JPS631440A - Gaseous phase reaction apparatus - Google Patents
Gaseous phase reaction apparatusInfo
- Publication number
- JPS631440A JPS631440A JP14427186A JP14427186A JPS631440A JP S631440 A JPS631440 A JP S631440A JP 14427186 A JP14427186 A JP 14427186A JP 14427186 A JP14427186 A JP 14427186A JP S631440 A JPS631440 A JP S631440A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- fork
- foreign matter
- mounting table
- push
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract description 7
- 239000007792 gaseous phase Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims description 28
- 238000010574 gas phase reaction Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 4
- 239000010935 stainless steel Substances 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 109
- 239000007789 gas Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HXNZTJULPKRNPR-UHFFFAOYSA-N borinine Chemical compound B1=CC=CC=C1 HXNZTJULPKRNPR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分升コ
本発明は気相反応装置に関する。更に詳細には、本発明
はウェハ載置台およびウェハフォークなどの表面にポリ
シリコンの薄膜が施された気相反応装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Applications] The present invention relates to a gas phase reactor. More specifically, the present invention relates to a gas phase reaction apparatus in which a thin film of polysilicon is applied to the surfaces of a wafer mounting table, a wafer fork, and the like.
［従来技術コ
薄膜の形成方法として、゛ト導体工業において一般に広
く用いられているものの一つに、気相成長法（ＣＶＤ：
Ｃｈｅｍｉｃａｌ ＶａｐｏｕｒＤｅｐｏｓ ｉ ｔ
ｉｏｎ）がある。ＣＶＤとは、ガス状物質を化学反応
で固体物質にし、基板上に堆積することをいう。[Prior art] One of the methods widely used in the conductor industry as a method for forming thin films is the vapor deposition method (CVD:
Chemical Vapor Depos it
ion). CVD refers to turning a gaseous substance into a solid substance through a chemical reaction and depositing it on a substrate.
ＣＶＤの特徴は、成長しようとする薄膜の融点よりかな
り低い堆積７ｕ度で種々の薄膜が得られること、および
、成長した薄膜の純度が高＜、ＳＩやＳｉｔの熱酸化膜
１−に成長した場合も電気的特性が安定であることで、
広く゛ｒ導体表面のパッシベーション膜として利用され
ている。The characteristics of CVD are that various thin films can be obtained at a deposition temperature of 7 u, which is considerably lower than the melting point of the thin film to be grown, and that the purity of the grown thin films is high. Also, the electrical characteristics are stable,
It is widely used as a passivation film on the surface of conductors.
Ｃ Ｖ Ｉ）による薄膜形成は、例えば５００゜Ｃ程度
に加熱したウェハに反応ガス（例えば、ＳｉＨ４＋０２
，またはＳ ｉ ＨＱ ＋ＰＨＪ ＋０２ ）を供給し
て行われる。−Ｌ記の反応ガスはＮ２ガスをキャリャと
して反応炉（ベルジャ）内のウェハに吹きつけられ、１
亥ウェハの表面にＳｉ０２あるいはフォスフォシリケー
トガラス（ＰＳＧ）の薄膜を形成する。また、ＳｉＯ２
とＰＳＧとの２相成膜が行われることもある。Thin film formation by CVI) involves injecting a reactive gas (for example, SiH4+02) onto a wafer heated to about 500°C.
, or S i HQ +PHJ +02). - The reaction gas described in L is blown onto the wafer in the reactor (belljar) using N2 gas as a carrier, and
A thin film of Si02 or phosphosilicate glass (PSG) is formed on the surface of the wafer. Also, SiO2
Two-phase film formation of PSG and PSG may also be performed.
このようなＣＶＤによる薄膜形成操作を行うために従来
から用いられている装置の一例を第２図に郎分断面図と
して示す。An example of an apparatus conventionally used for performing such a thin film forming operation by CVD is shown in a cross-sectional view in FIG.
第２図において、反応炉（ペルジャ）１は、円錐状のバ
ッファ２を円錐状のカバー３で覆い、上記バッファ２の
周囲にリング状のウェハ載置台４を駆動機構５で回転駆
動可能、または自公転可能に設置するとともに、上記ウ
ェハ載置台の上に被加工物であるウェハ６を順次に供給
し、該ウェハを順次に搬出するウェハフォーク７を設け
て構成されている。ウェハフォークを炉内に導入するた
めの開閉可能なゲート部１１が反応炉に設けられている
。In FIG. 2, a reactor (Pelger) 1 has a conical buffer 2 covered with a conical cover 3, and a ring-shaped wafer mounting table 4 that can be rotated around the buffer 2 by a drive mechanism 5, or The wafer fork 7 is installed so as to be able to rotate around its axis, and is provided with a wafer fork 7 that sequentially supplies wafers 6, which are workpieces, onto the wafer mounting table and sequentially carries out the wafers. The reactor is provided with an openable and closable gate section 11 for introducing the wafer fork into the reactor.
前記円錐状カバー３の頂点付近に反応ガス送入管８およ
び９が接続されている。使用する反応ガスのＳｉＨ４お
よび０２はそれぞれ別のガス送入管により反応炉に送入
しなければならない。例えば、ＳｉＨ４を送入管８で送
入し、そして、０２を送入管９で送入する。また、ＰＨ
ａを使用する場合、ＳｉＨ４とともに送入できる。取り
扱いを容易にするために、反応ガスのＳｉＨｑ及び０２
はＮ２キャリアガスで希釈して使用することが好ましい
。Reaction gas feed pipes 8 and 9 are connected near the apex of the conical cover 3. The reaction gases SiH4 and 02 used must be fed into the reactor through separate gas feed pipes. For example, SiH4 is fed through the feed pipe 8, and 02 is fed through the feed pipe 9. Also, PH
When using a, it can be delivered together with SiH4. For ease of handling, the reaction gases SiHq and 02
is preferably used after being diluted with N2 carrier gas.
前記のウェハ載置台４の直下には僅かなギャップを介し
て加熱手段１０が設けられていてウェハ６を所定のＩｕ
度（例えば約５００゜Ｃ）に加熱し、化学反応によって
生成される物質（Ｓｉ０２またはＰＳＧ）の薄膜をウェ
ハ６の表面に生成せしめる。A heating means 10 is provided directly below the wafer mounting table 4 with a slight gap therebetween, and heats the wafer 6 to a predetermined Iu.
The wafer 6 is heated to a temperature of about 500° C. (for example, about 500° C.) to form a thin film of a substance (Si02 or PSG) produced by a chemical reaction on the surface of the wafer 6.
［発明が解決しようとする問題点］
ウェハ表面への成膜が終了した後、反応炉内からのウェ
ハの取り出しは、第３図に示されるように以下の動作順
序で行われる。[Problems to be Solved by the Invention] After the film formation on the wafer surface is completed, the wafer is taken out from the reactor in the following sequence of operations as shown in FIG.
（１）ウェハ載置台４内に収納されていた突き上げピン
１２が上昇してウェハ載置台上の成膜済ウェハ６を持ち
上げる；
（２）持ちＬげられたウェハ６とウェハ載置台４との間
にフォーク７が進入する；
（３）突き−１−げピンｌ２が下降し、ウェハ６をフォ
ーク７に乗せる；
（４）フォーク７が移動することによりウェハを反応炉
外へ搬出する。(1) The push-up pin 12 housed in the wafer mounting table 4 rises and lifts the film-formed wafer 6 on the wafer mounting table; (2) The raised wafer 6 and the wafer mounting table 4 In between, the fork 7 enters; (3) the thrust pin 12 descends and the wafer 6 is placed on the fork 7; (4) the fork 7 moves to carry the wafer out of the reactor.
反応炉内ヘウェハを搬入する動作はほぼこの逆の動作と
なる。The operation of carrying the wafer into the reactor is almost the reverse of this operation.
成膜反応の進行につれて、反応炉内、特に反応炉の内壁
面にＳｉＯおよび／またはＳｉ０２等の酸化物のフレー
クが成長●付着してくる。これらの異物は僅かな振動や
気流により壁面から剥れ落ちて炉内を浮遊する。そして
、ウェハ載置台，突き１・，げピンおよびフォークなど
の表面に落丁●付首する。As the film-forming reaction progresses, flakes of oxides such as SiO and/or Si02 grow and adhere to the inside of the reactor, especially on the inner wall surface of the reactor. These foreign substances are peeled off from the wall by slight vibrations and air currents and floated in the furnace. Then, the wafer is attached to the surface of the wafer mounting table, pins, fork, etc.
前記のウェハ搬入Φ搬出動作において，反応炉内でウェ
ハに直接接触するものとして、ウェハ載置台の載置而，
突き上げピンの上端而およびフォークのウェハ載置而等
が考えられる。従って、これらの部材の表面に落下●付
着している異物類は当然ウェハの裏面にも付青してくる
。また、ウェハを取り扱う部材に異物類が付着している
と、ウェハの裏面に限らず、表（おちて）而にも異物類
が付着する可能性が大きくなる。In the above-mentioned wafer loading/unloading operation, the wafer mounting table is placed in direct contact with the wafer in the reactor.
Possible locations include the upper end of the push-up pin and the wafer placement location of the fork. Therefore, foreign matter that falls and adheres to the surface of these members will naturally stain the back surface of the wafer. Further, if foreign substances are attached to the members that handle the wafer, there is a high possibility that the foreign substances will be attached not only to the back side of the wafer but also to the front side of the wafer.
このように、ウェハに異物類が付着すると成膜にピンホ
ールを発生させる。In this way, when foreign matter adheres to the wafer, pinholes are generated in the film formation.
これら異物がウェハの表面に付着して成膜にピンホール
を発生させると半導体素子の製造歩留りが著しく低下さ
れる。If these foreign substances adhere to the surface of the wafer and cause pinholes in the film formation, the manufacturing yield of semiconductor devices will be significantly reduced.
前記のようなウェハ取扱の際における異物付７ｔの問題
はＣ Ｖ Ｉ）薄膜形成装置に限らず、反応炉および該
反応炉内にウェハを搬入●搬出するために前記のような
手段を使用する気相反応装置類、例えば、エビタキシャ
ル装置，拡散炉，酸化炉，イオン打ち込み装置，スパッ
タリング装置，蒸着装置等についても認められる。The above-mentioned problem of 7 tons of foreign matter when handling wafers is not limited to C V I) thin film forming equipment, and the above-mentioned means are used to transport and transport wafers into and out of the reactor and the reactor. Gas phase reactors, such as epitaxial equipment, diffusion furnaces, oxidation furnaces, ion implantation equipment, sputtering equipment, vapor deposition equipment, etc., are also recognized.
［発明の［１的コ
従って、本発明の１１的はウェハを反応炉内で取り扱う
ウェハ載置台、ウェハ突き上げピンおよびウェハフォー
クなどに異物類が付青しに《い気相反応装置を提供する
ことである。[Objective 1 of the Invention Accordingly, an eleventh object of the present invention is to provide a gas phase reaction apparatus which prevents foreign matter from forming on the wafer mounting table, wafer push-up pins, wafer forks, etc. for handling wafers in a reactor. That's true.
［問題点を解決するための千段コ
前記問題点を解決し、あわせて本発明の目的を達成する
ための手段として、この発明は、反応炉，該炉内に配設
されたウェハ突き上げ機構付きウェハ載置台および該ウ
ェハ載置台にウェハを搬送するためのウェハフォークを
有する気相反応装置において、少なくとも、前記ウェハ
載置台のウェハ載置而、ウェハ突き上げビンならびにウ
ェハフォークのウェハとの各接触面にポリシリコンの薄
膜が施されていることを特徴とする気相反応装置を提供
する。[Several Steps to Solve the Problems] As a means for solving the above-mentioned problems and also achieving the objects of the present invention, the present invention provides a reactor and a wafer thrusting mechanism disposed in the furnace. In a gas phase reaction apparatus having a wafer mounting table with a wafer mounting table and a wafer fork for transferring the wafer to the wafer mounting table, at least each contact between the wafer mounting table of the wafer mounting table, the wafer push-up bin, and the wafer fork with the wafer. To provide a gas phase reaction device characterized in that a thin film of polysilicon is applied to a surface.
［作用コ
前記のように、本発明の気相反応装置におけるウェハ載
置台、ウェハ突き１−げピンおよびウェハフォークのそ
れぞれウェハと接触する而にはポリシリコンの薄膜が施
されている。[Function] As described above, a polysilicon thin film is applied to each of the wafer mounting table, wafer pusher pin, and wafer fork in contact with the wafer in the gas phase reaction apparatus of the present invention.
本発明者らは反応炉内の異物対策を検討中に、偶然にも
ウェハと同様な素材をウェハ載置台等に使用すると異物
が付着しにくいことを発見した。The inventors of the present invention happened to discover that when a material similar to that of a wafer is used for a wafer mounting table or the like while considering countermeasures against foreign matter in a reactor, foreign matter is less likely to adhere.
史に、ウェハと同様な素材で製造したウェハ載置台の表
面を鏡而仕」−げすると異物が一層付着しにくくなるこ
とを発見した。Historically, researchers have discovered that if the surface of a wafer mounting table made of the same material as the wafer is treated with a mirror coating, it becomes even more difficult for foreign matter to adhere to it.
この発見に基づき、ウェハ載置台だけでなく、ウェハと
接触するｉｉＪ能性のある、ウェハ突き上げピンおよび
ウェハフォークにもウェハと同様な素材であるポリシリ
コンの薄膜を施したところ、異物が殆ど付着しなかった
。Based on this discovery, we applied a thin film of polysilicon, which is the same material as wafers, not only to the wafer mounting table but also to the wafer push-up pins and wafer fork, which have the ability to come into contact with the wafer. I didn't.
ウェハ載置台、ウェハ突き上げビンおよびウェハフォー
クに異物が付着しないので、これらにより取り扱われる
ウェハの裏面にも異物が付着しないこととなる。史に、
ウェハの裏面に異物が付青しないと、搬送中でもウェハ
の表（おちて）而に人物が付着することはない。Since foreign matter does not adhere to the wafer mounting table, wafer push-up bin, and wafer fork, no foreign matter adheres to the back surface of the wafer handled by these. In history,
If there is no foreign matter on the back side of the wafer, no person will be attached to the front side of the wafer during transportation.
かくして、ウェハに酸化物フレークが付着して成膜にピ
ンホールを発生させるような不都合な″−１［態が起こ
ることを減少させることができ、゛ｌ１導体素子の製造
歩留りを向一ヒさせることができるばかりか、゛！ヘ導
体シ造工程全体のスループットを向上させることができ
る。In this way, the occurrence of undesirable ``-1'' conditions such as oxide flakes adhering to the wafer and causing pinholes in the deposition can be reduced, improving the manufacturing yield of ``11'' conductor elements. Not only that, but also the throughput of the entire conductor fabrication process can be improved!
［実施例コ
以下、図面を参照しながら本発明の一実施例について更
に詳細に説明する。[Example 1] Hereinafter, an example of the present invention will be described in more detail with reference to the drawings.
第１図は本発明の気相反応装置で使用されるウェハｌ１
置台、ウェハ突きＬげピンおよびウェハフォークの一実
施例の部分！要図である。FIG. 1 shows a wafer l1 used in the gas phase reactor of the present invention.
Parts of an embodiment of the mounting stand, wafer pusher pin and wafer fork! This is the essential diagram.
第１図に示されるように、ステンレス製のウェハ載置台
４の上面にポリシリコンの薄膜２０ａを施す。同様に、
ステンレス製の突きトげピンの上端面にボリンリコンの
薄膜２０ｂを施し、更に、ステンレス製のウェハフォー
クのウェハＨ置而にポリシリコンの薄膜２０ｃを施す。As shown in FIG. 1, a polysilicon thin film 20a is applied to the upper surface of a stainless steel wafer mounting table 4. As shown in FIG. Similarly,
A thin film 20b of Borin Recon is applied to the upper end surface of the stainless steel push-up pin, and a thin film 20c of polysilicon is applied to the wafer H position of the stainless steel wafer fork.
ポリシリコン薄膜は前記のようにウェハと接触する部分
だけに施すこともできるが、ウェハ載置台，突き１−げ
ピンおよびウェハフォークの各部材の全表面積に施すこ
ともできる。異物の付着防止の観点からすれば、全表面
積にポリシリコン薄膜を施すことが好ましい。The polysilicon thin film can be applied only to the portions that come into contact with the wafer as described above, but it can also be applied to the entire surface area of each member of the wafer mounting table, push pins, and wafer fork. From the viewpoint of preventing adhesion of foreign matter, it is preferable to apply a polysilicon thin film to the entire surface area.
ポリシリコン薄膜は、例えば、シリコン蒸発源と部材を
真空チャンバー内に入れ、高真空中でシリコンを加熱し
て蒸発させることにより部材の表面に気相蒸着させるこ
とができる。これ以外の方法、例えば、電ｒ・ビーム蒸
着，スパッタ，またはＣＶＤなとの方法によっても薄膜
を彼着させることができる。A polysilicon thin film can be vapor-deposited on the surface of a member by, for example, placing a silicon evaporation source and the member in a vacuum chamber and heating and evaporating the silicon in a high vacuum. The thin film can also be deposited by other methods, such as electron beam evaporation, sputtering, or CVD.
ポリシリコン薄膜の厚みは数μｍから数十μｍ程度でよ
い。これ以上の厚みも使用できるが、経済的ではない。The thickness of the polysilicon thin film may be approximately several μm to several tens of μm. Although thicker layers can be used, they are not economical.
波着させたポリシリコン薄膜の表面を研磨し鏡面仕上げ
する。このような研磨による鏡而仕」―げの具体的処理
方法は当業者に周知である。The surface of the wave-applied polysilicon thin film is polished to a mirror finish. A specific method for treating such a mirror finish by polishing is well known to those skilled in the art.
［発明の効果］
以−ｌ一説明したように、本発明の気相反応装置におけ
るウェハ載置台、ウェハ突きｌ−げビンおよびウェハフ
ォークのそれぞれウェハと接触する面にはポリシリコン
の薄膜が施されている。[Effects of the Invention] As explained above, the surfaces of the wafer mounting table, wafer pusher bin, and wafer fork in contact with the wafer in the gas phase reaction apparatus of the present invention are coated with a polysilicon thin film. has been done.
本発明者らは反応炉内の異物対策を検討中に、偶然にも
ウェハと同様な素材をウェハ載置台等に使用すると異物
が付着しにくいことを発見した。The inventors of the present invention happened to discover that when a material similar to that of a wafer is used for a wafer mounting table or the like while considering countermeasures against foreign matter in a reactor, foreign matter is less likely to adhere.
川に、ウェハと同様な素材で製造したウェハ載置台の表
面を鏡而仕−ヒげすると兇物が一層付青しにくくなるこ
とを発見した。Finally, they discovered that if the surface of a wafer mounting table made of the same material as the wafer was polished, the surface of the wafer stand would be more difficult to stain.
この発見に基づき、ウェハ載置台だけでなく、ウェハと
接触する可能性のある、ウェハ突き上げビンおよびウェ
ハフォークにもウェハと同様な素材であるポリシリコン
の薄膜を施したところ、兇物が殆ど付着しなかった。Based on this discovery, we applied a thin film of polysilicon, which is the same material as wafers, not only to the wafer mounting table but also to the wafer push-up bin and wafer fork, which may come into contact with the wafers. I didn't.
ウェハｆｄｉ置台、ウェハ突き上げピンおよびウェハフ
ォークに異物が付着しないので、これらにより取り扱わ
れるウェハの裏面にも異物が付着しないこととなる。更
に、ウェハの裏面に異物が付着しないと、搬送中でもウ
ェハの表（おちて）面に異物が付着することはない。Since foreign matter does not adhere to the wafer fdi table, wafer push-up pins, and wafer fork, no foreign matter adheres to the back surface of the wafer handled by these. Furthermore, if foreign matter does not adhere to the back surface of the wafer, no foreign matter will adhere to the front (down) surface of the wafer even during transportation.
かくして、ウェハに酸化物フレークが付着して成膜にピ
ンホールを発生させるような不都合な事態が起こること
を減少させることができ、半導体素ｒ−の製造歩留りを
向」−させることができるばかりか、半導体製造工程全
体のスループットを向」−させることができる。In this way, it is possible to reduce the occurrence of inconvenient situations such as oxide flakes adhering to the wafer and causing pinholes in the film formation, and it is possible to improve the manufacturing yield of semiconductor elements. Alternatively, the throughput of the entire semiconductor manufacturing process can be improved.
４．図面の而弔な説明
第１図は本発明の気相反応装置で使用されるウェハ載置
台、ウェハ突き上げピンおよびウェハフォークの一実施
例の部分Ｗ１認図，第２図は従来のＣＶＤ薄膜形成装置
の断面４１！！５図，第３図は該装ｊ６におけるウェハ
取扱状態を示す部分概要図である。4. Particular explanation of the drawings: Figure 1 is a partial W1 diagram of an embodiment of the wafer mounting table, wafer push-up pins, and wafer fork used in the gas phase reaction apparatus of the present invention, and Figure 2 is a diagram showing conventional CVD thin film formation. Cross section of the device 41! ! 5 and 3 are partial schematic diagrams showing the wafer handling state in the apparatus j6.
Claims (3)
付きウェハ載置台および該ウェハ載置台にウェハを搬送
するためのウェハフォークを有する気相反応装置におい
て、少なくとも、前記ウェハ載置台のウェハ載置面、ウ
ェハ突き上げピンならびにウェハフォークのウェハとの
各接触面にポリシリコンの薄膜が施されていることを特
徴とする気相反応装置。(1) In a gas phase reaction apparatus having a reactor, a wafer mounting table with a wafer pushing mechanism disposed in the reactor, and a wafer fork for transporting a wafer to the wafer mounting table, at least A gas phase reaction apparatus characterized in that a polysilicon thin film is applied to the wafer mounting surface, the wafer push-up pins, and the contact surfaces of the wafer fork with the wafer.
フォークの各々のほぼ全面にポリシリコンの薄膜が施さ
れていることを特徴とする特許請求の範囲第１項に記載
の気相反応装置。(2) The gas phase reaction apparatus according to claim 1, wherein a polysilicon thin film is applied over substantially the entire surface of each of the wafer mounting table, wafer push-up pins, and wafer fork.
ことを特徴とする特許請求の範囲第１項または第２項に
記載の気相反応装置。(3) The gas phase reaction device according to claim 1 or 2, wherein the polysilicon thin film is mirror-finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14427186A JPS631440A (en) | 1986-06-20 | 1986-06-20 | Gaseous phase reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14427186A JPS631440A (en) | 1986-06-20 | 1986-06-20 | Gaseous phase reaction apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS631440A true JPS631440A (en) | 1988-01-06 |
Family
ID=15358207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14427186A Pending JPS631440A (en) | 1986-06-20 | 1986-06-20 | Gaseous phase reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS631440A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02281744A (en) * | 1989-04-24 | 1990-11-19 | Matsushita Electric Ind Co Ltd | Supporting device of semiconductor substrate |
| JPH0482100U (en) * | 1990-11-29 | 1992-07-16 | ||
| US5965981A (en) * | 1994-06-10 | 1999-10-12 | Nippondenso Co., Ltd | Transparent thin-film EL display apparatus |
-
1986
- 1986-06-20 JP JP14427186A patent/JPS631440A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02281744A (en) * | 1989-04-24 | 1990-11-19 | Matsushita Electric Ind Co Ltd | Supporting device of semiconductor substrate |
| JPH0482100U (en) * | 1990-11-29 | 1992-07-16 | ||
| US5965981A (en) * | 1994-06-10 | 1999-10-12 | Nippondenso Co., Ltd | Transparent thin-film EL display apparatus |
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