JPS6315483A - Lead frame for light-emitting diode - Google Patents

Lead frame for light-emitting diode

Info

Publication number
JPS6315483A
JPS6315483A JP61159436A JP15943686A JPS6315483A JP S6315483 A JPS6315483 A JP S6315483A JP 61159436 A JP61159436 A JP 61159436A JP 15943686 A JP15943686 A JP 15943686A JP S6315483 A JPS6315483 A JP S6315483A
Authority
JP
Japan
Prior art keywords
led
light emitting
face
lead frame
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61159436A
Other languages
Japanese (ja)
Inventor
Masahiro Kotaki
正宏 小滝
Kunikazu Hirozawa
広沢 邦和
Hitoshi Kino
等 木野
Kenichi Hayashi
賢一 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP61159436A priority Critical patent/JPS6315483A/en
Publication of JPS6315483A publication Critical patent/JPS6315483A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To suppress dispertion of light and improve the light emitting efficiency by laminating LED elements and making the LED elements have positive and negative electrodes at the same side face. CONSTITUTION:At the tip of an anode lead members 10, a leveled face 11 and a reflected part 12 are formed in a body, One of the electrode parts of an LED is placed on the leveled face 11 and the reflected part 12 has a dike-shaped frame and surrounds about half of the LED in the vicinity of the side circumference face of its LED to be put by the electrodes. Even at the tip of a cathode lead members, the leveled face 21 and the reflected part 22 are formed in a body. The other electrode part of the LED is placed on the leveled face 21 and the reflected part 22 has the dike-shaped frame composing a remained other half of the LED and together with the reflected part 12 surrounds full circumferences of the side circumference face of its LED in the vicinity of the side circumference face of the LED to be put by the electrodes. In addition, the reflected parts 12 and 22 of both lead members 10 and 20 as well as all the surface of the leveled faces 11 and 21 are processed by silver plating and plated layers 13 and 23 are formed. Thus, the above members and others are so laminated that the light emitted in a direction along laminated layer faces having both positive and negative electrodes at the same side face are not dispersed and permit them to reflect in a right angle to laminated faces. As a result, the above performance of the lead frame drastically improves the light emitting efficiency.

Description

【発明の詳細な説明】 [産業上の利用分野1 本発明は発光ダイオード用リードフレームに関する。[Detailed description of the invention] [Industrial application field 1 The present invention relates to a lead frame for a light emitting diode.

[従来の技術] 従来より発光ダイオード(以下rLEDJという)用リ
ードフレームは、正負1対の電極部が両側面に分かれた
L E Dに適するものとして、第5図〜第7図に示す
リードフレームが知られている。
[Prior Art] Conventionally, lead frames for light emitting diodes (hereinafter referred to as rLEDJ) are suitable for LEDs in which a pair of positive and negative electrode portions are separated on both sides, and are lead frames shown in FIGS. 5 to 7. It has been known.

ここで第5図はI!l造時のリードフレームの斜視図、
第6図は第5図に示すリードフレームを切断、整形して
11られたリードフレームの断面図、第7図はLEDを
装着した状態の断面図である。このす−ドフレーム10
1は間隔をへだてて並列に配置された正負1対のリード
部材110.120により構成されている。一方のリー
ド部材110はその先端にLED130を載置する平坦
部111と、載置されるLED130の側周面をその近
傍で囲むように堤状の反射部112が一体的に形成され
ている。そして他方のリード部材120は、その先端が
一方のリード部材110の堤状の反射部112の先端よ
りも突出した状態で配置されている。
Here, Figure 5 shows I! A perspective view of the lead frame during construction,
FIG. 6 is a sectional view of a lead frame obtained by cutting and shaping the lead frame shown in FIG. 5, and FIG. 7 is a sectional view of the lead frame with an LED attached thereto. This board frame 10
1 is composed of a pair of positive and negative lead members 110 and 120 arranged in parallel with a distance between them. One lead member 110 is integrally formed with a flat part 111 on which the LED 130 is placed at its tip, and a bank-like reflective part 112 surrounding the side peripheral surface of the LED 130 placed therein. The other lead member 120 is disposed such that its tip protrudes beyond the tip of the embankment-shaped reflective portion 112 of one lead member 110.

このリードフレーム101にL E D 130が装着
された状態を第7図に示す。この場合LED130は、
一方の面側にある電極部が、反射部をもつ一方のリード
部材110の平坦部111に、導電性ペースト140に
よって接着され載置されている。そして他方の面側にあ
る電掘部は、他方のリード部材120の先端部と金線1
50によって接続されている。
FIG. 7 shows a state in which the LED 130 is attached to this lead frame 101. In this case, the LED 130 is
An electrode portion on one side is adhered and placed on a flat portion 111 of one lead member 110 having a reflective portion using a conductive paste 140. The electrically excavated portion on the other side is connected to the tip of the other lead member 120 and the gold wire 1.
50.

ところで、近時ガリウムナイトライド(GaN)を素子
として、同一面側に正負1対のm極部をもつ青色L E
 D h(開発された。しかしこの同一面側に正負1対
の電極部をもつGaN青色LED230を使用する場合
には、上記のようなリードフレーム101は使用できな
い。そこでこの場合には、第8図に示すように、先端が
平坦な正負1対のリード部材210,220により構成
されたリードフレームが使用されている。このリードフ
レームは、両リード部材210,220の平坦な先端面
がほぼ同じ位置になるように並列に配置され、両先端面
上にGaN青色LED230の両N捗部がそれぞれ導電
性ペースト240により接着され載置されている。
By the way, recently, using gallium nitride (GaN) as an element, a blue color L E with a pair of positive and negative m poles on the same side.
D As shown in the figure, a lead frame is used that is composed of a pair of positive and negative lead members 210 and 220 with flat tips. The GaN blue LEDs 230 are arranged in parallel to each other, and both N-shaped portions of the GaN blue LEDs 230 are adhered and placed on both end faces with conductive paste 240, respectively.

[発明が解決しようとする問題点〕 ところがGaN青色LEDは、1−GaN、n−GaN
およびサブアイ1フ基板を積層し、i −(3aNの一
部に設けられた孔内にn−GaNを目通させて、+−a
taN側の表面に1−GaNとn−GaNによる両電極
部が形成されている。そして通電しこれが発光した場合
に、青色光はi −GONとn−QaNの間から積層面
に沿った方向へ飛び出す。従って光が周囲に分散され、
発光効率が非常に悪いという問題が生じていた。
[Problems to be solved by the invention] However, GaN blue LEDs are 1-GaN, n-GaN
and sub-eye 1F substrates are laminated, and n-GaN is passed through the hole provided in a part of i-(3aN, +-a
Both electrode portions made of 1-GaN and n-GaN are formed on the surface on the taN side. When electricity is applied and it emits light, blue light is emitted from between the i-GON and the n-QaN in a direction along the laminated surface. Therefore, the light is dispersed into the surroundings,
A problem has arisen in that the luminous efficiency is very poor.

本発明は上記問題点を克服するものであり、同一面側に
正負両電極部をもつLEDに適した発光効率のよいリー
ドフレームを提供することを目的とする。
The present invention is intended to overcome the above-mentioned problems, and aims to provide a lead frame with good luminous efficiency and suitable for an LED having both positive and negative electrode parts on the same side.

[問題点を解決するための手段] 本発明は同一面側に正負1対の電極部をもつ発光ダイオ
ードの一方の電極部が載置される平坦部と平坦部と一体
的に形成され載置される発光ダイオードの少なくとも一
部側周而近傍に設けられた反射部とからなる正負一方の
リード部材と、一方のリード部材と間隔をへだてて設け
られ、少なくとも発光ダイA゛−ドの他方の電極部が載
置される平坦部を有する正負の他方のリード部材とを有
する構成としたことを特徴とするものである。
[Means for Solving the Problems] The present invention provides a flat part on which one electrode part of a light emitting diode having a pair of positive and negative electrode parts on the same side is formed integrally with the flat part. a positive and negative lead member, which is provided at a distance from one lead member, and a reflective portion provided near at least one side of the light emitting diode to be used; The present invention is characterized in that it has a configuration in which the other lead member, positive and negative, has a flat part on which an electrode part is placed.

本発明のリードフレームを特徴づける反射部は、16層
され同一面側に正負両電極をもつLEDから飛び出した
光が分散しないように、一定方向へ方向性をもたせるも
のである。この反射部は、LEDの側周面近傍にLED
を囲むように設けられ、少なくとも一方のリード部材の
平坦部と一体的に形成される。この場合反射部は一方の
リード部材の平坦部と一体的に形成した反射部と、他方
のリード部材の平坦部と一体的に形成した反射部とでL
EDの側周面のほぼ全周面を囲むように構成することが
できる。また反射部を一方のリード部材の平坦部のみと
一体的に形成して、LEDの側周面の全周面を囲むよう
に構成してもよい。そして反射部は、平坦部から立ち上
がるに従って外側に傾斜する反射面をその内側に有する
。この反射面は、LEDの8!IWa面に対して45度
゛に近い角麿にすると、光がリード部材の長手方向に沿
った方向へ反射するので好ましい。また反射部の少なく
とも反射面に銀メッキを施すと、より反射効率が良好と
なり好ましい。
The reflective portion that characterizes the lead frame of the present invention has directionality in a certain direction so that the light emitted from the 16-layer LED, which has both positive and negative electrodes on the same side, is not dispersed. This reflective part is located near the side circumferential surface of the LED.
and is formed integrally with the flat portion of at least one lead member. In this case, the reflective part is formed of a reflective part integrally formed with the flat part of one lead member and a reflective part integrally formed with the flat part of the other lead member.
It can be configured to surround almost the entire side circumferential surface of the ED. Alternatively, the reflecting portion may be formed integrally with only the flat portion of one of the lead members so as to surround the entire side circumferential surface of the LED. The reflective portion has a reflective surface inside thereof that slopes outward as it rises from the flat portion. This reflective surface is LED 8! It is preferable to set the angle close to 45 degrees with respect to the IWa surface because light is reflected in a direction along the longitudinal direction of the lead member. Further, it is preferable to silver plate at least the reflective surface of the reflective part, as this will improve reflection efficiency.

このように反射部を有づる本発明のリードフレームは、
積層されて同・−面側に正負両電極部をもつLEDであ
れば、GaNに限らず適用することができる。
The lead frame of the present invention having a reflective portion in this way is
Any LED that is stacked and has both positive and negative electrode parts on the same and negative sides can be applied not only to GaN.

[作用〕 本発明の発光ダイオード用リードフレームにおいて使用
されるLEDは、LED素子が積層されてかつ同一面側
に正負両電極を有する。このようなLEDは、素子が積
層されている間から積層面に沿った方向・\光が飛び出
す。そして飛び出した光は、反射部で反則し、mi面と
ほぼ直角となる方向へ進む。従って光が周囲へ分散され
ず、発光効率が向上する。
[Function] The LED used in the lead frame for a light emitting diode of the present invention has LED elements laminated and has both positive and negative electrodes on the same side. In such an LED, light is emitted from the stacked elements in a direction along the stacked surface. Then, the emitted light is reflected by the reflection part and travels in a direction that is approximately perpendicular to the mi plane. Therefore, light is not dispersed to the surroundings, and luminous efficiency is improved.

[実施例] 以下本発明の具体的実施例を図面に基づき説明する。[Example] Hereinafter, specific embodiments of the present invention will be described based on the drawings.

(実施例1) 第1図〜第3図は、実施例1にかかる発光ダイオード用
リードフレームを示すものであり、第1図は製造時のリ
ードフレームの斜視図、第2図は第1図に示すリードフ
レームを切断、整形して得られた正負1対のリード部材
の断面図、第3図は正負1対のリード部材にGaN青色
LEDを装着した状態の断面図を示す。
(Example 1) Figures 1 to 3 show a lead frame for a light emitting diode according to Example 1. Figure 1 is a perspective view of the lead frame during manufacture, and Figure 2 is a view of Figure 1. FIG. 3 is a cross-sectional view of a pair of positive and negative lead members obtained by cutting and shaping the lead frame shown in FIG.

本実施例のリードフレームは、陽極側に接続される一方
のリード部材(以下「陽極リード部材Jという)10と
、陰極側に接続される他方のリード部材(以下「陰極リ
ード部材」という)20とによりなる。陽極リード部材
1oの先端には、LEDの一方の電極部を載置する平坦
部11と、載置されるLEDの側周面の近傍でそのほぼ
半分を囲む堤状の反射部12が一体的に形成され一部い
る。
The lead frame of this embodiment has one lead member (hereinafter referred to as "anode lead member J") 10 connected to the anode side, and the other lead member (hereinafter referred to as "cathode lead member") 20 connected to the cathode side. It depends on. At the tip of the anode lead member 1o, a flat part 11 on which one electrode part of the LED is placed, and a bank-like reflecting part 12 that surrounds approximately half of the side circumferential surface of the LED to be placed are integrated. Some of them are formed in

陰極リード部材の先端にも、l−Eoの他方の電極部を
載置する平坦部21と、載置されるLEDの側周面の近
傍で上記堤状の反射部12とともに1−ED側周面のほ
ぼ全周を囲む残りのほぼ半分の堤状反射部22が一体的
に形成されている。そして両リード部材10.20の反
射部12.22と平坦部11.21の全表面には銀メッ
キが施され、メッキ層13.23がが形成されている。
Also at the tip of the cathode lead member, there is a flat part 21 on which the other electrode part of l-Eo is placed, and a side part of 1-ED along with the bank-shaped reflective part 12 near the side peripheral surface of the LED to be placed. The remaining approximately half of the embankment-like reflecting portion 22 that surrounds approximately the entire circumference of the surface is integrally formed. The entire surfaces of the reflective portions 12.22 and flat portions 11.21 of both lead members 10.20 are plated with silver to form a plating layer 13.23.

このように形成されている両リード部010,20は、
平坦部11.21がほぼ同−而となるように、並列に配
置されている。この状態で平坦部11.21上にGaN
青色LED30が、導電性ペースト40で接着されて載
置される。
Both lead parts 010 and 20 formed in this way are
The flat parts 11.21 are arranged in parallel so that they are substantially the same. In this state, GaN is placed on the flat part 11.21.
A blue LED 30 is mounted and adhered with a conductive paste 40.

GaN青色LED30は、サファイヤ基板上にn−Ga
N1さらにznをドープして補償した高抵抗r−aaN
を成長させて作られている。そして1−GaN31には
、その一部に設けられた孔内に、n−GaN32の一部
がi −GaN31の表面とほぼ同一となるように貫通
されている。この一部貫通されたn−GaN32と1−
GaN31とにより、同一面側に正負1対の電極部が形
成されている。このGaN青色1− E D 30はn
−GaN32が陰極リード部材20の平坦部21上に、
i −GaN31が陽極リード部材10の平坦部11上
に、それぞれ接着され載置されている。
The GaN blue LED 30 is made of n-Ga on a sapphire substrate.
N1 High resistance r-aaN further doped with Zn to compensate
It is made by growing. A part of the n-GaN 32 is penetrated into a hole provided in a part of the 1-GaN 31 so that the surface of the n-GaN 32 is substantially flush with the surface of the i-GaN 31. This partially penetrated n-GaN32 and 1-
A pair of positive and negative electrode portions are formed on the same side of the GaN 31. This GaN blue 1-ED30 is n
-GaN 32 is placed on the flat part 21 of the cathode lead member 20,
i-GaN 31 is adhered and placed on the flat portion 11 of the anode lead member 10, respectively.

以上のようにして形成された本実施例に係るLED30
に、リード部材10から電圧7.5■の電流を流した。
LED 30 according to this embodiment formed as described above
Then, a current with a voltage of 7.5 cm was applied from the lead member 10.

するとL E D 30は発光し、イーめで良好な青色
光が認められた。これはi −GaN31とn−GaN
32の間から飛び出した青色光が、反射部12.22で
反射して分散しないためであり、発光効率が大幅に向上
した。また本実施例では、反射部のみに銀メッキを施し
たため、製造コストがあまり上がらないという利点が得
られた。
Then, LED 30 emitted light, and a bright and good blue light was observed. This is i-GaN31 and n-GaN
This is because the blue light emitted from between 32 and 32 is not reflected by the reflecting portions 12 and 22 and dispersed, resulting in a significant improvement in luminous efficiency. Further, in this example, since only the reflective portion was plated with silver, there was an advantage that the manufacturing cost did not increase much.

(実Mf942) 第4図は実施例2に係るリードフレームの断面図を示す
。本実施例においては、堤状の反射部52が一連に形成
されている。この反射部52は陽極リード部材50の平
坦部51のみと一体的に形成されている。そして陰極リ
ード部材60の先端は、LEDが載置される平坦部61
が先端面よりも一部突出して形成されている。その他は
上記実施例のリードフレームと同様に形成されている。
(Actual Mf942) FIG. 4 shows a sectional view of a lead frame according to the second embodiment. In this embodiment, a series of bank-shaped reflecting portions 52 are formed. This reflective portion 52 is formed integrally with only the flat portion 51 of the anode lead member 50. The tip of the cathode lead member 60 has a flat portion 61 on which the LED is placed.
is formed so as to partially protrude from the tip surface. The other parts are formed similarly to the lead frame of the above embodiment.

この陰極リード部材60は、陽極リード部材50と接触
することなく少し間隔をへだてた位置で、両リード部材
50.60の両平坦部51.61がほぼ同一となるよう
に並列して配置されている。
This cathode lead member 60 is arranged in parallel with the anode lead member 50 at a position slightly separated from the anode lead member 50 so that both flat portions 51.61 of both lead members 50.60 are substantially the same. There is.

このリードフレームに、上記実施例1で使用したものと
同じGaN青色LED30を導電性ペースト70で接着
し、載置して電圧7.5vの電流を流した。結果は実施
例1の場合と同様、極めて良好な青色光を認めることが
できた。なお本実施例の反射部は、間隙がなく一連に形
成されているため、実施例1の反a+部と比較して、間
隙がない分だけ反射9)r率が向上する。
The same GaN blue LED 30 used in Example 1 was adhered to this lead frame using conductive paste 70, and a current of 7.5 V was applied to the lead frame. As in the case of Example 1, extremely good blue light could be observed as a result. It should be noted that since the reflecting section of this embodiment is formed in a series without any gaps, compared to the anti-a+ section of Embodiment 1, the reflection 9)r ratio is improved due to the lack of gaps.

[発明の効果] 以上説明したように、本発明の発光ダイオード用リード
フレームは、同一面側に正負1対の?[i部をもつ発光
ダイオードの一方の電極部が載置される平坦部と平坦部
と一体的に形成され載置される該発光ダイオードの少な
くとも一部側周面近傍に設けられた反射部とからなる正
負一方のリード部材と、一方のリード部材と間隔をへだ
でて設けられ、少なくとも発光ダイオードの他方の電極
部が載置される平坦部を有する正負の他方のリード部材
とにより構成されてる。これにより積層されて同一面側
に正負両電極部をちつLEDを使用し、積層面に沿った
方向へ飛び出す光を分散することなく積層面と直角の方
向へ反射させることができる。従って、発光効率が大幅
に向上し、表示灯として使用した場合に視認性が良好と
なる。
[Effects of the Invention] As explained above, the lead frame for a light emitting diode of the present invention has a pair of positive and negative leads on the same side. [a flat part on which one electrode part of the light emitting diode having the i part is placed; a reflective part formed integrally with the flat part and provided near the peripheral surface of at least one side of the light emitting diode on which it is placed; and the other positive and negative lead member, which is spaced apart from the one lead member and has a flat part on which at least the other electrode part of the light emitting diode is placed. Teru. This makes it possible to use LEDs that are stacked and have both positive and negative electrodes on the same surface, and to reflect light emitted in a direction along the stacked surface in a direction perpendicular to the stacked surface without being dispersed. Therefore, luminous efficiency is greatly improved and visibility is improved when used as an indicator light.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第3図は本発明の実施例1に係るリードフレー
ムを示し、第1図は製造時のリードフレームの斜視図、
第2図は第1図に示すリードフレームを切断、整形して
1qられたリードフレームの断面図、第3図はリードフ
レームにGaN青色LEDを装着した状態の断面図、第
4図は実施例2に係るリードフレームの断面図、第5図
〜第8図は従来のリードフレームを示し、第5図は)ツ
造時のリードフレームの斜視図、第6図は第5図に示す
リードフレームを切断、整形して得られたリードフレー
ムの断面図、第7図はリードフレームにLEDを装着し
た状態の断面図、第8図は同一面側に正負1対の電極部
をもつLEDを従来のり一ドフレームに装着した状態の
断面図である。 1.101・・・リードフレーム 10.50.110・・・陽極リード部材20.60.
120・・・陰極リード部材11.21.51.61.
111・・・平坦部12.22.52.112・・・反
射部13.23・・・メッキ層 30.230・・・GaN青色発光ダイオード(GaN
青色LED) 3 1−i  −G a N 32−n −G a N 33・・・サフフイA7基板 40.70.140.240−i#電性ペースト130
・・・発光ダイオード(LED)150・・・金線 特許出願人   豊「1合成株式会社 代理人    弁理士 大川 宏 同     弁理士 丸山明夫 第3図     第4図 第5図 第6図 第8図
1 to 3 show a lead frame according to Example 1 of the present invention, and FIG. 1 is a perspective view of the lead frame at the time of manufacture;
Figure 2 is a cross-sectional view of a lead frame obtained by cutting and shaping the lead frame shown in Figure 1, Figure 3 is a cross-sectional view of a GaN blue LED mounted on the lead frame, and Figure 4 is an example. 2, FIGS. 5 to 8 show conventional lead frames, FIG. 5 is a perspective view of the lead frame when assembled, and FIG. 6 is the lead frame shown in FIG. 5. Figure 7 is a cross-sectional view of the lead frame obtained by cutting and shaping the lead frame, Figure 7 is a cross-sectional view of the LED mounted on the lead frame, Figure 8 is a conventional LED with a pair of positive and negative electrodes on the same side. FIG. 3 is a cross-sectional view of the device attached to a glued frame. 1.101...Lead frame 10.50.110...Anode lead member 20.60.
120... Cathode lead member 11.21.51.61.
111...Flat part 12.22.52.112...Reflection part 13.23...Plating layer 30.230...GaN blue light emitting diode (GaN
Blue LED) 3 1-i -G a N 32-n - G a N 33... Saffi A7 board 40.70.140.240-i#Electric paste 130
...Light emitting diode (LED) 150...Gold wire Patent applicant Yutaka 1 Gosei Co., Ltd. Agent Patent attorney Hirodo Okawa Patent attorney Akio Maruyama Figure 3 Figure 4 Figure 5 Figure 6 Figure 8

Claims (4)

【特許請求の範囲】[Claims] (1)同一面側に正負1対の電極部をもつ発光ダイオー
ドの一方の該電極部が載置される平坦部と該平坦部と一
体的に形成され載置される該発光ダイオードの少なくと
も一部側周面近傍に設けられた反射部とからなる正負一
方のリード部材と、該一方のリード部材と間隔をへだて
て設けられ、少なくとも該発光ダイオードの他方の該電
極部が載置される平坦部を有する正負の他方のリード部
材とを有する構成としたことを特徴とする発光ダイオー
ド用リードフレーム。
(1) A flat part on which one of the electrode parts of a light emitting diode having a pair of positive and negative electrode parts on the same side is placed, and at least one of the light emitting diodes which is formed integrally with the flat part and placed on it. a positive and negative lead member comprising a reflective part provided near the circumferential surface of the part, and a flat surface provided at a distance from the one lead member and on which at least the other electrode part of the light emitting diode is placed. 1. A lead frame for a light emitting diode, characterized in that the lead frame has a positive and a negative lead member having a positive and a negative lead member.
(2)他方のリード部材はその平坦部と一体的に形成さ
れ載置される発光ダイオードの残りの側周面近傍に設け
られた反射部とを有し、一方のリード部材の反射部と該
他方のリード部材の該反射部とで該発光ダイオードの側
周面のほぼ全周面を囲む構成とした特許請求の範囲第1
項記載の発光ダイオード用リードフレーム。
(2) The other lead member has a reflective part formed integrally with the flat part and provided near the remaining side peripheral surface of the light emitting diode to be mounted, and the reflective part of the one lead member and the reflective part Claim 1, wherein the reflecting portion of the other lead member surrounds almost the entire side circumferential surface of the light emitting diode.
Lead frame for light-emitting diodes as described in section.
(3)反射部は、立ち上がるに従つて外側に傾斜する反
射面を内側にもつ特許請求の範囲第2項記載の発光ダイ
オード用リードフレーム。
(3) The lead frame for a light emitting diode according to claim 2, wherein the reflecting portion has a reflecting surface on the inside that slopes outward as it rises.
(4)反射部は少なくともその内周面側に銀メッキが施
されている特許請求の範囲第3項記載の発光ダイオード
用リードフレーム。
(4) The lead frame for a light emitting diode according to claim 3, wherein the reflective portion is plated with silver at least on its inner peripheral surface side.
JP61159436A 1986-07-07 1986-07-07 Lead frame for light-emitting diode Pending JPS6315483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61159436A JPS6315483A (en) 1986-07-07 1986-07-07 Lead frame for light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61159436A JPS6315483A (en) 1986-07-07 1986-07-07 Lead frame for light-emitting diode

Publications (1)

Publication Number Publication Date
JPS6315483A true JPS6315483A (en) 1988-01-22

Family

ID=15693712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61159436A Pending JPS6315483A (en) 1986-07-07 1986-07-07 Lead frame for light-emitting diode

Country Status (1)

Country Link
JP (1) JPS6315483A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01310255A (en) * 1988-06-07 1989-12-14 Sanyo Electric Co Ltd Hot-water boiler
JPH0367460U (en) * 1989-10-31 1991-07-01
JPH0367461U (en) * 1989-10-31 1991-07-01
JPH0367462U (en) * 1989-10-31 1991-07-01

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01310255A (en) * 1988-06-07 1989-12-14 Sanyo Electric Co Ltd Hot-water boiler
JPH0367460U (en) * 1989-10-31 1991-07-01
JPH0367461U (en) * 1989-10-31 1991-07-01
JPH0367462U (en) * 1989-10-31 1991-07-01

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