JPS63160028A - Information recording medium and information recording and erasing method - Google Patents
Information recording medium and information recording and erasing methodInfo
- Publication number
- JPS63160028A JPS63160028A JP61307298A JP30729886A JPS63160028A JP S63160028 A JPS63160028 A JP S63160028A JP 61307298 A JP61307298 A JP 61307298A JP 30729886 A JP30729886 A JP 30729886A JP S63160028 A JPS63160028 A JP S63160028A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording layer
- information recording
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 24
- 230000007704 transition Effects 0.000 claims abstract description 20
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims 3
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 50
- 239000000203 mixture Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- -1 BiF3 Chemical compound 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- KFQMVMSMRNCTET-UWVGGRQHSA-N n-[[(3s,5s)-5-(1,3-thiazolidine-3-carbonyl)pyrrolidin-3-yl]methyl]-1,3-thiazole-4-carboxamide Chemical compound O=C([C@H]1NC[C@H](C1)CNC(=O)C=1N=CSC=1)N1CCSC1 KFQMVMSMRNCTET-UWVGGRQHSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical group O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
工 発明の背景
技術分野
本発明は、情報記録媒体、特にヒートモードの情報記録
媒体と記録および消去方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an information recording medium, particularly a heat mode information recording medium and a recording and erasing method.
先行技術
ヒートモードの情報記録媒体は、媒体と書き込みないし
読み出しヘッドが非接触であるので、記録媒体が摩耗劣
化しないという特徴をもち、このため、種々のヒートモ
ードの記録媒体の開発研究が行われている。Prior art heat mode information recording media have the characteristic that the recording medium does not deteriorate due to wear and tear because there is no contact between the medium and the writing or reading head.For this reason, research and development of various heat mode recording media has been conducted. ing.
このヒートモードの情報記録媒体には大別して、ピット
形成タイプと、いわゆる相転移タイプのものかある。The heat mode information recording medium can be roughly divided into pit formation type and so-called phase change type.
相転移タイプのものは、レーザー等の記録光により、照
射部の記録層に非晶質−結晶質の相転移等を生起させて
情報を記録し、読み出し光で反射率の変化等を検出して
読み出しを行うものである。 そして、ピット形成タイ
プのものに比べて、いわゆるエアーサンドイッチ構造を
とらずに、記録層上に直接、保護層等を設けることがで
きるというメリットがある。The phase transition type records information by causing an amorphous-crystalline phase transition in the recording layer of the irradiated area using recording light such as a laser, and detects changes in reflectance with readout light. It is used for reading data. Moreover, compared to the pit-forming type, there is an advantage that a protective layer or the like can be provided directly on the recording layer without using a so-called air sandwich structure.
このような相転移を利用する記録媒体としては、Ｔｅ酸
化物中にＴｅが分散されているＴｅＯｘや、Ｔｅ、Ｓｅ
などを主体とするカルコゲン系等があり、これらは可逆
的に相転移を生起させることにより、記録、消去可能な
記録層材料である。 このような記録層材料の具体例と
しては例えば、ＴｅＯｘ−Ｇｅ−Ｓｎ系（特開昭５９−
１８５０４８号）、Ｔｅ−３ｅ−Ｓｎ系（信学技報、Ｃ
ＰＭ、８４−１１５Ｐ、７〜１２）等が知られている。Recording media that utilize such a phase transition include TeOx in which Te is dispersed in Te oxide, Te, Se
There are chalcogen-based materials mainly composed of such materials, and these are recording layer materials that can be recorded and erased by causing a reversible phase transition. Specific examples of such recording layer materials include, for example, TeOx-Ge-Sn system (Japanese Patent Application Laid-open No.
185048), Te-3e-Sn system (IEICE Technical Report, C
PM, 84-115P, 7-12), etc. are known.
しかしながら、ＴｅＯｘ系では、記録層を各種の真空成
膜法で設層する際、記録層中の組成、特に膜厚方向の組
成のバラツキが生じる。However, in the TeOx system, when the recording layer is formed by various vacuum deposition methods, variations in the composition in the recording layer, particularly in the direction of the film thickness, occur.
従フて、組成が均一な記録層をえるためには多元蒸着を
せざるをえなく、製造が煩雑になるという問題がある。Therefore, in order to obtain a recording layer with a uniform composition, it is necessary to carry out multiple vapor deposition, which poses a problem in that manufacturing becomes complicated.
さらに、このような多元系材料では、元素数が多く、組
成比の調整が煩雑であるという問題もある。Furthermore, such a multi-element material has a large number of elements, and there is a problem that adjustment of the composition ratio is complicated.
このような問題に対処するために、特開昭６１−１６８
１４２号公報には、記録層をＴｅ−５ｎとし、しかもＴ
ｅを５０〜１００ａｔ％とする旨の提案がなされている
。 これによれば、書き換え可能で、しかも記録層形成
時の積度、手間等の問題が解消でき、性能面においても
すぐれた媒体が得られるとされている。 しかしながら
、このものについても記録層の性能特性、特に結晶化の
速度が小さく、消去スピードが遅いという欠点があり、
特性としては、十分なものであるとはいえず、さらに一
層の改善が望まれている。In order to deal with such problems, Japanese Unexamined Patent Publication No. 61-168
In the publication No. 142, the recording layer is Te-5n, and T
It has been proposed to set e to 50 to 100 at%. According to this, it is said that a medium can be obtained which is rewritable, can solve problems such as lamination and labor during formation of the recording layer, and has excellent performance. However, this also has the drawbacks of the performance characteristics of the recording layer, especially the slow crystallization speed and slow erasing speed.
It cannot be said that the characteristics are sufficient, and further improvement is desired.
■ 発明の目的
本発明の目的は、２元系で新規な記録層の構成で、記録
層に例えば記録光を照射して、非晶質−結晶質の相転移
を生起させて、情報の記録・消去、特に消去を高速度で
しかも安定にくり返し行うことができる情報記録媒体と
、その記録および消去方法を提供することにある。■ Purpose of the Invention The purpose of the present invention is to provide a novel binary recording layer structure in which information can be recorded by irradiating the recording layer with, for example, recording light to cause an amorphous-crystalline phase transition. - It is an object of the present invention to provide an information recording medium on which erasing, especially erasing, can be repeatedly performed at high speed and stably, and a recording and erasing method thereof.
■ 発明の開示 このような目的は、下記の本発明によって達成される。■Disclosure of invention Such objects are achieved by the invention described below.
すなわち、第１の発明は、ＴｅおよびＳｎを含み、Ｓｎ
／（Ｔｅ＋Ｓｎ）の原子比が０．６以上である記録層を
基体上に有することを特徴とする情報記録媒体である。That is, the first invention includes Te and Sn, and Sn
The present invention is an information recording medium characterized by having a recording layer having an atomic ratio of /(Te+Sn) of 0.6 or more on a substrate.
また、第２の発明は、ＴｅおよびＳｎを含み、Ｓ ｎ
／ （Ｔ ｅ ＋ Ｓ ｎ ）の原子比が０．６以上で
あり、このＴｅとＳｎとの総和に対しＧｅ、Ｉｎおよび
Ｔｊ２の１種以上を１０ａｔ％以下含有する記録一層を
基体上に有することを特徴とする情報記録媒体である。Moreover, the second invention includes Te and Sn, and Sn
/ (T e + Sn ) having a recording layer on the substrate having an atomic ratio of 0.6 or more and containing 10 at% or less of one or more of Ge, In and Tj2 with respect to the total of Te and Sn This is an information recording medium characterized by the following.
また、第３の発明は、ＴｅおよびＳｎを含み、Ｓｎ／（
Ｔｅ＋Ｓｎ）の原子比が０．６以上であるか、あるいは
このＴｅとＳｎの総和に対しさらにＧｅ、ＩｎおよびＴ
ｉの１種以上を１０ａｔ％以下含有する記録層を基体上
に有し、基体と記録層の間および／または記録層上にＴ
ａＯ２，Ｖ２Ｏ，、ＴｉＯ：＋ 、５ｉｎ２．５ｉＯ１
Ｂ２０３．５ｂ２０３、Ｂｉ２Ｏ３、ＰｂＯ，Ｔａ２０
５ 、Ｓ ｉ、Ｎ４．Ｔｉ Ｎ、Ｂ ｉ Ｆ ３ 、Ｌ
ｉ Ｆ 、 Ｐ ｂ Ｆ ２ 、 Ｍ ｇ Ｆ ２お
よびＺｎＳからなる群から選ばれた薄膜を有することを
特徴とする情報記録媒体である。Further, the third invention includes Te and Sn, and Sn/(
The atomic ratio of Te+Sn) is 0.6 or more, or Ge, In and T are added to the total of Te and Sn.
A recording layer containing 10 at% or less of one or more of i is provided on the substrate, and T is provided between the substrate and the recording layer and/or on the recording layer.
aO2, V2O,, TiO:+, 5in2.5iO1
B203.5b203, Bi2O3, PbO, Ta20
5, S i, N4. T i N, B i F 3, L
The information recording medium is characterized by having a thin film selected from the group consisting of i F , P b F 2 , M g F 2 and ZnS.
第４の発明は、ＴｅおよびＳｎを含み、Ｓｎ、／（Ｔｅ
＋Ｓｎ）の原子比か０．６以上であるか、あるいはこの
ＴｅとＳｎの総和に対しさらにＧｅ、ＩｎおよびＴｉＬ
の１種以上を１０ａｔ％以下含有する記録層を基体上に
有する情報記録媒体に非晶質−結晶質間の相転移を生起
させて記録および消去を行うことを特徴とする情報記録
および消去方法である。The fourth invention includes Te and Sn, Sn, /(Te
+Sn) is 0.6 or more, or Ge, In and TiL are added to the sum of Te and Sn.
An information recording and erasing method characterized by recording and erasing information by causing an amorphous-crystalline phase transition in an information recording medium having a recording layer on a substrate containing 10 at% or less of one or more of the following: It is.
■ 発明の具体的構成 以下、本発明の具体的構成について、詳細に説明する。■Specific structure of the invention Hereinafter, a specific configuration of the present invention will be explained in detail.
本発明の情報記録媒体は、基体上に記録層を設層するこ
とによって形成される。The information recording medium of the present invention is formed by depositing a recording layer on a substrate.
また、このようなものを２つ用い、互いの記録層を対向
させて一体化することによって構成してもよい。Alternatively, it may be constructed by using two such devices and integrating them with their recording layers facing each other.
ここで、基体としては、カラス、樹脂等からなる平板状
のものである。 記録手段として光を用いる場合は、光
透過率の良いガラスまたは樹脂を用いるのが好ましい。Here, the substrate is a flat plate made of glass, resin, or the like. When using light as a recording means, it is preferable to use glass or resin with good light transmittance.
これにより、基体裏面側からの書き込み、読み出しなど
が実現できる。This allows writing and reading from the back side of the substrate.
なお、本発明では、光照射などによって記録層に熱を加
えたときの蓄熱効果が樹脂に比べて小さいガラスを基体
として用いても、良好な記録が行えるものである。In the present invention, good recording can be performed even when glass, which has a smaller heat storage effect than resin when heat is applied to the recording layer by light irradiation or the like, is used as the substrate.
ガラスは種々のものであってよく、また樹脂としては、
アクリル樹脂、ポリカーボネート樹脂、エポキシ樹脂、
ポリメチルペンテンなどのオレフィン樹脂等が好適であ
る。Glass can be of various types, and resins include:
Acrylic resin, polycarbonate resin, epoxy resin,
Olefin resins such as polymethylpentene are suitable.
また、基体の記録層の形成面には、トラッキング用の溝
が形成されていることが好ましい。Further, it is preferable that tracking grooves are formed on the surface of the base where the recording layer is formed.
溝は直接形成されていても、いわゆる２２法によって形
成されていてもよい。The grooves may be formed directly or by the so-called 22 method.
溝の深さは、λ／ ８ ｎ程度、特にλ／ ７ ｎ〜λ
／ １２ ｎ （ここに、ｎは基板の屈折率である）と
される。 また、溝の巾は、トラック巾程度とされる。The depth of the groove is about λ/8n, especially λ/7n~λ
/ 12 n (where n is the refractive index of the substrate). Further, the width of the groove is approximately the width of a track.
そして、通常、この溝の凹部に位置する記録層を記録ト
ラック部として、書き込み光および読み出し光を基板裏
面側から照射することが好ましい。In general, it is preferable to irradiate the recording layer located in the recessed portion of the groove with write light and read light from the back side of the substrate, using the recording layer as a recording track portion.
このように構成することにより、書き込み感度と読み出
しのＳ／Ｎ比が向上し、しかもトラッキングの制御信号
は大きくなる。With this configuration, the writing sensitivity and the reading S/N ratio are improved, and the tracking control signal is also increased.
基体上にはＴｅとＳｎを含有する記録層が設層される。A recording layer containing Te and Sn is provided on the substrate.
すなわち記録層は、ＴｅおよびＳｎを含み、Ｓｎ／（Ｔ
ｅ＋Ｓｎ）の原子比は、０．６以−ト特に、０．６〜０
．８５である。That is, the recording layer contains Te and Sn, and has a ratio of Sn/(T
The atomic ratio of e+Sn) is 0.6 or more, especially 0.6 to 0.
．． It is 85.
Ｓｎ／（Ｔｅ＋Ｓｎ）の原子比が０．６未満であると、
結晶転移温度Ｔｘが低くなり、記録状態の安定性が悪く
なってしまう。When the atomic ratio of Sn/(Te+Sn) is less than 0.6,
The crystal transition temperature Tx becomes low, and the stability of the recording state deteriorates.
また、この値が０．８５を超えても、結晶転移温度Ｔｘ
が低くなり、記録状態の安定性か悪くなってしまう。Moreover, even if this value exceeds 0.85, the crystal transition temperature Tx
becomes low, and the stability of the recording state deteriorates.
なお、本発明の記録層は、ＴｅおよびＳｎの総和に対し
、ざらにＧｅ、ＩｎおよびＴＡのうちの１種以上を１０
ａｔ％以下含有するとより好ましい結果をつる。Note that the recording layer of the present invention contains roughly one or more of Ge, In, and TA in 10% of the total of Te and Sn.
More favorable results are obtained when the content is at % or less.
これらの添加により、再生信号のＣ／Ｎ比を向上させる
と共にＴｘのコントロールがより幅広く可能となり安定
性をより向上させることができる。 ただし１０ａｔ％
より多量の添加は消去スピードの低下を招く。 これら
の添加雀としては１〜５ａｔ％が好適である。These additions improve the C/N ratio of the reproduced signal, and also make it possible to control Tx more broadly, thereby further improving stability. However, 10at%
Addition of a larger amount leads to a decrease in erasing speed. The amount of these additives is preferably 1 to 5 at%.
この他、場合によっては、Ｓｂ、Ｂｉ、Ａｓ、Ｓｅ、Ｓ
、Ｔａ、Ｓｉ、０等を２ａｔ％以下含有してもよい。In addition, Sb, Bi, As, Se, S
, Ta, Si, 0, etc., in an amount of 2 at% or less.
このような記録層は、蒸着法、スパッタ法、イオンブレ
ーティング法等のドライコーティング方式等を用いて設
層すればよい。Such a recording layer may be formed using a dry coating method such as a vapor deposition method, a sputtering method, an ion blating method, or the like.
記録層の厚さはｏ、ｏｏｓ戸〜１−程度である。The thickness of the recording layer is approximately 0.00 to 1.0 mm.
また、必要に応じて基体と記録層の間および／または記
録層上に、Ｔ ｅ Ｏ２、Ｖ ２０３、ＴｉＯ２，５ｉ
ｎ２．５ｉＯ１Ｂ２０３．５ｂ２０３、Ｂｉ２Ｏ３、Ｐ
ｂＯ１
Ｔａ２０５．Ｓｉ３Ｎ４、ＴｉＮ、ＢｉＦ３、Ｌｉ Ｆ
、ＰｂＦ２．ＭｇＦ２およびＺｎＳからなる群から選ば
れた薄膜を形成してもよい。In addition, if necessary, T e O2, V 203, TiO2, 5i is added between the substrate and the recording layer and/or on the recording layer.
n2.5iO1B203.5b203, Bi2O3, P
bO1 Ta205. Si3N4, TiN, BiF3, LiF
, PbF2. A thin film selected from the group consisting of MgF2 and ZnS may be formed.
これらは混合組成であってもよい。 また、この他、ホ
ウケイ酸ガラス等の各種ガラスも好適である。These may be mixed compositions. In addition, various glasses such as borosilicate glass are also suitable.
これにより、記録層の劣化を防止でき、さらに再生信号
の・コントラストを向上させることができる。This makes it possible to prevent deterioration of the recording layer and further improve the contrast of the reproduced signal.
このような、記録層の基体側に形成される中間層の厚さ
は０．Ｏ１〜１−程度、また、記録層の基体反対側に形
成される保護層の厚さは０．０１〜１−程度とし、設層
は前述のドライコーティングによればよい。The thickness of such an intermediate layer formed on the substrate side of the recording layer is 0. The thickness of the protective layer formed on the opposite side of the recording layer to the substrate is about 0.01 to 1-1, and the layer may be formed by the dry coating described above.
また、基体の他面上など媒体の外面には、各種保護コー
トを設けてもよい。Furthermore, various protective coats may be provided on the outer surface of the medium, such as on the other surface of the substrate.
保護コートとしては、例えば、−酸化ケイ素、二酸化ケ
イ素、ＡＩＬ、Ｔｉ等の無機系の真空蒸着膜や樹脂膜等
を設ける試み（特開昭５７−５５５４５号、同第５６−
１３０３９４号、同第５６−１５６９４０号、同第５６
−１５５９４０号公報等）がある。As a protective coat, attempts have been made to provide, for example, inorganic vacuum-deposited films or resin films such as -silicon oxide, silicon dioxide, AIL, Ti, etc.
No. 130394, No. 56-156940, No. 56
-155940, etc.).
このような記録層を基体上に有する情報記録媒体に記録
を行うには、光ないし熱エネルギーを付与する。To record on an information recording medium having such a recording layer on a substrate, light or thermal energy is applied.
一般的には、記録光としては、半導体レーザー等を用い
ればよい。Generally, a semiconductor laser or the like may be used as the recording light.
記録光の照射により、通常、照射部の記録層に非晶質−
結晶質の相転移を生起させ、記録が行われる。 すなわ
ち、通常は結晶質から非晶質への相転移を利用して記録
を行う。Irradiation of recording light usually causes amorphous -
Recording is performed by causing a crystalline phase transition. That is, recording is normally performed using a phase transition from crystalline to amorphous.
消去を行う場合には、前記の消去光を用い、記録の場合
と逆過程の相転移を利用すればよい。When erasing, it is sufficient to use the above-mentioned erasing light and utilize phase transition, which is the reverse process to that for recording.
本発明において、結晶質から非晶質への相転移を記録に
使用し、この逆過程を消去に使用した場合、記録パルス
は１００〜１０００ｎＳｅＣ程度（記録光出力４〜１０
［１１１１）、消去パルスは０．５〜１０μｓｅＣ程度
（消去光出力１〜４ｍｗ）とすると、高コントラストで
、きわめて安定に記録・消去のくり返しが可能である。In the present invention, when the phase transition from crystalline to amorphous is used for recording and the reverse process is used for erasing, the recording pulse is about 100 to 1000 nSeC (recording light output 4 to 10
[1111) If the erasing pulse is set to about 0.5 to 10 μsec (erasing light output 1 to 4 mw), recording and erasing can be repeated extremely stably with high contrast.
記録後の読みとりは、読みとり光を照射するなどして、
記録層の反射率の変化等を利用して検出すわばよい。To read after recording, use a reading light, etc.
Detection may be performed using changes in the reflectance of the recording layer.
■ 発明の具体的作用効果
本発明の情報記録媒体の記録層は、ＳｎおよびＴｅを含
有し、ＳｎとＴｅの組成比を変化させることにより、結
晶転移温度Ｔｘを容易に調整することができる。(2) Specific effects of the invention The recording layer of the information recording medium of the invention contains Sn and Te, and the crystal transition temperature Tx can be easily adjusted by changing the composition ratio of Sn and Te.
また、記録層がＴｅとＳｎの２元素から構成されている
ため、上記の組成の調整、したがって結晶転移温度Ｔｘ
の調整が容易である。In addition, since the recording layer is composed of two elements, Te and Sn, the above composition adjustment, and therefore the crystal transition temperature Tx
It is easy to adjust.
また記録層は、記録光や消去光などを照射することによ
って非晶質−結晶質の可逆的相転移が生起する。Further, in the recording layer, a reversible phase transition between amorphous and crystalline occurs when irradiated with recording light, erasing light, or the like.
従って、この現象を利用することによって、情報をくり
返し記録・消去することができ、しかも本発明において
は、従来の媒体に比べて、特に、消去をきわめて高速で
行うことができるという優れた特性を有する。Therefore, by utilizing this phenomenon, information can be repeatedly recorded and erased, and in addition, the present invention has an excellent property of being able to erase information at extremely high speed compared to conventional media. have
■ 発明の具体的実施例
以下、本発明の具体的実施例を挙げ、本発明をさらに詳
細に説明する。(2) Specific Examples of the Invention Hereinafter, the present invention will be explained in more detail by giving specific examples of the invention.
実施例１
ガラス基体（コーニング社７７４０ガラス）上にスパッ
タリングによりＴｅ−３ｎ層を設層した。 この薄膜層
（記録層）の厚さは約１０００人であった。Example 1 A Te-3n layer was deposited on a glass substrate (Corning 7740 glass) by sputtering. The thickness of this thin film layer (recording layer) was about 1000.
この薄膜層のＳｎ／（Ｔｅ＋Ｓｎ）原子比をＩＣＰで測
定したところ、０．７１であった。The Sn/(Te+Sn) atomic ratio of this thin film layer was measured by ICP and found to be 0.71.
このサンプルをＸＤで測定したところハローパターンを
示しており、Ｔｅ−３ｎの非晶質薄膜かできていること
が確認された。When this sample was measured by XD, it showed a halo pattern, and it was confirmed that an amorphous thin film of Te-3n was formed.
そして、この非晶質サンプルを１２０℃で１０分間アニ
ールしたところ、波長８３０ｎｍでの反射率は、約４５
％から６０％へと変化した。When this amorphous sample was annealed at 120°C for 10 minutes, the reflectance at a wavelength of 830 nm was approximately 45.
% to 60%.
そして、この加熱後のサンプルを再びＸＤで測定したと
ころ、結晶性のピークが現われており、上記の反射率変
化は、Ｔｅ−５ｎ非晶質が結晶化したことによるもので
あることが確認された。When the heated sample was again measured by XD, a crystalline peak appeared, confirming that the reflectance change described above was due to crystallization of the Te-5n amorphous. Ta.
実施例２
実施例１のカラス基体−トに、スパッタリングによりＴ
ｅ−３ｎ比を変化させてＴｅ−５ｎ層を膜厚１０００人
となるように設層した。Example 2 T was applied to the glass substrate of Example 1 by sputtering.
A Te-5n layer was formed with a thickness of 1000 nm by changing the e-3n ratio.
これらのサンプルについて結晶転移温度Ｔｘを測定し、
Ｓｎ／（Ｔｅ＋Ｓｎ）原子比とＴｘとの関係を表１に示
す。The crystal transition temperature Tx was measured for these samples,
Table 1 shows the relationship between the Sn/(Te+Sn) atomic ratio and Tx.
表１に示される結果より、Ｔｅ −Ｓ ｎ比を変化させ
ることにより容易にＴｘを調整することが可能であるこ
とかわかる。From the results shown in Table 1, it can be seen that Tx can be easily adjusted by changing the Te-Sn ratio.
さらにＳｎ／（Ｔｅ＋Ｓｎ）比が０．６より小さい場合
は、Ｔｘが低くなフてしまい、記録状態の安定性か悪く
なってしまう。Furthermore, if the Sn/(Te+Sn) ratio is smaller than 0.6, Tx will be low and the stability of the recording state will deteriorate.
表 １
実施例３
ポリカーボネートディスク基体上にスパッタリングによ
り、Ｓ ｉ ０２ 、 Ｔｅ−３ｎ。Table 1 Example 3 S i 02 , Te-3n by sputtering onto a polycarbonate disk substrate.
５ｉｎ２の各層をこの順序で各々約１００ｏ人の厚さに
設層した。 さらに、その上から、スピンコードにより
、下記のＵＶ硬化樹脂層を約７−の膜厚に設層した。Each layer of 5 in 2 was deposited in this order to a thickness of about 100 Å. Furthermore, the following UV curable resin layer was formed on top of it using a spin cord to a thickness of about 7 mm.
（ＵＶ硬化樹脂組成物）
多官能オリゴエステルアクリレート
（アロニンクスＭ−８０３０） １００重量部光増感
剤（バイキュア５５） ５重量部このような組成物
を設層後、８０ Ｗ ／ ｃ ｍ紫外線を１５ｓｅｃ照
射し架橋硬化させた。(UV curable resin composition) Multifunctional oligoester acrylate (Aroninx M-8030) 100 parts by weight Photosensitizer (Bicure 55) 5 parts by weight After coating such a composition, 80 W/cm ultraviolet rays were applied for 15 seconds. It was cross-linked and cured by irradiation.
この場合のＴｅ−５ｎ層（記録層）のＳｎ／（Ｔｅ＋Ｓ
ｎ）原子比は０．７１である。In this case, the Te-5n layer (recording layer) Sn/(Te+S
n) Atomic ratio is 0.71.
（１）このディスクサンプルを１１０℃、１０分間アニ
ールしたものを記録媒体とし、ディスクを４ｍ／ｓｅｃ
の速度で回転させ、基体側より、約１μｓに絞りこんだ
半導体レーザー（波長８３０ ｎｍ）を７ｍＷ、ＩＭｔ
ｌｚで照射して記録を行なった。(1) This disk sample was annealed at 110°C for 10 minutes as a recording medium, and the disk was heated at 4 m/sec.
A semiconductor laser (wavelength 830 nm) focused to about 1 μs was heated at 7 mW, IMt from the substrate side.
Recordings were made with irradiation at lz.
この信号を１．Ｏ［ＩＩＷの連続レーザー光（波長８３
０ ｎｍ）にて再生して、再生信号Ｓ、を得た。This signal is 1. O[IIW continuous laser light (wavelength 83
0 nm) to obtain a reproduced signal S.
（２）このディスクサンプルを０ 、４ ｍ ／ ｓて
回転させながら３．４ｍＷの連続光を照射−づ−ること
によって消去を行なフた。(2) Erasing was performed by irradiating continuous light of 3.4 mW while rotating this disk sample at 0.4 m/s.
そして、消去後の残存信号を測定し、Ｓ２を得た。Then, the residual signal after erasure was measured to obtain S2.
（３）上記（１）と（２）を交互にくり返すことにより
記録・消去のくり返しを５０回行なったところ表２に示
されるような非常に安定な記録・消去のくり返し特性が
得られた。(3) By repeating (1) and (2) above, recording and erasing were repeated 50 times, and very stable recording and erasing characteristics as shown in Table 2 were obtained. .
表 ２ 以北の結果より本発明の効果は明らかである。Table 2 The effects of the present invention are clear from the results obtained.
実施例４
実施例３のサンプルに対し、Ｔ２、Ｉｎ、Ｇｅの添加（
２ａｔ％）を行った。Example 4 Addition of T2, In, and Ge to the sample of Example 3 (
2at%) was performed.
これらの結果を表３に示す。These results are shown in Table 3.
表 ３
ＴＩ１４４ ４４ ６ ７
なお、表３において、ＳＩおよびＳ２のく ）かっこ内
の数値はそれぞれ記録・消去のくり返し回数を示す。Table 3 TI144 44 6 7
In Table 3, the numbers in parentheses after SI and S2 indicate the number of times recording and erasing are repeated, respectively.
なお、５ｉ０２薄膜をＴｅＯ２、■２０３、ＴｉＯ３，
５ｉＯ１Ｂ２０３．Ｓ ｂ２０３、Ｂｉ、０３．ＰｂＯ
１Ｔａ２０５、
Ｓ ｉ ３ Ｎ ４ 、Ｔ ｉＮ 、Ｂ ｔ Ｆ ３
、Ｌ ｉＦ 。Note that the 5i02 thin film is TeO2, ■203, TiO3,
5iO1B203. S b203, Bi, 03. PbO
1Ta205, S i 3 N 4 , T iN , B t F 3
, L iF .
Ｐ ｂ Ｆ ２ 、 Ｍ ｇＦ ２ 、 Ｚ ｎ Ｓや
ガラスの薄膜にしたところ、同等の結果が得られた。Similar results were obtained using thin films of PbF2, MgF2, ZnS, and glass.
Claims (5)
原子比が０．６以上である記録層を基体上に有すること
を特徴とする情報記録媒体。(1) An information recording medium comprising, on a substrate, a recording layer containing Te and Sn and having an atomic ratio of Sn/(Te+Sn) of 0.6 or more.
原子比が０．６以上であり、このＴｅとＳｎとの総和に
対しＧｅ、ＩｎおよびＴｌの１種以上を１０ａｔ％以下
含有する記録層を基体上に有することを特徴とする情報
記録媒体。(2) A record that contains Te and Sn, has an atomic ratio of Sn/(Te+Sn) of 0.6 or more, and contains 10 at% or less of one or more of Ge, In, and Tl based on the total of Te and Sn. An information recording medium characterized by having a layer on a substrate.
原子比が０．６以上であるか、あるいはこのＴｅとＳｎ
の総和に対しさらにＧｅ、ＩｎおよびＴｌの１種以上を
１０ａｔ％以下含有する記録層を基体上に有し、基体と
記録層の間および／または記録層上にＴｅＯ＿２、Ｖ＿
２Ｏ＿３、ＴｉＯ＿３、ＳｉＯ＿２、ＳｉＯ、Ｂ＿２Ｏ
＿３、Ｓｂ＿２Ｏ＿３、Ｂｉ＿２Ｏ＿３、ＰｂＯ、Ｔａ
＿２Ｏ＿５、Ｓｉ＿３Ｎ＿４、ＴｉＮ、ＢｉＦ＿３、Ｌ
ｉＦ、ＰｂＦ＿２、ＭｇＦ＿２、ＺｎＳおよびガラスの
うちの１種以上を成分とする薄膜を有することを特徴と
する情報記録媒体。(3) Contains Te and Sn, and the atomic ratio of Sn/(Te+Sn) is 0.6 or more, or the Te and Sn
The substrate further includes a recording layer containing 10 at% or less of one or more of Ge, In, and Tl, and TeO_2, V_2 between the substrate and the recording layer and/or on the recording layer.
2O_3, TiO_3, SiO_2, SiO, B_2O
_3, Sb_2O_3, Bi_2O_3, PbO, Ta
_2O_5, Si_3N_4, TiN, BiF_3, L
An information recording medium characterized by having a thin film containing one or more of iF, PbF_2, MgF_2, ZnS, and glass as a component.
原子比が０．６以上であるか、あるいはこのＴｅとＳｎ
の総和に対しさらにＧｅ、ＩｎおよびＴｌの１種以上を
１０ａｔ％以下含有する記録層を基体上に有する情報記
録媒体に非晶質−結晶質間の相転移を生起させて記録お
よび消去を行うことを特徴とする情報記録および消去方
法。(4) Contains Te and Sn, and the atomic ratio of Sn/(Te+Sn) is 0.6 or more, or the Te and Sn
Recording and erasing is performed by causing an amorphous-crystalline phase transition in an information recording medium having a recording layer on a substrate that further contains 10 at% or less of one or more of Ge, In, and Tl with respect to the total sum of An information recording and erasing method characterized by:
るいは一部をあらかじめ結晶質にしておき、レーザーパ
ルス照射により選択的部分を非晶質にすることにより記
録を行ない、この非晶質の記録部をレーザー照射あるい
は熱源により再び結晶質にすることにより消去を行なう
特許請求の範囲第４項に記載の情報記録および消去方法
。(5) Recording is performed by making the entire surface or part of the recording layer crystalline in advance by laser irradiation or a heat source, and then selectively making the portion amorphous by laser pulse irradiation. The information recording and erasing method according to claim 4, wherein the information recording and erasing method is performed by making the information crystalline again by laser irradiation or a heat source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61307298A JPH07115538B2 (en) | 1986-12-23 | 1986-12-23 | Information recording medium and information recording and erasing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61307298A JPH07115538B2 (en) | 1986-12-23 | 1986-12-23 | Information recording medium and information recording and erasing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63160028A true JPS63160028A (en) | 1988-07-02 |
| JPH07115538B2 JPH07115538B2 (en) | 1995-12-13 |
Family
ID=17967455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61307298A Expired - Lifetime JPH07115538B2 (en) | 1986-12-23 | 1986-12-23 | Information recording medium and information recording and erasing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07115538B2 (en) |
-
1986
- 1986-12-23 JP JP61307298A patent/JPH07115538B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07115538B2 (en) | 1995-12-13 |
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