JPS63148640A - Semiconductor substrate washer - Google Patents
Semiconductor substrate washerInfo
- Publication number
- JPS63148640A JPS63148640A JP29490986A JP29490986A JPS63148640A JP S63148640 A JPS63148640 A JP S63148640A JP 29490986 A JP29490986 A JP 29490986A JP 29490986 A JP29490986 A JP 29490986A JP S63148640 A JPS63148640 A JP S63148640A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- semiconductor substrate
- nozzle
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 14
- 238000005406 washing Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は半導体基板の洗浄装置に関し、特にデデインル
ールが1μm以下の微細加工が形成された1Mピッ〉以
上の高集積度のダイナミックメモリ及び8インチ以上の
大径シリコン基板の洗浄に使用されるものである〇
(従来の技術)
従来、半導体基板の洗浄装置としては、大別して2通シ
ある。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a cleaning device for semiconductor substrates, and in particular, to a cleaning device for semiconductor substrates, particularly for cleaning devices with a high degree of integration of 1M pitch or more on which microfabrication with a design rule of 1 μm or less is formed. It is used for cleaning dynamic memories and large diameter silicon substrates of 8 inches or more. (Prior art) Conventionally, there are two types of semiconductor substrate cleaning apparatuses.
(1)パッチ式洗浄装置(第5図図示)図中の1は、底
部にドレイン2を有した洗浄槽である。この洗浄ial
内には洗浄液3が収容されている0この洗浄槽1内には
洗浄液3が収容されている。この洗浄Wil内には、半
導体基板4をセットした牟ヤリア5が載置しである。な
お、図中の6は薬液あるいは純水供給系である。こうし
た装置の操作は次のように行う。まず、半導体基板4を
中子リア5に入れ、キャリア5ごと洗浄槽IK入れる。(1) Patch type cleaning device (shown in Figure 5) 1 in the figure is a cleaning tank having a drain 2 at the bottom. This cleaning ial
A cleaning liquid 3 is stored inside this cleaning tank 1. A cleaning liquid 3 is stored inside this cleaning tank 1. A tray 5 in which a semiconductor substrate 4 is set is placed in the cleaning chamber. Note that 6 in the figure is a chemical solution or pure water supply system. The operation of such a device is as follows. First, the semiconductor substrate 4 is placed in the core rear 5, and the carrier 5 is placed in the cleaning tank IK.
ここで、洗浄@Xには薬液あるいは純水供給系6から液
が供給され、洗浄液3を洗浄槽1から抜くのはドレイン
2により行なう。また、千ヤリア5の洗浄槽への設置及
び移動は、作業者が中子リア5のハンドルの部分を手に
持って行うか又はロボットのアームにより行なう。なお
、上記装置において洗浄槽を数個つなげて設置し順次異
なった洗浄槽で洗浄を行う方法もある。Here, a chemical solution or a liquid is supplied to the cleaning @X from a pure water supply system 6, and the drain 2 is used to drain the cleaning liquid 3 from the cleaning tank 1. Further, the installation and movement of the core rear 5 into the cleaning tank is carried out by an operator holding the handle portion of the core rear 5 in his hand, or by the arm of a robot. In addition, there is also a method in which several cleaning tanks are connected and installed in the above-mentioned apparatus, and cleaning is performed in different cleaning tanks in sequence.
(2)枚葉式洗浄装置(第6図図示)
図中の1)は、回転軸12によシ支持されたメカニカル
チャックである。このメカニカルチャック1)の上部に
は、半導体基板1が水平に吸着されている。この基板4
の右上には、薬液供給ノズル12及び純水供給ノズル1
3が設けられている。上記装置において、前記ノズル1
2からは薬液が吹きかけられ、他方のノズル13からは
純水が吹きかけられる。この際、薬液や純水を均一に吹
きかけるため前記基板1は回転している。(2) Single wafer type cleaning device (shown in FIG. 6) 1) in the figure is a mechanical chuck supported by a rotating shaft 12. A semiconductor substrate 1 is horizontally attracted to the upper part of this mechanical chuck 1). This board 4
At the upper right of the
3 is provided. In the above device, the nozzle 1
A chemical solution is sprayed from the nozzle 2, and pure water is sprayed from the other nozzle 13. At this time, the substrate 1 is rotated in order to uniformly spray the chemical solution or pure water.
また、洗浄後の乾燥装置は、上記(1)、(21に対応
して次のようなものが用いられる。Further, as a drying device after washing, the following one is used corresponding to the above (1) and (21).
(1)パッチ式乾燥装置
半導体基板が同数枚入ったキャリアを乾燥装置内に向か
いあわせて置き、このキャリアの置かれた槽を毎分10
00回転の速度で5分間回転させ、遠心力で水を切り半
導体基板を乾燥させる。(1) Patch type drying device Carriers containing the same number of semiconductor substrates are placed facing each other in the drying device, and the tank in which these carriers are placed is
The substrate was rotated at a speed of 0.00 rpm for 5 minutes, and water was removed by centrifugal force to dry the semiconductor substrate.
(2)枚葉式乾燥装置
半導体基板を水平の状態で保持したまま、半導体基板を
支えているメカニカルチャックの軸を毎分1000回転
の速度で30秒間回転させ、遠心力で水を切シ半導体基
板を乾燥させる。(2) Single wafer dryer While holding the semiconductor substrate in a horizontal position, rotate the shaft of the mechanical chuck that supports the semiconductor substrate at a speed of 1000 revolutions per minute for 30 seconds to remove water using centrifugal force. Dry the substrate.
しかしながら、従来の洗浄装置によれば下記の問題点を
有する。However, conventional cleaning devices have the following problems.
(1)パッチ式洗浄装置
洗浄槽1の中で洗浄液3に半導体基板4及び中ヤリア5
が浸漬されている場合、キャリア5の表面から金属の溶
出があシ、洗浄液3の純度を低くして洗浄効果を低くす
る。また、半導体基板同士の間隔が5冨舅と狭いので洗
浄液3の循環が悪く1μm以下の微細加工があれた半導
体基板に対しては洗浄効果が悪い〇
(2)枚葉式洗浄装置
水あるいは薬液を高速で回転している半導体基板4に吹
きつけるため、液体と基板表面の接触時間が短く、微細
加工された基板を化学的に洗浄する場合、洗浄効果が劣
ることがある〇
(発明が解決しようとする問題点)
本発明は上記事情に鑑みてなされたもので、微細加工さ
れた半導体基板を確実に洗浄し得る半導体基板の洗浄装
置を提供す−ること金目的とする。(1) Semiconductor substrate 4 and middle plate 5 are immersed in cleaning liquid 3 in cleaning tank 1 of patch type cleaning equipment.
If the carrier 5 is immersed in water, the metal may be eluted from the surface of the carrier 5, lowering the purity of the cleaning liquid 3 and reducing the cleaning effect. In addition, because the distance between semiconductor substrates is as narrow as 5 mm, the circulation of the cleaning liquid 3 is poor and the cleaning effect is poor for semiconductor substrates with microfabrication of 1 μm or less.〇(2) Single wafer cleaning equipmentWater or chemical solution Since the liquid is sprayed onto the semiconductor substrate 4 rotating at high speed, the contact time between the liquid and the substrate surface is short, and when chemically cleaning a microfabricated substrate, the cleaning effect may be inferior. The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor substrate cleaning apparatus that can reliably clean a microfabricated semiconductor substrate.
(問題点を解決するための手段)
本発明は、半導体基板を水平に載置するメカニカルチャ
ックと、前記基板上に密Mあるいは近接して設けられ径
が前記基板の直径よシも小さい輪材と、前記基板の上方
に設けられ該基板に純水を注ぐ第1ノズルと、前記基板
の上方に設けられ該基板に薬液を注ぐ第2ノズルとを具
備することを要旨とする。(Means for Solving the Problems) The present invention provides a mechanical chuck for horizontally placing a semiconductor substrate, and a ring material provided densely or close to the substrate and having a diameter smaller than the diameter of the substrate. The gist of the present invention is to include a first nozzle that is provided above the substrate and pours pure water onto the substrate, and a second nozzle that is provided above the substrate and pours a chemical solution onto the substrate.
(作用)
本発明によれば、基板より小さい径の輪材を前記基板に
密着あるいは近接して設けることによシ、基板上に液体
がとどまる時間を自由に設定できるようにし、微細加工
された半導体基板を確実に洗浄できる。(Function) According to the present invention, by providing a ring member having a diameter smaller than that of the substrate in close contact with or in close proximity to the substrate, it is possible to freely set the time period during which the liquid remains on the substrate, and the microfabricated Semiconductor substrates can be reliably cleaned.
(実施例)
以下、本発明の一実施例を第1図〜第3図を参照1て説
明する。(Example) Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3.
図中の21は、回転軸22によシ支持されたメカニカル
チャックである。このメカニカルチャック21の上部に
は、半導体基板23が水平に吸着されている。この基板
23の表面には、例えば基板23の直径より4 xm小
さい直径で高さ20關。21 in the figure is a mechanical chuck supported by a rotating shaft 22. A semiconductor substrate 23 is horizontally attracted to the upper part of this mechanical chuck 21 . On the surface of this substrate 23, there is formed, for example, a diameter 4 x m smaller than the diameter of the substrate 23 and a height of 20 mm.
庫さ2mのテフロン製の輪材24が密着して設けられて
いる。前記基板23の右斜め上には、前記基板23に純
水を注ぐ純水供給ノズル25.薬液を注ぐ薬液供給ノズ
ル26が夫々設けられている。A ring material 24 made of Teflon and having a length of 2 m is provided in close contact with each other. Diagonally above and to the right of the substrate 23 is a pure water supply nozzle 25 for pouring pure water onto the substrate 23. A chemical liquid supply nozzle 26 for pouring the chemical liquid is provided respectively.
こうした構造の洗浄装置においては、まず第1図のよう
に前記基板23をメカニカルチャック21により水平に
保持し、メカニカルチャック21の回転軸22を毎分1
000回転させることで前記基板23を回転させながら
、前記純水供給ノズル25から純水を1001[P/d
の圧力で10秒間吹きつける。次に、ノズル25からの
吹きつけを止め、前記基板23ft5秒間回転させて基
板表面が乾燥したところで回転を止める。次いで、第2
図のように基板23上方から前記輪材24をモータ駆動
で降ろし、基板表面に密着させる。この状態で供給ノズ
ル26から50%弗化水素酸を200分の1に純水で希
釈した液体を基板23の上に200ml注ぐ。しかるに
、この状態では基板23上の液体は輪の中にとどまる。In a cleaning apparatus having such a structure, the substrate 23 is first held horizontally by a mechanical chuck 21 as shown in FIG.
While rotating the substrate 23 by rotating the substrate 23 at 1001[P/d], pure water is supplied from the pure water supply nozzle 25 at
Spray at the same pressure for 10 seconds. Next, the spray from the nozzle 25 is stopped, and the substrate 23ft is rotated for 5 seconds, and when the surface of the substrate is dry, the rotation is stopped. Then the second
As shown in the figure, the ring material 24 is lowered from above the substrate 23 by motor drive and brought into close contact with the surface of the substrate. In this state, 200 ml of a liquid obtained by diluting 50% hydrofluoric acid to 1/200 with pure water is poured onto the substrate 23 from the supply nozzle 26. However, in this state, the liquid on the substrate 23 remains within the ring.
3分間保持した後、輪材24をモータ駆動で上げ、再び
第1図の状態で純水による洗浄を行なう〇
しかして、本発明によれば、基板23上に輪材24を設
けることにより、大口径の基板の洗浄を容易にできる0
同時に、従来の枚葉式洗浄装置では、基板に吹きかけた
液体は短時間で基板から離れるため化学的な洗浄が必ず
しも十分に行なえなかった。これに対し、本発明では基
板23に吹、遣かけた液体を希望する時間だけ基板23
上にとどめることができる。従って、化学的な洗浄が十
分に行なえ、特に1μm以下のツヤターンサイズで微細
加工された基板の表面の凹凸の内部の不純物を除去する
ことができる。After holding for 3 minutes, the ring material 24 is raised by motor drive and cleaning with pure water is performed again in the state shown in FIG. Easy cleaning of large-diameter substrates 0
At the same time, with conventional single-wafer cleaning equipment, the liquid sprayed onto the substrate leaves the substrate in a short period of time, so chemical cleaning cannot always be performed sufficiently. In contrast, in the present invention, the liquid is sprayed onto the substrate 23 for a desired period of time.
You can stay on top. Therefore, chemical cleaning can be carried out sufficiently, and in particular, impurities inside the irregularities on the surface of the substrate microfabricated with a glossy turn size of 1 μm or less can be removed.
なお、上記実施例では、輪材を基板に密着させた場合に
ついて述べたが、これに限らない。例えば第4図のよう
に輪材24と基板23間の距離を1酩あけてもよい。こ
の場合、ノズル26から薬液を毎秒50m1注ぐことに
よシ、基板の上にたまった薬品が輪材24と基板23の
すきま、及び輪材24の上から流れ出す。この場合、輪
材24と基板23間の距離を変えることで、基板上にと
どまる液体の時間を変えることができる〇〔発明の効果
〕
以上詳述した如く本発明によれば、例えば1μm以下に
微細加工された半導体基板を確実に洗浄しえる信頼性の
高い半導体基板の洗浄装置を提供できる。In addition, although the said Example described the case where the ring material was brought into close contact with the board|substrate, it is not limited to this. For example, as shown in FIG. 4, the distance between the ring material 24 and the substrate 23 may be increased by one inch. In this case, by pouring 50 ml of chemical liquid per second from the nozzle 26, the chemical accumulated on the substrate flows out from the gap between the ring material 24 and the substrate 23 and from above the ring material 24. In this case, by changing the distance between the ring material 24 and the substrate 23, it is possible to change the time period during which the liquid stays on the substrate. [Effects of the Invention] As detailed above, according to the present invention, for example, It is possible to provide a highly reliable semiconductor substrate cleaning device that can reliably clean microfabricated semiconductor substrates.
第1図及び第2図は本発明の一実施例に係る半導体基板
の洗浄装置の説明図、第3図は同装置に係る輪材の平面
図、第4図は本発明の他の実施例に係る半導体基板の洗
浄装置の説明図、第5図は従来のパッチ式洗浄装置の説
明図、第6図は従来の枚葉式洗浄装置の説明図である。
2ノ・・・メカニカルチャック、22・・・回転軸、2
3・・・半導体基板、24・・・輪材、25・・・純水
供給ノズル、26・・・薬液供給ノズル〇
出願人代理人 弁理士 鈴 江 武 彦第4図1 and 2 are explanatory diagrams of a semiconductor substrate cleaning apparatus according to one embodiment of the present invention, FIG. 3 is a plan view of a ring material according to the same apparatus, and FIG. 4 is another embodiment of the present invention. FIG. 5 is an explanatory diagram of a conventional patch type cleaning apparatus, and FIG. 6 is an explanatory diagram of a conventional single wafer type cleaning apparatus. 2. Mechanical chuck, 22. Rotating shaft, 2
3... Semiconductor substrate, 24... Ring material, 25... Pure water supply nozzle, 26... Chemical solution supply nozzle 〇 Applicant's agent Patent attorney Takehiko Suzue Figure 4
Claims (2)
と、前記基板上に密着あるいは近接して設けられ径が前
記基板の直径よりも小さい輪材と、前記基板の上方に設
けられ該基板に純水を注ぐ第1ノズルと、前記基板の上
方に設けられ該基板に薬液を注ぐ第2ノズルとを具備す
ることを特徴とする半導体基板の洗浄装置。(1) A mechanical chuck for horizontally placing a semiconductor substrate; a ring material provided in close contact with or close to the substrate and having a diameter smaller than the diameter of the substrate; and a ring material provided above the substrate and attached to the substrate. A semiconductor substrate cleaning apparatus comprising: a first nozzle for pouring water; and a second nozzle provided above the substrate for pouring a chemical onto the substrate.
まで可変することを特徴とする特許請求の範囲第1項記
載の半導体基板の洗浄装置。(2) The distance between the semiconductor substrate and the ring material is 0 to 200 mm.
2. The semiconductor substrate cleaning apparatus according to claim 1, wherein the cleaning apparatus can be varied up to .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61294909A JPH0620063B2 (en) | 1986-12-12 | 1986-12-12 | Semiconductor substrate cleaning equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61294909A JPH0620063B2 (en) | 1986-12-12 | 1986-12-12 | Semiconductor substrate cleaning equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63148640A true JPS63148640A (en) | 1988-06-21 |
JPH0620063B2 JPH0620063B2 (en) | 1994-03-16 |
Family
ID=17813825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61294909A Expired - Lifetime JPH0620063B2 (en) | 1986-12-12 | 1986-12-12 | Semiconductor substrate cleaning equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0620063B2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918642A (en) * | 1982-07-21 | 1984-01-31 | Nec Kyushu Ltd | Manufacturing device of semiconductor device |
JPS5931853A (en) * | 1982-08-11 | 1984-02-21 | Kubota Ltd | Precipitation hardening type alloy |
JPS61144637U (en) * | 1985-02-28 | 1986-09-06 |
-
1986
- 1986-12-12 JP JP61294909A patent/JPH0620063B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918642A (en) * | 1982-07-21 | 1984-01-31 | Nec Kyushu Ltd | Manufacturing device of semiconductor device |
JPS5931853A (en) * | 1982-08-11 | 1984-02-21 | Kubota Ltd | Precipitation hardening type alloy |
JPS61144637U (en) * | 1985-02-28 | 1986-09-06 |
Also Published As
Publication number | Publication date |
---|---|
JPH0620063B2 (en) | 1994-03-16 |
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