JPS63143559A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS63143559A JPS63143559A JP29121586A JP29121586A JPS63143559A JP S63143559 A JPS63143559 A JP S63143559A JP 29121586 A JP29121586 A JP 29121586A JP 29121586 A JP29121586 A JP 29121586A JP S63143559 A JPS63143559 A JP S63143559A
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- layer
- diamond
- providing
- carbon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 4
- 108091008695 photoreceptors Proteins 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 229910003460 diamond Inorganic materials 0.000 abstract description 3
- 239000010432 diamond Substances 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract 2
- 125000004429 atom Chemical group 0.000 abstract 1
- 150000001721 carbon Chemical group 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08285—Carbon-based
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/147—Cover layers
- G03G5/14704—Cover layers comprising inorganic material
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子複写機、レーザープリンター、LEDプリ
ンター等に使用される電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrophotographic photoreceptor used in electronic copying machines, laser printers, LED printers, and the like.
電子写真技術は、帯電させた感光体の表面に文字や画像
情報を露光して静電画像を生成し、これを現像して可視
像化した後に用紙に転写するものであり、電子複写機を
はじめ各種のプリンターに応用されている。Electrophotographic technology involves exposing characters and image information to the surface of a charged photoreceptor to generate an electrostatic image, which is then developed and visualized before being transferred to paper. It is applied to various printers including.
これに使用される感光体としては、従来がらセレン等各
種の光導電性材料が用いられてきたが、最近では電気的
特性及び機械的強度に侵れたアモルファスシリコンが広
く使用されつつある。Various photoconductive materials such as selenium have traditionally been used as photoreceptors for this purpose, but recently amorphous silicon, which has improved electrical properties and mechanical strength, has been widely used.
かかる感光体には長期間安定した画像が得られることが
要求されるが、アモルファスシリコンは硬度及び強度が
高いとはいうものの損傷したり摩耗したりすることがあ
り、また帯電過程でのコロナ放電に繰返しさらされるこ
とにより変質1.やすく、このためアモルファスシリコ
ン感光層の光感度、受容電位、暗減衰、残留電位などの
電気的特性が劣化し、印字品位が低下して寿命が短い欠
点があった。Such photoreceptors are required to produce stable images over a long period of time, but although amorphous silicon has high hardness and strength, it can be damaged or worn out, and it also suffers from corona discharge during the charging process. Deterioration due to repeated exposure to 1. As a result, electrical properties such as photosensitivity, acceptance potential, dark decay, and residual potential of the amorphous silicon photosensitive layer deteriorate, resulting in lower printing quality and short service life.
この欠点を解決する手段として、例えば特開昭57−1
14146号公報には、アモルファスシリコン感光層の
表面を炭素よりなるダイヤモンド状の保護膜で覆うこと
が開示されている。As a means to solve this drawback, for example, Japanese Patent Laid-Open No. 57-1
Japanese Patent No. 14146 discloses that the surface of an amorphous silicon photosensitive layer is covered with a diamond-shaped protective film made of carbon.
しかし、ダイヤモンド状保護膜によりアモルファスシリ
コン感光層の損傷や摩耗は減少し、耐コロナ放電性も改
善されるが、依然として電気的特注が劣化しやす(、更
にダイヤモンド状保護膜が剥離しやすい等の欠点があり
、感光体として十分な信頼性を得るに至っていない。そ
の原因は必ずしも明白ではないが、アモルファスシリコ
ンの感光層とダイヤモンド状炭素の保護膜との組成の違
いによる歪が両者の密着性に悪影響を与え、またこの歪
が両者の界面に欠陥準位を数多く作り出しているためと
考えられる。However, although the diamond-like protective film reduces damage and abrasion of the amorphous silicon photosensitive layer and improves corona discharge resistance, it still tends to cause electrical customization to deteriorate (in addition, the diamond-like protective film easily peels off, etc.). There are some drawbacks, and it has not achieved sufficient reliability as a photoreceptor.The reason for this is not necessarily clear, but the strain caused by the difference in composition between the amorphous silicon photosensitive layer and the diamond-like carbon protective film has caused problems in the adhesion between the two. It is thought that this is because this strain has an adverse effect on the strain, and this strain creates many defect levels at the interface between the two.
本発明は、かかる従来の事情に鑑み、アモルファスシリ
コン感光層を具え、長期間安定して使用できる信頼性の
優れた電子写真感光体を提供することを目的とする。SUMMARY OF THE INVENTION In view of the conventional circumstances, it is an object of the present invention to provide an electrophotographic photoreceptor that is provided with an amorphous silicon photosensitive layer and that can be stably used for a long period of time and has excellent reliability.
本発明の電子写真感光体は、導電性基体上に形成したア
モルファスシリコンの感光層と、該感光層上に形成した
ケイ素原子と炭素原子及び/又は窒素原子とからなるア
モルファスの中間層と、該中間層上に形成したダイヤモ
ンド状炭素膜とを有することを特徴とする。The electrophotographic photoreceptor of the present invention comprises: an amorphous silicon photosensitive layer formed on a conductive substrate; an amorphous intermediate layer formed on the photosensitive layer formed of silicon atoms and carbon atoms and/or nitrogen atoms; It is characterized by having a diamond-like carbon film formed on the intermediate layer.
導電性基体は、At+Cr 、Ni 、Mo 、Nb
、Ta及びステンレス等の従来から使用されている金属
又は合金であってよく、その形状や厚さは使用目的によ
り適宜選択される。また、ポリエステル、ポリエチレン
、ポリカーデネイト、ポリ塩化ビニル等の電気絶縁性高
分子物質、若しくはガラス、セラミックス、紙等の絶縁
性支持体の表面に導電層を形成したものを導電性基体と
することもできる。この場合、導電層は上記導電性基体
と同様の金属又は合金、ないしはIn2O5や5n02
等の薄膜であり、真空蒸着、スパッタリング、イオンブ
レーティング、ラミネーテイング等の通常の方法で形成
する。The conductive substrate is At+Cr, Ni, Mo, Nb
The material may be a conventionally used metal or alloy such as Ta, stainless steel, etc., and its shape and thickness are appropriately selected depending on the purpose of use. In addition, the conductive substrate may be an electrically insulating polymer material such as polyester, polyethylene, polycarbonate, or polyvinyl chloride, or an insulating support such as glass, ceramics, or paper with a conductive layer formed on the surface. You can also do it. In this case, the conductive layer is made of the same metal or alloy as the conductive substrate, or In2O5 or 5n02.
It is a thin film such as, and is formed by a conventional method such as vacuum evaporation, sputtering, ion blasting, or lamination.
アモルファスシリコン(a−8i)の感光層は本質的に
アモルファスシリコンからなるものであればよく、製造
方法により水素及び/またはフッ素が含まれても、更に
電気的又は光学的特性を変えるためにゲルマニウム又は
ホウ素等をドーグしていてもよい。更に、アモルファス
シリコン感光層と導電性基体との間に、キャリヤ注入防
止層として窒素や炭素を含むアモルファスシリコンの層
を設けることが好ましい。かかるアモルファスシリコン
はa−8iNH又はa−8iCHで表わされ、窒素又は
炭素原子の添加量k”10.7≦(C又&tN)/St
≦1.5となる範囲が好ましい。The photosensitive layer of amorphous silicon (a-8i) may be essentially made of amorphous silicon, and even if it contains hydrogen and/or fluorine due to the manufacturing method, germanium may be added to change the electrical or optical properties. Alternatively, boron or the like may be added. Furthermore, it is preferable to provide an amorphous silicon layer containing nitrogen or carbon as a carrier injection prevention layer between the amorphous silicon photosensitive layer and the conductive substrate. Such amorphous silicon is represented by a-8iNH or a-8iCH, and the added amount of nitrogen or carbon atoms k"10.7≦(C or &tN)/St
A range of ≦1.5 is preferable.
中間層はケイ素原子と炭素原子及び/又は窒素原子とか
らなるアモルファスの層であり、アモルファスシリコン
感光層とダイヤモンド状炭素膜との中間的な組成及び性
質を具えている。かがる中間層の光学的パンドギャッf
(Eg)は2.0〜3.0eVであることが好ましく
、また膜厚は0.03〜0.5μmであることが好まし
い。The intermediate layer is an amorphous layer composed of silicon atoms and carbon atoms and/or nitrogen atoms, and has a composition and properties intermediate between an amorphous silicon photosensitive layer and a diamond-like carbon film. Optical breadth gap of the interlayer that bends
(Eg) is preferably 2.0 to 3.0 eV, and the film thickness is preferably 0.03 to 0.5 μm.
これらのアモルファスシリコン感光層、キャリヤ注入防
止層及び中間層は、プラズマCVD法。These amorphous silicon photosensitive layer, carrier injection prevention layer and intermediate layer are formed using plasma CVD method.
光cVD法、スi?ツタリング法、イオンプレーテイン
ク法など常法に従って形成できる。Optical CVD method, Sui? It can be formed according to conventional methods such as the tuttering method and the ion plate ink method.
更に、ダイヤモンド状炭素膜は別名i・カーがンとも呼
ばれ、その電気的2機械的、光学的及び化学的性質が通
常の炭素膜とは異なりダイヤモンドに近いものである。Furthermore, the diamond-like carbon film is also called i-carbon film, and its electrical, mechanical, optical, and chemical properties are different from ordinary carbon films and are close to diamond.
即ち、固有抵抗が1080儂以上、光学的バンドギャッ
プが2 eV以上、及びビッカース硬度が1500以上
である。かかるダイヤモンド状炭素膜は、プラズマCV
D法、スノにツタリンク法、イオンビームデポジション
法、レーザー蒸着法により形成できる。That is, the resistivity is 1080 degrees or more, the optical band gap is 2 eV or more, and the Vickers hardness is 1500 or more. Such a diamond-like carbon film can be formed by plasma CV
It can be formed by the D method, the Suno-ni-Tuta-link method, the ion beam deposition method, or the laser evaporation method.
〔作 用〕
本発明の感光体においては、アモルファスシリコン感光
層とダイヤモンド状炭素膜との間に、これら両層の中間
的な組成及び性質を有する中間層が介在しているので、
従来隣接していたアモルファスシリコン感光層とダイヤ
モンド状炭素膜の間の歪を吸収し、これらの各層間の界
面欠陥準位が少なくなる。その結果、帯電及び露光工程
において生じるキャリヤーが界面欠陥準位でトラップさ
れることがなくなり、長期間使用しても光感度、受容電
位、暗減衰、残留電位などの電気的特性が劣化すること
がない。この作用は感光体の単位膜厚当りの受容電位(
受容電位/導電性基体表面から感光層までの厚さ)が正
帯電40v/μm以上であるとき特に顕著である。[Function] In the photoreceptor of the present invention, an intermediate layer having a composition and properties intermediate between these two layers is interposed between the amorphous silicon photosensitive layer and the diamond-like carbon film.
The strain between the conventionally adjacent amorphous silicon photosensitive layer and diamond-like carbon film is absorbed, and the interface defect levels between these layers are reduced. As a result, carriers generated during the charging and exposure processes are no longer trapped in interfacial defect levels, and electrical properties such as photosensitivity, acceptance potential, dark decay, and residual potential do not deteriorate even after long-term use. do not have. This action is due to the acceptance potential per unit film thickness of the photoreceptor (
This is particularly noticeable when the acceptance potential/thickness from the surface of the conductive substrate to the photosensitive layer is positively charged at 40 V/μm or more.
かかる作用を果たす中間層の光学的パンドギャツf (
Eg)は2.0〜3.Oe Vが好ましく、2.0eV
未満では長波長光の吸収が多くなるため感度が低下し、
3.0eVを超えると歪を十分に吸収することが困難に
なるからである。また、中間層の膜厚は0.03〜0.
5μmであることが好ましく、膜厚か0.03μm未満
では歪の吸・収が十分ではなく、0.5μmを超えると
残留電位が大きくなり不都合である。The optical breadth f (
Eg) is 2.0-3. Oe V is preferred, 2.0eV
If the value is less than
This is because if it exceeds 3.0 eV, it becomes difficult to absorb strain sufficiently. Moreover, the film thickness of the intermediate layer is 0.03 to 0.0.
The thickness is preferably 5 μm; if the film thickness is less than 0.03 μm, strain absorption will not be sufficient, and if it exceeds 0.5 μm, the residual potential will become large, which is disadvantageous.
また、最外層であるダイヤモンド状炭素膜は保護層であ
るから、0.05〜1.0μmの膜厚があれば十分であ
り、0.05μm未満では機械的強度が十分ではな(,
1,0μmを超えると入射光の吸収が大きくなり感度の
低下を招(。In addition, since the outermost diamond-like carbon film is a protective layer, a film thickness of 0.05 to 1.0 μm is sufficient; if it is less than 0.05 μm, the mechanical strength may not be sufficient (,
If it exceeds 1.0 μm, the absorption of incident light increases, resulting in a decrease in sensitivity ().
本発明の電子写真感光体の一具体例を以下に説明する。 A specific example of the electrophotographic photoreceptor of the present invention will be described below.
図面に示す構成の感光体を、アルミニウムの導電性基体
1上に各層をプラズマCVD法により連続的に形成して
製造した。即ち、キャリヤ注入防止層2としてSiH4
(100secm)とNH3(200secm )を圧
力Q、2Torr及びRF電力100Wでグロー放電分
解するプラズマCVD法により膜厚0.15μmのa−
8iNHを形成し、その上にSiH4(150secm
)を圧力Q、15Torr及びRF電力200Wでグロ
ー放電分解スるプラズマCVD法により膜厚15μmの
a −8i悪感光3を形成した。更に、a−8t悪感光
3上にSiH4(100scem)とC2H4(100
secm )を圧力0.2Torr及びRF電力100
Wでグロー放電分解するプラズマCVD法により膜厚0
.2μmで光学的バンドギャップが2.5eVのa−8
i−C中間層4を形成した。最後に、ダイヤモンド状炭
素膜5をCH4(20secm)を圧力0.I Tor
r及びRF’電力500Wでグロー放電分解するプラズ
マCVD法により膜厚0.2μmに形成した。尚、各層
の形成において、基板温度は220℃とし、RF周波数
は13.56 MHzとした。A photoreceptor having the structure shown in the drawings was manufactured by sequentially forming each layer on an aluminum conductive substrate 1 by plasma CVD. That is, SiH4 is used as the carrier injection prevention layer 2.
A-
8iNH was formed, and SiH4 (150sec
) was subjected to glow discharge decomposition at a pressure Q of 15 Torr and an RF power of 200 W to form an a-8i photosensitive film 3 having a film thickness of 15 μm. Furthermore, SiH4 (100 scem) and C2H4 (100 scem) were
secm) at a pressure of 0.2 Torr and an RF power of 100
The film thickness is 0 by the plasma CVD method using glow discharge decomposition with W.
.. a-8 with an optical bandgap of 2.5 eV at 2 μm
An i-C intermediate layer 4 was formed. Finally, the diamond-like carbon film 5 was coated with CH4 (20 sec) at a pressure of 0. I Tor
The film was formed to a thickness of 0.2 μm using a plasma CVD method in which glow discharge decomposition was performed using r and RF' power of 500 W. In the formation of each layer, the substrate temperature was 220° C. and the RF frequency was 13.56 MHz.
得られた本発明の感光体と、中間層4を有しない従来の
感光体を用いて、複写耐久試験を実施した結果、従来の
感光体は50万回の複写で画像のコントラストが悪化し
鮮明度も低下したが、本発明の感光体では100万回の
複写の後でも鮮明な画像が得られ、まだ複写が可能であ
った。A copying durability test was conducted using the obtained photoconductor of the present invention and a conventional photoconductor that does not have the intermediate layer 4. As a result, the contrast of the conventional photoconductor deteriorated and the image became clear after 500,000 copies. Although the photoreceptor of the present invention still produced clear images even after 1 million copies, copying was still possible.
本発明によれば、アモルファスシリコン感光層とダイヤ
モンド状炭素膜との間に、これら両層の中間的な組成及
び性質を有する中間層を介在させることによって両層間
の歪を吸収して界面欠陥準位を少な(することができ、
帯電及び露光工程において生じるキャリヤーか界面欠陥
準位でトラップされることがな(なるので、電気的特性
が劣化せず、長期間安定して使用できる信頼性の優れた
電子写真感光体を提供することができる。According to the present invention, an intermediate layer having a composition and properties intermediate between these two layers is interposed between the amorphous silicon photosensitive layer and the diamond-like carbon film, thereby absorbing strain between the two layers and reducing interface defects. (can be,
Carriers generated during the charging and exposure processes are not trapped in interfacial defect levels (therefore, the electrical characteristics do not deteriorate and an excellently reliable electrophotographic photoreceptor that can be used stably for a long period of time is provided. be able to.
図面は本発明の電子写真感光体の一具体例の概略断面図
である。
1・・・導電性基体 2・・・キャリヤ注入防止層3・
・・感光層 4・・・中間層 5・・・ダイヤモンド状
炭素膜The drawing is a schematic cross-sectional view of a specific example of the electrophotographic photoreceptor of the present invention. 1... Conductive substrate 2... Carrier injection prevention layer 3.
...Photosensitive layer 4...Intermediate layer 5...Diamond-like carbon film
Claims (3)
感光層と、該感光層上に形成したケイ素原子と炭素原子
及び/又は窒素原子とからなるアモルファスの中間層と
、該中間層上に形成したダイヤモンド状炭素膜とを有す
ることを特徴とする電子写真感光体。(1) A photosensitive layer of amorphous silicon formed on a conductive substrate, an amorphous intermediate layer formed on the photosensitive layer consisting of silicon atoms and carbon atoms and/or nitrogen atoms, and an amorphous intermediate layer formed on the intermediate layer. An electrophotographic photoreceptor comprising a diamond-like carbon film.
.0〜3.0eVであることを特徴とする、特許請求の
範囲(1)項に記載の電子写真感光体。(2) The optical bandgap (Eg) of the intermediate layer is 2
.. The electrophotographic photoreceptor according to claim (1), which has a voltage of 0 to 3.0 eV.
ことを特徴とする、特許請求の範囲(1)項又は(2)
項に記載の電子写真感光体。(3) Claim (1) or (2) characterized in that the thickness of the intermediate layer is 0.03 to 0.5 μm.
The electrophotographic photoreceptor described in .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29121586A JPS63143559A (en) | 1986-12-05 | 1986-12-05 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29121586A JPS63143559A (en) | 1986-12-05 | 1986-12-05 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63143559A true JPS63143559A (en) | 1988-06-15 |
Family
ID=17765955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29121586A Pending JPS63143559A (en) | 1986-12-05 | 1986-12-05 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63143559A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010049242A (en) * | 2008-07-25 | 2010-03-04 | Canon Inc | Electrophotographic photoreceptor and electrophotographic equipment |
-
1986
- 1986-12-05 JP JP29121586A patent/JPS63143559A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010049242A (en) * | 2008-07-25 | 2010-03-04 | Canon Inc | Electrophotographic photoreceptor and electrophotographic equipment |
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