JPS63160236A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve the productivity of a semiconductor device by superposing a connecting terminal on an electrode formed at a semiconductor pellet, and bonding it by irradiating the contact with a laser, thereby reducing the occurrence of a product malfunction. CONSTITUTION:A semiconductor pellet 3 formed with a bonding pad 3a is placed on an X-Y stage 1, and positioned at a predetermined position on a vacuum suction hole 2. Then, a lead frame 4 is set, and an inner end 4b bonded with a gold-plating layer 4c of a lead 4a is superposed on the pad 3a. A stage X-Y is suitably moved in this state, the inner end 4b superposed on the pad 4a is sequentially positioned with respect to the optical axes of a laser source 5 and an optical system 6, and bonded by irradiating it with a laser 7 for a predetermined time. Thus, the fixture of a semiconductor pellet to the connecting terminal and an electric connection thereof are simultaneously conducted to reduce a product malfunction and to improve the productivity.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a technology for manufacturing semiconductor devices, and in particular to a technology that is effective when applied to bonding operations between semiconductor pellets and connection terminals in the assembly of semiconductor devices.

[Conventional technology]

Regarding bonding technology in the assembly of semiconductor devices, Kogyo Kenkyukai Co., Ltd., published November 15, 1980,
"Electronic Materials 2. November 1982 Special Issue, P163~
P168゜The outline is that a plurality of leads as connection terminals and tabs attached to the inner ends of these leads are integrally punched out of a predetermined metal plate to form an IJ-deframe. After the semiconductor pellet is mounted on the dove, a bonding wire made of a conductor is installed between each bonding pad of the semiconductor pellet and the inner end of the lead for electrical connection.

[Problem that the invention seeks to solve]

However, the method described above requires the work of mounting the semiconductor pellet on the tab of the lead frame, and the work of installing a bonding wire between the mounted semiconductor pellet and the inner end of the lead for electrical connection. Since each process is performed individually, the process becomes complicated and takes a long time, and different equipment is required for each process.

Furthermore, the bonding wires installed between the semiconductor pellet and the inner end of the lead are generally fine and have low strength, and adjacent bonding wires may short-circuit during transportation to the subsequent sealing process, or resin sealing may occur. During the bonding process, the bonding wire may be swept away by the resin that is press-fitted into the mold, causing product defects.
The inventors have discovered that there are various problems.

An object of the present invention is to provide a semiconductor device manufacturing technique that can simplify processes and reduce product defects, thereby improving productivity.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief overview of typical inventions disclosed in this application is as follows.

That is, the inner end of the connecting terminal is overlapped with the electrode formed on the semiconductor pellet, and the contact area between the inner end of the connecting terminal and the electrode of the semiconductor pellet is irradiated with a laser to join them. .

[Effect]

According to the above-described means, it is possible to simultaneously fix the semiconductor pellet to the connection terminal and make the electrical connection, simplifying the manufacturing process, and connecting the relatively strong connection terminal to the semiconductor pellet. Therefore, short circuits and deformation of the connection terminals caused by external forces or the like are avoided, and the occurrence of product defects is reduced, resulting in improved productivity in the manufacture of semiconductor devices.

〔Example〕

FIG. 1 is an explanatory diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

A vacuum suction hole 2 is provided in an X-Y stage 1 that is movable within a predetermined plane.
The structure is such that the posture of the semiconductor pellet 3 placed on and positioned is maintained stably.

A lead frame 4 held by a transport mechanism (not shown) is set on the X-Y stage l, and the inner ends 4b of the plurality of leads 4a (connection terminals) of the lead frame 4 are set on the X-Y stage l.
are positioned so as to overlap and contact a plurality of bonding pads 3a (electrodes) provided on the upper surface of the semiconductor pellet 3, respectively.

For example, a gold plating layer 4C is applied to a portion of the inner end 4b of the lead 4a that contacts the bonding pad 3a of the semiconductor pellet 3, and the inner end 4b of the lead 4a is connected to the semiconductor via this gold plating layer 4C. It is configured so that the pellet 3 is brought into contact with the pounding pad 3a.

Furthermore, a laser source 5 whose axis is substantially perpendicular to the X-Y stage 1 is provided above the X-Y stage 1, and a laser source 5 is provided with a laser source 5, which is focused through a predetermined optical system 6. The laser 7 is applied to the bonding pad 3a of the semiconductor pellet 3.
The inner end portion 4b of the lead 4a, which overlaps with and contacts the inner end portion 4b of the lead 4a, is irradiated with the inner end portion 4b.

Then, the inner ends 4b of the leads 4a that overlap and contact the bonding pads 3a of the semiconductor pellet 3 are irradiated with the thermal energy of the laser and the laser 7, and the leads 4a are brought into contact through the gold plating layer 4c. The inner end portion 4b and the bonding pad 3a of the semiconductor pellet 3 are bonded to each other.

The operation of this embodiment will be explained below.

First, a semiconductor pellet 3 is placed on the x-y stage 1 with the surface on which the plurality of bonding pads 3a are formed facing upward.
is placed and positioned at a predetermined position above the vacuum suction hole 2 by a positioning mechanism (not shown) or the like.

Thereafter, the lead frame 4 held by a transport mechanism (not shown) is set on the X-Y stage 1, and each of the inner ends 4b of the plurality of leads 4a is connected to the plurality of bonding pads 3a of the semiconductor pellet 3. Superimposed on top of each other.

In this state, for example, the X-Y stage 1 is moved appropriately, and the inner ends 4b of the plurality of leads 4a overlap with the plurality of bonding pads 3a of the semiconductor pellet 3 with respect to the optical axis of the laser source 5 and the optical system 6. By sequentially positioning the leads 4a and repeating the operation of irradiating the laser 7 for a predetermined time, each of the inner ends 4b of the plurality of leads 4a is bonded to each of the plurality of bonding pads 3a of the semiconductor pellet 3. and semiconductor bullet 3 seven leads 4
A is electrically connected to the lead frame 4 through a plurality of glued leads 4a having relatively high mechanical strength.
The semiconductor pellet 3 is held against.

Right, multiple bonding pads 3 of semiconductor pellet 3
As a method for positioning the inner end portions 4b of the plurality of leads 4a overlapping with the laser beam 7, as described above,
- Not limited to moving the Y stage 1, for example, the X-Y stage 1 on which the semiconductor pellet 3 and lead frame 4 are placed is kept stationary, and the laser 7 is controlled as appropriate by the optical system 6 interposed in the optical path of the laser 7. By changing the optical path, the laser 7 is sequentially applied to the inner ends 4b of the plurality of leads 4a overlapping the plurality of bonding pads 3a.
may also be irradiated.

Thereafter, the lead frame 4 is withdrawn together with the semiconductor pellet 3 fixed via the plurality of leads 4a to the next sealing process or the like.

As described above, in this embodiment, the lead frame 4 overlaps the plurality of bonding pads 3a of the semiconductor pellet 3 and the plurality of - bonding pads P3a, respectively.
The inner end portions 4b of the plurality of leads 4a are
Since they are bonded via the gold plating layer 4C deposited on the lead frame 4, the work of electrically connecting the plurality of leads 4a and the semiconductor pellet 3 and the work of fixing the semiconductor pellet 3 to the lead frame 4 are simultaneously performed. This simplifies the assembly process.

In addition, since fine bonding wires that are easily deformed by external forces are not used, short circuits between adjacent bonding wires during transportation and flow of resin press-fitted into the mold during the resin sealing process are avoided. Factors that cause product defects, such as deformation of the bonding wire due to this, are eliminated, and product yield can be improved.

In this way, the following effects can be obtained in this embodiment.

(1) The plurality of bonding pads 3a of the semiconductor pellet 3 and the inner end portions 4b of the plurality of leads 4a of the lead frame 4 overlapping the plurality of bonding pads 3a are exposed to thermal energy etc. due to the irradiation of the laser 7. Since the leads 4a are bonded via the gold plating layer 4C applied to the inner end 4b of the lead 4a, it is necessary to electrically connect the plurality of leads 4a and the semiconductor pellet 3, and to connect the semiconductor pellet 3 to the lead frame 4. This simplifies the assembly process, and because it does not use fine bonding wires that are easily deformed by external forces, the bonding wires that are adjacent to each other during transportation are Factors that cause product defects, such as short circuits between the bonding wires and deformation of the bonding wires due to the flow of resin press-fitted into the mold during the resin sealing process, are eliminated, and the yield of products can be improved.

(2) As a result of (1) above, productivity in the assembly process in manufacturing semiconductor devices is improved.

Although the invention made by the present inventor has been specifically explained based on the examples above, the present invention is not limited to the front example, and it goes without saying that various changes can be made without departing from the gist of the invention. Nor.

For example, the inner end 14b of the lead 4a and the semiconductor pellet 3
The substance interposed between the bonding pad 3a and the lead 4a is not limited to the gold plating layer 4C deposited on the inner end 4b of the lead 4a, but may also be a paste made by mixing conductor particles with resin or the like. You can.

In the above explanation, the invention made by the present inventor was mainly applied to the manufacturing technology of semiconductor devices, which is the background field of application, but the invention is not limited to this. It can be widely applied to assembly technology, etc.

〔Effect of the invention〕

A brief overview of typical inventions disclosed in this application is as follows.

That is, the inner end of the connecting terminal is overlapped with the electrode formed on the semiconductor pellet, and the contact portion between the inner end of the connecting terminal and the electrode of the semiconductor pellet is irradiated with a laser to bond the connecting terminal. The semiconductor pellet can be fixed to the semiconductor pellet and the electrical connection can be made at the same time, which simplifies the manufacturing process, and since the relatively strong connection terminal is connected to the semiconductor pellet, the connection terminal can be easily fixed due to external force etc. Short circuits and deformations such as these are avoided, and the occurrence of product defects is reduced, resulting in improved productivity in the manufacture of semiconductor devices.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. 1...X-Y stage, 2...vacuum suction hole, 3...
・Semiconductor pellet), 3a...Ponding pad (electrode), 4...Lead frame, -m, 4a...Lead (
connection terminal), 4b...inner end, 4C...gold plating layer, 5...laser source, 6...optical system, 7...laser. Agent Patent Attorney Tokuo Ogawa-7〉ゝ＼-

Claims (1)

[Claims] 1. The inner end of the connecting terminal is overlapped with the electrode formed on the semiconductor pellet, and the contact portion between the inner end of the connecting terminal and the electrode of the semiconductor pellet is irradiated with a laser. A method for manufacturing a semiconductor device characterized by bonding. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the inner end of the connecting terminal and the electrode of the semiconductor pellet are bonded by interposing a substance made of a conductor. 3. The semiconductor device according to claim 1, wherein a gold plating layer is deposited on the inner end of the connecting terminal that contacts the electrode of the semiconductor pellet, and the bonding is performed using the gold plating layer as an intermediary. Production method.