JPS63133644A - Wafer conveying fork - Google Patents
Wafer conveying forkInfo
- Publication number
- JPS63133644A JPS63133644A JP61281559A JP28155986A JPS63133644A JP S63133644 A JPS63133644 A JP S63133644A JP 61281559 A JP61281559 A JP 61281559A JP 28155986 A JP28155986 A JP 28155986A JP S63133644 A JPS63133644 A JP S63133644A
- Authority
- JP
- Japan
- Prior art keywords
- fork
- wafer
- conductive material
- metal
- grounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 4
- 239000010453 quartz Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 4
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 6
- 230000003068 static effect Effects 0.000 abstract description 6
- 239000000428 dust Substances 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 29
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はウェハ搬送フォークに関する。更に詳細には、
本発明は・端が接地され静電気の影響を受けないウェハ
搬送フォークに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wafer transfer fork. More specifically,
The present invention relates to a wafer transport fork whose end is grounded and is not affected by static electricity.
［従来の技術］
薄膜の形成方法として半導体・工業において一般に広く
用いられているものの一つに化学的気相成長法（ＣＶＤ
：Ｃｈｅｍｉｃａｌ Ｖａｌ）ｏｕｒＤｅｐｏｓ ｉ
ｔ １ｏｎ）がある。ＣＶＤとは、ガス状物質を化学
反応で固体物質にし、基板ｌ−に堆積することをいう。[Prior Art] Chemical vapor deposition (CVD) is one of the methods commonly used for forming thin films in semiconductor and industry.
:Chemical Val) our Depos i
t 1on). CVD refers to turning a gaseous substance into a solid substance through a chemical reaction and depositing it on a substrate l-.
ＣＶ Ｉ）の特徴は、成長しようとする薄膜の融点より
かなり低い堆積温度で種々の薄膜が得られること、およ
び、成長した薄膜の純度が高＜、ＳＩやＳｉ上の熱酸化
膜上に成長した場合も電気的特性が安定であることで、
広く半導体表面のパッジベージジン膜として利用されて
いる。The characteristics of CV I) are that various thin films can be obtained at a deposition temperature considerably lower than the melting point of the thin film to be grown, and that the purity of the grown thin films is high, and it is possible to grow on SI or a thermal oxide film on Si. The electrical characteristics are stable even when
It is widely used as a padding film on semiconductor surfaces.
ＣＶＤによる薄膜形成は、例えば５００℃程度に加熱し
たウェハに反応ガス（例えば、Ｓ ｓ Ｈ４＋０２．ま
たはＳ ｉＨｑ＋ＰＨＪ ＋０２ ）を供給して行われ
る。上記の反応ガスは反応炉内のウェハに吹きつけられ
、該ウェハの表面に５ｉ０２あるいはフォスフ−シリケ
ートガラス（ＰＳＧ）の薄膜を形成する。また、５ｉ０
２とＰＳＧとの２層成膜が行われることもある。史に、
モリブデン。Thin film formation by CVD is performed, for example, by supplying a reactive gas (for example, S s H4+02. or S iHq+PHJ +02) to a wafer heated to about 500°C. The above reaction gas is blown onto the wafer in the reactor to form a thin film of 5i02 or phospho-silicate glass (PSG) on the surface of the wafer. Also, 5i0
In some cases, two-layer film formation of 2 and PSG is performed. In history,
molybdenum.
タングステンあるいはタングステンシリサイド等の金属
薄膜の形成にも使用できる。It can also be used to form metal thin films such as tungsten or tungsten silicide.
［発明が解決しようとする問題点コ
従来の装置は反応炉の横に配設されたゲート部を介して
ウェハの搬入・搬出を行っていた。ウェハの搬入・搬出
にはウェハ搬送フォークが使用されてきた。[Problems to be Solved by the Invention] In the conventional apparatus, wafers were loaded and unloaded through a gate section provided on the side of the reactor. Wafer transport forks have been used for loading and unloading wafers.
従来のウェハ搬送フォークはセラミック類または石英専
の絶縁材で作られていた。このため、ウェハの搬送作業
の過程でフォークが帯電しやすかった。Conventional wafer transport forks are made of ceramic or quartz insulating materials. For this reason, the fork was easily charged with electricity during the process of carrying the wafer.
帯電したフォークをゲート部から反応炉内へ進入させた
場合、炉内に充滴していたｌ￥遊異物等の塵埃がフォー
クに引き寄せられる。また、炉外ヘフォークを退出させ
た場合にもクリーンルーム内の浮遊塵埃を引き寄せる。When a charged fork enters the reactor through the gate, the fork attracts foreign matter and other dust that has filled the reactor. Furthermore, even when the fork is moved out of the furnace, it attracts floating dust in the clean room.
かくして、フォーク上のウェハにも異物が多量に付２ｔ
する結果となる。In this way, a large amount of foreign matter was also attached to the wafer on the fork.
The result is
ウェハの表面に異物が付着すると蒸首膜にピンホールを
発生させ、゛１′導体素ｒの製造歩留りを著しく低下さ
せる。When foreign matter adheres to the surface of the wafer, pinholes are generated in the evaporation film, which significantly reduces the manufacturing yield of the ``1'' conductor element r.
［発明の目的コ
従って、本発明の目的は帯電することを防止した構造の
ウェハ搬送フォークを提供することである。[Object of the Invention] Accordingly, an object of the present invention is to provide a wafer transport fork having a structure that prevents charging.
［問題点を解決するための手段コ
前記の問題点を解決し、あわせて本発明の目的を達成す
るための手段として、この発明は、導電性の材料からな
り、一端が接地されたウェハ搬送フォークを提供する。[Means for Solving the Problems] As a means for solving the above-mentioned problems and also achieving the object of the present invention, the present invention provides a method for transporting wafers made of a conductive material and having one end grounded. Provide a fork.
［作用コ
前記のように本発明のウェハ搬送フォークは一端が接地
されており帯電することはない。[Operations] As described above, the wafer transport fork of the present invention has one end grounded and is not electrically charged.
従って、静電気で浮遊塵埃を引き寄せることは殆どなく
なる。かくして、ウェハに付着する異物量を大幅に低下
させることができ、半導体素子の製造歩留りを向」−さ
せることができる。Therefore, static electricity hardly attracts floating dust. In this way, the amount of foreign matter adhering to the wafer can be significantly reduced, and the manufacturing yield of semiconductor devices can be improved.
［実施例コ
以下、図面を参照しながら本発明の一実施例について更
に詳細に説明する。[Example 1] Hereinafter, an example of the present invention will be described in more detail with reference to the drawings.
第１図は本発明のウェハ搬送フォークの一例を示すＷｉ
髪図である。FIG. 1 shows an example of the wafer transport fork of the present invention.
This is a hair diagram.
第１図に示されるように、ウェハ搬送フォーク１０の先
端側のＬ面にウェハ２０が乗せられている。As shown in FIG. 1, a wafer 20 is placed on the L surface on the tip side of the wafer transport fork 10. As shown in FIG.
二点鎖線で、バされているのは常圧式ＣＶＤ装置の−ｆ
ｆ、であり、１００はベルジャ、１０２はゲート部、１
０４はサセプタ、１０６はバッファをそれぞれ示す。In the two-dot chain line, -f is the atmospheric pressure CVD equipment.
f, 100 is a bell jar, 102 is a gate part, 1
04 represents a susceptor, and 106 represents a buffer.
ウェハ搬送フォーク１０は導電性の材料から作られてい
る。導電性材料は例えば、金属である。The wafer transport fork 10 is made of electrically conductive material. The conductive material is, for example, metal.
金属としては例えば、銅、アルミニウム、ステンレス等
を使用できる。別法として、従来のセラミック類または
石英にアルミニウム、モリブデンシリサイドまたはタン
グステンシリサイド等の金属薄膜を施すことによっても
フォークを導電性にすることができる。金属薄膜の形成
はＣＶ Ｉ）またはＰＶＤにより実施できる。For example, copper, aluminum, stainless steel, etc. can be used as the metal. Alternatively, the fork can be made electrically conductive by applying a thin film of metal such as aluminum, molybdenum silicide or tungsten silicide to conventional ceramics or quartz. Formation of the metal thin film can be carried out by CVI) or PVD.
フォークの一端にアース端子１２を配設し、この端子に
、長さ調節の可能な導体ケーブル１４を接続し、ケーブ
ル１４の終端部を接地する。かくして、フｉ、−りｌＯ
はアースされたこととなる。A ground terminal 12 is provided at one end of the fork, a conductor cable 14 whose length can be adjusted is connected to this terminal, and the terminal end of the cable 14 is grounded. Thus, fi, -ri lO
is grounded.
フォークがウェハの搬入・搬出を行う際、ケーブル１４
の長さはその都度変化させなければならない。このため
、図示されていないが、例えば、ケーブル１４を繰り出
し・巻き仄し可能にするため可逆回転式リールに捲回し
て使用することが好ましい。When the fork carries in and out the wafer, the cable 14
The length must be changed each time. For this reason, although not shown in the drawings, for example, it is preferable to use the cable 14 by winding it on a reversible rotary reel so that it can be fed out and unwound.
ウェハ搬送フォーク１０は機械式またはエアーシリンダ
式等の当業者に周知の適当な進退機構に保持させること
ができる。The wafer transfer fork 10 can be held by a suitable advancing/retracting mechanism known to those skilled in the art, such as a mechanical type or an air cylinder type.
ウェハ搬送フォークの形状は図示されたものに限定され
ない。如何なる形状のフォークも本発明の帯電防止フォ
ークとして使用できる。The shape of the wafer transfer fork is not limited to that shown. Any shape of fork can be used as the antistatic fork of the present invention.
本発明のウェハ搬送フォークを常圧ＣＶＤ装置用として
説明してきたが、本発明のフォークは減圧およびプラズ
マ等の他のＣＶ Ｉ）装置についても当然使用できる。Although the wafer transfer fork of the present invention has been described for use in atmospheric pressure CVD equipment, the fork of the present invention can of course also be used in other CVD equipment such as reduced pressure and plasma.
また、搬入・搬出のためにウェハ搬送フォークを使用す
る全ての半導体製造装置、例えば、ドライエツチング装
置、エピタキシャル成長装置、ＰＶＤによる金属膜被着
装置、酸化・拡散装置６等においても使用でき、帯電防
止による異物の付着防止効果を得ることができる。It can also be used in all semiconductor manufacturing equipment that uses wafer transport forks for loading and unloading, such as dry etching equipment, epitaxial growth equipment, metal film deposition equipment by PVD, oxidation/diffusion equipment 6, etc., and can be used to prevent static electricity. It is possible to obtain the effect of preventing the adhesion of foreign matter.
［発明の効果］
以、［−説明したように、本発明のウェハ搬送フォーク
は導電性材料からなり、一端が接地されているので帯電
することはない。[Effects of the Invention] As described above, the wafer transport fork of the present invention is made of a conductive material and one end is grounded, so it will not be charged.
従って、静電気で浮遊塵埃を引き寄せることは殆どなく
なる。かくして、ウェハに付着する異物量を大幅に低下
させることができ、）ト導体素子の製造歩留りを向上さ
せることができる。Therefore, static electricity hardly attracts floating dust. In this way, the amount of foreign matter adhering to the wafer can be significantly reduced, and the manufacturing yield of conductor elements can be improved.
第１図は本発明のウェハ搬送フォークの一例を示す概要
図である。
１０・・・ウェハ搬送フォーク、１２・・・アース端子
。FIG. 1 is a schematic diagram showing an example of a wafer transfer fork of the present invention. 10... Wafer transfer fork, 12... Earth terminal.
Claims (3)
搬送フォーク。(1) Wafer transport fork made of conductive material and grounded at one end.
に記載のウェハ搬送フォーク。(2) The wafer transfer fork according to claim 1, wherein the conductive material is metal.
ンシリサイドまたはタングステンシリサイドから選択さ
れる導電性の薄膜を施し、該導電性薄膜の一端からアー
スを取った特許請求の範囲第１項に記載のウェハ搬送フ
ォーク。(3) A conductive thin film selected from metal, molybun silicide, or tungsten silicide is applied to the surface of ceramics or quartz, and one end of the conductive thin film is grounded. Wafer transport fork.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281559A JPS63133644A (en) | 1986-11-26 | 1986-11-26 | Wafer conveying fork |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281559A JPS63133644A (en) | 1986-11-26 | 1986-11-26 | Wafer conveying fork |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63133644A true JPS63133644A (en) | 1988-06-06 |
Family
ID=17640872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61281559A Pending JPS63133644A (en) | 1986-11-26 | 1986-11-26 | Wafer conveying fork |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133644A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237744A (en) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | Transfer |
| JPH043426A (en) * | 1990-04-19 | 1992-01-08 | Nec Yamagata Ltd | Manufacturing apparatus of semiconductor device |
| JPH04343446A (en) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | Wafer conveying holder for semiconductor manufacturing apparatus |
| JPH04372385A (en) * | 1991-06-20 | 1992-12-25 | Tooyoko Chikiyuu Kankyo Kenkyusho:Kk | Wafer carrier robot |
| JPH07147311A (en) * | 1993-11-24 | 1995-06-06 | Tokyo Electron Ltd | Transfer arm |
| WO2003049157A1 (en) * | 2001-12-03 | 2003-06-12 | E. I. Du Pont De Nemours And Company | Transfer member with electric conductivity and its manufacturing method |
| JP2006216710A (en) * | 2005-02-02 | 2006-08-17 | Hitachi High-Technologies Corp | Semiconductor manufacturing equipment |
| US7490878B1 (en) * | 2003-12-29 | 2009-02-17 | Storage Technology Corporation | ESD safe vacuum wand tip |
| JP2011171591A (en) * | 2010-02-19 | 2011-09-01 | Disco Corp | Apparatus for carry in/carry out of wafer |
| WO2014018339A1 (en) * | 2012-07-22 | 2014-01-30 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic charge removal for solar cell grippers |
| WO2018131600A1 (en) * | 2017-01-10 | 2018-07-19 | 京セラ株式会社 | Mounting member for heat treatment |
-
1986
- 1986-11-26 JP JP61281559A patent/JPS63133644A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237744A (en) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | Transfer |
| JPH043426A (en) * | 1990-04-19 | 1992-01-08 | Nec Yamagata Ltd | Manufacturing apparatus of semiconductor device |
| JPH04343446A (en) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | Wafer conveying holder for semiconductor manufacturing apparatus |
| JPH04372385A (en) * | 1991-06-20 | 1992-12-25 | Tooyoko Chikiyuu Kankyo Kenkyusho:Kk | Wafer carrier robot |
| JPH07147311A (en) * | 1993-11-24 | 1995-06-06 | Tokyo Electron Ltd | Transfer arm |
| WO2003049157A1 (en) * | 2001-12-03 | 2003-06-12 | E. I. Du Pont De Nemours And Company | Transfer member with electric conductivity and its manufacturing method |
| CN1332419C (en) * | 2001-12-03 | 2007-08-15 | 纳幕尔杜邦公司 | Transfer member with electric conductivity and its manufacturing method |
| US7490878B1 (en) * | 2003-12-29 | 2009-02-17 | Storage Technology Corporation | ESD safe vacuum wand tip |
| JP2006216710A (en) * | 2005-02-02 | 2006-08-17 | Hitachi High-Technologies Corp | Semiconductor manufacturing equipment |
| JP2011171591A (en) * | 2010-02-19 | 2011-09-01 | Disco Corp | Apparatus for carry in/carry out of wafer |
| WO2014018339A1 (en) * | 2012-07-22 | 2014-01-30 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic charge removal for solar cell grippers |
| US9064920B2 (en) | 2012-07-22 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic charge removal for solar cell grippers |
| WO2018131600A1 (en) * | 2017-01-10 | 2018-07-19 | 京セラ株式会社 | Mounting member for heat treatment |
| JPWO2018131600A1 (en) * | 2017-01-10 | 2019-11-07 | 京セラ株式会社 | Mounting member for heat treatment |
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