JPS63314812A - Sliding contact device - Google Patents

Sliding contact device

Info

Publication number
JPS63314812A
JPS63314812A JP15168087A JP15168087A JPS63314812A JP S63314812 A JPS63314812 A JP S63314812A JP 15168087 A JP15168087 A JP 15168087A JP 15168087 A JP15168087 A JP 15168087A JP S63314812 A JPS63314812 A JP S63314812A
Authority
JP
Japan
Prior art keywords
thick film
pattern
sliding contact
contact
sliding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15168087A
Other languages
Japanese (ja)
Inventor
Shigeo Mizukami
水上 繁夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP15168087A priority Critical patent/JPS63314812A/en
Publication of JPS63314812A publication Critical patent/JPS63314812A/en
Pending legal-status Critical Current

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  • Contacts (AREA)
  • Details Of Resistors (AREA)

Abstract

PURPOSE:To improve the reliability of contacting, and lengthen remarkably the working life of a sliding contact device, by using Ag-Mo of 10-50wt.% for slide contact material fixed on a spring terminal member. CONSTITUTION:A wiring pattern 4 is constituted by arranging an RuO2 thick film resistance pattern 2, and an Au thick film pattern 3 having a specified interval and length, on an Al2O3 substrate 1. For the contact wire material 6 of a moving contact 5 sliding on the Au pattern 3, Ag-Mo of 10-50wt.% is used. The hardness of this material is about Hv 80-140, and the material is soft and easy to slide. Therefore, in the case of contacting action, a conductor pattern of the Au system thick film on the ceramic substrate is prevented from abrading, cohering and exfoliating, so that the reliability of contacting is improved and the working life of the device is remarkably lengthened.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、計測器、各種機械等で、検出用、制御用、設
定用、発振器用などに使用されているボリュームスイッ
チ、ポテンシオメータ、トリマー(可変抵抗器の一種)
等で用いられる摺動接点装置の改良に関する。
Detailed Description of the Invention (Field of Industrial Application) The present invention applies to volume switches, potentiometers, and trimmers used for detection, control, setting, oscillators, etc. in measuring instruments, various machines, etc. (a type of variable resistor)
This paper relates to improvements to sliding contact devices used in, etc.

(従来の技術とその問題点) 従来より上記のボリュームスイッチ、ポテンシオメータ
、トリマー等で用いられる摺動接点装置は、セラミック
ス基板上にカーボン(C)や酸化ルテニウム(Rung
)などの抵抗ペーストを焼成して厚膜抵抗パターンを形
成して成る配線板と、この配線板の厚膜抵抗パターンに
対向して摺動し得るようになされたスプリング端子材に
Ag接点材をかしめ或いは溶接して成るすり接点とによ
り構成されているが、この摺動接点装置は、ノイズが発
生し易く、又接触抵抗がやや高(且つ幾分ばらつきがあ
って不安定であり、しかも摩耗し易くて寿命が短く、接
触信頼性にやや欠けるものであった。
(Prior art and its problems) Sliding contact devices conventionally used in the above-mentioned volume switches, potentiometers, trimmers, etc. are made of carbon (C) or ruthenium oxide (Rung oxide) on a ceramic substrate.
), etc., to form a thick film resistance pattern, and a spring terminal material that can slide against the thick film resistance pattern of this wiring board, and an Ag contact material. The sliding contact device is constructed with a caulked or welded sliding contact, but this sliding contact device tends to generate noise, has a rather high contact resistance (and is unstable due to some variation, and is prone to wear). It was easy to contact, had a short lifespan, and was somewhat lacking in contact reliability.

この為、セラミックス基板上のカーボンや酸化ルテニウ
ムの厚膜抵抗パターンのすり接点と摺動する部分を、A
g−Pd系の導体ペーストに置き換えて焼成するかある
いは厚膜抵抗パターンのすり接点と摺動する部分にAg
−Pd系導体ペーストを重ねて焼成することにより、接
触信頼性を改善し、又すり接点のAg接点材を硫化防止
の為、Ag−Pd30〜50wt%に置き換えている。
For this reason, the part that slides with the sliding contact of the carbon or ruthenium oxide thick film resistor pattern on the ceramic substrate is
Either replace it with g-Pd-based conductor paste and bake it, or add Ag to the part that slides with the sliding contact of the thick film resistor pattern.
- Contact reliability is improved by stacking and firing Pd-based conductor paste, and the Ag contact material of the sliding contact is replaced with 30 to 50 wt% Ag-Pd to prevent sulfurization.

然し乍ら、厚膜導体パターンと接点材が同種の組合せの
為、容易に凝着、剥離が起こり、摩耗が促進される。又
Ag−Pd30〜50wt%の接点材はHv 160〜
200で硬すぎるのに対し、Ag−Pd系の導体ペース
トの焼成物である厚膜導体パターンが軟らかい為、摩耗
が多くなり、早期に寿命となる。更にAg−Pd30〜
50wt%接点材は、電気伝導度(IACS3.8〜5
.5%)が低い為、発熱する等の問題点があった。
However, since the thick film conductor pattern and the contact material are the same type of combination, adhesion and peeling easily occur, accelerating wear. Also, the contact material of Ag-Pd 30~50wt% has Hv 160~
200 is too hard, whereas the thick film conductor pattern, which is a baked product of Ag-Pd-based conductor paste, is soft, resulting in increased wear and premature end of life. Furthermore, Ag-Pd30~
The 50wt% contact material has an electrical conductivity (IACS3.8-5
.. 5%), there were problems such as heat generation.

(発明の目的) 本発明は、上記問題点を解決することのできる摺動接点
装置を提供することを目的とするものである。
(Object of the Invention) An object of the present invention is to provide a sliding contact device that can solve the above problems.

(問題点を解決するための手段) 前記の問題点を解決するための本発明の摺動接点装置は
、セラミックス基板上に、抵抗ペーストを焼成して厚膜
抵抗パターンを形成し、この厚膜抵抗パターンに接続し
てAu導体ペーストを焼成して厚膜導体パターンを形成
して成る配線板・と、この配線板の厚膜導体パターンに
対向して摺動し得るようになされAg−Mo10〜50
w t%の接点材がスプリング端子材に取付けられて成
るすり接点とにより構成されていることを特徴とする。
(Means for Solving the Problems) A sliding contact device of the present invention for solving the above-mentioned problems includes forming a thick film resistance pattern by firing a resistance paste on a ceramic substrate, and forming a thick film resistance pattern on a ceramic substrate. A wiring board formed by connecting to a resistor pattern and firing an Au conductor paste to form a thick film conductor pattern, and a wiring board configured to be able to slide against the thick film conductor pattern of the wiring board 50
The present invention is characterized in that the contact material of wt% is constituted by a sliding contact formed by being attached to a spring terminal material.

本発明の摺動接点装置に於いて、すり接点の接点材をA
g−MOIO〜50−1%とした理由は、Ag中のMO
が10wt%未満だと潤滑効果が薄く、そのすり接点が
セラミックス基板上のAuの厚膜導体パターンとの接触
に於いて凝着、剥離が生じ、50wt%を超えると、ノ
イズの発生原因となるからである。
In the sliding contact device of the present invention, the contact material of the sliding contact is A
The reason for setting g-MOIO to 50-1% is that MOIO in Ag
If it is less than 10 wt%, the lubricating effect will be weak, and adhesion and peeling will occur when the sliding contact contacts the thick Au conductor pattern on the ceramic substrate, and if it exceeds 50 wt%, it will cause noise. It is from.

(作用) 上記の如く構成された摺動接点装置は、すり接点とセラ
ミックス基板上の厚膜導体パターンとの接触作用におい
て、すり接点のAg−Mo10〜50wt%接点材の硬
さくHV80〜140)が軟らかく滑りやすいので、接
触抵抗が低く安定していて、Au厚膜導体パターンを損
耗することが無く、又凝着、剥離が殆んど無くなり、摩
耗が減少するので、良好な接触が得られる。更にすり接
点のA g −M 。
(Function) In the sliding contact device configured as described above, in the contact action between the sliding contact and the thick film conductor pattern on the ceramic substrate, the hardness of the Ag-Mo 10 to 50 wt% contact material of the sliding contact is HV80 to 140). Since it is soft and slippery, the contact resistance is low and stable, and the Au thick film conductor pattern is not damaged, and there is almost no adhesion or peeling, reducing wear, so good contact can be obtained. . Furthermore, A g −M of the sliding contact.

10〜50wt%接点材の電気伝導度がlAC340〜
60%と良好であるので、発熱しない。
Electrical conductivity of 10-50wt% contact material is lAC340~
Since it is a good 60%, it does not generate heat.

(実施例) 本発明の摺動接点装置の実施例を説明すると、図に示す
如き板厚0.6籠、直径3011の純度98%のA l
 z Os基板1上の外周に幅3鶴でRu Otの抵抗
ペーストをスクリーン印刷し、800℃で焼成して厚さ
10μの厚膜抵抗パターン2を形成し、この厚膜抵抗パ
ターン2に接続して、周方向に、Au導体ペーストをス
クリーン印刷し、800℃で焼成して、0.2鶴間隔に
幅0.2鶴、長さ7龍、厚さlOμの厚膜導体パターン
3を形成して配線板4とした。一方、この配線板4の厚
膜導体パターン3に対向して夫々摺動するようになされ
た2種のすり接点5は、A g −M o20wt%と
Ag  Mo30wt%の2種の接点線材(直径3鶴)
から作製した頭部径31重、頭部厚さ0.6fl、脚部
径1.5龍、脚部長1.5Nの2種のリベット接点6を
、夫々幅4fl、厚さO’、15+uのBe−Cuより
成るスプリング端子材7の接点取付穴に挿入しかしめて
成るものである。
(Example) To explain an example of the sliding contact device of the present invention, as shown in the figure, a 98% pure Al having a plate thickness of 0.6 and a diameter of 3011 mm is used.
A resistor paste of RuOt is screen printed on the outer periphery of the zOs substrate 1 in a width of 3 squares, and baked at 800°C to form a thick film resistor pattern 2 with a thickness of 10μ, and connected to the thick film resistor pattern 2. Then, an Au conductor paste was screen printed in the circumferential direction and fired at 800°C to form a thick film conductor pattern 3 having a width of 0.2 mm, a length of 7 mm, and a thickness of lOμ at 0.2 mm intervals. A wiring board 4 was obtained. On the other hand, the two types of sliding contacts 5, which are slidably opposed to the thick film conductor pattern 3 of the wiring board 4, are made of two types of contact wires (diameter 3 cranes)
Two types of rivet contacts 6 made from It is inserted into a contact mounting hole of a spring terminal material 7 made of Be-Cu and is secured.

このように構成された実施例1.2の摺動接点装置と、
A g −P d30wt%接点材を有するすり接点を
配線板のAg−Pd30%1t%の厚膜導体パターンと
対向させて成る従来の摺動接点装置とを、下記の試験条
件にて摺動開閉試験を行った処、下記の表に示すような
結果を得た。
The sliding contact device of Example 1.2 configured in this way,
A conventional sliding contact device consisting of a sliding contact having a contact material of 30 wt% Ag-Pd and a thick film conductor pattern of 30% 1t% Ag-Pd on a wiring board was subjected to sliding opening and closing under the following test conditions. When the test was conducted, the results shown in the table below were obtained.

試験条件 接触カニ10g、動作二回転往復型(55度)、駆動二
60ストローク/ m i n %通電:12■、10
0mA上記の表で明らかなように実施例1.2の摺動接
点装置は、従来例の摺動装置に比し、寿命が大概倍増し
ていることが判る。これはひとえにすり接点5のAg−
MOIO〜50wt%接点材の硬さが軟らかく滑りやす
い為、対向するAuの厚膜導体パターン3を損耗するこ
とが無(、又凝着、剥離することが無く、摩耗が減少し
、更にAg−Mo10〜50wt%の接点材の電気伝導
度が良好で発熱することが無いからである。
Test conditions Contact crab 10g, operation 2 rotation reciprocating type (55 degrees), drive 2 60 strokes/min% energization: 12■, 10
0 mA As is clear from the table above, the sliding contact device of Example 1.2 has a lifespan almost twice as long as that of the conventional sliding contact device. This is just the Ag- of the sliding contact 5.
MOIO~50wt% Since the hardness of the contact material is soft and slippery, there is no damage to the opposing Au thick film conductor pattern 3 (and there is no adhesion or peeling, reducing wear. This is because the contact material containing 10 to 50 wt% Mo has good electrical conductivity and does not generate heat.

尚、前記の寿命は、厚膜導体パターン3の摩耗により、
すり接点5が/1z03基板との接触となって、オープ
ン状B(接触抵抗無限大)となった場合と、厚膜導体パ
ターン3間のスリット部の目詰まりによりショートした
場合で判定した。
Note that the above-mentioned lifespan is due to wear of the thick film conductor pattern 3.
The judgment was made based on the case where the sliding contact 5 came into contact with the /1z03 substrate and became an open state B (infinite contact resistance), and the case where a short circuit occurred due to clogging of the slit between the thick film conductor patterns 3.

尚、上記実施例の摺動接点装置の配線板4は円形である
が、矩形でも良いものである。その場合、厚膜抵抗パタ
ーンは矩形の配線板の一例端に形成し、厚膜導体パター
ンは厚膜抵抗パターンに接続してその長手方向に一定間
隔に平行に形成すると良い。そしてすり接点は厚膜導体
パターンに対向して厚膜抵抗パターンの長手方向に摺動
し得るようにする。またセラミックス基板上にベローズ
形状に前後に往復させた厚膜抵抗パターンを形成し、そ
の上に厚膜導体パターンを一定間隔に並べて形成した配
線板と、この配線板の厚膜導体パターンに対向して摺動
するようにしたすり接点とより成る摺動接点装置として
も良い。
Although the wiring board 4 of the sliding contact device in the above embodiment is circular, it may also be rectangular. In that case, the thick film resistor pattern is preferably formed at one end of a rectangular wiring board, and the thick film conductor patterns are preferably connected to the thick film resistor pattern and formed parallel to it at regular intervals in its longitudinal direction. The sliding contact is slidable in the longitudinal direction of the thick film resistor pattern, facing the thick film conductor pattern. In addition, a thick film resistor pattern is formed on a ceramic substrate in a bellows shape and reciprocated back and forth, and a wiring board is formed on which thick film conductor patterns are arranged at regular intervals, and the wiring board faces the thick film conductor pattern. It is also possible to use a sliding contact device consisting of a sliding contact that is slidable.

(発明の効果) 以上の説明で判るように本発明の摺動接点装置は、すり
接点のAg−酸化すず6〜12wt%が硬さくHV80
〜140)が軟らかく滑りやすいので、接触作用におい
てセラミックス基板上のAu厚膜温体パターンが損耗す
ることが無く、又凝着、剥離が殆んど無くなり、摩耗が
減少するので、良好な接触が得られる。
(Effects of the Invention) As can be seen from the above explanation, the sliding contact device of the present invention has a hardness of 6 to 12 wt% of Ag-tin oxide in the sliding contact and has a hardness of HV80.
~140) is soft and slippery, so the Au thick film hot body pattern on the ceramic substrate is not worn out during contact action, and adhesion and peeling are almost eliminated, reducing wear, so good contact is achieved. can get.

従って、接触信頼性が向上し、摺動接点装置の寿命が著
しく増長する。更にすり接点のAg  M。
Therefore, the contact reliability is improved and the life of the sliding contact device is significantly extended. Furthermore, Ag M is a sliding contact.

10〜50wt%接点材の電気伝導度が良好であるので
、接触作用において、発熱せず、溶着が起こりにくい。
Since the electrical conductivity of the 10-50wt% contact material is good, no heat is generated during contact action, and welding is less likely to occur.

従って、摺動接点装置の耐溶着性が著しく向上する。Therefore, the welding resistance of the sliding contact device is significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の摺動接点装置の一実施例を示す概略斜視図
である。
The figure is a schematic perspective view showing an embodiment of the sliding contact device of the present invention.

Claims (1)

【特許請求の範囲】[Claims] セラミックス基板上に、抵抗ペーストを焼成して厚膜抵
抗パターンを形成し、この厚膜抵抗パターンに接続して
Au導体ペーストを焼成して厚膜導体パターンを形成し
て成る配線板と、この配線板の厚膜導体パターンに対向
して摺動し得るようになされAg−Mo10〜50wt
%の接点材がスプリング端子材に取り付けられて成るす
り接点とにより構成されていることを特徴とする摺動接
点装置。
A wiring board in which a thick film resistor pattern is formed by firing a resistor paste on a ceramic substrate, and a thick film conductor pattern is formed by firing an Au conductor paste connected to the thick film resistor pattern, and this wiring. Ag-Mo10~50wt, made to be able to slide against the thick film conductor pattern of the plate
1. A sliding contact device comprising: a sliding contact in which the contact material is attached to a spring terminal material.
JP15168087A 1987-06-18 1987-06-18 Sliding contact device Pending JPS63314812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15168087A JPS63314812A (en) 1987-06-18 1987-06-18 Sliding contact device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15168087A JPS63314812A (en) 1987-06-18 1987-06-18 Sliding contact device

Publications (1)

Publication Number Publication Date
JPS63314812A true JPS63314812A (en) 1988-12-22

Family

ID=15523906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15168087A Pending JPS63314812A (en) 1987-06-18 1987-06-18 Sliding contact device

Country Status (1)

Country Link
JP (1) JPS63314812A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0377034A (en) * 1989-08-21 1991-04-02 Matsushita Electric Ind Co Ltd Variable wavelength laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0377034A (en) * 1989-08-21 1991-04-02 Matsushita Electric Ind Co Ltd Variable wavelength laser device

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