JPS63142844U - - Google Patents

Info

Publication number

JPS63142844U

JPS63142844U JP3650387U JP3650387U JPS63142844U JP S63142844 U JPS63142844 U JP S63142844U JP 3650387 U JP3650387 U JP 3650387U JP 3650387 U JP3650387 U JP 3650387U JP S63142844 U JPS63142844 U JP S63142844U

Authority

JP

Japan

Prior art keywords

interlayer insulating

insulating film

integrated circuit

semiconductor integrated

circuit device

Prior art date

1987-03-12

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 239000011229 interlayer Substances 0.000 claims description 7
• 239000010410 layer Substances 0.000 claims description 5
• 239000004065 semiconductor Substances 0.000 claims description 4
• 229910052581 Si3N4 Inorganic materials 0.000 claims 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
• 230000002411 adverse Effects 0.000 claims 1
• 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
• 229910052814 silicon oxide Inorganic materials 0.000 claims 1
• 238000010586 diagram Methods 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1