JPS63157471A - Formation of ccd transfer electrode - Google Patents
Formation of ccd transfer electrodeInfo
- Publication number
- JPS63157471A JPS63157471A JP61303924A JP30392486A JPS63157471A JP S63157471 A JPS63157471 A JP S63157471A JP 61303924 A JP61303924 A JP 61303924A JP 30392486 A JP30392486 A JP 30392486A JP S63157471 A JPS63157471 A JP S63157471A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- poly
- transfer electrode
- oxide film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004020 conductor Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 230000001012 protector Effects 0.000 description 7
- IGRCWJPBLWGNPX-UHFFFAOYSA-N 3-(2-chlorophenyl)-n-(4-chlorophenyl)-n,5-dimethyl-1,2-oxazole-4-carboxamide Chemical compound C=1C=C(Cl)C=CC=1N(C)C(=O)C1=C(C)ON=C1C1=CC=CC=C1Cl IGRCWJPBLWGNPX-UHFFFAOYSA-N 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＣＣＤ転送電極形成方法に関し、更に詳述すれ
ば、ＣＣＤ形固体撮像累子の製作過程におけるゲート酸
化膜の静電破壊を防止１きるＣＣＤ転送電極形成方法に
関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for forming a CCD transfer electrode. This invention relates to a method for forming CCD transfer electrodes.
（従来技術）
従来より、多くの固体撮像素子では、その製作過程中に
サージ電圧等の発生により静電破壊を生じることがあり
、これを防止するため電極と基板間に接合形ダイオード
即ちインプットプロテクタを配置して異状電流を基板側
に流すことにより保護していた。(Prior art) Conventionally, in many solid-state image sensors, electrostatic damage may occur due to the generation of surge voltage during the manufacturing process. To prevent this, a junction diode, that is, an input protector, is installed between the electrode and the substrate. It was protected by placing an abnormal current on the board side.
処で、ＣＣＤＣ固形撮像素子は、周知のとおり、ＣＣＤ
転送電極の電位を負にして使用されることがあり、この
ため製造時に静電破壊防止のために設けられるインプッ
トプロテクタがこの場合には頭方向バイスされることに
なり、用いることが出来なかった。As is well known, the CCDC solid-state image sensor is a CCDC solid-state image sensor.
The potential of the transfer electrode is sometimes used with a negative potential, and for this reason, the input protector, which is installed during manufacturing to prevent electrostatic damage, has to be biased in the head direction and cannot be used. .
（発明が解決しようとする問題点）
従って、従来のＣＣＤＣ固形撮像素子では、その製作過
程において、半導体基板上にゲート酸化膜を介してポリ
シリコン転送電極をバターニングした後はフローティン
グ状態に設けられており、そのためゲート酸化膜が静電
破壊される場合が多く、歩留を悪くしていた。(Problems to be Solved by the Invention) Therefore, in the conventional CCDC solid-state image sensor, in the manufacturing process, after the polysilicon transfer electrode is patterned on the semiconductor substrate via the gate oxide film, it is provided in a floating state. As a result, the gate oxide film was often damaged by electrostatic discharge, resulting in poor yield.
本発明の目的は、上記事情に基づいてなされたものフ、
デフ９イス製作時の静電破壊を防止１きるＣＣＤ転送電
極形成方法を提供することにある。The object of the present invention is to solve the above-mentioned problems.
An object of the present invention is to provide a method for forming a CCD transfer electrode that can prevent electrostatic damage during the manufacture of a differential chair.
（問題点を解決するための手段）
すなわち、本発明の上記目的は、Ｓｉ基板上にゲート酸
化膜を介してボＩＪＳｉの転送電極が形成されるＣＣＤ
電極形成方法において、ゲート酸化膜のエツチングによ
り前記ポリＳｌが基板表面と電気的に接続されるコンタ
クト部と前記転送電極とを接続するポリ８１の一部を高
抵抗フユーズまたはレーザー切断可能な形状の切断部に
設けており、デバイス完成後に前記切断部が電気的に溶
断またはレーザー溶断されることを特徴とするＣＣＤ電
極形成方法により達成される。(Means for Solving the Problems) That is, the above object of the present invention is to provide a CCD in which a V-IJSi transfer electrode is formed on a Si substrate via a gate oxide film.
In the electrode forming method, by etching the gate oxide film, a part of the poly 81 connecting the transfer electrode and the contact part electrically connected to the substrate surface is formed into a high resistance fuse or a shape that can be cut by laser. This is achieved by a CCD electrode forming method characterized in that the cut portion is provided at a cut portion, and the cut portion is electrically cut or laser cut after the device is completed.
（実施例） 以下、図面により本発明の詳細な説明する。(Example) Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図に示す１実施例は、本発明の方法が適用されるＣ
ＣＤ形固体撮像素子の平面図であり、第２図は第１図の
Ａ −Ａ’線〒示す水平断面図である。One embodiment shown in FIG. 1 is a C
FIG. 2 is a plan view of the CD-type solid-state imaging device, and FIG. 2 is a horizontal cross-sectional view taken along line A-A' in FIG.
第１図および第２図において、この固体撮像素子は、Ｐ
形ＳＩ基板１の表面に、ゲート酸化膜２．４＋ＪＳｉ層
３および絶縁膜４が順次配置された、従来素子と同一構
造からなっている。In FIGS. 1 and 2, this solid-state image sensor has P
It has the same structure as the conventional element in which a gate oxide film 2.4+JSi layer 3 and an insulating film 4 are sequentially arranged on the surface of a type SI substrate 1.
前記ポリＳｉ層３は所定形状にパターニングされてＣＣ
Ｄ転送電極３ａを構成すると共に、前記ＣＣＤ転送電極
３＆が絶縁膜４のコンタクト部５を通してＡｌ線６と接
続されている。The poly-Si layer 3 is patterned into a predetermined shape to form a CC
In addition to forming the D transfer electrode 3a, the CCD transfer electrode 3& is connected to the Al wire 6 through the contact portion 5 of the insulating film 4.
本発明が適用される固体撮像素子は、前記転送電極が形
成された領域を除いた別の領域のゲート酸化膜２Ｋ、エ
ツチングにより開孔されたコンタクト部７を有し、前記
ＪＩＪＳＩ層３と基板１とを接続させている。また、前
記開孔された部分の基板には、リンが熱拡散きれＷ層を
設けて接合形ダイオードを形成している。この接合形ダ
イオードは、先の従来技術１述べたインプットプロテク
タであり、更に、この固体撮像素子は前記コンタクト部
７を介してこの接合形ダイオードと前記ＣＣＤ転送電極
３＆を接続する４１３８１層が所定形状にパターニング
されて高抵抗フユーズ部３ｂを形成している。A solid-state imaging device to which the present invention is applied has a gate oxide film 2K in a region other than the region where the transfer electrode is formed, a contact portion 7 opened by etching, and a contact portion 7 formed between the JIJSI layer 3 and the substrate. 1 is connected. Further, a W layer in which phosphorus is thermally diffused is provided on the substrate in the portion where the hole is formed, thereby forming a junction diode. This junction diode is the input protector mentioned in the prior art 1, and furthermore, in this solid-state image sensor, the 41381 layer connecting the junction diode and the CCD transfer electrode 3 through the contact portion 7 has a predetermined shape. The high resistance fuse portion 3b is formed by patterning.
上述のとおり構成された固体撮像素子は、ノソツケージ
にマウントされてＡＪパッド６＆とノぞツヶージの導体
端子間がワイヤゼンディングされてデバイス完成後の出
荷前に、前記フユーズ部３ｂが電気的に溶断される。こ
れＫより、デバイス製造中はゲート電極の静電破壊が前
記インプットプロテクタにより防止されると共に、デバ
イス完成後には前記インプットプロテクタが外されるた
め、電極に負バイアスを印加することが可能となってデ
バイス州道が拡大ｆきる。The solid-state image sensing device configured as described above is mounted on a nozzle cage, and the fuse portion 3b is electrically fused before shipping after the device is completed by wire-ending between the conductor terminals of the AJ pad 6& and the nozotsu cage. be done. From this, the input protector prevents electrostatic damage to the gate electrode during device manufacture, and the input protector is removed after the device is completed, making it possible to apply a negative bias to the electrode. Device State Highway will be expanded.
なお、前記実施例フは、コンタクト部７とＣＣＤ転送電
極３ａ
ｂに設けて電気的に溶断されるように記載したが、前記
４１３８１層の一部をレーザー切断可能な形状にパター
ニングし、レーザー溶断するように設けることも出来る
。In the above embodiment, the contact portion 7 and the CCD transfer electrodes 3a and 3b are provided so as to be electrically fused, but a part of the 41381 layer is patterned into a shape that can be cut by laser, and the 41381 layer is It can also be set up so that
また、前記実施例フは、ＣＣＤ転送電極が単層電極構造
であるように記載したが、２相または３相構造である場
合にも、それぞれのポリＳ１層にインプットプロテクタ
が接続されたヒユーズ部等を設けることにより本発明の
方法は達成される。Furthermore, although the above embodiment has been described in such a manner that the CCD transfer electrode has a single-layer electrode structure, even when the CCD transfer electrode has a two-phase or three-phase structure, a fuse section in which an input protector is connected to each poly S1 layer is used. The method of the present invention is achieved by providing the following.
（発明の効果）
以上記載したとおり、本発明のＣＣＤ電極形成方法によ
れば，電極を形成するポリ８１層の一部に、デバイス完
成後に電気的に切断される 箇所を介してインプットプ
ロテクタを接続することにより、製造中の静電破壊が防
止されて製造歩留が向上〒きると共に、デバイス完成後
には好適に作用するデバイスが得られる。(Effects of the Invention) As described above, according to the CCD electrode forming method of the present invention, an input protector is connected to a part of the poly 81 layer forming the electrode through a part that is electrically disconnected after the device is completed. By doing so, electrostatic damage during manufacturing can be prevented, manufacturing yield can be improved, and a device that functions properly can be obtained after the device is completed.
【図面の簡単な説明】
第１図は、本発明の１実施例を説明するＣＣＤ形固体撮
像素子の平面図、第２図は第１図のＡ−Ａ′線で示す水
平断面図ｔある。
１・・・Ｐ形Ｓｉ基板、２・・・ゲート酸化膜、３・・
・ボ１Ｊｓｉ層、３ａ・・・ＣＣＤ転送電極、３ｂ・・
・フユーズ部、４・・・絶Ｒ膜、５，７・・・コンタ・
クト部、６・・・ＡＩ線、
代理人弁理士（８１０７）佐々木清隆
（ほか３名）
６ａ−アＪレミハ・・ド 第 １
じゴ第 ２ 図[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a plan view of a CCD type solid-state image sensor illustrating an embodiment of the present invention, and FIG. 2 is a horizontal cross-sectional view taken along line A-A' in FIG. 1. . 1...P-type Si substrate, 2...gate oxide film, 3...
・BO1Jsi layer, 3a... CCD transfer electrode, 3b...
・Fuse part, 4... Absolute R membrane, 5, 7... Contour ・
Department, 6...AI Line, Agent Patent Attorney (8107) Kiyotaka Sasaki (and 3 others) 6a-AJ Remiha...Do 1st
Figure 2
Claims (1)
電極が形成されるＣＣＤ電極形成方法において、ゲート
酸化膜のエッチングにより前記ポリＳｉが基板表面と電
気的に接続されるコンタクト部と前記転送電極とを接続
するポリＳｉの一部を高抵抗フューズまたはレーザー切
断可能な形状の切断部に設けており、デバイス完成後に
前記切断部が電気的に溶断またはレーザー溶断されるこ
とを特徴とするＣＣＤ電極形成方法。 ２）ゲート酸化膜がエッチングされるコンタクト部下の
基板表面に接合形ダイオードが形成される特許請求の範
囲第１項に記載のＣＣＤ電極形成方法。[Claims] 1) In a CCD electrode forming method in which a poly-Si transfer electrode is formed on a Si substrate via a gate oxide film, the poly-Si is electrically connected to the substrate surface by etching the gate oxide film. A part of the poly-Si that connects the contact part to be connected to the transfer electrode is provided in a high resistance fuse or a cutting part in a shape that can be cut by laser, and the cutting part is electrically fused or laser blown after the device is completed. A CCD electrode forming method characterized by: 2) The CCD electrode forming method according to claim 1, wherein a junction diode is formed on the substrate surface below the contact where the gate oxide film is etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61303924A JPH0770700B2 (en) | 1986-12-22 | 1986-12-22 | CCD transfer electrode formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61303924A JPH0770700B2 (en) | 1986-12-22 | 1986-12-22 | CCD transfer electrode formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63157471A true JPS63157471A (en) | 1988-06-30 |
| JPH0770700B2 JPH0770700B2 (en) | 1995-07-31 |
Family
ID=17926916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61303924A Expired - Fee Related JPH0770700B2 (en) | 1986-12-22 | 1986-12-22 | CCD transfer electrode formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770700B2 (en) |
-
1986
- 1986-12-22 JP JP61303924A patent/JPH0770700B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770700B2 (en) | 1995-07-31 |
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|---|---|---|---|
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