JPS63160208A - Slide contactor - Google Patents
Slide contactorInfo
- Publication number
- JPS63160208A JPS63160208A JP61306992A JP30699286A JPS63160208A JP S63160208 A JPS63160208 A JP S63160208A JP 61306992 A JP61306992 A JP 61306992A JP 30699286 A JP30699286 A JP 30699286A JP S63160208 A JPS63160208 A JP S63160208A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- sliding contact
- contact
- pattern
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
- Adjustable Resistors (AREA)
- Manufacture Of Switches (AREA)
- Contacts (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、計測器、各種機械等で、検出用、制御用、設
定用、発振器用などに使用されているボリュームスイッ
チ、ポテンシオメータ、トリマー（可変抵抗器の一種）
等で用いられる摺動接点装置の改良に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention is applicable to volume switches, potentiometers, and trimmers used for detection, control, setting, oscillators, etc. in measuring instruments, various machines, etc. (a type of variable resistor)
This paper relates to improvements to sliding contact devices used in, etc.
（従来の技術とその問題点）
従来より上記のボリュームスイッチ、ポテンシオメータ
、トリマー等で用いられる摺動接点装置は、セラミック
ス基板上にカーボン（Ｃ）や酸化ルテニウム（Ｒｕｎｇ
）などの抵抗ペーストを焼成して厚膜抵抗パターンを形
成して成る配線板と、この配線板の厚膜抵抗パターンに
対向して摺動し得るようになされたスプリング端子材に
Ａｇ接点材をかしめ或いは溶接して成るすり接点とによ
り構成されているが、この摺動接点装置は、ノイズが発
生し易く、又接触抵抗がやや高く且つ幾分ばらつきがあ
って不安定であり、しかも摩耗し易くて寿命が短く、接
触信頼性にやや欠けるものであった。(Prior art and its problems) Sliding contact devices conventionally used in the above-mentioned volume switches, potentiometers, trimmers, etc. are made of carbon (C) or ruthenium oxide (Rung oxide) on a ceramic substrate.
), etc., to form a thick film resistance pattern, and a spring terminal material that can slide against the thick film resistance pattern of this wiring board, and an Ag contact material. These sliding contact devices are constructed with caulked or welded sliding contacts, but these sliding contact devices tend to generate noise, have somewhat high contact resistance, are unstable due to some variation, and are prone to wear. It was easy to use, short-lived, and somewhat lacking in contact reliability.
この為、セラミックス基板上のカーボンや酸化ルテニウ
ムの厚膜抵抗パターンのすり接点と摺動する部分を、Ａ
ｇ−Ｐｄ系の導体ペーストに置き換えて焼成するかある
いは厚膜抵抗パターンのすり接点と摺動する部分にＡｇ
−Ｐｄ系導体ペーストを重ねて焼成することにより、接
触信頼性を改善し、又すり接点のＡｇ接点材を硫化防止
の為、Ａｇ−Ｐｄ３０〜５０ｗｔ％に置き換えている。For this reason, the part that slides with the sliding contact of the carbon or ruthenium oxide thick film resistor pattern on the ceramic substrate is
Either replace it with g-Pd-based conductor paste and bake it, or add Ag to the part that slides with the sliding contact of the thick film resistor pattern.
- Contact reliability is improved by stacking and firing Pd-based conductor paste, and the Ag contact material of the sliding contact is replaced with 30 to 50 wt% Ag-Pd to prevent sulfurization.
然し乍ら、厚膜導体パターンと接点材が同種の組合せの
為、容易に凝着、剥離が起こり、摩耗が促進される。又
Ａｇ−Ｐｄ３０〜５０−ｔ％の接点材はＨｖ１６０〜２
００で硬すぎるのに対し、Ａｇ−Ｐｄ系の導体ペースト
の焼成物であるＷ−膜導体パターンが軟らかい為、摩耗
が多くなり、早期に寿命となる。更にＡｇ−Ｐｄ３０〜
５０ｗｔ％接点材は、電気伝導度（ＩＡＣ３３，８〜５
．５）が低い為、発熱する等の問題点があった。However, since the thick film conductor pattern and the contact material are the same type of combination, adhesion and peeling easily occur, accelerating wear. Also, the contact material of Ag-Pd 30-50-t% has Hv160-2.
00 is too hard, whereas the W-film conductor pattern, which is a fired product of Ag--Pd-based conductor paste, is soft, resulting in increased wear and premature end of life. Furthermore, Ag-Pd30~
The 50wt% contact material has an electrical conductivity (IAC33,8~5
．． 5), there were problems such as heat generation.
（発明の目的）
本発明は、上記問題点を解決することのできる摺動接点
装置を提供することを目的とするものである。(Object of the Invention) An object of the present invention is to provide a sliding contact device that can solve the above problems.
（問題点を解決するための手段）
前記の問題点を解決するための本発明の摺動接点装置は
、セラミックス基板上に、抵抗ペーストを焼成して厚膜
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てＡｇ−Ｐｔ系導体ペーストを焼成して厚膜導体パター
ンを形成して成る配線板と、この配線板の厚膜導体パタ
ーンに対向して摺動し得るようになされＡｇ−Ｃｕ３〜
１（ｂｖｔ％−Ｃｄ０．５〜５ｗｔ％の接点材がスプリ
ング端子材に取付けられて成るすり接点とにより構成さ
れていることを特徴とする。(Means for Solving the Problems) A sliding contact device of the present invention for solving the above-mentioned problems includes forming a thick film resistance pattern by firing a resistance paste on a ceramic substrate, and forming a thick film resistance pattern on a ceramic substrate. A wiring board formed by connecting to a resistance pattern and forming a thick film conductor pattern by firing an Ag-Pt based conductor paste, and an Ag- Cu3～
1 (bvt%-Cd0.5 to 5wt%) and a sliding contact formed by attaching a contact material to a spring terminal material.
本発明の摺動接点装置に於いて、すり接点の接点材をＡ
ｇ−Ｃｕ３〜１０ｗｔ％−Ｃｄ ０．５〜５ ｗｔ％と
した理由は、Ａｇ中のＣｕが３−ｔ％、或いはＣｄ０．
５ｗｔ％未満だと潤滑効果が薄く、そのすり接点がセラ
ミックス基板上のＡｇ−Ｐ を系の厚膜導体パターンと
の接触に於いて凝着、剥離が生じ、Ｃｕが１０−ｔ％或
いはＣｄが５ｗｔ％を超えると、ノイズの発生原因とな
るからである。In the sliding contact device of the present invention, the contact material of the sliding contact is A
g-Cu3-10 wt%-Cd 0.5-5 wt% is because Cu in Ag is 3-t% or Cd0.
If it is less than 5 wt%, the lubricating effect will be weak, and the sliding contact will cause adhesion and peeling of Ag-P on the ceramic substrate when it comes into contact with the thick film conductor pattern. This is because if it exceeds 5 wt%, it will cause noise generation.
（作用）
上記の如く構成された摺動接点装置は、すり接点とセラ
ミックス基板上の厚膜導体パターンとの接触作用におい
て、すり接点のＡｇ−Ｃｄ１ｗｔ％Ｃｄ ０．５〜５
ｗｔ％ｔ％材の硬さくＩＩ・ｖｌｌＯ〜１５０）が軟ら
かく滑りやすいので、接触抵抗が低く安定していて、Ａ
ｇ−Ｐｔ系厚膜導体パターンを損耗することが無く、又
凝着、剥離が殆んど無くなり、摩耗が減少するので、良
好な接触が得られる。更にすり接点のＡｇ−Ｃｕ３〜１
０ｗｔ％−Ｃｄ０．５〜５ｉｖｔ％接点材の電気伝導度
がｌＡＣ３４０〜６０％と良好であるので、発熱しない
。(Function) In the sliding contact device configured as described above, in the contact action between the sliding contact and the thick film conductor pattern on the ceramic substrate, the sliding contact has an Ag-Cd1wt%Cd of 0.5 to 5.
The hardness of the wt%t% material II・vllO~150) is soft and slippery, so the contact resistance is low and stable.
Since the g-Pt thick film conductor pattern is not worn out, adhesion and peeling are almost eliminated, and wear is reduced, good contact can be obtained. Furthermore, Ag-Cu3-1 of the sliding contact
Since the electrical conductivity of the 0wt%-Cd0.5-5ivt% contact material is as good as 340-60% lAC, no heat is generated.
（実施例）
本発明の摺動接点装置の実施例を説明すると、図に示す
如き板厚０．６鰭、直径３０龍の純度９８％のＡ１ｚＯ
ｘ基板１上の外周に幅３鶴でＲｕ Ｏｔの抵抗ペースト
をスクリーン印刷し、８００℃で焼成して厚さ１０μの
厚膜抵抗パターン２を形成し、この厚膜抵抗パターン２
に接続して、周方向に、Ａｇ−Ｐｔ３ｗｔ％導体ペース
トをスクリーン印刷し、８００℃で焼成して、０．２Ｂ
間隔に幅０．２ｆｌ、長さ７龍、厚さｌＯμの厚膜導体
パターン３を形成して配線板４とした。一方、この配線
板４の厚膜導体パターン３に対向して夫々摺動するよう
になされた２種のすり接点５は、Ａｇ−Ｃｕ６ｗｔ％−
Ｃｄ２ｗｔ％とＡｇ Ｃｕ８ｗｔ％−Ｃｄ１ｗｔ％−
ニッケル０．１ｗｔ％の２種の接点線材（直径１ 、５
ｕ＋ ）から作製した頭部径３１、頭部厚さ０ 、６
１＋１、置部径１．５龍、脚部長１．５鰭の２種のリベ
ット接点６を、夫々幅４龍、厚さ０．１５ｍｍのＢｅ−
Ｃｕより成るスプリング端子材７の接点取付穴に挿入し
かしめて成るものである。 このように構成された実施
例１．２の摺動接点装置と、Ａ ｇ −Ｐ ｄ３０ｗｔ
％接点材を有するすり接点を配線板のＡ ｇ −Ｐ ｄ
３０ｗｔ％の厚膜導体パターンと対向させて成る従来の
摺動接点装置とを、下記の試験条件にて摺動開閉試験を
行った処、下記の表に示すような結果を得た。(Example) To explain an example of the sliding contact device of the present invention, as shown in the figure, a 98% pure A1zO with a plate thickness of 0.6 fin and a diameter of 30 mm is used.
Screen print a RuOt resistance paste with a width of 3 squares on the outer periphery of the x substrate 1, and bake it at 800°C to form a thick film resistance pattern 2 with a thickness of 10 μm.
Connected to, screen printed Ag-Pt 3wt% conductor paste in the circumferential direction, baked at 800℃, and made 0.2B.
Thick film conductor patterns 3 having a width of 0.2 fl, a length of 7 dragons, and a thickness of lOμ were formed at intervals to form a wiring board 4. On the other hand, the two types of sliding contacts 5, which are made to slide against the thick film conductor pattern 3 of this wiring board 4, are made of Ag-Cu6wt%-
Cd2wt% and Ag Cu8wt%-Cd1wt%-
Two types of contact wires containing 0.1 wt% nickel (diameters 1 and 5
u+) head diameter 31, head thickness 0, 6
1+1, two types of rivet contacts 6 with a mounting part diameter of 1.5 mm and a leg length of 1.5 mm, each with a width of 4 mm and a thickness of 0.15 mm.
It is inserted into a contact mounting hole of a spring terminal material 7 made of Cu and then tightened. The sliding contact device of Example 1.2 configured in this way and A g -P d30wt
A g - P d of a wiring board with a sliding contact having % contact material
A sliding opening/closing test was conducted on a conventional sliding contact device formed by opposing a 30 wt % thick film conductor pattern under the following test conditions, and the results shown in the table below were obtained.
試験条件
接触カニｌＯｇ、動作二回転往復型（５５度）、駆動：
６０ストロ一ク／ｗｉｎ、通電：１２■、１００ｍＡ上
記の表で明らかなように実施例１．２の摺動接点装置は
、従来例の摺動装置に比し、寿命が大概倍増しているこ
とが判る。これはひとえにすり接点５のＡ ｇ −Ｃｕ
３〜１０ｗｔ％−Ｃｄ ０．５〜５ ｗｔ％接点材の
硬さが軟らかく滑りやすい為、対向するＡｇ−Ｐｔ系の
厚膜導体パターン３を損耗することが無く、又凝着、剥
離することが無く、摩耗が減少し、更にＡｇ−Ｃｕ３〜
１０ｗｔ％−ｑｄ０．５〜５ｗｔ％の接点材の電気伝導
度が良好で発熱することが無いからである。Test conditions Contact crab lOg, action 2 rotation reciprocating type (55 degrees), drive:
60 strokes/win, energization: 12■, 100mA As is clear from the table above, the sliding contact device of Example 1.2 has almost double the lifespan compared to the conventional sliding device. I understand that. This is simply the A g -Cu of the sliding contact 5.
3 to 10 wt%-Cd 0.5 to 5 wt% Since the hardness of the contact material is soft and slippery, the opposing Ag-Pt thick film conductor pattern 3 will not be damaged, and will not adhere or peel. No, wear is reduced, and Ag-Cu3~
This is because the electrical conductivity of the contact material of 10wt%-qd0.5 to 5wt% is good and no heat is generated.
尚、前記の寿命は、厚膜導体パターン３の摩耗により、
すり接点５がＡＩ、０．基板との接触となって、オープ
ン状態（接触抵抗無限大）となった場合と、厚膜導体パ
ターン３間のスリット部の目詰まりによりショートした
場合で判定した。Note that the above-mentioned lifespan is due to wear of the thick film conductor pattern 3.
The sliding contact 5 is AI, 0. The judgment was made based on the case where the contact with the substrate resulted in an open state (infinite contact resistance) and the case where a short circuit occurred due to clogging of the slit between the thick film conductor patterns 3.
尚、上記実施例の摺動接点装置の配線板４は円形である
が、矩形でも良いものである。その場合、厚膜抵抗パタ
ーンは矩形の配線板の一側端に形成し、厚１ｆｔ！導体
パターンは厚膜抵抗パターンに接続してその長手方向に
一定間隔に平行に形成すると良い。そしてすり接点は厚
膜導体パターンに対向して厚膜抵抗パターンの長手方向
に摺動し得るようにする。またセラミックス基板上にベ
ローズ形状に前後に往復させた厚膜抵抗パターンを形成
し、その上に厚膜導体パターンを一定間隔に並べて形成
した配線板と、この配線板の厚膜導体パターンに対向し
て摺動するようにしたすり接点とより成る摺動接点装置
としても良い。Although the wiring board 4 of the sliding contact device in the above embodiment is circular, it may also be rectangular. In that case, the thick film resistor pattern is formed on one end of a rectangular wiring board and has a thickness of 1 ft! The conductor pattern is preferably connected to the thick film resistor pattern and formed parallel to the thick film resistor pattern at regular intervals in its longitudinal direction. The sliding contact is slidable in the longitudinal direction of the thick film resistor pattern, facing the thick film conductor pattern. In addition, a thick film resistor pattern is formed on a ceramic substrate in a bellows shape and reciprocated back and forth, and a wiring board is formed on which thick film conductor patterns are arranged at regular intervals, and the wiring board faces the thick film conductor pattern. It is also possible to use a sliding contact device consisting of a sliding contact that is slidable.
さらに実施例２のようにＣｕ或いはＣｄの一部を０．０
１〜１ｗｔ％の範囲で鉄族元素で置き換えてもよいもの
である。Furthermore, as in Example 2, a part of Cu or Cd was added to 0.0
It may be replaced with an iron group element in a range of 1 to 1 wt%.
（発明の効果）
以上の説明で判るように本発明の摺動接点装置は、すり
接点のＡｇ−Ｃｕ３〜１０ｗｔ％−Ｃｄ０．５〜５４％
が硬さくＨｖｌｌＯ〜１５０）が軟らかく滑りやすいの
で、接触作用においてセラミックス基板上のＡｇ−Ｐｔ
系厚膜導体パターンが損耗することが無く、又凝着、剥
離が殆んど無くなり、摩耗が減少するので、良好な接触
が得られる。(Effects of the Invention) As can be seen from the above explanation, the sliding contact device of the present invention has a sliding contact of Ag-Cu3-10wt%-Cd0.5-54%.
is hard and HvllO ~ 150) is soft and slippery, so Ag-Pt on the ceramic substrate in contact action.
Good contact can be obtained because the thick film conductor pattern is not worn out, adhesion and peeling are almost eliminated, and wear is reduced.
従って、接触信頼性が向上し、摺動接点装置の寿命が著
しく増長する。更にすり接点のＡｇ Ｃｕ３〜ｌ０ｗ
ｔ％−Ｃｄ０．５〜５ｅｖｔ％接点材の電気伝導度が良
好であるので、接触作用において、発熱せず、溶着が起
こりにくい、従って、摺動接点装置の耐溶着性が著しく
向上する。Therefore, the contact reliability is improved and the life of the sliding contact device is significantly extended. Furthermore, Ag Cu3~l0w of the sliding contact
Since the electrical conductivity of the t%-Cd0.5-5evt% contact material is good, no heat is generated during contact action, and welding is less likely to occur.Therefore, the welding resistance of the sliding contact device is significantly improved.
図は本発明の摺動接点装置の一実施例を示す概略斜視図
である。The figure is a schematic perspective view showing an embodiment of the sliding contact device of the present invention.
Claims (1)
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てＡｇ−Ｐｔ系導体ペーストを焼成して厚膜導体パター
ンを形成して成る配線板と、この配線板の厚膜導体パタ
ーンに対向して摺動し得るようになされＡｇ−Ｃｕ３〜
１０ｗｔ％−Ｃｄ０．５〜５ｗｔ％の接点材がスプリン
グ端子材に取り付けられて成るすり接点とにより構成さ
れていることを特徴とする摺動接点装置。A wiring board formed by firing a resistor paste to form a thick film resistor pattern on a ceramic substrate, and connecting to the thick film resistor pattern and firing an Ag-Pt based conductor paste to form a thick film conductor pattern. , Ag-Cu3~ is made to be able to slide against the thick film conductor pattern of this wiring board.
A sliding contact device comprising a contact material of 10 wt% - 0.5 to 5 wt% of Cd and a sliding contact formed by attaching a contact material to a spring terminal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61306992A JPS63160208A (en) | 1986-12-23 | 1986-12-23 | Slide contactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61306992A JPS63160208A (en) | 1986-12-23 | 1986-12-23 | Slide contactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63160208A true JPS63160208A (en) | 1988-07-04 |
Family
ID=17963711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61306992A Pending JPS63160208A (en) | 1986-12-23 | 1986-12-23 | Slide contactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63160208A (en) |
-
1986
- 1986-12-23 JP JP61306992A patent/JPS63160208A/en active Pending
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| JPS63274111A (en) | Slide contact device | |
| JPS63318713A (en) | Sliding contact device | |
| JPS63274110A (en) | Slide contact device | |
| JPS63152107A (en) | Sliding contactor | |
| JPS63160310A (en) | Slide contactor | |
| JPS63274107A (en) | Slide contact device |