JPS63139072A - Method of joining ceramic substrate and member - Google Patents
Method of joining ceramic substrate and memberInfo
- Publication number
- JPS63139072A JPS63139072A JP28719886A JP28719886A JPS63139072A JP S63139072 A JPS63139072 A JP S63139072A JP 28719886 A JP28719886 A JP 28719886A JP 28719886 A JP28719886 A JP 28719886A JP S63139072 A JPS63139072 A JP S63139072A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- phosphorus
- joined
- ceramic substrate
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 19
- 238000005304 joining Methods 0.000 title claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 35
- 239000011574 phosphorus Substances 0.000 claims description 34
- 239000002131 composite material Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 230000005496 eutectics Effects 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- -1 Altos Chemical class 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 101100052669 Schizosaccharomyces pombe (strain 972 / ATCC 24843) N118 gene Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はセラミックス基体と金属、セラミックス等の被
接合部材との接合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of joining a ceramic substrate and a member to be joined such as metal or ceramic.
近年電子工業の発達に伴ない、電子回路基板等にセラミ
ックス基体と金属部材との接合体が注目されている。従
来からセラミックス基体と金属部材との接合方法には多
くの方法が提案されており、一般的には接着剤を用いた
り、加熱、加圧等により接合する方法が行なわれている
。BACKGROUND ART In recent years, with the development of the electronic industry, joined bodies of ceramic substrates and metal members have been attracting attention for electronic circuit boards and the like. Conventionally, many methods have been proposed for joining a ceramic substrate and a metal member, and generally methods of joining using adhesives, heating, pressure, etc. are used.
これらの方法は基本的にはセラミックスに金属が濡れる
ことが前提であり、比較的金属酸化物と濡れやすい酸化
物系セラミックス例えばＡｌｔｏｓ、ＭｇＯ１Ｓｉ Ｏ
ｓ等に関しては、多数の研究報告や実例が示されている
。例えば特公昭６０−４１５１１号発明においては、銅
部材の表面に亜酸化銅を形成し、これをセラミックスに
重ねて、銅の融点と亜酸化銅の融点との間、即ち１０８
５〜１０６５℃の温度範囲内で、不活性ガス雰囲気中で
加熱する方法、即ちダイレクトボンド法が提案されてい
る。These methods basically assume that the metal gets wet with the ceramic, and oxide ceramics that are relatively easy to get wet with metal oxides, such as Altos, MgO1SiO
Regarding s, etc., numerous research reports and examples have been presented. For example, in the invention of Japanese Patent Publication No. 60-41511, cuprous oxide is formed on the surface of a copper member, and this is superimposed on ceramics, so that the temperature is between the melting point of copper and the melting point of cuprous oxide, that is, 108
A method of heating in an inert gas atmosphere within a temperature range of 5 to 1065°C, ie, a direct bonding method, has been proposed.
しかし上記ダイレクトボンド法は、比較的高い接合強度
を得ることが出来るものの、加熱温度が１０８５〜１０
６５℃とわずか１８℃の範囲しかなく、温度コントロー
ルが非常に困難であるという問題点を有している。However, although the above-mentioned direct bonding method can obtain relatively high bonding strength, the heating temperature is 1085 to 10
The problem is that the temperature range is only 65°C and 18°C, making it extremely difficult to control the temperature.
そこで前記温度コントロールが比較的容易な方法として
、（１）Ａｆｆｉ、Ａｌ４−３ｉ合金、ｋｇ−Ｃｕ合金
等をロー材として用いて、ロー材する方法、（２） Ｍ
ｏ等の高融点金属を金属とセラミックスとの間にはさみ
、加熱する方法等も試みられている。しかしながら上記
方法の内、前者は、前記ロー材の融点が比較的低いため
耐熱性が要求される接合体には使用出来ず、又後者は耐
熱性が良好な接合体を得ることが出来るものの、高い接
合強度を得るためには加圧が必要である等の欠点を有し
ている。Therefore, as a method in which the temperature control is relatively easy, (1) a method of brazing using Affi, Al4-3i alloy, kg-Cu alloy, etc. as a brazing material, (2) a method of brazing using M
A method of sandwiching a high melting point metal such as metal between metal and ceramics and heating the same has also been attempted. However, among the above methods, the former cannot be used for a joined body that requires heat resistance because the melting point of the brazing material is relatively low, and the latter method can produce a joined body with good heat resistance. It has drawbacks such as the need for pressurization in order to obtain high bonding strength.
本発明は上記の点に鑑みなされたものであり、その目的
とするところは、金属等の被接合部材を比較的広い範囲
の接合温度で、セラミックス基体に良好な接合強度をも
って接合させ得る方法を提供することである。The present invention has been made in view of the above points, and its purpose is to provide a method for bonding members such as metals to ceramic substrates with good bonding strength over a relatively wide range of bonding temperatures. It is to provide.
即ち本発明は、セラミックス基体と被接合部材との間に
リン量がαＬＸ−ＬＯＸｗｔ％である金属１．１ン複合
体（但しＸは共晶点におけるリン量）を介在させ、これ
らを不活性ガス雰囲気中で該金属−リン複合体の共晶温
度以上でかつ前記被接合部材の融点未満の温度範囲内で
加熱することを特徴とするセラミックス基体と被接合部
材との接合方法である。That is, the present invention interposes a 1.1-metal composite having a phosphorus content of αLX-LOXwt% between the ceramic substrate and the member to be joined (where X is the phosphorus content at the eutectic point), and inactivates the composite. This method of joining a ceramic substrate and a member to be joined is characterized in that heating is performed in a gas atmosphere within a temperature range that is higher than the eutectic temperature of the metal-phosphorous composite and lower than the melting point of the member to be joined.
本発明においては、セラミックス基体と被接合部材との
間にはさまれた金属−リン複合体が加熱時に溶融してセ
ラミックス基体を濡らすことによって、該セラミックス
基体との接合が行なわれるが、前記金属−リン複合体の
溶融温度範囲が比較的広いため、加熱時の温度コントロ
ールが比較的容易である。しかもリンは非常に活性であ
るため、前記金属−リン複合体はセラミックス並びに金
属、セラミックス等の被接合部材になじみやすく、これ
かために強固な接合強度を得ることが出来る。In the present invention, the metal-phosphorus composite sandwiched between the ceramic substrate and the member to be joined is melted during heating and wets the ceramic substrate, thereby joining the ceramic substrate. - Since the melting temperature range of the phosphorus composite is relatively wide, temperature control during heating is relatively easy. In addition, since phosphorus is very active, the metal-phosphorus composite is easily compatible with ceramics and members to be joined such as metals and ceramics, and therefore, strong joint strength can be obtained.
前記金属−リーン複合体における金属としては、第１表
に示したＡｇ、 Ｇｏ 、Ｏｒ 、 Ｃｕ ％Ｆｅ 、
Ｍｎ 、 Ｎｉ 、Ｐｄ。The metals in the metal-lean composite include Ag, Go, Or, Cu%Fe, as shown in Table 1.
Mn, Ni, Pd.
ｐｔ等のリンと共晶反応を起す金属を用いることが好ま
しく、これらの金属とリンとの複合体は加熱時に金属単
体の融点よりも低い温度（共晶温度）で一部溶融して液
相を生じる（第１表参照）。It is preferable to use a metal that causes a eutectic reaction with phosphorus, such as PT, and when heated, a composite of these metals and phosphorus partially melts at a temperature lower than the melting point of the metal alone (eutectic temperature), forming a liquid phase. (see Table 1).
第１表
即ちセラミックス基体と被接合部材との間に前記金属−
リン複合体を介在させた後、該金属−リン複合体の共晶
温度以上で、前記被接合部材の融点未満の温度範囲内で
加熱することにより、前記セラミックス基体と被接合部
材との接合体を得ることが出来る。本発明においては、
耐熱性が要求されない場合にはＣｕ−ｐｌｐｔ−Ｐ、Ｐ
ｄ−Ｐ等共品温度が低い金属−リン複合体を用いるとよ
く、また耐熱性が要求される場合にはＦｅ−Ｐ、Ｇｏ−
Ｐ。Table 1, that is, the metal between the ceramic base and the member to be joined.
After interposing a phosphorus composite, heating is performed within a temperature range that is higher than the eutectic temperature of the metal-phosphorus composite and lower than the melting point of the members to be joined, thereby producing a joined body of the ceramic base and the members to be joined. can be obtained. In the present invention,
If heat resistance is not required, Cu-plpt-P, P
It is best to use a metal-phosphorus composite with a low common temperature such as d-P, and if heat resistance is required, Fe-P, Go-
P.
０ｒ−Ｐ等共晶温度が高い金属−リン複合体を用いる等
接合体の用途に応じて前記金属−リン複合体を使い分け
ることも可能である。同上述の加熱における雰囲気とし
ては、Ｎｔ、Ａｒ等の不活性ガス雰囲気、或いは真空を
用いることが好ましいが、０２、Ｈｌ等の反応性ガスが
多少含まれていても差支えない。又接合時の加圧は基本
的には必要でないが、必要に応じて０１〜ＩＫｑ／−程
度の加圧を行なっても差し支えなく、この場合には更に
高い接合強度を得ることが出来る。It is also possible to use the metal-phosphorus composite properly depending on the application of the equiconjugate using a metal-phosphorus composite having a high eutectic temperature such as 0r-P. As the atmosphere for the above-mentioned heating, it is preferable to use an inert gas atmosphere such as Nt, Ar, etc., or vacuum, but there is no problem even if a reactive gas such as 02, Hl, etc. is contained to some extent. Although pressure during bonding is basically not necessary, pressure of about 01 to IKq/- may be applied if necessary, and in this case, even higher bonding strength can be obtained.
本発明において前記金属−リン複合体におけるリン量は
０．１ Ｘ〜１．０ Ｘ ｗｔチ（但しＸｌｌ′ｉ共品
点におけるリン量）の範囲内にする必要がある。その理
由はリン量が０． Ｉ Ｘ ｗｔ％未満であると、加熱
温度が低い場合は液相の生成する割合が少なく、又加熱
温度を高くすると液相中のＰ量が少なくなって接合強度
が低下するためである。又リン量がＬＯＸｗｔ％を超え
ると加熱後の冷却時に粗大で脆い金属−リン化合物が晶
出し接合強度が低下する。In the present invention, the amount of phosphorus in the metal-phosphorus composite must be within the range of 0.1 X to 1.0 X wt (however, the amount of phosphorus at the Xll'i common point). The reason is that the amount of phosphorus is 0. This is because if it is less than I x wt%, when the heating temperature is low, the proportion of liquid phase generated is small, and when the heating temperature is high, the amount of P in the liquid phase decreases, resulting in a decrease in bonding strength. Furthermore, if the amount of phosphorus exceeds LOXwt%, coarse and brittle metal-phosphorus compounds will crystallize during cooling after heating, resulting in a decrease in bonding strength.
本発明における金属−リン複合体の形態は特に限定され
るものではなく、例えば薄膜、粉末、板、箔等の形態を
とることが出来る。又前記複合体は金属とリンの合金で
あっても良いし、単に物理的に複合化していても差し支
えない。The form of the metal-phosphorus composite in the present invention is not particularly limited, and can take the form of a thin film, powder, plate, foil, etc., for example. Further, the composite may be an alloy of metal and phosphorus, or may simply be physically composited.
本発明における被接合部材は特に限定されるものではな
いが、第１表に示した金属−リン複合体における金属単
体、これらの金属を主成分とする合金、或いはこれらの
金属に固溶する金属等であれば特に良好な接合強度を得
ることが出来る。又前記被接合部材はセラミックスであ
っても差し支えない。同被接合部材或いはセラミックス
基体として用いられるセラミックスの種類は特に限定さ
れるものではなく、Ｍｈｏｓ、Ｓｉ０重等の酸化物系で
あっても或いは／ＩＮ％ ＳｉＣ等の非酸化物系であっ
ても差し支えない。The members to be joined in the present invention are not particularly limited, but include simple metals in the metal-phosphorus composite shown in Table 1, alloys containing these metals as main components, or metals dissolved in these metals. etc., particularly good bonding strength can be obtained. Further, the member to be joined may be made of ceramics. The type of ceramic used as the member to be joined or the ceramic substrate is not particularly limited, and may be an oxide type such as Mhos or Si0 heavy, or a non-oxide type such as /IN% SiC. No problem.
以下に実施例により本発明を更に具体的に説明する。 The present invention will be explained in more detail below with reference to Examples.
厚さ１１ＩＩｌ！のＡＬＯｓ又はＡＩＮセラミックス基
体と厚さ０．５ Ｉｌｌ＋の被接合部材との間に厚さ５
０μｍの金属−リン複合体の箔をはさみ、所定の温度で
Ｎｓガス雰囲気中で５分間加熱し、得られた接合体の接
合強度を引張試験により測定した。セラミックス基体、
被接合部材、金属−リン複合体の材質、加熱温度、並び
に得られた接合体の接合強度を第１表〜第５表にまとめ
て示す。Thickness 11IIl! A thickness of 5 mm between the ALOs or AIN ceramic substrate and the 0.5 Ill+ member to be joined
A 0 μm metal-phosphorus composite foil was sandwiched and heated at a predetermined temperature in an Ns gas atmosphere for 5 minutes, and the bonding strength of the resulting bonded body was measured by a tensile test. ceramic base,
Tables 1 to 5 summarize the materials to be joined, the materials of the metal-phosphorus composite, the heating temperature, and the joint strength of the obtained joined bodies.
第１表から明らかな様に、リン量が本発明の範囲内であ
る金属−リン複合体を間にはさんでセラミックス基体上
に銅部材を接合した本発明例Ｎα１〜ヰにおいては、前
記金属−リン複合体の共晶温度以上の広い範囲の接合温
度で良好な接合強度が得られている。一方前記金属一リ
ン複合体におけるリン量が本発明の範囲外である比較例
Ｎ［Ｌ ５．６においては接合強度が低下している。又
銅部材の表面を酸化させた後、セラミックス基体上に直
接前記銅部材を接合した従来例Ｎ［Ｌ ７においては、
１０７０℃に加熱した場合には良好な接合強度が得られ
ているが、１０６０℃以下の温度に加熱した場合は接合
が起っていない。As is clear from Table 1, in Examples Nα1 to Nα1 of the present invention in which a copper member was bonded to a ceramic substrate with a metal-phosphorus composite having a phosphorus content within the range of the present invention, the metal -Good bonding strength is obtained over a wide range of bonding temperatures above the eutectic temperature of the phosphorus composite. On the other hand, in Comparative Example N [L 5.6, in which the amount of phosphorus in the metal-phosphorus composite is outside the range of the present invention, the bonding strength is decreased. In addition, in conventional example N [L 7], the surface of the copper member was oxidized and then the copper member was directly bonded onto the ceramic substrate.
Good bonding strength was obtained when heated to 1070°C, but no bonding occurred when heated to a temperature of 1060°C or lower.
又、第２表、第５表から明らかな様に、セラミックス基
体上に鉄又は鉄合金或いはセラミックスを接合した本発
明例Ｎ１１８〜２０においても、前記金属−リン複合体
の共晶温度以上の広い範囲の接合温度で良好な接合強度
が得られている。Furthermore, as is clear from Tables 2 and 5, in Examples N118 to 20 of the present invention in which iron or iron alloys or ceramics were bonded to a ceramic substrate, the temperature range was wide above the eutectic temperature of the metal-phosphorus composite. Good bonding strength was obtained over a range of bonding temperatures.
本発明によれば、金属等の被接合部材を比較的広い範囲
の接合温度でセラミックス基体に良好な接合強度をもっ
て接合させることが出来、しかも加圧等を行、なわなく
ても耐熱性に優れた接合体が得られる等工業上顕著な効
果を奏するものである。According to the present invention, members to be joined such as metals can be joined to a ceramic substrate with good joining strength over a relatively wide range of joining temperatures, and have excellent heat resistance even without applying pressure or the like. This has significant industrial effects, such as the ability to obtain a bonded body with a high temperature.
Claims (3)
が０．１Ｘ〜１．０Ｘｗｔ％である金属−リン複合体（
但しＸは共晶点におけるリン量）を介在させ、これらを
不活性ガス雰囲気中で該金属−リン複合体の共晶温度以
上でかつ前記被接合部材の融点未満の温度範囲内で加熱
することを特徴とするセラミックス基体と被接合部材と
の接合方法。(1) A metal-phosphorus composite having a phosphorus content of 0.1X to 1.0Xwt% (
However, X is the amount of phosphorus at the eutectic point), and these are heated in an inert gas atmosphere to a temperature range that is higher than the eutectic temperature of the metal-phosphorus composite and lower than the melting point of the members to be joined. A method for joining a ceramic substrate and a member to be joined, characterized by:
ｒ、Ｃｕ、Ｆｅ、Ｍｎ、Ｎｉ、Ｐｄ、Ｐｔの群から選ば
れるいずれかの金属の単体又は合金であることを特徴と
する特許請求の範囲第１項記載のセラミックス基体と被
接合部材との接合方法。(2) The metals in the metal-phosphorus complex are Ag, Co, and C.
The ceramic substrate and the member to be joined according to claim 1, characterized in that the ceramic substrate is a single substance or an alloy of any metal selected from the group of Pt, Cu, Fe, Mn, Ni, Pd, and Pt. Joining method.
特徴とする特許請求の範囲第１項記載のセラミックス基
体と被接合部材との接合方法。(3) The method for joining a ceramic substrate and a member to be joined according to claim 1, wherein the member to be joined is a metal or a ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28719886A JPS63139072A (en) | 1986-12-02 | 1986-12-02 | Method of joining ceramic substrate and member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28719886A JPS63139072A (en) | 1986-12-02 | 1986-12-02 | Method of joining ceramic substrate and member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63139072A true JPS63139072A (en) | 1988-06-10 |
Family
ID=17714338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28719886A Pending JPS63139072A (en) | 1986-12-02 | 1986-12-02 | Method of joining ceramic substrate and member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63139072A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6607787B2 (en) | 2000-08-15 | 2003-08-19 | W. C. Heraeus Gmbh & Co. Kg | Process for producing a coating on a refractory structural member |
-
1986
- 1986-12-02 JP JP28719886A patent/JPS63139072A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6607787B2 (en) | 2000-08-15 | 2003-08-19 | W. C. Heraeus Gmbh & Co. Kg | Process for producing a coating on a refractory structural member |
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