can be made that corresponds to a specific point determined by the first probe electrode. At specific locations on the layer, the second probe electrode can be used to record, reproduce or erase information.

In this case, even if the recording layer is deposited on the electrode substrate as described above, if appropriate conditions are selected, it is possible to detect the periodic atomic structure of the electrode substrate underlying the recording layer using the probe electrode. It is possible to read. Therefore, there is no need to specially provide a position detection area on the electrode substrate where the electrode substrate, that is, the atomic arrangement as the coordinate axis, is exposed (if the recording layer is deposited on all or most of the electrode substrate surface). In order to detect the atomic structure beneath the recording layer using a probe electrode, appropriate conditions are required as described above.First, the thickness of the recording layer must be It is desirable that the thickness be as thin as possible, preferably 500 Å or less, more preferably 100 Å or less.In addition, the bias voltage V applied between the probe electrode and the electrode substrate and the tunnel current density J
It is also necessary to select and use an appropriate value for the In determining the optimal values of these values, although a complete theory has not been established at present, the probe electrode used in detecting the atomic structure of the substrate through the deposited layer on the substrate, that is, the recording layer in the present invention. The absolute value of the via voltage and the tunnel current applied between the substrate and the substrate are respectively l V (sub
) l and JT (Sub), or the absolute value of the bias voltage applied between the tablobe electrode and the substrate used to detect the structure of the surface of the recording layer, and the tunnel current, respectively, are v (ads ) l and J7 (ads
), V (sub) l < l V (ad
s) It is desirable that one or both of the following relationships hold: J (sub)>J (ads).

A specific value of 1V (sub)1 is 1V or less, preferably 500 to 20 mV. As will be described later, recording, reproduction, and erasing in the present invention are all performed electrically (voltage application), so the bias voltage applied between the probe electrode and the substrate when detecting the substrate structure is It is necessary to select a value that will prevent recording or erasing from the recording layer due to voltage application. For example, if the recording layer is LB
IV (sub) if it is formed of a membrane
There is no problem if l is 1v or less. Also, JT (sub
), in equation (1), if the probe electrode is scanned while keeping Z=ZC constant, JT (sub
Although the value of ) naturally changes according to the atomic arrangement of the electrode substrate, it is preferable to set the average value to about 100 pA to 10 nA, more preferably about 500 pA to 3 nA. V (sub) and JT above
The (Sub) value is just an example, and other conditions may be used.

From the above, if part or all of the electrode substrate surface has a regular atomic arrangement and the arrangement state is known, there is a unique relative relationship with respect to the coordinate axis using the crystal lattice of the atomic arrangement. An x-y coordinate system can be established on the recording layer deposited on the electrode substrate. Note that it is desirable that the recording site and the position detection site on the recording medium are separated from each other.

<Recording medium> The recording medium used in the present invention consists of a substrate (electrode substrate) and a recording layer provided thereon, and has a memory switching phenomenon (electrical memory effect) in current/voltage characteristics. can use things. That is, the recording medium is
It exhibits at least two or more clearly different resistance states depending on the applied voltage, and can freely transition between these states by applying a voltage or current equal to or higher than a threshold that changes the electrical conductivity of the recording layer (switching). phenomenon). Also, each resistance state created can retain its state if a voltage or current is applied within a threshold value (memory phenomenon). Examples of specific materials constituting the recording layer include (1) Se combined with oxide glass, borate glass, or elements of groups m, rv, , V, and VI of the periodic table;
Te.

Examples include amorphous semiconductors such as chalcogenide glass containing As. They are optical hunt cap Eg
It is an intrinsic semiconductor with an electric activation energy ΔE of about 0.6 to 1.4 eV or about 0.7 to 1.6 eV. As a specific example of chalcogenide glass, As-3e-T
e series, Ge-As-3e series, 5i-Ge-AsTe series,
For example, Si 16 Ge 14 As 5 Teas
(subscripts are atomic %), or Ge-Te-X system, 5i-
Te-X system (X = small amount of V, group VI element) e.g.
+s T e s+ S b 2 S 2 is mentioned.

Furthermore, Ge-5b-3e type chalcogenide glass can also be used.

In an amorphous semiconductor layer in which the above compound is deposited on an electrode, an electric memory effect of the medium can be expressed by applying a voltage using a probe electrode in a direction perpendicular to the film surface.

As a method for depositing such a material, conventionally known thin film forming techniques are sufficient to achieve the object of the present invention.

For example, suitable film-forming methods include a vacuum evaporation method, a cluster ion beam method, and the like.

For boat fishing, the electrical memory effect of such materials has been observed with film thicknesses of several μm or less, but from the viewpoint of uniformity and recording performance, a film thickness of 1 μm or less is preferable. Further, in the present invention, since it is necessary to detect the atomic arrangement of the electrode substrate existing below through the recording layer, it is desirable that the film thickness is 500 Å or less. Furthermore, from the viewpoint of recording resolution as a recording medium, it is desirable that the recording layer be as thin as possible, and the more preferable film thickness is 30 to 200 layers.

(2) Furthermore, tetraquinodimethane (TCNQ), TCN
Q derivatives, such as tetrafluorotetracyaquinonemethane (TCNQF4), tetracyanoethylene (TCNE
) and tetracyanonaphthoquinodimethane (TNAP)
An example may also be an organic semiconductor layer in which a salt of an electron-accepting compound (e.g., copper, silver, etc.) and a metal having a relatively low reduction potential, such as copper or silver, is deposited on an electrode.

As a method for forming such an organic semiconductor layer, a method is used in which the electron-accepting compound is vacuum-deposited on a copper or silver electrode.

The electrical memory effect of organic semiconductors has been observed in films with a thickness of several tens of micrometers or less, but from the viewpoint of film formability and uniformity, it can be reduced to 1 micrometer or less, and even thinner from the viewpoint of detecting the substrate structure. The film thickness is preferably 30 to 500 people.

(3) Furthermore, there may be mentioned a recording medium in which molecules using both a group having a π electron level and a group having only an electron level are laminated on an electrode.

Examples of structures of dyes having a π-electron system suitable for the present invention include phthalocyanine, dyes having a porphyrin skeleton such as tetraphenylporphine, azulene dyes having squarylium groups and croconic methine groups as bonding chains, quinoline, and benzothiazole. , cyanine-based similar dyes in which two nitrogen-containing heterocycles are bonded by a squarylium group and a croconic methine group, such as penzooxysazole, or cyanine dyes, fused polycyclic aromatics such as anthracene and pyrene, and aromatic rings. and chain compounds obtained by polymerization of heterocyclic compounds and polymers of diacetylene groups, further derivatives of tetraquinodimethane or tetrathiafulvalene, analogs thereof, charge transfer complexes thereof, and further ferrocene, trisbipyridine ruthenium complexes, etc. Examples include metal complex compounds.

In addition to the above-mentioned low-molecular materials, it is also possible to use various polymeric materials. Examples include addition polymers such as polyacrylic acid derivatives, condensation polymers such as polyimide or polyphenylene, or polythiophene, ring-opening polymers such as nylon, and biopolymer materials such as polypeptides and bacteriorhodopsin.

Regarding the formation of organic recording media, it is possible to specifically apply vapor deposition methods, cluster ion beam methods, etc., but among the known conventional techniques, L
Method B is extremely preferred.

According to this LB method, a monomolecular film of an organic compound having a hydrophobic site and a hydrophilic site in one molecule or a cumulative film thereof can be easily formed on a substrate, and has a thickness on the order of a molecule. , and can stably supply a uniform and homogeneous ultra-thin organic film over a large area.

The LB method is a molecule with a structure that has a hydrophilic site and a hydrophobic site, and when the balance between the two (amphiphilic balance) is maintained appropriately, the molecule lowers the hydrophilic group on the water surface. This is a method of producing a monomolecular film or a cumulative film thereof by utilizing the fact that it becomes a monomolecular layer toward.

Examples of the group constituting the hydrophobic moiety include various hydrophobic groups such as widely known saturated and unsaturated hydrocarbon groups, fused polycyclic aromatic groups, and cyclopolycyclic phenyl groups. or a combination of two or more thereof constitutes a hydrophobic site.On the other hand, the most typical constituent elements of a hydrophilic site are, for example, a carboxyl group, an ester group, an acid amide group, an imide group, a hydroxyl group, and an amino group. basis,
(l.

Examples include hydrophilic groups such as 2.tertiary and quaternary).

These also constitute the hydrophilic portion of the above molecule either singly or in combination.

If it has both these hydrophobic groups and hydrophilic groups in a well-balanced manner, it is possible to form a monomolecular film on the water surface.
Specific examples of materials that are extremely suitable for the present invention include the following molecules.

<Organic Materials> [1] Croconic methine dye [II Co. A compound in which the croconic methine group of the compound listed in Squarylium dye [r] is replaced with a squarylium group having the following structure.

[III] ■) Porphyrin-based dye compound Here, R1 corresponds to the group with the above-mentioned σ electron level, and is a long-chain alkyl group introduced to facilitate the formation of a monomolecular film on the water surface. , the number of carbon atoms n is 5≦n≦
30 is preferred.

M==H2, Cu, Ni, Al-Cl and rare earth metal ion [IV] Condensed polycyclic aromatic compound (CH2)2 OOH Br- R was introduced to facilitate the formation of a monomolecular film, The substituents are not limited to those listed here.

Further, R1-R4,R corresponds to the group having the above-mentioned σ electron level.

[V] diacetylene compound CH3,000 CH2ji.

CmiC C=C÷CH2:), x 0 ≦ n, f ≦ 20 but n-11! ＞X is a hydrophilic group, generally 1000H is used, but -O
H, -CONH2, etc. can also be used.

[VI] Others l) <Organic polymer materials> [I] Addition polymers]) Polyacrylic acid R1 ÷CH-C÷ 02H 2) Polyacrylic acid ester ÷CH-C+ 02R5 3) Acrylic acid copolymer R1 6) Hinyl acetate copolymer - 1) Polyimide 2) Polyamide 4) Acrylic ester copolymer 5) Polyvinyl acetate ÷0CO-CH-CH2÷ [I [I] Ring-opening polymer 1) Polyethylene oxide -(-0-CH-CH2-) where, R1 is a long-chain alkyl group introduced to easily form a monomolecular film on the water surface, and its carbon number n is 5≦n.
≦30 is suitable.

Further, R5 is a short-chain alkyl group, and the number of carbon atoms n is 1≦n
≦4 is suitable. The degree of polymerization m is preferably 100≦m≦5000.

The compounds mentioned above as specific examples are only basic structures, and it goes without saying that various substituted products of these compounds are also suitable in the present invention.

It goes without saying that dye materials other than those mentioned above are suitable for the present invention as long as they are suitable for the LB method. For example, biomaterials (e.g. bacpriolotopsin and cytochrome C) and synthetic polypeptides (PB
LG, etc.) can also be applied.

The electrical memory effect of compounds with these π-electron levels has been observed with film thicknesses of several tens of μm or less (for example, 5akai et al., Applied
Physics Letters Magazine Volume 53 1274
~1276 pages, 1988), 2000 Å or less from the viewpoint of film formability and uniformity, and 1 from the viewpoint of substrate structure detection.
A film thickness of 0 to 200 people is preferred.

The electrode substrate that supports the material having the electrical memory effect described in items (1) to (3) above needs to have the characteristics of an electrode, but the electrode substrate must have the characteristics of an electrode.
Any conductor having the above electrical conductivity can be used. That is, Au, Pt, Pd, Ag.

Metal plates such as Af In, Sn, Pb, and W, alloys thereof, or deposits of these metals and alloys on glass, ceramics, or plastic substrates can be used. Furthermore, there are many materials including Si single crystal and graphite. However, since these electrode substrates also play the role of coordinate axes as mentioned above, it is naturally assumed that they have a regular atomic arrangement.

Therefore, it is necessary to have a single crystal area at least as large as the desired recording area.

Probe electrode> The tip of the probe electrode used in the present invention is used to record information.
It is necessary to make it as sharp as possible in order to increase the resolution of reproduction/erasure. Examples of the material include Pt, Pt-Rb
, Pt-Ir, W, Au, Ag, etc. In the present invention, tungsten with a diameter of 1 mm is used as a probe electrode after controlling its tip shape using an electric field polishing method, but the manufacturing method and shape of the probe electrode are not limited thereto.

<Detection of variation in distance between probe electrode and recording medium> In the present invention, information is recorded/reproduced/erased by moving the recording/reproducing probe electrode over the surface of the recording medium while keeping the distance from the surface of the recording medium constant. Although scanning is performed continuously, it is necessary to take measures to keep the above-mentioned distance at a constant value even if the recording medium fluctuates due to causes such as thermal drift or vibration.

Such a request is made by measuring the tunnel current JA flowing between the probe electrode and the electrode substrate using a probe electrode, and if there is a change in Jl at this time, the recording/reproducing probe electrode is adjusted based on the amount of change. This can be solved by correcting the position (height direction). In this case, the bias voltage applied between the recording/reproducing probe electrode and the electrode substrate may be time-divided to use one for recording/reproducing//v4 and the other for detecting the position in the thickness direction of the electrode substrate. However, the driving method becomes complicated, and the conductivity or shape of the recording area in the recording layer changes as information is recorded, so changes in tunnel current detected during reproduction of recorded information may affect the recording medium. There is a problem in that it is difficult to determine whether this is due to positional fluctuations or recorded information. Therefore, it is desirable that the recording/reproducing probe electrode is different from the probe electrode for detecting the amount of variation in the thickness direction of the electrode substrate (hereinafter referred to as the probe electrode for detecting the amount of variation in the Z direction). The Z-direction variation detection probe electrode and the atomic arrangement detection probe electrode of the electrode substrate may be the same or different. It goes without saying that when a change occurs in the in-plane direction of the recording medium, the amount of change can be detected using a probe electrode for detecting atomic arrangement (based on this, it is possible to detect the amount of change using a probe electrode for recording/reproducing). The scanning direction is corrected.The number of probe electrodes for detecting the amount of variation in the Z direction does not need to be limited to one, and a plurality of probe electrodes may be used.

(Configuration of Information Processing Apparatus) FIG. 3 is a block diagram showing an information processing apparatus according to the present invention having two probe electrodes, one for position detection and one for recording/reproducing. In FIG. 3, 102 and 103 are probe electrodes used for recording/reproducing and position detection, respectively, and the distance between these two probe electrodes is finely adjusted by a probe electrode spacing fine adjustment mechanism 112 using a piezoelectric element. Adjustable, but usually kept at a constant spacing. 1
06 is a bias voltage source and probe current amplifier, 1
08 is a servo circuit that controls the Z-axis direction fine movement mechanism 107 using a piezoelectric element. Reference numeral 112 denotes a current for applying a recording/erasing pulse voltage between the recording/reproducing probe electrode 102 and the electrode substrate 104.

Since the probe current changes rapidly when a pulse voltage is applied, the servo circuit 108 controls the HOLD circuit to be turned on so that the output voltage is constant during that time.

110 is a pair of probe electrodes 102 and 103 in the x and y force directions.
This is an XY scanning drive circuit for controlling the movement of the .

113 and 114 are connected in advance to the probe electrodes 102 and 103 so that a probe current of IO-' [degrees] is obtained.
It is used to coarsely control the distance between the probe electrode and the recording medium l, or to increase the relative displacement in the XY direction between the probe electrode and the substrate (outside the range of the fine movement control mechanism).

All of these devices are microcomputer 115
Centrally controlled by Further, 116 represents a display device.

In addition, the mechanical performance in movement control using piezoelectric elements is shown below.

Z-direction fine movement control range: 0.1 nm to 1 μm Z-direction coarse movement control range: l On m to 10 m mXY direction scanning range 20.1 to 1 μm 0.1 nm (during fine movement control) Measurement and control tolerance: <lnm (during fine movement control) The information processing method of the present invention will be described in detail below with reference to embodiments.

[Example 1] An information processing device shown in FIG. 3 was used. Probe electrode 10
As No. 2,103, a tungsten probe electrode was used. These probe electrodes 102 and 103 are used to control the distance (Z) from the surface of the recording medium 1, and the distance (Z) is independently and finely controlled by a piezoelectric element to keep the current constant. ing.

Furthermore, the fine movement control mechanism is designed to be able to perform fine movement control in the in-plane (x, y) directions while keeping the distance (Z) constant.

Of the two probe electrodes, position detection probe electrode 1
03 is used to detect the atomic arrangement as the position coordinates of the electrode substrate 104. The other recording/reproducing probe electrode 102
is held at a constant position with respect to the position detection probe electrode 103 in the X and Y directions (the interval can be adjusted using the probe electrode interval fine adjustment mechanism 111), and is used for recording, reproduction, and erasing on the recording layer 101. used for.

These two probe electrodes are basically designed to be able to perform fine movement control in the in-plane (x, y) directions in conjunction with each other, but they are each independently fine movement controlled in the Z direction. Furthermore, the recording medium 1 is placed on a high-precision X-Y stage 117, and can be moved to any position (X-Y
coarse movement mechanism). Note that the coarse movement mechanism's X-Y direction and the fine movement mechanism's
The −Y direction can be matched within the range of error caused by the difference in accuracy between the movement control mechanisms.

Next, details of the recording medium used in this example will be described.

Mica was used as the substrate 105, and after it was folded in the atmosphere, gold was evaporated to a thickness of 2500 nm on the surface between the folds to form an electrode substrate 104 made of a single crystal thin film of gold. Vapor deposition conditions: vacuum level 1X1O-6TORR, substrate temperature 500°C
The deposition rate was 20 persons/min.

Next, two to eight layers of polyimide LB films were laminated on the electrode substrate to form a recording layer 101.

Hereinafter, a method for producing a polyimide LB film will be described.

The polyamic acid shown in formula (2) was dissolved in N,N-dimethylacetamide solvent (monomer equivalent concentration lXl
After 0-3), a separately prepared 1×1O−′M solution of N,N-methyloctadecylamine in the same solvent was added to
: 2 (V/V) to prepare a polyamic acid octadecylamine salt solution shown in formula (3).

This solution was spread on an aqueous phase consisting of pure water at a water temperature of 20°C to form a monomolecular film on the water surface. After solvent removal, the surface pressure was increased to 25 mN/m. After gently immersing the substrate with the counter electrode described above at a speed of 5 mm/min in the direction across the water surface while keeping the surface pressure constant,
Subsequently, it was gently pulled up at 5 mm/min to produce a two-layer Y-type monomolecular cumulative film. 4. Repeat this operation further. A monomolecular cumulative film of 6.8 layers of polyamic acid octadecylamine salt was also formed.

Next, the substrate is heat treated at 300°C for 10 minutes,
Polyamic acid octadecylamine salt was imidized to obtain a polyimide LB film of formula (4)) with 2.4.6 or 8 layers.

(CH2) 17CH3 A recording/reproducing experiment was conducted using the recording medium I prepared above. The details are described below.

A recording medium 1 having a recording layer 101 made of two polyimide layers was placed on an X, Y stage 117. Next, the position detection probe electrode 103 was moved, and a probe voltage of O, lV was applied between the position detection probe electrode 103 and the gold electrode substrate 104. After this, the tunnel current is about 1n
The distance between the probe electrode 103 and the surface of the recording medium 1 was brought closer using the Z-axis direction fine movement control mechanism 107 and the servo circuit 108 until A was reached. Next, the xy direction fine movement control mechanism 1
The probe electrode 103 for position detection was scanned over a range of 60 human angles using an XY direction scanning drive circuit to detect the atomic arrangement of the electrode substrate, that is, gold. The crystal structure of the obtained gold was adjusted so that its (1,0,1) direction was in the X direction of the probe electrode scanning system, and the (2.1) direction was in the Y direction of the probe electrode scanning system. I did it. At this time, the AuAu interatomic pitch is 2.88 people in the X direction,
It was 5.0OA in the Y direction. At this time, at the same time, the XY force directions of the coarse movement mechanism were adjusted so that they matched within the control error range of the coarse movement mechanism in the XY force direction of the adjusted fine movement mechanism.

Next, the recording/reproducing probe electrode 102 and the electrode substrate 104
A probe voltage of 0.5■ is applied between the probe electrode 102 and the surface of the recording medium 1, and the distance between the probe electrode 102 and the surface of the recording medium 1 is adjusted using the Z-axis fine movement control mechanism 107 and the servo circuit 108 so that the tunnel current becomes 1 nA. did. Next, using the probe electrode spacing fine adjustment mechanism 111, the distance between the recording/reproducing probe electrode 102 and the position detection probe electrode 103 is adjusted to X=2 m.
It was adjusted so that m Y = Omm.

Next, the position detection probe electrode 103 was scanned according to the scanning pattern shown in FIG. At this time, the probe voltage described earlier = 0. Under the IV condition, the distance between the probe electrode 103 and the recording medium l was fixed at the initially determined condition, and while monitoring changes in the tunneling current intensity caused by the gold atomic arrangement, the scanning direction was correct and all units were checked. (1, O, D) direction (X-axis) and (D) direction of the crystal.

2. Constant correction was made to match the direction (Y axis). According to the above scanning pattern of the probe electrode for position detection, the probe electrode 102 for recording and reproduction also moved in conjunction with the same scanning pattern (desired recording was performed on the recording layer 101. Recording of the present invention is formed using the electric memory effect of the recording layer 101. That is, a triangular wave pulse voltage having the waveform shown in FIG. A low resistance state Q (ON state) was generated on the layer 101. At this time, the recording/reproducing probe electrode 102 was placed on one side with the + side gold electrode substrate 104. Note that the number of recorded bits was 5.
．． The pitch was set to 76 nm. After recording, the recorded information was reproduced again according to the pattern shown in FIG. At this time, a reading voltage of 0.5 V, which does not exceed the threshold voltage that can cause or erase an electric memory effect, is applied between the recording/reproducing probe electrode 102 and the gold electrode substrate 104 to perform tunneling. The current was measured and recorded information was reproduced. In the above playback experiment, the data transfer speed was
The pit error rate when expressed as Hz was 8×10-'.

Note that the recording/reproducing probe electrode 102 and the gold electrode substrate 1
After applying the pulse voltage shown in FIG. 6 to the information recording section that causes the recording region that is in the ON state to transition to the OFF state between In the status section, the recorded status is erased and turned OFF.
It was confirmed that the tunnel current returned to 1 nA.

Furthermore, the recording layer 102 of the recording medium I is made of a polyimide two-layer LB film, and the above-mentioned 4, 6 or 8 layers of polydust 1; r-
In the case of changing to the B film, it was confirmed that recording, reproduction, and erasing similar to those described above are possible.

Incidentally, in Example 1, when one probe electrode is used and both position detection and recording/reproduction are performed in a time-divided manner using the one probe electrode, when reproducing recorded information, The pit error rate was 3X10-' when the transfer rate was 1 Mbps.

[Example 2] In place of the polyimide two-layer LB film in Example 1, two layers of squarylium-bis-6-octylazulene (hereinafter 5
A recording/reproducing experiment was conducted in the same manner as in Example 1 except that an LB film (abbreviated as OAZ) was used as the recording layer 101. The method for forming the recording layer will be described below. First, 5OAZ at a concentration of 0.2
mg/ml! The benzene solution dissolved in 1 was spread on the water phase at 20°C to form a monomolecular film on the water surface. After waiting for the solvent to evaporate, the surface pressure of the monomolecular film was increased to 20 mN/m, and while keeping this constant, the substrate was gently immersed and pulled out at a speed of 3 mm/min across the water surface. A two-layer cumulative film of 5OAZ monolayer is applied to the electrode substrate 104.
formed on top.

As a result of playback experiments, the pit error rate was 1xlO-5 when the transfer rate was IM bps.

[Example 3] In Example 1, instead of the polyimide 2iLB film,
The recording layer 103 was constructed using CuTCNQF4, and recording/reproducing experiments similar to those in Example 1 were conducted.

Note that the applied voltage for recording was a rectangular pulse of 2 Vmax, Ions, and the applied voltage for reproduction was 0.1 V.

Further, as the applied voltage for erasing, a rectangular pulse of 5 Vmax and 100 ns was used. As a result of playback experiments, the data transfer speed was
The pit error rate when set to Mbps is 9X10-'
Met. Next, a method for creating the CuTCNQF4 recording layer 103 will be described. On the Au substrate electrode 104, Cu and TCNQF4 are co-deposited by vacuum evaporation method to form Cu+TC.
100 NQF 4 layers were deposited (substrate temperature; room temperature).

At this time, the deposition rate was Cu; 1 person/s, TCNQF
4; Heating was carried out by passing a preset current value to about 4 people/S. As a result, it was confirmed that a blue film was deposited due to the production of CuTCNQF4.

[Example 4] In Example 1, the position detection probe electrode 103 was used to detect the amount of variation in the thickness direction (Z direction) of the recording medium. That is, when the position detection probe electrode 103 is scanned according to the pattern shown in FIG. 4, the tunnel current changes periodically in accordance with the arrangement of the gold atoms, but after removing this periodic component with a filter, the tunnel current becomes the reference. Z increases or decreases by more than 300 pA from the initial average of 1 nA
The distance between the probe electrode 103 and the gold electrode substrate 104 was adjusted as needed using the axial fine movement control mechanism 107 and the servo circuit 108. At this time, the distance between the recording/reproducing probe electrode 102 and the gold electrode substrate 104 was also adjusted to be electrically equivalent. The above Z-direction displacement correction was performed in all steps of recording, reproducing, and erasing information. As a result, during playback, the pit error rate was reduced to 4x10-' when the data transfer rate was IMbps.

Although various methods for producing recording media have been described in the embodiments described above, any film-forming method that can produce an extremely uniform film may be used, and the present invention is not limited to the methods in the embodiments.

Further, the number of probe electrodes is not limited to two, and a larger number of probe electrodes may be used as necessary.

Further, the scanning pattern of the probe electrode, the period of recording pits, etc. are not limited to those of this embodiment, and any method or structure may be used as long as the recording position is uniquely determined with respect to the position coordinates.

〔Effect of the invention〕

■Disclosed a completely new information processing method that enables much higher density recording than optical recording.

■A new recording medium that can use the above-mentioned new information processing method has been disclosed.

■Since the atomic arrangement of the crystalline substrate is used to set recording bits or recording bit strings at positions corresponding to the atomic arrangement, it is possible to reduce positional errors when recording and reproducing information, resulting in pit errors. I was able to reduce the rate.

■As a result of separating the probe electrodes that detect the atomic arrangement of the substrate from the probe electrodes used for recording, reproducing, and erasing information, the probability that position information and recorded information will be confused is significantly reduced, and - Increased playback speed.

■We showed that information can be recorded and reproduced more reliably by adding a probe electrode that detects variations in the thickness direction of the substrate.

[Brief explanation of drawings]

FIGS. 1 and 2 are principle diagrams showing the positional relationship between the coordinate axes and recording positions of the present invention. FIG. 3 is a block diagram schematically showing the information processing apparatus of the present invention. FIG. 4 is a schematic diagram showing one form of the positional relationship between the coordinate axes on the surface of the recording medium and the recording position according to the present invention. FIG. 5 is a diagram showing the waveform of an electric pulse necessary for forming an ON state in a recording layer that is in an OFF state according to the present invention. FIG. 6 is a diagram showing the waveform of an electric pulse necessary to return an ON state portion on the recording layer to an OFF state according to the present invention. Vibrant shaft lock comb only! Dust Axis Change Confirmed Blood Summer Danxia No. 8, No. 2 Ward e) Currency

Claims (32)

[Claims] (1) For a recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in the plane, a plurality of probe electrodes are used, and at least one probe electrode (first probe electrode) is used. Detecting a position on the periodic structure of the electrode substrate through the recording layer, and using at least one probe electrode (second probe electrode) at an arbitrary set position on the recording layer corresponding to the detected position. An information processing method characterized by recording information on a recording layer, reproducing recorded information, or erasing recorded information. (2) The information processing method according to claim (1), wherein the periodic structure of the electrode substrate is a structure based on an atomic arrangement. (3) The information processing method according to claim (1), wherein a bias voltage is applied between the first probe electrode and the electrode substrate and between the second probe electrode and the electrode substrate. (4) The information processing method according to claim (3), wherein the bias voltage applied between the first probe electrode and the substrate is different from the bias voltage applied between the second probe electrode and the electrode substrate. . (5) The information according to claim (3), wherein the bias voltage applied between the first probe electrode and the electrode substrate is smaller than the bias voltage applied between the second probe electrode and the electrode substrate. Processing method. (6) The information processing method according to claim (1), wherein information is recorded and erased by applying a pulse voltage between the second probe electrode and the electrode substrate. (7) The information processing method according to claim (6), wherein the pulse voltage is a voltage exceeding a threshold voltage that changes the conductivity of the recording layer. (8) For a recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in the plane, a plurality of probe electrodes are used, and at least one probe electrode (first probe electrode) is used. Detecting a position on the periodic structure of the electrode substrate through the recording layer and recording using at least one probe electrode (second probe electrode) at an arbitrary set position on the recording layer corresponding to the detected position. Recording information on the layer, reproducing the recorded information, or erasing the recorded information, and using at least one probe electrode (third probe electrode) to connect the probe electrode and the recording medium. An information processing method comprising: detecting a relative positional variation in distance; and adjusting the distance between a second probe electrode and a recording medium surface based on the positional variation. (9) The information processing method according to claim (8), wherein the periodic structure of the electrode substrate is a structure based on an atomic arrangement. (10) A bias voltage is applied between the first probe electrode and the electrode substrate, between the second probe electrode and the electrode substrate, and between the third probe electrode and the electrode substrate (
The information processing method described in 8). (11) The information processing according to claim (10), wherein the bias voltage applied between the first probe electrode and the electrode substrate is different from the bias voltage applied between the second probe electrode and the electrode substrate. Method. (12) Claim (10) wherein the bias voltage applied between the first probe electrode and the electrode substrate is smaller than the bias voltage applied between the second probe electrode and the electrode substrate.
) Information processing method described in . (13) The information processing according to claim (10), wherein the bias voltage applied between the second probe electrode and the electrode substrate is different from the bias voltage applied between the third probe electrode and the electrode substrate. Method. (14) Claim (10) wherein the bias voltage applied between the third probe electrode and the electrode substrate is smaller than the bias voltage applied between the second probe electrode and the electrode substrate.
) Information processing method described in . (15) The information processing method according to claim (8), wherein the first probe electrode also serves as a third probe electrode. (16) The information processing method according to claim (8), wherein information is recorded and erased by applying a pulse voltage between the second probe electrode and the electrode substrate. (17) The information processing method according to (16), wherein the pulse voltage is a voltage exceeding a threshold voltage that changes the conductivity of the recording layer. (18) A recording medium in which a recording layer is provided on an electrode substrate having a regular periodic structure in a plane, and a plurality of probe electrodes arranged at positions facing the recording medium, of which at least one probe electrode is provided. means for detecting a position on the periodic structure of the electrode substrate via the recording layer using a first probe electrode; Information characterized by comprising means for recording information on a recording layer using a probe electrode (second probe electrode), reproducing recorded information, or erasing recorded information. Processing equipment. (19) The information processing device according to claim (18), wherein the periodic structure of the electrode substrate is a structure based on an atomic arrangement. (20) Between the first probe electrode and the electrode substrate and the second
19. The information processing device according to claim 18, wherein a bias voltage is applied between the probe electrode and the electrode substrate. (21) Claim (20) wherein the bias voltage applied between the first probe electrode and the electrode substrate is different from the bias voltage applied between the second probe electrode and the electrode substrate.
The information processing device described in . (22) Claim (20) wherein the bias voltage applied between the first probe electrode and the electrode substrate is smaller than the bias voltage applied between the second probe electrode and the electrode substrate.
). (23) The information processing device according to claim (18), further comprising means for applying a pulse voltage between the second probe electrode and the electrode substrate. (24) A recording medium having a recording layer provided on an electrode substrate having a regular periodic structure in a plane, and a plurality of probe electrodes arranged at positions facing the recording medium, of which at least one probe electrode is provided. (a first probe electrode) to detect a position on the periodic structure of the electrode substrate via the recording layer; at least one probe at an arbitrary set position on the recording layer corresponding to the detected position; means for recording information on the recording layer using an electrode (second probe electrode), reproducing recorded information, or erasing recorded information; a means for detecting the amount of variation in the distance between the probe electrode and the recording medium using the second probe electrode) and a means for adjusting the distance between the second probe electrode and the surface of the recording medium based on the amount of variation. An information processing device characterized by: (25) The information processing device according to claim (24), wherein the periodic structure of the electrode substrate is a structure based on an atomic arrangement. (26) A bias voltage is applied between the first probe electrode and the electrode substrate, between the second probe electrode and the electrode substrate, and between the third probe electrode and the electrode substrate (
24). (27) The information processing according to claim (26), wherein the bias voltage applied between the first probe electrode and the electrode substrate is different from the bias voltage applied between the second probe electrode and the electrode substrate. Device. (28) Claim (26) wherein the bias voltage applied between the first probe electrode and the electrode substrate is smaller than the bias voltage applied between the second probe electrode and the electrode substrate.
). (29) Claim (26) wherein the bias voltage applied between the second probe electrode and the electrode substrate is different from the bias voltage applied between the third probe electrode and the electrode substrate.
The information processing device described in . (30) Claim (26) wherein the bias voltage applied between the third probe electrode and the electrode substrate is smaller than the bias voltage applied between the second probe electrode and the electrode substrate.
). (31) The information processing device according to claim (24), wherein the first probe electrode also serves as a third probe electrode. (32) The information processing device according to claim (24), further comprising means for applying a pulse voltage between the second probe electrode and the electrode substrate.