JPS63140530A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPS63140530A JPS63140530A JP61180207A JP18020786A JPS63140530A JP S63140530 A JPS63140530 A JP S63140530A JP 61180207 A JP61180207 A JP 61180207A JP 18020786 A JP18020786 A JP 18020786A JP S63140530 A JPS63140530 A JP S63140530A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- membrane
- ring
- absorber
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006096 absorbing agent Substances 0.000 claims abstract description 27
- 239000012528 membrane Substances 0.000 claims abstract description 21
- 238000007747 plating Methods 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 238000000992 sputter etching Methods 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造において使用するのに適する
Ｘ線マスクに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray mask suitable for use in the manufacture of semiconductor devices.
Ｘ線マスクは、リングで周辺を支持されたＸ線透過性メ
ンブレンに、Ｘ線吸収体パターンを設けて形成する。従
来は、第２図に示すように、Ｘ線透過性メンブレンの片
側の面にのみＸ線吸収体パターンを設けていた。このメ
ンブレンは厚み約４μｍの窒化けい素、水素化：窒化は
う素または水素化：窒化炭化はう素の薄膜であり、この
上にＸ線吸収体として高さ約１μｍ、幅約０．５μｍの
金、またはタンタル、もしくはタングステンのパターン
を形成する。Ｘ線透過性メンブレンは薄いので、Ｘ線吸
収体の内部応力によって、第２図に示すように、高さの
方向（ｈ）および幅の方向（Ｗ）に変形し、これによっ
てパターンに歪みを生ずる欠点があった。An X-ray mask is formed by providing an X-ray absorber pattern on an X-ray transparent membrane whose periphery is supported by a ring. Conventionally, as shown in FIG. 2, an X-ray absorber pattern was provided only on one side of an X-ray transparent membrane. This membrane is a thin film of silicon nitride, hydrogenated: boron nitride, or hydrogenated: boron nitride carbide, with a thickness of about 4 μm, and on top of this is a thin film of about 1 μm in height and about 0.5 μm in width as an X-ray absorber. pattern of gold, tantalum, or tungsten. Since the X-ray transparent membrane is thin, the internal stress of the X-ray absorber causes it to deform in the height direction (h) and width direction (W), as shown in Figure 2, thereby distorting the pattern. There were some drawbacks.
吸収体の内部応力によるＸ線透過性メンブレンの変形を
なくして、パターンの歪みを軽減することが問題である
。The problem is to reduce distortion of the pattern by eliminating deformation of the X-ray transparent membrane due to internal stress of the absorber.
上記問題点は、Ｘ線透過性メンブレンの両側の面に同一
パターンのＸ線吸収体を設けたことを特徴とするＸ線マ
スクによって達成することができる。The above problem can be solved by an X-ray mask characterized by having X-ray absorbers of the same pattern provided on both sides of an X-ray transparent membrane.
叉応■土
（イ）シリコン基板１の１つの面の周辺部にアルミナリ
ング２を接着した後に、基板１の反対側の面に、水素化
：窒化炭化はう素をプラズマ化学気相成長（ＰＣＶＤ）
させて、厚み４μｍのＸ線透過性メンブレン３を成膜し
た。リング２の下の部分を除くシリコンを、ぶつ酸、硝
酸、酢酸の混酸によってエツチングし、リング２によっ
て囲まれた領域のメンブレン３を露出させた。After adhering the alumina ring 2 to the periphery of one surface of the silicon substrate 1, hydrogenated boron nitride carbide is deposited on the opposite surface of the substrate 1 by plasma chemical vapor deposition ( PCVD)
In this way, an X-ray transparent membrane 3 having a thickness of 4 μm was formed. The silicon except for the lower part of the ring 2 was etched with a mixed acid of oxic acid, nitric acid, and acetic acid to expose the membrane 3 in the area surrounded by the ring 2.
上にレジスト５を成膜して多層レジストとした（第１図
ａ）。A resist 5 was formed on top to form a multilayer resist (FIG. 1a).
（ハ）電子線露光によって、レジスト５をパターニング
して、めっきステンシル５′を形成した（第１図ｂ）。(c) The resist 5 was patterned by electron beam exposure to form a plating stencil 5' (FIG. 1b).
（ニ）めっきステンシル５′をマスクとして、めっきベ
ース４の上に金をめっきして、第１のＸ線吸収体６のパ
ターンを形成したく第１図Ｃ）。(d) Using the plating stencil 5' as a mask, gold is plated on the plating base 4 to form a pattern of the first X-ray absorber 6 (FIG. 1C).
（ホ）酸素プラズマエツチングによってめっきステンシ
ル５′を除去し、さらにアルゴンイオンミリングによっ
て、めっきベース４も除去して第１のＸ線吸収体６を残
して、第２のＸ線吸収体形成のためのＸ線マスクとした
。(E) The plating stencil 5' is removed by oxygen plasma etching, and the plating base 4 is also removed by argon ion milling, leaving the first X-ray absorber 6, which is then used to form the second X-ray absorber. It was used as an X-ray mask.
（へ）次にリング２を有する側のメンブレン３の面に、
さきの工程（ロ）と同様にして、めっきベース７および
ネガ型レジスト８を成膜した（第１図ｅ）。(to) Next, on the surface of the membrane 3 on the side that has the ring 2,
A plating base 7 and a negative resist 8 were formed in the same manner as in the previous step (b) (FIG. 1e).
（ト）工程（ホ）で形成した第１のＸ線吸収体をマスク
として、リング２を有しない側からＸ線を照射して、メ
ンブレン３を透して、ネガ型レジスト８をパターニング
し、これをめっきステンシル８′とした（第１図ｆ）。(g) Using the first X-ray absorber formed in step (e) as a mask, irradiate X-rays from the side not having the ring 2 to pass through the membrane 3 and pattern the negative resist 8; This was used as a plating stencil 8' (FIG. 1f).
（チ）このめっきステンシル８′をマスクとして、金を
めっきし、第２の金めつき吸収体９を形成した（第１図
ｇ）。(H) Using this plating stencil 8' as a mask, gold plating was performed to form a second gold-plated absorber 9 (FIG. 1g).
（ワ）めっきステンシル８′は酸素プラズマエツチング
して除去し、めっきベース７をアルゴンイオンミリング
して、第２のＸ線吸収体９を残した。(iv) The plating stencil 8' was removed by oxygen plasma etching, and the plating base 7 was milled with argon ions, leaving the second X-ray absorber 9.
このパターンはメンブレン３の反対側にある第１のＸ線
吸収体６と同一のパターンを有する（第１図ｈ）。This pattern has the same pattern as the first X-ray absorber 6 on the opposite side of the membrane 3 (FIG. 1h).
この実施例では金めつきによって吸収体パターンを形成
したが、タンタルまたはタングステンをスパッタリング
して吸収体パターンを形成する場合は、さきに形成した
第１の吸収体とは反対側のメンブレン面にポジ型レジス
トを塗布して、第１の吸収体の側からＸ線を照射して、
ホトレジストをパターニングし、反応性イオンエツチン
グによって、タンタルまたはタングステンを選択除去し
て吸収体パターンを形成することができる。In this example, the absorber pattern was formed by gold plating, but when sputtering tantalum or tungsten to form the absorber pattern, a positive layer is placed on the membrane surface opposite to the previously formed first absorber. Applying a mold resist and irradiating X-rays from the first absorber side,
The absorber pattern can be formed by patterning the photoresist and selectively removing tantalum or tungsten by reactive ion etching.
本発明のＸ線マスクは、吸収体の内部応力によるＸ線透
過性メンブレンの歪みが少なく、がっ、マスクのコント
ラストを向上させることができる。The X-ray mask of the present invention has less distortion of the X-ray transparent membrane due to the internal stress of the absorber, and can improve the contrast of the mask.
第１図は本発明のＸ線マスクを製造する１つの方法の工
程図であり、
第２図は従来技術のＸ線マスクの歪みを示す断面である
。
３・・・メンブレン、 ４，７・・・めっきベー
ス、５’、８’・・・めっきステンシル、
６．９・・・めっきしたＸ線吸収体。FIG. 1 is a process diagram of one method for manufacturing an X-ray mask of the present invention, and FIG. 2 is a cross-section showing distortion of a prior art X-ray mask. 3... Membrane, 4,7... Plated base, 5', 8'... Plated stencil, 6.9... Plated X-ray absorber.
Claims (1)
Ｘ線吸収体を設けたことを特徴とするＸ線マスク。1. An X-ray mask characterized in that X-ray absorbers with the same pattern are provided on both sides of an X-ray transparent membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61180207A JPS63140530A (en) | 1986-08-01 | 1986-08-01 | X-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61180207A JPS63140530A (en) | 1986-08-01 | 1986-08-01 | X-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63140530A true JPS63140530A (en) | 1988-06-13 |
Family
ID=16079272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61180207A Pending JPS63140530A (en) | 1986-08-01 | 1986-08-01 | X-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63140530A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019015967A (en) * | 2017-07-05 | 2019-01-31 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Metrology system having euv optical unit |
-
1986
- 1986-08-01 JP JP61180207A patent/JPS63140530A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019015967A (en) * | 2017-07-05 | 2019-01-31 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Metrology system having euv optical unit |
| US10948637B2 (en) | 2017-07-05 | 2021-03-16 | Carl Zeiss Smt Gmbh | Metrology system having an EUV optical unit |
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