JPS6314466Y2 - - Google Patents
Info
- Publication number
- JPS6314466Y2 JPS6314466Y2 JP1983158834U JP15883483U JPS6314466Y2 JP S6314466 Y2 JPS6314466 Y2 JP S6314466Y2 JP 1983158834 U JP1983158834 U JP 1983158834U JP 15883483 U JP15883483 U JP 15883483U JP S6314466 Y2 JPS6314466 Y2 JP S6314466Y2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- circuit element
- metal body
- semiconductor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【考案の詳細な説明】
本考案は樹脂封止型半導体装置の構造に関する
もので、特に放熱良好にして実装の容易な安価な
半導体装置を提供するものである。[Detailed Description of the Invention] The present invention relates to the structure of a resin-sealed semiconductor device, and particularly provides an inexpensive semiconductor device that has good heat dissipation and is easy to mount.
第１図ａ、ｂ、ｃは本願考案者等が先に提案し
た従来装置（実願昭56−40095号＝実開昭57−
154161号）を示しａ図は半導体回路素体の平面
図、ｂ図、ｃ図は夫々回路素体挿入後の平面図及
び正面断面図で先ず回路素体Ａは電極金属板４及
び接属金属板４′間に半導体（ダイオード）チツ
プ３を挾持し、これをリード端子５と共に半田付
等により一体に形成される。次に熱伝導の良い金
属物（例えばアルミニウム）６をｂ、ｃ図に示す
様な断面凹状形状に加工したものに、インジエク
シヨンモールド方法で樹脂枠７を金型（図示しな
い）を使用して一体に成型する。完成した金属体
６と四角状樹脂枠７の一体ケースに封止樹脂（例
えばエポキシ樹脂）８を注入し、その中に回路素
体Ａを挿入して樹脂封止する。 Figures 1a, b, and c show the conventional device previously proposed by the present inventors (Utility Application No. 56-40095 = Utility Model Application No. 57-
154161), Figure A is a plan view of the semiconductor circuit element, Figures B and C are respectively a plan view and a front cross-sectional view after the circuit element is inserted. A semiconductor (diode) chip 3 is sandwiched between the plates 4', and is integrally formed with the lead terminals 5 by soldering or the like. Next, a metal object (for example, aluminum) 6 with good thermal conductivity is processed into a concave cross-sectional shape as shown in figures b and c, and a resin frame 7 is attached to it using a mold (not shown) using an injection molding method. molded into one piece. A sealing resin (for example, epoxy resin) 8 is injected into the completed integrated case of the metal body 6 and the rectangular resin frame 7, and the circuit element A is inserted therein and sealed with the resin.
この構成によれば金属体６にはｂ図に示す凹凸
部６ａ及び段付き部６ｂより成る溝（へこみ部）
を設けることによつて、樹脂枠７との密着性及び
抜け止めを防止する効果があり、樹脂枠７の外側
（二辺）を金属体６で覆つている為、樹脂枠７に
対して熱膨張係数の違いによる影響はなくなる。
回路素体Ａと金属体６は、電気的に絶縁されてい
る必要がある。該素体Ａと金属物６は、絶縁耐圧
を一定に保つには樹脂枠７と封止樹脂８の厚さ９
によつて決まり、樹脂部７ａは、素体Ａを挿入す
る時のストツパーの役目をなし、安定した間隙部
分になる。又、金属体は断面凹状形をしているた
め、側面からの放熱効果がプラスされ、かつ、製
作後は安定した形状を維持でき、実装時に放熱フ
イン等（図示せず）との間で反りが発生しない等
の利点がある。しかし係る従来装置は樹脂部７ａ
の厚み（金属体底面からの高さ）は精々0.1mm程
度であり、回路素体Ａの挿入時電極金属板４と金
属体６の底面との間の封脂樹脂が十分でない時は
この間に空隙が生じて、該電極金属板と前記底面
との間で沿面放電を生じ、又回路素体Ａが正しく
挿入されない状態では該電極金属板と金属体底面
間で短絡する等の問題がある。本考案は係る欠点
を解消した半導体装置を提供するものであり、電
極金属板上に半導体素子を固着し、これらを接続
金属板により所要回路に接続してリード端子を設
けた半導体回路素体を断面凹状金属体と前記断面
凹状金属体の対向面に接するように形成された四
角状絶縁枠よりなるケースに収容して樹脂封止す
るようにした樹脂封止型半導体装置において、前
記断面凹状金属体の前記四角状絶縁枠に囲まれた
底部全表面に絶縁層を設けると共に該絶縁層の一
表面に凸部を設け、且つ前記絶縁枠、絶縁層及び
凸部を同一絶縁材により形成したことを特徴とす
るものである。 According to this configuration, the metal body 6 has a groove (a recessed part) consisting of an uneven part 6a and a stepped part 6b as shown in FIG.
By providing this, it has the effect of adhesion to the resin frame 7 and preventing it from coming off, and since the outside (two sides) of the resin frame 7 is covered with the metal body 6, heat is not applied to the resin frame 7. The effect of differences in expansion coefficients disappears.
The circuit element A and the metal body 6 need to be electrically insulated. The thickness 9 of the resin frame 7 and the sealing resin 8 is required to keep the dielectric strength constant between the element body A and the metal object 6.
The resin portion 7a serves as a stopper when inserting the element A, and becomes a stable gap portion. In addition, since the metal body has a concave cross-section, it has an added heat dissipation effect from the side, and can maintain a stable shape after manufacturing, preventing warping between it and heat dissipation fins (not shown) during mounting. There are advantages such as no occurrence of However, in the conventional device, the resin part 7a
The thickness (height from the bottom of the metal body) is approximately 0.1 mm at most, and if there is insufficient sealing resin between the electrode metal plate 4 and the bottom of the metal body 6 when inserting the circuit element A, A gap is created, causing creeping discharge between the electrode metal plate and the bottom surface, and if the circuit element A is not inserted correctly, there are problems such as a short circuit between the electrode metal plate and the bottom surface of the metal body. The present invention provides a semiconductor device that eliminates such drawbacks, and includes a semiconductor circuit element in which semiconductor elements are fixed on electrode metal plates, these are connected to the required circuits by connecting metal plates, and lead terminals are provided. In a resin-sealed semiconductor device, the resin-sealed semiconductor device is housed in a case consisting of a metal body having a concave cross-section and a rectangular insulating frame formed to be in contact with opposing surfaces of the metal body and the metal body having a concave cross-section and is sealed with a resin. An insulating layer is provided on the entire bottom surface of the body surrounded by the rectangular insulating frame, and a convex portion is provided on one surface of the insulating layer, and the insulating frame, the insulating layer, and the convex portion are formed of the same insulating material. It is characterized by:
第２図ａ、ｂ、ｃは本考案の一実施例を示す回
路素体の平面図、ケースの平面図及び樹脂封止後
のｂ図Ａ−A′断面図で従来例と同一符号は同等
部分を示す。先ず回路素体Ａは従来装置と同様に
して電極金属板４、ダイオードチツプ３、接属金
属板４′及びリード端子５を半田付により一体に
形成される。なお、ａ図は三相ブリツジダイオー
ドの例を示す。次にケースは凹状金属体６を金型
（図示せず）にセツトし、周知のインジエクシヨ
ンモールド方法により樹脂枠７を形成すると同時
に底面全面に樹脂層（絶縁層）７ｂを形成し、更
に回路素体Ａの案内用凸部７ｃを形成する。な
お、前記凸部７ｃは金型に予め凸部形状に応じた
溝を形成し、該底面の樹脂層７ｂの形成の際に該
溝を埋めるようにすればよく、又該溝の存在によ
り樹脂層７ｂは全面にわたりほぼ均一に形成でき
る利点がある。このように構成すれば樹脂枠７に
囲まれた金属体６の底面上全面に樹絶層７ｂが形
成されているため、回路素体Ａと金属体６の絶縁
が完全に維持され、沿面放電或は短絡事故が防止
できる。又、絶縁層７ｂの所要表面に回路素体Ａ
の形状に応じた案内用凸部が形成されているため
組立時の位置決が容易である。更に該凸部の存在
により絶縁層７ｂの形成時にその厚さを任意にし
かも全面にわたりほぼ均一に形成でき、回路素体
Ａからの放熱を良好にすることができる。なお、
図中６ｃは樹脂枠７の離脱防止用突起である。 Figures 2a, b, and c are a plan view of a circuit element, a plan view of a case, and a sectional view taken along the line A-A' after resin sealing, showing an embodiment of the present invention, and the same symbols as the conventional example are the same. Show parts. First, the circuit element A is integrally formed with an electrode metal plate 4, a diode chip 3, a connecting metal plate 4', and a lead terminal 5 by soldering in the same manner as in the conventional device. Note that Figure a shows an example of a three-phase bridge diode. Next, for the case, the concave metal body 6 is set in a mold (not shown), a resin frame 7 is formed by a well-known injection molding method, and at the same time a resin layer (insulating layer) 7b is formed on the entire bottom surface. A guiding convex portion 7c of the circuit element A is formed. The convex portion 7c may be formed by forming a groove in advance in the mold according to the shape of the convex portion, and filling the groove when forming the resin layer 7b on the bottom surface. The layer 7b has the advantage that it can be formed substantially uniformly over the entire surface. With this configuration, since the tree break layer 7b is formed on the entire bottom surface of the metal body 6 surrounded by the resin frame 7, the insulation between the circuit element A and the metal body 6 is completely maintained, and creeping discharge is prevented. Alternatively, short circuit accidents can be prevented. Further, the circuit element A is formed on the required surface of the insulating layer 7b.
Since a guide protrusion is formed according to the shape of the guide, positioning during assembly is easy. Further, due to the presence of the convex portion, the thickness of the insulating layer 7b can be arbitrarily determined and substantially uniform over the entire surface, and heat dissipation from the circuit element body A can be improved. In addition,
In the figure, 6c is a protrusion for preventing the resin frame 7 from coming off.
以上の実施例においては凸部７ｃを線状に形成
した例について説明したが点状に形成してもよ
い。更に回路素体Ａとしてこの他センタータータ
ツプ型、ダブラー型及び単相全波整流型等にも同
様に実施できることは明らかである。 In the above embodiment, an example in which the convex portion 7c is formed in a linear shape has been described, but it may be formed in a dot shape. Furthermore, it is obvious that the circuit element A can be similarly implemented in other types such as a center tap type, a doubler type, and a single-phase full-wave rectification type.
以上の説明から明らかなように、本考案によれ
ば放熱効果の良好な半導体装置が安価、経済的に
提供できるので実用上の効果は大きい。 As is clear from the above description, according to the present invention, a semiconductor device with good heat dissipation effect can be provided at a low cost and economically, so that the present invention has great practical effects.
第１図ａ及びｂ、ｃは回路素体の平面図及び従
来装置の平面図及び正面図、第２図ａ及びｂ、ｃ
は本考案装置に適用する半導体回路素体の平面図
及び本考案の一実施例装置の回路素体挿入前及び
挿入後の平面図及び正面図である。図において３
は半導体チツプ４，４′は電極及び接続金属板、
５はリード端子、６は断面凹状金属体、６ａは凹
凸部、６ｂは段付き部、６ｃは突部、６ｄ，６
d′は取付部、７は絶縁（樹脂）枠、７ｂは絶縁
層、７ｃは凸部、８は封止樹脂、Ａは回路素体で
ある。
Fig. 1 a, b, c is a plan view of the circuit element and a plan view and front view of the conventional device; Fig. 2 a, b, c
1 is a plan view of a semiconductor circuit element applied to a device of the present invention, and a plan view and a front view of an embodiment of the device of the present invention before and after insertion of the circuit element. In the figure 3
are semiconductor chips 4, 4' are electrodes and connection metal plates,
5 is a lead terminal, 6 is a metal body with a concave cross section, 6a is an uneven portion, 6b is a stepped portion, 6c is a protrusion, 6d, 6
d' is a mounting portion, 7 is an insulating (resin) frame, 7b is an insulating layer, 7c is a convex portion, 8 is a sealing resin, and A is a circuit element.
Claims (1)
接続金属板により所要回路に接続してリード端子
を設けた半導体回路素体を断面凹状金属体と前記
断面凹状金属体の対向面に接するように形成され
た四角状絶縁枠よりなるケースに収容して樹脂封
止するようにした樹脂封止型半導体装置において
前記断面凹状金属体の前記四角状絶縁枠に囲まれ
た底部全表面に絶縁層を設けると共に該絶縁層の
一表面に前記半導体回路素体の案内用凸部を設
け、且つ前記絶縁枠、絶縁層及び凸部を同一絶縁
材により形成したことを特徴とする樹脂封止型半
導体装置。 A semiconductor element is fixed on an electrode metal plate, and these are connected to a required circuit by a connecting metal plate, so that a semiconductor circuit element provided with lead terminals is in contact with a metal body having a concave cross section and an opposing surface of the metal body having a concave cross section. In a resin-sealed semiconductor device that is housed in a case made of a rectangular insulating frame and sealed with resin, an insulating layer is provided on the entire bottom surface of the metal body having a concave cross section surrounded by the rectangular insulating frame. A resin-sealed semiconductor characterized in that a convex portion for guiding the semiconductor circuit element is provided on one surface of the insulating layer, and the insulating frame, the insulating layer, and the convex portion are formed of the same insulating material. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983158834U JPS6066037U (en) | 1983-10-14 | 1983-10-14 | Resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983158834U JPS6066037U (en) | 1983-10-14 | 1983-10-14 | Resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6066037U JPS6066037U (en) | 1985-05-10 |
| JPS6314466Y2 true JPS6314466Y2 (en) | 1988-04-22 |
Family
ID=30349807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983158834U Granted JPS6066037U (en) | 1983-10-14 | 1983-10-14 | Resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066037U (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111943U (en) * | 1982-01-27 | 1983-07-30 | 新電元工業株式会社 | Resin-encapsulated semiconductor device |
-
1983
- 1983-10-14 JP JP1983158834U patent/JPS6066037U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6066037U (en) | 1985-05-10 |
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