JPS63143559A - Electrophotographic sensitive body - Google Patents

Electrophotographic sensitive body

Info

Publication number
JPS63143559A
JPS63143559A JP29121586A JP29121586A JPS63143559A JP S63143559 A JPS63143559 A JP S63143559A JP 29121586 A JP29121586 A JP 29121586A JP 29121586 A JP29121586 A JP 29121586A JP S63143559 A JPS63143559 A JP S63143559A
Authority
JP
Japan
Prior art keywords
intermediate layer
layer
diamond
providing
carbon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29121586A
Other languages
Japanese (ja)
Inventor
Saburo Tanaka
三郎 田中
Nobuhiko Fujita
藤田 順彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP29121586A priority Critical patent/JPS63143559A/en
Publication of JPS63143559A publication Critical patent/JPS63143559A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08285Carbon-based
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14Inert intermediate or cover layers for charge-receiving layers
    • G03G5/147Cover layers
    • G03G5/14704Cover layers comprising inorganic material

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain the excellent reliability of the titled body which can be used for long period, without generating the deterioration of electric characteristics by providing a specific a-Si type intermediate layer on a a-Si photosensitive layer formed on a substrate body, followed by providing a diamond like carbon film on the intermediate layer. CONSTITUTION:The titled body is formed by providing the intermediate layer 4 of the amorphous (a-SiCH or a-SiNH) composed of Si atom and carbon atom and/or nitrogen atom on the a-Si photosensitive layer 3 formed on the conductive substrate 1, followed by providing the diamond like carbon film 5 on said intermediate layer 4. And, the intermediate layer 4 has optical band gap of 2.0-3.0 eV, and preferably the film thickness of 0.03-0.5mum. The interfacial defective level between the layers 3 and 5 is lessened by interposing the intermediate layer 4 between the a-Si sensitive layer 3 and the carbon film 5. Therefore, the deterioration of the electric characteristics of the titled body such as sensitivity, receptive voltage, dark attenuation and and residual voltage, etc. does not occur in case of using it for long period, thereby improving the reliability of the titled body, without trapping the carrier caused by charging and exposing steps at the interfacial defective level.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子複写機、レーザープリンター、LEDプリ
ンター等に使用される電子写真感光体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrophotographic photoreceptor used in electronic copying machines, laser printers, LED printers, and the like.

〔従来の技術〕[Conventional technology]

電子写真技術は、帯電させた感光体の表面に文字や画像
情報を露光して静電画像を生成し、これを現像して可視
像化した後に用紙に転写するものであり、電子複写機を
はじめ各種のプリンターに応用されている。
Electrophotographic technology involves exposing characters and image information to the surface of a charged photoreceptor to generate an electrostatic image, which is then developed and visualized before being transferred to paper. It is applied to various printers including.

これに使用される感光体としては、従来がらセレン等各
種の光導電性材料が用いられてきたが、最近では電気的
特性及び機械的強度に侵れたアモルファスシリコンが広
く使用されつつある。
Various photoconductive materials such as selenium have traditionally been used as photoreceptors for this purpose, but recently amorphous silicon, which has improved electrical properties and mechanical strength, has been widely used.

かかる感光体には長期間安定した画像が得られることが
要求されるが、アモルファスシリコンは硬度及び強度が
高いとはいうものの損傷したり摩耗したりすることがあ
り、また帯電過程でのコロナ放電に繰返しさらされるこ
とにより変質1.やすく、このためアモルファスシリコ
ン感光層の光感度、受容電位、暗減衰、残留電位などの
電気的特性が劣化し、印字品位が低下して寿命が短い欠
点があった。
Such photoreceptors are required to produce stable images over a long period of time, but although amorphous silicon has high hardness and strength, it can be damaged or worn out, and it also suffers from corona discharge during the charging process. Deterioration due to repeated exposure to 1. As a result, electrical properties such as photosensitivity, acceptance potential, dark decay, and residual potential of the amorphous silicon photosensitive layer deteriorate, resulting in lower printing quality and short service life.

この欠点を解決する手段として、例えば特開昭57−1
14146号公報には、アモルファスシリコン感光層の
表面を炭素よりなるダイヤモンド状の保護膜で覆うこと
が開示されている。
As a means to solve this drawback, for example, Japanese Patent Laid-Open No. 57-1
Japanese Patent No. 14146 discloses that the surface of an amorphous silicon photosensitive layer is covered with a diamond-shaped protective film made of carbon.

しかし、ダイヤモンド状保護膜によりアモルファスシリ
コン感光層の損傷や摩耗は減少し、耐コロナ放電性も改
善されるが、依然として電気的特注が劣化しやす(、更
にダイヤモンド状保護膜が剥離しやすい等の欠点があり
、感光体として十分な信頼性を得るに至っていない。そ
の原因は必ずしも明白ではないが、アモルファスシリコ
ンの感光層とダイヤモンド状炭素の保護膜との組成の違
いによる歪が両者の密着性に悪影響を与え、またこの歪
が両者の界面に欠陥準位を数多く作り出しているためと
考えられる。
However, although the diamond-like protective film reduces damage and abrasion of the amorphous silicon photosensitive layer and improves corona discharge resistance, it still tends to cause electrical customization to deteriorate (in addition, the diamond-like protective film easily peels off, etc.). There are some drawbacks, and it has not achieved sufficient reliability as a photoreceptor.The reason for this is not necessarily clear, but the strain caused by the difference in composition between the amorphous silicon photosensitive layer and the diamond-like carbon protective film has caused problems in the adhesion between the two. It is thought that this is because this strain has an adverse effect on the strain, and this strain creates many defect levels at the interface between the two.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

本発明は、かかる従来の事情に鑑み、アモルファスシリ
コン感光層を具え、長期間安定して使用できる信頼性の
優れた電子写真感光体を提供することを目的とする。
SUMMARY OF THE INVENTION In view of the conventional circumstances, it is an object of the present invention to provide an electrophotographic photoreceptor that is provided with an amorphous silicon photosensitive layer and that can be stably used for a long period of time and has excellent reliability.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の電子写真感光体は、導電性基体上に形成したア
モルファスシリコンの感光層と、該感光層上に形成した
ケイ素原子と炭素原子及び/又は窒素原子とからなるア
モルファスの中間層と、該中間層上に形成したダイヤモ
ンド状炭素膜とを有することを特徴とする。
The electrophotographic photoreceptor of the present invention comprises: an amorphous silicon photosensitive layer formed on a conductive substrate; an amorphous intermediate layer formed on the photosensitive layer formed of silicon atoms and carbon atoms and/or nitrogen atoms; It is characterized by having a diamond-like carbon film formed on the intermediate layer.

導電性基体は、At+Cr 、Ni 、Mo 、Nb 
、Ta及びステンレス等の従来から使用されている金属
又は合金であってよく、その形状や厚さは使用目的によ
り適宜選択される。また、ポリエステル、ポリエチレン
、ポリカーデネイト、ポリ塩化ビニル等の電気絶縁性高
分子物質、若しくはガラス、セラミックス、紙等の絶縁
性支持体の表面に導電層を形成したものを導電性基体と
することもできる。この場合、導電層は上記導電性基体
と同様の金属又は合金、ないしはIn2O5や5n02
等の薄膜であり、真空蒸着、スパッタリング、イオンブ
レーティング、ラミネーテイング等の通常の方法で形成
する。
The conductive substrate is At+Cr, Ni, Mo, Nb
The material may be a conventionally used metal or alloy such as Ta, stainless steel, etc., and its shape and thickness are appropriately selected depending on the purpose of use. In addition, the conductive substrate may be an electrically insulating polymer material such as polyester, polyethylene, polycarbonate, or polyvinyl chloride, or an insulating support such as glass, ceramics, or paper with a conductive layer formed on the surface. You can also do it. In this case, the conductive layer is made of the same metal or alloy as the conductive substrate, or In2O5 or 5n02.
It is a thin film such as, and is formed by a conventional method such as vacuum evaporation, sputtering, ion blasting, or lamination.

アモルファスシリコン(a−8i)の感光層は本質的に
アモルファスシリコンからなるものであればよく、製造
方法により水素及び/またはフッ素が含まれても、更に
電気的又は光学的特性を変えるためにゲルマニウム又は
ホウ素等をドーグしていてもよい。更に、アモルファス
シリコン感光層と導電性基体との間に、キャリヤ注入防
止層として窒素や炭素を含むアモルファスシリコンの層
を設けることが好ましい。かかるアモルファスシリコン
はa−8iNH又はa−8iCHで表わされ、窒素又は
炭素原子の添加量k”10.7≦(C又&tN)/St
≦1.5となる範囲が好ましい。
The photosensitive layer of amorphous silicon (a-8i) may be essentially made of amorphous silicon, and even if it contains hydrogen and/or fluorine due to the manufacturing method, germanium may be added to change the electrical or optical properties. Alternatively, boron or the like may be added. Furthermore, it is preferable to provide an amorphous silicon layer containing nitrogen or carbon as a carrier injection prevention layer between the amorphous silicon photosensitive layer and the conductive substrate. Such amorphous silicon is represented by a-8iNH or a-8iCH, and the added amount of nitrogen or carbon atoms k"10.7≦(C or &tN)/St
A range of ≦1.5 is preferable.

中間層はケイ素原子と炭素原子及び/又は窒素原子とか
らなるアモルファスの層であり、アモルファスシリコン
感光層とダイヤモンド状炭素膜との中間的な組成及び性
質を具えている。かがる中間層の光学的パンドギャッf
 (Eg)は2.0〜3.0eVであることが好ましく
、また膜厚は0.03〜0.5μmであることが好まし
い。
The intermediate layer is an amorphous layer composed of silicon atoms and carbon atoms and/or nitrogen atoms, and has a composition and properties intermediate between an amorphous silicon photosensitive layer and a diamond-like carbon film. Optical breadth gap of the interlayer that bends
(Eg) is preferably 2.0 to 3.0 eV, and the film thickness is preferably 0.03 to 0.5 μm.

これらのアモルファスシリコン感光層、キャリヤ注入防
止層及び中間層は、プラズマCVD法。
These amorphous silicon photosensitive layer, carrier injection prevention layer and intermediate layer are formed using plasma CVD method.

光cVD法、スi?ツタリング法、イオンプレーテイン
ク法など常法に従って形成できる。
Optical CVD method, Sui? It can be formed according to conventional methods such as the tuttering method and the ion plate ink method.

更に、ダイヤモンド状炭素膜は別名i・カーがンとも呼
ばれ、その電気的2機械的、光学的及び化学的性質が通
常の炭素膜とは異なりダイヤモンドに近いものである。
Furthermore, the diamond-like carbon film is also called i-carbon film, and its electrical, mechanical, optical, and chemical properties are different from ordinary carbon films and are close to diamond.

即ち、固有抵抗が1080儂以上、光学的バンドギャッ
プが2 eV以上、及びビッカース硬度が1500以上
である。かかるダイヤモンド状炭素膜は、プラズマCV
D法、スノにツタリンク法、イオンビームデポジション
法、レーザー蒸着法により形成できる。
That is, the resistivity is 1080 degrees or more, the optical band gap is 2 eV or more, and the Vickers hardness is 1500 or more. Such a diamond-like carbon film can be formed by plasma CV
It can be formed by the D method, the Suno-ni-Tuta-link method, the ion beam deposition method, or the laser evaporation method.

〔作 用〕 本発明の感光体においては、アモルファスシリコン感光
層とダイヤモンド状炭素膜との間に、これら両層の中間
的な組成及び性質を有する中間層が介在しているので、
従来隣接していたアモルファスシリコン感光層とダイヤ
モンド状炭素膜の間の歪を吸収し、これらの各層間の界
面欠陥準位が少なくなる。その結果、帯電及び露光工程
において生じるキャリヤーが界面欠陥準位でトラップさ
れることがなくなり、長期間使用しても光感度、受容電
位、暗減衰、残留電位などの電気的特性が劣化すること
がない。この作用は感光体の単位膜厚当りの受容電位(
受容電位/導電性基体表面から感光層までの厚さ)が正
帯電40v/μm以上であるとき特に顕著である。
[Function] In the photoreceptor of the present invention, an intermediate layer having a composition and properties intermediate between these two layers is interposed between the amorphous silicon photosensitive layer and the diamond-like carbon film.
The strain between the conventionally adjacent amorphous silicon photosensitive layer and diamond-like carbon film is absorbed, and the interface defect levels between these layers are reduced. As a result, carriers generated during the charging and exposure processes are no longer trapped in interfacial defect levels, and electrical properties such as photosensitivity, acceptance potential, dark decay, and residual potential do not deteriorate even after long-term use. do not have. This action is due to the acceptance potential per unit film thickness of the photoreceptor (
This is particularly noticeable when the acceptance potential/thickness from the surface of the conductive substrate to the photosensitive layer is positively charged at 40 V/μm or more.

かかる作用を果たす中間層の光学的パンドギャツf (
Eg)は2.0〜3.Oe Vが好ましく、2.0eV
未満では長波長光の吸収が多くなるため感度が低下し、
3.0eVを超えると歪を十分に吸収することが困難に
なるからである。また、中間層の膜厚は0.03〜0.
5μmであることが好ましく、膜厚か0.03μm未満
では歪の吸・収が十分ではなく、0.5μmを超えると
残留電位が大きくなり不都合である。
The optical breadth f (
Eg) is 2.0-3. Oe V is preferred, 2.0eV
If the value is less than
This is because if it exceeds 3.0 eV, it becomes difficult to absorb strain sufficiently. Moreover, the film thickness of the intermediate layer is 0.03 to 0.0.
The thickness is preferably 5 μm; if the film thickness is less than 0.03 μm, strain absorption will not be sufficient, and if it exceeds 0.5 μm, the residual potential will become large, which is disadvantageous.

また、最外層であるダイヤモンド状炭素膜は保護層であ
るから、0.05〜1.0μmの膜厚があれば十分であ
り、0.05μm未満では機械的強度が十分ではな(,
1,0μmを超えると入射光の吸収が大きくなり感度の
低下を招(。
In addition, since the outermost diamond-like carbon film is a protective layer, a film thickness of 0.05 to 1.0 μm is sufficient; if it is less than 0.05 μm, the mechanical strength may not be sufficient (,
If it exceeds 1.0 μm, the absorption of incident light increases, resulting in a decrease in sensitivity ().

〔実施例〕〔Example〕

本発明の電子写真感光体の一具体例を以下に説明する。 A specific example of the electrophotographic photoreceptor of the present invention will be described below.

図面に示す構成の感光体を、アルミニウムの導電性基体
1上に各層をプラズマCVD法により連続的に形成して
製造した。即ち、キャリヤ注入防止層2としてSiH4
(100secm)とNH3(200secm )を圧
力Q、2Torr及びRF電力100Wでグロー放電分
解するプラズマCVD法により膜厚0.15μmのa−
8iNHを形成し、その上にSiH4(150secm
)を圧力Q、15Torr及びRF電力200Wでグロ
ー放電分解スるプラズマCVD法により膜厚15μmの
a −8i悪感光3を形成した。更に、a−8t悪感光
3上にSiH4(100scem)とC2H4(100
secm )を圧力0.2Torr及びRF電力100
Wでグロー放電分解するプラズマCVD法により膜厚0
.2μmで光学的バンドギャップが2.5eVのa−8
i−C中間層4を形成した。最後に、ダイヤモンド状炭
素膜5をCH4(20secm)を圧力0.I Tor
r及びRF’電力500Wでグロー放電分解するプラズ
マCVD法により膜厚0.2μmに形成した。尚、各層
の形成において、基板温度は220℃とし、RF周波数
は13.56 MHzとした。
A photoreceptor having the structure shown in the drawings was manufactured by sequentially forming each layer on an aluminum conductive substrate 1 by plasma CVD. That is, SiH4 is used as the carrier injection prevention layer 2.
A-
8iNH was formed, and SiH4 (150sec
) was subjected to glow discharge decomposition at a pressure Q of 15 Torr and an RF power of 200 W to form an a-8i photosensitive film 3 having a film thickness of 15 μm. Furthermore, SiH4 (100 scem) and C2H4 (100 scem) were
secm) at a pressure of 0.2 Torr and an RF power of 100
The film thickness is 0 by the plasma CVD method using glow discharge decomposition with W.
.. a-8 with an optical bandgap of 2.5 eV at 2 μm
An i-C intermediate layer 4 was formed. Finally, the diamond-like carbon film 5 was coated with CH4 (20 sec) at a pressure of 0. I Tor
The film was formed to a thickness of 0.2 μm using a plasma CVD method in which glow discharge decomposition was performed using r and RF' power of 500 W. In the formation of each layer, the substrate temperature was 220° C. and the RF frequency was 13.56 MHz.

得られた本発明の感光体と、中間層4を有しない従来の
感光体を用いて、複写耐久試験を実施した結果、従来の
感光体は50万回の複写で画像のコントラストが悪化し
鮮明度も低下したが、本発明の感光体では100万回の
複写の後でも鮮明な画像が得られ、まだ複写が可能であ
った。
A copying durability test was conducted using the obtained photoconductor of the present invention and a conventional photoconductor that does not have the intermediate layer 4. As a result, the contrast of the conventional photoconductor deteriorated and the image became clear after 500,000 copies. Although the photoreceptor of the present invention still produced clear images even after 1 million copies, copying was still possible.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、アモルファスシリコン感光層とダイヤ
モンド状炭素膜との間に、これら両層の中間的な組成及
び性質を有する中間層を介在させることによって両層間
の歪を吸収して界面欠陥準位を少な(することができ、
帯電及び露光工程において生じるキャリヤーか界面欠陥
準位でトラップされることがな(なるので、電気的特性
が劣化せず、長期間安定して使用できる信頼性の優れた
電子写真感光体を提供することができる。
According to the present invention, an intermediate layer having a composition and properties intermediate between these two layers is interposed between the amorphous silicon photosensitive layer and the diamond-like carbon film, thereby absorbing strain between the two layers and reducing interface defects. (can be,
Carriers generated during the charging and exposure processes are not trapped in interfacial defect levels (therefore, the electrical characteristics do not deteriorate and an excellently reliable electrophotographic photoreceptor that can be used stably for a long period of time is provided. be able to.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の電子写真感光体の一具体例の概略断面図
である。 1・・・導電性基体 2・・・キャリヤ注入防止層3・
・・感光層 4・・・中間層 5・・・ダイヤモンド状
炭素膜
The drawing is a schematic cross-sectional view of a specific example of the electrophotographic photoreceptor of the present invention. 1... Conductive substrate 2... Carrier injection prevention layer 3.
...Photosensitive layer 4...Intermediate layer 5...Diamond-like carbon film

Claims (3)

【特許請求の範囲】[Claims] (1)導電性基体上に形成したアモルファスシリコンの
感光層と、該感光層上に形成したケイ素原子と炭素原子
及び/又は窒素原子とからなるアモルファスの中間層と
、該中間層上に形成したダイヤモンド状炭素膜とを有す
ることを特徴とする電子写真感光体。
(1) A photosensitive layer of amorphous silicon formed on a conductive substrate, an amorphous intermediate layer formed on the photosensitive layer consisting of silicon atoms and carbon atoms and/or nitrogen atoms, and an amorphous intermediate layer formed on the intermediate layer. An electrophotographic photoreceptor comprising a diamond-like carbon film.
(2)上記中間層の光学的バンドギャップ(Eg)が2
.0〜3.0eVであることを特徴とする、特許請求の
範囲(1)項に記載の電子写真感光体。
(2) The optical bandgap (Eg) of the intermediate layer is 2
.. The electrophotographic photoreceptor according to claim (1), which has a voltage of 0 to 3.0 eV.
(3)上記中間層の膜厚が0.03〜0.5μmである
ことを特徴とする、特許請求の範囲(1)項又は(2)
項に記載の電子写真感光体。
(3) Claim (1) or (2) characterized in that the thickness of the intermediate layer is 0.03 to 0.5 μm.
The electrophotographic photoreceptor described in .
JP29121586A 1986-12-05 1986-12-05 Electrophotographic sensitive body Pending JPS63143559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29121586A JPS63143559A (en) 1986-12-05 1986-12-05 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29121586A JPS63143559A (en) 1986-12-05 1986-12-05 Electrophotographic sensitive body

Publications (1)

Publication Number Publication Date
JPS63143559A true JPS63143559A (en) 1988-06-15

Family

ID=17765955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29121586A Pending JPS63143559A (en) 1986-12-05 1986-12-05 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS63143559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010049242A (en) * 2008-07-25 2010-03-04 Canon Inc Electrophotographic photoreceptor and electrophotographic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010049242A (en) * 2008-07-25 2010-03-04 Canon Inc Electrophotographic photoreceptor and electrophotographic equipment

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