JPS63155774A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS63155774A JPS63155774A JP30136586A JP30136586A JPS63155774A JP S63155774 A JPS63155774 A JP S63155774A JP 30136586 A JP30136586 A JP 30136586A JP 30136586 A JP30136586 A JP 30136586A JP S63155774 A JPS63155774 A JP S63155774A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- receiving diaphragm
- resistance
- thickness
- pressure receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 238000003754 machining Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、例えば圧力、差圧伝送器等に用いられる半
導体圧カセンザに関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor pressure sensor used, for example, in a pressure or differential pressure transmitter.
（従来の技術）
従来の半導体圧カーセンサとしては、例えば第５図に示
すようなものがある。(Prior Art) As a conventional semiconductor pressure sensor, there is one shown in FIG. 5, for example.
第５図中、１はｎ形３ｉの半導体基板で、半導体基板１
には、裏面の中央部が四部加工されて肉薄の受圧ダイヤ
フラム２が形成されている。受圧ダイヤフラム２は、平
面的には直径ｒの円形に形成されている。In FIG. 5, 1 is an n-type 3i semiconductor substrate, and the semiconductor substrate 1
A thin pressure receiving diaphragm 2 is formed by processing four parts of the central part of the back surface. The pressure receiving diaphragm 2 is formed into a circular shape with a diameter r in plan view.
半導体基板１の表面部で口つ受圧ダイヤフラム２の周辺
部には、ｐ形不鈍物がドープされて拡散層抵抗が形成さ
れ、この拡散層抵抗によりピエゾ抵抗３．４が形成され
ている。The surface of the semiconductor substrate 1 and the periphery of the pressure-receiving diaphragm 2 are doped with a p-type inert substance to form a diffusion layer resistance, and this diffusion layer resistance forms a piezoresistance 3.4.
そして受圧ダイヤフラム２に、その表面側から圧力Ｐが
加えられると、これがたわんでその表面部に歪が発生し
、各ピエゾ抵抗３．４の抵抗値がその歪量に応じて変化
する。When pressure P is applied to the pressure-receiving diaphragm 2 from its surface side, the pressure-receiving diaphragm 2 is deflected and strain is generated on the surface portion, and the resistance value of each piezoresistor 3.4 changes according to the amount of strain.
この各ピエゾ抵抗３．４の抵抗変化量ΔＲは、Ｓｉの受
圧ダイヤフラム２が右する圧力−歪特性の非直線性によ
り、次式で近似される。The resistance change amount ΔR of each piezoresistor 3.4 is approximated by the following equation due to the non-linearity of the pressure-strain characteristic of the Si pressure receiving diaphragm 2.
八Ｒ−に１ ・ （ｒ／ｈ）２
・ （Ｐ 十Ｋ ２ ・ＰＩ／３） ・・・
（１）ここでｒ：受圧ダイヤフラムの直径
ｈ：受圧ダイヤフラムの厚さ
に＋ 、Ｋ２ ：ポアソン比、縦弾性係数等で決まる
定数
第６図は、上記（１）式の圧力Ｐ−抵抗変化最八への関
係を示す特性図である。8R- to 1 ・ (r/h) 2 ・ (P 10K 2 ・PI/3) ...
(1) where r: diameter of the pressure diaphragm h: thickness of the pressure diaphragm +, K2: constant determined by Poisson's ratio, modulus of longitudinal elasticity, etc. 8 is a characteristic diagram showing the relationship to
特性線は、（１）式中のに２ ・ｐ＋３の項が効いて非
直線性を示している。The characteristic line exhibits nonlinearity due to the effect of the term 2·p+3 in equation (1).
しかし、精度のよい半導体圧力センサを構成するために
は圧力Ｐ−−抗変化量△Ｒの特性は直線性を有するもの
が求められる。However, in order to construct a highly accurate semiconductor pressure sensor, the characteristic of pressure P--resistance change ΔR is required to have linearity.
第７図は、このような圧力Ｐ−抵抵抗変化へＲの特性を
改善した他の従来例を示すものである。FIG. 7 shows another conventional example in which the characteristics of R are improved for such pressure P-resistance change.
この従来例では、受圧ダイヤフラム２の裏面側中央部に
円形段部２１が形成され、受圧ダイヤフラム２は、この
円形段部２１の部分の肉厚部と、その周辺の肉薄部とで
構成されている。肉厚部の厚さは、肉薄部の厚さに対し
て所定の比率を有している。In this conventional example, a circular stepped portion 21 is formed at the center of the back side of the pressure receiving diaphragm 2, and the pressure receiving diaphragm 2 is composed of a thick portion at the circular stepped portion 21 and a thin portion around the circular stepped portion 21. There is. The thickness of the thick portion has a predetermined ratio to the thickness of the thin portion.
ピエゾ抵抗３．４は、周辺の肉薄部の表面側に形成され
ている。The piezoresistor 3.4 is formed on the surface side of the peripheral thin portion.
そして受圧ダイヤフラム２に、その表面側から圧力が加
えられると、円形段部２１の部分の肉厚部は、剛体とし
て作用し、肉厚部と肉薄部の境界のコーナ一部２２に応
用集中が生じて歪が発生する。When pressure is applied to the pressure-receiving diaphragm 2 from its surface side, the thick part of the circular stepped part 21 acts as a rigid body, and the application concentration is applied to the corner part 22 at the boundary between the thick part and the thin part. This causes distortion.
受圧ダイヤフラム２に、このようなパターンの歪が発生
することにより、圧力Ｐ−抵抗変化量八への特性は、直
線性を有するように改善される。By generating such a pattern of distortion in the pressure receiving diaphragm 2, the characteristic of pressure P-resistance change amount 8 is improved to have linearity.
（発明が解決しようとする問題点）
圧力−抵抗変化量特性を改善した第７図の従来例では、
コーナ一部２２に応力集中が生じて、この部分に歪が集
中して発生ずるので、感圧特性の揃った半導体圧力セン
サを作製するためには、受圧ダイヤフラム２の表面側に
形成されるピエゾ抵抗３．４と、裏面側に形成されるコ
ーナ一部２２との位置関係を精度よく管理することが必
要とされる。(Problems to be Solved by the Invention) In the conventional example shown in FIG. 7 in which the pressure-resistance change characteristic is improved,
Stress concentration occurs in the corner part 22, and strain is concentrated in this part. Therefore, in order to produce a semiconductor pressure sensor with uniform pressure-sensitive characteristics, a piezoelectric sensor formed on the surface side of the pressure receiving diaphragm 2 is required. It is necessary to accurately manage the positional relationship between the resistor 3.4 and the corner portion 22 formed on the back side.
しかしながら、ピエゾ抵抗は受圧ダイヤフラムの表面側
に形成されるのに対し、円形段部２１は、その裏面側に
形成され、また円形段部２１は、通常、砥石による機械
的な研削手段により形成されるので、砥石が摩耗すると
円形段部２１の直径に誤差が生じ易い。このため、ピエ
ゾ抵抗３．４と、コーナ一部２２との位置関係を精度よ
く管理することが難しく、感圧特性にばらつきが生じて
、製品の歩留りが低下するという問題点があった。However, while the piezoresistance is formed on the front side of the pressure receiving diaphragm, the circular step 21 is formed on the back side, and the circular step 21 is usually formed by mechanical grinding with a grindstone. Therefore, when the grindstone wears out, errors tend to occur in the diameter of the circular stepped portion 21. For this reason, it is difficult to accurately manage the positional relationship between the piezoresistor 3.4 and the corner portion 22, resulting in variations in pressure-sensitive characteristics and a problem in that the yield of products decreases.
この発明は上記事情に基づいてなされたもので、圧力−
抵抗変化層特性は、直線性を有するとともに、感圧特性
のばらつきが少なく、製品の歩留りを向」二させること
のできる半導体圧力センサを提供することを目的とする
。This invention was made based on the above circumstances, and the pressure
The object of the present invention is to provide a semiconductor pressure sensor that has linear resistance change layer characteristics, has little variation in pressure sensitive characteristics, and can improve product yield.
［発明の構成］
（問題点を解決するための手段）
この発明は上記問題点を解決するために、半導体基板に
、裏面の凹部加工により受圧ダイＸ７フラムを形成し、
前記半導体基板の表面部で且つ当該受圧ダイヤフラムの
周辺部にピエゾ抵抗を形成した半導体圧カセンザにおい
て、前記受圧ダイヤフラムは、周辺部から中心部に向っ
て漸次肉厚で、当該中心部は所要の厚さに形成されてい
ることを要旨とする。[Structure of the Invention] (Means for Solving the Problems) In order to solve the above problems, the present invention forms a pressure receiving die X7 flammable on a semiconductor substrate by machining a recess on the back surface,
In the semiconductor pressure sensor in which a piezoresistance is formed on the surface of the semiconductor substrate and in the periphery of the pressure receiving diaphragm, the pressure receiving diaphragm has a thickness that gradually increases from the periphery to the center, and the center has a required thickness. The main point is that it is formed in the same way.
（作用）
受圧ダイヤフラムは、所要の厚さに形成されている中心
部が剛体として作用し、主としてその周辺部に応力が生
じるので圧力−抵抗変化量特性は直線性が得られる。(Function) The pressure-receiving diaphragm has a center portion formed to a required thickness that acts as a rigid body, and stress is mainly generated in the peripheral portion thereof, so that linearity can be obtained in the pressure-resistance change amount characteristic.
また受圧ダイヤフラムは、周辺部から中心部に向って漸
次肉厚となっているので、局部的な応力集中が避けられ
て、応力集中の度合が緩和される。Further, since the pressure receiving diaphragm gradually becomes thicker from the peripheral portion toward the center, local stress concentration can be avoided and the degree of stress concentration can be alleviated.
このためピエゾ抵抗の形成位置に多少の位置ずれが生じ
ても、感圧特性のばらつきが少なくなる。For this reason, even if a slight displacement occurs in the formation position of the piezoresistor, variations in pressure-sensitive characteristics are reduced.
（実施例）
以下この発明の実施例を第１図〜第４図に基づいて説明
する。(Example) Examples of the present invention will be described below based on FIGS. 1 to 4.
第１図は縦断面図、第２図は受圧ダイヤフラムの形成方
法の一例を示す断面図、第３図はピエゾ抵抗の抵抗変化
を電圧変化として取出すためのブリッジ回路の回路図、
第４図は受圧ダイヤフラムの周辺部の厚さに対する中心
部の厚さの比と圧力−抵抗変化量の非直線性との関係を
示す特性図である。FIG. 1 is a longitudinal sectional view, FIG. 2 is a sectional view showing an example of a method for forming a pressure receiving diaphragm, and FIG. 3 is a circuit diagram of a bridge circuit for extracting resistance changes of a piezoresistor as voltage changes.
FIG. 4 is a characteristic diagram showing the relationship between the ratio of the thickness of the central portion to the thickness of the peripheral portion of the pressure receiving diaphragm and the nonlinearity of the pressure-resistance change amount.
なお第１図等において前記第５図における部材および部
位と同一ないし均等のものは、前記と同一符号を以って
示し、重複した説明を省略する。In FIG. 1, etc., members and parts that are the same or equivalent to those in FIG.
まず構成を説明すると、この実施例では、受圧ダイヤフ
ラム５の裏面に、周辺の肉薄部５ａから中心部に向って
順次肉厚の円形段部５ｂ、５Ｃが形成され、受圧ダイヤ
フラム５は、周辺部から中心部に向って段階的に漸次肉
厚となるように構成されている。First, to explain the configuration, in this embodiment, circular step portions 5b and 5C are formed on the back surface of the pressure receiving diaphragm 5, and the circular step portions 5b and 5C are sequentially thick from the peripheral thin portion 5a toward the center. It is constructed so that the thickness gradually increases from the center toward the center.
周辺の肉薄部５ａの厚さｈｌに対する中心の円形段部５
Ｃ部分の厚さｈ２の比ｈ２ ／ｈ、は、受圧ダイヤフラ
ム５の直径にも依存するが、後述するように、この比ｈ
２ ／ｈ、は、１．２程瓜に選ばれる。The circular stepped portion 5 at the center is relative to the thickness hl of the peripheral thin portion 5a.
The ratio h2/h of the thickness h2 of the C portion depends on the diameter of the pressure receiving diaphragm 5, but as described later, this ratio h2/h
2/h is selected to be about 1.2.
ピエゾ抵抗３．４は、周辺の肉薄部５ａの表面側に形成
されている。The piezoresistor 3.4 is formed on the surface side of the peripheral thin portion 5a.
第２図は、受圧ダイヤフラム５の形成方法の一例を示す
もので、グラインダー６による研削加工法を採用したも
のである。FIG. 2 shows an example of a method for forming the pressure receiving diaphragm 5, in which a grinding method using a grinder 6 is employed.
グラインダー６の研削面は、円形段部５ｂ１５Ｃに対応
した凹面に形成されている。The grinding surface of the grinder 6 is formed into a concave surface corresponding to the circular stepped portion 5b15C.
半導体基板１は、その周縁部等を位置決めの目安として
、ガラス等の台板７に、その表面側が対接するようにワ
ックス８で固定される。The semiconductor substrate 1 is fixed to a base plate 7 made of glass or the like with wax 8 so that its surface side is in contact with the base plate 7, using its peripheral edge as a guide for positioning.
この状態で、半導体基板１の裏面側中央部に、回転を与
えられたグラインダー６が、水、砥粒を媒介材として押
し付けられ、研削加工が行なわれる。押し付は量を規定
することにより、所定深さまで研削したのち、グライン
ダー６を後退させる。In this state, the rotated grinder 6 is pressed against the central part of the back side of the semiconductor substrate 1 using water and abrasive grains as mediating materials, and a grinding process is performed. By specifying the pressing amount, the grinder 6 is moved back after grinding to a predetermined depth.
研削加工により、受圧ダイヤフラム５の裏面に生じた微
小な破砕層を、ぶつ酸、硝酸の混合液等により化学エツ
チングを行なって除去する。次いで半導体基板１を台板
７から取外すことにより、裏面に所要の肉薄部５ａおよ
び円形段部５ｂ１５Ｃを有する受圧ダイヤフラム５が形
成される。The minute fracture layer formed on the back surface of the pressure-receiving diaphragm 5 by the grinding process is removed by chemical etching using a mixed solution of butic acid, nitric acid, or the like. Next, by removing the semiconductor substrate 1 from the base plate 7, the pressure receiving diaphragm 5 having the required thinned portion 5a and circular stepped portion 5b15C on the back surface is formed.
第３図は、ピエゾ抵抗３．４の抵抗変化を電圧変化とし
て取出Ｊためのブリッジ回路の構成を示すものである。FIG. 3 shows the configuration of a bridge circuit for extracting the resistance change of the piezoresistor 3.4 as a voltage change.
Ｓｉ半導体基板１が成る一定の結晶面を有するとき、ピ
エゾ抵抗は、その長手方向を、受圧ダイヤフラム５の半
径方向と同方向、またはその円周方向と同方向に形成す
ることにより、感度は同じで抵抗変化の符号の異なるも
のを得ることができる。両ピエゾ抵抗３．４には、この
形成方法が採用されて、ピエゾ抵抗３は、抵抗変化の符
号がプラスであり（これを抵抗Ｒｐとする）、他のピエ
ゾ抵抗４は、抵抗変化の符号がマイナス（これを抵抗Ｒ
ｎとする）となるように構成されている。When the Si semiconductor substrate 1 has a certain crystal plane, the piezoresistor has the same sensitivity by forming its longitudinal direction in the same direction as the radial direction of the pressure receiving diaphragm 5 or in the same direction as its circumferential direction. It is possible to obtain resistance changes with different signs. This formation method is adopted for both piezoresistors 3.4, and piezoresistor 3 has a positive sign of resistance change (this is referred to as resistance Rp), and the other piezoresistor 4 has a positive sign of resistance change. is negative (this is the resistance R
n).
ブリッジ回路は、この２個のピエゾ抵抗Ｒｐ、Ｒｎを２
辺とし、その対辺には固定抵抗Ｒがそれぞれ接続されて
いる。The bridge circuit connects these two piezo resistors Rp and Rn to 2
A fixed resistor R is connected to the opposite side.
９ａ、９ｂは直流定電圧Ｅｉｎが印加される電源端子、
Ｉｌａ、１１ｂは検出電圧端子で、検出電圧端子１１ａ
、１１ｂからピエゾ抵抗Ｒｐ、Ｒｎの抵抗変化量に対応
した電圧が検出電圧ＥＯＵｔとして取出される。9a and 9b are power supply terminals to which a constant DC voltage Ein is applied;
Ila and 11b are detection voltage terminals, and detection voltage terminal 11a
, 11b, a voltage corresponding to the amount of resistance change of the piezoresistors Rp and Rn is extracted as a detection voltage EOUTt.
次に作用を説明する。Next, the action will be explained.
受圧ダイヤフラム５に、その表面側から圧力Ｐが加えら
れると、円形段部５ｃにより肉厚に形成された中心部は
剛体として作用し、主として周辺の肉薄部５ａ側に応力
が生じる。この応ツノにより、受圧ダイヤフラム５の表
面部に歪が発生し、この歪量に応じて、ピエゾ抵抗３は
その抵抗値がプラス方向に変化し、また他のピエゾ抵抗
４はその抵抗値がマイナス方向に変化する。When pressure P is applied to the pressure-receiving diaphragm 5 from its surface side, the central portion formed thickly by the circular step portion 5c acts as a rigid body, and stress is mainly generated on the peripheral thin portion 5a side. Due to this response, strain occurs on the surface of the pressure receiving diaphragm 5, and according to the amount of strain, the resistance value of the piezoresistor 3 changes in a positive direction, and the resistance value of the other piezoresistors 4 changes in a negative direction. change in direction.
受圧ダイヤフラム５は、中心部の厚さｈ２と、周辺部の
厚さｈｌとの比ｈ２／ｈ＋ が、その直径に応じた所要
の値の１．２程瓜に選ばれているので、第４図に示すよ
うに圧カー抵抗変化量の非直線性（非直線率）は、はぼ
ゼロとなって、各ピエゾ抵抗３．４からは、圧力Ｐに正
比例した抵抗変化量が得られる。The pressure-receiving diaphragm 5 has a ratio h2/h+ of the thickness h2 at the center and the thickness hl at the periphery, which is approximately 1.2, which is the required value according to its diameter. As shown in the figure, the nonlinearity (nonlinearity) of the pressure car resistance change amount is almost zero, and a resistance change directly proportional to the pressure P is obtained from each piezoresistor 3.4.
このピエゾ抵抗３．４の抵抗変化により、当初平衡状態
にあったブリッジ回路の平衡がくずれ、検出電圧端子１
１ａ、１１ｂからは、圧力Ｐに比例した検出電圧Ｅｏｕ
ｔが取出される。Due to this change in the resistance of the piezoresistor 3.4, the balance of the bridge circuit, which was initially in a balanced state, is lost, and the detection voltage terminal 1
From 1a and 11b, a detection voltage Eou proportional to the pressure P is detected.
t is taken out.
そして、このような、圧力Ｐの検出作用において、受圧
ダイヤフラム５は、周辺の肉薄部５ａから中心部に向っ
て段階的に漸次肉厚となっているので、ピエゾ抵抗３．
４が設けられている肉薄部５ａの部分への応力集中の度
合が避けられ、この応力集中の度合が緩和される。In such a pressure P detection operation, the pressure receiving diaphragm 5 gradually becomes thicker from the peripheral thin portion 5a toward the center, so that the piezoresistor 3.
The degree of stress concentration on the portion of the thin wall portion 5a where 4 is provided can be avoided, and the degree of stress concentration can be alleviated.
このため、肉薄部５ａの部分に対づるピエゾ抵抗３．４
の形成位置に多少の位置ずれが生じでいても、感圧特性
のばらつきが少なくなる。Therefore, the piezo resistance 3.4 for the thin portion 5a is
Even if some misalignment occurs in the formation position, the variation in pressure-sensitive characteristics will be reduced.
なお、この発明は−し述の実施例に限定されるものでは
なく、例えば上述の実施例では、ｎ形Ｓ１の半導体基板
に、ｐ形の拡散層抵抗によりピエゾ抵抗を形成したが、
これと逆にｐ形Ｓｉの半導体基板に、ｒ］形の拡散層抵
抗によりピエゾ抵抗を形成することもできる。Note that the present invention is not limited to the embodiments described above; for example, in the embodiments described above, a piezoresistance is formed using a p-type diffusion layer resistor on an n-type S1 semiconductor substrate.
Conversely, it is also possible to form a piezoresistance on a p-type Si semiconductor substrate using an r]-type diffusion layer resistor.
また、受圧ダイヤフラムの裏面の形成力法についても、
グラインダーによる機械的な研削り法に限らず化学的な
エツヂレグ法により、段差をつ【ノることもできる。Also, regarding the forming force method on the back side of the pressure receiving diaphragm,
In addition to the mechanical grinding method using a grinder, it is also possible to create the steps using the chemical edge reg method.
［発明の効果］
以上説明したように、この発明の構成によれば、受圧ダ
イヤフラムは、周辺部から中心部に向って漸次肉厚で、
当該中心部は所要の厚さに形成されているので、中心部
が剛体として作用し、応力は主としてその周辺部に生じ
て直線性を右する圧力−抵抗変化量特性が得られる。ま
たこれとともに周辺部への応力集中の度合が緩和されて
、ピエゾ抵抗の形成位置に多少の位置ずれが生じても、
感圧特性のばらつきが少なくなる。したがって製品の歩
留りを向上させることができるという利点がある。[Effects of the Invention] As explained above, according to the configuration of the present invention, the pressure receiving diaphragm has a thickness that gradually increases from the periphery toward the center.
Since the central portion is formed to have a required thickness, the central portion acts as a rigid body, and stress is generated mainly in the peripheral portion, resulting in a pressure-resistance variation characteristic that determines linearity. At the same time, the degree of stress concentration on the periphery is alleviated, and even if the piezoresistor formation position is slightly misaligned,
Variation in pressure-sensitive characteristics is reduced. Therefore, there is an advantage that the yield of products can be improved.
第１図〜第４図はこの発明に係る半導体圧力センサの実
施例を示すもので、第１図は縦断面図、第２図は受圧ダ
イヤフラムの形成方法の一例を示す断面図、第３図はピ
エゾ抵抗の抵抗変化を電圧変化どして取出すためのブリ
ッジ回路の回路図、第４図は受圧ダイＡ７フラムの周辺
部の厚さに対する中心部の厚さの比と圧力−抵抗変化量
の非直線性との関係を示す特性図、第５図は従来の」′
導体圧力センサを示す縦断面図、第６図は同上従来例に
おｔｅｌる圧力−抵抗変化量の関係を示す特性図、第７
図は他の従来例を示で縦断面図である。
１：半導体基板、
３．４：ピエゾ抵抗、
５：受圧ダイヤフラム、
５ａ：肉薄部、
５ｂ、５ｃ：円形段部。
代理人 弁理士 則 近 憲 佑代理人 弁理
士 三 俣 弘 文第１図
第２図
第３図
（楚）
第５図
ΔＲＩ Ｒレイζ
一孟：
第４図
Ｐ□
第６図
４゜
第７図1 to 4 show an embodiment of a semiconductor pressure sensor according to the present invention, in which FIG. 1 is a longitudinal cross-sectional view, FIG. 2 is a cross-sectional view showing an example of a method of forming a pressure receiving diaphragm, and FIG. Figure 4 is a circuit diagram of a bridge circuit for extracting the resistance change of a piezoresistor through a voltage change. A characteristic diagram showing the relationship with nonlinearity, Figure 5 is the conventional ''
FIG. 6 is a longitudinal cross-sectional view showing a conductor pressure sensor; FIG.
The figure is a longitudinal sectional view showing another conventional example. 1: Semiconductor substrate, 3.4: Piezoresistor, 5: Pressure-receiving diaphragm, 5a: Thin wall portion, 5b, 5c: Circular step portion. Agent: Kensuke Chika; Agent: Hiroshi Mitsumata; Figure 1; Figure 2; Figure 3; (Chu); figure
Claims (2)
フラムを形成し、前記半導体基板の表面部で且つ当該受
圧ダイヤフラムの周辺部にピエゾ抵抗を形成した半導体
圧力センサにおいて、 前記受圧ダイヤフラムは、周辺部から中心部に向つて漸
次肉厚で、当該中心部は所要の厚さに形成されているこ
とを特徴とする半導体圧力センサ。(1) A semiconductor pressure sensor in which a pressure receiving diaphragm is formed on a semiconductor substrate by machining a recess on the back surface, and a piezoresistor is formed on the front surface of the semiconductor substrate and in a peripheral portion of the pressure receiving diaphragm, wherein the pressure receiving diaphragm is formed in a peripheral portion of the pressure receiving diaphragm. A semiconductor pressure sensor characterized in that the wall thickness gradually increases from the center to the center, and the center is formed to have a required thickness.
って段階的に漸次肉厚に形成されていることを特徴とす
る特許請求の範囲第１項記載の半導体圧力センサ。(2) The semiconductor pressure sensor according to claim 1, wherein the pressure-receiving diaphragm is formed to gradually become thicker in steps from a peripheral portion toward a center portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30136586A JPS63155774A (en) | 1986-12-19 | 1986-12-19 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30136586A JPS63155774A (en) | 1986-12-19 | 1986-12-19 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63155774A true JPS63155774A (en) | 1988-06-28 |
Family
ID=17895988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30136586A Pending JPS63155774A (en) | 1986-12-19 | 1986-12-19 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63155774A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005274332A (en) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | Package for pressure detector, and pressure detector |
| JP2007173487A (en) * | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | Method of processing wafer and device |
| JP2017181436A (en) * | 2016-03-31 | 2017-10-05 | 京セラ株式会社 | Stress sensor |
| US10866203B2 (en) | 2016-03-31 | 2020-12-15 | Kyocera Corporation | Stress sensor |
-
1986
- 1986-12-19 JP JP30136586A patent/JPS63155774A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005274332A (en) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | Package for pressure detector, and pressure detector |
| JP2007173487A (en) * | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | Method of processing wafer and device |
| JP2017181436A (en) * | 2016-03-31 | 2017-10-05 | 京セラ株式会社 | Stress sensor |
| US10866203B2 (en) | 2016-03-31 | 2020-12-15 | Kyocera Corporation | Stress sensor |
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