JPS63146408A - Manufacture of voltage nonlinear resistor - Google Patents
Manufacture of voltage nonlinear resistorInfo
- Publication number
- JPS63146408A JPS63146408A JP61294051A JP29405186A JPS63146408A JP S63146408 A JPS63146408 A JP S63146408A JP 61294051 A JP61294051 A JP 61294051A JP 29405186 A JP29405186 A JP 29405186A JP S63146408 A JPS63146408 A JP S63146408A
- Authority
- JP
- Japan
- Prior art keywords
- nonlinear resistor
- voltage nonlinear
- paste
- voltage
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000005422 blasting Methods 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052844 willemite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は酸化亜鉛を主成分とし、それ自体が電圧非直線
性を有する焼結体の側面に高抵抗層を形成した電圧非直
線抵抗体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to the production of a voltage non-linear resistor which is composed mainly of zinc oxide and has a high resistance layer formed on the side surface of a sintered body which itself has voltage non-linearity. It is about the method.
従来の技術
電圧非直線抵抗体は一般にバリスタと呼ばれ、電圧安定
化やサージ吸収用の素子として用いられている。BACKGROUND OF THE INVENTION A voltage nonlinear resistor is generally called a varistor, and is used as an element for voltage stabilization and surge absorption.
中でも、酸化亜鉛を主成分としてこれに少量のビスマス
、コバルト、マンガン、アンチモン、クロムなどを添加
した酸化亜鉛形バリスタは、その大きなサージ電流耐量
と優れた電圧非直線性から近年、ギャップレスアレスタ
として従来のシリコンカーバイトバリスタにとって代わ
り広く利用されている。Among them, zinc oxide type varistors, which are mainly composed of zinc oxide and to which small amounts of bismuth, cobalt, manganese, antimony, chromium, etc. are added, have recently become popular as gapless arresters due to their large surge current withstand capacity and excellent voltage nonlinearity. It is widely used as a replacement for silicon carbide varistors.
酸化亜鉛形バリスタをアレスタとして用いる場合、放電
耐量特性が究めて重要な特性要素となる。When a zinc oxide type varistor is used as an arrester, discharge withstand characteristics become an extremely important characteristic element.
放電耐量特性は４／１０μｓの衝撃電流を５分間隔で２
回印加したピーク電流の限界値である。放電耐量特性を
向上させるため最も有効な手段は、側面に高抵抗層を形
成しバリスタ素子側面の絶縁耐圧を上げる方法で、一般
に次の様に作成される。The discharge withstand characteristics are 4/10 μs shock current 2 times at 5 minute intervals.
This is the limit value of the peak current applied twice. The most effective means for improving the discharge withstanding characteristics is to form a high resistance layer on the side surface of the varistor element to increase the withstand voltage on the side surface of the varistor element, which is generally prepared as follows.
まず酸化亜鉛形バリスタの原料粉を適当な大きさに底形
し、７６０’Ｃ以上の温度で仮焼する。得られた仮焼体
の側面に、５１０２又はＺｎ２８１０４および５ｋ１２
０５ 、 Ｂｉ２Ｏ５などを含むペースト状の側面剤を
仮焼体側面に塗布した後、焼結させる。この時、側面剤
はバリスタ素子側面と反応し、Ｚｎ２ＳｉＯ４。First, raw material powder for a zinc oxide varistor is shaped into an appropriate size and calcined at a temperature of 760'C or higher. 5102 or Zn28104 and 5k12 on the side surface of the obtained calcined body.
05. After applying a paste-like side surface agent containing Bi2O5 etc. to the side surface of the calcined body, it is sintered. At this time, the side surface agent reacts with the side surface of the varistor element to form Zn2SiO4.
Ｚｎ７Ｓｂ２Ｃｈｚ などから成る高抵抗層を形成す
る。A high resistance layer made of Zn7Sb2Chz or the like is formed.
この素子の端面を研磨したのち、アルミメタリコンなど
により電極を形成しアレスタ用の電圧非直線抵抗体とす
る。After polishing the end face of this element, electrodes are formed using aluminum metallicon or the like to form a voltage nonlinear resistor for an arrester.
発明が解決しようとする問題点
以上のような工程で製造された従来の電圧非直線抵抗体
は、焼結反応時に側面剤ペーストと仮焼体側面との反応
性が悪くアレスタ用の素子としては、放電耐量特性が低
いという問題を有していた。Problems to be Solved by the Invention Conventional voltage nonlinear resistors manufactured using the above process have poor reactivity between the side surface agent paste and the side surface of the calcined body during the sintering reaction, making them unsuitable as arrester elements. , which had a problem of low discharge withstand characteristics.
本発明はこのような問題点を解決す、るもので、放電耐
量特性の優れた電圧非直線抵抗体の提供を目的とするも
のである。The present invention is intended to solve these problems, and aims to provide a voltage nonlinear resistor with excellent discharge withstand characteristics.
問題点を解決するだめの手段
本発明では上記の問題点を解決するため、仮焼体の側面
をブラストしたのち、５ｉｎｚまたはＺｎ２ＳｉＯ４な
どから放る側面剤ペーストを塗布し焼結させて電圧非直
線抵抗体を得ることを特徴としている。Means to Solve the Problems In the present invention, in order to solve the above problems, after blasting the side surfaces of the calcined body, a side surface paste made of 5inz or Zn2SiO4 is applied and sintered to eliminate the voltage non-linearity. It is characterized by obtaining a resistor.
作用
本発明の電圧非直線抵抗体の製造方法によれば、仮焼体
側面全ブラストしているので、側面剤ペーストと仮焼体
側面との反応性が上がり、その結果高い放電耐１特性を
有する電圧非直線抵抗体を得ることができる。Function: According to the method for manufacturing a voltage nonlinear resistor of the present invention, since the entire side surface of the calcined body is blasted, the reactivity between the side surface agent paste and the side surface of the calcined body increases, and as a result, high discharge resistance characteristics are achieved. It is possible to obtain a voltage nonlinear resistor having the following characteristics.
実施例
以下、本発明の製造方法およびそれにより得られた電圧
非直線抵抗体について実施例に基づき詳細に説明する。EXAMPLES Hereinafter, the manufacturing method of the present invention and the voltage nonlinear resistor obtained thereby will be explained in detail based on examples.
まず、酸化亜鉛の粉末に合計量に対して酸化ビスマス０
．５モル％、酸化アンチモン１．０モル％。First, add 0 bismuth oxide to the total amount of zinc oxide powder.
．． 5 mol%, antimony oxide 1.0 mol%.
酸化コバルト０．６モル％、酸化マンガン０．６モル％
、酸化クロム０．５モル％、酸化ケイ素０．６モル％を
添加し作成した造粒粉を直径４０ｍｍ、厚さ３ｏｍｍの
大きさに圧縮成形し８５０″Ｇ、２時間焼成後冷却して
仮焼体を得た。この仮焼体を端面方向から保持し３０
ｒｐｍのモータで回転させながら＃６０のＳｉＣで１ｏ
秒間ブラストした。なお、酸化亜鉛形バリスタ素子の収
縮は７６０°Ｃ付近から始まるので、この温度以下で仮
焼した試料のブラストは素体強度の点から難しい。ペー
スト状側面剤は５ｉ０２又はＺｎ２ＳｉＯ４７０’Ｅ：
ｋ％、 Ｂ１２０ｇ １０モル％、５ｂ２０５２０モ
ル％の割合で混合した原料粉ト、エチルセルロース２５
ｗｔ％、ブチルカルピトールｙ６ｖｒｔ％から放るバ
インダーとを、重量比１：３の割合で配合し、均一にな
るように混練して作成した。このペースト状側面剤をブ
ラスト処理した仮焼体に塗布し、乾燥後、空気中におい
て１２００″Ｃで焼結させた。このようにして得られた
焼結体の両端面を研磨し、アルミニウムの溶射電極を形
成した。Cobalt oxide 0.6 mol%, manganese oxide 0.6 mol%
A granulated powder made by adding 0.5 mol% of chromium oxide and 0.6 mol% of silicon oxide was compression-molded into a size of 40 mm in diameter and 3 om in thickness, fired at 850"G for 2 hours, cooled, and preheated. A calcined body was obtained. This calcined body was held from the end face direction and was heated for 30 minutes.
1o with #60 SiC while rotating with rpm motor
Blast for seconds. It should be noted that since the shrinkage of zinc oxide type varistor elements starts around 760°C, it is difficult to blast samples calcined below this temperature from the viewpoint of the strength of the element body. Paste-like surfacing agent is 5i02 or Zn2SiO470'E:
Raw material powder mixed at a ratio of k%, B120g 10 mol%, 5b20520 mol%, ethyl cellulose 25
wt%, butylcarpitol y and a binder released from 6vrt% were blended at a weight ratio of 1:3 and kneaded uniformly. This paste-like side surface agent was applied to the blasted calcined body, and after drying, it was sintered in the air at 1200"C. Both end faces of the sintered body thus obtained were polished, and aluminum A sprayed electrode was formed.
図は以上のようにして得た電圧非直線抵抗体の断面図で
、１は酸化亜鉛を主成分とする焼結体、２は側面高抵抗
層、３はアルミニウムの溶射電極である。第１表に本発
明による電圧非直線抵抗体の初期特性、放電耐量特性を
示す。比較のため仮焼体をブラスト処理せずにペースト
状側面剤を塗布し作成した試料の諸特性についても並記
した。The figure is a cross-sectional view of the voltage nonlinear resistor obtained as described above, in which 1 is a sintered body whose main component is zinc oxide, 2 is a side high-resistance layer, and 3 is a sprayed aluminum electrode. Table 1 shows the initial characteristics and discharge withstand characteristics of the voltage nonlinear resistor according to the present invention. For comparison, the characteristics of a sample prepared by applying a paste-like surfacing agent to a calcined body without blasting are also listed.
初期特性はｎ＝１０の平均値、放電耐１特性はｎ＝６の
平均値で、４／１０μｓのインパルスを６分間隔で同一
方向に２回ずつ印加し、５０に人よりステップアップし
た値である。The initial characteristic is the average value of n = 10, and the discharge resistance 1 characteristic is the average value of n = 6. A 4/10 μs impulse was applied twice in the same direction at 6 minute intervals, and the value was stepped up from the human value to 50. It is.
（以 下 余 白）
初期特性は従来例と本発明例の差はほとんど見られない
が、放電耐量特性が大巾に向上していることがわかる。(Margin below) Although there is almost no difference in the initial characteristics between the conventional example and the example of the present invention, it can be seen that the discharge withstand characteristics are greatly improved.
これは、仮焼体表面がブラスト処理により荒れているの
でペースト状側面剤と仮焼体との反応性が向上したため
と考えられる。This is thought to be because the surface of the calcined body was roughened by the blasting process, which improved the reactivity between the paste-like side surface agent and the calcined body.
本実施例においてはペースト状側面剤として５１０２系
、 Ｚｎ２ＳｉＯ４系の二種類のものを用いた場合につ
いてのみ記載したが、一部組酸の変化すなわちＢｉ２Ｏ
５＊ ５ｂ２０ｓ添加量、もしくは他の添加物の添加、
例えばＣｏ２Ｏ３、ＺｎＯ、ガラスフリットなどを行な
っても本発明の効果に変わシはない。In the present example, only the case where two types of paste-like surface additives, 5102 series and Zn2SiO4 series, were used was described.
5* Addition of 5b20s or other additives,
For example, the effects of the present invention will not change even if Co2O3, ZnO, glass frit, etc. are used.
発明の効果
以上のように本発明によれば、酸化亜鉛形バリスタ素子
の仮焼体の側面全ブラストし、５１０２又はＺｎ２Ｓｉ
Ｏ４などから成る側面剤を塗布後、焼結することにより
放電耐量特性の優れた電圧非直線抵抗体を製造すること
ができる。Effects of the Invention As described above, according to the present invention, the entire side surface of the calcined body of the zinc oxide type varistor element is blasted, and 5102 or Zn2Si
A voltage nonlinear resistor with excellent discharge withstand characteristics can be manufactured by applying a side surface agent made of O4 or the like and then sintering it.
図は本発明の製造方法による電圧非直線抵抗体の断面図
である。
１・・・・・・焼結体、２・・・・・・高抵抗層、３・
・・・・・電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名１−
一一渣す陪１本
２−−−１％人仇１
３−ｍ−電極The figure is a sectional view of a voltage nonlinear resistor produced by the manufacturing method of the present invention. 1... Sintered body, 2... High resistance layer, 3...
·····electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person1-
11 residues 1 electrode 2---1% human enemy 1 3-m-electrode
Claims (2)
性を示すよう添加物を加えた円柱状成形体を仮焼し得ら
れた仮焼体の少なくとも側面をブラストした後、ペース
ト状側面剤を塗布し、前記仮焼温度以上で焼結し側面に
高抵抗層を形成した電圧非直線抵抗体の製造方法。(1) After calcining a cylindrical molded body containing zinc oxide as the main component and adding additives so that the sintered body itself exhibits voltage nonlinearity and blasting at least the side surfaces of the resulting calcined body, paste A method for manufacturing a voltage nonlinear resistor, which is coated with a side surface agent and sintered at a temperature equal to or higher than the calcination temperature to form a high resistance layer on the side surface.
ｎ＿２ＳｉＯ＿４が含まれている特許請求の範囲第１項
に記載の電圧非直線抵抗体の製造方法。(2) At least SiO_2 or Z in the paste-like surfacing agent
The method for manufacturing a voltage nonlinear resistor according to claim 1, wherein n_2SiO_4 is included.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294051A JPS63146408A (en) | 1986-12-10 | 1986-12-10 | Manufacture of voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294051A JPS63146408A (en) | 1986-12-10 | 1986-12-10 | Manufacture of voltage nonlinear resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63146408A true JPS63146408A (en) | 1988-06-18 |
Family
ID=17802643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61294051A Pending JPS63146408A (en) | 1986-12-10 | 1986-12-10 | Manufacture of voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63146408A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0348401A (en) * | 1989-07-17 | 1991-03-01 | Ngk Insulators Ltd | Manufacture of voltage nonlinear resistor |
-
1986
- 1986-12-10 JP JP61294051A patent/JPS63146408A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0348401A (en) * | 1989-07-17 | 1991-03-01 | Ngk Insulators Ltd | Manufacture of voltage nonlinear resistor |
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